global power technologies group sic epitaxial materials group sic epitaxial material sic commercial...

Global Power Technologies Group HistoryFounded in 2006 as “GPE” “GPD” “PM” and “GMM”

We developed and commercialize products based on Silicon Carbide (SiC) Technologies and amorphous magnetic material (AMM) initiated by companies Global Power Electronics, Inc. (“GPE”), Global Power Devices, Inc. (“GPD”) EPI Power Material ,Inc. (“PM”) and Global Magnetic Materials, Inc. (“GMM”).

We changed in 2014 to “Global Power Technologies Group”. Now all of our Groups are under one name “GPTG”. As one name we make SiC epitaxial wafers, SiC discrete power devices, and SiC based power modules and subsystems. Which serve the EV/HEV, Server, Solar inverter, Lighting industry and renewable energy industry Markets.

Coming in 2015 we will also be making High performance inductor based on or “Game Changing “ amorphous magnetic material as part of the GPTG products for energy and power industry.

The Company’s manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned to take advantage of the growth in the commercialization of SiC‐based products as the company is vertically integrated from SiC material to subsystem, which enables high performance and low cost SiC based power electronics products to the World.

GPTG PROPRIETARY AND CONFIDENTIAL 2

Global Power Technologies Group

SiC Epitaxial Materials Group

SiC Epitaxial Material

SiC Commercial Devices Group

Schotkky Diodes & Mosfets

SiC Modules and Systems Group

‐ SiC Modules‐ SiC SubsystemsInverter, OBC

Magnetic Materials Group

Amorphous Magnetic Material for Power Electronics


SiC

Epi waferSBD & MOSFET

ModulesSubsystem

In Production

Soft and Permanent Magnetics

Inductor transformer

Nd less Permanent Magnet for motor

Prototypes

H.T. & H.D Film Capacitor

Technology

DC Link CAP

Evaluation and Partnership

High Temp. IC SOI & SiC

Gate Driver& H.T.

applications

Prototypes

High Efficiency and Compact

High Integration, High Performance, Low Cost

Game Changing Power Electronics

Global Power Technologies Group

GPTG Confidential and Proprietary 4

GPTG Power Electronics Roadmap

GPTG Proprietary and Confidential

GPTG Vertical Integration Strategy

5

SiC Boule

Bulk SiC Growth

Wafer PolishingSliceGrind

SiC Wafer

Epitaxy

Front End

SiC Epiwafer

PhotolithographyMetallizationDielectricsEtching…

Dies on Wafer

Back End 1TestingDicing Bare Dies

PAR

TNER

GPT

G

PARTNER

Back End 2Die AttachWire BondPackage

GPTG PROPRIETARY AND CONFIDENTIAL6

Value all Starts with our EPI Materials Group • EPI material is an expensive part of SiC

Semiconductormanufacturing process.

• GPTG creating its own in house EPI wafers gives us a compelling advantage going forward in the exploding SiC Semiconductor market.

Epitaxy Material Reactor is now in Production!

• GPTG Reactor is full production qualified•100 and 150 mm diameter epiwafers available ( 200 mm July 2015 )Epi thicknesses up to 20 um are standard◦Thicker epi (up to 100+ um) can be developed per customer interest

Epi Doping ◦N‐type from mid e14s to low e18s


GP Epi Technology Competition

Device Yield Analysis: GPTG EPI Group vs. Competition Epitaxy

• GPTG’s EPI Group and “A incumbent” epitaxy produce comparable yields only for the smallest (0.3 amp) devices

• “A” epitaxy device yields drop dramatically with increasing size (<40% at 30 amp)• GPTG yields drop off slightly remaining at ~90% even for 30 amp sized devices


• Backend of tool and support equipment in

class 1000 cleanroom including

• Modern gas cabinets for SiH4, C3H8, N2

(dopant)

