Top results
performance of gan-based light-emitting diodes fabricated using gan epilayers grown on silicon substrates ray-hua horng,1,4* bing-rui wu,1,2 ching-ho tien,2 sin-liang ou,2…
performance of gan-based light-emitting diodes fabricated using gan epilayers grown on silicon substrates ray-hua horng,1,4* bing-rui wu,1,2 ching-ho tien,2 sin-liang ou,2…
by submitted to the graduate faculty of texas tech university in partial fulfillment of the requirements for the degree of master of science august, 2000 acknowledgements
the pennsylvania state universitypassivation of ingan/gan nanopillar light emitting diodes august 2013 the thesis of won hyuck choi was reviewed and approved* by the following:
received 11 may 2020 revised 20 july 2020 accepted 22 july 2020 date of publication 4 august 2020 date of current version 14 august 2020 the review of this article was arranged…
quantum efficiency enhancement for gan based light-emitting diodes and vertical cavity surface-emitting laserstheses and dissertations graduate school 2014 emitting diodes
beyond conventional c-plane gan-based light emitting diodes: a systematic exploration of leds on semi-polar orientationstheses and dissertations graduate school 2016 follow
review of recent progress on vertical gan-based pn diodesnano review review of recent progress on vertical gan-based pn diodes taofei pu1,2, usman younis1, hsienchin
gan-based light-emitting diodes with grapheneindium tin oxide transparent layer wei-chih lai14* chih-nan lin1 yi-chun lai2 peichen yu2 gou chung chi2 and shoou-jinn chang34…
nano res 1 graphene-gan schottky diodes seongjun kim1, tae hoon seo2, eun-kyung suh1, keun man song3, myung jong kim2, and hyunsoo kim1 nano res., just accepted manuscript…
dynamics of modification of nin-gan schottky barrier diodes irradiated at low temperature by 200mev ag14+ ions ashish kumar, tanuj kumar, a. hähnel, d. kanjilal, and r.…
n-polar ganaln resonant tunneling diodes cite as: appl. phys. lett. 117, 143501 2020 doi: 10.10635.0022143 submitted: 17 july 2020 . accepted: 22 september 2020 . published…
234 nm and 246 nm aln-delta-gan quantum well deep ultraviolet light-emitting diodes cheng liu1a yu kee ooi1 s m islam2 huili grace xing234 debdeep jena23 and jing zhang15b…
ieee electron device letters vol 41 no 1 january 2020 127 high voltage vertical gan p-n diodes with hydrogen-plasma based guard rings houqiang fu kai fu shanthan r alugubelli…
physics and simulation of optoelectronic devices viii ed r binder p blood m osinski spie proc 3944 2000 simulation and optimization of 420 nm ingangan laser diodes joachim…
advantages of the blue ingangan light-emitting diodes with an alganganalgan quantum well structured electron blocking layer zhen gang ju† wei liu† zi-hui zhang† swee…
quantum efficiency enhancement for gan based light-emitting diodes and vertical cavity surface-emitting laserstheses and dissertations graduate school 2014 emitting diodes
sede amministrativa: università degli studi di padova dipartimento di ingegneria dell’informazione scuola di dottorato di ricerca in ingegneria dell’informazione
thesis by hsien-yu liao for the degree of thuwal, kingdom of saudi arabia may 2015 examination committee approval the thesis of hsien-yu liao entitled “fabrication
study of gan light-emitting diodes fabricated by laser lift-off technique chen-fu chu fang-i lai jung-tang chu chang-chin yu chia-feng lin hao-chung kuo and s c wang citation:…