laser2000 diodes

Laser DiodesPage

Freespace Laser Diodes . . . . . . . . . . . . . . . . . . . . . . .2FP Laser Diodes, VIS & NIR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2FP Laser Diodes, 1310 & 1550nm . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3Ridge Waveguide Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4Tapered Cavity Laser Diodes & Amplifiers . . . . . . . . . . . . . . . . . . . . . . .6DFB Laser Diodes, VIS & NIR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8DFB Laser Diodes, 1310 & 1550nm . . . . . . . . . . . . . . . . . . . . . . . . . . . .9DBR Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10Broad Area Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12Laser Diode Bars & Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14Pump Engines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Pigtailed Laser Diodes . . . . . . . . . . . . . . . . . . . . . . .18Coaxial In-LineFP Laser Diodes, VIS & NIR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18FP & DFB Laser Diodes, 1310nm & 1550nm . . . . . . . . . . . . . . . . . . . . .19DFB Laser Diodes, 1270nm - 1610nm . . . . . . . . . . . . . . . . . . . . . . . . .20Butterfly Packaged Laser DiodesSM 1550nm <50mW For Digital Applications . . . . . . . . . . . . . . . . . . . . .22SM 1310 & 1550nm <50mW For Analogue Applications . . . . . . . . . . . .24SM NIR >100mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39MM NIR >1000mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50

Laser Diode Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . .54Low Power Laser Diode And TEC Drivers

Manual Controllers - 200 / 300 Series . . . . . . . . . . . . . . . . . . . . . . . . . .54

Manual And IEEE Controllers - 500 Series . . . . . . . . . . . . . . . . . . . . . .55

Manual And IEEE Controllers - 800 / 8000 Series . . . . . . . . . . . . . . . . .55

Laser Diode Mounts And Shielded Connection Cables . . . . . . . . . . . . .56

High Power And Array Drivers

CW Diode Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57

Pulsed Diode Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57

CW OEM Diode Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Pulsed OEM Diode Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Lase

r Dio

des

1 Laser 2000 (UK) Ltd. • Britannia House • Denford Road • Ringstead • Kettering • Northants • NN14 4DF

Date Created: 09/02/05

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Laser Diodes FP Laser Diodes, VIS & NIR

Telephone: 01933 461 666 • Fax: 01933 461 699 • e-mail: [email protected] • website: www.laser2000.co.uk2

Visible and Near Infrared Fabry -Perot Laser Diodes, Freespace

LD1xxx Series

Applications:• Optical sensing• Test and measurement equipment• Medical apparatus• Imaging and scanning systems

Laser 2000 provides a wide range of visible and near infrared free-space emittinglaser diodes. Laser diodes are provided at wavelengths from 635nm up to 980nmand beyond, and in peak output powers of 5-50mW. These laser diodes are providedin flat window TO style packages suitable for laboratory use or OEM integration.Their output is divergent and collimation optics should be used either to collect the light or to focus the output into a small area.

The laser output power varies with drive current and operating temperature. A fixed current can be used to drive the laser at a constant output power providedthat the external case temperature is unvarying. Similarly, varying the drive currentcan be used to modulate the output power at frequencies as high as 500MHz.Control of the temperature of the laser diode can be achieved using external temperature controllers and mounts. As these laser diode packages are too smallto include Peltier effect thermo-electric controllers (TEC), an external TEC is required.Laser 2000 provides laser diode mounts complete with built in TECs and temperaturetransducers. In this way, the laser temperature may be stabilised with a variation of only 1mK (subject to environmental conditions). Please refer to page 54.

The effect of this is to stabilise the laser diode output wavelength. In addition,the output power will remain constant if the laser diode is being driven in constant current mode.

Most of the Laser 2000 range of laser diodes also include internal photodiodes.These are built-into the laser package and sit alongside the laser chip on the lasersubmount. The function of these photodiodes is to monitor the output of the laserfrom the rear facet of the laser chip itself. The output of the photodiode is accessi-ble from the package pins and can be used to control the output power of the laserin constant power mode. Laser 2000 provides drive electronics that automaticallymaintain the output power of the laser diode and keep it constant to within ±0.05%.

These laser diodes are highly susceptible to damage. It is recommended that theyonly be operated with the Laser 2000 range of current controllers or with the Laser2000 range of laser diode modules.

* Bare laser diodes are sold without warranty **Sample data detailed above right

Laser Diode Typical Centre Output PowerCode # Wavelength (nm) (mW)

VISIBLELD1080 635 3LD1167 635 5LD1261 635 15LD1403 639 35LD1242 650 5LD1392 655 7LD1241 658 35LD1328 664 50LD1084** 670 5LD1180 670 7LD1185 670 10LD1417 685 60LD1318 690 35NEAR IRLD1420 785 5LD1231 785 50LD1182 785 60LD1348 785 75LD1450 790 100LD1376 808 100LD1238 830 40LD1441 860 100LD1433 910 50LD1371 980 50LD1370 980 100LD1372 980 250LD1394 980 300

All Package Stylesand Dimensions areDetailed on

All Package Stylesand Dimensions areDetailed on 1

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Laser Diodes FP Laser Diodes, 1310 & 1550


- - - -

1310nm & 1550nmLaser Diodes - Freespace

C-13-001-E-A / E-BC-15-001-E-A / E-B

• Uncooled FP laser diode with MQW structure• Operation at -40 to 85°C• High temperature operation without active cooling• Hermetically sealed active component• Built-in InGaAs monitor photodiode• Complies with Bellcore TA-NWT-000983

The C-13 and C-15 range of FP lasers are designed specifically for uncooledoperation across a broad temperature range, whilst delivering continuous un-interruptedoptical performance. These devices benefit from a unique Multi-Quantum Well(MQW) design that allows their operation over -40 to +85°C at maximum outputpower. Furthermore, these devices are highly suitable for high-speed modulation applications making them very economical solutions for telecoms and datacomsnetworking applications. In addition, the laser chips themselves have low thresholdpower and high quantum efficiencies

Each device is provided in a TO style laser diode package either with a flat windowdesign allowing them to be coupled to external optics, or with a lensed window designallowing them to be coupled efficiently directly into singlemode fibre without theneed for external collimation optics. Every unit is supplied with a rear facet photodiodemonitor built into the package and is hermetically sealed for maximum lifetime.

C-13 / C-15 Series

Absolute Maximum Ratings (Tc=25°C)Parameter Symbol C-13-001-E-A C-15-001-E-A

C-13-001-E-B C-15-001-E-BOptical Output Power mW Po 10 (CW) 6 (CW)LD Reverse Voltage V VRLD 2 2PD Reverse Voltage V VRPD 10 10PD Forward Current mA IFPD 1.0 1.0Operating Temperature °C Topr -40 - +85 -40 - +85Storage Temperature °C Tstg -40 - +85 -40 - +85

Light Outputvs. Forward Current

Forward Current (mA)

Ligh

t O

utpu

t (m

W)

0 20 40 60 80 100

25°C

10

8

6

4

2

0

= C-13-001-E-B

= C-15-001-E-B

-20°C

85°C

Optical and Electrical Characteristics(Tc=25°C) (C-13-001-E-A / B & C-15-001-E-A / B)Parameter Symbol Min. Typ. Max. Test ConditionSlope Efficiency

C-13-001-E-A mW/mA SE 0.3 0.35 - CW, Po=5mWC-13-001-E-B 0.2 0.3 -C-15-001-E-A 0.2 0.25 -C-15-001-E-B 0.15 0.18 -

Threshold Current mA Ith - 12 20 CW, Po=5mWOptical Output Power mW Po 5 - - CW, kink freePeak Wavelength

C-13-001-E-A / B nm λ 1290 1310 1330 CW, Po=5mWC-15-001-E-A / B 1520 1550 1580

Spectral Width nm ∆λ - 2 5 CW, Po=5mWForward Voltage V VF - 1.2 1.5 CW, Po=5mWBeam Divergence deg. θ / / - 20 - CW, Po=5mW,FWHM

θ⊥ - 40 -Rise / Fall Time ns tr / tf - - 0.5 Ibias=Ith ,10-90 %PD Monitor Current µA Im 100 - - CW,Po=5mW, VRPD=2VPD Dark Current µA IDARK - - 0.1 VRLD=5VPD Capacitance pF Ct - 6 15 VRLD=5V, f=1MHz

Ordering Codes

C13 = 1310 001 = Fabry-Perot A = Flat Window15 = 1550 B = Lensed

E

Laser Diode Wavelength Output Power(nm) (mW)

C-13-001-E-A 1310 5C-13-001-E-B 1310 5C-15-001-E-A 1550 5C-15-001-E-B 1550 5


All Package Stylesand Dimensions areDetailed on Page 21

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Laser Diodes Ridge Waveguide Laser Diodes


Ridge Waveguide LasersGaAs Semiconductor Laser Diodes

• High power • Single spatial mode• Numerous wavelengths as standard

The ridge waveguide of the ridge waveguide laser enables high single spatial modeoutput powers to be achieved at laser wavelengths in the 730-1110nm range.

Output powers of up to 150mW can be provided in the single spatial mode across a broad range of injection current.

The epitaxial layers of the ridge waveguide laser (RW series) are grown withMOVPE (metal organic vapour phase epitaxy). The ridge waveguide is achievedwith a photolithographic process and reactive ion etching. Typically the lasers aremounted in SOT packages with monitor diodes.

1 ground2 monitor (+)3 laser (+)

Package Dimensions

Ø9 Ø0.45

A

Ø7.

3

Ø6.

4

Ø3.

2

Ø2.

2

1.5

14

B

General Characteristics at Tamb 25°CSymbol Min. Typ. Max.

Spectral Width (FWHM) nm ∆λ - - 1Temp. Coeff. Of Wavelength nm/K TCλ - 0.3 -Divergence Parallel (FWHM) ° Θ - 10 -Divergence Perpendicular (FWHM) ° Θ⊥ - 30 -Mode Structure - - - Fundamental Mode -Operating Temperature °C Tcase 15 - 40Reverse Voltage V VR - - 0

12 3

Dimensions SOT01 SOT02A 2.45 3.65B 3.5 4.55

Ridge Waveguide LasersCentre Wavelength Output Slope Threshold Operating Max. Forward PackageWavelength Tolerance Power Efficiency Current Current Current (IF) Polarisation TypeProduct Code (nm) (± nm) (mW) (W/A) (mA) (mA) (mA)

EYP-RWL-0730-00010-SOT-02-00000 730 ±7 10 0.8 60 80 100 TM SOT-02EYP-RWL-0760-00020-SOT-01-00000 760 ±7 20 0.8 35 60 100 TM SOT-01EYP-RWL-0770-00025-SOT-01-00000 770 ±7 25 0.9 25 50 100 TM SOT-01EYP-RWL-0780-00100-SOT-01-00000 780 ±7 100 0.8 50 150 200 TM SOT-01EYP-RWL-0780-00100-SOT-01-00000 780 ±7 100 0.8 50 150 200 TM SOT-01EYP-RWL-0780-00100-SOT-02-00000 780 ±7 100 0.8 50 150 200 TM SOT-02EYP-RWL-0790-00100-SOT-02-00000 790 ±7 100 0.8 50 150 200 TM SOT-02EYP-RWL-0808-00100-SOT-01-00000 808 ±8 100 0.8 50 150 200 TE SOT-01EYP-RWL-0840-00130-SOT-02-00000 840 ±10 130 0.9 50 180 300 TE SOT-02EYP-RWL-0840-00200-SOT-02-00000 840 ±10 200 0.9 50 270 350 TE SOT-02EYP-RWL-0850-00130-SOT-02-00000 850 ±7 130 0.8 50 150 200 TE SOT-02EYP-RWL-0870-00100-SOT-02-00000 870 ±7 100 0.8 50 150 200 TE SOT-02EYP-RWL-0940-00100-SOT-02-00000 940 ±10 100 0.8 50 200 200 TE SOT-02EYP-RWL-0980-00150-SOT-02-00000 980 ±7 150 0.8 50 200 200 TE SOT-02EYP-RWL-01060-00100-SOT-01-00000 1060 ±7 100 0.8 30 160 200 TE SOT-01EYP-RWL-01080-0080-SOT-01-00000 1080 ±10 80 0.7 30 130 150 TE SOT-01EYP-RWL-01110-0050-SOT-02-00000 1110 ±10 50 0.2 70 200 200 TE SOT-02

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Laser Diodes Ridge Waveguide Lasers With AR Coating


Ridge Waveguide Lasers With AR CoatingGaAs Semiconductor Laser Diodes

• 735 to 1090nm available• Anti-reflective endface coating• Wide tuning range

These ridge waveguide amplifiers deliver up to 150mW of output power at wavelengthsin the range 735-1090nm. They are provided with anti reflection coatings of <3E-4at the front facet and are designed for use as the heart of an external cavity tunablelaser in either Littman or Littrow configurations.

The epitaxial layers are produced using a MOVPE process. Reactive Ion Etching (RIE)is used for the ridge processing. The lasers are mounted into open SOT packages.

The optical output power is defined by the feedback of the external resonator.

General Characteristics at Tamb 25°C, Standard Coating (Rf~0,06), For Reference OnlySymbol Min. Typ. Max.

Divergence Parallel (FWHM) ° Θ - 10 -Divergence Perpendicular (FWHM) ° Θ⊥ - 30 -Mode Structure - - Fundamental ModeOperating Temperature °C Tcase 15 - 40Reverse Voltage V VR - - 0


Package Dimensions

Ø9 Ø0.45

A

Ø7.

3

Ø6.

4

Ø3.

2

Ø2.

2

1.5

14

B

12 3

Dimensions SOT01 SOT02A 2.45 3.65B 3.5 4.55

Ridge Waveguide LasersCentre Wavelength Tuning Output Slope Threshold Operating Max. Forward PackageWavelength Tolerance Range Power Efficiency Current Current Current (IF) Polarisation TypeProduct Code (nm) (± nm) (nm) (mW) (W/A) (mA) (mA) (mA)

EYP-RWE-0740-02000-1000-SOT-01-0000 740 ±7 720-740 5 0.9 35 80 100 TM SOT-01EYP-RWE-0760-03000-1000-SOT-01-0000 760 ±7 730-760 5 0.9 35 80 100 TM SOT-01EYP-RWE-0780-02000-0750-SOT-01-0000 780 ±7 760-780 100 0.9 50 200 200 TM SOT-01EYP-RWE-0790-04000-0750-SOT-01-0000 790 ±7 750-790 100 0.9 50 200 200 TM SOT-01EYP-RWE-0840-06010-1500-SOT-01-0000 840 ±7 780-850 100 0.8 30 200 200 TE SOT-01EYP-RWE-0870-06010-0750-SOT-01-0000 865 ±5 810-880 100 0.8 30 200 200 TE SOT-01EYP-RWE-0980-02000-2010-SOT-01-0000 940 ±10 900-1000 100 0.8 30 160 200 TE SOT-01EYP-RWE-0940-08000-0750-SOT-01-0000 980 ±7 900-1000 100 0.8 30 160 200 TE SOT-01EYP-RWE-0980-08020-0750-SOT-01-0000 1070 ±10 960-1080 100 0.8 30 160 200 TE SOT-01

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Laser Diodes Tapered Lasers


Tapered LasersGaAs Semiconductor Laser Diodes

• High output power• Excellent beam quality • Narrow spectral linewidth• Easy coupling into SM fibre

Tapered lasers deliver high output powers whilst maintaining good beam quality for coupling into fibres. These lasers are particularly useful for those applicationswhere high brightness is required.

Lasers are grown with an aluminium-free active region using MOVPE and are subsequently micromachined to form to tapered laser cavities. The lasers are provided mounted on open C-mount heatsinks.

Typically laser systems built with these lasers achieve up to 3W of output power at wavelengths in the range 735 to 1080nm. The estimated reliability of these laserchips when running at 2W is greater than 2,000 hrs.

