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1. Basic Concepts of Optoelectronic Devices
1.1 Maxwell's Equations in Linear Media
Optoelectronic devices are structures in which the electromagnetic field described
by Maxwell's equations and the quantum mechanicallaws for the wavefunction of
the charge carriers cooperate in order to generate, propagate or detect optical
fields.
The laws of quantum mechanics appear explicitly in the description of
optoelectronic devices based on mesoscopic structures and therefore will be
presented briefly at the beginning of Chap. 2 in connection with the definition and
characteristics of structures with mesoscopic dimensions. However, Maxwell's
equations and their solution in dielectric waveguides form the basis of the
description of any optoelectronic devices including quantum ones. Therefore, the
present chapter is entirely dedicated to Maxwell's equations and their solutions for
coupled, periodic, linear and nonlinear dielectric media. We will focus first on
linear media, i.e. media in which the dielectric constants are independent of the
propagating electromagnetic fields, while nonlinear media will be treated in Sect.
1.5.
1.1.1 Maxwell's Equations in Linear and Inhomogeneous Media
Maxwell's equations are:
V xE= -oB I 0(,
V xH = oDI ot+J,
V·B=O,
V·D=p,
(1.1)
where E and H are the electric and magnetic fields, D and Bare the electric
displacement and magnetic induction field, respectively, p is the density of
charge and J is the current density vector. The four field vectors which appear in
Maxwell's equations are related through two constitutive equations that describe
D. Dragoman et al., Advanced Optoelectronic Devices© Springer-Verlag Berlin Heidelberg 1999
2 1. Basie Coneepts of Optoeleetronie Deviees
the response of the medium to the eleetromagnetie field exeitation. These are
B = jJll and D = eE with jJ and e the magnetie permeability and eleetrie
permittivity tensors, respeetively. Sinee throughout the book we will be mainly
eoneemed with eleetromagnetie propagation problems we ean safely ass urne
throughout that p = 0 and J = O. Moreover, for isotropie media, whieh represent
the most eommon situations in optoeleetronie deviees, the e and jJ tensors
beeome sealar quantities. The time domain derivative 8/ 8t appears explieitly
only in problems of optieal pulse propagation. However, any pulse ean be
deeomposed into aseries of harmonie waves, eaeh eharaeterized by a fixed
frequeney w. In this ease all field veetors have an exponential time dependenee
given by the faetor exp(iwt), so that the operator 8/ 8t reduees to a simple
multiplieation with iw. Maxwell's equations for harmonie wave fields in an
isotropie medium then beeome
v xE = -iwf..iH,
V xH = iw&E,
V(f..iH) = 0,
V(&E) = O.
(1.2)
The system of equations (1.2) whieh relates now only the E and H fields ean be
transformed by using simple operator transformations in two independent
equations for E and H whieh deseribe the propagation of the eleetrie and magnetie
field veetors in inhomogeneous and isotropie media:
V2 E + (V f..i I f..i) x V x E + V( EV & 1&) + w2&f..iE = 0,
V2H +(V&I &) xV x H + V(HVf..i1 f..i) + w2&f..iH = O. (1.3)
In a homogenous medium for whieh e(r) = f..i(r) = const. the above equations
reduee to the equations of a harmonie oseillator (Heimholtz equation):
V2F + w2&f..iF = 0, F = E, H. These resemble the equation deseribing the
propagation of the eleetromagnetie field in the vaeuum: V2 F + k1; F = 0 with the
only differenee that the waveveetor ko = sw I c should be replaeed by nko where
the refraetive index n is defmed as n2 = &f..i I &of..io = C2&f..i. S denotes the unit
veetor along the direction of propagation and &0 = 107 I 4Jrc2 Firn, f..io =
4JrlO-7 Hirn are the electric permittivity and magnetic permeability in vacuum,
respectively, with c = 2.998· 108 m/s the velocity of light.
The system of equations (1.3) is generally difficult to solve. However, in most
dielectric waveguides the parameters & and f..i (and implieitly n) have eonstant
values along a direction defined by the unit vector Z which may or may not
1.1 MaxwelI's Equations in Linear Media 3
coincide with the direction of light propagation. When I; and J1. are constant along
the direction of light propagation, the solution ofthe system of equations (1.3) is
found by decomposing the total electric and magnetic fields into modes; otherwise
one can use the matrix method to find the solution of (1.3). These methods will be
briefly discussed in Sects. 1.3 and 1.2, respectively. In both cases, due to the
translational invariance of waveguide properties along the Z direction, the electric
and magnetic fields can be separated as
E(r) = e(Ii )exp(ißz),
H(r) = h(Ii)exp(ißz), (1.4)
where ß is the propagation constant along the Z direction and Ii is the coordinate
vector transverse to the Z axis. Although in a waveguide the complete solutions of
Maxwell's equations are E(r,t) = E(r)exp(iwt) and H{r,t}=H{r}exp{iwt}, with
the spatially varying parts given by (1.4), only their real parts, Re( E( r, t)) and
Re(H(r,t)), have physical meaning. With the exception of the cases where
temporal averages of products of harmonie functions are involved, the form (1.4)
is used to describe the spatially varying parts of the fields. These temporal
averages can however be expressed directly in terms of the spatially varying
components ofthe fields by
F(r, t)G(r, t) = Re(F(r) G*(r))12. (1.5)
In orthogonal coordinates, employed in studying planar or channel waveguides,
r = (x,y,z), Ii = (x,y) while in polar cylindrical coordinates, used for optical
fibers, r = (r, q), z), Ii = (r, q)). The constant of propagation ß can be positive or negative. In this book we
adopt the convention that a positive ß describes an electromagnetic wave
propagating along the positive z direction while a negative value of ß indicates
that the electromagnetic field propagates in the opposite, negative z direction.
Moreover, e and h which are in general complex quantities, can be
decomposed into transverse and longitudinal parts with respect to z:
e(Ii) = et(Ii) + zez(Ii), h(Ii) = ~(Ii) + zhAIi)·
(1.6)
According to the symmetry properties of the electric and magnetic fields at the
inversion ofthe propagation direction, these fields transforms as
4 I. Basic Concepts of OptoeJectronic Devices
e('i) = et('i) - zez('i), h('i) = -Ilt('i) + zhz(Ii),
when z is replaced with -z.
1.1.2 Relations Between the Transverse
and Longitudinal Components of the Electromagnetic Field
in a Translationa"y Invariant Medium
(1.7)
It can be shown that the trans verse and longitudinal components of the
electromagnetic field are not independent, but can be related through a set of
formulae derived by introducing (1.6) into Maxwell's equations (1.2). The result
is:
Ilt = -z x (ßet - iVtez) / mJi,
et = z x (ßIlt - iV thz) / mB,
hz = iZ . V t X et / mJi = - i( V tllt + Ilt . V t In Ji) / ß, ez = iz· Vt x Ilt / mB = -i(Vtet + et . Vt InB) / ß,
(1.8)
where V t is the transverse part of the gradient operator V = V t + ZO / &. Equations (1.8) hold for both orthogonal and polar transverse coordinates. In
nonabsorbing waveguides (with no propagating loss) Band Ji, as weIl as n, have
real values, while for absorbing waveguides they are complex quantities. For
nonabsorbing waveguides (1.7) is consistent with a particular choice of the e and
h components, such that the transverse components are real and the longitudinal
ones imaginary or vice versa. Such a choice, as for example et and Ilt real and
ez and hz imaginary, gives more insight into the physical interpretation.
By eliminating Ilt and et from the first equations in (1.8), the following
relations can be obtained between the transverse and longitudinal components of
the electromagnetic field in a transiationally invariant medium:
et = -i(ßV tez + mJ1i x V thz) / (m 2BJi - ß2),
Ilt = -i(ßVthz - ma x Vthz) /(m2BJi- ß2). (1.9)
The relations derived between the transverse and longitudinal field components
are important because they point out that it is not necessary to solve for the
components ofboth e and h in order to obtain the complete solution of MaxweIl's
1.1 MaxweU's Equations in Linear Media 5
equations. The computation of only one field is sufficient for the calculation of the
remaining three field vectors (ifuse is made also ofthe constitutive equations).
The last two equations in (1.8) have been derived directly from Maxwell's
equations (1.2). They could have been derived also from the system of equations
(1.3) since it is equivalent to (1.2). However, (1.3) gives us additional information
regarding the coupling between the transverse and longitudinal field vectors.
Namely by introducing (1.6) into (1.3) it follows that:
(v; + m2&J.l- ß2)h = -(Vt~ + ißhz )' Vt InJ.l-(V t x h+ ißZ x~) x Vt ln&,
(V; + m2&J.l- ß2)e = -(Vtet + ißez)' Vt ln&-(V t xe + ißZ x et) x Vt InJ.l.
(1.10)
The above result expresses the fact that the terms containing V t ln & and V t In J.l
couple the different field components. In their absence all field components would
independently be solutions of the harmonie oscillator type equations in the left
hand side of (1.10). The terms containing Vt ln& and Vt InJ.l describe the
polarization phenomena due to the waveguide structure. Even in a waveguide with
a step refractive index profile these terms do not vanish everywhere; they are
different from zero at the interfaces between regions with different refractive
indices.
1.2 Matrix Method for Electromagnetic Field Propagation in a Stratified Medium
The simplest method of finding the solution of the electromagnetic field which
propagates in a stratified medium is the matrix method. As mentioned above, it is
applicable when the direction of the field propagation does not coincide with the
direction along which the parameters & and J.l are constant.
Let us ass urne that our stratified medium is formed from aseries of N
altemating dielectrie layers with different & and J.l values. As before, the direction
along wh ich the dielectric constants are invariant is denoted by z, x is the direction
perpendicular to the dielectric layers (stratification direction) and y is chosen such
that the directions x, y, z form a right handed orthogonal system of coordinates
(see Fig. l.l). Ifthe electromagnetic field, which we will suppose for the moment
to be transverse electric (TE) (with e perpendicularly polarized with respect to the
propagation direction), is obliquely incident - in the xz plane - on the stratified
medium, Maxwell's equations with E(x,y,z) = yEy(x,y,z) are:
6 1. Basic Concepts of Optoelectronic Devices
z
~.----t~--r---~-r_X
Fig. 1.1. Schematic diagram of a stratified medium and the coordinate axes
imJ1l!y = 0,
oEy / ox + imJ1l!z = 0,
oE y / oz - imJ1l!x = 0,
OHx / oz - oHz / ox - imeEy = 0,
OHY /ox - oHx /oy = 0,
OHz / oy - OHy /oz = O.
(1.11)
From these it follows that Hy = 0 and Ey, Hz, Hx are functions only ofx and z. From symmetry considerations they can be written asEAx,z)=eAx)exp(ißz),
HAx,z) = hAx)exp(ißz), HAx,z) = hAx) exp(ißz). ey, hx and hz are further related by Maxwell's equations (1.11). One can easily show that eyand hz satisfy
a system of first order coupled equations:
dey / dx = -imflhz ,
dhz / dx = i(ß / mfl- me)ey, (1.12)
with hx = ßey / mfl. So, eyand hz can be expressed as a linear combination of
two particular solutions, ey', hz ' and ey", hz", which satisfy the system (1.12)
and for which d( ey" hz '-ey' hz ' ,) / dx = 0, i.e. the determinant of the matrix
is constant. By choosing these particular solutions such that ey' (0) = hz " (0) = 0,
ey " (0) = hz ' (0) = 1, the general solution for the electric and magnetic field at an
arbitrary x plane can be written in the matrix form
1.2 Matrix Method in a Stratified Medium 7
where the matrix S has unit determinant. Usually the inverse M of the S matrix is
used to relate the input fields to the output fields. For a homogeneous medium
with refractive index n on which the electromagnetic field is incident at an angle ()
with respect to the x axis, ß = kon sin () and the matrix M is
_ ( ) _ ( co~ konxcos()) isin( konxcos())! p) M - M n, Lopt - ( ) ( )' ipsin konxcos() cos konxcos()
(1.14)
with p = ~ c! f1 cos (). F or the particular optical wavelengths for which the optical
thickness Lopt = nxcos() is an integral number of half-wavelengths, the layer is
optically transparent, i.e. M( n, Lopt ) is proportional to the 2 x 2 unit matrix. Since
the tangential components ofthe electric and magnetic fields are continuous at the
interface, the total matrix of a stratified medium consisting of a succession of N
homogeneous layers, each labeled by i, is equal to the product of the matrices
corresponding to each layer:
N
M = DM(n;,Lopt;). 1=1
If p in (1.14) is replaced by q = ~ f1! c cos(), the matrix for a homogeneous
medium is obtained under a transverse magnetic (TM) electromagnetic wave
(with h polarized perpendicular to the propagation direction) excitation; the
general matrix relation (1.13) holds also for this case.
An important case in applications is that of a periodic stratified medium with
M(A) - the matrix corresponding to one period with width A. Then, the matrix
of the total stratified medium formed of N periods is
m12 CN_I(m) )
m22CN-I(m) - CN- 2(m) ,
(1.15)
where m = Tr( M(A)) ! 2 = (mI I + m22 ) ! 2 with mij (i,) = 1,2) the elements of the
M( A) matrix, and
8 1. Basic Concepts of Optoelectronic Devices
the Chebyshev polynomials. For optical wavelengths for which Im! > 1, the
periodic layer acts as a perfect reflector, i.e. stopbands for incident light
wavelengths appear where the argument of the cos-I function in CN(m) takes
forbidden values. For the remaining spectrum regions the radiation passes through
- these are passband regions for the incident wavelength.
The matrix method works equaIly weIl for passive and active dielectric layers.
In the first case n is real while in the second it becomes complex, its imaginary
part describing the gain (or loss).
The most important applications of passive periodic media are as wavelength
filters. In this case one is concemed with the dependence of the reflectance R with
the wavelength A of the electromagnetic field. If the stratified medium
characterized by a total matrix Mwith elements mij (i,j = 1,2) is placed between
a medium with parameters Bin and !-lin from which the light is incident at an
angle Bin and an output medium characterized by Bollt ' !-lout and Bollt , the
intensity reflection coefficient is:
(1.16)
where Pin = ~Bin / !-lin cosBin , Pout = ~Bout / !-lOllt cosBollt ' So, a stratified medium acts as a mirror with an intensity reflection coefficient R. If the period of the
stratified medium consists of two layers with refractive indices nl and n2, widths
LI and L2, and opticallengths nl LI cos BI and n2 L2 cos B2 equal to multiples of
quarter wavelengths, the filter is
- a band-pass filter for:
M = (M(n\>A / 4)M(n2,A /4))N (M(n2,A / 4)M(n\>A / 4)t,
- a short-wave pass for:
M = ( M( n2 ' A /4) M( nl , A /4)) N M( n2 ,A /4) , - a long-wave pass for:
M = (M(nl,A / 4)M(n2,A / 4))N M(nl,A / 4). These filters are extremely useful in a large number of optoelectronic devices. For
example, in semiconductor lasers the usual dielectric mirrors can be replaced by
such filters in order to assure the coherence of the laser radiation. They are used
also as resonant cavity filters in the photodetection process in some p-i-n
structures, to select the wavelength at which the quantum efficiency is a maximum
(Tung and Lee 1997). The most important application for active periodic layers is
the very recently proposed photonic band-edge laser. It consists of altemating
1.2 Matrix Method in a Stratified Medium 9
active and passive layers designed such that the structure works near the stop band
edge where the group velocity has a very low value. This implies that the optical
path length is enlarged and the laser gain is therefore increased by a factor
between 4 and 5 (Dowling et al. 1994).
