njg1138ha8 900mhz band lna gaas mmic

- 1 - Ver.2017-09-25

NJG1138HA8

900MHz Band LNA GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE

The NJG1138HA8 is a low noise amplifier designed for UMTS and LTE

low band applications. The NJG1138HA8 has two gain state which are

high gain mode and low gain mode. The NJG1138HA8 features high gain,

low noise figure and high IP3.

An Ultra-small and thin USB6-A8 package is adopted.

APPLICATIONS

UMTS and LTE Low band applications Mobile phone, Data card, modem and others mobile device applications 700MHz Band application* FEATURES

Low operating voltage +2.8V typ.

Low control voltage +1.8V typ.

Low current consumption 2.3mA typ. @VCTL=1.8V

10μA typ. @VCTL=0V

High gain 16.0dB typ. @VCTL=1.8V, fRF =942.5MHz

Low noise figure 1.4dB typ. @VCTL=1.8V, fRF =942.5MHz

Input power at 1dB gain compression point -8.5dBm typ. @VCTL=1.8V, fRF =942.5MHz

+16.0dBm typ. @VCTL=0V, fRF=942.5MHz

High input IP3 0dBm typ. @VCTL=1.8V, fRF =942.5MHz

+14dBm typ. @VCTL=0V, fRF=942.5MHz

Small package size USB6-A8 (Package size: 1.0mmx1.2mmx0.38mm typ.)

Lead-free and halogen-free PIN CONFIGURATION

TRUTH TABLE

“H”=VCTL(H), “L”=VCTL(L)

VCTL LNA Mode

H High Gain Mode

L Low Gain Mode

Note: Specifications and description listed in this datasheet are subject to change without notice.

Pin Connection 1. VCTL 2. RFOUT 3. GND 4. RFIN 5. GND 6. NC (GND)

NJG1138HA8

13 RFIN

Logic Circuit

RFOUT

GND

Bias Circuit

2

3

1

4

6

5 VCTL GND

NC(GND)

*Note: Please check the Application Note for 700MHz Band

- 2 -

NJG1138HA8

ABSOLUTE MAXIMUM RATINGS

Ta=+25°C, Zs=Zl=50

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Supply voltage VDD 5.0 V

Control voltage VCTL 5.0 V

Input power PIN +15 dBm

Power dissipation PD on PCB board, Tjmax=150°C 150 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C

ELECTRICAL CHARACTERISTICS 1 (DC)

(General Conditions: VDD=2.8V, Ta=+25oC)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating voltage VDD 2.5 2.8 3.6 V

Control voltage (High) VCTL(H) VCTL terminal 1.36 1.8 3.6 V

Control voltage (Low) VCTL(L) VCTL terminal 0 0 0.3 V

Operating current1 (High Gain Mode)

IDD1 RF OFF, VCTL=1.8V - 2.3 4.0 mA

Operating current2 (Low Gain Mode)

IDD2 RFOFF, VCTL=0V - 10 45 μA

Control current ICTL RF OFF, VCTL=1.8V - 5.5 8.5 μA

NJG1138HA8

- 3 -

ELECTRICAL CHARACTERISTICS 2 (High Gain Mode)

(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)


Small signal gain 1 Gain1 Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB)

14.5 16.0 17.5 dB

Noise figure 1 NF1 Exclude PCB and connector losses (input:0.07dB)

- 1.4 1.7 dB

Input power at 1dB gain compression point 1

P-1dB(IN)1 -16.0 -8.5 - dBm

3rd order Input Intercept Point 1

IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

-7.0 0 - dBm

RF IN VSWR 1 VSWRI 1 - 1.8 2.3 -

RF OUT VSWR 1 VSWRo1 - 2.2 2.7 -

ELECTRICAL CHARACTERISTICS 3 (Low Gain Mode)

(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)


Small signal gain 2 Gain2 Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB)

-4.5 -3.0 -2.0 dB

Noise figure 2 NF2 Exclude PCB and connector losses (input:0.07dB)

- 3.0 6.0 dB

Input power at 1dB gain compression point 1

P-1dB(IN)2 +4.5 +16.0 - dBm

3rd order Input Intercept Point 2

IIP3_2 f1=fRF, f2=fRF+100kHz, Pin=-20dBm

+2.0 +14.0 - dBm

RF IN VSWR 2 VSWRI 2 - 1.4 2.0 -

RF OUT VSWR 2 VSWRo2 - 1.6 2.2 -

- 4 -

NJG1138HA8

TERMINAL INFORMATION

Notes: Ground terminal (No.3 and 5) and NC terminal (No.6) should be connected with the PCB ground

for good RF performance.

No. SYMBOL DESCRIPTION

1 VCTL Gain control port. Inputting a logic-high, the LNA turn at high gain mode. Inputting a logic-low, the LNA turn at low gain mode.

2 RFOUT RF output terminal. Requires an external matching components. This terminal should be connected a DC blocking capacitor C1.