(-)

Emission

1.3

2.752.3

4.66.4

6.8

2.8

0.4

-0.1

5


Spectral Width (FWHM) nm ∆λ - 2 4Temp. Coeff. Of Wavelength nm/K TCλ - 0.3 -Slope Efficiency W/A ηd 0.8 0.9 -Threshold Current mA Ith 400 600 800Wall Plug Efficiency % η - 35 -Cavity Length µm Ic - 2750 -Output Aperture (At Front Side) µm - - 190 -Divergence Parallel (FWHM) ° Θ 12 15 18Divergence Perpendicular (FWHM) ° Θ⊥ - 28 -Optical Power In Central Lobe % - - 80 -Beam Profile In Central Lobe (1/e2) - M2 - 1.5 -Astigmatism µm - - 500 750Operating Temperature °C Tcase 0 - 40Reverse Voltage V VR - - 0

Tapered LasersCentre Wavelength Output Operating Max Forward PackageWavelength Tolerance Power Current Current (IF) Polarisation TypeProduct Code (nm) (± nm) (mW) (mA) (A)

EYP-TPL-0735-01000-3006-CMT03-0000 735 5 1000 2500 2 TM CEYP-TPL-0780-00750-3006-CMT03-0000 780 5 750 2500 2 TM CEYP-TPL-0808-01000-3006-CMT03-0000 808 5 1000 2500 2 TE CEYP-TPL-0808-02000-3006-CMT03-0000 808 5 2000 2800 2.8 TE C

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Laser Diodes Tapered Amplifiers


Emission

1.3

2.752.3

4.66.4

6.8

2.8

0.4

-0.1

5Tapered AmplifiersGaAs Semiconductor Laser Diodes

• Tunable

These amplifier cavities deliver up to 3W (1 .. 1.5W typically) of output power atwavelengths in the range 735-1080nm. They are provided mounted n a 2.75mmthick C mount for injection seeding for amplification of external solid state sources.The high power allows them to be used as an intermediate amplification stage infrequency conversion applications or to improve signal to noise in detection systems.

Tapered amplifiers provide all of the benefits of the tapered laser cavity: high powerwith excellent beam quality and narrow linewidth. The estimated reliability of theselaser chips when running at 2W is greater than 2,000hrs.


Saturation Power mW - - 50 -Cavity Length mm Ic - 2.75 -Input Aperture (At Rear Side) µm - - 3 -Output Aperture (At Front Side) µm - - 190 -Divergence Perpendicular (1/e2) ° Θ⊥ - 28 -Operating Temperature °C Tcase 0 - 40Reverse Voltage V VR - - 0

(-)

Tapered AmplifiersProduct Code Centre Wavelength Gain Max Output Operating Max. Forward PackageWavelength tolerance Width Amplification Power Current Current (IF) Polarisation typenm ± nm nm dB mW mA (A)EYP-TPA-0765-00000-3006-CMT03-0000 765 5 6 16 1500 2700 3.5 TM CEYP-TPA-0780-00000-3006-CMT03-0000 780 5 8 13 500 1500 3 TM CEYP-TPA-0795-00000-3006-CMT03-0000 795 10 8 13 500 1500 3 TM CEYP-TPA-0840-00000-3006-CMT03-0000 840 - 30 13 500 1500 2.5 TE CEYP-TPA-0915-00000-3006-CMT03-0000 915 15 20 13 1500 3000 5.5 TE CEYP-TPA-0970-00000-3006-CMT03-0000 970 - 40 13 500 1500 2.5 TE CEYP-TPA-1080-00000-3006-CMT03-0000 1080 - 50 13 500 1500 2.5 TE C

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Laser Diodes Distributed Feedback Lasers


Ø9 Ø0.45

3.65

Ø7.

3

Ø6.

4

Ø3.

2

Ø2.

21.

5

144.

55

Distributed Feedback LasersGaAs Semiconductor Laser Diodes

PackageDimensions

SOT02

1


2 3

Package InformationPart No.

SOT 9mm x 3.65mm, SOT02 available

sealed cap (see image)

others on request

Package DimensionsSOT02

Emission plane mm 3.65

C-Mount Thickness mm 9

Package PinoutSOT0n

Ground 1

Laser (+) 3

Monitor Photo Diode (+) 2

EYP-DFB-0763-00050- EYP-DFB-0773-00075- EYP-DFB-0780-00080-1500-SOT02-0000 1500-SOT02-0000 1500-SOT02-0000

EYP-DFB-0784-00100- EYP-DFB-0860-00150- EYP-DFB-0923-00100-1500-SOT02-0000 1500-SOT02-0000 1500-SOT02-0000

Characteristics at Tamb 25°C

Parameter Symbol Min Typ Max Min Typ Max Min Typ MaxCentre Wavelength nm λC 762 763 764 772 773 774 779 780 781Spectral Width (FWHM) nm ∆λ - - 10 - - 10 - - 10Output Power W Popt 40 50 - 50 75 - 70 80 -Threshold Current mA Ith 40 50 70 40 50 70 40 50 70

@50mW @75mW @80mW

Operational Current A IOp - 150 180 - 150 180 - 150 180Polarisation - - - TM - - TM - - TM -

Parameter Symbol Min Typ Max Min Typ Max Min Typ MaxCentre Wavelength nm λC 783 784 785 859 860 861 922 923 925Spectral Width (FWHM) nm ∆λ - - 10 - - 10 - - 10Output Power W Popt 80 100 - 100 150 - 80 100 -Threshold Current mA Ith 40 50 70 60 70 90 40 60 80

@100mW @150mW @100mW

Operational Current A IOp - 150 180 - 230 250 - 180 200Polarisation - - - TM - - TE - TE -

Recommended Operation Conditions Absolute Maximum RatingsOperational Temp. At Case (Tcase) Max Forward Max. Operational Max . Forward Max. Reverse

Min Typ Max Current (IF) Temp. At Case (Tc) Current (IF) Voltage (VR)EYP-DFB-0860-00150-1500-SOT02-0000 15°C - 40°C 180mA 50°C 200mA 0VAll Others 15°C - 40°C 230mA 50°C 250mA 0V


Temp. Coeff. Of Wavelength nm/K TCλ - 0.08 -Slope Efficiency W/A ηd 0.6 0.8 1Cavity Length µm Ic - 1500 -Divergence Parallel (FWHM) ° Θ 6 8 10Divergence Perpendicular (FWHM) ° Θ⊥⊥ 18 21 24Mode Structure Fundamental Mode

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Laser Diodes Distributed Feedback Lasers


- - - -

1310nm & 1550nmLaser Diodes - Freespace

C-13-DFB-E-A-NT / B-NTC-15-DFB-E-A-NT / B-NT

• Uncooled FP & DFB laser diode with MQW structure• Operation at -40 to 85°C• High temperature operation without active cooling• Hermetically sealed active component• Built-in InGaAs monitor photodiode• Complies with Bellcore TA-NWT-000983

The Laser 2000 range of 1310 and 1550nm DFB laser diodes, utilisea unique multi-quantum well design to achieve narrow linewidth withhigh side mode suppression ratio. The diodes themselves are suitablefor continuous output at elevated temperatures with little variation inquantum efficiency. Furthermore, the linearity of the devices isexceptional making them highly suited to demanding applicationsover a wide temperature range.

* 0.15nsec option available, suitable for use @ 2.5Gb/sec

Absolute Maximum Ratings (Tc=25°C)Parameter Symbol C-13-DFB-E-A-NT C-15-DFB-E-A-NT

C-13-DFB-E-B-NT C-15-DFB-E-B-NTOptical Output Power mW Po 10 (CW) 6 (CW)LD Reverse Voltage V VRLD 2 2PD Reverse Voltage V VRPD 10 10PD Forward Current mA IFPD 2 2Operating Temperature °C Topr 0 - +70 0 - +70Storage Temperature °C Tstg -40 - +100 -40 - +100

Light Outputvs. Forward Current

Threshold vs.Case Temperature

Slope Efficiencyvs. Case Temperature

Peak Wavelengthvs. Case Temperature

Forward Current (mA)

Ligh

t O

utpu

t (m

W)

Thr

esho

ld C

urre

nt (

mA

)

Slo

pe E

ffici

ency

(m

W/m

A)

Pea

k W

avel

engt

h (n

m)

(for

C-1

3-D

FB

-E-A

-NT

) Peak W

avelength (nm) (for C

-15-DF

B-E

-A-N

T)

Case Temperature (°C)

Case Temperature (°C) Case Temperature (°C)

0 20 40 60 80 100 -20 0 20 40 60 80

-20 0 20 40 60 80 -20 0 20 40 60 80

0°C25°C 70°C

10

8

6

4

2

0

0.6

0.5

0.4

0.3

0.2

0.1

0

1340

1330

1320

1310

1300

1290

1280

1270

1580

1570

1560

1550

1540

1530

1520

1510

10

1

= C-13-DFB-E-A-NT = C-15-DFB-E-A-NT

Optical and Electrical Characteristics(Tc=70°C) (C-13-DFB-E-A-NT / B-NT & C-15-DFB-E-A-NT / B-NT)Parameter Symbol Min. Typ. Max Test conditionThreshold Current mA Ith - - 50 CW,Po=5mWPeak power current mA IPeak - - 100 CW,Po=8mW

Optical and Electrical Characteristics(Tc=25°C) (C-13-DFB-E-A-NT / B-NT & C-15-DFB-E-A-NT / B-NT)Parameter Symbol Min. Typ. Max Test conditionSlope Efficiency

C-13-DFB-E-A-NT mW/mA SE 0.28 0.36 - CW, Po=5mWC-13-DFB-E-B-NT 0.20 0.28C-15-DFB-E-A-NT mW/mA SE 0.15 0.25 - CW, Po=5mWC-15-DFB-E-B-NT 0.12 0.18

Threshold Current mA Ith - 10 15 CW, Po=5mWOptical Output Power mW Po 5 - - CW, kink freePeak WavelengthC-13-001-E-A-NT / B-NT nm λ 1295 1310 1325C-15-001-E-A-NT / B-NT nm λ 1535 1550 1565

Side Mode Suppression dB Sr 30 35 - CW, Po=5mW(0 - 70°C)Forward Voltage V VF - 1.2 1.5 CW, Po=5mWBeam Divergence deg. θ / / - 27 - CW, Po=5mW,FWHM

θ⊥ - 32 -Rise / Fall Time* ns tr / tf - - 0.5* Ibias=Ith ,10-90 %PD Monitor Current µA Im 100 200 800 CW,Po=5mW, VRPD=2VPD Dark Current µA IDARK - - 0.1 VRPD=5VPD Capacitance pF Ct - 6 15 VRPD=5V, f=1MHzNote: Selected wavelength is available for WDM application

Ordering Codes

C13 = 1310 DFB = DFB A = Flat Window15 = 1550 B = Lensed

E

Laser Diode Wavelength Output Power(nm) (mW)

C-13-DFB-E-A-NT 1310 5C-13-DFB-E-B-NT 1310 5C-15-DFB-E-A-NT 1550 5C-15-DFB-E-B-NT 1550 5



C-13 / C-15 Series

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Laser Diodes DBR Laser Diodes


EYP-DBR-1061-00100- EYP-DBR-1063-00100- EYP-DBR-1083-00080-2000-TO-03-0000 2000-TO-03-0000 2000-TO-03-0000

DBR LasersWavelength Adjustable


TO-3 Package With Sealed Cap TO-03 available (see image)

Others on request


Parameter Symbol Min Typ Max Min Typ Max Min Typ MaxCentre Wavelength nm λC 1060 1061 1062 1062 1063 1064 1081 1083 1084Output Power W Popt - 100 120 - 100 120 - 75 100Slope Efficiency W/A ηd 0.6 0.8 0.9 0.6 0.8 0.9 0.5 - 0.8

@100mW @100mW @80mWOperational Current A IOp - 180 250 - 180 250 - 170 200

Divergence ° Θ⊥ - 33 - - 33 - - 35 -perpendicular (FWHM)

Polarisation - - - TE - - TE - - TE -

Recommended Operation Conditions Absolute Maximum RatingsOperational Temp. At Case (Tcase) Max Forward Max. Operational Max . Forward Max . Heat Max. Reverse

Min Typ Max Current (IF) Temp. At Case (Tc) Current (IF) Current (Iheat) Voltage (VR)EYP-DBR-1083-00080-2000-TO-03-0000 15°C - 40°C 180mA 50°C 200mA 300mA 0VAll Others 15°C - 40°C 230mA 50°C 250mA 300mA 0V


Spectral Width (FWHM) MHz ∆υ - - 100Tuning Range (Without Mode Hops)* GHz ∆vtun - 100 -Tuning Range (Total)** nm ∆λtun - 2 -Temp. Coeff. of Wavelength nm/K TCλ - 0.08 -Threshold Current mA Ith - - 50Heat Current DBR Section mA IheatDBR - - 250Heat Current Phase Section mA IheatPhase - - 250Cavity Length µm Ic - 2000 -Divergence Parallel (FWHM) ° Θ - 10 -Mode Structure - - Fundamental Mode* Tuning DBR & Phase Section ** Tuning DBR Section Only

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Laser Diodes Broad Area Laser Diodes


Broad Area LasersGaAs Semiconductor Laser Diodes

heatspreader

mounting wire

(-)

diode laser bondwires

Emission

1.3

2.12.3

4.66.4

6.8

2.8

0.4

-0.1

5


c-Mount 2.00 mm CMT02 available (see image)

others on request

Package DimensionsCMT02

Emission plane mm 7.2 -0.15

C-Mount Thickness mm 2

Package PinoutCMT0n

Cathode (-) Mounting wire

Anode (+) Housing

Recommended Operation Conditions Absolute Maximum RatingsOperational Temp. At Case (Tcase) Max Forward Max. Operational Max . Forward Max. Reverse

Min Typ Max Current (IF) Temp. At Case (Tc) Current (IF) Voltage (VR)EYP-BAL-0920-01500-2010-CMT02-0000 15°C - 40°C 2A 50°C 2.2A 0VEYP-BAL-0940-02000-2010-CMT02-0000 15°C - 40°C 2.5A 50°C 3.2A 0VEYP-BAL-0980-02000-2010-CMT02-0000 15°C - 40°C 2A 50°C 3A 0VEYP-BAL-1060-02000-2010-CMT02-0000 15°C - 40°C 2.8A 50°C 3.5A 0VEYP-BAL-1120-01500-2010-CMT02-0000 15°C - 40°C 3A 50°C 3.5A 0VAll Others 15°C - 40°C 1.8A 50°C 2A 0V

General Characteristics at Tamb 25°CSymbol Typ.

