opto-semiconductors - hamamatsu · opto-semiconductors such as photodiodes, photo ics, image...
TRANSCRIPT
Opto-semiconductorsCondensed Catalog
HAMAMATSU PHOTONICS K.K.
HAMAMATSU PHOTONICS has been at the cutting edge of photonics technology for 60 years. In that time, HAMAMATSU has developed and produced a wide range of opto-semiconductors such as photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other products using opto-semiconductors.Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in many fields ranging from scientific measurements, medical diagnosis, communications, and consumer electronics as well as in-vehicle applications.In the days ahead, besides improving our semiconductor process and mounting/packaging technologies to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems) technology that merges photonics technology with MEMS technology to develop opto-semiconductors with even higher sensitivity, speeds, and functions.
Our unique photonics technology delivers highly sophisticated opto-semiconductors withhigh-sensitivity and high-speed response.
Koei YamamotoRepresentative Director and Senior Managing DirectorDirector of Solid State DivisionHamamatsu Photonics K. K.
C o n t e n t s
Applications of HAMAMATSU opto-semiconductors........................ 3 - 5Opto-semiconductor selection guide .......................................... 6 - 8Manufacturing process of opto-semiconductors ...................... 9 - 12Map / Annual sales / Organization chart ................................ 35 - 36
1
Highly sophisticated opto-semiconductors with high-sensitivity and high-speed response
Semiconductorprocess technologies
Mounting/packagetechnologies
HAMAMATSU "MOEMS" (Micro-Opto-Electro-Mechanical Systems) technologies
MEMStechnologies
Our high sensitivity/high-speed device technology and CMOS circuit technology produce highly sophisticateddevices.
· Silicon process· Compound crystal growth
A variety of package styles are available including high-reliability packages, surface-mount packages, and small, thin packages.
· Metal package· Ceramic package· Plastic package· COB (chip on board), etc.
Fine processing is used to enhance the functions of optical devices.
· Etching· Nanoimprint· Resist spray coating· Bonding· Through-hole electrode
HAMAMATSU opto-semiconductors
LED.............................................. 29Optical communication devices....... 30Mini-spectrometers................. 31 - 32Opto-semiconductor modules.. 33 - 34
Flat panel sensors ......................... 23PSD (position sensitive detectors)... 24Infrared detectors .................. 25 - 26Visible light sensors ....................... 27Color sensors ................................ 28
Si photodiodes ....................... 13 - 14Si APD................................... 15 - 16MPPC .................................... 17 - 18Photo IC ................................ 19 - 20Image sensors ....................... 21 - 22
2
©Frank Boston-Fotolia.com
RGB color sensors
Our automotive devices are widely used in vehicles. (In-vehicle LAN, ambient light level detection, day/night detection, windshield rain sensors, laser radars, multi-function jog dials, pedestrian protection systems, glare-proof mirrors, etc.)
Automotive applicationsColor sensors are used for detecting ambient light color.
LCD color adjustment
Our Si photodiodes are widely used as detectors in X-ray baggage inspection systems.
X-ray non-destructive inspection
Si photodiode arrays
CCD area image sensors are used in panoramic/cephalometric imaging equipment for dental diagnosis.
Dental X-ray imaging
CCD area image sensors
Applications of HAMAMATSU opto-semiconductorsHAMAMATSU opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics as well as medical and scientific applications.
Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
3
©Nmedia-Fotolia.com
, ,
Si APD
Si APD and PIN photo-diodes are used in surveying instruments for distance measurement.
RangefindersWe provide light transmit-ter and receiver devices for optical fiber communi-cations and FSO (free space optics).
Optical communications
Optical communication related devices
The MPPC is used in diverse applications for detecting extremely weak light at the photon-counting level.
Photon counting
Automotive devices
The world’s highest sensitivity CCDs manufactured by HAMAMATSU are installed in the Suprime Cam/Subaru Prime Focus Camera of the Subaru Telescope at the summit of Mauna Kea, Hawaii.
Astronomical observation
CCD area image sensorFlat panel sensor
Subaru Telescope [by courtesy of NAOJ Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)](National Astronomical Observatory of Japan)]Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
4
©Zoe-Fotolia.com
MPPC
Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)]
The European Organization for Nuclear Research (CERN) in Switzer land is conducting a project involving the Large Hadron Collider (LHC). The Si strip detec-tor by HAMAMATSU is being used as the particle track detector in the collider, and is detecting particle tracks with a preci-sion on the order of several tens of μm.
High energy experiments
Si APDSi strip detector
Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control.
Industrial robots
Si PIN photodiode arraysInfrared LED
Back-thinned TDI-CCD image sensors are used for wafer defect inspections.
Semiconductor manufacturing equipment
Back-thinned TDI-CCD image sensors
CMS project(by courtesy of CERN)
Applications of HAMAMATSU opto-semiconductors
5
Opto-semiconductor selection guide
Visible
IR
Segmented type
X-ray
Near IR
IR
1D
Non-segmented type
Point sensor
Photon counter
Image sensor
Position sensor
High energy particle
Visible
2D
UV
Im
P
Lightemitter
Photosensor
6
[Product name] [Applications]
Red LED Optical switches, optical fiber communications
Infrared LED Optical switches, light sources for measurement devices, optical communication, automatic control, rotary encoding
Si photodiode with compensation filter Illuminometry, copiers, color sensors
Diffusion type GaAsP photodiode Illuminometry, flame eyes (monitors)
Illuminance sensor
Color sensor Display color adjustment, color detection
Energy-saving sensors for TV, etc., light dimmers for liquid crystal panels,backlight dimmers for cell phones, optical power measurements
Si photodiode
Si APD (avalanche photodiode) Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics
Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications
InGaAs PIN photodiode Optical communication, IR laser monitoring, radiation thermometry, industrial measurement
PbS/PbSe photoconductive detector Radiation thermometry, flame eyes (monitoring), moisture analysis, gas analysis, spectroscopy
IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging
Thermal imaging, radiation thermometry, FTIR, gas analysis, CO2 laser detection
Photon drag detector CO2 laser detection
Thermopile detector Radiation thermometry, gas analysis, flame eyes (monitors)
MPPC Medical use, nuclear medicine, high energy physics, radiation measurement
Linear image sensor Multichannel spectroscopy, spectrum analysis, optical measurement
Photodiode array Multichannel spectroscopy, color analysis, spectrum analysis, position detection
Multi-element photodiode Optical disk pickup, position detection
Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical use
PSD (position sensitive detector) Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics
X-ray image sensor Radiography, non-destructive inspection
Area image sensor Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, NIR imaging
Flat panel sensor Radiography, X-ray diffractometers, non-destructive inspection
SSD High energy physics, nuclear medicine, industrial measurement
Optical communication devices, information equipment, automatic control systems, general electronics,car electronics, photometric equipment, medical equipment, high energy physics
InSb photoconductive detector,InSb/InAs/InAsSb photovoltaic detector
MCT (HgCdTe) photoconductive/photovoltaic detector
Si photodiode for UV light
Schottky type GaAsP photodiode
Schottky type GaP photodiode
Pollution analysis, spectroscopy, medical use, UV detection, colorimetry
Pollution analysis, spectroscopy, colorimetry, UV detection
UV detection
IR-enhanced Si photodiode/Si APD YAG laser monitor, NIR detection
7
Moduleproduct
Mini-spectrometer,photosensor amplifier,APD module, etc.