3 GND Ground terminal. Connect to the PCB ground plane.

4 RFIN RF input terminal. Requires an external matching components.

5 GND Ground terminal. Connect to the PCB ground plane.

6 NC

(GND) No connected terminal. This terminal is not connected with internal circuit. Connect to the PCB ground plane.

NJG1138HA8

- 5 -

ELECTRICAL CHARACTERISTICS (High Gain Mode)


-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

NJG1138HA8 @High Gain

Pout vs. Pin(f=942.5MHz)

Pin (dBm)

PoutPo

ut

(dB

m)

P-1dB(IN)=-7.7dBm

-5

0

5

10

15

20

-40 -30 -20 -10 0 10


Gain, IDD vs. Pin(f=942.5MHz)

0

2

4

6

8

10

Pin (dBm)

IDD

Ga

in (

dB

)

P-1dB(IN)=-7.7dBm

Gain

IDD (

mA

)

0

0.5

1

1.5

2

2.5

3

3.5

4

4

6

8

10

12

14

16

18

20

800 850 900 950 1000 1050 1100

NF

(d

B)

Ga

in (

dB

)

frequency (MHz)

NF

Gain

NJG1138HA8@High Gain

NF, Gain vs. frequency(f=800~1100MHz)

(Exclude PCB, Connector Losses)

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10


Pout, IM3 vs. Pin(f1=942.5MHz, f2=f1+100kHz)

Pin (dBm)

IM3

Po

ut,

IM

3 (

dB

m)

IIP3=-0.4dBm

Pout

10

11

12

13

14

15

16

17

18

900 920 940 960 980 1000


OIP3, IIP3 vs. frequency(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm)

-2

-1

0

1

2

3

4

5

6

frequency (MHz)

IIP3

OIP

3 (

dB

m) OIP3

IIP

3 (

dB

m)

0

5

10

15

20

0 5 10 15 20


k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k f

ac

tor

- 6 -

NJG1138HA8



10

11

12

13

14

15

16

17

18

2 2.5 3 3.5 4 4.5


Gain, NF vs. VDD

(f=942.5MHz)

0

0.5

1

1.5

2

2.5

3

3.5

4

VDD (V)

Gain

Ga

in (

dB

)

NF NF

(d

B)


11

12

13

14

15

16

17

18

19

2 2.5 3 3.5 4 4.5


OIP3, IIP3 vs. VDD

(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)

-3

-2

-1

0

1

2

3

4

5

VDD (V)

OIP3

OIP

3 (

dB

m)

IIP

3 (

dB

m)

IIP3

-10

-9

-8

-7

-6

-5

-4

-3

-2

2 2.5 3 3.5 4 4.5


P-1dB(IN) vs. VDD

(f=942.5MHz)

VDD (V)

P-1dB(IN)

P-1

dB

(IN

) (d

Bm

)

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.5 3 3.5 4 4.5


VSWRi, VSWRo vs. VDD

(f=942.5MHz)

VDD (V)

VSWRi

VS

WR

i, V

SW

Ro

VSWRo

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.5 3 3.5 4 4.5


IDD vs. VDD

(RF OFF)

VDD (V)

IDD

IDD (

mA

)

NJG1138HA8

- 7 -


(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , with application circuit)

11

12

13

14

15

16

17

18

19

-60 -40 -20 0 20 40 60 80 100


Gain, NF vs. Temperature(f=942.5MHz)

0

0.5

1

1.5

2

2.5

3

3.5

4

Temperature (oC)

Gain

Ga

in (

dB

)

NF

NF

(d

B)


10

11

12

13

14

15

16

17

18

-60 -40 -20 0 20 40 60 80 100


OIP3, IIP3 vs. Temperature(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)

-4

-3

-2

-1

0

1

2

3

4

Temperature (oC)

OIP3

OIP

3 (

dB

m)

IIP

3 (

dB

m)

IIP3

-16

-14

-12

-10

-8

-6

-4

-2

0

-60 -40 -20 0 20 40 60 80 100


P-1dB(IN) vs. Temperature(f=942.5MHz)

Temperature (oC)

P-1dB(IN)

P-1

dB

(IN

) (d

Bm

)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100


VSWRi, VSWRo vs. Temperature(f=942.5MHz)

Temperature (oC)

VSWRi

VS

WR

i, V

SW

Ro

VSWRo

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100


IDD vs. Temperature(RF OFF)

Temperature (oC)

IDD

IDD (

mA

)

- 8 -

NJG1138HA8



S11, S22

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

S21, S12

NJG1138HA8

- 9 -

ELECTRICAL CHARACTERISTICS (Low Gain Mode)


-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

NJG1138HA8 @Low Gain

Pout vs. Pin(f=942.5MHz)

Pin (dBm)

Pout

Po

ut

(dB

m)

P-1dB(IN)=+16.1dBm

-14

-12

-10

-8

-6

-4

-2

-40 -30 -20 -10 0 10 20


Gain, IDD vs. Pin(f=942.5MHz)

0

40

80

120

160

200

240

Pin (dBm)

IDD

Ga

in (

dB

)

P-1dB(IN)=+16.1dBm

Gain

IDD (

uA

)