Cavity Length µm lc 2000Stripe Width µm Ws 100*

* Except EYP-BAL-0940-02000-2010-CMT02-0000 (60µm)

EYP-BAL-0740-01000- EYP-BAL-0760-01500- EYP-BAL-0765-01500- EYP-BAL-0790-01500- EYP-BAL-0808-01500-2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000

EYP-BAL-0920-01500- EYP-BAL-0940-02000- EYP-BAL-0980-02000- EYP-BAL-1060-02000- EYP-BAL-1120-01500-2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000 2010-CMT02-0000


Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ MaxCentre Wavelength nm λC 733 740 747 757 760 763 762 765 768 785 790 795 805 808 811Spectral Width (FWHM) nm ∆λ - 2 - - 2 - - 2 - - 2 - - 2 -Temp. Coeff. of Wavelength nm/K TCλ - 0.3 - - 0.3 - - 0.3 - - 0.3 - - 0.3 -Output Power W Popt - 1.5 - - 1.5 - - 1.5 - - 1.5 - - 1.5 -Slope Efficiency W/A ηd 0.9 1 1.1 0.9 1 1.1 0.9 1 1.1 0.9 1 1.1 0.9 1 1.1Threshold Current mA Ith 350 450 - 350 450 500 - 700 - 350 420 500 350 420 500

@1W @1.5W @1.5W @1.5W @1.5W

Operational Current A IOp - 1.5 1.8 - 1.8 2 - 1.8 2 - 1.8 2 - 1.8 2Operational Voltage V UOp - 2 - - 2 - - 2 - - - 2 - 2 -Divergence parallel (FWHM) ° Θ 5 8 11 5 8 11 5 8 11 5 8 11 5 8 11Divergence ° Θ⊥ 22 27 30 22 27 30 22 27 30 22 27 30 22 27 30

perpendicular (FWHM)Polarisation - - - TM - - TM - - TM - - TM - - TM -

Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ MaxCentre Wavelength nm λC 915 920 925 930 940 945 975 980 985 1055 1060 1070 1115 1120 1125Spectral Width (FWHM) nm ∆λ - 3 - - 3 - - 3 - - - 5 - - 5Temp. Coeff. of Wavelength nm/K TCλ - 0.35 - - 0.35 - - 0.35 - - 0.4 - - 0.4 -Output Power W Popt - 1.5 - - 2 - - 2 - - 2 2.2 - 1.5 -Slope Efficiency W/A ηd 0.8 0.9 - 0.8 0.9 - 0.8 0.9 - 0.7 0.8 - 0.7 0.8 -Threshold Current mA Ith - 0.4 0.5 - 0.3 0.5 - 0.4 0.5 - 0.4 0.5 - 0.4 0.5

@1.8W @2W @2W @2W @1.5W

Operational Current A IOp - 2 - - 3 - - 2.5 - - 2.8 3.5 - 2.4 3Operational Voltage V UOp - 1.6 2 - 1.6 2 - 1.6 2 - 1.6 2 - 1.6 2Divergence parallel (FWHM) ° Θ - 8 12 - 8 12 - 8 12 - 8 15 - 8 15Divergence ° Θ⊥ - 27 35 - 27 35 - 27 35 - 33 37 - 33 37

perpendicular (FWHM)Polarisation - - - TE - - TE - - TE - - TE - - TE -

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Laser Diodes


Broad Area Laser Diodes

High Power Laser On SubmountLU0808B050

• Up to 5W operation power• Wavelength 800 - 812nm• Wavelength 780 - 920nm on request• Proven reliability for high power operation• MTTF > 10,000h• Mounting on Lumics DC60 or B-mount

The Lumics LU0808B050 laser chip on submount contains an optimised InGaAsP /GaInP / AIGaAs quantum well high power laser on GaAs substrate. The extremelystringent reliability requirements are achieved through our patent pending innovativetechnology. This includes careful design, exactly defined manufacturing and extensivetesting. The qualification contains life time tests and a set of thermal and mechanicaltests. Each laser chip is individually serialised for traceability and is shipped with aspecified set of test data.

Characteristics (at 800nm, 25°C and Begin of Life (BOL))Parameter Conditions Symbol Min Typ Maxcw Operating Power W at 25°C Pop 5 - -Operating Forward Current A - Iop - 5.5 6.5Threshold Current mA - Ith - 525 700Forward Voltage V at Iop, Top Vop - 2.0 2.5Slope Efficiency W/A at Iop, Top ηdiff 0.95 1.05 -Peak Wavelength (1) nm at Iop, Top λpeak 800 808 812Spectral Width (FWHM) nm at Iop, Top λrms - 3 -Beam Divergence (Horizontal) deg at Iop, Top - - 8 10Beam Divergence (Vertical) deg at Iop, Top - - 30 35AR Reflectivity (2) % - rf - 3 -HR Reflectivity % - rr - 95 -Emitting Dimension (W x H) µm - - - 100 x 1 -Spectral Shift With Temp. nm/K - λT_Shift - 0.3 -(1) To be specified in the range of 780 - 920nm (2) Optionally other coatings are offered on request

Absolute Maximum RatingsParameter Symbol Min MaxForward Current A IF, max - 6.2Reverse Voltage V VR, max - 1.5Storage Temp. °C Tmax -20 70Processing Temp.

°C TS, max - 190B-mount, max. 10secExtended wavelength range from 780nm to 920nm on request

PowerVoltage

7.00

6.00

5.00

4.00

3.00

2.00

1.00

0.00

4.00

3.50

3.00

2.50

2.00

1.50

1.00

0.50

0.000.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00

Current (A)

Pow

er (

W) V

oltage (V)

0.5mm

2mm

front facet

2.9m

m

2.2m

m0.

5mm

0 -

20µm

0 -

10µm

R<10µm

Lumics DC60 Submount

Chip p-side down mounted onto Lumics DC60 submount or B-mount.Customised versions with other submount sizes, operation power levelsand wavelengths are available on request.

6.01.2

0.60.5

1.2

1.02.0

2.9

2.2 2.

9

3.0

1.9

0.15

3.0 3.5

Copper body (OFHC)Plating: MgMo/2.5µmNi/(1-4)µmAu

Solder tab copperPlating: Ni/(1-3)µmAu plated Front Facet

Notes to B-mounting blocks:- Material: (OFHC) Cu,

mounting surface with RA=0.2µm- plated with Au over Ni

Lumics B-Mount

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Laser Diodes


Broad Area Laser Diodes

High Power Single Emitter Laser Diode

LU0975B050

• Up to 5W operation power• Wavelength 970 - 980nm• Wavelength 970 - 1070nm on request• Proven reliability for high power operation• MTTF > 10,000h• Mounting on Lumics DC60 or B-mount

The Lumics LU0975B050 laser chip on submount contains an optimised GaAs /AIGaAs / InGaAs quantum well high power laser. The extremely stringent reliabilityrequirements are achieved through our patent pending innovative technology. Thisincludes careful design, exactly defined manufacturing and extensive burn-in testing.The qualification contains life time tests and a set of thermal and mechanical tests.Each laser chip is individually serialised for traceability and is shipped with a specifiedset of test data. Applications are in fibre laser pumping, fibre amplifier, printing ormedical treatment.

Characteristics (at 975nm, 25°C and Begin of Life (BOL))Parameter Conditions Symbol Min Typ Maxcw Operating Power W at 25°C Pop 5 - -Operating Forward Current A - Iop - 6.0 6.5Threshold Current mA - Ith - 250 350Forward Voltage V at Iop, Top Vop - 1.8 2.2Slope Efficiency W/A at Iop, Top ηdiff 0.8 0.85 -Peak Wavelength (1) nm at Iop, Top λpeak 970 975 980Spectral Width (FWHM) nm at Iop, Top λrms - 3 5Beam Divergence (Horizontal) deg at Iop, Top - - 9 11Beam Divergence (Vertical) deg at Iop, Top - - 30 34AR Reflectivity (2) % - rf - 2 -HR Reflectivity % - rr - 95 -Emitting Dimension (W x H) µm - - - 100 x 1 -Spectral Shift With Temp. nm/K - λT_Shift - 0.3 -Operating Temperature °C - Top 20 25 30(1) To be specified in the range of 920 - 1070nm (2) Optionally other coatings are offered on request

Absolute Maximum RatingsParameter Symbol Min MaxForward Current A IF, max - 6.2Reverse Voltage V VR, max - 1.5Storage Temp. °C Tmax -20 70Processing Temp.

°C TS, max - 190B-mount, max. 10secExtended wavelength range from 780nm to 920nm on request

PowerVoltage

8.00

7.00

6.00

5.00

4.00

3.00

2.00

1.00

0.00

4.00

3.50

3.00

2.50

2.00

1.50

1.00

0.50

0.000.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00

Current (A)

Pow

er (

W) V

oltage (V)

0.5mm

2mm

front facet

2.9m

m

2.2m

m0.

5mm

0 -

20µm

0 -

10µm

R<10µm

Lumics DC60 Submount

Chip p-side down mounted onto Lumics DC60 submount or B-mount.Customised versions with other submount sizes, operation power levelsand wavelengths are available on request.

6.01.2

0.60.5

1.2

1.02.0

2.9

2.2 2.

9

3.0

1.9

0.15

3.0 3.5

Copper body (OFHC)Plating: MgMo/2.5µmNi/(1-4)µmAu

Solder tab copperPlating: Ni/(1-3)µmAu plated Front Facet

Notes to B-mounting blocks:- Material: (OFHC) Cu,

mounting surface with RA=0.2µm- plated with Au over Ni

Lumics B-Mount

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Laser Diodes Laser Diode Bars & Arrays


Near IR ArraySubmodules

ASMxxxxxx

• 20W to 90W CW output power• 50W to 150W pulsed power• 808nm / 940nm / 980nm output• Excellent solderability• Lot tested• Single, two or three bar emitter

2-Bar Laser Diode Array1-Bar Laser Diode Array 3-Bar Laser Diode ArrayMounted Diode Bars ASM01C020 ASM06C040 ASM01P050 ASM01P100 ASM02C040 ASM12C070 ASM03P100 ASM05C060 ASM14C090 ASM05P150

The CEO range of laser diode bars is availablepackaged into an array submodule to form thefundamental building block for constructinghigh power diode arrays. Known as a SilverBullet it is a packaged, high power laser diodewith exceptional thermal properties designedfor OEM integration.

Each Silver Bullet consists of one, two or threemounted, CW or pulsed laser diodes on a BeOsubstrate.

Heat ExchangerAs laser diode arrays produce a large amountof heat, the silver bullet must be soldered onto

Diode bar

End block

Metalised BeO

Bar Dimensions: 9.6 x 0.135 mmPackage Thermal Resistance: 0.4°C/WSoldering: Maximum soldering temperature is 100°C. Indalloy 8 or Ostalloy 200(44In42Sn14Cd) are recommended solders.

2 Bar SilverBullet

3 Bar SilverBullet

a heat exchanger. A range of heat exchangersis available through Laser 2000 specifically foruse with the silver bullet arrays. Alternativelysilver bullets may be mounted on customersupplied heat exchangers. The required heatexchanger capacity is 2.5 times the poweroutput and must have a thermal resistance of <0.25 °C cm2/W.

1.70.0122.1

35253

-20 to 50-40 to 85

1.70.0102.2

50253

-20 to 50-40 to 85

1.70.0102.2

70253

-20 to 50-40 to 85

1.60.0062.2

70253

-20 to 50-40 to 85

<5.1<0.036

6.3

35253

-20 to 50-40 to 85

<3.4<0.020

4.4

35253

-20 to 50-40 to 85

<3.4<0.020

4.4

70253

-20 to 50-40 to 85

<5.1<0.036

6.3

35253

-20 to 50-40 to 85

<5.10.0306.6

50253

-20 to 50-40 to 85

<5.10.0308.1

70253

-20 to 50-40 to 85

CW60-

307.53.236

46 x 380 x 1200

792-812< ± 4<3.1

<0.27<42x<12

TE3-

CW90-

49142.332

46 x 380 x 1200

792-812< ± 4<2.5

<0.27<42x<12

TM3-

Pulsed-

15055123.345

72 x 390 x 1133

792-812< ± 4<2.5<0.27

<42x<12TE

-

5

CW40-

287.51.840

46 x 280 x 1200

792-812< ± 4<4.0

<0.27<42x<12

TE3-

CW70-

52142.035

46 x 280 x 1200

792-812±43.0

0.2742x12

TM3-

Pulsed-

10055132.245

72 x 290 x 1133

792-812± 4

<2.5<0.27

<42x<12TE

-

5

CW20-

267.51.14246

80 x 1200

792-812± 41.9

<0.27<42x<12

TE3-

CW40-

55141.03846

80 x 1200

792-812± 4

<2.0<0.27

<42x<12TM3-

Pulsed-

5055131.14072

90 x 1133

792-812± 4

<2.5<0.27

<42x<12TE-5

Pulsed-

100110181.04560

150 x 1160

792-812±4

<2.50.25

<42x<12TM-5

10mm

6.38mm

High Power Building blocks.High power diode bars may be built into arraysincorporating any number of bars. Standard arraysare available with up to 160W of continuous outputpower. In principle, the only restriction on thenumber of bars in an array is the ability to supplycurrent and remove the excess heat.Heat removal is essential. Standard arrays require the removal of 2.5x the average poweroutput in heat through a heat exchanger with<0.25°C.cm2/W. This can be achieved usingPeltier coolers or re-circulating water chillers.Some mounts are designed for water flow cooling.

Driving Laser Diode ArraysLaser diode arrays can be driven using any of the drivers detailed on page 57ff.

Temporal ModeCW Power Output WPeak Pulse Power (1kHz 150µs) WOperating Current AThreshold Current ASlope Efficiency W/AEfficiency %Number of Emitters per BarEmitter Size µmEmitter Pitch µmCentre Wavelength nmWavelength Tolerance (max) nmSpectral Width (max) nmWavelength Shift (max) nm/°CBeam Divergence FWHM (max) ° x °PolarisationCW Degradation Rate %/kHr

Pulsed Degradation Rate %/Gshots

Built-in Voltage (max) VSeries Resistance (max) ΩOperating Voltage (max) VAbsolute Maximum RatingsForward Current AReverse Current µAReverse Voltage VOperating Temperature °CStorage Temperature °C

1.73mm

ASMxxxxxx

Up to 90W @ 808nm!Up to 90W @ 808nm!

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ARR18C020G package

ARR20C040E1 package

ARR26C040Cs package

ARR01C060Derringer

ARR02C120ARR02C240Six Shooter

G E W2 E1 Cs Derringer 6Shooter 6Shooter A G Y Z Y ZPackage Type:Laser Diode Array Modules ARR18C020 ARR20C020 ARR29C020 ARR26C040 ARRCSC040 ARR01C060 ARR02C120 ARR02C240 ARR21P300 ARR18P400 ARR03P1900 ARR04P2500 ARR03P3000 ARR04P3900

1.60.005

351.8253

-20 to 50-40 to 85

1.60.005

351.8253

-20 to 50-40 to 85

1.60.008

351.8253

-20 to 50-40 to 85

1.60.006

601.8253

-20 to 50-40 to 85

1.60.016

601.8253

-20 to 50-40 to 85

4.80.024

355.4253

-20 to 50-40 to 85

9.60.048

359.6253

-20 to 50-40 to 85

19.20.096

3521.6253

-20 to 50-40 to 85

9.60.036

1270253

-20 to 50-40 to 85

12.80.064

16.070253

-20 to 50-40 to 85

86.40.432

10860253

-20 to 50-40 to 85

115.20.576

14460253

-20 to 50-40 to 85

134.40.672

16860253

-20 to 50-40 to 85

179.20.896

22460253

-20 to 50-40 to 85

CW20-

287.51.14246

80 x 1200808± 31.90.25

40 x 10TE3-

CW20-

287.51.14246

80 x 1200808±31.90.25

40 x 10TE3-

CW20-

277.51.04046

80 x 1200808± 31.90.25

40 x 10TE3-

CW40-

559

1.054046

80 x 1200808± 31.90.25

40 x 10TM3-

CW40-

559

0.953846

80 x 1200808± 32.00.25

40 x 10TM3-

CW60-

287.53.342

46 x 380 x 1200808± 31.90.25

40 x 10TE3-

CW120

-

287.56.642

46 x 680 x 1200808± 31.90.25

40 x 10TE3-

CW240

-

287.515.242

46 x 1280 x 1200808±33.00.25

40 x 10TE3-

Temporal ModeCW Power Output (min) WPeak Pulse Power W

(1kHz 150µs)

Operating Current AThreshold Current ASlope Efficiency W/AEfficiency %Number of Emitters Emitter Size µmEmitter Pitch µmCentre Wavelength nmWavelength Tolerance nmSpectral Width nmWavelength Shift nm/°CBeam Divergence FWHM ° x °PolarisationCW Degradation Rate %/kHr

Pulsed Degradation Rate %/Gshots

Built-in Voltage VSeries Resistance ΩAbsolute Maximum RatingsForward Current AOperating Voltage VReverse Current µAReverse Voltage VOperating Temperature °CStorage Temperature °C

Pulsed-

300

60136.540

72 x 690 x 1133808± 32.00.25

40 x 10TE-5

Pulsed-

400

55138.840

72 x 890 x 1133808± 32.00.25

40 x 10TE-5

Pulsed-

19000

5513

59.440

72 x 5490 x 1133.3808±34.00.25

40 x 10TE -5

Pulsed-

2500

5513

79.240

72 x 7290 x 1133.3808±34.00.25

40 x 10TE-5

Pulsed-

3000

5513

92.440

72 x 8490 x 1133.3808±34.00.25

40 x 10TE-5

Pulsed-

3900

5513

123.240

72 x 11290 x 1133.3808±34.00.25

40 x 10TE-5

The ARR01C060 is also provided with waterhose connections points. Pulsed diodes mayalso be mounted in the same mounting configurations. Laser diodes bars are available in a range of other wavelengths from 780nmthrough to 980nm.

