piezoelectric mems
TRANSCRIPT
Piezoelectric MEMS with Giant Piezo Actuation
MEMS with piezoelectric materials - Integrated Actuation ‘’ Sensing ‘’ Transduction
MEMS on Si – 1. Capacitive with metallic electrodes 2. Piezoelectric with active piezo-materials (like PZT)
Applications - Ultrasound Medical Imaging Microfludic Control Mechanical Sensing Energy Harvesting
Piezoelectricity “Piezo” – Pressure; Piezo-electricity - pressure electricity
Direct and Converse piezoelectric effect
Important Piezoelectric ParametersPiezoelectric Figure of Merit
Piezoelectric Strain Constant (d) – Magnitude of the induced strain (x) by an external electric field. x= d.E
Piezoelectric Voltage constant (g) – field per unit strain. g =d/(εε0) ; ε= permittivity
Electromechanical Coupling Factor (k) – Conversion rate between elec. & mech. energy. = (stored elec. Energy)/(Input mech. Energy) = d2/ (εε0).s
Energy Transmission Coefficient (λ) – Maximum k in actual device = ʃ E.dp = (εε0E + d.x)E
Efficiency (Ƞ) - (output mech. Energy)/(Consumed elec. Energy)
Displacement and Stress/Strain relation (at low fields)
Clamping to the Substrate changes it all !!
31 and 33 modes of piezoresponse
Piezoelectric Properties of representative materials
MEMS Based on PbZr(1-x)Tix03
Interesting Properties at MPB –1.High Dielectric Susceptibility2.High Remnant Polarization3.High Piezoelectric Coefficient
Pertinent issues encountered while integrating on Si –1. Suitable buffer layer owing to higher lattice mismatch.2. Suitable bottom electrode maintaining epitaxial nature .3. Suitable growth condition leading to defect-minimal interface.
MEMS Based on PZT
Earlier Works Appl. Phys. Lett., Vol. 74, No. 23, 7
Appl. Phys. Lett. 68 (10)
Appl. Phys. Lett. 63 (26),
(001) Si
SiO2
YSZLSCO
PZT
LSCO
Appl. Phys. Lett. 63 , 189
Appl. Phys. Lett., Vol. 76, No. 11, 13
Electron Diffraction Patterns
TiN/SiSTO/MgOYBCO/MgOPZT/YBCO
J. Micromech. Microeng. 20 (2010) 055008
Hys
tere
sis
Loop
Process Flow for MEMS Micro-fabricationProcess Flow for MEMS Micro-fabrication
PZT
Canti
leve
rPZ
T M
embr
ane
Problem with Giant Piezo MEMS – Relaxor materials are difficult to integrate in Si matrix for device fabrication
MEMS with Giant Piezo Coefficients
PMN:25%PTPMN:33%PTPYN:46%PT
PZT
Giant Piezoelectricity for Hyperactive MEMS
Material: PMN:33%PTOrientation : (001) {according to S. E. Park, T. R. Shrout, J. Appl. Phys. 82, 1804 (1997)}
Problem : Growth of Pyrochlore Phase.
Approaches : 1) The use of SrTiO3 buffer layer. 2) a high miscut in Si substrate. (To incormorate volatile components in the film like PbO suppressing formation of pyrochlore)
Zero Miscut 4o miscut
Atomically sharp interfaces.
Existence of a built-in-bias – advantages and drawbacks.
HRTEM at the Interface
Dielectric and Ferroelectric Measurement
Piezoresponse
Possible reason of higher piezo-activity- 1. Substantial self-polarization 2. Built in bias
Highest e31,f measured after poling = -27 +/- 3 c/m2
How far the properties hold w.r.t. microfabrication ?
Fabrication
Cantilever deflection with external bias
Conclusions Epitaxial growth of PMN-PT on (001)Si using STO buffer. Improved growth through introduction of a high miscut in Si. Manifestation of giant piezoelectric properties. Higher figure of merit suitable for device integration. Preserved properties after microfabrocation.
Coda and Future Challenges High piezo-actuation through use of relaxors may enhance device sensitivity Denser device integration in IC – actuator arrays through easing downscaling. Low power consumption owing to reduction in actuation charge density. Smaller electromechanical devices with better performances.
Exploitation of higher 33 mode response of PMN-PT rather 31 mode. Tuning the elastic properties of passive layers (SiO2, electrode, STO)to
enhance in figure of merit further. Using SOI for complex device structures with desired passive layer thickness. Beyond EMS devices – tune and modulate multifunctional properties with
giant electrostriction and dynamic strain control.