1.3 Modal Method for Electromagnetic Field Propagation in a Dielectric Waveguide
This method for studying the electromagnetic field propagation is generally used
if the direction along which c and f..l are constant coincides with the propagation
direction of the light wave. In this case the total electric and magnetic fields are
decomposed into a sum over the modal fields, indexed by):
(1.17)
The modal fields are solutions of the source-free Maxwell's equations and
propagate along the z direction with propagation constants ßj determined from
the boundary conditions at the interface between the different layers. All the
relations derived in Sect. 1.1.2 hold for the modes; an important characteristic is
that since ej , h j depend only on Ti, the form of the modes is invariant at
propagation. The possible solutions for ßj can have a discrete spectrum, the case
in which the modes are guided, or a continuous spectrum for the radiation modes.
In the latter case the sum in (1.17) must be replaced by an integral expression.
Radiation modes have an oscillatory behavior and dissipate the energy in a
direction transverse to that of propagation. Therefore, they are undesired modes
and can be suppressed by an appropriate design of the waveguide; we will not
refer to them further. Guided modes are possible only if the refractive index of the
propagating region (core) is higher than that of the surrounding layers (claddings).
Namely,
(1.18)
where ncl and neo are the maximum refractive index of the claddings and core,
respectively. The coefficients aj characterize the coupling between the source
and the modal field). In order to calculate aj we use the orthogonality relations
between any two guided modes:
10 1. Basic Concepts of Optoelectronic Devices
f ej x hk * idA = f ek * x hjidA = N k0j,k, (1.19) Aoo Aoo
where Aoo is the cross-section of the waveguide at infinity and * stands for the
complex conjugate operation. Actually, only the transverse components of the
electric and magnetic fields contribute to the integrals in (1.19). The relation
(1.19) is valid for guided modes in nonabsorbing dielectric waveguides. For
absorbing ones a relation similar to (1.19) can be written but without the complex
conjugate operation. From (1.17) and (1.19) it follows that:
ak = fEx H/idAl Nb (1.20a) Aoo
for nonabsorbing waveguides and
ak = JE x HkidA I Nk (1.20b) Aoo
for absorbing waveguides.
The power carried by the jth mode is obtained by integrating the power density
along the z direction,
S· = (la'l2 12) Re(E . x H* . i) ././ J./
(the component ofthe Poynting vector along i), over A",,:
(1.21a)
It is important to point out that if Pi is positive then P_ j , which represents the
power carried by the jth mode when propagating in the -z direction, is negative.
Its expression can be written directiy as:
P = ~ I a .12 f e . x h .*. z~ dA = - ~ I a ·1 N -./ 2 - } - } -./ 2 - } ./' Aoo
(1.21 b)
and yields a negative result because h_ jt = -h jt
(the relation f e_ j x h_ j ' . idA = f e_ jl x h_ j,* . idA was used). Aoo Aoo
1.3 Modal Method in a Dielectric Waveguide 11
1.3.1 Modes in Slab Waveguides
To exemplify the calculation of modes, we consider first slab waveguides with
constant refractive indices in the core and cladding layers - step refractive index
profiles (see Fig. 1.2).
x n
nell ncl2 d ncl1
z neo -d d x y
-d ncl2
Fig. 1.2. Dielectric slab waveguide
Let us suppose for generality that neo> ncl2 > nell (asymmetrie waveguides).
In the case of symmetrie waveguides ncl2 = ncl1 = nct. For step refractive index
waveguides V t In n 2 = ° (V t In 6" = 0, V t In,l1 = 0) in each layer, but differs from
zero at the interfaces. However, even if Vt ln6",tO, from (l.9) it follows that
there are two exceptional cases in wh ich the different components of the electric
and magnetic field do not couple: the case when ez = ° -transverse electric (TE)
modes, and hz = ° -transverse magnetic (TM) modes.
For a TE mode (ez = 0) by choosing also ex = 0, ey satisfies the Helmholtz
like equations:
(d 2 / dx2 + kJn~o - ß2 )ey = ° (d2 / dx2 + kJn~ll - ß2 )ey = ° (d2 / dx 2 + kJn~12 - ß2 )ey = °
o:::::lxl<d,
x>d,
x<-d.
(l.22)
As mentioned above, for guided modes kOncl2 < ß < konco . lndeed, this is the
requirement to have a sinusoidal behavior of the field in the core and an
exponential field decay in the claddings. Thus, the energy is concentrated in the
core region. The concentration of the field in the core is more effective if the
difference between the core and cladding refractive indices increases.
For symmetrie waveguides, the solution for TE modes is:
12 I. Basic Concepts of Optoelectronic Devices
{
cos Ux 0 :::; I xl < d cosUd
e y = exp( _ WI xl) even modes Ixl~d
exp(- Wd)
(1.23a)
{
sin Ux 0 :::; I xl < d sinUd
e y = x exp( - WI xl) odd mo des
R exp( - W d) I xl ~ d
(1.23b)
where U = ~k~n;o - ß2, W = ~ß2 - k~n;I. From the continuity conditions for ey and its derivative with respect to x at
x = ± d, one obtains the transcendental equations to be solved in order to get ß:
W=UtanUd even modes, (1.24)
W = -U cotanUd - odd modes.
The values of ß obtained from these equations (and the corresponding modes)
are numbered in decreasing order of their value: ßo > ßI > ... > ß N. The index of
the TE mode also indicates the number of zeros ofthe guided electric field: TEo has no zero, TE 1 has only one, and so on. The number of guided TE modes for a
slab waveguide with constant core and cladding refractive indices is M TE = Int[2V / lr], where V is the most important characteristic of the waveguide - the
normalized frequency ofthe waveguide - defined as:
(1.25)
The expression for MTE is derived from the condition that a mode appears only if
ß takes its minimum value kOncl - see also Fig. 1.3. So, the number ofTE modes
is a function of the wavenumber (frequency) of the incident light as weIl as a
function of the geometrical dimensions of the waveguide. The minimum
frequency for which a mode can propagate is called the cut-off frequency of the
mode. Modes can be cutoff not only by decreasing the frequency but also by
reducing the width of the waveguide, since it has the same effect on V. For
waveguides in which the refractive indices have an x variation inside the core
and/or cladding layers, the number of TE modes depends in general on the
variation law of the refractive index.
1.3 Modal Method in a Dielectric Waveguide 13
Ud
V=Ud ..
n ............................ .r= , 0- :
n/2 nnuA= .,' :
TMo
TEo
11 v
Fig. 1.3. Schematic diagram for the number of solutions of ß as a function of
V in a slab waveguide with constant refractive index profiles
The TM modes for a symmetric waveguide satisfy the same equation as (I.22)
for the y component of the magnetic field (hz = 0, hx = 0), with the same solution
as in (1.23). The only difference with respect to TE modes appears in the
boundary conditions, a fact which modifies the tran sc enden tal equations for ß:
n~oW = n~ptanUd even modes,
n~oW = -n~IU cotanUd - odd modes. (1.26)
So, the propagation constants of the TM and TE modes are different, as one
can observe also from Fig. 1.3. However, the indexing of modes is performed in
the same way and the number of zeros is similarly related to the mode index.
Moreover, M TE = M TM . For 0< V < Jr / 2 only one mode (actually two if the
polarization is also considered) is propagating through the waveguide - the
waveguide is called single-moded. If V;::: Jr / 2 several modes can propagate
simultaneously - the waveguide is multimoded. Apart from V, the numerical
aperture NA, defined as
is an important parameter of optical waveguides especially in coupling problems.
For waveguides with large V values the propagation of the electromagnetic
field can be described in the approximation of geometrical optics. In this situation
the diameter of the waveguide is much larger than the wavelength of the light and
the concept of waves can be safely replaced by that of rays. The light field can
14 1. Basic Concepts of Optoelectronic Devices
then be described as a bunch of rays, each incident into the waveguide under a
slightly different angle (J, with the z axis, the individual rays undergoing total
internal reflection at the interface between the core and claddings. Between
successive reflections the ray path is straight in waveguides with a constant
refractive index in the core and cladding; otherwise the path r(s) is determined
by solving the eikonal equation
! (n(r) :) = Vn(r), (1.27)
with s the distance along the ray path. The ray path in a slab waveguide is periodic
if the refractive index of the waveguide is constant along the z direction. In this
case a propagation constant can be defined, as in the wave-like treatment. Namely,
jJ = n( li) cos B( li) = n( 0) cos B( 0) is constant, where (J(!i) is the local angle
between the ray and the z axis at a transverse position li, and 0 = (0,0) is the
trans verse coordinate vector of points situated on the z axis. ß is called the
longitudinal ray invariant. In planar waveguides the ray path equation can be
separately and independently solved in the xz and yz planes. We can focus on the
ray propagation in only one of these planes, say xz, as in the rest of this section.
If total reflection does not take place, i.e. if the ray is incident on the interface
at an angle with the z axis greater than the critical angle at the interface between
the core and cladding Ber{x = ±d) = cos- I (ncl{x = ±d)) / neo{x = ±d), it penetrates
into the cladding region and is lost. These rays are called refracting rays and
correspond to the radiation modes in the wave treatment. Alternatively, a ray at
the trans verse position x = 0 is totally reflected at the interface if its angle with the
z axis is sm aller than the critical angle Ber (0) = cos-1 (ncl (x = ±d)) / neo (x = 0), at
the interface. (Jer = cos-1 (ncl / neo) in waveguides with con.:tant core and cladding
refractive indices. Bound rays are those for which ncl < ß :s; neo and refracting
rays are those for which 0 :s; ß < ncl . Not only bound and refracting rays can be
defined in the geometrical approximation, as for the wave-like treatment, but also
a number of müdes M can be defined by the condition that the phase accumulated
by the ray after propagating one period, including the phase changes at the
reflectiün at the core/claddings interfaces, is a multiple M of 21l.
1.3 Modal Method in a Dielectric Waveguide 15
1.3.2 Modes in a Step Index Fiber
Cireularly symmetrie fields in a step-index fiber (Fig. 1.4) ean be, as for the planar
waveguide, either TE or TM modes. However, (1.10) in polar coordinates also
allows other types of modes, denoted by EH, HE, or LP modes, for which ez and
hz are different from zero. These are called hybrid modes.
x
r
z
y
Fig. 1.4. Circu1ar step fiber
Let us consider such a hybrid mode in a fiber with constant core refractive
index neo and constant cladding refractive index ncl. The z components of the
electric and magnetic fields satisfy the following Helmholtz-like equations in
polar coordinates:
o ~ r < d,
(1.28)
r ;:C:d,
where, as before U = ~ k~ n~o - ß2, W = ~ ß2 - k~ n~l. The solutions separable
in r and r/J of (I .28) are:
ez = !AJ/(Ur)exP(ilr/J), BK/(Wr)exp(ilr/J),
h. = !CJ/(ur)exP(ilr/J), " DK,(Wr)exp(ilr/J),
O~r~d
r?d
O~r~d
r?d
(1.29a)
(1.29b)
with arbitrary constants A, B, C, D and integer I values. The other components of
the electric and magnetic fields can be obtained from (1.8), i.e.
16 1. Basic Concepts of Optoelectronic Devices
er = ~ [ AUJ/(Ur) - iaJ;ol CJ,(Ur) }XP(il~),
elP = i~ [~A UJ, (Ur) + aJJicol CUJ/ (Ur )]exp( il ~), U r ß
hr = ~ [ CUJ/(Ur) + iaJ~ol AJ,(Ur) }XP(il~), O~r~d
elP = i~ [~CJ,(ur) _ aJ&col AUJ"(Ur)]eXP(il~), U r ß
(1.30)
r?d
By writing the eontinuity eonditions for elP , ez , hIP' hz at r = d one obtains a
homogeneous system of four equations with four unknowns: A, B, C, D. This ean
be solved only if its determinant is set equal to zero, a eondition whieh yields a
transeendental equation for ß:
( J/(Ud) + K/(Wd) )(n;oJ,'(Ud) + n;IK/(Wd)) UdJ,(Ud) WdK,(Wd) UdJ,(Ud) WdK,(Wd)
= lz[(~dr +(~dr)(~r (1.31)
For 1= 0, t3 / t3~ = 0 , and all field eomponents are radially symmetrie. There
are two families of solutions for ß in this ease. In the first one ß is obtained from:
(1.32)
( Jo I = -J1, Ko I = - K1); this ease eorresponds to TE modes sinee the only
nonvanishing field eomponents are hr , hz and elP . These are designated as TEOm
where the first subseript stands for 1=0 and the seeond subseript m = 1,2, ...
denotes the number of the solution for ß .
1.3 Modal Method in a Dielectric Waveguide 17
The other class corresponds to the equation:
J1(Ud) _ nz,K1(Wd)
U Jo(Ud) - nZoWKo(Wd) (1.33)
and describes TMOm modes with nonvanishing field components er' ez ' htP .•
For 1,* 0, (1.31) is a second order equation for J/(Ud) / UJ/(Ud). The two
classes of solutions for J/'(Ud) / UJ/(Ud) yield the two hybrid types of modes:
EH/rn and HE/rn, characterized by two indices. The first is equal to land the
second indicates the number of the solution for ß. The fundamental mode, i.e. the
mode with the highest value of the propagation constant is HEll (see also Fig.
1.5).
Ud v= Ud EH2!
5.134···········································:.~
... / : EH 11 ... ~
3.832 ............................... :.~ : ./ :: HE2 !
2.9 ..................... :.~ TMO!
TEO!
2.405 ............... ::-:
..
.. . . . .
~--------~~----~----~----------+v o 2.405 2.9 3.832 5.134
Fig. 1.5. Schematic diagram for the number of solutions of ß as a function of V
in an optical fiber with constant refractive index profiles
The total number of modes for a step-index circular fiber is M = Int[V2 /2];
for fibers with variable core refractive index (the refractive index of the cladding
is generally constant) M depends on the variation law of neo. A schematic
diagram of the number of solutions for ß as a fimction of V in a step-index fiber
is given in Fig. 1.5. For V< 2.405 the fiber is single-moded whereas for greater
V values it is multimoded.
