skku. inorganic materials lab

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Skku. Inorganic materials lab. Skku. Inorganic materials lab. Highly Ordered Deposition of Highly Ordered Deposition of MgA MgA l-CO l-CO 3 3 Layered Double Hydroxides Layered Double Hydroxides on Si(100) Surface by Solvotherm on Si(100) Surface by Solvotherm al al Treatment Treatment 이이이 , 이이이 , 이이이 , 이이이 * 이이이이이이

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Highly Ordered Deposition of MgAl-CO 3 Layered Double Hydroxides on Si(100) Surface by Solvothermal Treatment. 이종현 , 이석우 , 송여진 , 정덕영* 성균관대학교. Skku. Inorganic materials lab. Abstract. - PowerPoint PPT Presentation

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Page 1: Skku. Inorganic materials lab

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Highly Ordered Deposition ofHighly Ordered Deposition of MgAl-CO MgAl-CO33 Layer Layer

ed Double Hydroxides on Si(100) Surface by ed Double Hydroxides on Si(100) Surface by

SolvothermalSolvothermal TreatmentTreatment

이종현 , 이석우 , 송여진 , 정덕영 *

성균관대학교

Page 2: Skku. Inorganic materials lab

Abstract

Synthetic MgAl-CO3 layered double hydroxides(LDHs) are inorganic layer-structured materials having homogeneous chemical composition and sub-micron size. They crystallize in a hexagonal systems with structural anisotropy. SEM and AFM images of the film showed that LDHs particles were deposited on Si(100) with high order by solvothermal treatment in toluene.

The surface coverage on Si(100) of LDHs particles increases as the positive charge of layer decreases. The X-ray diffraction spectra of the MgAl-CO3 LDHs deposited on Si(100) showed only the sharp and intense (00l) reflections, suggesting that the LDHs layers are parallel to the plane of Si(100). This work is an important evidence for the direct chemical reaction between Si(100) surface and LDHs particles.

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Page 3: Skku. Inorganic materials lab

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

OH

OH

OH

OH

CO32-, nH2O

M(II), M(III)

M(II), M(III)

• General formula of synthetic LDH

M(II)1-xM(III)x(OH)2(Am-)x/mnH2O

M(II) = Mg, Ni, Zn

M(III) = Al, Cr, Fe

Am- = exchangeable anion.

0.2 ≤ x ≤ 0.4

1/m ≤ Am-/M(III) ≤ 1

• Schematic structure

Layered Double Hydroxide (LDH)

Page 4: Skku. Inorganic materials lab

Micropatterning of LDH nanoparticles

Toluene Reflux(140C , 4hr)

Microcontact printing (OTS)

Coating (CP-TMS)

Ultra Sonication(30~60s)

Cl Cl Cl

o o o

CP-TMSglass

LDH

Si Si Si Si

Si Si Si Si Si Si Si

Si

o o o o o oo o o o

o o o o o o o o oo o o o o o

o o oSi Si

OH OH OH

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Page 5: Skku. Inorganic materials lab

Hydrothermal Treatment of LDH particles

Hydrothermal (140C ,

5hr)

A

B

A

B

AES(Auger Electron Spectrum)

OTS region (base resist) Etching

hydrothermal (180C ,

5hr)

AB Si(100)

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Page 6: Skku. Inorganic materials lab

Experimental section (solvothermal

treatment) 1. Wafer cleaning 2. Toluene solvothermal reaction (140C, 4hr)3. Ultra Sonication 5~10min4. Dry

Substrate N-type Si(100) :2E14 atoms/cm3 (dopant : phosphorus)

P-type Si(100) :1E15 atoms/cm3 (dopant : boron)

Toluene

LDH particles

Mg:Al=2:1

500nm

[Mg4Al2(OH)12]CO34H2O

Mg:Al=3:1

500nm

[Mg6Al2(OH)16]CO34H2

O

Mg:Al=4:1

500nm

[Mg8Al2(OH)20]CO34H

2O

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Page 7: Skku. Inorganic materials lab

10 20 30 40 50 60 70 80

0

5000

10000

15000

20000

(0015)

(0018)

Si(400)

(006)

(009)

(0012)

(003)

I(CPS)

2theta

Solvothermal Treatment

2m

500nm

p-type Si(100)

n-type Si(100)

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

2m

500nm

SEM image

X-RAY diffraction (film) [Mg4Al2(OH)12]CO34H2

O

Page 8: Skku. Inorganic materials lab

X-RAY diffraction (powder & film)

(a) powder(b) film : substrate :n-type Si(100) (c) film : substrate :p-type Si(100)* : (00 l ) diffraction

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

Mg:Al

(003) (006) (009)

2:1 7.66Å 3.81Å 2.54Å

3:1 7.82Å 3.91Å 2.61Å

4:1 7.92Å 3.96Å 2.64Å

Page 9: Skku. Inorganic materials lab

Increase of surface coverage (SEM & AFM)

2m2m 1m

Mg:Al=2:1 Mg:Al=3:1 Mg:Al=4:1

Increase of Surface Coverage

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

AFM image

SEM image

Page 10: Skku. Inorganic materials lab

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

A trend as temperature

AFM image

140C

150C 10 20 30 40 50 60 70 80

1300C

1500C

1400C

Si(400)

Si(200)

(0018)

(0012)(009)

(006)

(003)

intensity

2theta

X-RAY diffraction (film) [Mg4Al2(OH)12]CO34H2

O

Page 11: Skku. Inorganic materials lab

Hydrothermal after solvothermal

[Mg4Al2(OH)12]CO34H2

O

수열

100C 5hr

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

2m

500nm

solvothermal

hydrothermal

2m

500nm

Increase of Surface Coverage

Page 12: Skku. Inorganic materials lab

Conclusion

Skku. Inorganic materials lab.Skku. Inorganic materials lab.

We have seen that it was possible for MgAl-CO3 LDHs-nano size particles to be deposited on Si(100) without intermediates and to be micro-patterned on the CP-TMS region prepared by cp. LDHs particles were deposited on Si(100) at unique temperature( 140C ) by solvothermal treatment in toluene.

SEM and AFM images of the film showed that LDHs particles were deposited on Si(100) with high order by solvothermal treatment in toluene. The surface coverage on Si(100) of LDHs particles increases as the positive charge of layer decreases. This work is an important evidence for the direct chemical reaction between Si(100) surface and LDHs particles.

AcknowledgementWe acknowledge support by the Korean Science and Engineering Foundation through Grant R02-2000-00065.