Laser 2000 is also able to supply higher power and custom arrays. For further information, please contact Laser 2000.

Driving Laser Diode ArraysLaser diode arrays may be driven using any of the drivers detailed on page 57ff.

CW laser diode arrays

A Package G Package

Near IR CW and Pulsed ArraysARRxxCxxx / ARRxxPxxxx

• CW arrays from 20 to 160W• Variety of package options• 808nm / 940nm / 980nm operation

• Pulsed arrays from 3 to 5.6kW• Variety of package options• 808nm operation• Other wavelengths available

The following arrays are the standard Laser 2000 range of laser diode arrays. Each array is provided with the sub modules alreadymounted and soldered to the main block.Connection points are provided for current input and mounting holes are provided to attach the mounts to a heat exchanger.

CW laser diode arrays

Pulsed laser diode arrays

ARR29C020W2 package

Z Package

ARR04P3900ARR04P2500Z Package

ARR03P300ARR03P1900Y Package

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Fibre coupled laser diode arrays CW lensed laser diode arrays

Near IR Fibre Coupled Arrays

FCA Series

• Output from a fibre bundle• 15W CW output power

The FCA laser uses laser diode bars that are free-space coupled into a 0.22 NA, 1.2mm diameter fibrebundle. The unit delivers 15W continuous outputpower at 808nm from a small and compact package.The fibre output is connectorised with an SMAconnector as standard and may be collimated (with a separate optic) to act as a free-space source for materials processing or as a pump source. Although the unit is provided with CW outputat 808nm, customisation for use at other wavelengthsor in a pulsed output configuration is available. The FCA package is provided with a base-platecomplete with through-holes for mounting. The fibrelength is nominally 300mm although alternative lengthsmay be provided upon request. Connection pointsare provided for current input.

4XØ 3.28THRU

38.1

~1000

Fibre Bundle SMAconnector on end

(-)Hypertronic

Socket (+)Hypertronic

Pin51

.6

3.8

31.7

5

41.434.93

Dimensions in mm

Specification FCA02C015 FCA03C060 LAR29C017 LAR23C045 LAR03C350Package style Fibre Package Fibre Package W2 E2 YOutput Interface Fibre Bundle Fibre Bundle Lensed Lensed LensedTemporal Mode CW CW CW CW CWCW Power Output W 15 60 17 45 350Operating Current A 28 28 28 28 28Threshold Current A 7.5 7.5 7.5 7.5 7.5Slope Efficiency A/W 1.1 5.5 1.1 3.3 27.5Efficiency % 42 42 42 42 40Number of Emitters - - 46 46 x 3 46 x 25Emitter Size µm - - 80 x 1 80 x 1 80 x 1Emitter Pitch µm - - 200 200 200Centre Wavelength nm 808 808 808 808 808Wavelength Tolerance nm ±3 ±3 ±3 ±3 ±3Spectral Width nm 1.9 2 1.9 3.1 4.0Wavelength Shift nm/°C 0.25 0.25 0.25 0.25 0.25Numerical Aperture 0.22 0.12 - -- -Output Bundle Diameter mm 1.2 2.3 - -- -Beam Divergence FWHM ° x ° - -- 1x10 3 x 10 3 x 10Polarisation - -- TE TE TECW Degradation Rate %/kHr 3 3 3 3 3Built-in Voltage V 1.6 8 1.6 4.8 40Series Resistance Ohms 0.011 0.025 0.005 0.015 0.125Operating Voltage V 1.9 9 1.8 5.4 45Absolute Max RatingsForward Current A 35 35 35 35 35Reverse Current µA 25 25 25 25 25Reverse Voltage V 3 3 3 3 3Operating Temperature °C -20 to 50 -20 to 50 -20 to 50 -20 to 50 -20 to 50Storage Temperature °C -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85

Near IR Lensed ArraysLAR Series

• Up to 350W CW Output Power• Lower Beam Divergence

The LAR series of laser diode arrays incorporatecylindrical lenses onto the front face of the emitter.These lenses reduce the divergence in the fast axisof the beam from 40° to 10° so that the overall divergence of the beam corresponds to 10° x 10°.This allows them to be used with standard symmetricalspherical optics for high degrees of collimation andsignificantly lower astigmatism when compared tonon-lensed arrays. This enables the power from thebeam to be concentrated into smaller areas andhigher power densities. 3 models are offered asstandard delivering powers at 15, 45, and 350W CW.Each power output is provided in one of threepackages designed to provide the most effective heatremoval. Although the bars specified here are for useat 808nm, other wavelengths are available from785nm, 940nm and 980nm.

FCA Series Fibre Package

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Laser Diodes


Pump Engines

Relay Image of Rod Fluorescence

6.35mm, 0.6% Dopant Nd:YAG Rod~5.9mm vert. x ~ 5.9mm horiz.

MicroRod: Typical relayimage of the Nd:YAG

rod fluorescence.

Pump diode arrays

Nd:YAG rod

Laser beam

Housing

Pump diode arrays (each made up of three individual diode bars)radially pump the Nd:YAG crystalrod from 3 sides.

Drive Current (A)

CW O

utpu

t Pow

er (W

)

RB, RD CW Multimode Power OutputMicroRod RB-23MicroRod RB-33MiniRod RD-46MiniRod RD-66

2mm Rod3mm Rod4mm Rod6mm Rod

Multimode output from the standard 170mmflat HR/flat 90% OC cavity configuration.

RB SeriesCW Laser Pump Engines

RB / RD / RE / RG Series

• 35 to 750W pump power• Reliable & efficient • Compact design & easy to use

The RB, RD, RE and RG modules are a range ofdiode pumped Nd:YAG laser engines that may beincorporated into existing laser cavities for use eitheras an oscillator or amplifier.

They comprise Nd:YAG rod and pump diode arrays pre-aligned in a rugged and robust mechanicalhousing complete with coolant and electrical connection points.

All systems are designed for use as the engine in newlaser system development and production. They canequally well be used to replace the flashlamps in lamp-pumped systems.

The standard systems use 808nm 20Watt diode barsarranged to pump a Nd doped YAG rod with typically0.6 - 1% doping level. Other pump diode wavelengthsmay be supplied as can other gain materials. Shouldyou require an alternative, please contact Laser 2000.

The RE-Series Laser Module delivers the reliabilityand performance of diode-pumping to high powerindustrial and scientific laser systems, virtually eliminating the downtime experienced by older lamp-based laser technologies. The module is capable of driving your laser system to greater than 450 watts of CW power @ 1064nm.

The RG-Series Laser Module is capable of driving a laser system to greater than 750 watts of CW power @ 1064nm.

RB-23: MicroRod Laser Module RD-46: MiniRod Laser Module

a

b

c

6659

44

2466

Dimensions in mm

RD, RE, RG

RB Series

Laser beam

Housing

Like the RB, the RD, RE and RGare powered by a radial arrangementof diode arrays. This design trapsthe bulk of the diode light in theflow tube, providing optimum808nm absorption in to the YAGvolume .Standard units have 1%Nd doped YAG crystals providingan output beam of 1064nm. TheYAG is AR coated on the end facesand the flow tube reflective coatedto maintain uniform pumping of theYAG material.

Nd:YAG rod

Pump diodearrays

RD, RE, RG Series

150

100

50

010 15 20 25

RE, RG Series CW Output Power

Cavity Length Rod Curvature

900.00

800.00

700.00

600.00

500.00

400.00

300.00

200.00

100.00

0.00

CW

Out

put

Pow

er (

Wat

ts)

10 12 14 16 18 20 22 24 26 28 30

Drive Current (Amps)

6.35mm Diameter,0.6% Dopant,1MCC Faces

Product Rod Diameter Output Power Diode Bias Max drive Typical DriveCode (mm) (W) Voltage (VDC) Current (A) Current (A)RB-23 2 35 18 32 25RB-33 3 50 18 32 25RD-46 4 130 60 32 25RD-56 5 140 60 32 25RD-66 6 150 60 32 25RE50-1C2 5 200 80 38 27RE63-1C2 6.35 200 80 38 27RE70-1C2 7 200 80 38 27RE63-2C2 6.35 450 160 38 27RE70-2C2 7 450 160 38 27RG-63 6.35 750 310 38 25RG-70 7 750 310 38 25RG-80 8 750 310 38 25

Dimension (mm)a b c

RD 140 62 55RE 165 75 65RG 265 90 65

RG

RE

280mm, 0.25m280mm, 0.50m350mm, 0.30m530mm, 0.60m530mm, 0.50m

530mm, 0.25m590mm, 0.50m725mm, 0.30m725mm, 0.25m

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Laser Diodes FP Laser Diodes, VIS & NIR


Visible and Near Infrared Fabry - Perot Laser Diodes, Fibre Pigtailed

PL Series

Applications:• Optical sensing• Test and measurement equipment• Medical apparatus• Imaging and scanning systems

Laser 2000 offers a variety of packaging options for its visible series of laserdiodes. These units are available in ready-to-use, fibre-coupled packages, includingFC, ST, and SC receptacles, as well as fibre-pigtailed units.

The laser diodes offered by Laser 2000 are of proven design and manufacture. The standard wavelengths are centred at 630nm, 650nm and 670nm. Fibre-coupledCW (continuous-wave) output powers range from 0.1 - 10 mW, depending on thefibre type and desired performance level. Devices may be optimised for coupling tosensor or telecommunication size optical fibre, from 3µm to 200µm core.

Optional board - or panel - mount flanges are available for pigtailed devices. Also, Laser 2000 will arrange to package non-standard lasers or parts specified by a customer using standard or custom receptacle or pigtailing techniques. Both receptacle and pigtail packages are made using an active micro-positioning system and proven packaging techniques. Reliable and efficient devices are produced. In many cases several different pin-out options are available for similar wavelength lasers.

LD1084 Optical Output Power vs. Forward Current*

Forward Current IF (mA)Typi

cal O

ptic

al O

utpu

t P

ower

, P

o(m

W)

0 20 40 60 80 100

Tc=-10°C50°C

25°C

5

4

3

2

1

0

LD1084 Threshold Current vs. Case Temperature*

Case Temperature, Tc (°C)-10 0 10 20 30 40 50

100

10

Typi

cal T

hres

hold

Cur

rent

, Ith

(m

A)

LD1084 Slope Efficiency vs. Case Temperature*

Case Temperature, Tc (°C)-10 0 10 20 30 40 50

1.0

0.8

0.6

0.4

0.2

0

Typi

cal S

lope

Effi

cien

cy,

ηs (

mW

/mA

)

* Sample specifications for LD1084. Individual diode data is available on request

PL63 / 65 / 67 Series

Performance SpecificationsMin. Fibre Threshold Operating Monitor PD

Part No.1 Wavelength (nm) Coupled Pin-out TO Dia Current (mA) Current (mA) Current (mA)Min. Typ. Max. Power (mW) (mm) Typ. Max. Typ. Max. Min. Typ.

Continuous Wavelength Lasers @ 25°VISIBLEPL63C0016OOA-0-0-01 625 635 640 1mW into 3 / 125 SMF LDC-PDA 9.0 50 75 70 95 0.05 0.17PL63H0.8FC11-T-0 625 635 640 0.8mW into 9 / 125 SMF LDC-PDA 9.0 45 70 55 85 0.2 0.4PL65T0.4UN11-T-0 640 650 660 0.4mW into 9 / 125 SMF LDC-PDA 5.6 30 55 35 60 0.07 0.25PL65T0012FCA-0-0-01 640 650 660 1mW into 50 / 125 MMF LDC-PDA 9.0 30 55 35 60 0.07 0.25PL66M0026FCA-0-0-01 645 658 666 2.0mW into 3 / 125 SMF LDA-PDC 5.6 45 70 85 120 0.05 0.3PL67T0016STA-0-0-01 660 670 680 1.0mW into 3 / 125 SMF LDC-PDA 9.0 45 65 70 90 0.5 1.5PL66M005FC11-T-0 645 658 666 5mW into 9 / 125 SMF LDA-PDC 5.6 45 70 85 120 0.05 0.3NEAR IRPL78B0037OOA-0-0-01 770 785 800 3mW into 5 / 125 SMF LDA-PDC 5.6 55 80 140 165 0.2 0.4PL78H0102FCA -0-0-01 775 785 795 10mW Into 50 / 125 MMF LDC-PDA 9.0 35 70 20 35 0.025 0.15PL78M001FC11-T-0 770 780 800 1mW into 9 / 125 SMF LDA-PDC 9.0 25 40 40 70 0.45 0.9PL78R0012STA -0-0-01 770 785 795 1mW ST Receptacle LDC-PDA 5.6 25 45 45 65 0.3 0.55PL78D0.5SC7A -0-0-01 770 785 810 0.5mW into 5 / 125 SMF LDC_PDC 5.6 35 60 45 70 0.1 0.2PL83H0037OOA-0-0-01 820 830 840 3mW into 5 / 125 SMF LDA-PDC 5.6 40 70 80 120 0.04 0.13PL98A0038FAA-0-0-01 965 980 995 3mW into 6 / 125 SMF LDC-PDA 5.6 5 11 80 100 0.2 0.41 Examples only; most device/packaging combinations available. Changes to specifications may be made without notice.



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Laser Diodes 1310nm & 1550nm FP & DFB Laser Diodes


1310nm and 1550nm Laser Diodes - PigtailedFP: C-13-001-R-SFCL/M/H / C-13-001-P-SFCL/M/H

C-15-001-R-SFCL/M/H / C-15-001-P-SFCL/M/H

• Laser diode with MQW structure• Uncooled operation at -40 to +85°C• Built-in InGaAs monitor photodiode• Hermetically sealed active component

DFB: C-13-DFB2.5-R-SFCL/M/H / C-13-DFB2.5-P-SFCL/M/HC-15-DFB2.5-R-SFCL/M/H / C-15-DFB2.5-P-SFCL/M/H

• Uncooled DFB laser diode with MQW structure• High temperature operation without active cooling• Complies with Bellcore TA-NWT-000983• Single frequency operation with high SMSR

These devices utilise the laser diodes detailed on pages 3 & 9 to deliverunequalled high temperature performance and high modulation bandwidthin either a singlemode fibre pigtailed package or in singlemode receptacle connector package. Whilst designed for fibre optic networks, these devices are highly suitable for use in optical sensing, test and measurement equipment,medical apparatus and imaging systems.

Whereas the DFB lasers are suitable for 2.5Gb/sec operation.

These lasers are provided in either a singlemode pigtailed coaxial package or asinglemode connector receptacle package. Both of these package types can beprovided with a wide range of industry standard singlemode connectors, some ofwhich are detailed here.

Each laser is available in one of three different power output options. Other poweroutputs are available on request.

The pin assignment of the laser diode chip and photodiode chip may be customisedto suit case-positive or case-ground applications.

