sandu titus poster titus sandu seminar 18 mai 2011

1
-a editie a narului National de nanostiinta si nanotehnologie 18 mai 2011 Biblioteca Academiei Romane Tight-binding (TB) methods: •Empirical Tight- binding (ETB) •Ab-initio Tight- Binding Capability to render the atomistic nature of phenomena. ETB - describes the electronic structure of complex systems like interfaces, defects in crystals, amorphous materials, nano-clusters, and quantum dots (3 orders of magnitude faster than ab-initio DFT][C. Delerue et al., phys.stat.sol. (b) 227, 115 (2001)]. The parameter-free DFT-TB-LMTO (tight-binding-linear muffin-tin orbitals) method has become more widely used not only for crystals, but also for low-dimensional systems like layered structures [I. Turek et al., Electronic Structure of Disordered Alloy, Surfaces, and Interfaces, Kluwer Academic Publishers 1997]. ETB assumes:(1) an orthogonal basis of states localized around atomic sites; (2) diagonal coordinate operator in this basis (gauge-invariance). Overlap and optical matrix elements : Phys. Rev. B.72, 125105 (2005) P P E f f E H k k k * 0 0 1 1 0 0 k k k * f s f s S 2 cos 2 3 2 3 a k e e f x a ik a ik y y k k k k w s w E E p 0 0 1 0 0 k 2 2 0 k p k k 2 1 k p w m im u H u Es s w 2D Graphene The tight-binding description of highly mismatched semiconductor alloys •The developments[i ] in the growth of Si lattice-matched BeSe0.41Te0.59 a new class of Si based devices. •The gap in size and orbital energies between Se/ Te and large lattice mismatch between BeTe/ BeSe makes the virtual-crystal approximation inappropriate. •The band anti-crossing (BAC) model has been introduced in order to explain the electronic structure of highly mismatched alloys like ZnSexTe1-x.[ii] [i] Clark, K. et al., J. Appl. Phys. 88, 7201 (2000); Kirk, W. P. et al., Supperlatt. Microstruct. 28, 377 (2000). [ii] Walukiewicz, W. et al., Phys. Rev. Lett. 85, 1552 (2000); Wu, J. et al., Phys. Rev. B 68,033206 (2003). Application to sp3s* TB Hamiltonian PRB, Application to sp3s* TB Hamiltonian PRB, 72 073204, 2005. 72 073204, 2005. Perturbed GF due to impurity by averaging over impurity configurations. d d ikd ik ii kk z V x z G 2 1 1 •The model is directly applied to sp 3 s* Hamiltonian[+] with spin- orbit interaction.[++] •The TB Hamiltonian is written in the sp 3 hybrid basis and the basis is rotated in such a way that a unit cell is formed by the anion hybrid orbitals and the cation hybrid orbitals pointed toward the anion site. •The s* orbitals remain unchanged. [+] Vogl, P. Hjalmarson, H. P. and Dow,J. D. J. Phys. Chem. Solids 44, 365 (1983). [++] Chadi, D. J. Phys. Rev. B 16, 790 (1977). Real-Space LMTO Method for Large Systems round state theory (LDA, etc); HFA not that good for solids. ge-correlation potentials and quasiparticle energies in the GWA ened Exchange: 1-particle GF and screened Coulomb interaction icting bandgaps (PRL 93 126406 2004) . Too demanding! imate methods in order to consider correlations- good for large (**Solid State Communications 150, 888; 2010). z P S z P z P z P z P z G 1 2 1 ' ' \ ' ' , ' ' , ' ' , l R l R Rl Rl l R Rl Rl l R Rl k S C k H Rl Rl Rl Rl Rl Rl C z C z z P TB-LMTO-ASA PRB 34, 5253, 1986 FAST CALCULATION of the Hamiltonian and GF permits the evaluation of the dielectric permittivity and the use of a dielectric scaling method to estimate the bandgap**. The bangap is improved with respect to DFT. Potential use for large systems! Spin polarization by spin dependent tunneling through an indirect E E V t E E V t V E V V E V t V E E t V E E H E R R L L 0 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 1 1 0 0 1 1 2 2 1 1 2 2 2 1 1 1 2 2 1 1 * * * * * * Phys. Rev. B. 73, 075313, 2006: TB PMC-Physics B, 1, 13, 2008: ab-initio Windows of large spin polarization due to Fane resonances in tunneling though an indirect barrier. Atomistic Description of Atomistic Description of Nanostructures Nanostructures Titus Sandu ([email protected]) Titus Sandu ([email protected]) National Institute for R&D in National Institute for R&D in Microtechnologies, Bucharest icrotechnologies, Bucharest

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Page 1: Sandu TITUS Poster Titus Sandu Seminar 18 mai 2011

A 10-a editie a Seminarului National de nanostiinta si nanotehnologie

18 mai 2011 Biblioteca Academiei Romane

Tight-binding (TB) methods:•Empirical Tight-binding (ETB)•Ab-initio Tight-Binding

Capability to render the atomistic nature of phenomena.