Selection guide by wavelength
Wavelength
Phot
osen
sor
Ligh
t em
itter
0.2 0.4 0.6 0.8 1 2 4 6 8 10 20 (μm)
Si
GaP
InGaAs
GaAs LED
GaAlAs LED
PbS
PbSe
InAs
InSb
MCT
Thermopile detector
InAsSb
GaAsP
Spectralrange
UV Visible Near IR Middle IR
8
Thin films are formed on wafers by oxidation or CVD process.
Oxidation
SiO2
Si
Device patterns are formed by photolithographic technique.
Photolithography
SiResist
SiO2
Photomask
Selective etching is performed on the thin film on wafers.
Etching
Si
Resist
SiO2
[Typical process of Si photodiode fabrication]
Design for new products Design for custom products
Thin-film crystal growth under ultra-high vacuum in MBE equipment Thin-film crystal growth with MOCVD equipment
[Typical compound semiconductor fabrication process]
HAMAMATSU has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies.
Fabricates high-speed photodiodes by integrating a PIN photodiode and high-speed signal processing circuits onto a single chip.
PIN bipolar process
We develop CMOS sensors for various application fields such as chemical analysis, medical diagnosis, in-vehicle devices, information processing, and general electronics using our unique analog CMOS process as a core technology.
CMOS process
Back-thinned CCD area image sensors have a very thin photosensitive layer for high sensitivity yet low dark current.
Back-thinned CCD process
Utilizing compound semiconductor process technologies that include MBE, MOCVD, and dry etching techniques optimized for precision processing, we have been developing high-performance devices for optical communications, chemical analysis, and measurement.
Compound process
Manufacturing technologies
Product examples produced using our compound semiconductor process
InGaAs APD InGaAs linear image sensors
Semiconductor process technologies
Si wafer (before process)
Wafer process
Design Epitaxial growth process
Electrical and opticalcharacteristics
Active area Number of elements Package Reliability
[Example of custom orders]
Product examples produced using our CMOS process
Digital color sensors CMOS image sensors
Manufacturing process of opto-semiconductors
9
Doping impurities are injected into wafers.
Ion implantation
Si Diffusion layer
SiO2
Ion
Metal pattern is formed.
Metallization
Metal
SiDiffusion layer
SiO2
Devices on the wafer are inspected electrically and optically.
Wafer inspection
Metal
SiDiffusion layer
SiO2
Main factory (Ichino)
To assembly process
Etching is a basic semiconductor process technology. MEMS technology utilizes anisotropic etching and sacrificial layer etching as well as conventional etching techniques to provide versatile functions impossible to achieve by conventional opto-semiconductors. Anisotropic etching forms inclined surfaces on Si wafers and fabricates 3-dimensional structures with a high aspect ratio. Sacrificial layer etching is applied to form the actuators and hollow structures needed for thermal isolation.
EtchingNanoimprint is a technology for fabricating fine structures at a high throughput. Light curing resin is applied to a substrate upon which a master substrate with a fine structure is then pressed. Light is then irradiated to transfer the nanoscale structure to the resin.
Nanoimprint3D mount technology can be broadly grouped into “electrode technology” for fabricating structures with 3D electrical connections and “bonding technology” for making wafer level packages. Electrode technology is essential for achieving more sophisticated functions and smaller size opto-semiconductors. Electrode technology involves techniques for forming Si through-hole electrodes to extract electrodes from the backside of devices and flip-chip bonding to make electrical connections between different materials. Bonding technology includes anodic bonding and room-temperature bonding that need no adhesives and that apply direct sealing on devices to achieve ultra-small packages.
3D mount technology
MEMS (micro-electro-mechanical systems) technology is the focus of much attention since it revolutionizes the functions of opto-semiconductors. Hamamatsu is developing highly functional opto-semiconductors using a wide range of MEMS technologies.
V groove formed by anisotropic etching
Actuators formed by sacrificial layer etching (bulk micromaching)
20 μm pitch indium bump electrodes
MEMS technologies
10
Nanoimprint
Ceramic Surface mount type ceramicTO-CAN metal Rectangular metal
Mounting/packaging technologies
Shingai factory (Assembly factory)Mitsue factory (Assembly factory)
Gold bumps are formed on wafers.
Bump forming
Wafers are cut by a spinning blade.
Blade dicing
A laser cuts a wafer by irradiating the interior ofthe wafer.
Stealth dicing
Dicing
Metal package
Ceramic package
Plastic package
Chip size package
Assembly process [Typical process]
Chips are bonded to metal bases.
Die bonding
Chips are bonded to ceramic bases.
Die bonding
Chips are bonded to lead frames.
Die bonding
Dicing
Blade dicing
Stealth dicing
or
11
Manufacturing technologies
Hamamatsu offers a variety of package types to meet diverse market needs. For example, metal packages are widely used in applications requiring high reliability. Ceramic packages are used in general applications. Plastic packages are suitable for high-volume applications where lower cost is essential. Special packages include rectangular metal packages designed for use with thermoelectrically-cooled CCD area image sensors. Many different types of surface mount packages are also available. COB (chip on board) devices and thin plastic package devices are ideal especially for applications where small, thin devices are needed. What's more, photodiode/scintillator combination devices are available that detect X-rays or radiation by converting them into visible light.
Chip size packageGlass epoxy board
With scintillator With flexible cable Flip chip bonding
Plastic Long and narrow type
Chips are connected to metal bases using gold wires.
Wire-bonding
Chips are connected to ceramic bases using gold wires.
Wire-bonding
Chips are connected to lead frames using gold wires.
Wire-bonding
Chips with bumps are bonded to substrates by being flipped (inverted).
Flip chip bonding
Metal caps are welded to metal bases.
Cap sealing
Resin is injected into ceramic bases.
Resin encapsulation
Resin is molded along lead frames and chips.
Resin molding and trimming
The space between the substrate and chip is filled in with resin.
Underfill filling
Test
12
Electrical & optical characteristics are tested.
Metal package test equipment
Appearance inspection
Electrical & optical test
Plastic package test equipment
The appearances of finished products are inspected.
Appearance inspection system
X-ray & appearance inspection system
[Si photodiodes]Product lineup for wide-ranging applicationsSi photodiodes are used in various applications covering optical fi ber communications, copiers, analytical instruments and baggage inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages.
1 Si photodiode
4 Si photodiode with preamp
2 Si PIN photodiode
5 TE-cooled typeSi photodiode
3 Multi-element type Si photodiode
6 Si photodiode for X-ray
13
Spectral response (typical example)
S i P H O T O D I O D E S
S1226/S1336-8BQ, S1227/S1337-1010BR S3590-19, S3759, S9219
2000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1200300 400 500 600 700
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
800 900 1000 1100
(Typ. Ta=25 ºC)
S1336-8BQ(For UV to NIR)
S1337-1010BR(For UV to NIR)
S1227-1010BR(IR sensitivity suppressed)
S1226-8BQ(IR sensitivity suppressed)
QE=100%
2000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1200300 400 500 600 700
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
800 900 1000 1100
(Typ. Ta=25 ºC)
S3759 (for YAG laser)
S3590-19(high violet sensitivity)
QE=100%
S9219(visible-sensitive compensated)
KSPDB0300EB KSPDB0301EB
Features Major applications
Excellent linearity with respect to incident light
Low noise
Wide spectral response range
Mechanically rugged
Compact and lightweight
Long life
Analytical instrument
General photometry
Baggage inspection
Optical fi ber communications
Product name Product examples
For UV to near IR range For visible to near IR range For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detection
Cutoff frequency: 1 GHz or more Cutoff frequency: 500 MHz to less than 1 GHz Cutoff frequency: 100 MHz to less than 500 MHz Cutoff frequency: 10 MHz to less than 100 MHz IR-enhanced type For YAG laser detection
Segmented type photodiode One-dimensional, two-dimensional photodiode array
For analytical instrument and precision measurement
With scintillator Large photosensitive area type
S i P H O T O D I O D E S
Product lineup
1 Si photodiode
2 Si PIN photodiode
3 Multi-element type Si photodiode
4 Si photodiode with preamp
5 TE-cooled type Si photodiode
6 Si photodiode for X-ray
14
Product name Feature
These modules are high-precision photodetectors integrating a Si photodiode or InGaAs photodiode with a cur-rent-to-voltage conversion amplifi er into a compact case. Dedicated controller is also provided (sold separately).