The solutions for the electric and magnetic fields for the EH/rn and HE/rn
modes, even in a step profile fiber, are quite complicated. They can be simplified
18 1. Basic Concepts of Optoelectronic Devices
in weakly guiding fibers, i.e. in fibers where the refractive index of the core
differs only slightly from that ofthe cladding: neo = nc1 = ß / ko and U, W« ß. In this case the continuity condition at the core-cladding interface for the
tangential component of h becomes identical to that for the tangential component
of e; cartesian coordinates can therefore be introduced, simplifying the solutions
ofthe wave equation. For example, erp can be decomposed in terms ofthese new
cartesian components, ex and ey , as erp = -ex sin r/J + ey cos r/J. In such weakly
guiding fibers we can defme a new set of modes - linearly polarized modes - for
wh ich ex or ey vanish. The y-polarized solution of the MaxweII's equations has
the form (Yariv 1985)
ex =0,
e = {AJ,(Ur) exp(ilr/J) , r<d y BK, (Wr) exp(ilr/J), r > d
Iß uey ß 2 • ::J {U ~(J'+I(Ur)exp(i(1 + 1)r/J) + J'_I(Ur)exp(i(I-I)r/J)),r < d
ez = - OJ2&f-l oy = ~ ~ (K'+I(Wr)exp(i{I + 1)r/J)- K'_I(Wr)exp(i{I -I)r/J)),r > d
ß hx =--ey , OJj.1.
hy =0,
h =_i oey ={-~ ~(J'+I(ur)exP(i(t+l)r/J)-J/-I(ur)exP(i(l-l)r/J)),r<d z OJj.1. oX _ lW B (K'+l (Wr) exp(i{I + 1)r/J) + J/-I (Wr) exp(i(I-I)r/J)),r > d
OJj.1. 2
(1.34)
from which it follows that the dominant field components are ey and hx ' i.e. the
electromagnetic field is alm ost transverse (TEM field). The two constants A and B
are not independent; from the continuity condition of ey (and hx ) at r = d it
follows that B = AJ,(Ud) / K,(Wd). Analogously, the x-polarized solution of the
MaxweII's equations in a weakly guiding fiber has a similar form as that given
above for the y-polarized solution, but with its ex , ey, ez ' hx ' hy' hz
components identical with the ey, ex ' OJj.1.hz / ß, hy' -hx , ßez / OJj.1. components
of the y-polarized field. The electromagnetic field is nearly transverse in this case
also since the dominant field components are ex and hy- The B constant is
determined, as above, from the continuity condition at the core-cladding interface
imposed upon ex '
I.3 Modal Method in a Dielectric Waveguide 19
The propagation constants for the new set of approximate solutions of
Maxwell's equations in weakly guiding fibers are determined from the continuity
conditions of ez and hz at the boundary between core and cladding. For both
cases, of the x- and y-polarized modes, the continuity conditions, which must be
valid for all azimuthai angles rjJ, impose the conditions
(1.35)
These two conditions are mathematically equivalent since the recurrence relations
for the Bessel functions are J,(x)/X=(J'_I(X)+J'+I(X))/2 and K,(x)/x= (K'+I(X)-K'_I(X))12. The transcendental equations for the propagation
constants of the modes in weakly guiding fibers are much simpler than the exact
equation (1.31). Since both orthogonally linearly polarized modes have the same
set of propagation constants, they are degenerate; this corresponds to the fact that
the propagation constants ofthe HE'+I,m and EH,_I,m modes become degenerate
in weakly guiding fibers. So, the linearly polarized modes in fibers with
approximately the same refractive index in core and cladding regions, denoted by
LP'm' are a superposition of HE'+I,m and EH,_I,m modes. The set ofEH and HE
modes is replaced by the set of x- and y-polarized LP modes. In particular LP01 is
the new designation for the HEll mode in weakly guiding fibers, the LP02 mode
now denotes the HE 12 mode, the LPll modes include four possible field
distributions denoted formerly as HE 21 , TM o1 and TE o1 modes, and so on. For
the transversely polarized LP modes there is one dominant electric field
component and one dominant magnetic field component, orthogonal of the
electric one. For an LP mode with e and h chosen along two orthogonal radial
directions there is always another LP mode with e, h fields orthogonal to the first
pair.
Unlike the case of planar waveguides, in step profile fibers with V» 1 the
eikonal equation has two invariant quantities for longitudinally independent
refractive index profiles. One is identical to the ß parameter in: the planar
waveguides and the other is [ = neo sinBcosrjJ where rjJ is the angle in the core
cross-section between the tangent to the interface and the projection of the ray
path; rjJ has the same value at any reflection. The azimuthai invariant [ appears
as a consequence of the axisymmetric refractive index profile. The rays for which
[ = 0 are called meridional rays since between reflections they pass through the
center of the fiber. The properties of the meridional rays are identical to those of
bound rays in a planar waveguide; they are also characterized by only one
invariant parameter. The rays which do not pass through the fiber center are called
20 1. Basic Concepts of Optoelectronic Devices
skew rays; they have a helicoidal path determined by both invariants, i.e. by both
angles () and rp. For step index fibers with large V values, as for planar
waveguides, it is possible to define bound rays and refracting rays as those for
which nc1 < jJ ~ neo and 0 ~ jJ2 + P < n;l' respectively. However, the conditions
for the bound and refracting rays do not cover all the possibilities for incident
rays. The remaining part, namely the rays for which n;1 < jJ2 + P ~ n;o and
o ~ ß < nc1 are called tunneling rays and have the interesting property of
tunneling a finite distance into the cladding. At the core-cladding interface the ray
path actually separates into a core path and a cladding path, spatially separated by
a region in which the propagation cannot take place. As a result, the power of the
tunneling rays is lost at propagation due to the cladding part of the solution of the
eikonal equation, but this loss is much sm aller than that associated with the
refracting rays, which have no core path after reflection.
1.3.3 Modes in a Periodic Waveguide
Let us consider a nonmagnetic stratified medium whose period, of length A,
consists of two layers with refractive indices and widths nl' LI and n2 , ~
respectively, such that LI + ~ = A. The propagation ofthe electromagnetic field
through this structure can be described by the matrix method with
M(A) = M(nl,ßtLl)M(n2'~~) where ßl> ~ are the light wavenumbers in the two media along the direction of propagation. Due to the periodicity, the electric
and magnetic fields of a TE mode, for example, are identical after aperiod A to
the incident ones up to a phase constant exp( ißA):
(1.36)
where ß is the propagation constant of the mode. It is determined by equating to
zero the determinant of M( A) exp( ißA) - I, with I the 2 x 2 unit matrix. The
resulting equation is
where X = 1 for the TE modes and X = ni / nr for TM modes. This equation can
have a number ofsolutions ßo,ßt,/h, ... ,ßN ifthe modulus ofthe right-hand side
of (1.37) is less than or equal to 1; otherwise no solution is found, so no modes
1.3 Modal Method in a Dielectric Waveguide 21
propagate through the structure. The frequency ranges for which Icos(ßA)I> 1 are
called stopbands.
Now, (1.36) determines ß from the condition imposed by the periodic
behavior after a stratification period. If the whole periodic structure is considered
(Ma 1994), the propagation constant of the modes are the same as those derived
from (1.36) if A is sufficiently large (A» ,1,). With decreasing A, the coupling
between waveguide periods become important and each mode splits into a number
of submodes equal to the number of periodic sequences and changes itself into a
band. This behavior is to be expected from the results of solid state physics, since
a periodic dielectric structure is similar to a periodic sequence of elementary cells
in a crystal. In Sect. 1.3.1 we have shown that modes can be cutoff (they are not
allowed to propagate ) if the width of the waveguide is decreased, maintaining the
same frequency of electromagnetic radiation. The same happens in the stratified
medium. As A decreases, the modes are cutoff successively until only the TEo mode (band) is allowed to propagate. By further decreasing A (A « ,1,) only one
subband propagates. The periodic structure is now equivalent to a single mode
dielectric waveguide. The stratified medium in these excitation conditions is
called a superlattice. In a superlattice the coupling between different periods
wh ich have widths much smaller than the incident light wavelength is so strong
that the properties of the structure are equivalent to the properties of a
homogeneous medium through which only one mode can propagate. These
properties can sometimes differ a lot from the properties of the materials wh ich
form the periodic waveguide. In particular, an equivalent refractive index
distribution can be defined for the periodic structure, which is different from and
can be determined in terms of the refractive indices of the individual materials of
the stratified medium. The equivalent refractive index for a TE mode is usually
approximated by
I.n2 L . .I .I
n2 -_.I_TE -I. Lj .I
(1.38)
where the sum is taken over all the layers which form the superlattice, whereas for
a TM mode
1 I. 2 Lj j nj
I. Lj .I
(1.39)
22 1. Basic Concepts of Optoe1ectronic Devices
In particular, for an asymmetrie structure the number of layers with refractive
indices nl and n2 are equal, and the sums can be restricted to one period, while in
the symmetrie structure the number of layers differs by one.
Another example of a superlattice is a multiple baITier structure in which in
one material ofthe periodic structure (the barrier) the wavefunction is not allowed
to propagate (it is an evanescent wave). Mathematically, this implies that the
effective wavenumber in that medium, say 1, is imaginary, i.e. ßI must be
replaced by ißI where flJ. is the wavenumber along the propagation direction of
the wave. The other material, in which the propagation of the wavefunction is
aIlowed is called a weIl. In such a structure Saini and Sharma (1996a) have shown
that a better approximation of the equivalent refractive index can be defined, for a
TE mode, as
(1.40)
nm in the formula above is the equivalent refractive index for a given mode
determined from a transcendental equation for the propagation constant of the
structure, as discussed in Sect. 1.3.1, and CN are the Chebyshev polynomials w
with N w the number of weIls in the structure. The quantum analog of a multiple
barrier dielectric structure is called a multiple quantum weIl (MQW); in these
structures the electron wavefunction is not allowed to propagate in the baITier
regions, but only in the weIls.
MQW structures are generally made from altemating layers of semiconductor
elements or semiconductor compounds. The compound semiconductors can be
binary as in III-V or lI-VI semiconductors or temary, or even composed from four
elements. These MQWs have different properties compared to the materials
forming the different layers. For example, an MQW structure formed from
altemating layers of GaAs and AIAs has an unusually high coefficient of
nonlinearity as compared to that ofthe GaAs and AIAs constituents.
1.3.4 Modes in a Bent Step Profile Planar Waveguide
Under the assumption that the refractive index profile is not affected by the bend,
the propagation of the rays in a bent planar waveguide can be reduced to the
propagation of skew rays in a circular fiber of radius R + d where R is the bend
radius (see Fig. 1.6). These rays can therefore be characterized by the azimuthai
invariant land by a longitudinal ray invariant ß = 0 (the ray propagates in a
cross-sectional plane of the equivalent fiber). Since ß = 0, every ray in a bent
1.3 Modal Method in a Dielectric Waveguide 23
waveguide is leaky, i.e. it is either a refracting ray or a tunneling ray. The power
attenuation in bent waveguides is described by the formula
p( 9) = p( 0) exp( - T 9 / 9 p ), (lAI)
where p( 0) is the initial power in the straight section, T is the power
transmission coefficient at ray reflection, given by
(l.42)
whispering-gallery rays 2d
9
Fig. 1.6. Ray paths in a bent waveguide
and 9p is the angular separation between two successive reflections (Snyder and
Love 1983). For waveguides with large V values the transmitted power decreases
as the normalized radius of curvature R / d is reduced. The refracting rays and
the tunneling rays with the largest power loss coefficient are first lost at
propagation through the bent waveguide, the remaining tunneling rays being then
lost with a much smailer power loss coefficient. Actually, the radiation emitted
from bent waveguides is not continuous but has the form of discrete, divergent
rays, the number of radiated beams per unit length increasing as the bend radius
increases (Gambling et al. 1976).
In bent waveguides with a large V value the guided light rays can foilow two
paths between successive reflections at the interfaces: (i) they can undergo
reflections altematively from the inner and outer interfaces or (ii) they can reflect
only from the outer interface. In the latter case they are cailed whispering-gailery
rays. By writing the azimuthai ray invariant as
24 1. Basic Concepts of Optoelectronic Devices
- R-d I == neo cos~ == --neo cos~',
R+d (l.43)
where ~' is the angle between the ray path and the inner interface of the bent
waveguide, it follows that the whispering-gallery rays must satisfy the condition
cos ~ > (R - d) / (R + d). Since in practice R > > d, only a sm all number of rays
satisfy this condition. They propagate almost tangentially to the outer interface of
the bent waveguides, with ~ = o. For whispering-gallery rays ~ is usually much
smaller than the critical angle at the interface between the core and cladding,
0er == cos-1(nc1 / neo), so that they are tunneling rays. Otherwise the rays are
refracting. Although leaky, the power lost by whispering-gallery rays can be low,
especially when the difference between the refractive indices of the core and
cladding is high. The whispering-gallery rays are used in some optoelectronic
devices as for example, in microdisk lasers; their repeated reflections at the bent
interface is equivalent to the repeated reflections of a ray in aresonant cavity.
From a wave-like point of view, it is possible to obtain the whispering-gallery
modes in a bent waveguide (or in a disk-like waveguide) by using the effective
index method. The TE and TM modes are found to be of the form rpM(r) =
J M (r) exp( iM.9) where J M is the Bessel function of order M and r is the radial
coordinate. F or high M values the asymptotic behavior of the Bessel function can
be used to simplify the expression of the modes to rpM(r hA r M, where A is a
constant. If the boundary condition is such that rpM vanishes at the outer
interface, no optical energy would theoretically escape outside the bent
waveguide, in the radial direction. For waveguide disks the radiation can however
escape above the disk; it is emitted within a small divergence angle centered on
the plane of the disk (Li and Liu, 1996).
1.4 Coupled Mode Method for Electromagnetic Field Propagation in Perturbed Waveguides
The coupled mode method is used to calculate the electromagnetic field when an
extemal perturbation acts on a waveguide. This extemal perturbation can be the
presence of another waveguide, as for example in waveguide couplers, or a
perturbation of the shape and/or refractive index profile. We would like to point
out that the periodic perturbation of the reftactive index profile for example could
also be treated by the matrix method applied to periodic structures. Actually the
two methods give results which agree with one another as long as the fractional
change of the refractive index from one layer to the other is relatively small.
