university of tehran 1 interface design compute memory timing omid fatemi ([email protected])

54
University of Tehran 1 Interface Design Compute Memory Timing Omid Fatemi ([email protected])

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University of Tehran 1

Interface DesignCompute

Memory Timing

Omid Fatemi

([email protected])

University of Tehran 2

Outline

• Connecting to micro-processor

• Timing of microprocessor

• Timing of memory

• Interfacing memory

University of Tehran 3

Typical Interface Design

Connect Compute Convey Cooperate

Sense RealityTouch RealityConnectTransform

Embedded SystemsMicrosAssembler, CReal-TimeMemoryPeripheralsTimersDMA

PC interfacesHCI

BussesProtocolsStandardsPCIIEEE488SCSIUSB & FireWireCAN

University of Tehran 4

Processor Timing Diagramfor any memory read machine cycle

IOR

IOW

MEMR

MEMW

___

____

_____

______

AddressBus

Data Bus

T1 T2 T3

CLOCK

memory address

datain

University of Tehran 5

Processor Timing Diagramfor any memory write machine cycle

IOR

IOW

MEMR

MEMW

___

____

_____

______

AddressBus

Data Bus

T1 T2 T3

CLOCK

memory address

data out

University of Tehran 6

When interfacing memory chips to a microprocessor, consider the following:

• TAVDV – address access time

• TRLDV – read access time

• TDVWH – memory setup time

• TWHDX – data hold time

• TWLWH – write pulse width

Refer to 8088 data manual

University of Tehran 7

Address Access Time (TAVDV)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

____

RD

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

D7 - D0from memory to 74LS245

D7 - D0 (from memory)

A7 - A0 D7 - D0 from74LS245

garbage

TAVDV

3TCLCL

TCLAV

TDVCL

University of Tehran 8

Timing Requirements during Memory Read

• TAVDV– 3TCLCL – TCLAV – TDVCL

– Address Access Time

– from Address is Valid to Data is Valid

University of Tehran 9

Read Access Time (TRLDV)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

____

RD

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

D7 - D0from memory to 74LS245

D7 - D0 (from memory)

A7 - A0 D7 - D0 from74LS245

garbage

TRLDV

2TCLCL

TDVCLTCLRL

University of Tehran 10

Timing Requirements during Memory Read

• TRLDV– 2TCLCL – TCLRL – TDVCL

– Read Access Time

– from Read Signal is Low to Data is Valid

University of Tehran 11

Memory Setup Time (TDVWH)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

A7 - A0 D7 - D0 (to 74LS245)

D7 - D0from 74LS245 to memory

D7 - D0 (to memory)A7 - A0

2TCLCL

TDVWH

TCLDV TCVCTX

University of Tehran 12

Timing Requirements during Memory Write

• TDVWH– 2TCLCL – TCLDV +TCVCTX

– Memory Setup Time

– from Data is Valid to Write Signal is High

University of Tehran 13Data Hold Time (TWHDX)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

A7 - A0 D7 - D0 (to 74LS245)

D7 - D0from 74LS245 to memory

D7 - D0 (to memory)A7 - A0

TWHDX

TCLCH

University of Tehran 14

Timing Requirements during Memory Write

• TWHDX– TCLCH – X

– Data Hold Time (after WR’)

– from Write Signal is High to Data is Invalid (Inactive)

University of Tehran 15

Write Pulse Width / Write-Time (TWLWH)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

A7 - A0 D7 - D0 (to 74LS245)

