CJ3402 N-Channel MOSFET

DESCRIPTION

The CJ3402 uses advanced trench technology to provide excellent

RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for use as a load switch or in PWM application.

FEATURES Lead free product is acquiredSurface mount package

APPLICATION Load Switch and in PWM applications

MARKING

Maximum ratings (Ta=25 unless otherwise noted)

Parameter Symbol V alue UnitDrain-Source Voltage VDS 30 V

Gate-Source Voltage VGS ±12 V

Continuous Drain Current ID 4 A

Pulsed Drain Current (note 1) DM I 15 A

Power Dissipation PD 0.35 W

Thermal Resistance from Junction to Ambient (note 2) θJAR 357 /W Operation Junction and Storage Temperature Range TJ,TSTG -55~+150

SO

T-23

1. GATE

2. SOURCE

3. DRAIN

V(BR)DSS RDS(on)MAX ID

30V

55 mΩ@10V

4A 70 mΩ@4.5V

110mΩ@2.5V

Equivalent Circuit

12

3

JIANGSU CHANGJING ELECTRONJIANGSU CHANGJING ELECTRONICS TECHNOLOGYICS TECHNOLOGY CO., L CO., LTTDD

SOTSOT-23 Plastic-Encap-23 Plastic-Encapsulate sulate MOSFETSMOSFETS

1www.jscj-elec.com Rev. - 2.1

R2 R2

R2=Device codeSolid dot = Green molding compound device,if none, the normal device

MOSFET ELECTRICAL CHARACTERISTICS

aT =25 unless otherwise specified

Parameter Symbol Test Condition Min Typ Max Unit

STATIC CHARACTERISTICS

Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 30 V

Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 µA

Gate-body leakage current IGSS VGS =±12V, VDS = 0V 100 nA

Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.6 0.85 1.4 V

VGS =10V, ID =4A 33 55 mΩ

VGS =4.5V, ID =3A 39 70 mΩDrain-source on-resistance (note 3) RDS(on)

VGS =2.5V, ID =2A 48 110 mΩ

Forward transconductance (note 3) gFS VDS =15V, ID =4A 8 S

Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 1 V

DYNAMIC CHARACTERISTICS (note 4)

Input capacitance Ciss 390 pF

Output capacitance Coss 54.5 pF

Reverse transfer capacitance Crss

VDS =15V,VGS =0V,f =1MHz

41 pF

Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3 Ω

SWITCHING CHARACTERISTICS (note 4)

Turn-on delay time td(on) 3.3 ns

Turn-on rise time tr 1 ns

Turn-off delay time td(off) 21.7 ns

Turn-off fall time tf

VGS=10V,VDS=15V,

RL=3.75Ω,RGEN=6Ω

2.1 ns

Total gate charge Qg 4.34 nC

Gate-source Charge Qgs 0.6 nC

Gate-drain Charge Qgd

VDS =15V,VGS =4.5V,ID =4A

1.38 nC

Body diode reverse recovery time t. 1.2 ns

Body diode reverse recovery charge Qrr IF=4A,dI/dt=100A/µs

6.3 nC

Notes :1. Repetitive rating : Pulse width limited by junction temperature.

2. Surface mounted on FR4 board , t≤10s.

3. Pulse Test : Pulse Width≤80µs, Duty Cycle≤0.5%.

4. Guaranteed by design, not subject to producting.

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Typical Characteristics

0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

2

4

6

8

10

12

14

16

0 1 2 3 4 5 6 7 8 9 100

20

40

60

80

100

120

140

160

180

200

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

25 50 75 100 1250.2

0.4

0.6

0.8

1.0

1.2

Ta=100

VSDIS ——

T=25

SOU

RC

E C

UR

REN

T

I S (A

)

SOURCE TO DRAIN VOLTAGE VSD (V)

VGS=3V,4V,5V,10V

VGS=2V

Output Characteristics

VGS=1.5V

D

RAI

N C

UR

REN

T

I D

(A)

DRAIN TO SOURCE VOLTAGE VDS (V)

Ta=100

Ta=25

O

N-R

ESIS

TAN

CE

R

DS(

ON

) (m

)

GATE TO SOURCE VOLTAGE VGS (V)

VGS——RDS(ON)

ID=4A

VDS=3V

DR

AIN

CU

RR

ENT

I D

(A

)

GATE TO SOURCE VOLTAGE VGS (V)

Transfer Characteristics

Ta=100

Ta=25

ID=250uA

Threshold Voltage

THR

ESH

OLD

VO

LTAG

E

V TH

(V)

JUNCTION TEMPERATURE Tj ( )

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.025

30

35

40

45

50

55

VGS=2.5V

VGS=4.5V

VGS=10V

Ta=25Pulsed

ON

-RES

ISTA

NC

E

RD

S(O

N)

(m

)

DRAIN CURRENT ID (A)

ID——RDS(ON)

3www.jscj-elec.com Rev. - 2.1

Min Max Min MaxA 0.900 1.150 0.035 0.045

A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100ee1 1.800 2.000 0.071 0.079LL1 0.300 0.500 0.012 0.020θ 0° 8° 0° 8°

0.550 REF 0.022 REF

Symbol Dimensions In InchesDimensions In Millimeters

0.950 TYP 0.037 TYP

SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

4www.jscj-elec.com Rev. - 2.1

NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

SOT-23 Tape and Reel

SOT-23 Tape and reel

REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg)

3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220

SOT-23 Embossed Carrier Tape

SOT-23 Tape Leader and Trailer

Pkg type

SOT-23

Dimensions are in millimeter

A B C d E F P0 P P1 W3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00

Reel Option

7''Dia

Dimensions are in millimeter

D D1 D2 G H I W1 W2Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30

Packaging Description: SOT-23 parts are shipped in tape. The carrier

tape is made from a dissipative (carbon filled)polycarbonate resin. The cover tape is a multilayerfilm (Heat Activated Adhesive in nature) primarilycomposed of polyester film, adhesive layer, sealant,and anti-static sprayed agent. These reeled parts instandard option are shipped with 3,000 units per 7"or 17.8cm diameter reel. The reels are clear in colorand is made of polystyrene plastic (anti-staticcoated).

P1P0

P

FW

E

Ad

A

A

Trailer Tape Leader Tape50±2 Empty Pockets 100±2 Empty PocketsComponents

B

C

A-A

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1000

500

2000

1500

2500

3000

G

H

W1

W2

D1

I

DSOT-23 Reel

D2