SemiNex Corporation 100 Corporate Place Peabody, MA 01960 978-326-7700 Email: info@seminex.com www.seminex.com

SemiNex delivers the highest available power at infraredwavelengths between 13xx and 17xx nm. When necessarywe will further optimize the design of our InP laser chips tomeet our customers’ specific optical and electricalperformance needs. Diodes, bars and packages are testedto meet customer and market performance demands.Typical results and packaging options are shown. ContactSemiNex for additional details or to discuss your specificrequirements

701-910-007

High Power SemiNex LasersUp to 35 Watts of Pulsed Power1550 nmCustom Wavelengths Available

FeaturesHigh output powerHigh dynamic power rangeHigh efficiencyStandard Low-Cost Packages

ApplicationsRange FindingLIDARFree Space Optical CommunicationMilitary / Aerospace

TO56 Packaged Laser Diodes

0

5

10

15

20

25

30

35

40

0 10 20 30 40 50 60 70 80 90 100

Puls

ed P

ower

[W]

Current [A]

Pulsed Optical Power

350 µm

180 µm

95 µm

50 µm

Typical TO56 Pulsed LIV

SemiNex Corporation 100 Corporate Place Peabody, MA 01960 978-326-7700 Email: info@seminex.com www.seminex.com

701-910-007

TO-56

1550 Pulsed TO56

Symbol TO56-101 TO56-102 TO56-103 TO56-104 UnitsOpticalOutput Power* Po 12 16 25 35 wattsChip Cavity Length (typical) CL 2500 2500 2500 2500 µmEmitter Width W 50 95 180 350 µmEmitter Height H 1 1 1 1 µmOperating Current Iop 35 50 60 90 AOperating Voltage Vop 6 3.4 3.1 3.3 VThreshold Current Ith 0.5 1 2 3.8 A

Specifications Min Typical MaxPeak Wavelength Range λc 1530 1550 1580 nmSpectral Width Δλ 15 20 nm 3dBTemperature Coefficient Δλ/ΔλT 0.55 nm/CFast Axis Divergence θ_perp 30 deg FWHMSlow Axis Divergence θ_parallel 10 deg FWHMPulse Width PW 150 nsDuty Cycle DC 0.1 %

Specified values are rated at a constant heat sink temperature of 20°C* Pulsed power

Symbol TO56-101-116 TO56-102-116 TO56-103-116 TO56-104-116 UnitsOpticalOutput Power* Po 10.5 14 22 30 wattsChip Cavity Length (typ) CL 2500 2500 2500 2500 µmEmitter Width W 50 95 180 350 µmEmitter Height H 1 1 1 1 µmOperating Current Iop 35 50 60 90 AOperating Voltage Vop 6 3.4 3.1 3.3 VThreshold Current Ith 0.5 1 2 3.8 A

Specifications Min Typical MaxPeak Wavelength Range λc 1530 1550 1580 nmSpectral Width Δλ 15 20 nm 3dBTemp. Coefficient Δλ/ΔλT 0.55 nm/CFast Axis Diverg. θ_perp <5 deg FWHMSlow Axis Diverg. θ_parallel 10 deg FWHMLens effective focal length f 590 µmPulse Width PW 150 nsDuty Cycle DC 0.1 %Operating Temp. -45 85 °CStorage Temp. -55 100 °C

Specified values are rated at a constant heat sink temperature of 20°C*Pulsed Power

1550 Pulsed TO56 with Lens

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliableor accurate. The accuracy or completeness herein is not guaranteed, and no responsibi l i ty is assumed for anyinaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application.SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its describedherein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latestdata. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others.Please contact SemiNex for more information. © 2014 SemiNex Corporation

CLASS II Ib and IV LASERPRODUCTS

This product complies wit h 21CFR1040 as applicable.Laser aperture is on the test s tation. Laser radiationf rom t his produc t i s cons idered an acute hazard to t heskin and eyes .

DANGERVISIB LE / INVISIBLE LASER RA DIATION

AVOID D IR ECT EXPOSUR E TO B EAM

SemiNex Corporation 100 Corporate Place Peabody, MA 01960 978-326-7700 Email: info@seminex.com www.seminex.com

701-910-007

TO-56