9th Sept, 20091

VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Low Power Implementation of ARM1176JZF-S

by

Manish Kulkarni

2 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Statement Input

RTL of ARM1176JZF-S Implementation process in 65nm CMOS (TSMC) Power Intent Library Information (to be used)

Output Enabling RTL for Low Power design

This includes enabling clock gating Writing Unified Power Format (UPF) from given power intent Low Power implementation of ARM1176JZF-S for 45nm CMOS

(Samsung)

3 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Outline Basic implementation Flow Synthesis

Basic Input Requirements Decision on Power Intent and Creation of UPF

Understanding Intent and creating Power Intent Diagram Describing this power intent in UPF

Floor Planning Placement Optimization Clock Tree Synthesis (CTS) Route Optimization LVS and DRC Static Timing Analysis (Primetime) Power Analysis (Primetime PX) Formal Verification Remaining work

4 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Basic Flow

5 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Basic Requirements

Tech .tcl script

6 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Decision on Power Intent and UPF creation

7 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Intent

Power Mode

VDDCORE VDDRAM VDDSOC

High Voltage 1.21 v 1.21 v 1.21 v

Med Voltage 1.14 v 1.14 v 1.21 v

Low Voltage 0.99 v 0.99 v 1.21 v

Dormant OFF (0 v) 1.21 v 1.21 v

8 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

9 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Intent Diagram

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE VDDSOCVDDRAM

VSS

10 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Intent Diagram

VSS

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE VDDSOCVDDRAM

VSS

11 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Intent Diagram

VSS

VSS

VDDSOC

VDDRAM

VSS

VDDSOC

VDDCORE

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE

VDDSOCVDDRAM

VSS

LS

LS

VDDRAM

VSS

VSS

VDDCORE

12 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Intent Diagram

VDDCORE1.21 V

1.14 V

0.99 V

OFF

VDDRAM1.21 V

1.14 V

0.99 V

1.21 V

VDDSOC1.21 V

1.21 V

1.21 V

1.21 V

VSS

VSS

VDDSOC

VDDRAM

VSS

VDDSOC

VDDCORE

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE

VDDSOCVDDRAM

VSS

VDDRAM

VSS

VSS

VDDCORE

LS

LS

13 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

UPFPower Intent

Diagram

Writing UPF from Power Intent Diagram

14 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Interpreting Diagram

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE VDDSOCVDDRAM

VSS

create_supply_net

create_power_domain

create_supply_port

15 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

VSS

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE VDDSOCVDDRAM

VSS

set_isolation

set_isolation_control

Interpreting Diagram

16 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

VSS

VSS

VDDSOC

VDDRAM

VSS

VDDSOC

VDDCORE

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE

VDDSOCVDDRAM

VSS

LS

LS

VDDRAM

VSS

VSS

VDDCORE

set_level_shifter - rule low_to_high

set_level_shifter - rule high_to_low

Interpreting Diagram

17 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

VDDCORE1.21 V

1.14 V

0.99 V

OFF

VDDRAM1.21 V

1.14 V

0.99 V

1.21 V

VDDSOC1.21 V

1.21 V

1.21 V

1.21 V

VSS

VSS

VDDSOC

VDDRAM

VSS

VDDSOC

VDDCORE

VDDSOC

CPUCLAMP

VSS

VDDRAM

RAMCLAMP

VCORE

VRAM

DEFAULT_VA

VDDCORE VDDSOCVDDRAM

VDDCORE

VDDSOCVDDRAM

VSS

VDDRAM

VSS

VSS

VDDCORE

LS

LS

create_pst PST -supplies {VDDCORE VDDRAM VDDSOC}add_pst_state PM_highV -pst PST -state {High High High }add_pst_state PM_medV -pst PST -state {Med Med High }add_pst_state PM_lowV -pst PST -state {Low Low High }add_pst_state VCORE_dormant -pst PST -state {OFF High High }`

Interpreting Diagram

18 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Floorplanning

19 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Floorplanning (Cont..)

20 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Placement Optimization The cells in the design are placed in the layout to meet the

given timing, area and power constraints It is an iterative process

Violations: High Fan-out Nets Violations

Constraints reports after synthesis reported 2 high-fan-out nets CPUCLAMP ( fanout : 1684) RAMCLAMP ( fanout : 48)

These caused many max_trasition violations These nets were fixed by

compile_clock_tree –high_fanout_net CPUCLAMP compile_clock_tree –high_fanout_net RAMCLAMP

21 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

CTS and ROUTE Clock Tree Synthesis (CTS) :

routes the clock throughout the design Inserts buffers in the tree so as to meet max. fan-out and max.

transition constraints The cells placed during place optimizations are not modified

Routing All the interconnection signals are routed Buffers may be inserted in order to meet timing constraints Constraints on the metal layers to be used are specified Iterative process which takes the longest time in the flow

22 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

LVS and DRC Layout Versus Schematic (LVS)

It is verified weather the layout obtained is same as the schematic specified

The connectivity of the ports and signals is verified as per the schematic

Design Rule check (DRC) Foundry specifies manufacturing specific design rules Spacing between 2 metal tracks in same layer etc Designer has to verify if these rules are being followed properly

Tools like Hercules (Synopsys) and Calibre (Mentor Graphics) can be used

IC Compiler also contains inbuilt tools to check LVS and DRC

23 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Static Timing Analysis Analysis Performed using Primetime Post Layout verilog netlist is loaded Extracted Parasitic are loaded Timing analysis is performed for only one power state (High

voltage)

Violations: Setup and Hold violations were found Transition violations were found These violations were fixed by adding buffers in high fan-out

nets which are causing these violations It can also be fixed by increasing the drive strength of cells

24 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Power Analysis Power Analysis is performed using Primetime PX Probabilistic logic activity was used for power measurement and the

probability was set to 0.25 Analysis was done only for first power state i.e. the high voltage mode

Power Group Internal(W)

Switching(W)

Leakage(W)

Total (Row)(W)

%

IO pad 0 0 0 0 0.00 %

memory 2.033e-03 5.632e-04 1.933e-04 2.789e-03 44.30%

clock_network 2.318e-04 1.105e-05 2.745e-04 5.174e-04 8.22%

register 6.903e-05 5.583e-06 3.601e-04 4.347e-04 6.90%

combinational 2.148e-04 1.777e-03 5.001e-04 2.492e-03 39.58%

sequential 4.312e-05 2.980e-06 1.690e-05 6.299e-05 1.00%

Total (Column) 2.591e-03 2.360e-03 1.345e-03 6.296e-03

41.16% 37.48% 21.36% 100.00%

25 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Formal Verification Tool used is Formality (Synopsys) proves or disproves functional equivalence of two designs In this case, functionality is verified between the pre-layout

gate level netlist (or verified(golden) RTL) and post-layout gate level netlist

Uses static techniques which do not require vector inputs Uses existing Synopsys Design Compiler technology libraries

26 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

Remaining Work

Power State Voltages Power FrequencyVCORE VRAM VSOC

State_High 1.21 v 1.21 v 1.21 v 6.296 mW 250 MHz

State_Med 1.14 v 1.14 v 1.21 v ? ?

State_Low 0.99 v 0.99 v 1.21 v ? ?

Dormant 0 v 1.21 v 1.21 v ? ?

• The characterization was done for only High Power state • Similar characterization can be done for the other Power states

27 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL

28 9th Sept, 2009VLSI Design & Test seminar series, Fall 2009, Auburn University, Auburn, AL