Market trends for small-signal discrete devicesStefan Schwantes

November 20, 2017

Semicon

Market trends for small-signal discrete devices

Small-signal discretes are driven by miniaturization & efficiency

nexperia.com2

• A short overview about a new company with a long history: NEXPERIA

• What drives the discrete market?

• Key driver: mobile & wearable

• Key driver: automotive

• Key driver: power efficiency

• The role of discrete packages in support of market trends

Agenda

A new force in Discretes, Logic & MOSFETsWith a long history, broad experience and a global customer base.

nexperia.com3

• A dedicated company for Discretes, Logic and MOSFETs with leadership positions in all product areas

• Over 1.1 billion US$ revenues (2016)

• More than 12% market share

• High volume production of 85 billion units annually

• 11,000 Employees supporting customers globally

• 2 own frontend, 3 own backend manufacturing sites

• Over 60 years of expertise in semiconductors, the former Standard Products division of NXP

• Headquarters in Nijmegen, The Netherlands

• CEO: Frans Scheper, heading a successful and established leadership team

• Award winning corporate identity!

Key Facts

Our manufacturing footprintVertically integrated for maximum efficiency

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Manchester

Nijmegen Hamburg

Guangdong

Cabuyao

Serembam

Front End

Hamburg, Germany

Manchester, UK

Headquarters

Nijmegen

The Netherlands

Back End

Guangdong, China

Cabuyao, Philippines

Seremban Malaysia

5 owned front and back end factories

Very high degree of automation in backend factories

Own specialized equipment designer

Highly efficient supply chain and secure capacity

90 billion products every year

1-stop-shop for Discretes, Logic and MOSFETsBroad portfolio for standard functions and state-of-the art applications

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More than 10,000 active types

MOSFETs

• Automotive MOSFETs• Low RDSon Trench

MOSFETs from 12 V to 200 V

• N/P-channel MOSFETs• ESD protected types

ESD Protection

• ESD protection devices with standard and low capacitance for high-speed interfaces

• Surge protection (TVS) devices

• Common Mode & EMI filters

• Application-specific ESD solutions

Logic devices

• Automotive logic• Buffers, drivers,

transceivers• Counters / frequency

dividers• Flip-flops, latches, registers• Gates• Logic voltage translators• Specialty Logic• Switches, (de)multiplexers

Diodes & transistors

• General purpose diodes and transistors

• Resistor-equipped transistors (RETs)

• Low VCEsat, medium & high power transistors

• Zener, Schottky and switching diodes

• Low VF Schottky and PN rectifier

Innovation Strategy for discrete devices

• The main objectives of new discrete processes, packages, and products are:

• Further reduction of power losses in MOSFETs, Bipolar Transistors and Rectifiers

• Better protection of system ICs with minimized impact on the electronic signals

• Size reduction (especially also height reduction) of packages/products

• In addition we have launched a program to expand the Logic portfolio in the areas of switches and translators

• Reduction of overall power consumption

• Reduction of standby power consumption

• Reduced wiring effort

• Protection of multiple bus systems within the car

• Reduction of size of modules

• Mechanical space constraints

• Cost reduction by smaller control units

• Reduction of overall power consumption

• Reduction of module size

• Reduction of power dissipation / cooling requirements

• Reliability ofinterconnections

• Protection againstinduced spikes

• Increased functional density

• Cost reduction by smaller units

• Faster Charging• Longer battery life• Reduced power

dissipation / heat• Smaller charging

units• Wireless charging

• Protection of interconnects and internal modules

• Smaller form factors (especially thinner)

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NFC antenna, Bluetooth, WiFi• ESD protection, 18V,

24V • MOSFET as Load

Switch

MIPI M-PHY Display, camera• ESD protection• ESD protection & CMF• Analog buffers for

control lines• Logic Gates

Mobile & wearable electronics as a strong driver for Discrete, Logic and MOSFET devices

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Charging & Battery• Schottky Rectifiers as

reverse current protection

• TVS or MOSFET for protection of Vbat

• MOSFETs for charging path

• ESD protection for standard and high speed interfaces

• Surge protection• Battery protection• Load switching• PMEG for DCDC

boost conversion• Logic Gates• Voltage translators• I/O expansion

USB3.x / Type C protection & filtering• ESD protection• ESD protection & CMF• TVS protection for

Vbus and Vbat

SIM & SD Card• ESD protection• ESD protection & EMI

Filtering• Voltage Translation• Analog Switches

Audio interfaces• Headset, Speaker,

Microphone • ESD protection• ESD protection &

EMI filtering

Covering all basic functions in portable applications

HDMI, DisplayPort• ESD protection• ESD protection &

Signal conditioning

Keypad• ESD protection• ESD protection &

EMI filtering

Haptic Driver• Logic Gates

LED Backlight• Schottky Rectifiers in

Boost Converter Circuits

• MOSFET as Load Switch

Application Processor• Logic Gates and

Translators• I/O expansion

through logic mulitplexers andshift registers

Strong growth of wearable devices expectedGartner Says Worldwide Wearable Device Sales to Grow 17 Percent in 2017