Photosensor amplifi ers are current-to-voltage conversion amplifi ers used to amplify very slight photocurrent from a photodiode with very low noise.
To make our photodiodes easier to use, we offer a variety of modules.
Photodiode module
Photodiode module
Photosenser amplifi er
Si PIN photodiodes with enhanced near-infrared sensitivity made by MEMS technology
IR-enhanced Si PIN photodiode
These Si PIN photodiodes offer high sensitivity in the near infrared region via MEMS technology. They have both high-speed response and high sensitivity in the near infrared region which have been difficult to achieve up to now by conventional methods.
T O P I C
0.8
0.6
0.4
0.2
0200 800 1000600400
Wavelength (nm)
1200
Phot
osen
sitiv
ity (
A/W
)
(Typ. Ta=25 °C)
IR-enhancedSi PIN photodiodeS11499 series
Previous type
QE=100%
KPINB0374EB
■ Spectral response example
15
[Si APD] S i A V A L A N C H E P H O T O D I O D E S
High-speed, high-sensitivity photodiodes with an internal gain mechanismAPD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage.Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefi nders, FSO (free space optics), scintillation detectors, etc.
1 Short wavelength type 2 Near infrared type
Features Major applications
Excellent linearity with respect to incident light
Low noise
Wide spectral response range
Mechanically rugged
Compact and lightweight
Long life
Low-light-level detection
Analytical instrument
FSO
Optical rangefi nder
Optical fi ber communications
Laser radar
YAG laser detection
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
200 400
55
50
40
30
20
10
45
35
25
15
5
0600 800 1000 1200
Near infrared type(900 nm band, low terminal capacitance)
Near infrared type(low bias operation)
IR-enhanced type(1000 nm band/high sensitivity)
Near infrared type(low temperature coefficient)
Short wavelength type(low bias operation)
(Typ. Ta=25 °C, M=50, λ=650 nm)
Short wavelength type(low terminal capacitance)
KAPDB0096EG KAPDB0162ED
Spectral response Cutoff frequency vs. recommended wavelength
Wavelength (nm)
Cuto
ff f
requ
ency
(M
Hz)
2000
200
400
600
800
1000
400 600 800 1000 1200
High
Low
(Compared using devices with 0.5 mm photosensitive area)
Short wavelength type(low bias operation)
Short wavelength type(low terminal capacitance)
Near infrared type(low bias operation, lowtemperature coefficient)
Near infrared type(1000 nm band/high sensitivity)
Near infrared type(900 nm band, low terminal capacitance)
S i A V A L A N C H E P H O T O D I O D E S
16
Type Recommended wavelength Package Features
Low-bias operation
Low-bias operation
Low temperature coeffi cient
900 nm band, low terminal capacitance
1000 nm band/high sensitivity
Low terminalcapacitance
200 to 650 nm
600 to 800 nm
600 to 800 nm
800 to 1000 nm
900 to 1150 nm
320 to 650 nm
Metal
Metal
Surface mount type
Metal
Metal
Metal
Metal,ceramic
Enhanced sensitivity in the UV to visible range
High sensitivity in near infrared region and low bias voltage operation
Low-cost, miniature and thin package
Easy voltage adjustment due to low temperature coef-fi cient of bias voltage
Enhanced sensitivity in 900 nm band
Enhanced sensitivity in 1000 nm band
These modules consist of an APD, low-noise amplifier, and
bias power supply integrated in a compact package.
Product lineup
APD modules
1Short wavelength type
2Near infrared type
Type Features
Contains a near infrared or short wavelength type APD. FC/SMA fi ber adapters are also provided.
High gain type for detection under low illuminance
Digital temperature-compensation, high-stability APD module
Operates over a wide range of frequencies(up to 1 GHz)
Standard type
High-sensitivity type
High-stability type
High-speed type
Response speed (Hz)
DC
Sens
itivi
ty (
V/W
)
100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G103
104
105
106
107
108
109
DC to 100 kHz-1.5 × 108 V/W
50 kHz to 1 GHz2.5 × 105 V/W
4 types are available accordingto photosensitive area size and
wavelength range.4 kHz to 100 MHz
-1 × 104 V/W
DC to 10 MHz1.5 × 106 V/W
C12703-01
C12703
C5658
C12702 series
DC to 10 MHz2.5 × 106 to 1.25 × 107 V/W
C10508
KACCB0115ED
Sensitivity vs. response speed (APD modules)
17
[MPPC®] M U L T I - P I X E L P H O T O N C O U N T E R S
Compact opto-semiconductors with excellent photon-counting capabilityThe MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fi elds.
Features Major applications
Low afterpulse (compared to our previous products)
Excellent photon-counting capability
Room temperature operation
Low-bias (below 80 V) operation
High gain: 105 to 106
Excellent time resolution
Insensitive to magnetic fi elds
Compact size
Simple readout-circuit operation
MPPC module available (option)
Fluorescence analysis, fl uorescence lifetime measurement
Biological fl ow cytometry
Confocal microscopes
Biochemical sensors
Bioluminescence analysis
Single molecule detection
PET
Scintillation light detection
Cerenkov light detection
What is the MPPC ?The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It is a photon-counting device consisting of multiple APD pixels operating in Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it detects one photon. The signal output from the MPPC is the total sum of the outputs from all APD pixels. The MPPC offers the high performance needed in photon counting and is used in diverse applications for detecting- extremely weak light at the photon-counting level.
1 For general measurement
2 High speed, wide dynamic range
3 For very low-light-level measurement
M U L T I - P I X E L P H O T O N C O U N T E R S
18
The MPPC modules are optical measurement modules capable of measuring light over a
wide range of light levels (10 orders of magnitude) from the photon-counting region up
to the nW (nano watt) region. Hamamatsu offers a wide lineup of MPPC modules includ-
ing cooled modules that give a low dark count and non-cooled modules with a tempera-
ture compensation function for stable measurement.
