unitedsic ujn1205k 1200v sic jfet - system plus consulting · this jfet is marketed as the ideal...
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©2018 by System Plus Consulting | USCi UJN1205K 1
USCi UJN1205K1200V SiC JFETPower report by Elena BARBARINI & Amine ALLOUCHEJune 2018 – version 1
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
©2018 by System Plus Consulting | USCi UJN1205K 2
Table of Contents
Introduction 4
o Executive Summary
o Reverse Costing Methodology
o Glossary
o SiC Power Device Market
Company Profile 10
o UnitedSiC
o Portfolio
o Supply Chain
Physical Analysis 15
o Summary of the Physical Analysis
o Package analysis
Package Opening
Package Cross-section
o JFET Die
JFET Die View & Dimensions
JFET Delayering & main Blocs
JFET Die Process
JFET Die Cross-Section
JFET Die Process Characteristic
Manufacturing Process 43
o JFET Die Front-End Process
o JFET Fabrication Unit
o Packaging Process & Fabrication unit
Cost Analysis 51
o Summary of the cost analysis
o Yields Explanation & Hypotheses
o JFET die
JFET Die Front-End Cost
JFET Die Probe Test, Thinning & Dicing
JFET Die Wafer Cost
JFET Die Cost
o Complete Device
Assembled Components Cost
Summary of the assembling
Component Cost
Selling Price 62
Comparison between UnitedSiC’s and Semisouth’s SiC JFET 65
Company services 70
©2018 by System Plus Consulting | USCi UJN1205K 3
Overview / Introductiono Executive Summaryo Reverse Costing
Methodologyo Glossary
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Executive Summary
Silicon carbide-based device penetration is expanding in industrial applications. JFET is one of them.
UnitedSiC offers two types of medium-voltage (1200V) SiC JFETs, with the UJN1205K achieving the highest current (38A).
This JFET is marketed as the ideal solution for circuit protection because of its ability to handle peak temperatures and limit current by a rapid decrease due to self-heating.
The device also offers a low on-resistance of 45mΩ, but a very high current density of 4.08 A/mm2 at 25°C, thanks in large part to its trench structure with special openings for contacts.
UnitedSiC employs in its JFET structure a unique angled implantation process to improve threshold voltage control, and a silicide for both gate and source contact to boost contact resistance.
Owing to its design, the device’s cost is very competitive regarding its special steps. , Also, the packaging is optimized for cost-savings.
This report presents a deep technology analysis of the UJN1205K device, assembled in a TO247 package.
Also included is a production cost analysis, and comparisons with its JFET counterpart from SemiSouth. This comparison highlights the differences in the design technology choices and the electrical/geometrical parameters.
©2018 by System Plus Consulting | USCi UJN1205K 4
Overview / Introductiono Executive Summaryo Reverse Costing
Methodologyo Glossary
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
SiC Power Device market - Projection
©2018 by System Plus Consulting | USCi UJN1205K 5
Overview / Introduction
Company Profile & Supply Chain o UnitedSiCo SiC Portfolioo Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
UnitedSiC (USCi) : Company Profile
UnitedSiC is a fabless company that designs SiC semiconductors devices.
2016 UnitedSiC Financial Highlights:
o Sales revenues: $xx Million
o Estimated gross margin: xx%
General Information:
o Date of Establishment
xx
o Headquarter:
Monmouth Junction, New Jersey, USA
xx employees.
Source: «SiC Cascodes and its advantages in power electronic applications», Christopher Rocneanu, WBG Power Conference, 5th December 2017
Company History:
©2018 by System Plus Consulting | USCi UJN1205K 6
Overview / Introduction
Company Profile & Supply Chain o UnitedSiCo SiC Portfolioo Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
SiC Portfolio
UnitedSiC JFETs portfolio proposes 2 types of SiC JFET at 1200V (two packaged and two bare dies)
©2018 by System Plus Consulting | USCi UJN1205K 7
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Datasheet
©2018 by System Plus Consulting | USCi UJN1205K 8
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
o The package type is a TO-247-3
o Package size : xxmm x xxmm x xxmm
o Pin pitch : xxmm
o The package markings include the following markings :
UJN1205K
USCi Logo
P1740 577
Package Views & Dimensions
Package Front view Package Back view
Reference of component
Lot code*Assembly & Date code*
*Source: TO-247-3L JFET OUTLINE, MARK AND TUBE, USCi
©2018 by System Plus Consulting | USCi UJN1205K 9
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Package opening
Gate Wire Bonding:
o 1 Al wire.
o Diameter: xx µm.
o Medium length: xx mm
Source Wire Bonding:
o 2 Al wire.
o Diameter: xx µm.
o Medium length: xx mm
Package
xxxx
Package opening
xxx
xxx
xxxx
Wire bonding
©2018 by System Plus Consulting | USCi UJN1205K 10
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Package Cross-Section
Package cross section
The packaging is standard plastic molding.
©2018 by System Plus Consulting | USCi UJN1205K 11
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Package Cross-Section
Package cross section
©2018 by System Plus Consulting | USCi UJN1205K 12
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Die process – Ring
• Distance between the active area and the die edge: xx µm
241 µm
Transistor process – Optical View
Active area
xx µm
Transistor process – Optical View
Sourcecontact
©2018 by System Plus Consulting | USCi UJN1205K 13
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Die cross section
Epitaxy xx µm
Die cross section: SEM view
• SiC epitaxy layer thickness: xx µm
Silicon carbide substrate
Polyimide
©2018 by System Plus Consulting | USCi UJN1205K 14
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis o Synthesiso Packageo Die designo Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Die cross section : Source trenches
Cross-Section SEM view
• Transistor pitch: xx µm
xx µm
©2018 by System Plus Consulting | USCi UJN1205K 15
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flowo Process flowo Front End Fab Unito Back End Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
JFET Process Flow (1/4)
Epitaxy
•N- Epitaxy
P++ Implantation
•TEOS oxide deposition
•Pattern SiO2
•P++ well implantation
Trench & P+ Implantation
• SiN deposition
•Pattern SiN
•Trench patterning
•P+ well tilted implantation
N- Drift Region Epitaxy
SiC Substrate N+
Drawings not to Scale
SiC Substrate N+
0
00 00
0
©2018 by System Plus Consulting | USCi UJN1205K 16
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso JFET Wafer Costo JFET Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
JFET Front-End Cost
The front-end cost ranges from $xx to $xx according toyield variations.
The main part of the wafer cost is due to xx (xx%). Theepitaxy steps represent a large part of consumable andequipment cost (see details in the following pages).
©2018 by System Plus Consulting | USCi UJN1205K 17
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso JFET Wafer Costo JFET Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
JFET Wafer Cost per process steps
©2018 by System Plus Consulting | USCi UJN1205K 18
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso JFET Wafer Costo JFET Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
JFET Die Cost
The JFET die cost ranges from $xx to $xx according toyield variations.
The Front end manufacturing represents xx% of thecomponent cost, medium yield.
Probe test, dicing and scrap account for xx% of thecomponent cost.
©2018 by System Plus Consulting | USCi UJN1205K 19
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparisono UnitedSiC’s and
Semisouth’s SiC JFETAbout System Plus
Comparison between UnitedSiC’s and Semisouth’s SiC JFET
UJN1205K
SJEP170R550