1.4 Coupled Mode Method in Perturbed Waveguides 25
In the coupled mode method the guided electric and magnetic modal fields
E k , Hk and their constants of propagation ßk in the unperturbed waveguide are
supposed to be known. The transverse electric and magnetic field components in
the perturbed waveguide, Ept and H pt are written as a sum over the transverse
components ofthe guided fields in the unperturbed waveguide:
(1.44)
where ak and a_k refer to the same kth mode, propagating in the forward and
backward direction, respectively; use has been made of the transformation
relations of the electric and magnetic field components at the inversion of
propagation direction, as given in (1.6) and (1.7).
Supposing now a nonmagnetic medium (f.L = J10 and & = n2 &0) and using the
last equation in (1.8) as weIl as (1.6) and (1.7), one can also express the
longitudinal component of the guided field in the perturbed waveguide in terms of
those of guided modes in the unperturbed one:
(1.45)
In the above equations n and np denote respectively the refractive indices of the
unperturbed and perturbed media.
Our aim is to find the as-yet unknown coefficients bk and b_k (ak and a_k).
To perform this task we use the divergence theorem
J VF.dA=~ JF·zdA+t Fndl A", i}z A", I
(1.46)
where I is the contour of the cross-section at infmity. We apply this theorem for
F = Ep x HZ + EZ x Hp. Due to the property that at great distances from the
considered waveguide, the guided fields become negligible, the last term on the
right-hand side of (1.46) can be neglected. By introducing (1.44) and (1.45) into
the expression for F, using the orthogonality condition for guided modes in the
unperturbed waveguide and after performing simple algebraic operations on the
26 1. Basic Concepts of Optoelectronic Devices
remaining terms in (1.46) one fmaBy obtains the differential equations satisfied by
bk and b_k . For bk it looks like:
(1.47)
where Ck,l are the coupling coefficients defined as:
(1.48)
Ck,_1 is given by an analogous expression with elz replaced by -elz- The
coefficient b_k of the kth mode propagating in the backward direction is
determined from equations similar to (1.47), (1.48) in wh ich bk is replaced with
b_k , ßk with ß-k = -ßb ko with -ko and eZz with - eZz· The coupled mode theory describes the electromagnetic field propagation and
so, the performances of the most passive optoelectronic devices. However, there
are two basic examples of its utility: the directional coupler and the Bragg
reflector. In these examples only two modes are supposed to be coupled so that we
have to solve for bk only a set of two coupled first order differential equations of
the type given in (1.47). We will study in detail these two examples since they
have a lot of applications of their own or as parts of more sophisticated
optoelectronic devices and/or circuits. Solutions for coupled mode equations in
other structures, as for example the coupling due to Dirac-like singularities in &,
can be found as weB (Boucher 1997).
1.4.1 The Directional Waveguide Coupler
The directional waveguide coupler consists of two waveguides, the distance
between which is sufficiently small such that the guided field in one of them is
perturbed by the presence of the other. Let us suppose that the waveguides are
parallel and singlemoded, the transverse guided fields and propagation constants
in the isolated waveguides being denoted by elt,ßI and e2t,ß2 respectively. The
trans verse component of the total field propagating in this structure can then be
written as:
(1.49)
1.4 Coupled Mode Method in Perturbed Waveguides 27
where the coefficients b1, b2 satisfy a system of coupled equations which can be
put in matrix form:
(1.50)
According to (1.48) and to OUf supposition that the perturbation is due to the
presence of the other waveguide, we arrive at the conclusion that Ci,i are
negligible for guided modes since n2 - n~ (we have supposed real refraction
indices) is equal to zero over the region occupied by the waveguide i. The only
contribution to Ci,i comes from the integral over the waveguide j *' i, where the
field components of the waveguide i are very small (the guided fields are
concentrated in the region of the respective waveguide). Therefore, we neglect the
terms Ci';' i = 1,2 in (l.50). Moreover, for a lossless waveguide, i.e. a waveguide
for which the total optical power
is preserved at propagation, the additional relation CI 2 = C; I = C holds with
the assumption that leH I = le2t I = l. The system of equations (l.50) can be solved
easily by replacing the rapidly varying coefficients bi with slowly varying ones
b;(z) = bi ( z) exp( - i(ßI + ~)z /2); with these considerations (l.50) reduces to
where I'!.ß = (ßI - ß2) ! 2. The solution of (1.51) is:
(b;(z)) = ~ ()(b;(0)) ~() M12 z ~() b2 z b2 0
= [cos(p) + iI'!.ßsin(p)! r iC' (sin(p) ! r)
iC(sin(p)!r) )(b;(0)) cos(p)-ißsin(p)!r b;(o) ,
(1.51 )
(l.52)
where r = ~ I'!.ß2 + Ic12 . The original unknowns bl, b2 are related by a matrix
MJ2(z) = exp(i(ßl + ß2)Z !2)Mn(z). One should observe that detMn(z) = 1 and
that for a directional coupler there are no stopbands since ITrMJ2 I::; 2. MJ2 is
periodic, i.e. Mn( z + 2 Lb ) = MJ2 (z) where Lb = Jr ! r is the beat length of the
28 1. Basic Concepts of Optoelectronic Devices
coupler, for wh ich the power distribution in the coupler is identical to that at its
input ( Ml2 = -I with I the 2 x 2 unit matrix).
In most applications the optical power, normalized to unity, is launched in one
waveguide, say waveguide I, i.e. Fj(O) = I, P2(0) = O. Then after a propagation
length L the distribution ofpower in the two waveguides is:
Fj( L) = Ib1( L)12 = Ih;( L)I = I-Ie / rl 2 sin2(rL),
P2(L) = Ib2(L)1 2 = 1b;(L)1 = le / rl 2 sin2(rL). (I.53)
The power transfer in the initially unexcited waveguide after a length L is
characterized by the splitting ratio SR= P2(L)/ Fj(O). As seen from the above
formula, the power transfer depends on the waveguide characteristics and the
coupling length. If the two waveguides are identical, Ir / CI equals I, otherwise it
is greater than I. The t.ß value, and thus the power transfer, for a coupler with
given (identical or nonidentical) waveguides, can be controlled externally, after
the fabrication ofthe coupler by bending the coupling region or by applying along
it an extern al electric field. The last solution is applicable for waveguides made
from electro-optic materials in which the refractive index can be modified by an
applied electric field but has the disadvantage of requiring voltage sourees. The
first solution can be applied to any coupler, without the need of an external
voltage, and it was shown to be fuHy equivalent to the electro-optic tuning of the
power transfer (Feuerstein et a1. 1996). It is based on the modification of the
refractive index profile in bent waveguides due to the stress. In order not to
modify the direction of emerging light from a bent coupler, sine-bends of
controlled length and curvature can be used to tune the power transfer. In these
structures, the coupled waveguides are bent in the coupling plane, the lateral
deviation being described by the expression x(z) = h(z / L - (1I27Z) sin(2m / L)) where (x,z) =(0,0) at the inflection point ofthe bend, L is the length on which
the bend is applied and +h is the maximum transverse deviation from the initial
direction of the waveguides.
Equation (I.53) which expresses the conservation of the total power in the
directional coupler (11 ( L) + P2 ( L) = const. = I) allows us to introduce another
characteristic length of the coupler: the coupling length Lc = Lb /2. Lc is the
length after which the power in the initially unexcited waveguide (the coupled
power) is maximum. This maximum value can at most equal the initial launched
power Fj(O) ifthe two waveguides are identical (if t.ß = 0); it decreases rapidly
with increasing t.ß. Therefore, a directional coupler couples modes with alm ost
the same propagation constant; this implies that they have also the same
1.4 Coupled Mode Method in Perturbed Waveguides 29
propagation direction. For this reason the directional coupler is an example of a
device which couples copropagating modes.
In directional couplers made from non linear media, i.e. media in which the
refractive index depends on the optical light intensity which propagates through
the coupled waveguides, the coupling length becomes a function of the incident
light intensity (Davis and Digonnet 1996) and even bistability in the power
transfer characteristics can occur (Thirstrup 1995b).
1.4.2 Bragg Reflectors
Efficient mode coupling between modes propagating in opposite directions
(counterpropagating modes) can be realized with a periodic perturbation in the
waveguide shape and/or refractive index profile. A periodic refractive index
perturbation can always be written as a Fourier series in the period A:
cf)
~n2('i,z) = I aA'i)exp(i2;rqz / A). (1.54) q=-cf)
If two guided modes EI (r, t) = e l (Ii) exp( ißlz + imt) and E2 (r,t) = e2 (Ii) exp(iß2z + imt) propagate simultaneously in the waveguide, the perturbation
polarization Pp(r,t) = &o~nEI(r,t) due to EI excites E2 if the time mediated
power density which excites E2
(1.55)
(see (1.5)) is different from zero. Conservation of total power requires that the
perturbation polarization due to E2 excites E1 with a time mediated power
density P21 = - ~2·
An overall power transfer between these two guided modes occurs if the
excitation power, obtained by integrating the power density, is different from
zero. This requirement imposes two conditions: - a phase condition, expressed as
f exp(i(ß2 - ßt + 2;rqz / A)z)dz * 0, L»A
(1.56a)
or
ßI - ß2 = 2;rq / A, (l.56b)
30 1. Basic Concepts ofOptoelectronic Devices
- and an amplitude condition:
(l.57a)
or
J aAIi)el*(Ii)e2(Ii)dA =1= O. (1.57b) Aoo
So, the coupling between the two modes is realized through the qth Fourier
harmonics of the perturbation, and its strength is determined by aq .
If one decomposes the total transverse electric field into a sum over eIl and
e21 , the coefficients bj (i = 1,2) of this decomposition satisfy the same set of
coupled equations as (1.47). The solution ofthis set can again be put into a matrix
form as in Sect. 1.4.1 with the difference that I1ß wh ich describes the coupling
efficiency is now given by the expression I1ß = (ßI - ß2 - 2trq I A) 12. I1ß = 0
indicates, as in Sect. 1.4.1, the condition of maximum coupling efficiency. The
wavelength for which I1ß = 0 is called the re sonant wavelength of the Bragg
reflector or simply the Bragg wavelength of the structure. The strength of the
coupling efficiency, given by CI,2 and C2,1, is consistent with the amplitude
condition, since for a TE wave for example, they now become proportional to
These considerations are valid for any counterpropagating coupled modes.
The Bragg reflector in semiconductor structures is formed from a succession of
alternating dielectric layers with the stratification direction parallel with the
propagation direction of the electromagnetic field; the perturbation is in this case
induced by the periodicity of I1n. When the waveguide width is periodically
perturbed, the structure is usually called a Bragg grating. In a Bragg reflector (or
grating) the coupling between the forward and backward propagating modes is
generally due to the first-order Fourier term in the decomposition of I1n2. In this
case ßI = -ß2 = ß, q = land I1ß becomes equal to I1ß = ß - TC I A. The Bragg
wavelength of the structure can simply be calculated from (1.56b) as AB =
2neffA where neff is the effective refractive index of the guided mode in the
structure (=ßlko). The set ofcoupled equations (1.51) in Sect. 1.4.1 can be
directly rewritten for a Bragg reflector as
1.4 Coupled Mode Method in Perturbed Waveguides 31
where CI2 = C; I = C and the indices 1 and 2 of b were replaced by + and - for a better link to their physical interpretation as the coefficients of forward
and backward propagating modes. The relation between CI,2 and C2,l is again
derived from the conservation condition of optical power
(the power in a backward propagating mode is negative).
The solution of (1.58) can be put in a matrix form, analogous to (1.52) in Sect.
1.4.1, but with the difference that the elements of the M + _ matrix depend now on
the value of
Unlike the case of the directional coupler, for a Bragg reflector r can take also
imaginary values. If f:..ß2::?: Iq2 (oscillatory region - permitted for
electromagnetic field propagation) r is real and
~ (cOS(rz)-if:..ßsin(rz)/r iCsin(rz)exp(i2ßz) Ir) M+_ = _ iC' sin(rz) exp( - i2ßz) I r co~rz) + if:..ßsin(rz) Ir'
(1.59a)
whereas if f:..ß2 < ICI2 (stopbands), ris imaginary and
~ _ (cosh(lrl z) - if:..ßsinh(lrlz)/lrl iCsinh(lrlz)/lrl J M+ - • ( ) () ()' (l.59b) - - iC sinh Irlz Ilrl cosh Irlz + if:..ßsinh Irlz Ilr
The parameter which characterizes the performance of a Bragg reflector is the
power reflection coefficient R = ~_ (0) I b+ (0)12 . If an electromagnetic field is
incident on the z = 0 plane on a Bragg reflector of length L, b_ (L) must be zero at
z = Land so we find that
(1.60a)
in the oscillatory regions and
32 1. Basic Concepts of OptoeIectronic Devices
(1.60b)
inside the stopbands. The reflection coefficient, which is a symmetric function of
Aß, i.e. R( Aß) = R( - Aß), is higher in stopbands than in the oscillatory regions
and its maximum value
(1.61 )
is obtained at the center of the stopband for which Aß = O. Rmax depends only on
ICI and L. For ICiL < 1 we have a poor reflector, a Bragg reflector with IClL> 10
is an excellent one over the whole stopband of width 2Aß = 21C1, whereas
lelL "" 3 is an optimum choice for a good reflector obtained with a quite short
Bragg reflector length. We would like to point out that a periodic stratified
medium is not actually equivalent to a mirror with the reflectivity given by
(1.60b) but with a free space propagation length followed by the mirror; the
length of this free space propagation region is given by the length the field
penetrates inside the reflector and depends on the difference in refractive index
between the layers in the periodic structure.
The power transmission coefficient T follows from the power conservation law
as T = 1- R. Since the transmitted power is always less than the incident power
(in media with no net gain) and can be controlled by modifying the frequency
(Aß) ofthe incident electromagnetic field, a Bragg reflector acts as a transmission
amplitude modulator. A periodic stratified medium can also act as a phase
modulator if, unlike the case of the Bragg reflector, the direction of stratification
is perpendicular to that of light propagation (Stegeman and Hall 1990). These
applications ofthe Bragg reflector will be discussed in more detail in Chap. 3.
From formula (1.60b) it follows that a uniform Bragg reflector (grating) has a
reflection spectrum with large sidelobes. In the applications where it is used as a
pass-band filter, it is often desirable to suppress the sidelobes. One way of doing
this is to modulate the coupling efficiency by modulating the grating depth or,
simpler, by using nonperiodic sampled gratings (Shibata et al. 1994). A sampled
grating consists of two sections: the grating region and the uniform, non
modulated region, the ratio between their lengths varying along the waveguide. In
this case the change in the refractive index profile for a ID grating can be
expressed as
An2(x,z) = N(x,z) cos(2JlZ / A)
1.4 Coupled Mode Method in Perturbed Waveguides 33
the grating period A determining the Bragg wavelength and the Fourier
component N determining the shape of the reflection spectrum. More precisely,
the equivalent coupling efficiency between the forward and backward propagating
modes depends on z as
where Lo is the unit length.
