SPEC NO: REV NO:A/2 DATE:July/29/2010 PAGE:1/4

Package Dimensions

Dimension Tolerance (UNIT:mm) 0.5~3 3~6 6~30 30~120

Tolerance Grade

0.1 0.2 0.3 0.5 Chip Lens Color

Material Emitting Color GaAs /

Water Clear

Features Mechanically and spectrally matched to the phototransistor. Rohs compliant.

Description This devices are made with PIN GaAs.

2

1

1ANODE2CATHODE

2.54

28.0

1.0

8.7

4.9

0.5

2.01.0mm5

5.8

21

21

1.5MAX

SPEC NO: REV NO:A/2 DATE:July/29/2010 PAGE:2/4

Selection Guide

Radiant Intensity(mW/sr)

IF=50mA Viewing Angle

Part No

Min Typ 21/2

()

D+L ED E -LD5 IR940 -- 60 20

Note: 1. 21/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.

2.Tolerance of measurement of luminous intensity15%. Electrical / Optical Characteristics at TA=25C

Item Symbol Min Typ Units Test Conditions

Forward Voltage VF 1.2 1.5 V

Reverse Current IR -- 10 uA

Peak Spectral Wavelength D -- 940 nm

Spectral Bandwidth 1/2 -- 50 nm

IF=50mA

Note:

1.Tolerance of measurement of forward voltage0.1V.

2.Tolerance of measurement of peak Wavelength2.0nm. Absolute Maximum ratings at Ta=25

Parameter Symbol IR1 Units Power Dissipation Pt 100 mW DC Forward Current IF 50 mA Peak Forward Current[1] iFS 300 mA Operating Temperature -30~80 Storage Temperature -30~80

Note:

1.IFP ConditionsPulse Width10msec 2.Tsol Conditions3mm from the base of the epoxy bulb

SPEC NO: REV NO:A/2 DATE:July/29/2010 PAGE:3/4

Remarks: If special sorting is required (e.g.binning based on forward voltage or radiant intensity/luminous flux),the typical accuracy of the sorting process is as follows: 1. Radiant intensity/Luminous Flux:15%. 2. Forward Voltage:0.1V. Note:Accuracy may depend on the sorting parameters.

806040200

Ambient Temperature Ta()

3.0

2.5

2.0

0

Forward Current Vs.Forward Voltage

0.5

Rela

tive

Rad

aint

Powe

r

Radint Power Vs Forward Current

60

1000

WAVELENGTH (nm)900

1.0

0.5

100 3020 40 50

20100

Forward Voltage VF(V)

100

80

60

40

40

50

60

30

10

0

0.9

1.0

20

800700600

70

9080

0.1 0.2 0.60.4

0.8

0.7

0.5 0.3

RELA

TIV

E RA

DIAN

T IN

TENS

ITY

Spatial Distribution

If-Forward current (mA)

Forw

ard

Curr

ent

If(m

A)

Rad

iant

Po

wer

Rel

ativ

e V

alu

e at

IF=

20mA

1.5

IR1

0

Forward Current vs.Forward Voltage

1.00.8 1.2 1.4 1.6 1.8 2.0

20

30

40

50

60

-40 -20

1.0

1.5

2.0

Radint Power Vs.Ambient Temperature

SPEC NO: REV NO:A/2 DATE:July/29/2010 PAGE:4/4

Soldering: 1. Manual Of Soldering

The temperature of the iron tip should not be higher than 300and Soldering within 3 seconds per solder-land is to be observed.

2. DIP soldering (Wave Soldering): Preheating:120~150,within 120~180 sec. Operation heating:2455 within 5 sec.260(Max)

Gradual Cooling (Avoid quenching).