microsoft powerpoint - fms09 - tut 2a - flash memory summit

Toggle-Mode NAND to Fill Growing Need for Higher Performance

Ha Ryong (Harry) Yoon

Sr Manager in Technical MarketingSr. Manager in Technical MarketingSamsung Semiconductor Inc.

Santa Clara, CA USAAugust 2009 1

Process Technology Evolution

Density Keeps IncreasingDensity Keeps Increasing

90nm 70nm 60nm 50nm 40nm 30nm 20nm

Performance & Reliability Concerns !!!Performance & Reliability Concerns !!!

90nm 70nm 60nm 50nm 40nm 30nm 20nm


Growing Need for Higher PerformanceGrowing Need for Higher Performance- Interface Speed Trend

SATA 1

SATA 2

SATA 3

MMC 4.3

MMC 4.4

UFS

SD 3 0 UHS-2

USB 2.0

USB 3.0

SD 2.0

SD 3.0 UHS-1

SD 3.0 UHS-2

BW I/F Speed(Per Pin)


0 1 2 3 4 5 6

Gbps

Growing Need for Higher PerformanceGrowing Need for Higher Performance- NAND Performance Requirement

PCIe3.0 (x16,32ch)

250Mbps

PCIe2 0 (x4 10ch)

500Mbps

200

150 SD3.0(UHS2, x4,2ch))USB3.0 (x1,4ch)

UFS (x1,2ch)

PCIe2 0

PCIe2.0 (x4,10ch)

100

SD3 0(UHS1) MMC4 4

SATA3-6G (x1,10ch)

PCIe2.0 (x1,4ch or x4,16ch)

SAS6G (x1,16ch)

50 40Mbps, Legacy NANDSD3.0(UHS1) MMC4.4


2008 2009 2010 2011 2012* Only I/F BW translated. If considering latency, min requirement would be increased

Market Expansion100% • Enterprise-class SSD (SATA3,

NAND Consumption in EDP

80%

90%

100%

58%64%

78%

Enterprise class SSD (SATA3, SAS, PCIe) and high-speed card(USB3.0, UHS2, UFS) are fueling the need of higher

50%

60%

70%

M/S

49%53%

58% fueling the need of higher performance NAND

• Enterprise SSD will take ~65% of

30%

40%

M

Flash Card (USB + Cards)

Solid-State Drives 44%

41%

Enterprise SSD will take 65% of SSD market at 2012

• USB will take ~14% of NAND

0%

10%

20% 36%

30%17%

USB will take 14% of NAND market at 2012

• SD & uSD will take ~80% of flash


2008 2009 2010 2011 2012 2013Year Source: Gartner (February, 2009)

SD & uSD will take 80% of flash card market at 2012

Toggle-Mode NAND?

High speed “Toggle-Mode” operation• No clock – Asynchronous Double Data Rate• High performance by using the asynchronous

interface for backward compatibilityBidirectional DQS for read and write operations• Bidirectional DQS for read and write operations

Toggle-Mode NANDCE#CLEALE

CE#CLEALE

SLC/MLCNAND

DD

R I

/FLo

gic

RE#WE#WP#

R/B#

LegacyNAND

RE#WE#WP#R/B#DQS

ToggleNAND


D

DQ[0:7]Q

DQ[0:7]

Why Toggle-Mode NAND?

High performance• Supports 133Mbps and higher

Less power consumption• No free-running clock

Flexibility of operating frequency• No additional mode change required

Easy migration from legacy NAND• Same signal functionality as legacy NAND


Differentiation from OthersWRITE READ

No free-running clock• Less power consumption

F f IP i

WE#

DQS

RE#

DQS

WRITE READ

• Free from IP issuesDin Dout

Flexibility of operating frequencyFlexibility of operating frequency• No additional mode-set change required

Simple adoption• Same signal functionality as legacy NAND


Development Status & Roadmap

1st Gen available 2H ’09 at 133Mbps2nd Gen(200Mbps) targeted for early’11, but ( p ) g yentry time depends on market needs and requirements

’09 ’11 or earlier? ~’13(Investigating)

Gen 1133Mbps

Gen 2200Mbps

Gen 3400Mbps


Standardization Status in JEDEC

Item Status CommentsItem Status CommentsPackaging & Pin-out On Going Ball Configuration Done

Addressing & Bad Block DonegDefinitionSignal Definition On Going Under Documentation

AC P t DAC Parameter Done

Initialization & Identification Done

Timing/Command Set On Going Basic Command Set DoneTiming/Command Set On Going Basic Command Set Done

Interface & I/O Characteristics On Going AC/DC & Operating Condition Done

P t P D fi iti O G i B t [100 0] D


Parameter Page Definition On Going Byte[100:0] Done

Thank You !Thank You !For more information,[email protected]@ssi.samsung.com


microsoft powerpoint - fms09 - tut 2a - flash memory summit

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