PMMA & HSQ trend chart

December 2012Sangeeth kallatt

PMMA sample preparation

• Substrate : 100 oxide & Si wafer• Cleaning : O2 plasma clean (2000W, 10 min)• Spin speed : final rpm 6000 for 40 sec• Pre bake: 180 degrees for 3 min• Exposure parameters:

• EHT : 20 Kv• Aperture : 10um• Working distance: 5mm• Development time : 30 sec in MIBK: IPA (1:3)

50nm line : standard deviation from expected

100nm line : standard deviation from expected

200nm line : standard deviation from expected

PMMA grating patterns for proximity study

PMMA circles

Contrast curve for PMMA 950 A2

D0 = clearing dose ≈ 140D100 = dose with resist insoluble ≈ 95

Which gives ϒ = 6.8

HSQ sample preparation

• Substrate : Si wafer• Cleaning : O2 plasma clean (2000W, 10 min)• Spin speed : final rpm 6000 for 40 sec• Pre bake: no pre bake • Exposure parameters:

• EHT : 20 Kv• Aperture : 10um• Working distance: 5mm• Development time : 2 min in 2.36 % TMAH

HSQ lines

25 nm HSQ lines: variation of line width with Pitch

Pattern size

50 nm HSQ lines: variation of line width with Pitch

Pattern size

100 nm HSQ lines: variation of line width with Pitch

Pattern size

Patterns for studying proximity effects

HSQ pillars

Contrast Curve for HSQ (XR1541-6%)

D0 = dose , negative resist removed ≈ 225D100 = dose for negative resist insoluble≈ 260

Which gives ϒ = 16