• Purifiers for Ar and H2 carrier gases

• Epiwafer cleaning station

• Personnel tool and support equipment

protected by three level fire suppression

system

Tool Backend in Class 1000 Cleanroom

Cost Reduction by Vertical Integration


020406080100

Industry 2010 GPTG NearTerm

GPTG Future

Relativ

e Device Wafer

Cost

Pkg & TestFront‐EndImplantEpitaxySubstrate

Area mm2:Yield:

Relative cost/mm:

6,94050%100

6,94070%25

16,28680%12

Value in SiC Commercial Device Group

Our Value Low Cost SiC Discrete Products:• SiC Schottky Diodes ‐600V, 1200V and 3300V2A, 5A, 10A, and 30A in Package styles of TO‐220, D‐Pak, and TO‐247 (In Production)

• SiC Mosfets ‐650 V , and 1200V RdsOn levels 23mOhm, 80mOhm 160mOhm (Coming January 2015)


Discrete SiC Diodes in Production Part Voltage Amp PackageGP2D0003A060A 600 3TO‐220GDP03S060C 600 3TO‐252 (DPAK)GP2D0003A060C 600 3TO‐252 (DPAK)GDP06S060A 600 6TO‐220GP2D006A060A 600 6TO‐220GP2D006A060C 600 6TO‐252 (DPAK)GDP06S060D 600 6TO‐263 (D2PAK)GDP12S060A 600 12TO‐220GP2D012A060A 600 12TO‐220GP2D012A060D 600 12TO‐252 (DPAK)GDP12S060D 600 12TO‐263 (D2PAK)GDP24P060B 600 24TO‐247GDP36Z060B 600 36TO‐247GDP24D060B 6002X12 TO‐247‐3GDP48Y060B 6002X24 TO‐247‐3GP2D003A065A 650 3TO‐220GP2D003A065C 650 3TO‐252 (DPAK)GP2D006A065A 650 6TO‐220GP2D006A065C 650 6TO‐252 (DPAK)GP2D012A065A 650 12TO‐220

Part Voltage Amp PackageGP2D012A065C 650 12TO‐252 (DPAK)GP2D005A120A 1200 5TO‐220GP2D005A120C 1200 5TO‐252 (DPAK)GDP08S120A 1200 8TO‐220GP2D010A120A 1200 10TO‐220GP2D010A120B 1200 10TO‐247GP2D010A120C 1200 10TO‐252 (DPAK)GDP15S120A 1200 15TO‐220GDP15S120B 1200 15TO‐247GP2D020A120A 1200 20TO‐220GP2D020A120B 1200 20TO‐247GDP30S120B 1200 30TO‐220GDP50P120B 1200 50TO‐247GDP60P120B 1200 602Leaded TO‐247GDP60Z120E 1200 60Extended TO‐247GDP60D120B 1200 60TO‐247‐3GDP60Y120B 1200 60TO‐247‐3GDP30P120B 120015+15 TO‐247GDP30D120B 12002x15 TO‐247‐3GP2D005A170B 1700 5TO‐247GP2D010A170B 1700 10TO‐247GP2D020A170B 1700 20TO‐247


SOT‐227

Available in Buck or Boost Chopper module

38 x 24 mm std. footprint.

50‐75 A rating

6 Pack

Six switch inverter module

130 x 103 mm std. footprint.

100‐200 A rating

GPTG PROPRIETARY AND CONFIDENTIAL

Dual Package• Available in Chopper or

Half‐Bridge module• 150 x 60 mm std. footprint.• 100‐200 A rating

Value in Commercial Modules GroupModules with SiC/Si hybrid configuration or with all SiC components

GPTG Power Module Products

GPTG SiC Modules Group is an integration of GPTG Devices Group

GPTG Custom designed and developed a six‐pack full SiC power module working with continuous junction temperatures in excess of 200 °C to be used for 50 kW inverter. The module consists of following attributes

