m. sorokine, h. hemmen, w.w. stoffels, g.m.w. kroesen

1
Suiting a voltage and current sensor Suiting a voltage and current sensor for a nanoparticle detection in an for a nanoparticle detection in an Ar-Silane capacitively coupled Ar-Silane capacitively coupled plasma. plasma. M. Sorokine, H. Hemmen, W.W. Stoffels, G.M.W. Kroesen Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands EPG EPG Elementary Processesin G asdischarges Elementary Processesin G asdischarges EPG EPG Elementary Processesin G asdischarges Elementary Processesin G asdischarges TU e / TU e / IV sensor IV sensor t V V v t I V i ) ( 0 0 ) ( jwt e I I V V v I V i t V V v t I V i ) ( 0 0 ) ( jwt e I I V V v I V i FFT. 0.2% fund. 60% harm. 0.00E+00 1.00E-03 2.00E-03 4.00E-03 5.00E-03 6.00E-03 1 53 m easurem ent current [V] 0.00E+00 1.00E-04 2.00E-04 4.00E-04 5.00E-04 6.00E-04 1 53 m easurem ent voltage [V] 220 28 0.00E+00 1.00E-03 2.00E-03 4.00E-03 5.00E-03 6.00E-03 1 53 m easurem ent current [V] 0.00E+00 1.00E-04 2.00E-04 4.00E-04 5.00E-04 6.00E-04 1 53 m easurem ent voltage [V] firstharm onic second harm onic third harmonic fourth harm onic 220 28 0 .0 0% 5 .0 0% 10.00% 15.00% 20.00% 25.00% 30.00% 0.0E+00 2.0E+03 4.0E +03 6.0E +03 8.0E +03 1.0E +04 1.2E+04 1.4E+04 1.6E +04 1.8E+04 1/ am plitude [1/V] rel. error 690 790 900 22 V V mV 490 256 * 2 250 0 .0 0% 5 .0 0% 10.00% 15.00% 20.00% 25.00% 30.00% 0.0E+00 2.0E+03 4.0E +03 6.0E +03 8.0E +03 1.0E +04 1.2E+04 1.4E+04 1.6E +04 1.8E+04 1/ am plitude [1/V] rel. error 690 m T orr 790 m T orr 900 m T orr 22 V V mV 490 256 * 2 250 Relative errors 0 1 2 3 4 5 0 28 56 84 112 140 fourier coefficientn abs (Y[n] + i* 690 m Torroscilloscope -0.25 -0.2 -0.15 -0.1 -0.05 0 0.05 0.1 0.15 0.2 0.25 0 50 100 150 200 250 tim e [2ns] current[V ] -0.2 -0.15 -0.1 -0.05 0 0.05 0.1 0.15 0.2 voltage [V ] current voltage Phase shift. FFT 27 0 . PIM 85 0 FFT spectrum Plasma discharges are widely used in many specialized commercial production environments. One of these is the production of solar cells. The key process in that production is the plasma enhanced silicon layers deposition. Solar cells are known to have a high cost and a poor efficiency. By incorporating nano-scale particles into the layers, a considerable improvement in product quality is achieved. This project is devoted to a study of the process of nano- particle formation. In this work we present difficulties one encounters analyzing the RF power characteristics using a voltage and current probe. We report on the problems associated with the data acquisition itself, as well as on the complications in the data processing and analysis. Measurements in the air discharge plasma are presented to illustrate the given examples. While using a commercially made Voltage/Current probe one may encounter a problem of not being able to use the factory calibration data. Reasons for that may be a possible change of the impedance of the measuring circuit while using a different measuring device, in our case it was a digital oscilloscope, a different method or technique used in the factory calibration, or simply because such information is not available. Calibration experiments have been performed in air discharge. Experiments in other gases may eliminate the problems of low amplitude harmonics. A higher bit Analog-Digital Converter will increase the detection limits and signal to noise ratio. m easurem ent[2ns] current [V first harm onic fourth harm onic third harm onic second harm onic fundam ental frequency higherharmonics Fourier transform ation Signal from the sensor I U RF generator Plasm a I U Sensor RF generator Plasm a Power monitoring V mV 1st 2nd 2nd 1st fund fund V mV 1st 2nd 2nd 1st fund fund We used the original Smart PIM hardware of Scientific Systems to calibrate the readings from the sensor. On the factory a similar procedure has already been done for the original PIM hardware. So we expected that the two results would match each other. Calibration principle A fund Measured harmonics A 1 A 2 PIM readings 0.8 PIM m easurem ent 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 462 Vol tag e [V ] first harm onic second harm onic third harm onic fourth harm onic 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 1 462 PIM m easurem ent cur re nt [A] 144 113 0.8 PIM m easurem ent 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 462 Vol tag e [V ] first harm onic second harm onic third harm onic fourth harm onic 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 1 462 PIM m easurem ent cur re nt [A] 144 113 8 bit=256 PIM. 1.9% and 1.6% max. 1.96 m V Representation of discrete higher harmonic measurement Table 1.C alibration coefficientsp=900m Torr current[A /VI] factory calibration voltage [V /VV] factory calibration fundam ental 10.66±0.02 5.9849E+04 (8.91±0.01)E+02 8.6707E+02 firstharm onic 2.55±0.04 1.1970E+05 (1.43±0.07)E+03 1.7341E+03 second harm onic 20.6±0.9 1.7955E+05 (7.7±0.4)E+02 2.6012E+03 third harm onic 27±8 2.3940E+05 (1.3±0.2)E+03 3.4683E+03 fourth harm onic 55±4 2.9925E+05 (2.5±0.2)E+03 4.3353E+03 Table 2. Phase m easurem ents(degrees)p=900m Torr oscilloscope PIM m easured offset factory calibration fundam ental -22±3 -85.2±0.5 63 27.098 firstharm onic -87±6 71.2±0.8 158 54.196 second harm onic -131±9 -131±1 0 81.294 third harm onic -38±20 -41±2 3 108.392 fourth harm onic -39±20 -77.0±0.4 38 135.49 0.00E+00 1.00E-05 2.00E-05 3.00E-05 4.00E-05 5.00E-05 0.00E+00 2.00E -04 4.00E-04 6.00E -04 8.00E-04 1.00E -03 average am plitude [V ] standard deviation 690 mTorr 790 mTorr 900 mTorr Standard deviation Reasonable agreement for voltage and non for current Our measurements do not confirm factory offset values Analysis of the standard deviation in our measurements allows us to say that the big deviation in the results for the low amplitude higher harmonics of voltage is a result of a not sufficiently high 8 bit resolution capability of the scope. You can see on the graph that the standard deviation for most experiments remains constant. 4096 points 8 mks 29 th EPS Conference, June 17-21, 2002, Montreux, Switzerland