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Discrete Protection & Filtering devices–historic market development

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Challenges for discrete ESD protectionKey parameters for ESD protection

High robustness against ESD pulses

Low clamping/dynamic resistance – to protect the system chip

Low capacity to maintain signal integrity for high-speedinterfaces

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Evolution of discrete ESD devices

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General purpose ESDprotection devices

Low capacitance ESD protection for high-speed interfaces

Both, package and silicon technologies have to advance to meet increasing applicationdemands

Year 2000s

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Efficiency in sizeNext generation packages for ultimate space saving solutions for portable devices

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World’s smallest logic package

Large pad pitch, >0.4 mm

Easier PCB placement

High performance

Ultimate space saving solution

Highly reliable & robust

High-power capability due to clip-bond technology and heat sink

Broad range of leadless packages 0402 to 2020 form factor

Including options with solderable side pads

CFP3(SOD123W)2.6 x 1.7 x 1.1

LFPAK33(SOT1210)3.3 x 3.3 x 0.85

CFP5(SOD128)3.8 x 2.6 x 1.0

X2SON5(SOT1226)0.8 x 0.8 x 0.35

X2SON6(SOT1255)1.0 x 0.8 x 0.35

X2SON8(SOT1233)1.35 x 0.8 x 0.35

WLCSP40.8 x 0.8 x 0.35

WLCSP61.48 x 0.98 x 0.35

WLCSP51.51 x 1.14 x 0.65

WLCSP101.57 x 1.17 x 0.57

DSN0402-2(SOD992)0.4 x 0.2 x 0.12

DSN0603-2(SOD962)0.6 x 0.3 x 0.3

DSN1006-2(SOD993)1.0 x 0.6 x 0.3

DFN1006D-2(SOD882D)1.0 x 0.6 x 0.37

DFN1608D-2(SOD1608)1.6 x 0.8 x 0.37

DFN1006B-3(SOT883B)1.0 x 0.6 x 0.37

DFN1010D-3(SOT1215)1.1 x 1.0 x 0.37

DFN2020)(SOT1220 /SOT1118)2.0 x 2.0 x 0.62

DFN1412-6(SOT1268)1.4 x 1.2 x 0.47

Miniaturization

Typical devices for mobile applications

Interface conditioning and protection

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PESD3V3Z1BSF

TrEOS ESD protection in a very small and leadless DSN0603 (SOD962) package.Ideal combination of low capacitance(0.28pF), low clamping and high ESD robustness

PCMFxUSB3SCommon mode EMI filters with integrated TrEOS ESD protection.Superior common-mode suppressionFootprint compatible ESD-only version availableIndustry-standard WLCSP5, 10 and 15 packages for smallest footprint

PTVSxZ1USKTransient voltage suppressor in a very small leadless DSN1608-2 (SOD964) package for mobile applications

PBSS2540MB40V, 0.5A NPN Low VCESAT

Transistor in a leadless ultra small DFN1006-3 package

PHPT60603NY60V, 3A NPN high power bipolar transistor in a SOT669 (LFPAK56) SMD power plastic package

PBSS4130PAN30 V, 1 A double NPN Low VCESAT

Transistor leadlessmedium power DFN2020-6 package

PDTB113EQA50 V, 500 mA PNP resistor-equipped transistors in a leadless ultra small DFN1010D-3 package with solderableside pads

PMZ600UNE / PMDXB600UNEin DFN1006 and DFN1010

• Standard high RDSon20V N-ch for Portables

PMXB43UNE in DFN1010

• 3A drain current on 1 mm² foot print

PMPB27EP in DFN2020

• USB type-C power delivery

Transistors for Typical applications as Load switches, Reverse battery protection & Charging path

PMEG4010EPK40 V, 1 A low VF

Schottky barrier rectifier in a leadless ultra small DFN1608D-2 (SOD1608) packageIdeal for LED backlighting of large displays

PMEG2002AESF20 V, 0.2 A low VF

Schottky barrier rectifier in a leadless ultra small DSN0603 (SOD962) packageIdeal for LED backlighting of small displays

Diodes for LED backlighting

IC insights: discrete market driven by power applicationsApart from mobile applications, applications requiring energy efficiency are driving the market

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source IC insights

Industrial growth driversApart from mobile applications, applications requiring energy efficiency are driving the market

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Sub-circuits enabled by Discretes,