– Integration of 24 SiC 1200V MOSFET and 12 SiC 1200 V Diodes

– High temperature package process development

– Thermo‐mechanical design with high integration density

– Electrical design to increase the switching speed

– A high density, high conversion efficiency, and high temperature operations

A typical Power Module Developed by GPTG


SiC SOT ‐227 Modules in Production


Part Configuration Vce I_IGBT I_SBDGHIS040A060S‐A1 Boost Chopper (T_FS) 600 40 24GHIS060A060S‐A1 Boost Chopper (T_FS) 600 60 36GHIS080A060S‐A1 Boost Chopper (T_FS) 600 80 48GHIS040A060S‐A2 Buck Chopper (T_FS) 600 40 24GHIS060A060S‐A2 Buck Chopper (T_FS) 600 60 36GHIS080A060S‐A2 Buck Chopper (T_FS) 600 80 48GHIS030A120S‐A1 Boost Chopper (T_FS) 1200 30 15GHIS040A120S‐A1 Boost Chopper (T_FS) 1200 40 30GHIS060A120S‐A1 Boost Chopper (T_FS) 1200 60 30GHIS080A120S‐A1 Boost Chopper (T_FS) 1200 80 45GHIS030A120S‐A2 Buck Chopper (T_FS) 1200 30 15GHIS040A120S‐A2 Buck Chopper (T_FS) 1200 40 30GHIS060A120S‐A2 Buck Chopper (T_FS) 1200 60 30GHIS080A120S‐A2 Buck Chopper (T_FS) 1200 80 45

GPTG Parts Configuration Vce I_IGBT I_SBDGHXS010A060S‐D4 Anti‐parallel 600 12GHXS020A060S‐D4 Anti‐parallel 600 24GHXS030A060S‐D4 Anti‐parallel 600 36GHXS050A060S‐D4 Anti‐parallel 600 48GHXS010A060S‐D3 Parallel 600 12GHXS020A060S‐D3 Parallel 600 24GHXS030A060S‐D3 Parallel 600 36GHXS050A060S‐D3 Parallel 600 48GHXS015A120S‐D4 Anti‐parallel 1200 15GHXS030A120S‐D4 Anti‐parallel 1200 30GHXS045A120S‐D4 Anti‐parallel 1200 45GHXS060A120S‐D4 Anti‐parallel 1200 60GHXS015A120S‐D3 Parallel 1200 15GHXS030A120S‐D3 Parallel 1200 30GHXS045A120S‐D3 Parallel 1200 45GHXS060A120S‐D3 Parallel 1200 60GHXS010A060S‐D1 Full Bridge 600 12GHXS010A060S‐D1E Full Bridge 600 12GHXS020A060S‐D1 Full Bridge 600 24GHXS020A060S‐D1E Full Bridge 600 24GHXS030A060S‐D1 Full Bridge 600 36GHXS030A060S‐D1E Full Bridge 600 36GHXS015A120S‐D1 Full Bridge 1200 15GHXS015A120S‐D1E Full Bridge 1200 15GHXS030A120S‐D1 Full Bridge 1200 30GHXS030A120S‐D1E Full Bridge 1200 30GHXS045A120S‐D1 Full Bridge 1200 45GHXS045A120S‐D1E Full Bridge 1200 45


Since 2006 we have been serving the Automotive, Solar, and Industrial markets with

SiC Systems and Subsystems.Other SiC makers do Discrete and Modules

which we manufacture. Our Systems and Sub‐ Systems Group truly differentiates us in the SiC Semiconductor

market.

Value in GPTG System/Subsystem Group


GPTG SiC System Products Milestones

• Size: 22.9 x 22.4 x 7.1 cm

• Volume: 3.6 liters

• Weight : 3.53 kilograms

• Specific power : 8.35 kW/L

• power density: 8.5 kW/kg

• The highest efficiency measured is 98.5%.

• The safety lock out circuits successfully protects the normally on JFET’s at shoot through condition.

• The inverter operates at 95 oC coolant temperature.


