mixed-signal ic design notes set 1: quick summary of device …€¦ · power supply resonances;...
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Mixed-Signal IC Design Notes set 1:
Quick Summary of Device Models
Mark RodwellUniversity of California, Santa Barbara
[email protected] 805-893-3244, 805-893-3262 fax
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Background / Review
notes. online ECE145a therefer to please required, is detailgreater If
parametersport -2 modelsct Interconne
models Transistor n.informatiokey review Quickly
ECE145Ain covered wasmaterial This
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Transmission Lines
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Transmission Lines for On-Wafer Wiring
H
W microstrip line
0V
+V
geometry voltages currents
I
I
ADS use how to learn :ipsrelationsh eapproximat are These
light. of speed theis where
: velocitynpropagatio
and 377 where
:impedance sticcharacteri
0
0
c
cv
WHHZ
r
ro
ε
ηε
η
=
Ω≈
+≅
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Transmission Lines: Waves, Voltage, Current
Ldz
LZCdzgenV
sZ
velocitynpropagatio /1
and impedance sticcharacteri /
where
currents wavereverse and forward)/()/(),(
voltages wavereverse and forward )/()/(),(
LCv
CLZ
ZvztV
ZvztVtzI
vztVvztVtzV
o
oo
=
=
+−
−=
++−=−+
−+
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Reflections
( )( )
( )( )
tcoefficien ion transmisssource and
tcoefficien reflection source 11 where
:line of beginningAt
tcoefficien reflection load 11 where
:line of endAt
so
os
os
ossgenss
ol
olll
ZZZT
ZZZZVTVV
ZZZZVV
+=
+−
=Γ+Γ=
+−
=ΓΓ=
−+
+−
LZgenV
sZ
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Pulse Reflections on Transmission Lines
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Relating Lumped and Distributed Circuits
00 / , ZCZL ττ ==
model eApproximat
charging.circuit RCinductorneglect
)||()/(
→→
<<+ CRRRRL sLsL
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Short Tramission Lines Can Be Modeled as L's and C's
00 / , ZCZL ττ ==
inductor anely approximat. small , large
:line -High 0
→CL
Z
capacitor.a ely approximat. small , large
:line -Low 0
→LC
Z
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Skin effect loss
periphery. carrying-current effective theis P where,)1(1
lengthunit per resistance series added has Line
ty.conductivi theis where2/
depth skin oneby conductor thepenetratesCurrent
δσ
σωµσδ
jP
Zsurface+
=
=
H
W
~W +2H
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
package resonanceand grounding
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
What is Ground Bounce ?
ADC digitalsections
inputbuffer
ground returncurrents
Lground
∆Vingroundbouncenoise
"Ground" simply means a reference potential shared between many circuit paths.
To the extent that it has nonzero impedance, circuits will couple in unexpected ways
RFI, resonance, oscillation, frequently result from poor ground systems
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Ground Bounce on an IC: break in a ground plane
signal line
signal line
ground plane
line 1
“ground”
line 2
“ground”
common-lead inductance
coupling / EMI due to poor ground system integrity is common in high-frequency systemswhether on PC boards...or on ICs.
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Ground Bounce: IC Packaging with Top-Surface-Only Ground
Bond wire inductance aggravates the effect: resonates with through-wafer capacitance at 5-20 GHz
Peripheral grounding allows parallel plate mode resonancedie dimensions must be <0.4mm at 100GHz
IC: parallel-plane transmission line
peripheralbond inductances
peripheralbond inductances
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
power-supply resonance
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Power Supply Resonance
onbondCLf π2/1=
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Power Supply Resonances; Power Supply Damping
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100
pow
er s
uppl
y im
peda
nce,
Ohm
s
Frequency (GHz)
90 GHz--local resonance between power supply capacitance and supply lead inductance
~N*5GHz resonances--global standing wave on power supply bus
Power supply is certain to resonate: we must model, simulate, and add dampling during design.
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Standard cell showing power buses
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Interconnects:Summary,
Design Strategy
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
fewer breaks in ground plane than CPW
IC Interconnects -- Thin-Film Microstrip
narrow line spacing → IC density
... but ground breaks at device placements
still have problem with package grounding
thin dielectrics → narrow lines→ high line losses→ low current capability→ no high-Zo lines
H
W
+ HWHZ
r
oo 2/1~
εη
...need to flip-chip bond
no substrate radiation, no substrate losses
InP mm-wave PA (Rockwell)
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
No breaks in ground plane
IC Interconnects -- Inverted Thin-Film Microstrip
narrow line spacing → IC density
... no ground breaks at device placements
still have problem with package grounding
thin dielectrics → narrow lines→ high line losses→ low current capability→ no high-Zo lines
...need to flip-chip bond
Some substrate radiation / substrate losses
InP 150 GHz master-slave latch
InP 8 GHz clock rate delta-sigma ADC
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
VLSI Interconnects with Ground Integrity & Controlled Zo
negligible breaks in ground plane
narrow line spacing → IC density
negligible ground breaks @ device placements
still have problem with package grounding
thin dielectrics → narrow lines→ high line losses→ low current capability→ no high-Zo lines
...need to flip-chip bond
no substrate radiation, no substrate losses
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
No clean ground return ? → interconnects can't be modeled !