MOSFETs and LOGIC

• Logic: Gates, Transceivers,

Schmitt-Trigger• Zener diodes, Switching diodes• BISS and GP

Transistors• MOSFETs

Bright light with low power

consumption

• BISS & GP transistors

• NCR / NPIC LED Drivers•Analog

Multiplexer/Demultiplexer

• Schottky diodes• Switching diodes

Compact designs through Discretes in advanced packages

• Advanced performance in small packages

• Voltage translators• High ESD protection of

data interfaces• TVS protection on VBUS

lines • MOSFETs for motor

control• Logic level translators

5V down to 1.1V

Robotics

LED Lighting

Industry 4.0 -Digitalization &

ConnectivityCameras & Control &

Sensors

Save Energy / gaining convenience

• Low power translators for I/O expansion• Diodes and transistors in small-size packages• MOSFETs in small-size packages e.g. for load switch applications• White goods – motor control, connectivity

More and faster data busses for

optimized production planning

• ESD protection devices to safeguard transceiver interfaces

of communication buses e.g. I2C,

SPI/SSI, Ethernet, LVDS, RS232, RS485,

USB2.0, USB3.x

IoT, Building & Home Control

Product efficiencyPower efficient, robust, fast, integrated, flexible

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MOSFETs with high ruggedness • Low RDSon

• Low Qg • High SOA• High avalance robustness• Copper clip for low package

inductance and resistance

Schottkys with thermal stability athigh ambient temperatures @ 175°C• Low VF

• Ultra-low leakage

Bipolar transistors for 175°C• Low VCEsat

Logic devices• Low Power consumption (AXP/ AXPnT)• Reduce µC pin count through shift

registers and multiplexers• Multiple usabiliity through combinational

and configurable• Buffers with Schmitt Trigger

Superior thermal performance

Highest design flexibility

High ruggedness in small size

ESD and surge protection• Highest protection of data buses (CAN,

LIN, FlexRay, Ethernet)• High-speed USB protection, e.g. Type-C • High surge robustness up to 600 W

Clip-bonded package families (LFPAK & CFP)Thermally enhanced, reliable and rugged packages

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AOI capable and AEC-Q101 qualified

Boost a track record of 15 years

Solid copper clip – wire bond free

LFPAK family

CFP family

Lower resistance, lower inductance

Best thermal and electrical performance,unprecedented power density

Rugged in toughest conditions

Proven and future proof concept

Flexible leads (LFPAK) for improved reliablity175°C operating temperature

Exposed leads and tin-plated lead ends (CFP15)

Compatible with industry-standard footprints

Nexperia developed LFPAK in 2002Largest portfolio in Automotive MOSFETs and CFP3/5 rectifier

Clip-bonded package families (LFPAK and CFP)Save space without compromising performance

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Schottkyrectifiers

PNrectifiers CFP3

(SOD123W)2.6 x 1.7 x 1.1

CFP5(SOD128)3.8 x 2.6 x 1.0

CFP15(SOT1289)5.8 x 4.3 x 0.78

LFPAK33(SOT1210)3.3 x 3.3 x 0.85

LFPAK56(SOT669)5.0 x 6.0 x 1.0

LFPAK56D(SOT1205)5.0 x 6.0 x 1.0

MOSFETs

Bipolar transistors(LFPAK56/56D)

LFPAK56E(SOT1023)4.58 x 5.13 x 1.03

SMA11.4 mm2

footprint area

CFP36 mm2

footprint area

DPAK70 mm2

footprint area

LFPAK5630 mm2

footprint area

53 %spacesaving

47 %spacesaving

High power capabilities

DPAK/D2PAK &SMA/B/C level

Replace larger package

Continuous innovation in silicon & package technology to support Automotive trends

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Efficiency

Miniaturization

Electrification

Third driver for discrete devices: Electrification of the carSupported by product portfolio and roadmap

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Better safety through MOSFETs

• High drain current capability (ID), • Avalanche ruggedness, • Low RDSon

Higher reliabilitythrough MOSFETs

• Power MOSFETs and Bipolar transistors

• Space saving, power efficient, low

noise

Protection for In-Vehicle Networking

ESD protection devices to safeguard interfaces

of communication buses, IVN,

infotainment systems (incl. solutions for Type-C connector)

Compact designs through Discretes in advanced packages

• Medium-power low VCEsat bipolar transistors

in LFPAK (175 °C) to support voltage

regulation / core supply• ESD Protection

Increased electronic functions

(Braking, steering, fuel injection, automatic

transmission)

Replacement of electric/

mechanical relays

Increased information sensing & processing

(Networks, infotainment)

ADAS(Vision & Safety)

Electrification of the powertrain

(e.g. mild hybrid)

48 V for Mild Hybrid

DCDC converter 48V:12VBoost starter-generator

SuperchargerWater pump

• PowerMOSFET40V, 80V and 100V

• Schottky rectifier up to 100 V

• FRD up to 200V

Discrete devices for...