ETB - describes the electronic structure of complex systems like interfaces, defects in crystals, amorphous materials, nano-clusters, and quantum dots (3 orders of magnitude faster than ab-initio DFT][C. Delerue et al., phys.stat.sol. (b) 227, 115 (2001)].

The parameter-free DFT-TB-LMTO (tight-binding-linear muffin-tin orbitals) method has become more widely used not only for crystals, but also for low-dimensional systems like layered structures [I. Turek et al., Electronic Structure of Disordered Alloy, Surfaces, and Interfaces, Kluwer Academic Publishers 1997].

ETB assumes:(1) an orthogonal basis of states localized around atomic sites; (2) diagonal coordinate operator in this basis (gauge-invariance).

Overlap and optical matrix elements:

Phys. Rev. B.72, 125105 (2005)

P

P

Ef

fEH

k

kk *

0

0

1

1

0

0

k

kk *fs

fsS

2cos2

323 akeef xaikaik yyk

kk

kws

wEE p

0

0

1

0 0 k2 20

kp k k

2 1 kp

wm imu H u E s

s w

2D Graphene

The tight-binding description of highly mismatched semiconductor alloys

•The developments[i] in the growth of Si lattice-matched BeSe0.41Te0.59 a new class of Si based devices. •The gap in size and orbital energies between Se/ Te and large lattice mismatch between BeTe/ BeSe makes the virtual-crystal approximation inappropriate. •The band anti-crossing (BAC) model has been introduced in order to explain the electronic structure of highly mismatched alloys like ZnSexTe1-x.[ii] [i] Clark, K. et al., J. Appl. Phys. 88, 7201 (2000); Kirk, W. P. et al., Supperlatt. Microstruct. 28, 377 (2000).[ii] Walukiewicz, W. et al., Phys. Rev. Lett. 85, 1552 (2000); Wu, J. et al., Phys. Rev. B 68,033206 (2003).

Application to sp3s* TB Hamiltonian PRB, 72 073204, Application to sp3s* TB Hamiltonian PRB, 72 073204, 2005.2005.

Perturbed GF due to impurity by averaging over impurity configurations.

d d

ikdik

iikk

z

Vx

zG

2

1

1

•The model is directly applied to sp3s* Hamiltonian[+] with spin-orbit interaction.[++] •The TB Hamiltonian is written in the sp3 hybrid basis and the basis is rotated in such a way that a unit cell is formed by the anion hybrid orbitals and the cation hybrid orbitals pointed toward the anion site. •The s* orbitals remain unchanged. [+] Vogl, P. Hjalmarson, H. P. and Dow,J. D. J. Phys. Chem. Solids 44, 365 (1983).[++] Chadi, D. J. Phys. Rev. B 16, 790 (1977).

Real-Space LMTO Method for Large Systems

•DFT, ground state theory (LDA, etc); HFA not that good for solids.•Exchange-correlation potentials and quasiparticle energies in the GWA or Screened Exchange: 1-particle GF and screened Coulomb interaction in predicting bandgaps (PRL 93 126406 2004) . Too demanding!•Approximate methods in order to consider correlations- good for large systems (**Solid State Communications 150, 888; 2010).

zPSzPzPzP

zPzG

1

2

1

''\'','','', lRlRRlRllRRlRllRRl kSCkH

RlRlRlRl

RlRl Cz

CzzP

TB-LMTO-ASA PRB 34, 5253, 1986

FAST CALCULATION of the Hamiltonian and GF permits the evaluation of the dielectric permittivity and the use of a dielectric scaling method to estimate the bandgap**. The bangap is improved with respect to DFT. Potential use for large systems!

Spin polarization by spin dependent tunneling through an indirect barrier

EEVt

EEVt

VEV

VEV

tVEE

tVEE

HE

R

R

L

L

0001

0001

0000

0000

0001

0001

110011

22

11

222

111

22

11

*

*

**

**

Phys. Rev. B. 73, 075313, 2006: TB

PMC-Physics B, 1, 13, 2008: ab-initio

Windows of large spin polarization due to Fane resonances in tunneling though an indirect barrier.

Atomistic Description of NanostructuresAtomistic Description of NanostructuresTitus Sandu ([email protected])Titus Sandu ([email protected])

National Institute for R&D in National Institute for R&D in MMicrotechnologies, Bucharesticrotechnologies, Bucharest