D7 - D0from 74LS245 to memory

D7 - D0 (to memory)A7 - A0

TWLWH

2TCLCL

University of Tehran 16

Timing Requirements during Memory Write

• TWLWH– 2TCLCL – Y

– Write Pulse Width / Write-Time

– from Write Signal is Low to Write Signal is High

University of Tehran 17

8088 MINIMUM COMPLEXITY SYSTEM TIMING REQUIREMENTS

8088 8088-2 Symbol Parameter Min Max Min Max

Units

TCLCL CLK Cycle Period 200 500 125 500 ns

TCLCH CLK Low Time 118 68 ns

TDVCL Data Setup Time 30 20 ns

TCLAV Address Valid Delay 10 110 10 60 ns

TCLRL RD’ Active Delay 10 165 10 100 ns

TCLDV Data Valid Delay 10 110 10 60 ns

TCVCTX Control Inactive Delay 10 110 10 70 ns

TWHDX Data Hold Time after WR’ TCLCH – 30 TCLCH – 30 ns

TWLWH WR’ Width 2TCLCL – 60 2TCLCL – 40 ns

University of Tehran 18

Computation of Timing Requirements for 8088 using a 4Mhz Clock

• TAVDV 3TCLCL – TCLAVmax – TDVCLmin

3(250 ns) – 110 ns – 30 ns 610 ns

• TRLDV 2TCLCL – TCLRLmax – TDVCLmin

3(250 ns) – 165 ns – 30 ns 555 ns

University of Tehran 19

8088 MINIMUM COMPLEXITY SYSTEM TIMING REQUIREMENTS

8088 8088-2 Symbol Parameter Min Max Min Max

Units

TCLCL CLK Cycle Period 200 500 125 500 ns

TCLCH CLK Low Time 118 68 ns

TDVCL Data Setup Time 30 20 ns

TCLAV Address Valid Delay 10 110 10 60 ns

TCLRL RD’ Active Delay 10 165 10 100 ns

TCLDV Data Valid Delay 10 110 10 60 ns

TCVCTX Control Inactive Delay 10 110 10 70 ns

TWHDX Data Hold Time after WR’ TCLCH – 30 TCLCH – 30 ns

TWLWH WR’ Width 2TCLCL – 60 2TCLCL – 40 ns

University of Tehran 20

Computation of Timing Requirements for 8088 using a 4Mhz Clock

• TDVWH 2TCLCL – TCLDVmax +TCVCTXmin

2(250 ns) – 110 ns + 10 ns 400 ns

• TWHDX TCLCH – X 118 ns – 30 ns 88 ns

• TWLWH 2TCLCL – Y 2(250 ns) – 60 ns 440 ns

University of Tehran 21

Timing Requirements for 8088 using a 4Mhz Clock

• TAVDV = 610 ns

• TRLDV = 555 ns

• TDVWH = 400 ns

• TWHDX = 88 ns

• TWLWH = 440 ns

University of Tehran 22

Can we interface a 6264 to the 8088 chip which uses a 4MHz clock?

University of Tehran 23

Timing Requirements for 6264 SRAM

• TAVDV = ?

• TRLDV = ?

• TDVWH = ?

• TWHDX = ?

• TWLWH = ?

University of Tehran 24

HM6264B Series Read TIMING REQUIREMENTS

HM6264B-8L HM6264B-10L Symbol Parameter Min Max Min Max

Units

tRC Read cycle time 85 100 ns

tAA Address access time 85 100 ns

tCO1 Chip select access time (CS1’) 85 100 ns

tCO2 Chip select access time (CS2’) 85 100 ns

tOE Output enable to output valid 45 50 ns

tLZ1 Chip selection to output in low-Z

(CS1) 10 10 ns

tLZ2 Chip selection to output in low-Z

(CS2) 10 10 ns

tOLZ Output enable to output in low-Z 5 5 ns

tHZ1 Chip deselection in to output i n high- Z (CS1’)

0 30 0 35 ns

tHZ2 Chip deselection in to output in high- Z (CS2’)

0 30 0 35 ns

tOHZ Output disable to output in high-Z 0 30 0 35 ns

tOH Output hold from address change 10 10 ns

University of Tehran 25

HM6264B Series Write TIMING REQUIREMENTS

HM6264B-8L HM6264B-10L Symbol Parameter Min Max Min Max

Units

tWC Write cycle time 85 100 ns

tCW Chip selection to end of write 75 80 ns

tAS Address setup time 0 0 ns

tAW Address valid to end of write 75 80 ns

tWP Write pulse width 55 60 ns

tWR Write recovery time 0 0

tWHZ WE’ to output in high-Z 0 30 0 35 ns

tDW Data to write time overlap 40 40 ns

tDH Data hold from write time 0 0 ns

tOW Output active from end of write 5 5 ns

tOHZ Output disable to output in high-Z 0 30 0 35 ns

University of Tehran 26

HM6264B Series Read Timing Diagram

University of Tehran 27

HM6264B Series Write Timing Diagram

University of Tehran 28

Timing Requirements for 6264 SRAM

• TAVDV = tAA

• TRLDV = tOE

• TDVWH = tDW

• TWHDX = tDH

• TWLWH = tWP

University of Tehran 29

Timing Requirements for HM6264B-8L

• TAVDV = tAA = ?

• TRLDV = tOE = ?

• TDVWH = tDW = ?