35 GHz static dividerinterconnects have no clear local ground returninterconnect inductance is non-localinterconnect inductance has no compact model
InP 8 GHz clock rate delta-sigma ADC
8 GHz clock-rate delta-sigma ADCthin-film microstrip wiringevery interconnect can be modeled as microstripsome interconnects are terminated in their Zosome interconnects are not terminated...but ALL are precisely modeled
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Active Devices: Bipolar Transistors
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
HBT Physical Structure
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Physical structure, symbolic
baseBC gradecollector
N+ sub collector
semi-insulating InP substrate
emitter
emittercontact
base contact
cT
b,contWeWebW
underWN- drift collector
base contact
collector contact
bT
cW
EB grade
drawing lar toperpendicu LengthStripe Device EL=
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
0
5
10
15
20
0 1 2 3 4V
ce
mA
/µm
2
Bipolar Transistor: DC characteristics: common-emitter
Vbr,ceo
bc II β=
10-12
10-10
10-8
10-6
10-4
10-2
0 0.25 0.5 0.75 1
I c , I
b (A)
Vbe
(V)
Ic
Ib
satceV ,
maxJ
ion.documentatproject design in ninformatio More
density.power Maximumeffect,Kirk :byset is This.density current operating maximuma have HBTs maxJ
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
HBT hybrid-Pi equivalent-circuit model
cbf τ+τ=τ
Ccbi
Ccbx
Rbe
RbbB C
ERex
Rc
Vbe
CjeCbe,diff =gmτ f
gmVbee-jωτc
mobe gR /β=
)exp( cmom jgg ωτ−=
C
nkTqIg cmo /=
( )( ) ./1 toproportion in vary ,,,
, toproportion in vary ,, : lengthemitter of fingers HBT Given
max, Efingerccexbb
Efingercbxcbije
Efinger
LNIRRRLNCCC
LN
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Active Devices: MOSFETs
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
MOSFETS
N+ source N+ drain
source contact (silicide) drain contact (silicide)
N+ polygate
gate metal(silicide) dielectric
sidewall
gate oxide
P substrate
S D S D S D S
G
G
Wg
Cross-Section Layout (multi-finger)
P substrate
gatedielectric
N+polysilicongate
inversionlayer
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
MOSFET DC Characteristics
ID
VDS
increasingVGS
gthgsgoxD LVVWcI 2/)(current limitedmobility
2, −=
−
µµ
)(current limitedvelocity
, thgssatgoxvD VVvWcI −=−
1
Expression dGeneralize
,
2
,
=
+
µD
D
vD
D
II
II
Id
VgsVth
mobility-limited
velocity-limited
: voltageknee thenlarger tha voltagesdrainFor
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Knee Voltage: Mobility-Limited Case
VGD=Vth
regionscurrent -constant and Ohmic the betweenboundary thedefines voltageknee The
ID
VDS
increasingVGS
Ohm
ic constant-current
thgsdsdg VVVV −=−= whenoccurs curve in knee the
regime, limited-mobility theIn
IDRDVGD=Vth
IDRS
s.resistance drain & source parasitic theacross drops by voltage increasedfurther is Voltage KneeThe
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Knee Voltage: Velocity-Limited Case
µ/ whenoccurs curve in knee theregime, limited- velocity theIn
gsatds LvV =
s.resistance drain & source parasitic theacross drops by voltage
increasedfurther is Voltage Knee theAgain,
VDS=vsatLg/µ
IDRD
VDS=vsatLg/µ
IDRS
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
MOSFET Transconductance
gthgsgoxGS
Dm
gthgsgoxD
LVVWcVIg
LVVWcI
/)(
2/)( limitedmobility
2,
−=∂∂
=→
−=
−
µ
µµ
satgoxGS
Dm
thgssatgoxvD
vWcVIg
VVvWcI
=∂∂
=→
−=−
)( limitedvelocity
,
Id
VgsVth
∆V
gm
VgsVth
∆V
mobility-limited
velocity-limited
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Linear vs. Square-Law Characteristics: 90 nm
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
90 nm MOSFET DC Characteristics
3V~1/ V 6.0||mm/S 7.0μm/mS 7.0/
channel-P
3V~1/ V 6.0mm/S 4.1μm/mS 4.1/
channel-N
λ
λ
=
===
=
===
th
satoxgm
th
satoxgm
VvcWg
VvcWg
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
Device Structure and Model
( ) ( )( )
( )
mi
gds
ggd
ggeq
gs
thgsgeq
geffeq
m
gRNWGNWC
NWLT
C
VVNWT
NWvT
g
/1~
~
or ~
∝
∝
−
ε
µεε
gdb
gsb
gs
gd
endg
g
sg
NWCNWC
NWRNWR
NR
NW
LR
∝
∝
∝
∝
+
/1/1
212~ ρ
CgdRg
Ri
Cgs Vg’s’
gmVg’s’ Gds
Rs
RdG
D
S
Csb
Cdb
CgdRg
Ri
Cgs Vg’s’
gmVg’s’ Gds
Rs
G
D
S
Csb
Cdb
S D S D S D S
G
G
Wg
contacts substrate ample -fingers gateshort -
using Increase maxf
widthgate fingers, gate # == gWN
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
CgdRin
Cgsx Vg’s’
gmxVg’s’ GdsxG
D
S
Cdb
Csb
Oversimplified Model
igsin
sm
dsdsx
sm
gsgsx
sm
mmx
RRRRRg
GG
RgC
C
Rggg
+++
+
+
~
1
~
1~
1~
etc analysis, hand roughFor CgdRg
Ri
Cgs Vg’s’
gmVg’s’ Gds
Rs
G
D
S
Csb
Cdb
gdgdsigs
gddsmgdmgs
CRGRRRff
CRRgCgCf
π
π
τ
τ
2)(2~
)(//~2/1sfrequencie cutoff eApproximat
max +++
+++
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ECE194J /594J notes, M. Rodwell, copyrighted 2011
End