Measured light level range
Product lineup
MPPC modules
100 101 102 103 104 105 106 107 108 109 1010 1011 1012
10-18 10-17 10-16 10-15 10-14 10-13 10-12 10-11 10-10 10-9 10-8 10-7
(λ=450 nm)
Analog output type
Starter kit
Number of incident photons (cps)
Incident light level (W)
Digital output type
C11209-110Non-cooled type / 10 μm pitch
C11205 seriesNon-cooled type / 50 μm pitch
C12662 seriesTE-cooled type / 50 μm pitch
C12661 seriesTE-cooled type / 50 μm pitch
C11202 seriesTE-cooled type / single pixel
C11208 seriesUSB interface
Type Photosensitive area Pixel pitch Package Spectral response range
1 For general measurement
1 × 1 mm
25 μmCeramic
320 to 900 nm
50 μm100 μm25 μm
Surface mount type50 μm100 μm
3 × 3 mm
25 μmCeramic50 μm
100 μm25 μm
Surface mount type50 μm100 μm
2 High-speed,wide dynamic range
1 × 1 mm
10 μmCeramic
15 μm10 μm
Surface mount type15 μm
3 × 3 mm
10 μmCeramic
15 μm10 μm
Surface mount type15 μm
3 For very low-light-levelmeasurement
1 × 1 mm50 μm Metal
(Two-stage TE cooled)3 × 3 mm
19
Features Major applications
[Photo IC and related products] P H O T O I C
Highly functional devices integrating photodiodes with signal processing circuitsThe photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal process-ing circuit into one package.
1 Schmitt trigger circuit photo IC
6 Photo IC for encoder,Encoder module
7 Photo IC for optical switch
9 Phototransistor
8 Photo IC forlaser beamsynchronousdetection
4 Color sensor
5 Photo IC for optical link
2 Light modulation photo IC 3 Illuminance sensor
Small and lightweight
Highly resistant to noise from electromagnetic induction
High reliability
Offers custom designs for producing optical
sensors to meet specifi c applications.
Merges IC design technology, CMOS circuit
technology, optical device technology, and
packaging technology.
Allows the fabrication of subminiature de-
vices that integrate multiple functions.
Paper detection in offi ce machines (copier, fax machines, etc.)
Optical switch
Light dimmers for liquid crystal panels and large-screen TV, etc.
Color adjustment for display
Plastic optical fi ber communications
Encoder
HAMAMATSU photo IC technology
Simplified external circuitreduces the total cost.
External circuit Minimum hardware Minimum software
Minimizes digital noise.
Responds to sophisticated needs. Delivers high linearity, low noise, and wide dynamic range.
Makes it easy to use photo IC. Simplifies externalinput/output terminals.
Provides spectral responsecharacteristics, etc. optimizedfor specific needs.
Interface
A/D converterAnalog signalprocessing circuit
Digital signalprocessing
circuit
Photosensor
Photo IC
P H O T O I C
20
Product lineup
DigitalUses a 4-element photodiode that can be used to easily confi g-ure an encoder with 2-phase digital output
6Photo IC for encoder,Encoder module
Type Output Features
Digital
Digital
Analog/Digital
Digital
Digital (receiver photo IC)
Digital
Digital
Analog
Photo IC integrates a photodiode, amplifi er, Schmitt trigger cir-cuit and output transistor, etc. into one chip
Employs synchronous optical detection to ensure stable output even under fl uctuating background light
Has spectral response characteristics close to human visual sensitivity
Has sensitivity to red, green and blue light
Photo IC transmitters and receivers for plastic optical fi ber com-munications
Has functions needed for industrial optical switches
For detecting laser beam print-start timing in laser printers and digital copiers
Amplifi es the photocurrent generated by input light. Allows a larger current to be drawn even from a small active area when compared to photodiodes.
HAMAMATSU photo ICs are widely used for many different needs.
1Schmitt trigger circuit photo IC
2 Light modulation photo IC
3 Illuminance sensor
4 Color sensor
5Photo IC for optical link (POF)
7 Photo IC for optical switch
8Photo IC for laser beamsynchronous detection
9 Phototransistor
Photo IC forgeneral use
Photo IC forspecial use
Application examples
Air conditioner: light/dark sensing
Station ticket gate: passenger sensing
Photo IC diode
Clocks: light/dark sensing
Photo IC diode
Light modulation photo IC
Factories
Detection of product passage
Light modulation photo IC,Photo IC for optical switch
Safety devices
Light modulation photo IC,Photo IC for optical switch
Digital copiers /Multifunctional digital office machines
Paper size detection
Light modulation photo IC
Laser origin point detection for writing on print drum
Photo IC for laser beam synchronous detection
Signal transmissionTransmitter/Receiver photo IC for optical link
Remaining paper amount detection
Light modulation photo IC
Display backlight brightness adjustment
Photo IC diode
Mirror and lens positioning
Photo IC for encoder/Encoder module
Color toner contrast detection
Digital color sensor
Sorter leftover paper detection
Light modulation photo IC
Photo IC diode
Photo IC diode
Vending machine: light/dark sensing
Large screen TV: light/dark sensing
Photo IC diode
Photo IC diode
Auto lighting equipment: light/dark sensing Auto hand washer: hand sensing
Boiler: flame monitor
Light modulation photo IC
0.1 eV
InGaAs linear imagesensor (long wavelength type)
1 eV10 eV100 eV1 keV10 keV100 keV
0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm
1 MeV
InGaAs linear/areaimage sensor
NMOS linearimage sensor
CMOS linearimage sensor
CMOS areaimage sensor
Distance image sensor
Back-thinned CCD
Photon energy
Wavelength
Front-illuminated CCDFront-illuminated CCD (windowless type)
NMOS linear image sensor(windowless type)
CCD for X-ray imaging
Back-thinned CCD (windowless type)
Flat panel sensor
Wavelength [nm] =1240
Photon energy [eV]
21
Features Major applications
Example of detectable energy level and spectral response range
[Image sensors] I M A G E S E N S O R S
A wide lineup of image sensors suitable for spectroscopy and measurement applicationsHamamatsu provides various types of image sensors that cover a wide energy level and spectral response range from near infrared (NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred keV.
1 Front-illuminated CCD area/linear image sensor2 Back-thinned CCD area/linear image sensor
3 NMOS linear image sensor
7 Photodiode array with amplifi er 8 X-ray image sensor
4 CMOS linear/areaimage sensor
5 Distance linear/area image sensor 6 InGaAs linear/area image sensor
A wide lineup covering different wavelengths
KMPDC0105EH
Spectrophotometry
Scientifi c measurement
NIR spectrometry
X-ray imaging
Obstacle detection
Security
( )
I M A G E S E N S O R S
22
Product lineup
Spectral response (typical example)
KMPDB0276EB
Qua
ntum
eff
icie
ncy
(%)
Wavelength (nm)
(Typ. Ta=25 °C)
0200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
Back-thinnedtype
Front-illuminated type
Front-illuminated type(NIR high sensitivity)
Back-thinned type(UV high sensitivity)
0.5 1.0 1.5 2.0 2.5 3.00
0.5
1.0
1.5
Wavelength (μm)
Phot
osen
sitiv
ity (
A/W
)
(Typ.)
G9201 to G9204/G9211 to G9214/G9494 series
G9206-256W G9207-256W
G9205-256WG9208-256W
G11135 series
Td=25 °CTd=-10 °CTd=-20 °C
KMIRB0068EB
CCD area image sensor (without window) InGaAs linear image sensor
Product name Features Lineup
1Front-illuminatedCCD area/linear image sensor
Image sensors with low dark current and low noise.
