lupa-4000 info

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    2004.1.8, Ashra Collab. Mtg@Hawaii 1

    Ashra CMOS Fi ne I mage Sensor

    Jan. 8, 2004, @U. of Hawaii

    Yasuo Arai (KEK)

    [email protected]

    I ntroducti on

    Sensor Archi tecture

    Pi xel Structure

    Si gnal Si mul ati on

    Schedul e

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    2004.1.8, Ashra Collab. Mtg@Hawaii 2

    I ntroducti on (1)

    CMOS sensor technology is rapidly progressing. It has many

    advantages compared with CCD technology; It is possible to integrate with logics (High Performance).

    Commercial process is usable (Low Cost).

    It works in low voltage (Low Power). Higher S/N becomes achievable with circuit technologies

    (close to CCD).

    High-speed readout is possible with pipeline and/or paralleltechniques.

    However existing CMOS sensor has;

    A global shutter -> to cover large FOV, shutters for small regionsare necessary to avoid unwanted light background.

    < 10 frames/sec -> higher readout rate (~1,000 event/sec) isrequired to reduce trigger threshold. We should read out onlyinteresting parts of sensor.

    Develop New CMOS sensor !

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    2004.1.8, Ashra Collab. Mtg@Hawaii 3

    I ntroducti on (2)

    6060cmcm44cmcm

    Fi ne I mage Sensori ne I mage Sensor 2, 048 x 2, 048 pi xel s) 2, 048 x 2, 048 pi xel s)X-Y address

    Lens I . I .ens I . I .

    Tri gger Sensorri gger Sensor128 x 128 pads)128 x 128 pads)

    To achi eve 1 arcmi n resol uti on, 3, 000x3, 000 pi xel s are requi red,

    but we sel ect 2, 048x2, 048 pi xel s (1. 5 arcmi n) f i ne i mage sensor(AFS-1) as a real i sti c sol uti on at present stage.

    2-D sel ectabl e (128 x 128 regi ons) exposure to reduce background

    noi se. 2-D sel ectabl e (128 x 128 regi ons) readout to reduce deadti me.

    Overl appi ng exposure for tri ggered regi on shoul d be possi bl e.

    Use advanced CMOS process (0. 25 m) to get l arge aperture.

    Amp I . I .mp I . I . Del ay I . I .

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    4/192004.1.8, Ashra Collab. Mtg@Hawaii 4

    AFS-1 Structure

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    Overlapping Imaging

    Imaging region should be larger than the triggered region tocompensate misalignment.

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    Region Control Logics

    A trigger region is composed of 16x16 pixels.

    Imaging region has 20x20 pixels, thus 4 pixels overlap withadjacent region.

    Readout is done for each sub regions.

    Same logics in X-direction

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    An example of 2-D CMOS Active Pixel

    reset

    store

    amplify

    select

    Pi xel use onl y NMOS Tr.Vcontrol >Vdd +0. 8V.

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    A Toy simulation of Light Exposure with a Delay I.I.

    TriggerDecisionReadout

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    2004.1.8, Ashra Collab. Mtg@Hawaii 10

    Naive Extension of 4T cell to 2-D-

    No. of Trasnsistors : 4 -> 6Tr

    No. of Control Line : 3 -> 5lines.

    Cvd is too large !

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    2004.1.8, Ashra Collab. Mtg@Hawaii 11

    Naive Extension of 6T cell to 2-D-

    No. of Trasnsistors : 6-> 9Tr

    No. of Control Line : 5-> 8lines.

    Too Complex ?

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    2004.1.8, Ashra Collab. Mtg@Hawaii 12

    New Structure (APix-9) being investigated

    No. of Trasnsistors : 6

    -> 9

    TrNo. of Control Lines : 8 -> 6 lines.

    APi 9 Si l ti

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    2004.1.8, Ashra Collab. Mtg@Hawaii 13

    APix-9 Simulation

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    2004.1.8, Ashra Collab. Mtg@Hawaii 14

    Limitation in Control

    Only continuous exposure is allowed.

    Pipeline operation is possible, but shutter must be open untilprevious readout is finished.

    Mirror images are generated if multiple X and Y addresses are

    supplied.

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    2004.1.8, Ashra Collab. Mtg@Hawaii 15

    AFS-1 Specifications(Preliminary)

    aram eter S pecificationShutter types 2-D (128 x 128 regions, 20 pix by 20 pix,

    4 pix overlap)

    Readout Unit 2-D (256 x 256 regions)

    Pixel size ~12um x ~12um

    Resolution 2,048 x 2,048 pixels

    Pixel rate 33 M pix/s x 2

    C onversion gain ~10uV/electron@ Pixel

    Peak Q E*FF ~ 30% (average ~ 25%)

    O ptical cross talk < 10%

    D ark Current < 10,000 e-/sec

    Noise electron < 100 e-

    Saturation charge > 100,000 e-

    Spectral sensitivity range 400 - 1000 nm

    ADC 33M Hz 10 bit x 2

    Pow er dissipation < 400 m W

    S h d l

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    2004.1.8, Ashra Collab. Mtg@Hawaii 16

    Schedule

    Sensor: FillFactory

    ~Feb. 2004: Agreement on Statement Of Work. ~Mar. 2004: Quotation and Contract.

    Fall 2004: Design finish.

    Early 2005: Sensor fabrication finish. Spring 2005: Evaluation finish.

    Peripheral I/O: Toshiba DMS

    ~Mar. 2004: Learn FillFactory sensor

    control with an evaluation kit. ~Apr. 2004: Design and production of

    prototype readout modules for LUPA-4000sensor.

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    2004.1.8, Ashra Collab. Mtg@Hawaii 17

    LUP

    PC

    M other BoardSystemP.S.

    BUFLV DS S/PTr/Rc

    Memory

    RO M

    C om m unicationLSI

    Cable

    SensorP.S.

    ToLUPA4000Sensor Module

    2x2(2ch)

    3 8x8

    uC

    Copyright 2002-2003 Toshiba Design & Manufacturing Service Corporation All rights reserved.

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    2004.1.8, Ashra Collab. Mtg@Hawaii 18

    LUPA4000Sensor ModuleLUPA4000

    LVDS Seriarizer

    10

    102

    2

    SPI3

    Sensor Control

    14

    Sensor Module

    LVDS Seriarizer

    22

    3

    2

    1LVDS

    LVDS1

    Sensor

    Control

    P.S.

    (ch1)

    (ch2)

    Sensor Control Board

    Copyright 2002-2003 Toshiba Design & Manufacturing Service Corporation All rights reserved.

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    2004.1.8, Ashra Collab. Mtg@Hawaii 19

    Summary

    Architecture of Ashra Fine Sensor is being studied

    (2,048x2,048 pixels, 2-D control of exposure and readout).

    Discussion with FillFactory for the sensor development has been

    started.

    Several pixel structures are studied and simulated. Present

    candidate is 9 Tr pixel (APix-9).

    A prototype readout module is being developed by Toshiba DMS.