• TWHDX = tDH = ?

• TWLWH = tWP = ?

University of Tehran 30

HM6264B Series Read TIMING REQUIREMENTS

HM6264B-8L HM6264B-10L Symbol Parameter Min Max Min Max

Units

tRC Read cycle time 85 100 ns

tAA Address access time 85 100 ns

tCO1 Chip select access time (CS1’) 85 100 ns

tCO2 Chip select access time (CS2’) 85 100 ns

tOE Output enable to output valid 45 50 ns

tLZ1 Chip selection to output in low-Z (CS1)

10 10 ns

tLZ2 Chip selection to output in low-Z (CS2)

10 10 ns

tOLZ Output enable to output in low-Z 5 5 ns

tHZ1 Chip deselection in to output in high-Z (CS1’)

0 30 0 35 ns

tHZ2 Chip deselection in to output in high-Z (CS2’)

0 30 0 35 ns

tOHZ Output disable to output in high-Z 0 30 0 35 ns

tOH Output hold from address change 10 10 ns

University of Tehran 31

HM6264B Series Write TIMING REQUIREMENTS

HM6264B-8L HM6264B-10L Symbol Parameter Min Max Min Max

Units

tWC Write cycle time 85 100 ns

tCW Chip selection to end of write 75 80 ns

tAS Address setup time 0 0 ns

tAW Address valid to end of write 75 80 ns

tWP Write pulse width 55 60 ns

tWR Write recovery time 0 0

tWHZ WE’ to output in high-Z 0 30 0 35 ns

tDW Data to write time overlap 40 40 ns

tDH Data hold from write time 0 0 ns

tOW Output active from end of write 5 5 ns

tOHZ Output disable to output in high-Z 0 30 0 35 ns

University of Tehran 32

Timing Requirements for HM6264B-8L

• TAVDV = tAA = 85 ns

• TRLDV = tOE = 45 ns

• TDVWH = tDW = 40 ns

• TWHDX = tDH = 0 ns

• TWLWH = tWP = 55 ns

University of Tehran 33

Comparing Timing Requirements of 8088 (using 4 Mhz clock) and HM6264B-8L

8088 using 4MHz clk Timing Req. HM6264B-8L 610 ns TAVDV or tAA 85 ns

555 ns TRLDV or tOE 45 ns 400 ns TDVWH or tDW 40 ns

88 ns TWHDX or tDH 0 ns

440 ns TWLWH or tWP 55 ns

University of Tehran 34

Can we interface a 2764 to the 8088 chip which uses a 4MHz clock?

University of Tehran 35

Timing Requirements for 2764 EPROM

• TAVDV = ?

• TRLDV = ?

• TDVWH = ?

• TWHDX = ?

• TWLWH = ?

University of Tehran 36

M2764A Read Mode AC Characteristics

-3 -4 Symbol Alt Parameter Min Max Min Max

Units

tAVQV tACC Address Valid to Output Valid

180 200 ns

tELQV tCE Chip Enable Low to Output Valid

180 200 ns

tGLQV tOE Output Enable Low to Output Valid

65 75 ns

tEHQZ tDF Chip Enable High to Ourput Hi-Z

0 55 0 55 ns

tGHQZ tDF Output Enable High to Output Hi-Z

0 55 0 55 ns

tAXQX tDH Address Transition to Output Transition

0 0 ns

University of Tehran 37

M2764A Read Mode Timing Diagram

University of Tehran 38

Timing Requirements for 2764 EPROM

• TAVDV = tAVQV

• TRLDV = tGLQV

• TDVWH = N/A

• TWHDX = N/A

• TWLWH = N/A

University of Tehran 39

Timing Requirements for 2764 EPROM

• TAVDV = tAVQV = ?

• TRLDV = tGLQV = ?

• TDVWH = N/A

• TWHDX = N/A

• TWLWH = N/A

University of Tehran 40

M2764A Read Mode AC Characteristics

-3 -4 Symbol Alt Parameter Min Max Min Max

Units

tAVQV tACC Address Valid to Output Valid

180 200 ns

tELQV tCE Chip Enable Low to Output Valid

180 200 ns

tGLQV tOE Output Enable Low to Output Valid

65 75 ns

tEHQZ tDF Chip Enable High to Ourput Hi-Z

0 55 0 55 ns

tGHQZ tDF Output Enable High to Output Hi-Z

0 55 0 55 ns

tAXQX tDH Address Transition to Output Transition

0 0 ns

University of Tehran 41

Timing Requirements for M2764A-3

• TAVDV = tAVQV = 180 ns

• TRLDV = tGLQV = 65 ns

• TDVWH = N/A

• TWHDX = N/A

• TWLWH = N/A

University of Tehran 42

Comparing Timing Requirements of 8088 (using 4 Mhz clock) and M2764A-3

8088 using 4MHz clk Timing Req. HM6264B-8L 610 ns TAVDV or tAVQV 180 ns

555 ns TRLDV or tGLQV 65 ns

University of Tehran 43

What if we need to interface a “slow” memory to the 8088?