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We used the original Smart PIM hardware of Scientific Systems to calibrate the readings from the sensor. On the factory a similar procedure has already been done for the original PIM hardware. So we expected that the two results would match each other. FFT. 0.2% fund. 60% harm. - PowerPoint PPT Presentation

TRANSCRIPT

Page 1: M. Sorokine, H. Hemmen, W.W. Stoffels, G.M.W. Kroesen

Suiting a voltage and current sensor for Suiting a voltage and current sensor for a nanoparticle detection in an Ar-Silane a nanoparticle detection in an Ar-Silane

capacitively coupled plasma.capacitively coupled plasma.M. Sorokine, H. Hemmen, W.W. Stoffels, G.M.W. Kroesen

Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

EPGEPGElementary Processes in GasdischargesElementary Processes in Gasdischarges

EPGEPGElementary Processes in GasdischargesElementary Processes in Gasdischarges

TU e/TU e/

IV sensorIV sensor

t

VV v

t

IV i

)(0

0)( jwteII

VV v IV i

t

VV v

t

IV i

)(0

0)( jwteII

VV v IV i

FFT. 0.2% fund. 60% harm.

0.00E+00

1.00E-03

2.00E-03

4.00E-03

5.00E-03

6.00E-03

1 53 measurement

current [V]

0.00E+00

1.00E-04

2.00E-04

4.00E-04

5.00E-04

6.00E-04

1 53 measurement

voltage [V]

first harmonic second harmonic third harmonic fourth harmonic

220 28

0.00E+00

1.00E-03

2.00E-03

4.00E-03

5.00E-03

6.00E-03

1 53 measurement

current [V]

0.00E+00

1.00E-04

2.00E-04

4.00E-04

5.00E-04

6.00E-04

1 53 measurement

voltage [V]

first harmonic second harmonic third harmonic fourth harmonic

220 28

0 . 0 0 %

5 . 0 0 %

1 0 . 0 0 %

1 5 . 0 0 %

2 0 . 0 0 %

2 5 . 0 0 %

3 0 . 0 0 %

0 . 0 E + 0 0 2 . 0 E + 0 3 4 . 0 E + 0 3 6 . 0 E + 0 3 8 . 0 E + 0 3 1 . 0 E + 0 4 1 . 2 E + 0 4 1 . 4 E + 0 4 1 . 6 E + 0 4 1 . 8 E + 0 4

1 / a m p l i t u d e [ 1 / V ]

rel. e

rror

6 9 0 m T o r r

7 9 0 m T o r r

9 0 0 m T o r r

2 2 V

VmV 490

256*2

250

0 . 0 0 %

5 . 0 0 %

1 0 . 0 0 %

1 5 . 0 0 %

2 0 . 0 0 %

2 5 . 0 0 %

3 0 . 0 0 %

0 . 0 E + 0 0 2 . 0 E + 0 3 4 . 0 E + 0 3 6 . 0 E + 0 3 8 . 0 E + 0 3 1 . 0 E + 0 4 1 . 2 E + 0 4 1 . 4 E + 0 4 1 . 6 E + 0 4 1 . 8 E + 0 4