To obtain the desired shape of the reflection spectrum N(x,z) must be
computed and then the grating must be fabricated accordingly. To suppress the
sidelobes from 3 dB as in a uniform grating to 10 dB, for example, a sampled
grating is needed with a ratio of the grating to uniform region lengths decreasing
symmetrically in an alm ost parabolical shape towards the edges of the reflecting
structure. Such a structure can also be employed for controlling the field
distribution inside a laser cavity in order to avoid the spatial hole buming effect.
The bandwidth L1 v of a Bragg filter, i.e. the frequency interval in which the
reflection coefficient varies up to a given fraction of its maximum value (usually
to 0.707 of its maximum value) is proportional to the variation of the refractive
index in the periodic structure: L1 v! v::::< L1n! n in the L1n« n approximation.
Filters with broad bandwidths are used in some linear applications as rejection
filters for ultrashort pulses, of the ps and fs scale, or in nonlinear applications for
all-optical switching devices. In waveguides microfabricated in AIGaAs,
broadband Bragg reflectors can be realized by fabricating deep gratings in the
guiding layer (etching the guiding layer) so that a large difference in the refractive
index between AlGaAs and air, of L1n! n = 0.6%, is created. For a depth of the
etching of 300 nm and A = 250 nm, the bandwidth of the filter is 15 nm, centered
around A = 1.6 flm (Espindola et al. 1996). This filter was used for the rejection of
150 fs pulses and had a minimum transmission of 2-5% due to leakage in higher
order modes, not rejected by the Bragg filter wh ich was designed to reject only the
lowest order mode ofthe waveguide.
The expression for the reflection coefficient of a Bragg reflector obtained
above is valid for TE modes; for TM modes the reflection coefficient is different,
as can be inferred for example from the matrix treatment of mode propagation in a
stratified medium (see Sect. 1.2). So, Bragg reflectors are polarization sensitive. In
applications where polarization in sensitive Bragg reflectors are needed, one can
use the structure proposed by Huang et al. (1997). It consists of two periodic
structures separated by a uniform, phase-shift section of length Lp . Each of the
periodic sections has its period A formed from a grating section of length Lg and
34 I. Basic Concepts of Optoelectronic Devices
period Ag and a uniform, phase-shift section of length Ls ' These periodic
inserted phase-shift sections modulate the grating and generate a transmission
spectrum with multiple peaks corresponding to the different spatial harmonics of
the Fourier series of the index perturbation along the structure. Supposing that
only two spatial harmonics are dominant, m = Lg / Ag and m + I, a polarization
independent reflector can be fabricated provided that the resonant condition is
simultaneously satisfied for the TE and TM modes, i.e. provided that
2nTE / A-rn = (m+ 1) / (m+ s)Ag and2nTM / A..m = m / (m+ s)Ag where s = Ls / Ag
and nTE' nTM are the effective refractive indices of the TE and TM modes at the
wavelengths A-rn, A-rM' For a common stopband of the Bragg reflector for both
TE and TM modes with A-rn = hrM = A,B the above conditions give the design
parameters:
where B is the normalized modal birefringence B = (nTE - nTM) / (nTE + nTM)' A
true polarization-independent Bragg reflector is obtained if m is an integer;
otherwise the centers of the stopbands for the two polarizations are off-set.
However, the polarization independent reflector cannot be operated at the center
of the common stopband but at a shifted wavelength. At this operating wavelength
the transmission spectra for the two polarizations are the same, although the
stopbands of the TE and TM modes are shifted in opposite directions. By a proper
design the operating wavelength can be tuned in a range limited by the common
stopbands of the TE and TM modes.
A conventional Bragg reflector used as a mirror usually consists of altemating
layers with high and low refractive indices, the optical lengths of the layers being
equal to A, /4. The CL parameter which determines the reflection coefficient is in
this case a function of the number of pairs and the difference between the
refractive indices in the altemating layers. The phase difference between the rays
reflected from the interfaces of a layer with refractive index n and length I, for a
normal incidence upon the structure, must be
- exp( - 2ikon/) = - exp( - 2ikon( A, /4n)) = - exp( - in)
(the light reflected within the high index layer does not suffer any phase shift at
reflection, whereas that reflected within the low index layer undergoes a phase
shift of 180°). Thus, the reflected rays from the interfaces of one layer are in
phase (Murtaza et al. 1995a). The reflectivity is a maximum for those n and I
values for which the real part of the phase factor is maximized, i.e. for
- co~ 2konl) = 1, from which one recovers the condition I = A, /4n. In these
1.4 Coupled Mode Method in Perturbed Waveguides 35
symmetrie Bragg refleetors the thiekness of eaeh layer must be preeisely given
and, in some materials, espeeially in strained ones, the thiekness of the layer ean
be larger than the eritieal thiekness for whieh no disloeations appear. In sueh
materials it is possible to fabricate asymmetrie Bragg refleetors in whieh the
refleetions from every seeond interface are in phase, the intermediate refleetions
being slightly out of phase, with a phase deviation dependent on the optieal
thiekness deviation from the required ..1., / 4 value. In these refleeting struetures
the peak refleetivity and the bandwidth are sm aller than for symmetrie Bragg
refleetors with the same number of periods.
Asymmetrie or asymmetrie Bragg refleetor has peak refleetivity at a eertain
wavelength; Murtaza et al. (1995a) showed that it is possible to have Bragg
refleetors with peak refleetivities at 2N wavelengths for modulated Bragg
struetures. For example, to obtain a dual-wavelength symmetrie Bragg mirror with
peak refleetivities at two wavelengths, Al and ..1.,2' the expression
- (eos( 2k1l) + eos( 2k21)) = -2 eos( 2kl) eos( 2L'lkl)
must be maximized at the wavelengths ..1.,] and ~; here k], k2 are the
eorresponding waveveetors inside the medium with refraetive index n and
k = (k] + k2 ) /2, L'lk = (k2 - k1) /2. From this eondition it follows that the phase
faetor for a Bragg mirror should be modulated by another faetor with a smaller
spatial frequeney L'lk; if this modulation is done with a square instead of a eosine
funetion, ..1., /4 additional layers should be inserted at appropriate positions to
shift the refleeted phase by Jr. The refleeting strueture is arepetition of abasie unit
formed from a Bragg reflector with a Bragg wavelength ..1., = 2..1.,1 ~ / (..1.,1 + ~) and
L'lA / ..1., - 1 periods with an additional ..1., / 4 layer added sueh that the overall
periodieity is (L'lA/A)..1.,/4, with L'lA=2Al~/(~-Al)' In a similar manner
asymmetrie dual-wavelength Bragg refleetors and higher order Bragg refleetors
ean be designed. In partieular, for a four-wavelength peak mirror, a phase faetor
of the form eos( 2kl) eos( 2L'lk] I) eos( 2L'lk21) must be maximized, with L'lk], L'lk2
the spatial frequeneies of the modulating terms. In the hypothesis of
k > L'lk] > L'lk2 , the four wavelengths for whieh the refleetion eoeffieient has a
peak are now k + L'lk] + L'lk2 , k + L'lk] - L'lk2 , k - MI + L'lk2 , and k - M] - L'lk2 •
If the differenee between the refraetive indices of the alternating Iayers whieh
form the Bragg refleetor is suffieiently high so that L'ln ean no longer be
eonsidered to eause only a perturbation, an exaet analysis of the field propagation
must replaee the approximation derived here for low L'ln. A treatment of this
situation ean be found in the work of Matusehek et al. (1997).
36 1. Basic Concepts of Optoelectronic Devices
1.4.3 Distributed Feedback Lasers
and Lasers with Distributed Bragg Reflectors
The theory in Sect. 1.4.2 can be extended to the case where the perturbed
dielectric medium has a net gain for the propagating electromagnetic field, i.e.
when the medium is amplifying the incident radiation. If we denote the gain
coefficient by g then (1.56) has to be replaced by
(1.62)
The solution of this system of coupled equations can be expressed in a matrix
form where the matrix is identical to that in (1.59) if Aß is replaced by Aß + ig.
Supposing again an electromagnetic field incident on the z == 0 plane with an
amplitude b+(O) = bo, and using the condition that at the output ofthe medium of
length L, [( L) == 0, one obtains inside the stopbands that
- . C sinh(rL )bo b_(O) == -I rcosh(rL) + i(Aß+ ig)sinh(rL) , (1.63a)
b (L) == rbo + r cosh(rL) + i(Aß + ig) sinh(rL) ,
(1.63b)
where r == ~ - (Aß + ig) 2 + Icf. Because r is now complex, a quite different
situation appears if
r cosh(rL) = (g - iLlß) sinh(rL). (1.64)
In this case the reflected field h:. ( 0) and the transmitted field b+ ( L) can be
different from zero even if bo == 0 - the device is working as an oscillator and
(1.64) describes the threshold condition for laser operation. The light wavelengths
for wh ich the condition (1.64) is satisfied are called the oscillating or lasing
modes of the structure. The periodic perturbation couples the modes in an
amplifying medium (creates a feedback between them) so that they become
coherent if condition (1.64) is met. In this way the periodic perturbation replaces
the mirrors in usual lasers. If the periodic perturbation is imposed over the entire
length of the amplifying medium, the device is called a distributed feedback
(DFB) laser while if it is imposed only on regions surrounding the active medium
the device is called a distributed Bragg reflector (DBR) laser (see Fig. 1.7). In the
last case the periodic perturbed regions are not amplifying (are passive or even
1.4 Coupled Mode Method in Perturbed Waveguides 37
absorbing regions with a negative g) and act as mirrors which surround the active
region with a positive gain. The lasing condition for DBR lasers is not given by
(1.64) but by the condition that the field intensity after a round-trip passing
through the structure is identical. This condition will be derived in Sect. 2.3. The
lasing modes are those for which standing wave light patterns are formed in the
structure. A more complete description of DFB and DBR lasers can be found in
Chap. 13 ofthe excellent book ofYariv (1985).
active region
a b
active region
Fig. 1.7. Schematic diagram of(a) the DBR and (b) the DFB laser
In all the expressions above the gain coefficient g should be understood as the
net gain coefficient, i.e. the difference between the gain and los ses in the media.
Moreover, in DFB lasers the above coupled-mode theory holds only for perfectly
antireflection coated structures, with no additional feedback than that provided by
the counterpropagating modes themselves.
DFB lasers are compact, have low threshold currents, narrow linewidth due to
the spectral filtering of the Bragg structure and reduced sensitivity to optical
feedback. Therefore, they are widely used in many applications; quantum weil
(QW) DFB lasers have been fabricated recently (see Sect. 2.3.5). For this reason
we will discuss in detail in this section the coupling mechanisms and characteristic
features of DFB lasers, leaving for Sect. 2.3.5 only the presentation of the DFB
lasers with QWs as active materials. There are two coupling mechanisms in DFB
lasers, both described by the coupled mode theory presented above: the gain
coupling and index coupling mechanisms.
In gain-coupled DFB lasers the net optical gain is periodically modulated (!ln
above refers to the complex part ofthe refractive index), the frequency-dependent
feedback between the forward and backward traveling waves fixing the lasing
wavelength at the modulation period. These lasers are basically single-mode light
sources with good side mode suppression between the lasing mode and other
possible modes; they are more sensitive to external feedback than strong index
coupled lasers (with CL > 3) but less sensitive than weakly index coupled lasers
(with CL < 0.5). For non-antireflection coated, gain-coupled DFB lasers, the yield
38 l. Basic Concepts ofOptoelectronic Devices
is better than that for antireflection coated devices with the same gain coupling
coefficient; moreover, the feedback sensitivity and spatial hole burning effects are
decreased in non-antireflection coated devices with a low reflection coefficient
(as-cleaved for example).
In index-coupled DFB lasers there is no modulation of the optical gain and
therefore the laser tends to emit in two degenerate modes located at the edges of
the Bragg reflection band; An is in this case the real part of the refractive index.
To avoid the emission degeneracy, a quarter-wave shift, a width-modulated stripe
or a taper is introduced in the central region of the active medium. These solutions
have the disadvantage of spatial hole burning which cause in its turn multimode
operation at injection currents not far from threshold. However, the spatial hole
burning is beneficial in that it lowers the threshold current in strongly coupled
structures, due to the induced nonlinearities. The spatial hole burning is due to the
nonuniform photon density, carrier distribution (and thus the gain coefficient, the
refractive index profile of the active medium and propagation coefficient) along
the cavity length caused by the periodic coupling structure.
To increase the modulation bandwidth (the frequency excitation range for a
-3 dB (0.707 from the maximum value) response - see Sect. 2.3) well beyond
that of usual DFB lasers, which is limited by the electron-photon resonance, a
two-contact, push-pull modulated DFB laser can be used. The modulation is done
by changing the currents in the two electrodes such that their sum remains
constant. In this way the optical power within the laser is longitudinally displaced
towards the highly pumped part while the carrier density changes during
switching are smaller than in devices with a single contact. At low powers the
modulation bandwidth is limited by a cut-off frequency which increases linearly
with the power and can attain values between 20 GHz and 100 GHz. This cut-off
frequency is related to the time needed for the carrier and photons to reach a new
equilibrium state when the excitation currents switch in the two contacts; it is
smaller the larger the change in the gain coefficient due to the change in carrier
concentration (the larger the differential gain - see Sect. 2.3) and is inversely
proportional to the optical power. This behavior can be explained by a small
signal model as that developed for example by Marcenac et al. (1994). The cut-off
frequency is upper limited by the resonance frequency corresponding to the
spacing between the lasing mode and its closest side mode. To increase this
resonance frequency shorter lasers with lower coupling coefficients should be
used; a trade-off of the coupling efficiency between low power threshold and
large modulation bandwidth is however desired. For a second order grating, anti
reflection coated structure the modulation bandwidth can be more than doubled
1.4 Coupled Mode Method in Perturbed Waveguides 39
(for example from 21 GHz for a single contact laser to 49 GHz for one with two
contacts for an injection current of200 mA).
1.4.3.1 Index-Coupled Distributed Feedback Lasers
with Reduced Spatial Hole Burning
In order to reduce spatial hole burning the electric field distribution along the
cavity length has to be flattened, without disturbing the periodic mode coupling.