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Safety and control• ADAS• Airbag• TPMS• Collision warning• Parking assistent• Back monitor

• Switching MOSFETs• ESD / surge protection• Battery protection• Free-wheeling diode• Flyback diode• DCDC conversion• Voltage regulation• Shift register• I/O expansion• LED drive

Powertrain48V Mild Hybrid• DCDC converter 48V:12V• Boost starter-generator• Supercharger• Water pump

Powertrain 12V ICE• Engine control• Fuel pump• Transmission• Alternator, battery, and

starter

Lighting• Front LED lighting• LED Daytime running

light• Rear LED lighting• Interior LED lighting

Comfort and control• Power door• Power window• Climate control• Seat control• Mirrow and wiper control

Chassis• Steering / EPS• Braking / ABS• Electronic Parking Brake• Traction control• Suspension• Roll stabiliation

Networking & Diagnostic• CAN• LIN• FlexRay• Ethernet• BroadR-Reach• Bluetooth, WiFi• USB

Infotainment• Dashboard• Car audio• Connectivity audio• Entertainment• GPS• Car navigation display

Covering all basic functions enabling automotive electronic applications

Typical devices for automotive applications

Bipolar transistors Diodes & Rectifiers

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NCR402T20 mA LED driver in a SOT23 plastic package

PHPT60603NYNPN high power bipolar transistor in a SOT669 (LFPAK56) SMD power plastic package

BCP56T80 V, 1 A NPN medium power transistors in SOT223 package

PDTB113EQA50 V, 500 mA PNP resistor-equipped transistors in a leadless ultra small DFN1010D-3 package with solderableside pads

PMEG100V100ELPD100 V, 10 A low leakage current Schottky barrier rectifierencapsulated in a CFP15 (SOT1289) package

PNS40010ER400 V, 1 A high power density, standard switching time PN-rectifierin a small and flat lead CFP3 (SOD123W) package

PMEG4010EPK40 V, 1 A low VF

MEGA Schottky barrier rectifier encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package

PMEG10030ELP100 V, 3 A low VF

MEGA Schottky barrier rectifierin a small and flat

lead CFP5

(SOD128) package

LFPAK33 Shrinking the power footprint

• LFPAK family extension into medium/low power systems

• Advanced copper clip package technology

• Easy optical inspection

• Enhanced board-level reliability

• Compact footprint 10.9mm2

• Ultra-low package resistance

DFN2020MD-6 Ultra-small single MOSFETs

• N- and P-channel MOSFETs

• 175°C degree

• 13 types with VDS: 20-60 V

• Solderable side-pads for easy optical inspection

• Compact footprint: 2x2 mm, height: 0.65 mm

MOSFETs for EPS, transmission control, HVAC, Chassis & safety

Product / package range

DFN1006-3 DFN1010D-3 SOT666 D2PAK TO-220

1.0 x 0.6 x 0.5 1.1 x 1.0 x 0.37 1.6 x 1.2 x 0.55 11 x 10 x 4.3 15.6 x 10 x 4.4

20V - 60V 12V - 80V 20V - 60V 30V - 100V 30V - 100V

SOT363 SOT323 DFN2020MD-6 SOT457 SOT23

2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 2.0 x 2.0 x 0.65 2.9 x 1.5 x 1.0 2.9 x 1.5 x 1.0

20V - 60V 20V - 60V 12V - 80V 20V - 60V 20V - 100V

LFPAK33 LFPAK56 LFPAK56D SOT223

3.3 x 3.3 x 0.85 5.0 x 6.0 x 1.0 5.0 x 6.0 x 1.0 6.5 x 3.5 x 1.65

30V - 100V 30V - 100V 30V - 100V 70V - 100V

Package growth areasContinuously investing in new technologies

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GROWTH STABLE DECLINE

Leadless and

Clip-bond packages

Leaded SMD

packages

Glass /

through-hole

packages

SA

LE

S V

OL

UM

E

Conventional power

packages

SMA (B/C), TO-22

Continuous innovation

Space, power & thermal efficiency

Different applications result in a broad range of packages…

Market trends for small-signal discrete devices

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• Growing market segments for discrete devices are :- Mobile & wearable- Automotive- Energy efficient industrial applications

• High-speed interfaces and increasing ESD sensitivity are a strong growth driver

• Clip-bonded packages are replacing wire-bonded for power efficient applications

• Different applications result in a broad range of packages

• The main objectives of new processes, packages, and products are

• Further reduction of power losses in MOSFETs, Bipolar Transistors and Rectifiers

• Better protection of system ICs with minimized impact on the electronic signals

• Size reduction (especially also height reduction) of packages/products

Summary