University of Tehran 44

Comparing Timing Requirements of 8088 (using 4 Mhz clock) and a certain “slow” memory chip

8088 using 4MHz clk Timing Req. memory chip 610 ns TAVDV or tAA 85 ns

555 ns TRLDV or tOE 45 ns 400 ns TDVWH or tDW 40 ns

88 ns TWHDX or tDH 0 ns

440 ns TWLWH or tWP 500 ns

University of Tehran 45

8088Minimum

Mode

A12

A0:

D7

D0:

MEMRMEMW

A13A14

HM6264B-8L

A12

A0:

D7

D0:

OEWE

CS1 CS2

SLOWMEMORY

A12

A0:

D7

D0:

RDWR

CS

M2764A-3

A12

A0:

Q7

Q0:

G

C

A15A16A17A18A19

::

5V

READY

University of Tehran 46

Recall:Write Pulse Width / Write-Time (TWLWH)

ALE

T1

CLOCK

T2 T3 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

DT/R __

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

A7 - A0 D7 - D0 (to 74LS245)

D7 - D0from 74LS245 to memory

D7 - D0 (to memory)A7 - A0

TWLWH

2TCLCL

University of Tehran 47

Write Pulse Width / Write-Time (TWLWH) w/ 1 wait state

ALE

T1

CLOCK

T2 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

READY

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

D7 - D0from 74LS245 to memory

TWLWH

A7 - A0 D7 - D0 (to memory)

A7 - A0 D7 - D0 (to 74LS245)

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

DT/R __

TW T3

University of Tehran 48

Comparing Timing Requirements of 8088 (using 4 Mhz clock) and a certain memory chip

8088 using 4MHz clk Timing Req. memory chip 610 ns TAVDV or tAA 85 ns

555 ns TRLDV or tOE 45 ns 400 ns + 250 ns TDVWH or tDW 40 ns

88 ns + 250 ns TWHDX or tDH 0 ns

440 ns + 250 ns TWLWH or tWP 500 ns

caused by 1 wait state during a memory write on the “slow” memory chip

University of Tehran 49

How do we produce a wait state?

• By turning the READY input of the 8088 microprocessor to LOW

University of Tehran 50

8088Minimum

Mode

A12

A0:

D7

D0:

MEMRMEMW

A13A14

HM6264B-8L

A12

A0:

D7

D0:

OEWE

CS1 CS2

SLOWMEMORY

A12

A0:

D7

D0:

RDWR

CS

M2764A-3

A12

A0:

Q7

Q0:

G

C

A15A16A17A18A19

::

5V

READY

University of Tehran 51Requirements for the READY input of the 8088

ALE

T1

CLOCK

T2 T4

AD7 - AD0

A15 - A8

A19/S6 - A16/S3

READY

IO/M __

_____

WR

DEN______

A19 - A0from 74LS373 to memory

D7 - D0from 74LS245 to memory

30 ns(min)

A7 - A0 D7 - D0 (to memory)

A7 - A0 D7 - D0 (to 74LS245)

A15 - A8

A19 - A16 S6 - S3

A19 - A0 from 74LS373

DT/R __

TW T3

119 ns(min)

as much as possiblethis should be LOW

before the end of T2 (ifit is not possible, it canbe late by at most 8ns)

University of Tehran 52Requirements for the RDY of the 8284

T1

CLOCK

T2 T4

RDY1

35 ns(min)

TW T3

READY

University of Tehran 53

8088Minimum

Mode

A12

A0:

D7

D0:

MEMRMEMW

A13A14

HM6264B-8L

A12

A0:

D7

D0:

OEWE

CS1 CS2

SLOWMEMORY

A12

A0:

D7

D0:

RDWR

CS

M2764A-3

A12

A0:

Q7

Q0:

G

C

A15A16A17A18A19

::

5V

READY

University of Tehran 54