For spectrophotometry For scientifi c measurement
2Back-thinnedCCD area/linear image sensor
Image sensors delivering high quantum effi ciency from visible to VUV region
For spectrophotometryBuilt-in electronic shutter type, High-resolution type, Improved etaloning type, Large full-well type, IR-enhanced type
For scientifi c measurement TDI-CCD area image sensor Fully-depleted back-illuminated CCD area image sensor
3 NMOS linear image sensorImage sensors with high UV-sensitivity and excel-lent output linearity, making them suitable for pre-cision photometry
Current output type (standard type) Current output type (infrared-enhanced type) Voltage output type
4 CMOS linear image sensor
Image sensors integrated with signal process-ing circuits, making them suitable for applications where low power consumption and downsizing of the detector unit are essential
Standard type Variable integration time type High-speed readout type High sensitivity type Digital output type
4 CMOS area image sensorAPS type CMOS area image sensors with high sensitivity in the near infrared region
SXGA format type VGA format type
5 Distance linear/area image sensor
Image sensors designed to measure the distance to an object by TOF method. When used in com-bination with a pulse modulated light source. This sensor outputs phase difference information on the timing that the light is emitted and received.
Distance linear image sensor Distance area image sensor
6 InGaAs linear/area image sensorImage sensors for near infrared region. Built-in CMOS IC allows easy operation.
For NIR spectrometry For DWDM monitor For NIR image detection
7 Photodiode array with amplifi erSensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be confi gured by arranging multiple arrays in a row.
Long and narrow area type For non-destructive inspection
8 X-ray image sensorImage sensors and photodiode arrays delivering high quality X-ray images by coupling FOS (FOP coated with X-ray scintillator) or phosphor sheet.
CCD/CMOS area image sensors for dental imaging
TDI-CCD area image sensors Photodiode arrays with amplifi er for non-destructive inspection
23
Major applications
Product lineup
Type Pixel size(μm)
Active area[(H) × (V) cm]
Frame rate (frames/s) Features
100 12 × 12 17 to 280
100 10 × 7 30 to 265High-speed, high-sensitivity type suitable for CT imaging and panoramic imaging.Supplied without case for assembly into equipment.
100 15 × 0.6 300
505 × 5 to 12 × 12
1 to 4Suitable for imaging of low-energy X-rays and com-patible with X-ray sources with 17 keV Mo target
505 × 5 to 12 × 12
3Active pixel sensor for low-noise readout and com-patible with X-ray below 18 keV
50 to 1005 × 5 to 12 × 12
2 to 7Suitable for use with sealed-off microfocus X-ray sources (50 kVp to 100 kVp)
[Flat panel sensors] F L A T P A N E L S E N S O R S
Capturing high-resolution, high-quality X-ray images in real-timeFlat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in real-time. A fl at panel sensor is made up of a sensor board and a control board, designed for a thin, compact confi guration.
CT imaging/panoramic imaging, biochemical imaging, etc.
Radiography
X-ray diffraction
Non-destructive inspection
1For radiography (rotational type)
2For radiography (biochemical imaging)
3For radiography (X-ray diffraction)
4For non-destructive inspection
2 For radiography (biochemical imaging) 3 For radiography (X-ray diffraction) 4 For non-destructive inspection
1 For radiography (rotational type)
24
Product lineup
Type Lineup
Visible light cut-off type suitable for detection of near infrared light
High IR-sensitivity
Suitable for detection of microscopic spot light such as from a laser diode
Long, narrow type with active area length of 30 mm or more
High-speed response, low dark current, superior position-detection characteristic
Excellent position resolution
Wide spectral response range
High-speed response
Simultaneously detects light intensity and center-of-gravity position
of a spot light
High reliability
Position and angle sensing
Distortion and vibration measurements
Optical rangefi nders
Optical switches
Precise position measurements such as laser
displacement meters
1 One-dimensional PSD
2 Two-dimensional PSD
[PSD (position sensitive detectors)] P O S I T I O N S E N S I T I V E D E T E C T O R S
Light spot position sensors used for distance and angle measurementsA PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability.
1 One-dimensional PSD 2 Two-dimensional PSD
Features Major applications
25
[Infrared detectors] I N F R A R E D D E T E C T O R S
Product lineup to meet various needs for spectral response rangeInfrared detectors are utilized in a wide range of fi elds such as measurement, chemical analysis, industry, agriculture, medicine, physics and chemistry, communications, and aerospace applications.
KIRDB0259EF
1 InGaAs PIN photodiode
5 Two-color detector
4 Thermopile detector
6 Photon drag detector
2 PbS/PbSe
photoconductive
detector
3 InSb photoconductive detector/photovoltaic detector,
InAsSb/InAs photovoltaic detector,
MCT (HgCdTe) photoconductive detector/photovoltaic detector
■ Spectral response (typical example)
Wavelength (μm)
D*
(cm
· H
z1/2/W
)
108
109
1010
1011
1012
1013
1014
1 2 30 4 5 6 7 8 9 17 18 19 20 21 22 23 24 2510 11 12 13 14 15 16
MCT (-60 °C)
PbSe (-20 °C)
InAsSb (-30 °C)
InSb (-196 °C)
PbSe (25 °C)
MCT (-196 °C)
PbS (-20 °C)
PbS (25 °C)
Si (25 °C)
MCT (-196 °C) MCT (-196 °C)
Thermopile detecter
InAs (-196 °C)
InAsSb (-196 °C)
Short wavelength enhanced type InGaAs (25 °C)
Long wavelength type InGaAs (-196 °C)
Long wavelength type InGaAs (25 °C)
Photovoltaic detectorsPhotoconductive detectorsSi thermal detectors
Product name Spectral response range Features Major application
1 InGaAs PIN photodiode
0.5 to 1.7 μm
High-speed response Various types of active areas, arrays and packages available TE-cooled type available
Optical fi ber communications Optical power meter Gas analyzer Water content analyzer NIR (near infrared) photometry
0.9 to 1.7 μm
0.9 to 1.9 μm
0.9 to 2.1 μm
0.9 to 2.6 μm
2 PbS photoconductive detector 1 to 3.2 μm
High detectivity Can be used at room temperatures in a wide range of applications such as radiation ther-mometers and fl ame monitors
Radiation thermometer Flame monitors Water content analyzer Food ingredient analysis Spectrophotometers
2 PbSe photoconductive detector 1 to 5.2 μm
Detects wavelengths up to 5.2 μm Offers higher response speed at room tempera-tures compared to other detectors used in the same wavelength range. Suitable for a wide range of applications such as gas analyzers.
Radiation thermometer Flame monitors Gas analyzer Film thickness gauge
3 InSb photoconductive detector 1 to 6.7 μm Detects wavelengths up to around 6.5 μm, with high sensitivity over long periods due to thermoelectric cooling
Environment measurements(gas analysis, etc.) Radiation thermometer (5 μm band) FTIR IR laser detection
3 InSb photovoltaic detector 1 to 5.5 μm
Suitable for CO2 and SOx (SO, SO2, SO3) gas analysis due to high sensitivity in the 3 to 5 μm band
Covers a spectral response range close to PbSe but offers higher response speed
Radiation thermometer Thermal imaging Remote sensing Gas analyzer FTIR Spectrophotometers3 InAsSb photovoltaic detector 1 to 5.8 μm
Infrared detector in the 5 μm spectral band, with high sensitivity and high reliability
3 InAs photovoltaic detector 1 to 3.8 μm Covers a spectral response range close to PbS but offers higher response speed
Gas analyzer Infrared radiation measurement Infrared spectrophotometry FTIR
3MCT (HgCdTe) photoconductivedetector
1 to 25 μm
Different types of spectral response ranges are provided by changing the composition ratio of HgTe and CdTe.
