r&d on csi(tl) + apd optimisation of the energy resolution m. gascón i.durán
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R&D on CsI(Tl) + APD
Optimisation of the energy resolution
M. Gascón
I.Durán
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R3B calorimeter
Total absorption efficiency 80 % (Eg=15 MeV lab) Very large crystals
Eg sum s(Esum)/<Esum> <10% (same as DE/E)
g Multiplicity s(Ng)/<Ng> < 10% Moliere Radius
DE/E for g 2-3 % Scintillation propertiesDetector granularity
DE/E for p (up to 300 MeV)Calorimeter for p
3 % Large crystalsDynamic range
Large dynamic range for detecting p,g
Inner radius 35 cm ( house Si trackers)
Main characteristics (from R3B Tech Proposal) :
R&D on crystals + readout systems
Design based on CAD + GEANT4 full simulations
see http://www.usc.es/~genp -> calorimeter -> reports and talks
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Calorimeter sectors
Demonstrator meeting, Madrid May-09
Due to the Lorentz boost we identify three sectors:
ECM = 10 MeV
β = 0.82
88
15
45130
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Crystals
!?
R3B/EXL meeting Milan Oct-06
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Crystals
M. Mozynski et al., NIM A 485(2002)504 (API LAAPD)
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CsI (Tl) 10x10x10, 10x10x50 ,10x10x100, 10x20x170 mm
CsI (pure) 10x10x10, 10x10x50 ,10x10x100 mm
LaCl3(Ce) 10x10x10, 10x10x50 ,10x10x100, 10x20x170 mm
Standard 10-stage, 19 mm tube, lima glass, Green bi-alkaliXP1901
Standard 10-stage, 19 mm tube, fused silica, UV bi-alkaliXP1918
Standard 10-stage, 25 mm tube, borosilicate glass, bi-alkaliXP3102
19 mm2 UV extended (200-1000 nm)S5345+ API
10x10 mmS86641010(PANDA)
5x5 mmS8665-55 (CMS)
St
Gob
ain
Pho
toni
sH
amam
atsu
R3B/EXL meeting Milan Oct-06
Material we used for test
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R&d on crystals and APDs
Crystals from StGobain (France) tested coupled to LAAPD from Hamamatsu (Japan) and API (USA)
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R3B/EXL meeting Milan Oct-06
Data-taking setups
Standard pulse-height analysis :
- preamplifiers: Canberra 2001A, Ortec R142
- Shapping amplifier: Canberra 2022
- Multichannel analyzer: Ortec Maestro or Amptek MCA-8000
Pulse-shape analysis :
- Oscilloscope Tektronix TDS3054B
- Off-line Digital filtering: Trapezoidal finite-impulse algorithm
Not used for APDs but providing the best results for PMT!
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Experimental setup
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Test at Genp-Lab (USC)
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Test at Genp-Lab (USC)
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APD gain vs. Bias Voltage
5 cm length
The energy resoltution depends on the APD gain and the Bias Voltage
~380V Dgain/DV= 2.84 %
The energy resoltution shows a minimum when The APD Bias Voltage=380
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Dependence on shapping time
For small crystals 4ms is a good compromise between energy-resolution and pile-up
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Dependence on the acquisition time
Best results achieved for acquisition times between 30-60 s
These curves conatin two effects: statistics and bias voltage drift.
Could be solved by controling Temperature and Bias Voltage
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Dependence on Amplifier Gain
Energy resolution improves by increasing the amplifier gain
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Best results
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Study of the non-uniformity
Energy resolution dependence on the first interaction point
Non-uniformity ~ 8.4 %, to compare with < 3% measured by St. Gobain
Light collection uniformity CMS CAL
P. Sempere PhD Thesis
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CsI(Tl) Resolution
R3B/EXL meeting Milan Oct-06
Energy resolution improves for increasing energy
CsI(Tl) with a 60Co source
(1171 keV) and (1332 keV)
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Some conclusions
• Several test (wrapping, optical coupling,amplifier gain, shapping time) have been performed to optimise the energy resolution of CsI(Tl)
•APDs from API showed the best energy resolution for CsI(Tl) crystals•APDs S8664-1010 from Hamamatsu showed a very good energy resolution almost independent on the crysal size
• The main drawback of APDs vs PMT is the strong dependence of the gain with Temperature and Bias Voltage
How to improve the resolution:
-Better stabilisation of both temperature and bias-voltage.- Better optical coupling --> Scionix- Surface coating --> Ukranian Institute for Crystals
- New generation of scintillating crystals
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T and V dependence
Both Crystals and APDs response depends on Tº
T must be kept very stable ! ~0.1o
otherwise, T should be accurately measured in order to keep gain constant by controlling the bias voltage
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Characterization of S8664-1010 APD
T. Ikagawa et al., NIM A 538(2995) 640
T stabilisation ~0.1ºC keep the gain variarion ~ 0.3%
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Temperature stabilisation
Refrigerator 4-5 º C
Humidity control box < 30% (1%)
radiator
Resistor warm focusT probe T stable within 0.1ºC
Ceramics Cold focus~ 10ºC
T controller
22ºC
Allow pulse shape analysis with Tektronix TDS3054B
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Crystal type-2 Bi-frustrum shaped
Waiting for an agreement with StGobain and IMP- Lanzhou(China) --> Price drop!
Exit face fits to LAAPD S8664-2010 under negotiation
First prototypes done at Lanzhou (China
Further tests through prototype
• Good results are only achieved when there is a perfect matching between the crystal exit surface and the APD entrance area
Type 2 View of the Barrel
average dimensions
3x1x13 cm
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Study of St. Gobain vs IMP Lanzhou crystals
Tests performed with API APD Crystal dimensions 1x1x1 cm
Very similar behaviour
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Resolution achieved
IMP Lanzhou St. Gobain
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R3B Type Crystal
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Uniformity of the crystal
Wrapped with ESR (from 3M), tested with 60Co
0 2 4 6 8 10 12 14 16 18 201500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Rel
ativ
e Li
ght-
out(
arbi
trar
y U
its)
CsI Position
The light-out uniformity is 2.8%