Theoretical analysis has established that for index-coupled DFB lasers there is an
optimum coupling factor (CL == 1.25) which assures a trade-off between hole
buming and stable, single-mode operation even at high output powers. Some
solutions for spatial hole buming decrease in DFB lasers are: quarter wavelength
shifted (or Ir / 2 phase shifted) lasers (Fig. 1.8a), DFB lasers with nonuniform
stripe width as wide (Fig. 1.8b) or narrow (Fig. 1.8c) stripe geometries and
double-tapered DFB lasers (Fig. 1.8d).
"'I a b c
Fig. 1.8. (a) Quarter wavelength shifted, (b) wide stripe, (c) narrow stripe and
(d) double tapered DFB lasers
A comparison between the first three solutions for hole buming decrease can be
found in Correc (1994). He has shown that the phase-shifted lasers have a high
yield in the single-mode operation regime. In strong phase-shifted coupled
devices (CL == 3) the photon density is higher in the center of the phase-shifted
structure, the number of carriers consumed there is higher at currents higher than
the threshold and the output power-injection current characteristic is superlinear.
As a consequence of the fact that the threshold gain increases with the injection
current, the spectral position of the stopband moves towards shorter wavelengths
and the two modes become nondegenerate. The one which lases first is that
situated at the longer wavelength side of the stopband, the other lasing also at
40 1. Basic Concepts of Optoelectronic Devices
higher injection currents; the net result is a slight decrease ofthe lasing mode with
an increase in the injection current. In low coupled phase-shifted structures (CL ;:::;
0.5) the situation is opposite: the photon density is higher at the facets than in the
center, due to insufficient grating confinement, and the first lasing mode is that at
longer wavelengths inside the stopband.
To flatten the photon density variation along the cavity due to the localized
phase shift of the grating, this region can be spread over a larger distance Ls by
widening or narrowing the waveguide width by modulating the stripe width. To
obtain a phase shift of tr / 2 the propagation constant of the phase shifter region
must differ from that in the uniform region by I1ß = 2trl1neff / A =(2m + l)tr / 2Ls
where I1neff is the difference between the effective refractive indices of the phase
shifter and uniform regions and m is an integer. In wide phase shifter structures
(Fig. I.8b) with I1neff > 0 the lasing mode at threshold is located on the left side
of the stopband (I1ßL > 0); with increasing current densities the stopband moves
towards lower wavelengths (the carrier density increases), the lasing mode moves
towards its right side and the other mode begins lasing also at higher injection
levels. In narrower phase shifters with I1neff < 0 the lasing mode is located at
threshold on the right side of the stopband and moves to the right, away from the
Bragg wavelength as the injection current increases. Comparing the intensity of
the lasing mode, it was found that the most sensitive structure is the wide phase
shifter whereas the less sensitive one is the narrow phase shifter; the wide phase
shifter is also more sensitive for hole burning than the narrow phase shifter, for
the same photon distribution at threshold.
Double-tapered DFBs (Fig. I.8d) can also be used to reduce the spatial hole
burning effects and to maintain a stable, single-mode operation in structures with
CL > 2. Due to their special geometry the optical power density at the facets is
minimized since the optical mode has a greater spatial extent at the facets
compared to the central, phase adjusting region, and so the double-tapered DFB
laser can be used at higher output powers than the other configurations. Yu (1997)
have shown that double-tapered DFBs also have a better dynamic response under
electrical modulation. In these devices the index and gain profiles, the propagation
constant and its deviation from the Bragg constant and any other characteristics
are dependent on the waveguide dimensions. Numerical simulations have shown
that the relaxation frequency (the frequency of maximum small-signal response to
a modulated excitation - see Sect. 2.3) generally increases with the stripe width,
the CL product and the lateral carrier diffusion constant, up to a saturation value.
So, high relaxation frequencies and single-lateral mode operation can be obtained
in double-tapered DFBs by widening the tapered regions whereas in other DFB
1.4 Coupled Mode Method in Perturbed Waveguides 41
configurations the increase of the relaxation frequency would imply the increase
ofthe stripe width. This will however also excite the higher order modes.
The introduction of a modulated grating pitch (period) can also introduce a
A /4 phase shift over a distributed length Lc if the period of the center section
Ac (over which the corrugation pitch is modulated) differs from that of the outer
sections, A, such that Ac = A( I ± A / 2 LJ However, unlike in the localized A /4
phase shifter where the lasing wavelength coincides with the Bragg wavelength,
here, as for the modulated stripe lasers, the emission wavelength does not coincide
with AB. The detuning of the lasing wavenumber ß = 2nneff / A from the Bragg
wavenumber ßB = TC / A, !':..ß = ß - ßB' is negative if A > A and positive if the
inverse inequality occurs. A small negative detuning causes laser oscillations at
the upper frequency of the band edge, the lasing mode approaching the Bragg
wavelength as the detuning increases. The transition from positive to negative
values of the detuning corresponds to a mode jump from the high frequency to the
low frequency edge of the stopband. Zero Bragg detuning can be obtained for a
given corrugation pitch at a fixed Lc value, but this does not correspond to the
condition of a distributed A /4 phase shift. However, for a fixed length of the
DFB laser and of the detuning region, an optimum Bragg detuning can be found
to maximize the output power for given sidemode suppression. As a rule of
thumb, for stable single-mode operation up to high powers the inequality
1 :s; TC( I/Ac - I / A) / C :s; 2 should be satisfied. When the above defined quantity
is less than one and approach es zero, an unstable region associated with
bifurcations appears at high optical powers. A modulated corrugation pitch can
also be produced by S-bending a waveguide DFB laser (see Olesen et al. (1995)
and references therein). The tilt of the stripe with respect to the grating in the
center of an S-bent structure creates a distributed phase shift region. A more
complex version of the modulated grating pitch laser is the distributed coupling
structure, consisting of a four-section laser with identical inner and outer sections,
of lengths Li and Lo respectively and grating periods Ai and Ao . At the center
of the structure a A / 4 phase shifter is introduced. The single mode operation
range is greatly enhanced and the laser behavior under transient conditions is
much improved since the carrier density longitudinal profile remains clamped
(Fessant 1997).
1.4.3.2 Mixed Coupled Distributed Feedback Lasers
For better performances the index- and gain-coupling mechanisms can be
combined in the so-called mixed coupled lasers. Lowery and Novak (1994) have
studied the performances of perfectly antireflection coated, mixed coupled DFB
42 1. Basic Concepts of Optoelectronic Devices
lasers as a function of r - the ratio between the index coupling to the gain
coupling coefficients; r is positive for in-phase index-to-gain coupling and can be
negative for antiphase index-to-gain coupling. In these structures the maximum
modulation bandwidth for example can increase up to 11 GHz for an antiphase
coupled laser with r = -153 from 7 GHz for a pure index-coupled laser or 6.5
GHz for a pure gain-coupled laser; in-phase coupling decreases the modulation
bandwidth by up to 3 GHz for r = 1.73. It was shown that the threshold current
(minimum injection current needed to obtain a positive g value - see Sect. 2.3)
decreases with increasing modulus of the r parameter. The lasing mode has the
same side mode suppression ratio as in pure gain-coupled structures but its
wavelength can be shifted from the center of the stopband by varying r: to the
blue end of the stopband for anti-phase coupling and to the red end for in-phase
coupling. The resonant frequency ofthe anti-phased coupled lasers (7.3 GHz) was
found to be higher than for in-phase coupled structures (2.1 GHz) and higher than
that of index-coupled lasers (= 4 GHz) or gain coupled lasers (5.6 GHz). In-phase
coupled lasers have a larger chirp (nonlinear phase response at modulating
excitations) due to spatial hole burning than pure gain-coupled lasers, whereas
antiphase coupled structures have smaller chirps. The latter structures also have
smaller noises than pure gain coupled devices and are more tolerant to external
feedback than index-coupled structures.
In even more complex DFB laser structures the index- and gain-coupling
periodic structures can be dephased with an arbitrary phase !':!.rjJ, i.e. the index and
gain variation (supposedly sinusoidal) along the z axis are described by
n(z)=n+!':!.nco~2JlZ/A+rjJ)and g(z) = g+!':!.gcos(2JlZ/A+rjJ+!':!.rjJ). !':!.rjJ=O or
lf correspond to the in-phase and antiphase coupled grating structures,
respectively. By varying !':!.rjJ the overlap between the light standing wave pattern
formed due to the index coupling and the gain coupling structure can be modified
such that the depth of the standing pattern is decreased and the optical field
uniformity is improved, thus decreasing spatial hole burning effects. The output
light is spectrally narrower and its possible frequency range is larger than in in
phased coupled structures. Numerical simulations (Kwon 1996) have shown that
increasing !':!.rjJ from 0 to lf results in an increase of the effective coupling
coefficient between the counterpropagating modes when !':!.ßL < 0 and to a
decrease of the effective coupling coefficient if !':!.ßL > O. The single mode yield
dependence on !':!.rjJ is determined by the coatings. For example, for antireflection
coated structures it is a maximum for !':!.rjJ = 0 or lf, decreases for !':!.rjJ = lf / 4 or
3lf / 4 and is even less for !':!.rjJ = TC / 2. On the contrary, for laser structures with
one high-reflection facet and one antireflection coated (HR-AR lasers), the single
mode yield is a maximum for !':!.rjJ = TC / 4 and 3TC / 4 and decreases in the order
1.4 Coupled Mode Method in Perturbed Waveguides 43
I':!.fjJ = 7r /2, I':!.fjJ = 0 or 7r, I':!.fjJ = 57r / 4 or 77r / 4 and I':!.fjJ = 37r / 2. Moreover, the
yield curves for I':!.fjJ = 0 are more sensitive than those for I':!.fjJ = 7r / 4 at an optical
field nonuniformity inside the structure. This better field uniformity in HR-AR
lasers with I':!.fjJ = 7r / 4 explains the 2.4 times higher yield than for I':!.fjJ = 0 lasers.
As the reflectivity of the anti-reflection coating increases, however, the yield of
the I':!.fjJ = 7r / 4 laser decreases whereas that for I':!.fjJ = 0 increases up to a point
where they are equal. The phase difference between the index and the gain
gratings also influences the reflection coefficient of the periodic structure: it is a
minimum for I':!.fjJ = 7r / 2 where the feedback from the index and gain gratings are
out-of-phase and cancel each other, and increases with approximately an order of
magnitude if moving away, on either side, from the I':!.fjJ = 7r / 2 condition.
Actually, by modifying I':!.fjJ while keeping constant the overall coupling
coefficient it is possible to move the peak of the reflection coefficient at different
positions relative to the Bragg frequency (Cardimona et al. 1995). The lasing
frequency of such a dephased mixed coupled DFB laser could also be tuned if I':!.fjJ
could be varied in real time by applying an extern al electric field.
In DFB lasers with periodic modulation of either the refractive index profile or
the gain, and in which the phase condition I':!.ß = 0 is not realized for the first
order (q = I) Fourier term, the emitted wavelength can be derived from (1.56b)
for ß2 = -ßI = koneff as A = 2Aneff / q where neff is the effective refractive
index of the structure. So, the emission wavelength can be tuned by varying the
period of the grating. However, when the grating period is sm all the wavelength
variation can be too coarse. For example, for a ZnSe based grating with A = 90
nm, used to obtain blue laser radiation, a variation of the grating period of 1 nm
results in a change ofthe energy ofthe emitted light of25 meV. In order to obtain
a much smoother variation of the output laser radiation wavelength periodic
modulated gratings should be used (Eisert et al. 1996). Let us suppose for
example that the grating consists of periodic modules with an average period
Aav = (qIAI + q2A2) / (ql + q2) formed by a succession of one or more periods of
lengths AI and A2 with ql' q2 integer numbers. Since the effect of this
composed grating on A averages over Aav , by varying ql and q2 it should be
possible to tune the emission wavelength for both refractive index profile and gain
modulated structures. In particular, for gain modulated DFB lasers such a
composed grating can be realized by a selective implantation with a Ga focused
ion beam. For AI = 87.7 nm, A2 = 91.2 nm, and ql and q2 related by the
condition that ql + q2 = 20, the wavelength of the emitted light can be tuned in
steps ofO.7 nm, corresponding to a step ofthe average period of0.14 nm; or, with
AI = 92 nm, A2 = 96 nm, with ql' q2 independently varying between 1 and 3, a
44 1. Basic Concepts of Optoelectronic Devices
fine tuning of A between 506.8 nm and 482.8 nm has been obtained with the same
variation step of the gratings of I nm.
DFB lasers with longitudinal variation of the coupling constant along the
propagation axis have recently shown remarkable properties (Boucher et a1.
1997). In these mixed-coupled tapered gratings both the index- and gain-coupling
constants depend on Z as q(z)exp(iqJJ and Cg(z)exp(iqJg), respectively, giving
rise to qualitatively new effects. For example, for a pure index-coupled DFB
structure with Cj (z) = Co exp( ajz) the exponential dependent coupling coefficient
introduces an asymmetry between the forward and backward propagating waves.
The first experiences an average gain of g - aj /2 whereas the average gain for
the second wave is g + aj /2, g being the gain of the active medium. If the
gradient of the coupling coefficient is adequately changed, the forward
propagating wave is left unchanged whereas the backward propagating wave can
be enhanced or attenuated. In this case the device behaves in an apparently
puzzling manner: it has equal transmission coefficients for left-to-right and right
to-left propagating waves but different reflectivities. An explanation can be given
by taking into account that close to the Bragg condition the wave incident on the
structure by the weaker coupling side will penetrate deeper than a wave incident
from the opposite direction. The emitted intensities from the two facets of a DFB
laser with such a tapered grating are different and dependent on the mode,
although the mode location is the same as in periodic DFB structures. For
complex-coupled gratings with qJj-qJg=Jr/2, Cj(z)=Cocosh(az), Cg(z)= Co sinh( az), the device is symmetric with respect to the two propagating waves
and the average gain is shifted by a. However, the reflection coefficients for the
two directions are different, due to the dephasing of the index and gain grating.
For mixed coupled gratings with qJj-qJg=O, Cj(z)=Coco~az), Cg(Z) =
Co sin( az) the structure is again asymmetric, but a is equivalent to a shift of the
detuning. The reflectivity curve is nonsymmetrically shifted for the two propaga
ting directions; it is possible to use it as a one-way-only dichroic reflective filter.
