sic for your military, aerospace, and down-hole applications · 2017. 5. 10. · sic device...

Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com

April 2015 Rev 2.0

SiC for your Military, Aerospace, and Down-Hole Applications• Extreme Performance

� Operation Beyond Mil Temp

� Elevated Temp Range , -55°C to +210°C

� Naturally Radiation Tolerant

• More efficient than Silicon, GaAs

� Lower Conduction and Switching Loss

� Faster Switching Frequencies

� Higher Thermal Performance

• Screened in accordance with MIL-PRF-19500

• Metal / Ceramic Hermetic Packaging

� Through hole & surface mount options

� Smaller surface mount diode in development

� Custom packaging on request

Silicon Carbide (SiC)Product Selector Guide

SiC Schottky Diodes

� 600 & 1200V Blocking Voltage � 3 to 15 Amps IF

� Zero Reverse & Zero Forward Recovery � High Frequency Operation � High Speed Low Loss Switching

SiC FET’s & Transistors

� 1200V Breakdown Voltages � Low On Resistance, 40mΩ to 180 mΩ typical at 25O C � Switching Times in ns � No Tail Current � Low Gate Charge � Positive Temp Coefficient

Down-Hole Compressor

Satellite Solar Inverters

Jet Engine Controls

MIL-SPEC Power Supplies

Applications


April 2015 Rev 2.0

Single SiC Power Schottky Diode

Part Number Voltage Absolute MaxCurrent

PackageStyle

BeO Free

TemperatureElevated / Extreme

MYXDS0600-03AAS 600V 3ATO-257 Flat LID

Yes 210°C

MYXDS0600-05AAS 600V 5A

MYXDS0600-10AAS 600V 10A

MYXDS1200-03ABS 1200V 3A

TO-257 Domed LID




MYXDS0600-03DA0 600V 3A SMD 0.5

MYXDS0600-05DA0 600V 5A

MYXDS0600-10DA0 600V 10A

Silicon Carbide (SiC) Schottky Diodes

TO-258 5PIN

TO-257 Domed LID 2 Pin TO-257 Domed LID SMD 0.5

• High Current

• High Voltage

• High Temperature

• High Reliability

• Small Outline

• Ceramic and Metal

• BeO Free Options

• HMP solder SiC Power Schottky Rectifier / Diode Bridge

Part Number AC Inputs Voltage Absolute MaxCurrent

PackageStyle

BeO Free


MYXDB0600-10CEN Dual Phase 600V 10A

TO-2585 PIN Yes 210°C

MYXDB0650-10CEN Dual Phase 650V 10A

MYXD30600-10CEN Three Phase 600V 10A

MYXD30650-10CEN Three Phase 650V 10A

TO-257 Flat LID


April 2015 Rev 2.0

Single SiC Power MOSFETs


PackageStyle BeO Free


MYXMN0600-20DA0 600V 20A SMD 0.5 Yes 210°C

MYXMN1200-20CAB 1200V 20A TO-258 No 210°CMYXMN1200-40CAB 1200V 40A

Silicon Carbide (SiC) Transistors & MOSFETs

• Low RDS(on)

• High Current

• High Voltage

• High Temperature

• High Reliability

• Ceramic and Metal

• BeO Free Options

• HMP solder

SiC Power Transistors Dual & Half Bridges

Part Number Device Type Voltage Absolute MaxCurrent



MYXMH0600-20CEN MOSFET Half Bridge 600V 2 x 20A TO-258

5 pin Yes 210°C

MYXM21200-20GAB MOSFET Double 1200V 2 x 20A TO-259 No 210°C

MYXB21200-20GAB JFET Double 1200V 2 x 20A TO-259 No 175°C

TO-259

TO-258 5 pin

TO-258 TO-254 SMD 0.5

Single SiC Power JFETs




MYXJ11000-17DA0 1000V 17A SMD 0.5 Yes 175°C

MYXJ11200-17ABB 1200V 17A TO-257 Domed

No 175°CMYXJ11200-17BAB 1200V 17A TO-254

MYXJ11200-17CAB 1200V 17A TO-258

MYXJ11200-34CAB 1200V 34A

Single SiC Super Junction Transistors




MYXS00600-15DA0 600V 15A

SMD 0.5 Yes 210°CMYXS00600-07DA0 600V 7A

MYXS00650-15DA0 650V 15A

TO-257 Domed Lid


April 2015 Rev 2.0

Part Numbering Rules for SiC Devices

Prefix

Code Description

MYX Micross

Device Type

Code Device Type

DS Diode Schottky

DB Diode 2 Phase Bridge

D3 Diode 3 Phase Bridge

J1 JFET Normally On

J0 JFET Normally Off

MN MOSFET N Channel

MP MOSFET P Channel

M2 MOSFET 2 Die N Type

MH MOSFET Half Bridge

BN BJT N Channel

BP BJT P Channel

B2 BJT 2 Die P Type

S0 SJT Normally Off

S1 SJT Normally On

Package

Code Plating Pins Body Eyelet Lid

AA Ni 3 TO-257 Ceramic Flat

AB Ni 3 TO-257 Ceramic Domed

AC Ni 2 TO-257 Ceramic Domed

BA Ni 3 TO-254 Ceramic Flat

CA Ni 3 TO-258 Ceramic Flat

CE Ni 5 TO-258 Ceramic Flat

DA Ni 3 SMD 0.5 - Flat

EA Ni 3 SMD 1 - Flat

FA Ni 3 SMD 2 - Flat

GA Ni 6 TO-259 Ceramic Flat

Isolating Material

Code Description

0 None

B BeO

S BeO free

MYXDS1200-15ABS

Voltage* Package

Device Type Current* Isolating Material

Prefix

SiC Device Nomenclature

Sample Part Number

For more information regarding our products and services, please visit www.micross.com or call +44 (0) 1603788967.

* Current values are in Amps and voltage in Volts. * Current values are rated as Absolute Max values.* Character “-” used to separate numberical values.* Character “P” to indicate decimal point.

sic for your military, aerospace, and down-hole applications · 2017. 5. 10. · sic device...

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