Available with thermoelectric coolers, cryo-genic dewars
Thermal imaging Remote sensing
FTIR CO2 laser detection Spectrophotometers
3MCT (HgCdTe) photovoltaic detector
1 to 13.5 μm High-speed response Low noise
FTIR Thermal camera Radiation thermometer Spectrophotometers Environmental measurement Astronomy and space observation
4 Thermopile detector 1 to 25 μm Sensors that generate thermoelectromotive force in proportion to the energy level of incident light
Gas analysis CO2 concentration measurement
5Two-colordetector
Si + PbS 0.2 to 3 μm Wide spectral response range from UV to IR Two-color detectors incorporate an infrared-trans-mitting Si photodiode mounted over a PbS detec-tor, PbSe detector or InGaAs PIN photodiode
Spectrophotometers Laser monitors Flame monitors Radiation thermometer
Si + PbSe 0.2 to 4.85 μm
Si + InGaAs 0.32 to 2.55 μm
6 Photon drag detector 10 μm
High-speed detectors with high sensitivity in 10 μm band (for CO2 laser detection)
Room temperature operation with high- speed response
CO2 laser detection Infrared detection
26
Product lineupI N F R A R E D D E T E C T O R S
27
Major applications
Product lineup
Type Features
Si photodiode with a fi lter that corrects the spectral range to have sensitivity only in the vis-ible range
Photo ICs with spectral response characteristics close to human visual sensitivity
Compound semiconductor photosensor that delivers spectral sensitivity close to the human eye without using any fi lters
Exposure meter, illuminometer
Cellular phone backlight dimmer
Energy-saving sensor for large-screen TV, etc.
Light dimmers for liquid crystal panels
Automatic lighting system
Various types of light level measurement
2 Si photodiode
1 Illuminance sensor
3 GaAsP photodiode
[Visible light sensors] V I S I B L E L I G H T S E N S O R S
Spectral response close to that of the human eyeVisible light sensors are broadly used as illuminance sensors.
2 Si photodiode 3 GaAsP photodiode
1 Illuminance sensor
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0200 400 600 800
Wavelength (nm)
1000 1200
Rel
ativ
e se
nsiti
vity
(Typ. Ta=25 °C, VR=5 V)
Human eye sensitivity
KPICB0121EA
■ Spectral response example (photo IC diode)
28
Major applications
Product lineup
Type Features
These are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm).
These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sen-sitive to the blue, green and red regions of the spectrum.
These are color sensors sensitive to red, green, and blue light.Detected signals are output serially as digital data.
These modules are used for monitoring of LCD backlight colors and for simple color detection.
White balance adjustment
Color control, color identifi cation
Portable or mobile equipment
RGB-LCD backlight monitors
Light source color temperature detection
Various types of color detection
1 Si photodiode
2 RGB color photodiode
3 Digital color sensor
4 Color sensor module
[Color sensors] C O L O R S E N S O R S
Small sensor for LCD monitoring and simple color detectionHamamatsu provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors.
1 Si photodiode 2 RGB color photodiode
3 Digital color sensor 4 Color sensor module
Wavelength (nm)
Phot
osen
sitiv
ity (
A/W
)
400 7006003000
0.10
0.20
0.05
0.15
0.25
500 800
(Typ. Ta=25 °C)
Green
Red
Blue
KSPDB0246EA
■ Spectral response example (RGB color photodiode)
29
Product lineup
[LED] L I G H T E M I T T I N G D I O D E S
Infrared LED and red LED with high outputCompared to laser diodes, LEDs offer advantages such as lower cost and longer life. HAMAMATSU has developed and produced various types of LEDs that enhance emission effi ciency via a high output power LED chip mounted on a refl ective package base, which makes the light emitted from the chip edges refl ect towards the front.
4 For FSO (free space optics)
1 For optical switch
5 For optical link 6 SIP type 7 Bullet type
3 For moisture detection2 For optical encoder
High output
Available in various types of packages
Optical switch
Encoder
Light source for moisture meter
Optical rangefi nder
Optical fi ber communications
FSO
Features Major applications
Type Features
1 For optical switchInfrared
Refl ector type High output power
Ball-lens type Narrow directivity, uniform emission pattern
Peripheral electrode type Shadow of wire does not appear in emission pattern.
Red Refl ector type High output power
2 For optical encoderOptimized lens shape allows these LEDs to emit highly collimated beams.High reliability is obtained since these LEDs do not use a current confi nement structure chip.
3 For moisture detection Long wavelength LED with peak emission wavelengths at 1.45 μm
4 For FSOHigh-speed, high output power LED.Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available.
5 For optical link These LEDs are suitable for 50 Mbps and 125 Mbps optical link.
6 SIP type These LEDs are high-power LEDs molded into a miniature, clear plastic package.
7 Bullet type These LEDs are high-power LEDs encapsulated in a bullet-shaped package.
30
Product lineup
Type Features
High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail).
HAMAMATSU provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver module designed for vehicle-mounted VICS (Vehicle Information and Communication System).
These devices are used to monitor laser diodes or DWDM.
These are light receivers and emitters suitable for medium to low speed optical links.
1For high-speed optical fi ber communications
2 For optical data link
3 For FSO
4For optical power and wavelength monitor
[Optical communication devices] O P T I C A L C O M M U N I C A T I O N D E V I C E S
High-speed devices for optical fi ber communications and FSO (free space optics)Hamamatsu provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and short-range, low-speed communications, as well as FSO.
1 For high-speed optical fi ber communications
2 For optical data link
3 For FSO 4 For optical power and wavelength monitor
USBcable
Optical fiber forlight input
PC
Mini-spectrometer
Quartz cell
Light source
[Mini-spectrometers]Integrating an optical system, image sensor and circuitHamamatsu offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and circuit by fabricating the grating section using micromachining techniques.
Features
31
M I N I - S P E C T R O M E T E R S
Evaluation of light source characteristics
Taste analyzers
Water content measurement
Film thickness measurement
Semiconductor process control
Low-light-level measurement such as fl uorescence
measurement
Installation into measurement equipment
2 TM series
1 TG series
3 RC series 4 MS series
High throughput due to transmission grating made of quartz
Highly accurate optical characteristics
No external power supply required:
Uses USB bus power (Non-cooled type, excluding CCD type)
Low noise (Cooled type)
Compact design for easy assembly
Contains a wavelength conversion factor
(Data supplied only with OEM models)
Light to be measured is guided into the entrance port through an optical
fi ber and the spectrum measured with the built-in image sensor is output
through the USB port to a PC for data acquisition. There are no moving
parts inside the unit so stable measurements are obtained at all times. An
optical fi ber that guides light input from external sources allows a fl exible
measurement setup.