C-13 / C-15 Series

All optical data refer to a coupled 9/125µm SM fibre. * 0.1 nsec option available

All optical data refer to a coupled 9/125µm SM fibre * 0.15nsec option available, suitable for use @ 2.5Gb/sec

Absolute Maximum Ratings (Tc=25°C)C-13-001-R-SFCL/M/H C-13-DFB-R-SFCL/M/H

Parameter Symbol C-13-001-P-SFCL/M/H C-13-DFB-P-SFCL/M/HC-15-001-R-SFCL/M/H C-15-DFB-R-SFCL/M/HC-15-001-P-SFCL/M/H C-15-DFB-P-SFCL/M/H

Fibre Output Power

Receptacle / PigtailedmW Pf 0.4(L)/0.8(M)/1.5(H) 0.4(L)/0.9(M)/1.6(H)

LD Reverse Voltage V VRLD 2 2

PD Reverse Voltage V VRPD 10 10

PD Forward Current mA IFPD 1.0 2.0

Operating Temperature °C Topr -40 - +85 0~+70

Storage Temperature °C Tstg -40 - +85 -40~+85

Optical and Electrical Characteristics(Tc=25°C)Parameter Symbol Min. Typ. Max Test conditionThreshold Current mA Ith 12 20 CW

Fibre Output Power

L 0.3 - -

M Pf 0.5 CW,Ith+20mA, kink free

H 1

Peak Wavelength

C-13-001-R-SFCL/M/H nm λp 1290 1310 1330 CW, Pf=Pf(min.)

C-13-001-P-SFCL/M/H

C-15-001-R-SFCL/M/H 1520 1550 1580

C-15-001-P-SFCL/M/H

Spectral Width nm ∆λ - 2 5 CW, Pf=Pf(min.)

Forward Voltage V VF - 1.2 1.6 CW, Pf=Pf(min.)

Rise / Fall Time* ns tr / tf - - 0.5 Ibias=Ith ,10~90 %

Tracking Error dB ∆Pf/Pf ±1.0 APC,-40 - +85°C

PD Monitor Current µA Im 100 - - CW, Pf=Pf(min.), VRPD=2V

PD Dark Current µA IDARK - - 0.1 VRPD=5V

PD Capacitance pF Ct - 6 15 VRPD=5V, f=1MHz

Optical and Electrical Characteristics(Tc=25°C)Parameter Symbol Min. Typ. Max Test conditionThreshold Current mA Ith - 10 15 CW

Fibre Output Power

L 0.2 - 0.5

M Pf 0.5 - 1 CW,Ith+25mA, kink free

H 1 - 2

Peak Wavelength

C-13-DFB2.5-R-SFC nm λ 1295 1310 1325

C-13-DFB2.5-P-SFC

C-15-DFB2.5-R-SFC 1535 1550 1565

C-15-DFB2.5-P-SFC

Sidemode Suppression dB Sr 30 35 - CW, Pf=Pf(min.), 0-70°C

Forward Voltage V VF - 1.2 1.5 CW, Pf=Pf(min.)

Rise / Fall Time* ns tr / tf - - 0.5* Ibias=Ith ,10~90 %

Tracking Error dB ∆Pf / Pf - - ±1.0 APC,0 - 70°C

PD Monitor Current µA Im 100 - - CW, Pf=Pf(min.), VRPD=2V

PD Dark Current µA IDARK - - 0.1 VRPD=5V

PD Capacitance pF Ct - 6 15 VRPD=5V, f=1MHz

Laser Diode Wavelength Output Power Connector(nm) (mW)

Fabry - PerotC-13-001-P-SFCL 1310 0.3 Pigtailed FC/PCC-13-001-R-SFCL 1310 0.3 Receptacle FC/PCC-13-001-P-SFCM 1310 0.5 Pigtailed FC/PCC-13-001-R-SFCM 1310 0.5 Receptacle FC/PCC-13-001-P-SFCH 1310 1 Pigtailed FC/PCC-13-001-R-SFCH 1310 1 Receptacle FC/PCC-15-001-P-SFCL 1550 0.3 Pigtailed FC/PCC-15-001-R-SFCL 1550 0.3 Receptacle FC/PCC-15-001-P-SFCM 1550 0.5 Pigtailed FC/PCC-15-001-R-SFCM 1550 0.5 Receptacle FC/PCC-15-001-P-SFCH 1550 1 Pigtailed FC/PCC-15-001-R-SFCH 1550 1 Receptacle FC/PC

Laser Diode Wavelength Output Power Connector(nm) (mW)

DFBC-13-DFB2.5-P-SFCL 1310 0.3 Pigtailed FC/PCC-13-DFB2.5-R-SFCL 1310 0.3 Receptacle FC/PCC-13-DFB2.5-P-SFCM 1310 0.5 Pigtailed FC/PCC-13-DFB2.5-R-SFCM 1310 0.5 Receptacle FC/PCC-13-DFB2.5-P-SFCH 1310 1 Pigtailed FC/PCC-13-DFB2.5-R-SFCH 1310 1 Receptacle FC/PCC-15-DFB2.5-P-SFCL 1550 0.3 Pigtailed FC/PCC-15-DFB2.5-R-SFCL 1550 0.3 Receptacle FC/PCC-15-DFB2.5-P-SFCM 1550 0.5 Pigtailed FC/PCC-15-DFB2.5-R-SFCM 1550 0.5 Receptacle FC/PCC-15-DFB2.5-P-SFCH 1550 1 Pigtailed FC/PCC-15-DFB2.5-R-SFCH 1550 1 Receptacle FC/PC

- - - - -Ordering CodesC

13 = 1310 001 = Fabry-Perot R = Receptacle FC = FC/PC L = Low PowerConnector

15 = 1550 DFB2.5 = DFB P = Pigtailed SC = SC/PC M = Medium PowerConnector

H = High Power

S

Fabry - Perot

DFB



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Laser Diodes 1270nm - 1610nm DFB Laser Diodes


1600 - 1650nm Laser Diodes

PL16 Series

Features:• Tracking Error 0.5dB• Compact, reliable receptacle& coax fibre-coupled package

• 0.1 to 1.5mW singlemode (9 / 125)

Applications:• Fibre optic

communications systems• Fibre optic test

instrumentation

Laser 2000 offers a variety of packagingoptions for its 1615 nm laser diodes.These units are available in ready-to-use, fibre-coupled packages, including FC, ST, SC and other receptacles, aswell as fibre- pigtailed units.

The InGaAsP laser diodes offered byLaser 2000 are of proven design andmanufacture; the standard wavelength is1615 nm. Fibre-coupled CW (continuous -wavelength) output powers range from0.1 - 2mW, depending on the fibre type(singlemode or multimode) used.Tracking error over OTR -40 to +85C is 1.0 dB maximum; typical 0.5dB.Optional board - or panel - mountflanges are available for pigtaileddevices. Also, Laser 2000 will arrangeto package non-standard lasers orparts specified by a customer usingstandard or custom receptacle or pig-tailing techniques. Lasers in 5.6 or 9.0mm TO cans can be packaged. Bothreceptacle and pigtail packages aremade using an active micro-positioningsystem and proven packaging techniques. Reliable and efficientdevices are produced.

All optical data refer to a coupled 9/125µm SM fibre * xxxx=1470, 1490, 1510, 1530, 1550, 1570, 1590, 1610nm

1270nm - 1610nm Laser Diodes (CWDM), Pigtailed

C-xxxx-DFB-RA-SFCL/M/H/2 / C-xxxx-DFB-PA-SFCL/M/H/2

• Uncooled DFB laser diode with MQW structure• High temperature operation without active cooling• Hermetically sealed active component• Complies with Bellcore TA-NWT-000983• Single frequency operation with high SMSRLaser 2000 also offers a range of DFB lasers in the 1470-1610nmwindow. These devices, like those detailed on the previous pages,are derived from the same uncooled diodes with a MQW structureand packaging technology yielding high power output for low thresholdswith excellent efficiencies over a broad operating temperature range.They are provided as standard in coaxial pigtailed singlemodepackages, or in receptacle connector package formats. However, it is possible to provide these devices in plane window TO cans,lensed window TO cans and the 14pin packages detailed elsewhere in this section.

The devices include rear facet monitor photodiodes allowingoperation in constant current or constant power mode.

The devices themselves are designed for communication applicationsutilising coarse wavelength division multiplexing techniques and forsensing and vision applications requiring specific wavelengths withinthis wavelength band. They are hermetically sealed, laser welded forexceptional performance over extended periods meeting the fullrequirements of the demanding telcordia specification.

These devices may be provided with a built-in optical isolator as an option.

As standard they are suitable for modulation applications up to1GHz with a combined rise and fall time of 1nsec. As an option,Laser 2000 is able to supply these devices as standard for 2.5GHzapplications. Contact Laser 2000 for details.

Optical and Electrical Characteristics(Tc=25°C)Parameter Symbol Min. Typ. Max Test conditionThreshold Current mA Ith - 10 15 CWFibre Output Power

L 0.2 - 0.5M Pf 0.5 - 1 CW,Ith+30mA, kink freeH 1 - 22 2 - 3

Peak Wavelength nm λp xxxx-2 xxxx* xxxx+2Linewidth nm ∆λ 0.1 0.2Sidemode Suppression dB Sr 30 35 - CW, Pf=Pf(min.), 0-70°CForward Voltage V VF - 1.2 1.5 CW, Pf=Pf(min.)Rise / Fall Time ns tr / tf - - 0.5 Ibias=Ith ,10~90 %Tracking Error dB ∆Pf/Pf - - ±1.0 APC,0 - 70°CPD Monitor Current µA Im 100 - - CW, Pf=Pf(min.), VRPD=2VPD Dark Current µA IDARK - - 0.1 VRPD=5VPD Capacitance pF Ct - 6 15 VRPD=5V, f=1MHz

C-DFB Series

Min. Fibre Threshold Operating Monitor PDPart No.1 Power (mW) Wavelength (nm) Coupled Power Current (mA) Current (mA) Current (mA)

Min. Typ. Min. Typ. Max. (mW) Typ. Max. Typ. Max. Min. Typ.Continuous Wavelength InGaAsP 1615 nm Lasers @ 25CPL16M001100A-0-0-01 5 10 1600 1615 1650 1mW coupled 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.8PL16M001FC11-S-0 5 10 1600 1615 1650 1mW into 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.8PL16M002200A-0-0-01 5 10 1600 1615 1650 2mW coupled 50 / 125 MMF 15 30 30 45 InGaAs 0.1 0.8PL16M001SC21-S-01 5 10 1600 1615 1650 1mW into 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.8PL16M0.51FAA-0-0-01 5 10 1600 1615 1650 0.5mW into 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.8PL16M0.5FC21-S-0 5 10 1600 1615 1650 0.5mW coupled 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.8PL16M0.5FC11-S-0 5 10 1600 1615 1650 0.5mW into 9 / 125 SMF 15 30 30 45 InGaAs 0.1 0.81 Examples only; most device/packaging combinations available. Changes to specifications may be made without notice. 01-10PL16MRev.1

CentrePart Number ID** Wavelength (nm)C-1270A-DFB-P/R-SFC 1270C-1290A-DFB-P/R-SFC 1290C-1310A-DFB-P/R-SFC 1310C-1330A-DFB-P/R-SFC 1330C-1350A-DFB-P/R-SFC 1350C-1370A-DFB-P/R-SFC 1370C-1390A-DFB-P/R-SFC 1390C-1410A-DFB-P/R-SFC 1410C-1430A-DFB-P/R-SFC 1430C-1450A-DFB-P/R-SFC 1450C-1470A-DFB-P/R-SFC 1470C-1490A-DFB-P/R-SFC 1490C-1510A-DFB-P/R-SFC 1510C-1530A-DFB-P/R-SFC 1530C-1550A-DFB-P/R-SFC 1550C-1570A-DFB-P/R-SFC 1570C-1590A-DFB-P/R-SFC 1590C-1610A-DFB-P/R-SFC 1610** Choose power & connector option, P = Pigtailed FC/PC; R = Receptacle FC/PC



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Laser Diodes Package Dimensions


Laser Diode Package Dimensions

Ø 9.0+0- 0.025

0.4+0.1-0

Ø 7.2+0.3- 0.2

0.65

(90°)

1.0±0.1

Ø 6.2±0.2

(Ø 2.0)0.3

Gla

ss

Emitting Point

2.45

3.5±

0.2

3 - Ø 0.45±0.1 9±1

1.5±0.1321

3

2

1

Ø2.54±0.35

9mm TO PackageLDxxx Series

5.6mm TO PackageLDxxx Series

C-13-001-E-B / C-15-001-E-BC-13-DFB-E-B-NT / C-15-DFB-E-B-NT

(Some dimensions subject to confirmation)

(0.4)

1.0±0.1

(90°)

Ø 1.6±0.2

2.3±0.2Ø 4.1±0.3

Ø 3.55±0.1

0.25

Gla

ss

EmittingPoint

1.27

1.2±0.1

6.5±

1.0

3 -Ø 0.45±0.1

321

3

2

1

Ø2.0±0.2

Ø 5.6+0- 0.025

0.4+0.1-0

Dimensions in mm

Visible and Near IR FP Laser Diodes and 1310nm & 1550nm Laser Diodes- see Pages 2, 3 & 9

FC receptacle package with 2-hole flange

FC ReceptacleC-13-001-R-SFC

C-15-001-R-SFC

PL Series

C-13-DFB-RA-SFC

C-15-DFB-RA-SFC

C-xxxx-DFB-RA-SFC

2-Ø2.3

1

2 3

4

9.2

13.4

Ø19 Ø8

14

7.52

3.5

15

M8 x 0.75

2.15

2

12.7

7.6

12

43

14±1

3

6

2-Ø2.3

20

30

FC Connector

Ø6.3

PC(SR=20)

Ø2.8 Ø0.9

1000+200+0

4-Ø0.450.5

Uncooled fibre pigtailed with optional FC connector

1310nm & 1550nm Laser Diodes and 1470nm - 1610nm Laser Diodes- see Pages 18, 19 & 20

C-13-001-P-SFC, C-15-001-P-SFC, PL Series, C-13-DFB-PA-SFCX,

C-15-DFB-PA-SFCX, C-xxxx-DFB-PA-SFC

Dimensions in mm

90° 90°

Focal Point

Top View

1±0.1

0.4±0.10.4

Basic Plane

Focal Plane

4 - Ø 0.45±0.04

6.2±0.5

Ø5.6+0-0.025

Ø4.2

Ø3.55±0.05

1.2±0.07

14±1

4.1

4.77

Bottom View

1

23

4 Ø2.

0

TO-18 with a ball lens cap C-13-001-E-B / C-15-001-E-B

C-13-DFB-E-B-NT / C-15-DFB-E-B-NT

Top View

Bottom View

Top View

Bottom View

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Laser Diodes SM 1550nm <50mW For Digital Applications


Optical and Electrical Characteristics (TLD=25°C, TC=25°C)Item Symbol Test condition Min. Typ. Max. UnitForward Voltage VF Pf = 40mW - - 2.5 VThreshold Current Ith - 20 35 mAOptical Output Power Pf IF = 250mA 40 - - mWPolarization Extinction Ratio XP Pf = 40mW 20 - - dBPeak Wavelength *1 λP Pf = 40mW - AB5A636P1: 1530 - 1565 nm

- AB6A636P1: 1565 - 1620 nmWavelength Accuracy ∆λP Pf = 40mW -0.5 - +0.5 nmSide Mode Suppression Ratio SMSR Pf = 40mW 33 40 - dBSpectral Linewidth ∆f Pf = 40mW - 3 15 MHzTracking Error ∆Pf Pf = 40mW, Im = const, TC = -20~70°C -0.5 - 0.5 dBMonitor Current Im Pf = 40mW, VRD = 5V 50 - 2000 µAPD Dark Current Id VRD = 5V - - 0.1 µACooler Voltage VC Pf = 40mW, TC = 70°C - - 2.0 VCooler Current IC Pf = 40mW, TC = 70°C - - 1.5 AThermistor Resistance Rth TLD = 25°C, B = 3900 ±100K 9.5 10 10.5 KΩ*1 Peak Wavelength: 1530.3 - 1619.6nm 50GHz steps. All wavelengths are referenced to a vacuum. For wavelength outside this range, please contact Laser 2000.(Note) Polarization state of DFB-LD is aligned parallel to the slow axis. This product complies with Class 3A laser products. Specifications are subject to change without notice.

