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  • University of Groningen

    Ferroelectricity-functionalized organic field-effect transistors Naber, Ronald Cornelis Gerard

    IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to cite from it. Please check the document version below.

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    Publication date: 2006

    Link to publication in University of Groningen/UMCG research database

    Citation for published version (APA): Naber, R. C. G. (2006). Ferroelectricity-functionalized organic field-effect transistors. s.n.

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  • Ferroelectricity-functionalized organic field-effect transistors

  • Feroelectricity-functionalized organic field-effect transistors R.C.G. Naber Ph.D. thesis University of Groningen, The Netherlands

    MSC Ph.D.-thesis series 2006-09 ISSN 1570-1530 ISBN 90-367-2608-5

    This work is part of the research programme of the Stichting voor Fundamenteel Onderzoek der Materie (FOM, financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)) and Philips Research. Copyright © 2006 by R.C.G. Naber

  • RIJKSUNIVERSITEIT GRONINGEN

    Ferroelectricity-functionalized organic field-effect transistors

    Proefschrift

    ter verkrijging van het doctoraat in de Wiskunde en Natuurwetenschappen aan de Rijksuniversiteit Groningen

    op gezag van de Rector Magnificus, dr. F. Zwarts, in het openbaar te verdedigen op

    vrijdag 14 juli 2006 om 14.45 uur

    door

    Ronald Cornelis Gerard Naber

    geboren op 22 maart 1976 te Groningen

  • Promotor: Prof. dr. ir. P.W.M. Blom Copromotor: Dr. D.M. de Leeuw Beoordelingscommissie: Prof. dr. T.T.M. Palstra Prof. dr. H. Sirringhaus Prof. dr. ir. B.J. van Wees

  • Contents Voorwoord ......................................................................................................................... 1 Introduction ........................................................................................................................ 3 i. Motivation .................................................................................................................................................... 3 ii. Ferroelectric thin film capacitors ................................................................................................................ 3 iii. Ferroelectricity in P(VDF-TrFE) thin film capacitors .............................................................................. 5 iv. Conjugated polymer semiconductors ........................................................................................................ 8 v. Metal-insulator-semiconductor diodes and field-effect transistors .......................................................... 11 vi. Conjugated polymer based field-effect transistors .................................................................................. 14 vii. Ferroelectric field-effect transistors ....................................................................................................... 17 viii. Short summaries of all chapters ............................................................................................................ 19 1. Ultra-thin ferroelectric polymer films ....................................................................... 23 1.1 Introduction ............................................................................................................................................. 23 1.2 Experimental ........................................................................................................................................... 24 1.3 Charge displacement ............................................................................................................................... 25 1.4 Temporal behaviour ................................................................................................................................ 28 1.5 Electrode interface effects ...................................................................................................................... 29 1.6 Conclusion .............................................................................................................................................. 29 2. Nonvolatile memory functionality of ferroelectric polymer field-effect transistors .................................................................................................................. 31 2.1 Introduction ............................................................................................................................................. 31 2.2 Experimental ........................................................................................................................................... 32 2.3 Properties of the gate dielectric and the semiconductor ......................................................................... 33 2.4 Ferroelectric polymer field-effect transistors ......................................................................................... 35 2.5 Remanent surface charge density ........................................................................................................... 37 2.6 Memory performance ............................................................................................................................. 38 2.7 Ferroelectric-semiconductor interface .................................................................................................... 39 2.8 Conclusion .............................................................................................................................................. 39 3. Programmable polarity in an organic transistor ........................................................ 43 3.1 Introduction ............................................................................................................................................. 43 3.2 Experimental ........................................................................................................................................... 44 3.3 Unipolar charge transport ....................................................................................................................... 45 3.4 Ambipolar charge transport .................................................................................................................... 46 3.5 Remanent electron surface charge density ............................................................................................. 48 3.6 Conclusion .............................................................................................................................................. 49

  • vi Ferroelectricity-functionalized organic field-effect transistors 4. Low-voltage programmable ferroelectric polymer field-effect transistors ............... 51 4.1 Introduction ............................................................................................................................................. 51 4.2 Ferroelectric polymer films spin coated from cyclohexanone ............................................................... 51 4.3 Ferroelectric polymer field-effect transistors ......................................................................................... 53 4.4 Memory retention .................................................................................................................................... 55 4.5 Conclusion .............................................................................................................................................. 56 5. Extrinsic versus intrinsic switching in ultra-thin ferroelectric polymer films ........... 59 5.1 Introduction ............................................................................................................................................. 59 5.2 Thickness scaling with gold electrodes .................................................................................................. 60 5.3 Conclusion .............................................................................................................................................. 61 6. High charge density and mobility in an organic transistor ........................................ 65 6.1 Introduction ............................................................................................................................................. 65 6.2 Experimental ........................................................................................................................................... 66 6.3 Ferroelectric-semic

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