performance of a reflectron energy compensating mirror

1
~180 4()~ Surface Science 246 (1991) 408-414 N~r~h-Holland Diagnosis of radio-frequency silane and silane-nitrogen plasmas based on field ionization mass spectrometry F. Okuyama, H. Hayashi and H. Iwai D~Tartment of Systems Engineering, Nagoya lnstttute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan Received 30 July 1990; accepted for publication 6 August 1990 Field ionization mass spectrometry was applied to identify the neutral species involved in silane and silane-nitrogen plasmas used for manufacturing amorphous Si and SiN films. The most abundant radical in silane plasmas was found to be Sill 3, suggesting that Si H ~was primarily responsible for growing amorphous Si films. The silane plasmas also comprised Si 2 H. radicals, which presumably resulted from chemical reactions of atomic hydrogen with deposited films. The SiN + signal detected for silane-nitrogen plasmas was very weak, so the growth of SiN films was due mainly to reactions between deposited Sill. radicals and atomic nitrogen, Surface Science 246 (1991) 415-419 415 North-Holland Performance of a reflectron energy compensating mirror P.P. Camus National Institute of Standards and Technology, Surface Science and Metallurgy Divisions, Gaithersburg, MD 20899, USA and A.J. Melmed Custom Probes Unlimited, Box 3938, Gaithersburg, MD 20878, USA Received 27 July 1990; accepted for publication 27 August 1990 This paper describes the performance characteristics of a first order reflectron energy compensating mirror system on a voltage-pulsed atom probe. The performance of the instrument using the electrostatic mirror is compared to that obtained using the same electronics and a linear flight path, and the effect of an einzel lens on the performance is presented. 420 Surface Science 246 (1991) 420-427 North-Holland Design and performance of a scanning probe-hole field emission microscope R.M. Wolf, J.W. Bakker and B.E. Nieuwenhuys Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden, Netherlands Received 29 July 1990; accepted for publication 6 August 1990 A novel scanning field emission probe-hole microscope controlled by a computer is presented. Changes in work function can be measured continuously and simultaneously on the different single crystal surfaces present on a field emission tip under various experimental conditions such as temperature and gas pressure. Some tests experiments will be presented. The anisotropy of the work function over a rhodium field emitter is described. The particular attractiveness of the method is its unique ability to follow surface processes simultaneously on different surfaces with known surface structure. For example, the step density and the step structure can be varied systematically and their influence on processes like adsorption and reaction can be examined. Some possible applications are mentioned.

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Page 1: Performance of a reflectron energy compensating mirror

~180

4()~ Surface Science 246 (1991) 408-414 N~r~h-Holland

Diagnosis of radio-frequency silane and silane-nitrogen plasmas based on field ionization mass spectrometry F. Okuyama, H. Hayashi and H. Iwai D~Tartment of Systems Engineering, Nagoya lnstttute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan

Received 30 July 1990; accepted for publication 6 August 1990

Field ionization mass spectrometry was applied to identify the neutral species involved in silane and si lane-nitrogen plasmas used for manufacturing amorphous Si and SiN films. The most abundant radical in silane plasmas was found to be Sill 3, suggesting that Si H ~ was primarily responsible for growing amorphous Si films. The silane plasmas also comprised Si 2 H . radicals, which presumably resulted from chemical reactions of atomic hydrogen with deposited films. The SiN + signal detected for s i lane-nitrogen plasmas was very weak, so the growth of SiN films was due mainly to reactions between deposited S i l l . radicals and atomic nitrogen,

Surface Science 246 (1991) 415-419 415 North-Holland

Performance of a reflectron energy compensating mirror P.P. Camus National Institute of Standards and Technology, Surface Science and Metallurgy Divisions, Gaithersburg, MD 20899, USA

and A.J. Melmed Custom Probes Unlimited, Box 3938, Gaithersburg, MD 20878, USA

Received 27 July 1990; accepted for publication 27 August 1990

This paper describes the performance characteristics of a first order reflectron energy compensat ing mirror system on a voltage-pulsed atom probe. The performance of the instrument using the electrostatic mirror is compared to that obtained using the same electronics and a linear flight path, and the effect of an einzel lens on the performance is presented.

420 Surface Science 246 (1991) 420-427 North-Holland

Design and performance of a scanning probe-hole field emission microscope R.M. Wolf, J.W. Bakker and B.E. Nieuwenhuys Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden, Netherlands Received 29 July 1990; accepted for publication 6 August 1990

A novel scanning field emission probe-hole microscope controlled by a computer is presented. Changes in work function can be measured continuously and simultaneously on the different single crystal surfaces present on a field emission tip under various experimental conditions such as temperature and gas pressure. Some tests experiments will be presented. The anisotropy of the work function over a rhodium field emitter is described. The particular attractiveness of the method is its unique ability to follow surface processes simultaneously on different surfaces with known surface structure. For example, the step density and the step structure can be varied systematically and their influence on processes like adsorption and reaction can be examined. Some possible applications are mentioned.