nmb2227a - nexperia...nmb2227a 40 v, 600 ma npn/pnp general-purpose transistors 15 september 2016...
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NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors15 September 2016 Product data sheet
1. General descriptionNPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.
2. Features and benefits• General-purpose transistor• High current• Reduces component count on Printed-Circuit Board (PCB)• Reduces pick and place costs• AEC-Q101 qualified
3. Applications• General-purpose switching and amplification• Complementary driver• Half-bridge and full-bridge driver
4. Quick reference data
Table 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
TR1 (NPN)
VCEO collector-emittervoltage
open base - - 40 V
hFE DC current gain VCE = 10 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100 - 300
TR2 (PNP)
VCEO collector-emittervoltage
open base - - -60 V
hFE DC current gain VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100 - 300
Per transistor; for the PNP transistor with negative polarity
IC collector current - - 600 mA
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 2 / 17
5. Pinning information
Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 B1 base TR1
2 E2 emitter TR2
3 B2 base TR2
4 C2 collector TR2
5 E1 emitter TR1
6 C1 collector TR1
1 32
456
TSOP6 (SOT457)
aaa-022995
C1 E1 C2
B1 E2
TR1
TR2
B2
6. Ordering information
Table 3. Ordering informationPackageType number
Name Description Version
NMB2227A TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
7. Marking
Table 4. Marking codesType number Marking code
NMB2227A 3B
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 3 / 17
8. Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
TR1 (NPN)
VCBO collector-base voltage open emitter - 75 V
VCEO collector-emitter voltage open base - 40 V
TR2 (PNP)
VCBO collector-base voltage open emitter - -60 V
VCEO collector-emitter voltage open base - -60 V
Per transistor; for the PNP transistor with negative polarity
VEBO emitter-base voltage open collector - 6 V
IC collector current - 600 mA
ICM peak collector current - 800 mA
IBM peak base current
single pulse; tp ≤ 1 ms
- 200 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW
Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Tamb (°C)-75 17512525 75-25
aaa-023571
200
100
300
400
Ptot(mW)
0
FR4 PCB; standard footprint
Fig. 1. Power derating curve
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 4 / 17
9. Thermal characteristics
Table 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistancefrom junction toambient
in free air [1] - - 625 K/W
Per device
Rth(j-a) thermal resistancefrom junction toambient
in free air [1] - - 417 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 5 / 17
10. Characteristics
Table 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
TR1 (NPN)
VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 10 nAICBO collector-base cut-offcurrent VCB = 60 V; IE = 0 A; Tj = 125 °C - - 10 µA
IEBO emitter-base cut-offcurrent
VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 10 nA
VCE = 10 V; IC = 1 mA; Tamb = 25 °C 50 - -
VCE = 10 V; IC = 10 mA; Tamb = 25 °C 75 - -
VCE = 10 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100 - 300
hFE DC current gain
VCE = 10 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
40 - -
IC = 150 mA; IB = 15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - 300 mVVCEsat collector-emittersaturation voltage
IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - 1 V
IC = 150 mA; IB = 15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
0.6 - 1.2 VVBEsat base-emitter saturationvoltage
IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - 2 V
td delay time - - 15 ns
tr rise time - - 20 ns
ton turn-on time - - 35 ns
ts storage time - - 200 ns
tf fall time - - 60 ns
toff turn-off time
IC = 150 mA; IBon = 15 mA;IBoff = -15 mA; VCC = 10 V;Tamb = 25 °C
- - 250 ns
CC collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C
- - 8 pF
CE emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A;f = 1 MHz; Tamb = 25 °C
- - 25 pF
fT transition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz;Tamb = 25 °C
300 - - MHz
TR2 (PNP)
VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -10 nAICBO collector-base cut-offcurrent VCB = -50 V; IE = 0 A; Tj = 125 °C - - -10 µA
IEBO emitter-base cut-offcurrent
VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -50 nA
VCE = -10 V; IC = -0.1 mA; Tamb = 25 °C 75 - -
VCE = -10 V; IC = -1 mA; Tamb = 25 °C 100 - -
hFE DC current gain
VCE = -10 V; IC = -10 mA; Tamb = 25 °C 100 - -
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 6 / 17
Symbol Parameter Conditions Min Typ Max Unit
VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
100 - 300
VCE = -10 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
50 - -
IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - -400 mVVCEsat collector-emittersaturation voltage
IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - -1.6 V
IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - -1.3 VVBEsat base-emitter saturationvoltage
IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- - -2.6 V
td delay time - - 12 ns
tr rise time - - 30 ns
ton turn-on time - - 40 ns
ts storage time - - 300 ns
tf fall time - - 65 ns
toff turn-off time
IC = -150 mA; IBon = -15 mA;IBoff = 15 mA; VCC = -10 V;Tamb = 25 °C
- - 365 ns
CC collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C
- - 8 pF
CE emitter capacitance VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz;Tamb = 25 °C
- - 30 pF
fT transition frequency VCE = -20 V; IC = -50 mA; f = 100 MHz;Tamb = 25 °C
200 - - MHz
aaa-017357
300
600
900
hFE
0
IC (mA)10-1 1031021 10
(1)
(2)
(3)
VCE = 10 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 2. NPN transistor: DC current gain as a functionof collector current; typical values
VCE (V)0 1084 62
aaa-017359
0.3
0.6
0.9
IC(A)
0.0
IB = 13 mA11.7 mA10.4 mA
9.1 mA7.8 mA 6.5 mA
5.2 mA3.9 mA
2.6 mA
1.3 mA
Tamb = 25 °C