1 / a m p l i t u d e [ 1 / V ]

rel. e

rror

6 9 0 m T o r r

7 9 0 m T o r r

9 0 0 m T o r r

2 2 V

VmV 490

256*2

250

Relative errors

0

1

2

3

4

5

0 28 56 84 112 140

fourier coefficient n

abs

(Y[n

] +

i*X

[n])

690 mTorr oscilloscope

-0.25-0.2

-0.15-0.1

-0.050

0.050.1

0.150.2

0.25

0 50 100 150 200 250

time [2ns]

curr

en

t [V

]

-0.2

-0.15

-0.1

-0.05

0

0.05

0.1

0.15

0.2

volta

ge

[V]

current

voltage

Phase shift. FFT 270. PIM 850

FFT spectrum

Plasma discharges are widely used in many specialized commercial production environments. One of these is the

production of solar cells. The key process in that production is the plasma enhanced silicon layers deposition. Solar cells are known to have a high cost and a poor efficiency. By incorporating nano-

scale particles into the layers, a considerable improvement in product quality is achieved. This project is devoted to a study of the process of nano-particle formation. In this work we present

difficulties one encounters analyzing the RF power characteristics using a voltage and current probe. We report on the problems

associated with the data acquisition itself, as well as on the complications in the data processing and analysis. Measurements in the air discharge plasma are presented to illustrate the given

examples.

While using a commercially made Voltage/Current probe one may encounter a problem of not being able to use the factory calibration data. Reasons for that may be a possible change of the impedance of the measuring circuit while using a different measuring device, in our case it was a digital oscilloscope, a different method or technique used in the factory calibration, or simply because such information is not available. Calibration experiments have been performed in air discharge. Experiments in other gases may eliminate the problems of low amplitude harmonics. A higher bit Analog-Digital Converter will increase the detection limits and signal to noise ratio.

-0.250

measurement [2ns]

cu

rre

nt

[V]

firstharmonic

fourthharmonic

thirdharmonic

second harmonic

fundamentalfrequency

higher harmonics

Fourier transformation

Signal from the sensor

IU

Sensor RF generatorPlasma

IU

Sensor RF generatorPlasma

Power monitoring

V mV

1st

2nd 2nd

1st

fund

fund

V mV

1st

2nd 2nd

1st

fund

fund

We used the original Smart PIM hardware of Scientific Systems to calibrate the readings from the sensor. On the factory a similar procedure has already been done

for the original PIM hardware. So we expected that the two results would match each other.

Calibration principle

Afund

Measured harmonics

A1

A2

PIM readings

0.8

PIM measurement

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

1 462

Voltage [V]

first harmonic second harmonic third harmonic fourth harmonic

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

1 462 PIM measurement

current [A]

144 113 0.8

PIM measurement

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

1 462

Voltage [V]

first harmonic second harmonic third harmonic fourth harmonic

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

1 462 PIM measurement

current [A]

144 1138 bit=256

PIM. 1.9% and 1.6% max.

1.96 mV

Representation of discrete higher harmonic measurement

Table 1. Calibration coefficients p=900mTorr current [A/VI] factory

calibration voltage [V/VV] factory

calibration fundamental 10.66±0.02 5.9849E+04 (8.91±0.01)E+02 8.6707E+02 first harmonic 2.55±0.04 1.1970E+05 (1.43±0.07)E+03 1.7341E+03 second harmonic 20.6±0.9 1.7955E+05 (7.7±0.4)E+02 2.6012E+03 third harmonic 27±8 2.3940E+05 (1.3±0.2)E+03 3.4683E+03 fourth harmonic 55±4 2.9925E+05 (2.5±0.2)E+03 4.3353E+03

Table 2. Phase measurements (degrees) p=900mTorr oscilloscope PIM measured offset factory calibration fundamental -22±3 -85.2±0.5 63 27.098 first harmonic -87±6 71.2±0.8 158 54.196 second harmonic -131±9 -131±1 0 81.294 third harmonic -38±20 -41±2 3 108.392 fourth harmonic -39±20 -77.0±0.4 38 135.49

0.00E+00

1.00E-05

2.00E-05

3.00E-05

4.00E-05

5.00E-05

0.00E+00 2.00E-04 4.00E-04 6.00E-04 8.00E-04 1.00E-03

average amplitude [V]

sta

nd

ard

dev

iatio

n [V

]

690 mTorr

790 mTorr

900 mTorr

Standard deviation

Reasonable agreement for voltage and non for current

Our measurements do not confirm factory offset values

Analysis of the standard deviation in our measurements allows us to say that the big deviation in the results for the low amplitude higher harmonics of voltage is a result of a not sufficiently high 8 bit resolution capability of the scope. You can see on the graph that the standard deviation for most experiments remains constant.

4096 points

8 mks

29th EPS Conference, June 17-21, 2002, Montreux, Switzerland