Connection example (transmission light measurement)
KACCC0524EA
Major applications
32
M I N I - S P E C T R O M E T E R S
Product lineup
TypeSeries Built-in image sensor Spectral response range Spectral resolution (Spectral response half width)
High sensitivity TG-UV-CCD
High sensitivity TM-UV/VIS-CCD
High sensitivity TM-VIS/NIR-CCD
Small RC-VIS-MOS
Small RC-SWNIR-MOS
Small (OEM model) RC-VIS-MOS
Small (OEM model) RC-SWNIR-MOS
Ultra-compact MS-VIS-MOS
Ultra-compact MS-SWNIR-MOS
High sensitivity TG-SWNIR-CCD II
High resolution TG-UV-CCD
High resolution TM-UV/VIS-CCD
High resolution TM-VIS/NIR-CCD
For NIR TG-NIR-MOS
For NIR (cooled-type) TG-cooled NIR I
For NIR (cooled-type) TG-cooled NIR II
For NIR (cooled-type) TG-cooled NIR III
Wide dynamic range TG-UV-MOS
Wide dynamic range TM-UV/VIS-MOS
Wide dynamic range TM-VIS/NIR-MOS
Trigger-compatible TM-VIS/NIR-MOS II
Wide dynamic range TG-SWNIR-MOS
High resolution TG-RAMAN I
High resolution TG-RAMAN II
3 nm
0.3 nm*
6 nm
8 nm(320 to 900 nm)
3 nm
6 nm
8 nm
8 nm
9 nm
8 nm
5 nm(550 to 900 nm)
5 nm(550 to 1100 nm)
7 nm
7 nm
8 nm
20 nm
* Typical value
1 nm*
1 nm*
12 nm*
20 nm
1 nm*(320 to 900 nm)
200 to 400 nm
200 to 800 nm
320 to 1100 nm
340 to 780 nm
640 to 1050 nm
340 to 750 nm
640 to 1050 nm
500 to 1100 nm
900 to 1700 nm
790 to 920 nm
500 to 600 nm
900 to 1700 nm
1100 to 2200 nm
900 to 2550 nm
Back-thinnedCCD image sensor
Back-thinnedCCD image sensor
Back-thinnedCCD image sensor
Back-thinnedCCD image sensor
Infrared enhanced back-thinnedCCD image sensor
NMOS linear image sensor
InGaAs linear image sensor
CMOS linear image sensor
CMOS linear image sensor
CMOS linear image sensor
CMOS linear image sensorwith amp array
CMOS linear image sensor
Infrared enhanced typeCMOS linear image sensor
CMOS linear image sensor
1 TG series
2 TM series
3 RC series
4 MS series
33
[Opto-semiconductor modules]Modules using opto-semiconductors / Circuits for operating opto-semiconductorsHamamatsu provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us.
Technologies that create opto-semiconductor modules
9 Flame eye
1 MPPC module
5 Photodiode module6 Photosensor amplifi er
11 Sunlight sensor 13 Multichannel detector head
12 Infrared detector module with preamp
4 Mini-spectrometer
3 Radiation detector module
8 PSD signalprocessing circuit
7 PSD module
10 RGB color sensor module
2 APD module
14 Peripheral product for image sensor
O P T O - S E M I C O N D U C T O R M O D U L E S
Photodiode, image sensor,
etc. AmpPhotosensor
LEDLD
Light emitter
Driver
Signal processing(analog/digital)
Opto-semiconductor module configuration example
Opto-semiconductor
Opto-semiconductor
Optical components (filter, lens, etc.)
Interface
Housing
Circuitry
●Our mounting technology combines compactness, high functionality, and low cost.
Optical technology●Optimal optical design for high-performance modules●Use of simulations
●High-precision micromachining●Helps make modular components smaller and modules more functional
MEMS* technology
Opto-semiconductor technology
Software technology
●Optimized for optical devices and applications●Supports high sensitivity, low noise, high speed, and multiple channels
Circuit technology Mounting technology
* Micro-electro-mechanical systems
●The detector, which is the heart of module, uses Hamamatsu opto-semiconductor, which have a long
track record for many years in the fields of analysis, measurement, automobiles, and consumer products.●Custom designs are available to achieve the features you want.
●The sample software makes swift evaluation possible.●USB, RS-232C, and other types of
interfaces are available.
34
O P T O - S E M I C O N D U C T O R M O D U L E S
Product lineup
Products Features Application example
1 MPPC module
The MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD pixels operated in Gei-ger mode. The MPPC module is designed to extract maximum MPPC perfor-mance.
Fluorescence lifetime measurement Biological fl ow cytometry Bioluminescence analysis Low-light-level detection
Analytical instruments
2 APD module
APD modules are high-speed, high-sensitivity photodetectors us-ing an APD (avalanche photodiode). An APD, a low-noise ampli-fi er and a bias power supply are assembled into a compact case. By simply connecting to a low voltage DC power supply, these APD modules allow optical measurements with a S/N dozens of times higher than PIN photodiodes.
Low-light-level detection Optical power meters Laser monitors
3 Radiation detector moduleRadiation detector modules containing a scintillator and MPPC designed to detect gamma rays
Environmental monitoring and mapping
Screening tasks such as incom-ing/outgoing inspections at manufacturing site
4 Mini-spectrometerMini-spectrometers are compact devices that include a grat-ing and other optical elements and an image sensor.
Display color measurement Film thickness measurement Plastic sorting Fluorescence measurement
5 Photodiode modulePhotodiode modules are high-precision photodetectors combining a photodiode and current-to-voltage conversion amp. Dedicated signal processing unit is also provided.
Precision photometry Light source power monitors Illuminometers, color difference meters
6 Photosensor amplifi erThese photosensor amplifi ers are current-to-voltage conver-sion amplifi ers for amplifying photocurrent with low noise.
Precision photometry Optical power meters Laser monitors Plasma monitors
7 PSD modulePSD modules are high-precision position-detectors combining a PSD and current-to-voltage conversion amp. Dedicated signal processing unit is also provided.
Optical axis alignment Rangefi nder
3D measurement Length measurement
8 PSD signal processing circuitThese are signal processing circuits for evaluation of PSDs (posi-tion sensitive detector).
Performance evaluation of PSD
9 Flame eyeThe fl ame eye is a sensor that monitors fl ames in oil boilers and heating equipment.
Flame detection in oil boilers and heaters
Safety devices and alarms for heat generating devices
10 RGB color sensor moduleThe RGB color sensor module was specifically developed to monitor the power of RGB-LEDs.
RGB-LED backlight monitor for TFT-LCD
11 Sunlight sensorSunlight sensors detect the light level of sunlight and ambient light. A photodiode with superb linearity relative to the light level is built in a small case with a connector.
Ambient light detection Automatic lighting sensors
12 Infrared detector module with preampThese modules integrate preamps and various infrared detec-tors. Modules are available for a variety of different wave-length ranges.
Infrared detection
13 Multichannel detector head
Multichannel detector heads incorporate a driver circuit designed for various types of image sensors (CCD area image sensors, InGaAs linear image sensors, NMOS linear image sensors). Con-troller for multichannel detector head is also available.
Spectrophotometer Raman spectroscopy Semiconductor inspection Radiation thermometry
14Peripheral product forimage sensor
Driver circuit and pulse generator that are designed to match the CCD image sensor and CMOS/NMOS/InGaAs linear image sensor types are provided.
Multichannel spectrophotometry
Factory/Research laboratory/Domestic sales office
Main factory (Ichino) Mitsue factory Shingai factory
Entire company
Solid state division
Sendaisales office
Tokyo branch office
Tsukuba labolatoryTsukuba sales office
Osakasales officeNishinihon
sales office
Opto-semiconductors : Main factory (Ichino), Mitsue factory,Shingai factory
Electron tube products : Toyooka factory, Tenno glass works Beijing Hamamatsu photon techniques Ltd. (China)
System products : Joko factory Laser products : Miyakoda factory
Factories
Central research laboratory Tsukuba research laboratory Industries development laboratory
Laboratories
Tokyo sales office Osaka sales office Chubu sales office Sendai sales office Tsukuba sales office Nishinihon sales office
Domestic sales offices
35
4000090732
3813785108
3675180937
3513979235
2654461518
3819684434
0 10000 20000 30000 40000 50000 800007000060000 90000 100000(million yen)
Toyooka factory
Central researchlaboratory
Industriesdevelopmentlaboratory
Miyakoda factory
Joko factory
Tenno glassworks JR Tokaido line
JR TokaidoShinkansen line
Tenryu Riverthe Sea of Enshu
Lake Sanaru Hamamatsustation
LakeHamana
Tomei express way
Hamamatsu IC
Hamamatsu nishi IC
Mikkabi IC
Main factory(Ichino)
Shingaifactory
Mitsuefactory
HeadquartersChubu sales office
Hamamatsu
2008
2009
2010
2011
Annual sales
2012
2013
Organization chart of solid state division
Bussiness Promotion
General Affairs
Management
Administration
Quality Control
Development
LED, NIR photodiode, optical communication deviceThe 11th Dept.
