plasma trong các phương pháp tạo màng
TRANSCRIPT
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Plasma trong cc phng php to mng mng
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Phng php CVD
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Ha hc trong CVD
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H CVD
H thng phn phi kh
Bung phn ng
H thng ti
Ngun nng lng : cung cp nng lng cho precursor phn ng
Ngun chn khng
H thng x kh v h thng x l cht kh sau khi phn ng.
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L phn ng CVD
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u im PP CVD Mng c tinh khit, ng u cao.
Lng ng c trn cu trc c hnh dng phc tp Mng lng ng c ng sut nn cao mng xp cht.
Nhc im PP CVD
Trong bung phn ng nhit tng i cao nn cc b phn bntrong bung d b lp oxit bao ph. Nhiu sn phm kh sau phn ng c c tnh cao phi c h
thng x l kh thi tt. Chi ph cao.
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ng dng ca PP CVD
To lp ph cho cc thit b chng n mn To cht bn dn dng cho cc vi mch tch hp, cm bin,
thit b quang in. Si quang Composite
.
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PECVD ( Plasma Enhanced CVD )
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Plasma in dung ( capacitive
plasmas )
-To ra khi p th AC hay RF : 60Hz vi
trm MHz gia hai in cc.-p sut h : 100 mTorr 10 Torr.
- Hai in cc hnh trn, khong cch giahai in cc ( 0.5 cm 10 cm ) rt nh so
vi ng knh mi in cc.
Pressure Mean Free Path* Gap Gap/MFP
100 mT 0.5 50 100
1 Torr 0.05 20 400
10 Torr 0.005 5 1000
http://www.timedomaincvd.com/CVD_Fundamentals/introduction/kinetic_theory_example.htmlhttp://www.timedomaincvd.com/CVD_Fundamentals/introduction/kinetic_theory_example.html -
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- To vng khng gian c mt electron rt thp.
- Mt plasma rt thp : khong 0.01% phn t b ion ha
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in t va chm vi cc nguyn t, phn t kh sinh racc ion. Ion c gia tc p vo in cc, lm bt ra
in t th cp. Di tc dng ca in trng, int th cp c tng tc vo vng plasma tngnng in t duy tr s phng in.
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Plasma cm ng ( Inductive plasma )
Di tc dng ca t trng v in trng, electron
chuyn ng vi qu o xon c trc khi ti b mt gim nng lng bn ph b mt .
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- Cc electron trao i nng lng chm c th dng nng lng cae- choqu trnh phn ng h thp c nhit phn ng.
- B mt mu tip xc vi plasma s chu s bn ph ca cc ion c nng lngcao nh hng cu trc mng mng dy c hn, c ng sut cao hn,mng xp cht hn.
- Plasma gp phn lm sch bung phn ng
u im phng php PECVD