C & L-Band DFB Laser Diode Module

AB5A636P1 / AB6A636P1

• Wavelength selectionAB5A636P1: 1530-1565nmAB6A636P1: 1565-1620nm

• Single longitudinal mode• Accurate peak wavelength (±0.5nm)• Built-in optical isolator (30dB)• Built-in monitor photo diode• FC/SPC connector• PMF pigtail type

AB5A636P1 and AB6A636P1 are nGaAsP/InP distributed feedback (DFB) laserdiodes developed as a light source for wavelength division multiplexing (WDM)optical communication.They are intended for use with an external modulator.

Absolute Maximum Ratings (TLD = 25°C)Item Symbol Rating UnitLD Forward Current IF 300 mALD Reverse Voltage VR 2 VPD Forward Current IFD 10 mAPD Reverse Voltage VRD 20 VOperating Case Temperature TC -20~+70 °CStorage Temperature Tstg -40~+85 °CCooler Current IC 2.0 A

DescriptionPIN 1 ThermistorPIN 2 ThermistorPIN 3 LD cathodePIN 4 PD anodePIN 5 PD cathodePIN 6 Cooler anodePIN 7 Cooler cathode

DescriptionPIN 8 CasePIN 9 CasePIN 10 NCPIN 11 LD anodePIN 12 NCPIN 13 LD anodePIN 14 NC

(Dimensions in mm)

7 1

8 14

TECPD

LDThermistor

30

26

#1

Ø0.9Ø5.7

4 - Ø2.7

#7

#14

15.24 Key

PolarisationState

2.54

0.46

8.0

12.7

(15.

2)

34+0.5-0

#8

20.8 20 (1000)

4.6

5.17.8

0.5

0.2

FC-SPC Connector

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Laser Diodes SM 1550nm <50mW For Digital Applications


Tunable & wavelength locked versions also available!

LD 20Ω

10kΩ200n

HPD

TEC TS

7 6 5 4 3 2 1

8 9 10 11 12 13 14

17.781.5

23025

5.95

14x(0.5x0.2±0.06)6x2.54 = 15.24

1.55

8

12.7

7mln

l1.

25

Optical characteristics

DescriptionPIN 1: ThermistorPIN 2: ThermistorPIN 3: Laser DC bias (-)PIN 4: Photodiode Anode (-)PIN 5: Photodiode Cathode (+)PIN 6: TEC (+)PIN 7: TEC (-)PIN 8: Case GroundPIN 9: Case GroundPIN 10: Not ConnectedPIN 11: RF Common (+)PIN 12: Laser RF Input (+)PIN 13: RF Common (+)PIN 14: Not Connected

1.78

1.65.6

9.8

20.8 Rigid 31.5 ± 0.5

Ø5.

3m

ax.

Ø5.6

0.05

1550nm, SM Pigtailed, 14 Pin Butterfly, DFBA 1905 LMI

• Up to 30 mW output power• 50 GHz spaced wavelength selection according to ITU-T G.692 • Optimised for use with LiNbO3 external modulator• Polarisation maintaining fibre pigtail

This laser module contains an Alcatel SLMQW DFB laser and is designed for use with externalmodulation optimised for high power Wavelength Division Multiplexed (WDM) systems. The moduleincorporates a polarisation maintaining fibre pigtail thermoelectric cooler, precision thermistor, andoptical isolator for stable operation under all conditions.

Dimensions in mm

A 1915 LMI

Butterfly Package - A 1915 LMI / A 1905 LMI

1905 LMIParameter Condition Symb Min Typical MaxThreshold Current mA Ith 40Output Power mW Twave = 20 to 35°C Pf 10

2030

Forward Voltage V Pf, pin 3 & 11 Vf 2.5Laser Forward Current mA 10mW, pin 3 & 11 lf 80 120

20mW, pin 3 & 11 125 19025mW, pin 3 & 11 150 23030mW, pin 3 & 11 180 260

Emission Wavelength λm∆(Emitted-Target) Wavelength [2] ∆λe -0.1 +0.1Laser chip temperature range for tunability °C [2] Tλ 20 35Spectral Width MHz CW, Pf, FWHM ∆λ 2 5Side-mode suppression ratio dB Pf SMSR 35Dispersion Penalty dBTracking Error %

Adiabatic Chirp MHz / mA

Relative Intensity Noise dB / Hz 100MHz to 3GHz at Pf RIN -140

Photodiode Dark Current nA V = -5V ld 100Wavelength Drift vsTcase pm / °C ∆λ/∆Tc 0.2 0.5Thermistor Resistance kΩ RTH 9.7 10.3Thermistor Temperature Coefficient % / K Rt -3 -5TEC Current A [1] lt 0.85 1.3TEC Voltage V [1] Vt 1.6 2.5TE/TM extinction ratio of pigtail dB Er 20

30mW in SM or PM Fibre!30mW in SM or PM Fibre!

Product Code Output PowerA1905LMI10 10mWA1905LMI20 20mWA1905LMI30 30mW

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Laser Diodes SM 1310 & 1550nm <50mW For Analogue Applications


FP-1310-C5-0.5-A-xx-A-x-x FP-1310-C5-1.8-A-xx-A-x-xElectrical/Optical CharacteristicsParameter Symbol Min Typ Max Test Conditions Min Typ Max Test ConditionsOperating Temperature °C T -20 - 85 -20 - 85Optical Output Power mW Po 0.5 - - CW 1.8 2.0 - CWThreshold Current mA Ith - 10 14 T = 25°C - 10 14 T = 25°C

- 25 35 T = 85°C - 25 35 T = 85°COperating Current mA Iop - 20 27 CW, Po=0.5mW, T=25 °C - 25 35 CW, Po=1.8mW, T=25 °C

- 40 60 CW, Po=0.5mW, T=85 °C - 35 60 CW, Po=1.8mW, T=85 °CForward Voltage VF - 1.1 1.6 Po=0.5 mW - 1.1 1.6 Po=1.8 mWCenter Wavelength nm λ 1275 1310 1345 Po=0.5 mW, CW 1275 1310 1345 Po=1.8 mW, CWRMS Spectral Width nm ∆λ - 1.6 2.5 Po=0.5 mW - 1.6 2.5 Po=1.8 mWWavelength temperature nm/°C ∆λ /∆Τ - 0.45 0.5 - 0.45 0.5

coefficientMonitor Current µA Imon 75 - 400 VR=5 V 75 - 400 VR=5 VMonitor Dark Current nA ID - - 200 VR=5 V - - 200 VR=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10 log -1 - 1 Imon=const, γ =10 log

(Pf/0.5) [dB] (Pf/1.8) [dB]Optical Isolation* dB ISO 30 35 - 30 35 -Parameters are over operating temperature range unless otherwise noted. * Optical Isolation is only applicable to devices that include the optical isolator option.

1310nm FP Lasers, 1GHz, Coax Package

FP-1310-C5-0.5-A-xx-A-x-xFP-1310-C5-1.8-A-xx-A-x-x

• Advanced Multiple Quantum Well (MQW) FP Laser Design

• Low Distortion- IMD2 typ. -45 dBc- IMD3 typ. -45 dBc

• Cost-effective Uncooled Laser Technology

• 5.6-mm TO-style package with SMF pigtail

Applications• CATV• Analog transmission

These Multi- Quantum Well (MQW) Fabry-Perotlasers have been designed specifically for analogue applications, especially CATV.

The devices feature high output power, wide operatingtemperature range, and low distortion characteristics.

Their uncooled, hermetically sealed, coaxial fibre -pigtailed packages are a cost-effective means of providing a highly linear light source for short-reachand intermediate-reach analog transmission applications.

F P - 1 3 1 0 - C 5 - 0 .5 - A x x - A - x - xF P - 1 3 1 0 - C 5 - 1 . 8 - A x x - A - x - x

Connector Pin Assignment IsolatorSC=SC/PC A= Pin Type A I=Single-stage IsolatorFC=FC/PC C= Pin Type C N=Not IsolatedSA=SC/APCFA=FC/APCNC=No Connector

Ordering Information

Pin AssignmentType A Type C

1. PD Cathode PD Anode2. PD Anode LD Anode,PD Cathode3. LD Anode, GRD GRD4. LD cathode LD cathode

Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)Safety InformationAll versions of this laser are Class 3R laser products per IEC*60825-1:2001. Users should observe safety precautions suchas those recommended by ANSI** Z136.1-2000, ANSI Z36.2-1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and 1040.11.Consequently, this laser module is only intended for use as acomponent by manufacturers of electronic products and equipment.

Wavelength = 1.3 µmMaximum Power = 75mWSinglemode Fibre PigtailFibre Numerical Aperture = 0.14

Labeling is not affixed to the laser module due to size constraints;rather, labeling is placed on the outside of the shipping box.

This product is not shipped with a power supply.

Caution: use of controls or adjustments or performance of procedures other than those specified herein may result in hazardous radiation exposure.

* IEC is a registered trademark of the International Electrotechnical Commission

** ANSI is a registered trademark of the American National Standards Institute

FP Lasers: Output Power vs Current

0 10 20 30 40 50 60

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Current (mA)

Pow

er (

mW

) 25C

85C

Intensity vs WavelengthFP Lasers: Voltage vs Current

0 10 20 30 40 50 60 70

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Current (mA)

Vol

tage

(V

)

1305 1310 1315 1320 1325

0

-10

-20

-30

-40

-50

-60

-70

-80

Current (mA)

Pow

er (

mW

)

Absolute Maximum RatingsExceeding the conditions specified below may result in permanent damage to the laser module. In normal operation, refer to the operating conditions in Table 1, below. Exceeding the conditions in Table 1, but below theabsolute maximum ratings may result in unacceptable performance in some applications. Exposure to conditionsabove the absolute maximum ratings may negatively impact the reliability of the devices.

Parameter Symbol Condition Min MaxOperating Case Temperature °C Tc I=Iop -20 85Storage Temperature °C Tstg - -40 100Laser Forward Current mA - - - 120Laser Reverse Bias V Vr - - 2Photodiode Reverse Bias V Vrpd - - 10

RF CharacteristicsParameter Symbol Test Conditions Min Typ MaxRelaxation Oscillation Frequency GHz fR Po = 0.5mW - 4.5 -Modulation Bandwidth GHz BW -3dB, Po = 0.5mW 1.0 - -Intermodulation Distortion 2 dBc IMD2 T = 25°C, Po = 0.5mW, - -45 -

OMI = 0.1, Two-tone test,13MHz and 19MHz, 7dB

plus connector lossIntermodulation Distortion 3 dBc IMD3 T = 25°C, Po = 0.5mW, - -45 -

OMI = 0.1, Two-tone test,13MHz and 19MHz, 7dBplus connector loss, all

peaks from 5MHz to 300MHzmeet this level

RF Bandpass Flatness dB BF Peak to valley, 5MHz to 300MHz - - 1.0

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1310nm DFB Lasers,2.2GHz, Coax Package

DFB-1310-C5-2-A4-xx-x-x

• Advanced Multiple Quantum Well(MQW) Distributed Feedback (DFB) Laser Design

• Low Distortion- IMD2 typ. –40 dBc- IMD3 typ. –58 dBc

• RIN < -145 dB/Hz• Cost-effective Uncooled

Laser Technology• SMSR typ. 40 dB• 5.6-mm TO-style package

with SMF pigtail

Applications• Wireless (W-CDMA, GSM, PCS)

fiber-optic repeaters• Analog transmission

The DFB-1310-C5-2-A4-xx-x-x series of Multi-Quantum Well (MQW) Distributed Feedback (DFB)lasers have been designed specifically for analogapplications, especially wireless repeater applications.

The devices feature high output power, wide operatingtemperature range, low distortion characteristics, lowRIN noise, and high side mode suppression.

Their uncooled, hermetically sealed, coaxial fiber-pig-tailed packages are a cost-effective means of provid-ing a highly linear light source for intermediate-reachand long-reach analog transmission applications.

Absolute Maximum RatingsParameter Symbol Condition Min MaxOperating Case Temperature °C Tc I=Iop -20 85Storage Temperature °C Tstg - -40 100Laser Forward Current mA If - - 120Laser Reverse Bias V Vr - - 2Photodiode Reverse Bias V Vrpd - - 10

Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T -20 - 85*Optical Output Power mW Po 2.0 - - CWThreshold Current mA Ith - 12 18 T=25 °C

- 35 50 T=85 °COperating Current mA Iop - 60 80 T=85 °CForward Voltage V VF - 1.1 1.6 Po=2.0 mWCenter Wavelength nm λc 1290 1310 1330 Po=2.0 mW, CWSpectral Width (-20 dB) nm ∆λ - 0.1 1.0 Po=2.0 mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.09 -Side-mode Suppression Ratio dB SMSR 30 40 - Po=2.0 mWMonitor Current µA/mW Imon 25 - 375 Vrpd=5 VMonitor Dark Current nA ID - - 200 Vrpd=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Po/2.0) [dB]Optical Isolation dB ISO 30 - -

Parameters are at 25 °C unless otherwise noted.* See Ordering Options for operating temperature ranges available.

RF CharacteristicsParameter Symbol Min Typ Max Test ConditionsRelative Intensity Noise dB/Hz RIN - - -145 CW,Po=2.0 mW, f=80

MHz to 2200 MHzSecond-Order Intermodulation dBc IMD2 - - -40 T=25 °C, Po=2.0 mW,

OMI=0.2, Two-tonetest, 936 MHz and 958 MHz

Third-Order Intermodulation dBc IMD3 - - -58 T=25 °C, Po=2.0 mW,OMI=0.2, Two-tone

test, 936 MHz and 958MHz, and also 1800 MHz

and 1801 MHzRF Bandpass Flatness dB BF - - 4.0 Peak to valley, 5 MHz

to 300 MHz



Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 3 1 0 - C 5 - 2 - A 4 - x x - x - x

Connector Temperature Pin Assignment

SC=SC/PC A=-20°C to 85°C A= Pin Type A

FC=FC/PC B=-20°C to 75° C= Pin Type C

SA=SC/APC

FA=FC/APC

NC=No Connector


Safety InformationAll versions of this laser are Class 3B laser products per IEC*60825-1:2001. Users should observe safety precautions suchas those recommended by ANSI** Z136.1-2000, ANSI Z36.2-1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and1040.11. Consequently, this laser module is only intended foruse as a component by manufacturers of electronic productsand equipment.

Wavelength =1.3 µmMaximum Power = 75mWSingle-mode fiber pigtailFiber Numerical Aperture = 0.14



Caution: use of controls or adjustments or performance ofprocedures other than those specified herein may result inhazardous radiation exposure.

* IEC is a registered trademark of the International Electrotechnical Commission.

** ANSI is a registered trademark of the American National Standards Institute.

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1310nm DFB Lasers,550MHz, Coax Package

DFB-1310-C5-4-A3-xx-x-x

• Advanced Multiple Quantum Well (MQW) Distributed Feedback (DFB) Laser Design

• Low Distortion- CSO -53 dBc- CTB -62 dBc



with SMF pigtail

Applications• CATV Forward-path• Analog transmission

The DFB-1310-C5-4-A3-xx-x-x series of Multi-Quantum Well (MQW) Distributed Feedback (DFB)lasers have been designed specifically analog appli-cations, especially CATV forward-path.

