motherboard pcbjohns/ece334/lecture_notes/... · 2007-01-12 · motherboard pcb. 0: introduction...
TRANSCRIPT
![Page 1: Motherboard PCBjohns/ece334/lecture_notes/... · 2007-01-12 · Motherboard PCB. 0: Introduction CMOS VLSI Design Slide 2 Surface Mount PCB. 0: Introduction CMOS VLSI Design Slide](https://reader035.vdocuments.mx/reader035/viewer/2022062603/5f27b18527b5464d433c3593/html5/thumbnails/1.jpg)
0: Introduction Slide 1CMOS VLSI Design
Motherboard PCB
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0: Introduction Slide 2CMOS VLSI Design
Surface Mount PCB
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0: Introduction Slide 3CMOS VLSI Design
Surface Mount Package
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0: Introduction Slide 4CMOS VLSI Design
Chip Manufacturing
Single dieWafer
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0: Introduction Slide 5CMOS VLSI Design
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0: Introduction Slide 6CMOS VLSI Design
Inverter Mask SetTransistors and wires are defined by masksCross-section taken along dashed line
GND VDD
Y
A
substrate tap well tapnMOS transistor pMOS transistor
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0: Introduction Slide 7CMOS VLSI Design
Inverter Cross SectionSubstrate must be tied to GND and n-well to VDD
Metal to lightly-doped semiconductor forms poor connection called Shottky DiodeUse heavily doped well and substrate contacts / taps
n+
p substrate
p+
n well
A
YGND VDD
n+p+
substrate tap well tap
n+ p+
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0: Introduction Slide 8CMOS VLSI Design
Detailed Mask ViewsSix masks– n-well– Polysilicon– n+ diffusion– p+ diffusion– Contact– Metal
Metal
Polysilicon
Contact
n+ Diffusion
p+ Diffusion
n well
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0: Introduction Slide 9CMOS VLSI Design
LayoutChips are specified with set of masksMinimum dimensions of masks determine transistor size (and hence speed, cost, and power)Feature size f = distance between source and drain– Set by minimum width of polysilicon
Feature size improves 30% every 3 years or soNormalize for feature size when describing design rulesExpress rules in terms of λ = f/2– E.g. λ = 0.3 µm in 0.6 µm process
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0: Introduction Slide 10CMOS VLSI Design
Simplified Design RulesConservative rules to get you started
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0: Introduction Slide 11CMOS VLSI Design
Inverter LayoutTransistor dimensions specified as Width / Length– Minimum size is 4λ / 2λ, sometimes called 1 unit– In f = 0.6 µm process, this is 1.2 µm wide, 0.6 µm
long
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0: Introduction Slide 12CMOS VLSI Design
Inverter (2nd example)
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0: Introduction Slide 13CMOS VLSI Design
Example: NAND3Horizontal N-diffusion and p-diffusion stripsVertical polysilicon gatesMetal1 VDD rail at topMetal1 GND rail at bottom32 λ by 40 λ
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0: Introduction Slide 14CMOS VLSI Design
Stick DiagramsStick diagrams help plan layout quickly– Need not be to scale– Draw with color pencils or dry-erase markers
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0: Introduction Slide 15CMOS VLSI Design
Wiring TracksA wiring track is the space required for a wire– 4 λ width, 4 λ spacing from neighbor = 8 λ pitch
Transistors also consume one wiring track
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0: Introduction Slide 16CMOS VLSI Design
Well spacingWells must surround transistors by 6 λ– Implies 12 λ between opposite transistor flavors– Leaves room for one wire track
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0: Introduction Slide 17CMOS VLSI Design
Example: O3AISketch a stick diagram for O3AI– ( )Y A B C D= + +