Published at IEEE Transaction on Power Electronics. “High Temperature SiC JFET Based Six‐Pack Power Module for a Fully Integrated 50 kW Inverter” 2011

GPTG’s 50kW All SiC Traction Inverter


3.5 kW all SiC based On‐Board Automotive Charger.

Power = 3.5 kW• Vin = 85 to 265 Vac, 16Arms max• Vout = 200 to 430Vdc, 10Adc max• Liquid Cooling = ‐20 to +70oC at 7 LPM• Isolated (AC Input to DC Output)• Size = 2.9L displaced• Mass = 3.2kG• Conversion Efficiency => 94%


GPTG On Board Chargers

Value of GPTG Magnetic Materials Group• Magnetic Materials Group (GMM) conceptualized by GPTG, founded with Caltech in June 2010.•Leveraging over 29+ Caltech/Johnson patents.• The company incubated within Caltech campus.• New several IP’s created since MMG inception for the Power Market• Develop high performance and low cost amorphous soft magnetic inductor & transformer cores GPTG Magnetic Materials

Group

Alliance with


Coming 2015


MMG Products Performance

Soft ferromagnetic glassesSoft ferromagnetic glasses

Fe‐(Ni,Co)‐Mo‐(P,C,B,Si)Casting thickness: 6 mmYield strength: 3000 MPaYoung’s modulus: 150 GPaVickers hardness: 900 HV


Silicon Carbide (SiC) Semiconductor Market will be worth $3182.89 Million by 2020According to a new market research report by “Markets and Markets "Published June 2014"Silicon carbide (SiC) in semiconductor market by technology, product, and application (Automotive, Defense, Computers, Consumer Electronics, ICT, Industrial, Medical, Power, Railways, and Solar), by geography ‐ forecast and analysis to 2013 ‐ 2020" the Silicon Carbide (SiC) Semiconductor Market is expected to reach $3182.89 Millionby 2020; growing at a CAGR of 42.03% from 2014 to 2020.


SiC EPI Wafer SiC Modules SiC Subsystems

GPTG Products

GPTG’s SiC Value Proposition Chain‐ to hit the Growing Market Needs


SiC Devices

Coming 2015 Game ChangingPower Magnetics

The Value of Global Power Technologies•100 mm•150 mm•200 mm

•100 mm•150 mm•200 mm

Epitaxial Wafer Manufacturing

•SiC Diodes 600V 1200V, and 3300V•SiC Mosfets 23 mOhm, 80mOhm, 160mOhm•SiC Diodes 600V 1200V, and 3300V•SiC Mosfets 23 mOhm, 80mOhm, 160mOhmLow Cost SiC Devices

•600V and 1200V•Anti‐ Parallel, Parallel, Full Bridge, Boost Chopper , Buck Chopper•600V and 1200V•Anti‐ Parallel, Parallel, Full Bridge, Boost Chopper , Buck ChopperSiC Modules

•3.3kW on Board Charger•6.6kW on Board Charger•Custom System for Automotive, Industrial, Solar, Motor Control Markets

•3.3kW on Board Charger•6.6kW on Board Charger•Custom System for Automotive, Industrial, Solar, Motor Control Markets

SiC Systems

•high performance •low cost amorphous•soft magnetic inductor & transformer cores

•high performance •low cost amorphous•soft magnetic inductor & transformer cores

Magnetics Material for the Power Market


Value of GPTG. We are bringing EPI Material and Silicon Carbide(SiC) Device, Modules, and System products into the Power Designers hands at lower cost!


‐Applications ‐ Price points will accelerate “SiC Designs”

‐Internal control of most expensive remaining cost element: epitaxy.

‐World class team of device and process design.

‐Established factory for fabrication

‐Manufacturing based on Substrate/EPI /Devices/ Modules and Systems –We will truly be the SiC Semi‐Total Solution Vendor‐

‐Effective utilization of capital

‐Total control of Quality

global power technologies group sic epitaxial materials group sic epitaxial material sic commercial...

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