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Department of Mechanical Engineering MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers JFET

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Page 1: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

MEMS1082

Chapter 3-2 Semiconductor devices Transistors and Amplifiers JFET

Page 2: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Transistors

base

Emitter

Collector

Page 3: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor

General property of a linear amplifier

i

oV V

VA =

i

oi I

IA =

IVii

oo

i

oP AA

IVIV

PPA ===

Input impedance Zi

Output impedance Zo

Page 4: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor Junction field-effect transistor Physical construction Device symbol

Page 5: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor Terminal Properties of a JFET

Transconductance amplifier: The output current is controlled by an input voltage in JFET

Page 6: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor Recall depletion region of a diode

Page 7: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor Pinch off in JFET as VDS increases

Page 8: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor The Terminal characteristics of A n-channel JFET

Page 9: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Junction Field Effect Transistor (FET)

The terminal characteristics of a p-channel JFET

Active region

Page 10: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Transistor and Amplifier A simple JFET amplifier: Circuit diagram

Page 11: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Signal wave form and the load line

Load line

s

DSDSV V

VVA

2min,max, −

=

Page 12: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Amplifier Distortion caused by

large input signals

Page 13: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

dc analysis of a typical JFE amplifier

Operating point

Page 14: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Théveninequivalent circuit

dc analysis of a typical JFE amplifier

Page 15: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

dc analysis of a typical JFE amplifier Rs tends to stabilize

against the variations in JFET parameters

Page 16: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Amplifier DC and small AC analysis

Page 17: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Amplifier DC and small AC analysis

Page 18: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

JFET Amplifier Small AC analysis

Page 19: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 20: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 21: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 22: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 23: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 24: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis of the common-source JFET Amplifier

JFET Amplifier

Page 25: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

For ac analysis, set dc sources to zero and replace the capacitors with a short circuit (approximation)

JFET Amplifier

Page 26: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Further simplified to

JFET Amplifier

Page 27: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Small signal analysis

JFET Amplifier

Page 28: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Example

Page 29: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Simplified small-signal equivalent circuit of a JFET

Page 30: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Effect of the bypass capacitor Cs If no bypass

capacitor Cs, the simplified JFET amplifier circuit will be

Page 31: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Effect of the bypass capacitor Cs Effect of the bypass capacitor Cs

0=∆ GSv

Page 32: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Example: JFET amplifier with Cs removed

( )097.0

1−=

+−=

fss

LDfsV yR

RRyA

Ω== kRZ Gi 100

7.9−==L

iVi R

ZAA

Ω== kRZ Do 1

Page 33: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Frequency response of the JFET Amplifier

Page 34: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Frequency response of the JFET Amplifier

Gate-source and gate-drain pn junctions are reverse biased.The depletion layers are a separation of mobile charge carriers, thus at high f, we have CGD and CGS

CDS is caused by other less predominant factors, such as stray capacitance

For 2N3819 JFETCGD =CGS=4pF, CDS=0

Page 35: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Frequency response of the JFET Amplifier

GSi vv ∆=∆Note:

Convert the controlled current source to controlled voltage source:

Page 36: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Frequency response of the JFET Amplifier

KVL about the right loop

GSi vv ∆=∆Note:

Page 37: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Frequency response of the JFET Amplifier

Equivalent circuit

Page 38: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Example: High frequency JFET amplifier

Page 39: Mechanics of Materials - University of Pittsburghqiw4/Academic/MEMS1082/Chapter3-2 transistors-JFET.pdf · Gate-source and gate -drain pn junctions are reverse biased. The depletion

Department of Mechanical Engineering

Example: High frequency JFET amplifier