The devices feature high output power, wide operat-ing temperature range, low distortion characteristics,low RIN noise, and high side mode suppression.

Their uncooled, hermetically sealed, coaxial fibre- pig-tailed packages are a cost-effective means of provid-ing a highly linear light source for intermediate- reachand long-reach analog transmission applications.


Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T -20* - 85*Optical Output Power mW Po 4.0 - - CWThreshold Current mA Ith - 12 18 T=25 °C

- 35 50 T=85 °COperating Current mA Iop - 70 100 T=85 °CForward Voltage V VF - 1.1 1.6 Po=4.0 mWCenter Wavelength nm λc 1280 1310 1340 Po=4.0 mW, CWSpectral Width (-20 dB) nm ∆λ - 0.1 1.0 Po=4.0 mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.09 -Side-mode Suppression Ratio dB SMSR 30 40 - Po=4.0 mWMonitor Current µA/mW Imon 75 - 400 VR=5 VMonitor Dark Current nA ID - - 200 VR=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Pf/4.0) [dB]Optical Isolation dB ISO 30 35 -


RF CharacteristicsParameter Symbol Min Typ Max Test ConditionsRelative Intensity Noise dB/Hz RIN - - -145 CW,Po=4.0 mW,

f=50 MHz to 550 MHzRelaxation Oscillation Frequency GHz fR - 4.5 - Po=4.0mWModulation Bandwidth GHz BW 1.0 - - -3dB, Po=4.0mWComposite Second-Order dBc IMD2 - - -53 Note 1Composite Triple Beat dBc CTB - - -62 Note 1Carrier-to-Noise ratio dB CNR 50 - - Note 1RF Bandpass Flatness dB BF - - 1.0 Peak to valley,

50 MHz to 550 MHz

Note 1: Test condition: Po=4mW, OMI 3.2%, 77 unmodulated carriers (50 to 550 MHz), Received Power=-4dBm.



Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 3 1 0 - C 5 - 4 - A 3 - x x - x - x




SA=SC/APC

FA=FC/APC

NC=No Connector


Safety InformationAll versions of this laser are Class 3B laser products per IEC* 60825-1:2001.Users should observe safety precautions such as those recommended byANSI** Z136.1-2000, ANSI Z36.2-1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and 1040.11. Consequently,this laser module is only intended for use as a component by manufacturers ofelectronic products and equipment.

Wavelength =1.3 µmMaximum Power = 75mWSingle-mode fibre pigtailFibre Numerical Aperture = 0.14

Labeling is not affixed to the laser module due to size constraints; rather, labelingis placed on the outside of the shipping box.


Caution: use of controls or adjustments or performance of proceduresother than those specified herein may result in hazardous radiation exposure.

* IEC is a registered trademark of the International Electrotechnical Commission.** ANSI is a registered trademark of the American National Standards Institute.

4

3

2

1

00 10 20 30 40 50 60 70 80

Current (mA)

Pow

er (

mW

)

Output Power vs. Current

-20 C 25 C

70 C 85 C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 10 20 30 40 50 60 70 80 90

Current (mA)

Vol

tage

(V

)

Forward Voltage vs. Current-20 C

80 C

10

0

-10

-20

-30

-40

-50

-60

-701306 1307 1308 1309 1310 1311 1312

Wavelength (nm)

Rel

ativ

e In

tens

ity (

dB)

Output Spectrum

Tc=25°CCW

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1550nm DFB Lasers,1GHz, Coax Package

DFB-1550-C5-2-A2-xx-x-x


• Low Distortion- IMD3 typ. –60 dBc



with SMF pigtail

Applications• Wireless (CDMA) fibre-optic repeaters• Analog transmission



Their uncooled, hermetically sealed, coaxial fibre-pig-tailed packages are a cost-effective means of provid-ing a highly linear light source for intermediate-reachand long-reach analog transmission applications.


MHz to 1000 MHzThird-Order Intermodulation dBc IMD3 - - -60 T=25 °C, Po=2.0 mW,


RF Bandpass Flatness dB BF - - 1.0 Peak to valley, 50 MHzto 1000 MHz








Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 5 5 0 - C 5 - 2 - A 2 - x x - x - x




SA=SC/APC

FA=FC/APC

NC=No Connector










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1550nm DFB Lasers,2.2GHz, Coax Package

DFB-1550-C5-2-A4-xx-x-x


• Low Distortion- IMD2 typ. –40 dBc- IMD3 typ. –58 dBc



with SMF pigtail

Applications• Wireless (W-CDMA, GSM, PCS)

fibre-optic repeaters• Analog transmission



Their uncooled, hermetically sealed, coaxial fibre-pig-tailed packages are a cost-effective means of provid-ing a highly linear light source for intermediate-reachand long-reach analog transmission applications.




Third-Order Intermodulation dBc IMD3 - - -58 T=25 °C, Po=2.0 mW,OMI=0.2, Two-tone

test, 936 MHz and 958MHz, and also 1800 MHz

and 1801 MHzRF Bandpass Flatness dB BF - - 4.0 Peak to valley, 5 MHz

to 300 MHz








Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 5 5 0 - C 5 - 2 - A 4 - x x - x - x




SA=SC/APC

FA=FC/APC

NC=No Connector










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15XXnm DFB Lasers,2.2GHz, BFY Package

DFB-1xxx-BF-xx-A2-xx

• Standard OC-48 pin compatibility• Negative bias• Optimized for WCDMA• Output power up to 13 mW• Meets GR 468 reliability specifications

Applications• Wideband Wireless Repeaters• High frequency analog transmission

The DFB-1xxx-BF-xx-A2-xx DFB laser modules aredesigned for high-frequency analog applications. The modules are designed to incorporate high outputpower while maintaining high linearity. The devicesfeature standard pin assignments (compatible with OC-48).

The modules are excellent sources for use in widebandwireless systems with frequencies up to 2.2 GHz.

Absolute Maximum RatingsParameter Symbol Condition Min MaxOperating Case Temperature °C Tc I=Iop -20 65Storage Temperature °C Tstg - -40 85Laser Forward Current mA If - - 150Laser Reverse Bias V Vr - - 2Photodiode Reverse Bias V Vrpd - - 10TEC Current A Itec -20 °C < Tc <+65 °C, - 1.6

Top=25 °CIf=150 mA

Electrical and Optical CharacteristicsParameter Symbol Test Conditions Min Typ MaxCentre Wavelength nm λc Ir = Iop, CW 1460 - 1620Optical Output Power* mW Po CW, TL=25 °C 8 - 13Optical Isolation dB IS T=25 °C 30 - -Side-mode Suppression Ratio dB SMSR Ir = Iop 30 - -Threshold Current mA Ith TL=25 °C - 14 20Operating Current mA Iop Po= Pr - 90 120Forward Voltage V VF Ir = Iop - 1.2 1.9Monitor Current µA/mW Imon Vrpd=5V 10 - 150Monitor Dark Current nA ID Vrpd=5V - - 200Operating Case Temperature °C T -40 - 85Tracking Error dB γ Imon=const, γ=10 log (Po/Pr) [dB] -1 - 1Thermistor Resistance K Rt T=25 °C 9.5 - 10.5Thermistor B Constant K B T=25 °C - 3900 -TEC Current A IC ∆T=40 °C - - 1.5TEC Voltage V VC ∆T=40 °C - - 1.6Parameters are over operating temperature range unless otherwise noted. *See Ordering Options for operating powers available.

RF Characteristics (NTSC 77)Parameter Symbol Test Conditions Min Typ MaxFrequency Range MHz F - 0.3 - 2200Frequency Response dB | S21 | Ir=Iop - ±2 -

0.3 to 2200MHzT=25 °C

Relative Intensity Noise dB/Hz RIN CW,Ir = Iop, f=0.3MHz to 2200MHz, - -150 -Optical reflection=-40dB

Third-Order Intermodulation Distortion dBc IMD3 Two-tones 936MHz, - -60 -958MHz, OMI=0.2, Ir=Iop

Safety InformationAll versions of this laser are Class 3B laserproducts per IEC* 60825-1:2001. Usersshould observe safety precautions such asthose recommended by ANSI** Z136.1-2000,ANSI Z36.2- 1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR1040.10 and 1040.11. Consequently, thislaser module is only intended for use as acomponent by manufacturers of electronicproducts and equipment.

Wavelength =1.5 µmMaximum Power = 100 mWSingle-mode fibre pigtailFibre Numerical Aperture = 0.14

Labeling is not affixed to the laser module dueto size constraints; rather, labeling is placedon the outside of the shipping box.


Caution: use of controls or adjustments or performance of procedures other thanthose specified herein may result in hazardous radiation exposure.

*IEC is a registered trademark of the International Electrotechnical Commission

**ANSI is a registered trademark of the American National Standards Institute

D F B - 1 X X X - B F - x x - A 2 - x x

Wavelength Rated Output Power Pr Connector

470 = 1470nm 08 = 8mW SA = SC/APC

490 = 1490nm 10 = 10mW FA = FC/APC

510 = 1510nm 13 = 13mW NC = No Connector

530 = 1530nm

550 = 1550nm

570 = 1570nm

590 = 1590nm

610 = 1610nm


ISOLATOR

Figure 1: Laser Schematic

1

2

3

(-) 4

(+) 5

(+) 6

(-) 7

14 GND

13 GND (+)

12 (-)

11 GND (+)

10 GND

9 GND

8 GNDTEC

Pin InformationPin DescriptionNo.1 Thermistor2 Thermistor3 Dc Laser Bias (-)4 MPD Anode Case Ground (-)5 MPD Cathode (+)6 Thermoelectric Cooler (+)7 Thermoelectric Cooler (-)8 Case Ground

Pin DescriptionNo.9 Case Ground

10 Case Ground11 Laser Common (+),

Case Ground12 Laser Modulation (-)13 Laser Common (+),

Case Ground14 Case Ground

Dimensions in mm

26Pin 12 to have 25 OhmImpedance Matched Input

2 x Lead Rack

2 x Ceramic

Body

2

2 x 15

20.83

17.78

15

30

6.35

6.35

6.11

0.75

1.50

0.75

9.38

12.7

012

.70

12.7

1.9

8.9

PIN

1

PIN

14

4 x Ø2.70 ±0.10 THRU

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DFB-1310-C5-2-A2-xx-x-x

• Advanced Multiple Quantum Well (MQW) Distributed Feedback (DFB)Laser Design

• Low Distortion- IMD2 max -50 dBc- IMD3 max -55 dBc



with SMF pigtail

Applications• Wireless (CDMA, GSM, PCS)

fiber-optic repeaters• Analog transmission

The DFB-1310-C5-2-A2-xx-x-x series of Multi-Quantum Well (MQW) Distributed Feedback (DFB)lasers have been designed specifically analog appli-cations, especially wireless repeater applications.


Their uncooled, hermetically sealed, coaxial fiber- pig-tailed packages are a cost-effective means of provid-ing a highly linear light source for intermediate- reachand long-reach analog transmission applications.


Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T -20 - 85*Optical Output Power mW Po 2.0 2.5 - CWThreshold Current mA Ith - 12 18 T=25 °C

- 35 50 T=85 °COperating Current mA Iop - 60 80 T=85 °CForward Voltage V VF - 1.1 1.6 Po=2.0 mWCenter Wavelength nm λc 1280 1310 1335 Po=2.0 mW, CWSpectral Width (-20 dB) nm ∆λ - 0.1 1.0 Po=2.0 mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.09 -Side-mode Suppression Ratio dB SMSR 30 40 - Po=2.0 mWMonitor Current µA/mW Imon 75 - 400 VR=5 VMonitor Dark Current nA ID - - 200 VR=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Pf/2.0) [dB]Optical Isolation dB ISO 30 35 -

Parameters are at 25 °C unless otherwise noted. * See Ordering Options for operating temperature ranges available.


f=300 MHz to 1000 MHzRelaxation Oscillation Frequency GHz fR - 4.5 - Po=2.0mWModulation Bandwidth GHz BW 2.5 - - -3dB, Po=2mWSecond-Order Intermodulation dBc IMD2 - - -50 T=25 °C, Po=2 mW,

OMI=0.1, Two-tonetest, 13 MHz and 19 MHz, 7dB plus

connector lossThird-Order Intermodulation dBc IMD3 - - -55 T=25 °C, Po=2.0 mW,

OMI=0.1, Two-tonetest, 13 MHz and 19 MHz,7dB plus connector loss,

all peaks from 5MHz to 50MHz meet this level

Carrier-to-Noise ratio dB CNR 50 - - T=25 °C, Po=2.0 mW,OMI=0.1, ref. To one-

tone: 5 MHz to 50 MHz,7dB plus connector loss




Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 3 1 0 - C 5 - 2 - A 2 - x x - x - x

Connector Temperature Pin AssignmentSC=SC/PC A=-20°C to 85°C A= Pin Type AFC=FC/PC B=-20°C to 75° C= Pin Type CSA=SC/APCFA=FC/APCNC=No Connector




Wavelength =1.3 µmMaximum Power = 75mWSingle-mode fiber pigtailFiber Numerical Aperture = 0.14





4

3

2

1

00 10 20 30 40 50 60 70 80

Current (mA)

Pow

er (

mW

)


-20 C 25 C

70 C 85 C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 10 20 30 40 50 60 70 80 90

Current (mA)

Vol

tage

(V

)


80 C

10

0

-10

-20

-30

-40

-50

-60

-701306 1307 1308 1309 1310 1311 1312

Wavelength (nm)

Rel

ativ

e In

tens

ity (

dB)

Output Spectrum

Tc=25°CCW

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DFB-1310-C5-2-A-xx-x-xDFB-1310-C5-3-A-xx-x-xDFB-1310-C5-4-A-xx-x-x

• Advanced Multiple Quantum Well (MQW) Distributed Feedback (DFB)Laser Design




with SMF pigtail

Applications• CATV Return-path• Analog transmission

These Multi-Quantum Well (MQW) DistributedFeedback (DFB) lasers have been designed specificallyanalog applications, especially CATV return-path.


Their uncooled, hermetically sealed, coaxial fibre -pigtailed packages are a cost-effective means of providing a highly linear light source for intermediate -reach and long-reach analog transmission applications.


Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T -20 - 85*Optical Output Power mW Po 2.0 2.2 - CWThreshold Current mA Ith - 12 18 T=25 °C

- 35 50 T=85 °COperating Current mA Iop - 60 80 T=85 °CForward Voltage V VF - 1.1 1.6 Po=Pmin mWCenter Wavelength nm λc 1280 1310 1340 Po=Pmin mW, CWSpectral Width (-20 dB) nm ∆λ - 0.1 1.0 Po=Pmin mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.09 -Side-mode Suppression Ratio dB SMSR 30 40 - Po=Pmin mWMonitor Current µA/mW Imon 75 - 400 VR=5 VMonitor Dark Current nA ID - - 200 VR=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Pf/Pmin) [dB]Optical Isolation dB ISO 30 35 -

Parameters are at 25 °C unless otherwise noted. * See Ordering Options for operating temperature ranges available.