Compound semiconductor wafer processCompound Process Group
Infrared detectorThe 2nd Dept.
ModuleThe 2nd Develop. Group
CMOS integrated circuitThe 3rd, 5th Develop. Group
SoftwareThe 1st Develop. Group
The 1st Mfg.
Si photodiode, Si APD, PSDThe 30th Dept.
Si photodiode for X-ray detection, MPPCThe 3rd Dept.The 2nd Mfg.
Photo IC, Si photodiode, PSD, LED (plastic package)The 36th Dept.The 3rd Mfg.
Mass product assemblyThe 1st Assembly GroupShingai Mfg.
Si wafer processProcess Production GroupSi Wafer Process
MEMS products, SLMThe 51st Dept.The 7th Mfg.
Linear image sensorThe 41st Dept.
Area image sensorThe 34th Dept.
Circuit for image sensorThe 46th Dept.
The 4th Mfg.
Photosensor moduleThe 32nd Dept.
Light measurement module & unitThe 29th Dept.The 5th Mfg.
Flat panel sensorThe 45th Dept.
X-ray image sensorThe 44th Dept.The 6th Mfg.
Assembly, inspectionThe 1st Assembly Group
Production technology & equipment technologyProduction Technology GroupMitsue Mfg.
36
MEMS processMEMS Process Group
MEMS Develop. GroupMEMS
Main ProductsSi photodiodesAPDPhoto ICImage sensorsX-ray flat panel sensorsPSDInfrared detectorsLEDOptical communication devicesAutomotive devicesMini-spectrometers High energy particle/X-ray detectorsOpto-semiconductor modules
Hamamatsu also supplies:Photoelectric tubesImaging tubesLight sourcesImaging and processing systems
Information in this catalogue isbelieved to be reliable. However,no responsibility is assumed forpossible inaccuracies or omissions.Specifications are subject tochange without notice. No patentrights are granted to any of thecircuits described herein.
© 2014 Hamamatsu Photonics K.K.
Quality, technology, and serviceare part of every product.
HAMAMATSU PHOTONICS K.K., Solid State Division1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, JapanTelephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Sales OfficesJAPAN:HAMAMATSU PHOTONICS K.K.325-6, Sunayama-cho, Naka-kuHamamatsu City, 430-8587, JapanTelephone: (81)53-452-2141, Fax: (81)53-456-7889
China:HAMAMATSU PHOTONICS (CHINA) CO., LTD.1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu,Chaoyang District, Beijing 100020, ChinaTelephone: (86)10-6586-6006, Fax: (86)10-6586-2866E-mail: [email protected]
U.S.A.:HAMAMATSU CORPORATIONMain Office360 Foothill Road, P.O. BOX 6910,Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218E-mail: [email protected]
Western U.S.A. Office:Suite 200, 2875 Moorpark Avenue San Jose, CA 95128, U.S.A.Telephone: (1)408-261-2022, Fax: (1)408-261-2522E-mail: [email protected]
United Kingdom, South Africa:HAMAMATSU PHOTONICS UK LIMITEDMain Office2 Howard Court, 10 Tewin Road, Welwyn Garden City,Hertfordshire AL7 1BW, United KingdomTelephone: (44)1707-294888, Fax: (44)1707-325777E-mail: [email protected]
South Africa office:PO Box 1112Buccleuch 2066Johannesburg, South AfricaTelephone/Fax: (27)11-802-5505
France, Portugal, Belgium, Switzerland, Spain:HAMAMATSU PHOTONICS FRANCE S.A.R.L.19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, FranceTelephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10E-mail: [email protected]
Swiss Office:Dornacherplatz 74500 Solothurn, SwitzerlandTelephone: (41)32/625 60 60, Fax: (41)32/625 60 61E-mail: [email protected]
Belgium Office:Axisparc Technology , rue Andre Dumont 7 - 1435 Mont-Saint-Guibert, BelgiumTelephone: (32)10 45 63 34Fax: (32)10 45 63 67E-mail: [email protected]
Spanish Office:C. Argenters, 4 edif 2Parque Tecnologico del Valles E-08290 CERDANYOLA, (Barcelona) SpainTelephone: (34)93 582 44 30Fax: (34)93 582 44 31E-mail: [email protected]
Germany, Denmark, Netherlands, Poland:HAMAMATSU PHOTONICS DEUTSCHLAND GmbHArzbergerstr. 10,D-82211 Herrsching am Ammersee, GermanyTelephone: (49)8152-375-0, Fax: (49)8152-265-8E-mail: [email protected]
Danish Office:Lautruphoj 1-3DK-2750 Ballerup, DenmarkTelephone: (45)70 20 93 69, Fax: (45)44 20 99 10E-mail: [email protected]
Netherlands Office:Televisieweg 2NL-1322 AC Almere, The NetherlandsTelephone: (31)36-5405384, Fax: (31)36-5244948E-mail: [email protected]
Poland Office:02-525 Warsaw,8 St. A. Boboli Str., PolandTelephone: (48)22-646-0016, Fax: (48)22-646-0018E-mail: [email protected]
North Europe and CIS:HAMAMATSU PHOTONICS NORDEN ABMain OfficeTorshamnsgatan 35 16440 Kista, SwedenTelephone: (46)8-509-031-00, Fax: (46)8-509-031-01E-mail: [email protected]
Russian Office:11, Christoprudny Boulevard, Building 1, 101000, Moscow, RussiaTelephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19E-mail: [email protected]
Italy:HAMAMATSU PHOTONICS ITALIA S.R.L.Strada della Moia, 1 int. 620020 Arese, (Milano), ItalyTelephone: (39)02-935 81 733Fax: (39)02-935 81 741E-mail: [email protected]
Rome Office:Viale Cesare Pavese, 43500144 Roma, ItalyTelephone: (39)06-50513454, Fax: (39)06-50513460E-mail: [email protected]
Taiwan:HAKUTO TAIWAN LTD.6F, No.308, Pa teh Road, Sec, 2,Taipei, Taiwan R.O.C.Telephone: (886)2-8772-8910Fax: (886)2-8772-8918
KORYO ELECTRONICS CO., LTD.9F-7, No.79, Hsin Tai Wu Road Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147
Republic of Korea:SANGKI CORPORATIONSuite 431, World Vision BLDG.24-2 Yoido-DongYoungdeungpo-KuSeoul, 150-877Telephone: (82)2-780-8515Fax: (82)2-784-6062
Singapore:HAKUTO SINGAPORE PTE LTD.Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04Kaki Bukit Industrial Estate, Singapore 417938Telephone: (65)67458910, Fax: (65)67418200
Sales Offices
Cat. No. KOTH0001E14Feb. 2014 DNPrinted in Japan (2,500)