Fig. 3. NPN transistor: Collector current as a functionof collector-emitter voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 7 / 17
aaa-017361
0.4
0.6
0.2
0.8
1.0
VBE(V)
0.0
IC (mA)10-1 1031021 10
(1)
(2)
(3)
VCE = 10 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C
Fig. 4. NPN transistor: Base-emitter voltage as afunction of collector current; typical values
aaa-017362
0.6
0.8
0.4
1.0
1.2
VBEsat(V)
0.2
IC (mA)10-1 1031021 10
(1)
(2)
(3)
IC/IB = 10(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C
Fig. 5. NPN transistor: Base-emitter saturation voltageas a function of collector current; typicalvalues
aaa-017363
IC (mA)10-1 1031021 10
10-1
1
VCEsat(V)
10-2
(1)
(2)
(3)
IC/IB = 20(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 6. NPN transistor: Collector-emitter saturationvoltage as a function of collector current;typical values
aaa-017364
IC (mA)10-1 1031021 10
10-1
1
VCEsat(V)
10-2
(1)
(2)
(3)
Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10
Fig. 7. NPN transistor: Collector-emitter saturationvoltage as a function of collector current;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 8 / 17
aaa-014480
200
100
300
400
hFE
0
IC (mA)-10-1 -103-102-1 -10
(1)
(2)
(3)
VCE = -10 V(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 8. PNP transistor: DC current gain as a functionof collector current; typical values
VCE (V)0 -10-8-4 -6-2
aaa-014481
-0.4
-0.6
-0.2
-0.8
-1
IC(A)
0
-2
-4
-6-8
-10-12
-14-16
IB = -20 mA
-18
Tamb = 25 °C
Fig. 9. PNP transistor: Collector current as a functionof collector-emitter voltage; typical values
aaa-014482
-0.4
-0.8
-1.2
VBE(V)
0
IC (mA)-10-1 -103-102-1 -10
(1)
(2)
(3)
VCE = -10 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C
Fig. 10. PNP transistor: Base-emitter voltage as afunction of collector current; typical values
aaa-014483
-0.6
-0.8
-0.4
-1.0
-1.2
VBEsat(V)
-0.2
IC (mA)-10-1 -103-102-1 -10
(3)
(2)
(1)
IC/IB = 10(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C
Fig. 11. PNP transistor: Base-emitter saturation voltageas a function of collector current; typicalvalues
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 9 / 17
aaa-014484
IC (mA)-10-1 -103-102-1 -10
-10-1
-1
VCEsat(V)
-10-2
(1)(2)
(3)
IC/IB = 20(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 12. PNP transistor: Collector-emitter saturationvoltage as a function of collector current;typical values
aaa-014699
IC (mA)-10-1 -103-102-1 -10
-10-1
-1
VCEsat(V)
-10-2
(1)
(2)
(3)
Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10
Fig. 13. PNP transistor: Collector-emitter saturationvoltage as a function of collector current;typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 10 / 17
11. Test information
006aaa003
IBon (100 %)
IB
input pulse(idealized waveform)
IBoff
90 %
10 %
IC (100 %)
IC
tdton
90 %
10 %
tr
output pulse(idealized waveform)
tf
t
tstoff
Fig. 14. TR1 (NPN): Transistor switching time definition
RC
R2
R1
DUT
mlb826
Vo
RB(probe)450 Ω
(probe)450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 15. TR1 (NPN): Test circuit for switching times
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 11 / 17
006aaa266
- IBon (100 %)
- IB
input pulse(idealized waveform)
- IBoff
90 %
10 %
- IC (100 %)
- IC
tdton
90 %
10 %
tr
output pulse(idealized waveform)
t f
t
ts
toff
Fig. 16. TR2 (PNP): Transistor switching time definition
RC
R2
R1
DUT
mgd624
Vo
RB(probe)450 Ω
(probe)450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 17. TR2 (PNP): Test circuit for switching times
Quality informationThis product has been qualified in accordance with the Automotive Electronics Council (AEC)standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 12 / 17
12. Package outline
3.02.5
1.71.3
3.12.7
pin 1 index
1.9
0.260.10
0.400.25
0.95
1.10.9
0.60.2
1 32
456
14-10-03Dimensions in mm
Fig. 18. Package outline TSOP6 (SOT457)
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
2.8253.3
0.45(6×)
0.55(6×)
0.7(6×)
0.8(6×)
2.4
0.95
0.95
Dimensions in mm
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 13 / 17
sot457_fw
5.3
5.05
1.45(6×)
0.45(2×)
1.5(4×)
2.85
1.475
1.475solder lands
solder resist
occupied area
preferred transportdirection during soldering
Dimensions in mm
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 14 / 17
14. Revision history
Table 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes
NMB2227A v.1 20160915 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 15 / 17
15. Legal information
Data sheet status
Documentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
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Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makesno representation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
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© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 16 / 17
TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors
NMB2227A All information provided in this document is subject to legal disclaimers.
Product data sheet 15 September 2016 17 / 17
16. Contents
1. General description......................................................12. Features and benefits.................................................. 13. Applications.................................................................. 14. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Marking..........................................................................28. Limiting values............................................................. 39. Thermal characteristics............................................... 410. Characteristics............................................................511. Test information....................................................... 1012. Package outline........................................................ 1213. Soldering................................................................... 1214. Revision history........................................................1415. Legal information..................................................... 15
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 15 September 2016