0

2

4

6

8

10

-12

-10

-8

-6

-4

-2

800 850 900 950 1000 1050 1100

NF

(d

B)

Ga

in (

dB

)

frequency (MHz)

NF

Gain

NJG1138HA8@Low Gain

NF, Gain vs. frequency(f=800~1100MHz)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20


Pout, IM3 vs. Pin(f1=942.5MHz, f2=f1+100kHz)

Pin (dBm)

IM3

Po

ut,

IM

3 (

dB

m)

IIP3=+16.7dBm

Pout

4

6

8

10

12

14

16

900 920 940 960 980 1000


OIP3, IIP3 vs. Pin(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm)

12

14

16

18

20

22

24

frequency (MHz)

IIP3

OIP

3 (

dB

m)

OIP3

IIP

3 (

dB

m)

0

5

10

15

20

0 5 10 15 20


k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k f

ac

tor

- 10 -

NJG1138HA8



-6

-5

-4

-3

-2

-1

0

1

2

2 2.5 3 3.5 4 4.5


Gain, NF vs. VDD

(f=942.5MHz)

-2

-1

0

1

2

3

4

5

6

VDD (V)

Gain

Ga

in (

dB

)

NF

NF

(d

B)


8

10

12

14

16

18

20

22

24

2 2.5 3 3.5 4 4.5


OIP3, IIP3 vs. VDD

(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)

4

6

8

10

12

14

16

18

20

VDD (V)

OIP3

OIP

3 (

dB

m)

IIP

3 (

dB

m)

IIP3

12

13

14

15

16

17

18

19

20

2 2.5 3 3.5 4 4.5


P-1dB(IN) vs. VDD

(f=942.5MHz)

VDD (V)

P-1dB(IN)

P-1

dB

(IN

) (d

Bm

)

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.5 3 3.5 4 4.5


VSWRi, VSWRo vs. VDD

(f=942.5MHz)

VDD (V)

VSWRiVS

WR

i, V

SW

Ro

VSWRo

2

4

6

8

10

12

14

16

18

2 2.5 3 3.5 4 4.5


IDD vs. VDD

(RF OFF)

VDD (V)

IDD

IDD (

uA

)

NJG1138HA8

- 11 -


(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , with application circuit) 1

-9

-8

-7

-6

-5

-4

-3

-2

-1

-60 -40 -20 0 20 40 60 80 100


Gain, NF vs. Temperature(f=942.5MHz)

1

2

3

4

5

6

7

8

9

Temperature (oC)

Gain

Ga

in (

dB

)

NF

NF

(d

B)


8

10

12

14

16

18

20

22

24

-60 -40 -20 0 20 40 60 80 100


OIP3, IIP3 vs. Temperature(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)

4

6

8

10

12

14

16

18

20

Temperature (oC)

OIP3

OIP

3 (

dB

m)

IIP

3 (

dB

m)

IIP3

6

8

10

12

14

16

18

20

22

-60 -40 -20 0 20 40 60 80 100


P-1dB(IN) vs. Temperature(f=942.5MHz)

Temperature (oC)

P-1dB(IN)

P-1

dB

(IN

) (d

Bm

)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100


VSWRi, VSWRo vs. Temperature(f=942.5MHz)

Temperature (oC)

VSWRiVS

WR

i, V

SW

Ro

VSWRo

2

4

6

8

10

12

14

16

18

-60 -40 -20 0 20 40 60 80 100


IDD vs. Temperature(RF OFF)

Temperature (oC)

IDD

IDD (

uA

)

- 12 -

NJG1138HA8



S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

NJG1138HA8

- 13 -

APPLICATION CIRCUIT

TEST PCB LAYOUT

Parts ID Comments

L1, L2 Murata LQP03T Series

L3 TDK MLK0603 Series

C1, C2 Murata GRM03 Series

PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm

VCTL

RF OUT RF IN

VDD

L1 C1

L2 L3

C2

(Top View)

(Top View)

L1 12nH

L2 8.2nH

L3 10nH

C1 2pF

C2 0.01uF

RF OUT

VDD

RFIN

VCTL

13

RFIN

Logic Circuit

RFOUT

GND

Bias Circuit

2

3

1

4

6

5

VCTL GND

NC(GND)

1Pin Index

- 14 -

NJG1138HA8

PACKAGE OUTLINE (USB6-A8)

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material.

Do NOT eat or put into mouth.

Do NOT dispose in fire or break up this product.

Do NOT chemically make gas or powder with this product.

To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.

[CAUTION] The specifications on this databook are only

given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

Photo resist coating

TERMINAL TREAT :Au Substrate :Glass epoxy Molding material :Epoxy resin UNIT :mm WEIGHT :1.1mg

0.2 (MIN0.15)

1.20

.05

0.8

0.4

0.20.04

6 R0.05

5 1

4 2

3

0.4

1.00.05

0.20.07

0.20

.04

0.6

0.10.05

C0.1

0.3

80

.06

0.0

38

-0.0

09

+0

.012

S 0.03

S

njg1138ha8 900mhz band lna gaas mmic

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