1.4.3.3 Tunable Distributed Feedback
and Distributed Bragg Reflector Lasers
In many applications tunable light sources are needed. One of the simplest ways
to tune the wavelength of a DFB laser is to vary the ridge width of the laser,
modifying in this way, in a controllable manner, the modal index of the
waveguide structure. Altematively, one can tilt the stripe with respect to the
grating at the expense of deteriorating the coupling coefficient with increasing tilt
angle; the threshold current as weil as the stop bandwidth are strongly varying
1.4 Coupled Mode Method in Perturbed Waveguides 45
functions of the tilt angle. The coupling coefficient reduces by a factor
co~](x sin 0) where K is the grating wavevector, 0 the tilt angle and x the
transverse direction. For example, it was found to decrease from 120 cm-] to
20 cm-1 as the ridge was tilted from 0° to 10°. At the same time the stopband is
red-shifted, narrowed and the power in the lasing mode decreases. The threshold
current density also increases with the tilt angle as J th = J 0 exp( gth ( 0) ! go) where gth is the threshold gain coefficient and go a constant. Oue to the increase
of the threshold current with tilt angle, the operating temperature of the laser
increases, and the ga in peak moves toward the longer wavelength side. Practical
wavelength tuning ranges with this method do not however exceed 10 nm - a
quite modest result (Sarangan et al. 1996).
Another simple method of tuning OFB lasers is to use multielectrode
structures. Usually, the upper electrode is divided into three parts, the outer ones
being electrically connected. In phase-shifted OFB lasers the central electrode is
grown upon the phase-shifting region: by varying the current in the central
electrode the propagation constant, the phase-shift and the emission wavelength
can be modified. An increase of the current in the phase-shifting region leads to a
decrease in the lasing wavelength, without observable degradation in the side
mode suppression ratio. The tuning range for optimized structures is alm ost as
large as the stopband. Even for uniform OFB lasers with electrodes of equal
length, the injection currents select the emission wavelength. If the current in the
central electrode 1 c is larger than that in the lateral electrodes, 1], the right mode
in the stopband lases, whereas the left mode emits for the opposite case.
Moreover, when 1 c > 1] the emission wavelength can be tuned: it increases with
the current in the central electrode, decreases with the current in the lateral
electrodes and the rate of change decreases with 1 c. The tunability range
decreases with laser length and increases when the light confinement factor in the
active region increases. However, the tunability range is extremely smalI: about
6 Ä. The multielectrode solution is thus not suitable for wide tunable sources - it
is more useful for reducing the hole burning effects when operated in the 1 c > 1]
regime since then the current injection profile is similar to that of the photons in
the cavity (Correc 1996).
Tunable distributed Bragg reflector lasers can be realized in a three-region
configuration. The laser consists of the active region, the passive phase control
region and the OBR, the light being emitted through the cleaved or coated facet of
the active region. The three regions are separately electrically connected, the
wavelength being switched by modifying the currents in the phase control and
OBR regions. The wavelength tuning is due to a modification of the effective
refractive index when the injection current is modified inside the different regions
46 1. Basic Concepts of Optoe1ectronic Devices
of the cavity. The tuning can be discrete (different longitudinal modes of the laser
cavity are selected) when only the DBR current I d is changed, or continuous
when the lasing wavelength is tuned within the interval between different
longitudinal cavity modes. In the last case both the phase control current I p and
the DBR current are changed according to the relation 1p = kId + 10 where the
offset current 10 adjusts the phase gap between the lasing wavelength and the
Bragg wavelength. In this case the lasing wavelength changes continuously with
the Bragg wavelength, both decreasing as the DBR current increases; however,
the cavity loss under continuous tuning is larger due to the additional loss
introduced by the phase control current. The tuning range is limited by the
generated heat which increases the refractive index and counteracts the refractive
index change produced by the injected currents. The tuning range is limited to a
few nm, but can be switched very fast. Dynamic continuous wavelength tuning is
realized if the wavelength change of the cavity mode equals the change of the
Bragg wavelength. Under fast tuning conditions power oscillations occur when
the current is tumed on and mode hopping occurs, the wavelength rise-up and
fall-down times being different due to the different carrier lifetimes in the two
conditions. This behavior was confirmed by the theoretical model of Teshima
(1995). The switching delay varies between land 2 ns within a mode and
increases to 7.5 ns when a mode jump occurs; within a mode, it decreases as the
Bragg current increases (Zhang and Cartledge 1995).
A continuously tuning three electrode DBR laser with the variation of only one
current is possible when the DBR eIectrode is interdigitated (Ishii et al. 1995);
except for this, the structure of the device is similar to that described above.
However, there is now no need to tune synchronously the Bragg and the
longitudinal cavity modes. One part of the interdigital electrode, of Iength Ld! is
connected to the phase controI electrode, driven by a current I P' The other part,
with interdigital electrode length Ld2 is separately connected to a current source
I d2' WaveIength tuning is achieved by varying the current in the phase shift
region. The wavelength shift of the Bragg mode is given by
~AB / AB = (Ld ! / Ld! + Ld2 )~n / n where ~n is the refractive index change in the
Bragg region when the injection current is modified. By denoting by La' Lp ' LB the lengths of the active region, phase control region and effective length of the
Bragg region, the cavity mode shift can be approximated by
~A / A = (~n / n)[( Lp + LBLd! / (Ld! + Ld2 )) / (La + Lp + LB )]. A mode matching condition between the cavity and Bragg mode can be achieved and maintained if
the interdigitated electrode is designed such that Lp / La = Ld ! / Ld2 . Moreover,
for continuous tuning it is necessary that the spacing between supermodes, created
1.5 Solutions ofMaxwell's Equations in Nonlinear Media 47
by the periodic refractive index variation in the DBR region, be larger than the
tuning range. This imposes another condition for the interdigitated electrode, since
the supermode spacing is given by ~Ilsm = Il~ ! 2n( Ld1 + Ld2 ). For a supermode
spacing of 5.6 nm, a wavelength tuning range of 4.6 nm was obtained with an
output power variation of ll dB during tuning caused by an increased loss; the
side mode suppression ratio was better than 30 dB over the whole tuning range.
1.5 Solutions of Maxwell's Equations in Nonlinear Media
Throughout this book we will refer to nonlinear media and nonlinear effects only
in connection to the media in which the refractive index depends on the
propagating light intensity. We will not refer to the many applications, also
generally referred to as nonlinear phenomena, in which the light frequency is
modified, as in second harmonic generation or parametric amplification. Many
dielectric media become nonlinear at optical frequencies when excited at
moderate power levels, i.e. the refractive index n depends on the intensity of the
optical radiation field Iopt = ( & ! 2 )IEI2 . This is due to the dependence of the
electrical polarization vector P on the electric field E; the explicit form of this
dependence is determined by the symmetry properties of the dielectric crystal.
The most common variation is
n=no+~nlopt, (1.65a)
which is known as the Kerr-like variation of the refractive index. f...n can be
positive or negative, for focusing or defocusing media, respectively. Other
possible types of variation inc1ude
(1.65b)
for saturable nonlinear media and
(1.65c)
no can eventually be complex to inc1ude the effect of gain or loss. The dependence
n = f( Iopt ) changes qualitatively the solutions of Maxwell's equations. For
example, the optical modes are no longer plane waves even for a translationally
invariant waveguide, the stopbands (Little 1994) and modes of periodic structures
(Saini and Sharma 1996b) depend on the light intensity, the transfer characteristic
of directional couplers changes, and optical bistability in directional couplers and
48 1. Basic Concepts of Optoelectronic Devices
lasers appears. However, these effects can only be accounted for in a numerical
analysis, no analytic formulae being in general available.
To study the effect of nonlinearities on the electromagnetic field propagation
we will consider a Kerr-like dependence ofthe refractive index in a waveguide. In
this case some analytical results can be obtained, which can help the
understanding ofthe nonlinear effects. We will also make some assumptions:
i) the nonlinear term of the refractive index is considered as aperturbation of
the linear one I~nl« no, ii) the field polarization is maintained during the propagation, i.e. the tensorial
character of ~n is neglected,
iii) the electromagnetic field is quasi-monochromatic, i.e. its frequency
spectrum centered around lüo has a width ~lü such that ~lü« lüo. So, it is no
longer an harmonic field but an optical pulse.
To avoid unnecessary complications we will solve the equation satisfied by the
electric field (the first equation in (1.3)) in a nonlinear step refractive index
profile, i.e. we are searching for solutions ofthe following equation:
V2E + k~n2(lü)E = O. (1.66)
We look for separable solutions of (1.66) for each component of the electric
field; for example the solution for Ez is supposed to have the form
(1.67)
with G a slow dependent function of z. ßo is the value of the propagation
constant for lü = lüo. With this decomposition (1.66) is equivalent to:
{V; F + (n 2 k5 -~ )F = 0
. IJG 2 2 21ßO Tz + (ßNL - ßo )G = 0, (1.68)
where PNL is introduced as a constant for now. The first equation of (1.68) is
identical to the equation satisfied by the electrical field in a linear waveguide with
a step-like refraction index profile. Therefore, PNL has the meaning of a
propagation constant in such a waveguide and is determined from the boundary
conditions imposed on the electric field. Since n2 is only aperturbation of the
index of the linear waveguide, n2 = (no + ~nlopt)2 == n~ + 2n~nlopt, we will
suppose that it does not affect F, but it pro duces only a slight modification of the
propagation constant from its value ß if no nonlinearity is present. So
1.5 Solutions of Maxwell's Equations in Nonlinear Media 49
where
(1.70)
Thus, finally, the last equation in (1.68) can be rewritten as
If ß( w) is replaced by its Taylor series, and we neglect the terms of order
higher than two in this series, we arrive at
(1.72)
where
is the inverse of the group velocity of the electromagnetic pulse (ßI = I/v g) and
is responsable for the spatial dispersion of the pulse and is therefore called the
dispersion coefficient.
Equation (1.72) can be transformed into a differential equation in time for the
Fourier transform A(t) of G, defined as:
A( z, t) = f G(z, w - wo) exp(i( w - wo)t )dw.
The result is
oA -ß oA +~ß ~ A = i IAI2 A oz I ot 2 2 ot2 r ,
where
(1.73)
(1.74)
50 1. Basic Concepts of Optoelectronic Devices
y = (Linko&! 2) JIFI4 dA / JIFI2 dA A." A",
is the non linear coefficient. The dispersion and nonlinear coefficients which
appear in (1.74) depend on the width and the peak power of the electromagnetic
pulse, respectively. In order to compare their effects on the electromagnetic pulse
propagation, normalized time and amplitude coordinates are introduced, and
moreover, a system of reference is chosen which moves together with the pulse
such that t is replaced by T = t - z / v g = t - ß 1 z. The normalized form of (1.74) is
(1.75)
where r = T /1'0 with To the width of the pulse and U(z, r) = A(z, r) / Fo with
Po the peak power. The discussion of the effects of nonlinearity and dispersion on
the propagation of an electromagnetic pulse on a distance L can now be done in
terms of two characteristic lengths: LNL = 1/ yPo, the nonlinear length and
L D = 1(} /Iß21, the dispersion length. If
i) L« LNL , L« Lo , neither dispersion nor nonlinearity plays a role in the
propagation and the solution of (1.54) is U( L, r) = U( 0, r). The amplitude of the
pulse remains constant and the waveguide has only a passive role in the
transmission ofthe pulse. For y= 20 W-1km-1, IßzI = 20 pS2 / km, /l = l.55 11m
this regime occurs for large pulses 10 ~ 100 ps with small peak power Po :5:
0.1 mW
ii) L« LNL , L ~ Lo , the evolution of the pulse is govemed by dispersion.
Generally, the width of the pulse increases during propagation and its shape
changes. The only pulse wh ich does not change its shape during propagation
through a dispersive medium (at least when only the second term in the dispersion
relation is considered) is the Gaussian one. However, the width 10 of a chirped
Gaussian input pulse
U(O,T) = exp(-(l + iK)T2 /102 )
where K is a chirp constant, becomes after a propagation distance z equal to
For chirped Gaussian pulses it is possible that for a propagation length z < zmin = IKILo / 2( 1 + K 2 ) the width of the pulse decreases if ß2 K < O. For pure Gaussian
1.5 Solutions of Maxwell's Equations in Nonlinear Media 51
pulses with K = 0, the propagation in a dispersive medium always implies an
increase of its width. This situation is undesirable in applications, in particular in
signal transmission applications, since the pulse dispersion limits the information
speed. F or the same values of y, 1ß21 and A, as above and for Ta ~ 1 ps, this
dispersive propagation regime occurs for small optical powers Po «1 W.
iii) L« LD , L:::: LNL , the nonlinear effect dominates and the phenomenon of
self-phase modulation occurs. The solution of the nonlinear propagation equation
has in this case the form
u( z, T) = U( 0, T) exp( ilU( 0, TW Zeff ! LNL )
where Zeff is the effective propagation length. Zeff = Z for a nonabsorbing
medium and Zeff = (1 - exp( - az)) ! a if the absorption is taken into account,
where a is the absorption coefficient. This expression indicates that the shape of
the pulse, determined by IU(z, T)I, is constant during propagation, but the
spectrum of the pulse, defined as
S(m)=IU(z,m)12 = 4~2Ifu(z,T)exP(-imT)dTI2 (1.76)
where U(z,m) is the Fourier transform ofthe pulse, is drastically modified. For
example, the spectrum of an initial Gaussian pulse, itself a well-behaved, one
peaked Gaussian function, becomes multi-peaked at propagation, the number M of
peaks increasing linearly with zeff! LNL . This behavior is motivated by the fact
that at propagation new frequency components are continuously generated by the
nonlinear phase; these frequency components
are increasingly far away from the central frequency of the incident pulse. The
peaks in the pulse spectrum appear as a result of the constructive or destruetive
interference of the same frequency components whieh appear at different T values
in the pulse. In a Gaussian pulse for example, it is easy to show that the same
frequency component m is generated at two different, symmetrie T values in the
pulse, the number of peaks in the spectrum being given in this case by zeff! LNL =
(M - I! 2)lT. This self-phase modulation regime is eharacteristie for large pulses
(To > 100 ps) with large peak powers (Po:::: 1 W).
iv) L:::: LD , L:::: LNL , the dispersion and nonlinearity aet simultaneously and
they can eompensate one another under certain conditions. In this regime
52 I. Basic Concepts of Optoelectronic Devices
stationary solutions of (1. 7 5) can be found for the electromagnetic field
propagation. These solutions appear for weIl defmed light excitation conditions
and are called solitons. Their form is unchanged during propagation through the
non linear and dispersive waveguide, as optical modes in linear and nondispersive
waveguides (see Sect. 1.3). Therefore, solitons are modes for the nonlinear and
dispersive waveguide.
1.5.1 Optical Solitons
The stationary solution of (1.75), i.e. the solutions which depend on z at most
through a phase factor, are separable as U( r,z) = f( r)exp(i~(z)) with realfand ~ functions. By supposing that, analogously to the modes in linear, nondispersive
waveguides, ~ is proportional to z, i.e. ~ = Ta + ~o, the equation satisfied by f can
be put, after some algebraic calculations, in the following form:
(1.77)
where K} = 2Lo / sgn(~)LNL' K2 = 2KLo / sgn(ß2) and Ko is a constant
parameter.
