micro ring modulator - yonsei universitytera.yonsei.ac.kr/class/2012_2_2/test_result.files... ·...
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MICRO‐RING MODULATOR
Dae-hyun Kwon
High-speed circuits and Systems Laboratory
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Paper preview
Title of the paper– Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic
modulator Publication Journal
– Optics express
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Contents
Theory– Plasma dispersion effect
Type of modulators– Mach-Zehnder Interferometer(MZI) modulator– Micro-ring modulator
Structure
Design consideration
Experimental results
Conclusion
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Theory
Plasma dispersion effect– Change the concentration of free charges change the refractive index of the material
– Drude-Lorenz equation relating the concentration of electrons and holes to the absorption (m*ce=0.26m0, m*ch=0.39m0)
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Types of Modulator
Mach-Zehnder interferometer(MZI) modulator– Two waveguide– Phase of signal converted by controlling the bias voltage
Micro-ring modulator– Bus waveguide + ring waveguide– Specific wavelength locked up in ring waveguide by bias voltage
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Characteristic of MZI modulator
Changing phase on one or both arms At the output combiner, interferences occur:
– In phase: constructive interferences– Out of phase: destructive interferences
By converting bias voltage depletion width changed free carrier changed effective index changed(plasma dispersion effect) phase shift is done
Power consumption↑, Footprint↑
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Characteristic of Micro‐ring modulator
Bus waveguide + ring waveguide Part of the incident beam is coupled into the ring and then specific wavelength
light is locked up in ring waveguide Ring waveguide PN junction
Bus waveguide
Ring waveguide
V
Bias voltage
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Micro‐ring modulator
Condition: Light traveling the ring at its at its resonant wavelength must travel an integer number of wavelength m in one round trip Ltot:
Controlling reverse bias voltage Depletion width Tuning effective index modifying the resonant wavelength
Small Vpp for changing the resonant wavelength
Small footprint radius is related to wavelength
Ultra narrow operation BW sensitive to surroundings
mLkL tottot
20
0
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MZI vs. Micro‐ring modulator
MZI modulator (a)Micro-ring
modulator (b)
Peak to peak voltage[v]
High (6.5) Low (2)
Power consumption[fJ/bit]
High (3x104) Low (50)
Footprint[㎛2]
Large (1x104) Small (1x103)
Reliability High Low
(a): “High-speed optical modulation based on carrier depletion in a silicon waveguide”, A.Liu(b): ” Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator”, Po Dong
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Structure reverse biased micro‐ring modulator
Ring resonator coupled to a neighboring bus waveguide• WG: 500 nm (W), 250 nm (H), 50 nm (slab H) tight waveguide bend radii, down
to a few micros
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Design consideration
Asymmetric pn junction optimizing the overlap between the optical mode and the depletion region (p doping: 5x1017 cm-3 , n doping: 1x1018 cm-3)
50 nm offset (pn junction position) hole concentration changes induce a larger index change
than electron concentration changes
Metal to silicon interface: Ohmic contact p++, n++ (1x1020 cm-3)
To overcome sensitivity to surroundings, added the on-chip heater High thermal tuning efficiency achievable
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Experimental results
Extinction ratio = =15 dB
Quality factor ~ 14,500 Resonance shift: 18 pm/V Modulation efficiency (V·Lπ) ~ 1.5 V·cm At 1551.84 nm modulation depth = 6.5 dB, insertion loss = 2 dB
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Experimental results
3dB modulation bandwidth:
RC: RC time constant
τ : cavity photon lifetime
Measured junction cap ~ 50fF, R of contact ~ 55 ohm 2πRC ~ 50GHz
Mainly limited by cavity photon lifetime: τ ~ 75 ps
Predicted BW ~ 13 GHz
22
2
3
)2()2(1
RCf dB
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Experimental results
3 dB BW = 11 GHz PRBS: 223-1, Vpp = 2 V, DC bias = -1 V
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Conclusion
The modulator in this paper is consist of ring resonator as an optical platform and realizes index modulation by using a reversed-biased lateral pn diode embedded in the ring
The sensitivity to surroundings can be solved by adding on-chip heater
The low insertion loss is achieved by no carrier-induced losses in the bus waveguide
A compact(1000㎛2), low loss(2 dB) and high-speed(11GHz) silicon electro-optic modulator with a very low Vpp(2V) and ultralow energy consumption (50fJ/bit) has been demonstrated
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