If Ko = 0, fhas solutions only for negative values of ß2 (sgn(ß2) = -1), in
the anomalous dispersion regime. The solution is
(1.78)
and, correspondingly
u( r, z) = J2KLNL sech( J2KLo r) exp( iK z + i~o). (1.79)
Since from its definition the width ro = 1/ J2KLo ofthe pulse and the maximum
value of IU( r ,z )12 must be equal to 1, it follows that K = 1/ 2LNL , Lo / LNL = 1
and the propagation constant of the pulse is determined by LNL . From the three
pulse parameters, i.e. the amplitude, width and propagation constant, only one is
independent the others being determined by the parameters Lo and LNL . So,
u( r,z) = sech( r) exp(iz / 2LNL + i~o). (1.80)
1.5 Solutions ofMaxwell's Equations in Nonlinear Media 53
This solution of the electromagnetic field is called a bright soliton due to its form
(see Fig. 1.9) and has a phase independent of r, i.e. sgn( U) is constant with
respect to r(see Fig. 1.9).
IUI s (U)
0.5
t t
·4 ·2 2 4 ·4 ·2 o 2 4
Fig. 1.9. The variation ofthe pulse amplitude (left) and phase (right) of a bright
soliton as a function ofthe normalized time coordinate r
IUI gn(U)
-3 ·u 3
t
-3 -1.5 15 3
Fig. 1.10. The variation of the pulse amplitude (left) and phase (right) of a dark
soliton as a function ofthe normalized time coordinate r
If Ko *- 0, a solution for f can be found only if sgn(ß2) = +1 (normal
dispersion region) and has the form
f( r) = ~KLNL tanh( ~KLo r), (1.81 )
with the normalized complete solution far U
U( T,Z) = tanh( T) exp( iz / LNL + i~o), (1.82)
where K = 1/ LNL from the amplitude normalization condition and Lo / LNL = 1
from the pulse width normalization condition. The form of the pulse is given in
54 1. Basic Concepts of Optoelectronic Devices
Fig. 1.10; its phase has a jump at r = ° since, unlike the solution for the bright
soliton, U( r,z) for a dark one is an odd function of r. Dark solitons are harder to
realize experimentally since it is difficult to realize the constant infmite
"background" .
The bright and dark solitons are fundamental solitons, since for them the
dispersion and nonlinear effects exactly compensate each other, i.e. for them
Lo / Lm. = 1. For Lo / LNL *" 1 the dispersion and nonlinearity are alternatively
dominant and the evolution of an incident soliton has a periodic behavior with z -
these are the higher order soliton solutions. The parameter N 2 = Lo / LNL
determines the order ofthe high er soliton. For example, for a bright N = 2 soliton,
an input pulse of the form U( 0, r) = Nsech( r) has a periodic behavior with
respect to z in a nonlinear and dispersive medium, given by (Agrawal 1989):
cosh( 3r) + 3 exp( 4i~) cosh( r) . U(~, r) = 4 exp(l~ 12),
cosh( 4r) + 4 cosh(2r) + 3 cos( 4~) (1.83)
where ~ = z / Lo . The evolution of the amplitude of a bright N = 2 order soliton
along a distance equal to ~ = 7r is shown in Fig. 1.11.
4
Fig. 1.11. The evolution of a bright N = 2 higher-order soliton
Although the higher-order solitons compress and broaden succesively due to
the alternate predominance of the non linear and dispersion effects, the initial form
of the pulse is recovered after aperiod of zp = nLo /2, for integer N values (see
Fig. 1.11). If N is not integer or if the initial pulse is not a soliton, only apart of
the incident power is recovered in the form of a soliton (fundamental or of higher
1.5 Solutions of Maxwell's Equations in Nonlinear Media 55
order) after the propagation through a distance of a few zp' The remaining part is
radiated.
N 2 = 1 is the condition for the creation of a fundamental soliton. This
condition implies that
(l.84)
i.e. there is a threshold power POlh = I~ 1/ rTr} for soliton generation which
depends on both the waveguide parameters, rand 1ß21, and on the pulse width 10. For an N-order soliton this threshold power increases N2 times.
1.5.2 Optical Solitons in Real Transmission Systems
The above derived stationary solutions of the Maxwell's equations in dispersive
and nonlinear media propagate, ideally, over theoretically infinite distances
without changing their shape. In real communication transmission systems
incident soliton pulses change their form and/or energy due to the effect of losses,
higher-order dispersion, Raman scattering, deviations from the ideal sech2 form of
the input soliton, nonuniformities (periodic or not) of the propagating medium, the
soliton self-frequency shift and so on. As a result, the maximum propagation
distance of real solitons is limited to about 50 km without repeater stations. The
exact contribution of the above mentioned effects is hard to estimate since this can
be done generally only by numerical calculations. One notable exception is the
effect of loss: the evolution of an incident fundamental bright soliton with
u( r,O) = sech( r) through a medium with an energy absorption coefficient a can
be described by:
u( r,z) = exp( - az)sech( exp( - az)r)exp( i(l- exp( - 2az)) I 4a). (l.85)
The soliton broadens due to the loss, without changing its form; this can result in
collisions/interactions between successively sent solitons. Two interacting solitons
can give rise to soliton collapse or not, depending on their relative phases and
amplitudes; information errors occur. The other mentioned effects contribute also
to a change of the pulse shape or even its wavelength. The self-frequency shift
effect for example, observed in long fibers in which pulses with an energy greater
than the threshold for the fundamental soliton are launched, consists of the split of
the pulse into a fundamental soliton and a nonsoliton part. The latter has its central
frequency approximately identical to that of the original pulse, but the soliton part
56 1. Basic Concepts of Optoelectronic Devices
has the central frequency shifted to lower values. This effect can be explained by
the Raman effect in optical tibers, the higher frequency components of the pulse
acting as a pump to provide Raman gain for the lower frequency components. In
long optical transmission systems where periodic amplitications are needed to
prevent soliton degradation, transmission instability may occur due to the
resonance of the soliton phase with the amplitication period. Such instabilities
occur when the ratio between the amplitication period and the soliton period is
approximately equal to 8.
1.5.3 Stretched Pulses
Stretched pulses have been recently shown to be more suitable than optical
solitons for propagation over long distances (> IOD km) in tibers with the same
amount of averaged dispersion and in conditions of weak tixed frequency
filtering. Stretched pulses are formed in nonlinear tibers with alternating normal
and anomalous dispersion regions; stable pulses can be formed with higher
energies than the solitons due to a reduced averaged self-phase modulation. The
pulses are called stretched since during the propagation through the positive and
negative dispersion tibers the pulse widths have alternate maximum and minimum
values. The stretching factor, detined as the ratio between the maximum and
minimum pulse widths, can have values greater than 20. The stretching and
compressing effects are linear and reversible. Unlike solitons, stretched pulses that
are not in a steady state condition suffer oscillations in the pulse parameters with a
period determined by the average dispersion; these oscillations can be damped by
tiltering. The higher energy of the stretched pulses make the effect of noise less
important and the presence of both dispersion types leads to no pulse collapse
during the interaction of two stretched pulses if the dispersion has sm all deviations
with respect to its average value (Matsumoto and Haus 1997). The form of the
stretched pulses can be well approximated with a Gaussian function:
K (T2 1) f(T) = ~exp 21;} 1- i{b (1.86)
with three parameters: height K, width 10 and chirp {b. When the pulse is
adiabatically perturbed such that the chirp parameter is approximately constant,
the height and width change so as to leave invariant the product of the peak
intensity and the pulsewidth to the fourth power (Yu et al. 1997).
1.6 Materials 57
1.6 Materials
There are two categories of materials used in advanced optoelectronic devices:
glasses for fiber devices and semiconductor compounds for integrated opto
electronic devices.
1.6.1 Glasses
The glass technologies (chemical vapor or flame hydro lysis deposition on a
substrate) refer mainly to Si02 pure or doped materials. Si02 is doped with P or
Ge in thc core region in order to increase its retractive index and is doped with B
in the cladding region to decrease the Si02 refractive index.
The quantity L1 = (n;o - n;,) /2n;o reflecting the difference between ncl and
neo ranges from 0.003 < L1 < 0.01 for single mode fibers to 0.01 < L1 < 0.03 for
multimode fibers (neo = 1.461). The corresponding core radius ranges between
2 11m < d< 5 11m for single mode fibers and between 12.5 11m < d< 100 11m for
multimode fibers.
The fibers usually operate with low losses « 0.4 dBIKm) between 0.8 11m < A
< l.6 11m. At 1.3 11m the los ses have a quite low value « 0.2 dB/Km) and the
dispersion coefficient is approximately zero making the fiber useful for
information transmission. The minimum loss value is attained at 1.55 11m - the
other wavelength of interest in applications. But at A = 1.55 f..lm the dispersion
coefficient is not zero and an equalizer is necessary to compensate the dispersion
effects. This can be done by realizing a sinusoidal refractive index profile inside
the core (a fiber Bragg grating). In practice, this Bragg grating is made by
illuminating the fiber core with a stationary UV laser beam.
Active fibers are obtained by doping the core with different rare earth
materials, depending on the operating wavelength. At A = 1.3 11m the Nd3+ ions
are mostly used to fabricate fibers with net gain coefficients while at A = 1.55 f..lm
the Er 3+ ions realize the same task. These dopants produce a gain of up to
O. I dB/cm. In glasses, the index of refraction has a non linear behavior with the
light intensity due to a nonharmonie motion ofthe bound electrons.
Since Si02 has no symmetry inversion this nonlinearity can be described by a
Kerr-like dependence with I1n = 3.2.10-16 cm2 / w.
58 I. Basic Concepts of Optoelectronic Devices
1.6.2 Semiconductors
In advanced optoelectronics, semiconductor heterostructures such as GaAsl
Ga1_xAlxAs and Inl_xGaxAsyPl_y IInP playa central role. These are band
engineered structures because their parameters such as Eg , n, the effective masses
of electron and holes me and mh' etc. are controlled through the alloy
composition x and y. In this way, the operating wavelength A [J..Lm] = 1.241 Eg (e V)
as weil as other characteristics such as the absorption coefficient can be tuned by
modifying the composition.
There are two types of heterostructures depending on the band structure of the
semiconductors, as displayed in Fig. 1.12 (Esaki 1986).
type I a
type II staggered b
type II misaligned e
Fig. 1.12. Band energy diagrams for different types ofheterostructures (a) type
I, (b) type II staggered, and (e) type II misaligned
In type I heterostructures the motion of the electrons in the conduction band
and of the holes in the valence band can be considered as independent. The
semiconductor with the smaller Eg plays the role of a weil for both electrons and
holes, as can be observed from Fig. 1.12a; the semiconductor with the higher Eg
1.6 Materials 59
is then a baITier for both electron and hole motions. In type 11 heterostructures the
motions of electrons and holes are coupled. In Figs. 1.12b and 1.12c the
semiconductor with the energy gap Eg2 plays the role of a weil for electrons,
while that with energy gap Eg1 plays the role of a weil for holes. Examples of
type I heterostructures are GaAsl AIAs, GaSbl AISb, GaAs/GaP systems; type 11
heterostructures are InAs/GaSb, InAs1_xGaAsx I GaSb1_yGaAsy etc.
Some important parameters of the semiconductor materials used in advanced
optoelectronic devices are given in Table 1.1 (Adachi 1985; Silver and O'Reilly
1995; Yeh 1988; Yang and Xu 1992a). These parameters are very sensitive to the
temperature and in general depend on the experimental conditions under which
they are determined; in particular the refractive index n is also sensitive to the
wavelength of the incident light. The values given in Table 1.1 must therefore be
taken as values given for illustrative purposes only. Slightly different values can
also be found in the literature. Both the electron and hole masses in Table 1.1 are
normalized to the mass of the free electron, mo. The effective mass of holes in
Table 1.1 is actually a weighted sum ofthe light and heavy hole effective masses.
Table 1.1. Parameters of semiconductor materials
Material Eg(eV) A(llm) me /mo mh /mo n
GaAs 1.424 0.8 0.067 0.087 3.6 AIAs 2.168 0.8 0.15 0.15 2.97
AlxGa1_xAs 1.424 + l.247x 0.8 0.067 + 0.087 + 3.6 -(x< 0.45) 0.083x 0.063x 0.63x 1.9 + 0.125x + 0.143x2
(x> 0.45)
AISb 2.22 0.3 0.146 3.31 InAs 0.36 0.0185 0.0255 3.63 InP 1.35 0.08 0.12 3.327 InSb 0.16 1 0.013 4.27 GaP 2.74 0.8 0.17 0.04 3.27
GaSb 0.68 3.87
The semiconductors used in advanced optoelectronic devices also have
nonlinear properties. These properties are due to several physical mechanisms.
Among them we mention the following:
i) the nonharmonic motion ofbound electrons,
ii) confinement effects in MQW which enhance the exciton absorption,
iii) the Stark effect due to energy level shifts of quantum confined electrons
and holes in the presence of an applied field,
60 I. Basic Concepts of Optoelectronic Devices
iv) the photorefractive effect in which the refractive index is spatially varied
due to nonunifonnities in the electric tield detennined by charge separation in the
carrier transport,
v) band tilling due to the excitation of carriers near the conduction band edge.
Some of these mechanisms can be simultaneously present in a device. A
comparison of these mechanisms for GaAs/GaAlAs heterostructures is given in
Table 1.2 (Gannire et al. 1989). By careful design the nonlinearities due to carrier
transport (iv) can be made much larger than those due to other nonlinear
mechanisms. This is the case for example of a nipi structure.
Table 1.2. Comparison ofthe strength of different nonlinear mechanisms
Mechanism
Exciton (75 A)
Bandtilling
nipi MQWnipi
Iln (cm2/W) 4.10 5
1.10-5
0.0125
13
The nipi structure is fonned by altemating p and n-doped regions separated by
isolating layers. In a nipi structure at each interface charge separation occurs in
the depletion region and therefore, in it, the nonlinear mechanism (iv) dominates.
MQW nipi are altemating p and n regions separated by isolating regions made by
MQWs. In this last case the nonlinear mechanisms (iii) and (v) concur.
From Table 1.2 it is obvious that the nonlinear coefficients of semiconductor
materials are several orders ofmagnitude higher than in Si02 (3.2 .10-16 cm2/W).
However, since the diameter of the optical tibers is generally smaller than that of
integrated semiconductor waveguides and since the propagation length of the
electromagnetic tield in tibers is generally several orders of magnitude larger, the
overall nonlinear effect in optical tibers is comparable with and sometimes larger
than in integrated semiconductor waveguides.