RF CharacteristicsParameter Symbol Min Typ Max Test ConditionsRelative Intensity Noise dB/Hz RIN - - -145 CW,Po=Pmin,

f=5 MHz to 300 MHzRelaxation Oscillation Frequency GHz fR - 4.5 - Po=PminModulation Bandwidth GHz BW 1.0 - - -3dB, Po=PminSecond-Order Intermodulation dBc IMD2 - - -50 T=25 °C, Po=Pmin,


connector lossThird-Order Intermodulation dBc IMD3 - - -55 T=25 °C, Po=Pmin,



Carrier-to-Noise ratio dB CNR 50 - - T=25 °C, Po=Pmin,OMI=0.1, ref. To one-





Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)








4

3

2

1

00 10 20 30 40 50 60 70 80

Current (mA)

Pow

er (

mW

)


-20 C 25 C

70 C 85 C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 10 20 30 40 50 60 70 80 90

Current (mA)

Vol

tage

(V

)


80 C

10

0

-10

-20

-30

-40

-50

-60

-701306 1307 1308 1309 1310 1311 1312

Wavelength (nm)

Rel

ativ

e In

tens

ity (

dB)

Output Spectrum

Tc=25°CCW

Ordering InformationD F B - 1 3 1 0 - C 5 - 2 - A - x x - x - xD F B - 1 3 1 0 - C 5 - 3 - A - x x - x - xD F B - 1 3 1 0 - C 5 - 4 - A - x x - x - x

Connector Temperature Pin AssignmentSC=SC/PC A=-20°C to 85°C A= Pin Type AFC=FC/PC B=-20°C to 75° C= Pin Type CSA=SC/APCFA=FC/APCNC=No Connector

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ISOLATOR


1

2

3

(-) 4

(+) 5

(+) 6

(-) 7

14 NC

13 (+)

12 (-)

11 (+)

10 NC

9 CASE GROUND

8 CASE GROUND

TEC

1310nm DFB Lasers,860MHz, BFY Package

DFB-1310-BF-xx-Ax-xx

• Standard OC-48 pin compatibility• Negative bias• Optimized for PAL-D

and NTSC channel counts• Output power up to 31mW• Meets GR 468

reliability specifications

Applications• CATV forward

and return path• 1310-nm broadcast and

point-to-point applications

The DFB-1310-BF-xx-Ax-xx DFB laser modules aredesigned for forward- and return- path CATV applications.The modules are designed to incorporate high outputpower while maintaining high linearity. The devices featurestandard pin assignments (compatible with OC-48).

The modules are excellent sources for use in CATV systemsincorporating both PAL-D, with 60 channel loading, andNTSC, with up to 78 channels. The combination of highperformance and very reasonable price make thesemodules the most cost- effective CATV transmittersolutions in the industry.

DistortionParameter Symbol Test Conditions Min Typ MaxDFB-1310-BF-xx-A3-xxCarrier to Noise Ratio dB CNR Note 1 53 - -Composite Second Order dBc CSO Note 1 - - -63Composite Triple Beat dBc CTB Note 1 - - -70DFB-1310-BF-xx-A4-xxCarrier to Noise Ratio dB CNR Note 1 53 - -Composite Second Order dBc CSO Note 1 - - -60Composite Triple Beat dBc CTB Note 1 - - -67DFB-1310-BF-xx-A5-xxCarrier to Noise Ratio dB CNR Note 1 51 - -Composite Second Order dBc CSO Note 1 - - -60Composite Triple Beat dBc CTB Note 1 - - -65DFB-1310-BF-xx-A6-xxCarrier to Noise Ratio dB CNR Note 1 53 - -Composite Second Order dBc CSO Note 1 - - -56Composite Triple Beat dBc CTB Note 1 - - -58Note 1: Test condition: Po= Pr, OMI 3.2%, 77 unmodulated carriers (50 to 550 MHz), Received Power=-4 dBm.

Absolute Maximum RatingsParameter Symbol Condition Min MaxOperating Case Temperature °C Tc I=Iop -20 65Storage Temperature °C Tstg - -40 85Laser Forward Current mA If - - 120Laser Reverse Bias V Vr - - 2Photodiode Reverse Bias V Vrpd - - 10TEC Current A Itec -20°C < Tc <+65°C, - 1.5

Top=25 °CIf=100 mA

RF Characteristics (NTSC 77)Parameter Symbol Test Conditions Min Typ MaxFrequency Range MHz F - 45 - 860Frequency Response dB | S21 | I=82mA - ± 0.5 -

45MHz - 860MHzT=25 °C

Relative Intensity Noise dB/Hz RIN CW,Po= mW, f=45MHz to 860MHz, - -155 -150Optical reflection=-40dB

Electrical and Optical CharacteristicsParameter Symbol Test Conditions Min Typ MaxCenter Wavelength nm λc CW 1290 1310 1330Spectral Width (-20dB) nm ∆λ CW - 0.1 1.0Optical Output Power* mW Po CW, TL=25 °C 4 - 31Optical Isolation dB IS T=25 °C 30 - -Side-mode Suppression Ratio dB SMSR CW 30 - -Threshold Current mA Ith TL=25 °C - 12 18Operating Current mA Iop CW - - 120Forward Voltage V VF CW - 1.2 1.7Monitor Current µA/mW Imon VR=5V 10 - 150Monitor Dark Current nA ID VR=5V - - 200Operating Case Temperature °C T -20 - 65Tracking Error dB γ Imon=const, γ=10 log (Pf/Po) [dB] -0.5 - 0.5Thermistor Resistance K Rt T=25 °C 9.5 - 10.5Thermistor B Constant K B T=25 °C - 3900 -TEC Current A IC ∆T=40 °C - - 1.0TEC Voltage V VC ∆T=40 °C - - 2.0Parameters are over operating temperature range unless otherwise noted. *See Ordering Options for operating powers available.

Safety InformationAll versions of this laser are Class 3B laser products per IEC* 60825-1:2001.Users should observe safety precautions such as those recommendedby ANSI** Z136.1-2000, ANSI Z36.2- 1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and 1040.11.Consequently, this laser module is only intended for use as a componentby manufacturers of electronic products and equipment.


Labeling is not affixed to the laser module due to size constraints; rather,labeling is placed on the outside of the shipping box.


Caution: use of controls or adjustments or performance of proceduresother than those specified herein may result in hazardous radiationexposure.

*IEC is a registered trademark of the International Electrotechnical Commission**ANSI is a registered trademark of the American National Standards Institute

DFB-1310 -BF-xx -Ax -xx

Rated OutputModulation ConnectorPower Pr

04 = 4mW 3 = Distortion Range 3 SC = SC/PC06 = 6mW 4 = Distortion Range 4 FC = FC/PC08 = 8mW 5 = Distortion Range 5 SA = SC/APC10 = 10mW 6 = Distortion Range 6 FA = FC/APC13 = 13mW NC = No Connector16 = 16mW19 = 19mW22 = 22mW25 = 25mW28 = 28mW31 = 31mW


14

13

12

11

10

9

8

1

2

3

4

5

6

7

See figures3A and 3B

39nH

200

NC

LaserCommon (+)

LaserModulation(-)

LaserCommon (+)

NC

CaseGround

CaseGround

Thermistor

Thermistor

dc Laser Bias

MPD AnodeCase Ground

MPDCathode

TEC (+)

TEC (-)

0.01 µF C7

3:5

PIN12

0.5pF-2.5 pF

VSWR

FrequencyResponse

R137.5

R237.5

PIN12

1pF-5pF

0.01µF 0.01µF

T123

Figure 2: Circuit Diagram

Figure 3A: Impedance-Matched Configuration

Figure 3B: Resistive-Matched Configuration

Pin DescriptionNo.8 Case Ground9 Case Ground10 NC11 Laser Common (+)12 Laser Modulation (-)13 Laser Common (+), 14 NC

26Pin 12 to have 25 OhmImpedanceMatchedInput

2 x Lead Rack

2 x Ceramic

Body

2

2 x 15

20.83

17.78

15

30

6.35

6.35

6.11

0.75

1.50

0.75

9.38

12.7

012

.70

12.7

1.9

8.9

PIN

1

PIN

14

4 x Ø2.70 ±0.10 THRU

Pin InformationPin DescriptionNo.1 Thermistor2 Thermistor3 Dc Laser Bias (-)4 MPD Anode Case Ground (-)5 MPD Cathode (+)6 Thermoelectric Cooler (+)7 Thermoelectric Cooler (-)

Dimensions in mm

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D F B - 1 5 5 0 - C 5 - 2 - A - x x - x - x




SA=SC/APC

FA=FC/APC

NC=No Connector


DFB-1550-C5-2-A-xx-x-x

• Advanced Multiple Quantum Well (MQW) Distributed • Feedback (DFB) Laser Design




with SMF pigtail


The DFB-1550-C5-2-A-xx-x-x series of Multi-QuantumWell (MQW) Distributed Feedback (DFB) lasers havebeen designed specifically for analog applications,especially CATV return-path.


Their uncooled, hermetically sealed, coaxial fibre -pigtailed packages are a cost-effective means of providing a highly linear light source for intermediate -reach and long-reach analog transmission applications.










OMI=0.1, Two-tonetest, 13 MHz and 19

MHz, Receiver power:-4 dBm

Third-Order Intermodulation dBc IMD3 - - -55 T=25 °C, Po=2.0 mW,OMI=0.1, Two-tonetest, 13 MHz and 19

MHz, Receiver power:-4 dBm


tone: 5 MHz to 50 MHz,Receiver power:

-4 cBmRF Bandpass Flatness dB BF - - 1.0 Peak to valley, 5 MHz

to 300 MHz










Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

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DFB-1550-C5-2-A-xx-A-x


• Low Distortion- IMD2 -50 dBc- IMD3 -55 dBc


Laser Technology• SMSR typ. 40 dB• 5.6-mm TO-style package,

with SMF fibre pigtail


The DFB-1550-C5-2-A-xx-x-x series of Multi-QuantumWell (MQW) Distributed Feedback (DFB) lasers havebeen designed specifically analog applications, espe-cially CATV return-path.




Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T -20 - 70Optical Output Power mW Po 2.0 - - CWThreshold Current mA Ith - 17 25 T=25 °C


log (Po/2.0) [dB]Optical Isolation dB ISO 30 35 -


f=5 MHz to 300 MHzModulation Bandwidth GHz BW 3 - - -3dB, Po=2mWSecond-Order Intermodulation dBc IMD2 - - -50 T=25 °C, Po=2 mW,










Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 3 1 0 - C 5 - 2 - A - x x - A - x

Connector Pin Assignment

SC=SC/PC A= Pin Type A

FC=FC/PC C= Pin Type C

SA=SC/APC

FA=FC/APC

NC=No Connector










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1550nm DFB Lasers,860MHz, BFY Package

DFB-1550-BF-xx-A3-xx

• Standard OC-48 pin compatibility• Negative bias• Optimized for PAL-D and

NTSC channel counts• Output power up to 10 mW• Meets GR 468 reliability specifications

Applications• CATV forward-path• 1550-nm broadcast and

point-to-point applications

The DFB-1550-BF-xx-A3-xx DFB laser modules aredesigned for forward-path CATV applications. Themodules are designed to incorporate high output powerwhile maintaining high linearity. The devices featurestandard pin assignments (compatible with OC-48).

The modules are excellent sources for use in CATVsystems incorporating both PAL-D, with 60 channelloading, and NTSC, with up to 77 channels. The combination of high performance and very reasonableprice make these modules the most cost - effectiveCATV transmitter solutions in the industry.


Top=25 °CIf=100 mA

Electrical and Optical CharacteristicsParameter Symbol Test Conditions Min Typ MaxCenter Wavelength nm λc Po= Pr, CW 1530 1545 1560Optical Output Power* mW Po CW, TL=25 °C 6.0 - 10.0Optical Isolation dB IS T=25 °C 30 - -Side-mode Suppression Ratio dB SMSR Po= Pr 30 - -Threshold Current mA Ith TL=25 °C - 14 20Operating Current mA Iop Po= Pr - 80 120Forward Voltage V VF Po= Pr - 1.2 1.9Monitor Current µA/mW Imon Vrpd=5V 15 - 150Monitor Dark Current nA ID Vrpd=5V - - 200Operating Case Temperature °C T -20 - 65Tracking Error dB γ Imon=const, γ=10 log (Po/Pr) [dB] -0.5 - 0.5Thermistor Resistance K Rt T=25 °C 9.5 - 10.5Thermistor B Constant K B T=25 °C - 3900 -TEC Current A IC ∆T=40 °C - - 1.5TEC Voltage V VC ∆T=40 °C - - 2.0Parameters are over operating temperature range unless otherwise noted. *See Ordering Options for operating powers available.

RF Characteristics (NTSC 77)Parameter Symbol Test Conditions Min Typ MaxFrequency Range MHz F - 45 - 860Frequency Response dB | S21 | If=Iop - ± 0.5 -

45MHz - 860MHzT=25 °C

Relative Intensity Noise dB/Hz RIN CW,Po= Pr, f=45 MHz to 860MHz, - -155 -Optical reflection=-40dB

Composite Second Order Distortion dBc CSO Note 1 - - -51Composite Triple Beat dBc CTB Note 1 - - -63Carrier to Noise Ratio dB CNR Note 1 51 - -Note 1: Test condition: Po= Pr, OMI=3.2%/ch., 77 unmodulated carriers (50 to 550 MHz), received power= 0 dBm.

Safety InformationAll versions of this laser are Class 3B laserproducts per IEC* 60825-1:2001. Usersshould observe safety precautions such asthose recommended by ANSI** Z136.1-2000,ANSI Z36.2- 1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR1040.10 and 1040.11. Consequently, thislaser module is only intended for use as acomponent by manufacturers of electronicproducts and equipment.


Labeling is not affixed to the laser module dueto size constraints; rather, labeling is placedon the outside of the shipping box.


Caution: use of controls or adjustments or performance of procedures other thanthose specified herein may result in haz-ardous radiation exposure.



D F B - 1 5 5 0 - B F - x x - A 3 - x x

Rated Output Power Pr Connector

06 = 6mW SC = SC/PC

08 = 8mW FC = FC/PC

10 = 10mW SA = SC/APC

FA = FC/APC

NC = No Connector


ISOLATOR


1

2

3

(-) 4

(+) 5

(+) 6

(-) 7

14 GND

13 GND (+)

12 (-)

11 GND (+)

10 GND

9 GND

8 GNDTEC

Pin InformationPin DescriptionNo.1 Thermistor2 Thermistor3 Dc Laser Bias (-)4 MPD Anode Case Ground (-)5 MPD Cathode (+)6 Thermoelectric Cooler (+)7 Thermoelectric Cooler (-)8 Case Ground

Pin DescriptionNo.9 Case Ground

10 Case Ground11 Laser Common (+),

Case Ground12 Laser Modulation (-)13 Laser Common (+),

Case Ground14 Case Ground

Dimensions in mm

26Pin 12 to have 25 OhmImpedance Matched Input

2 x Lead Rack

2 x Ceramic

Body

2

2 x 15

20.83

17.78

15

30

6.35

6.35

6.11

0.75

1.50

0.75

9.38

12.7

012

.70

12.7

1.9

8.9

PIN

1

PIN

14

4 x Ø2.70 ±0.10 THRU

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14

13

12

11

10

9

8

1

2

3

4

5

6

7

See figures3A and

3B

39nH

200

NC

LaserCommon (+)

LaserModulation(-)

LaserCommon (+)

NC

CaseGround

CaseGround

Thermistor

Thermistor

dc Laser Bias

MPD AnodeCase Ground

MPDCathode

TEC (+)

TEC (-)

Figure 2: Circuit Diagram

Pin DescriptionNo.8 Case Ground9 Case Ground10 NC11 Laser Common (+)12 Laser Modulation (-)13 Laser Common (+), 14 NC

26Pin 12 to have 25 OhmImpedanceMatchedInput

2 x Lead Rack

2 x Ceramic

Body

2

2 x 15

20.83

17.78

15

30

6.35

6.35

6.11

0.75

1.50

0.75

9.38

12.7

012

.70

12.7

1.9

8.9

PIN

1

PIN

14

4 x Ø2.70 ±0.10 THRU

1550nm DFB Lasers, 860MHz, BFY Package

DFB-1550-BF-10-Ax-xx

The DFB-1550-BF-10-Ax-xx DFB laser modules are designed for forward-and return- path CATV applications. The modules are designed toincorporate high output power while maintaining high linearity. Thedevices feature standard pin assignments (compatible with OC-48).

The modules are excellent sources for use in CATV systems incorporatingboth PAL-D, with 60 channel loading, and NTSC, with up to 78 channels.

• Standard OC-48 pin compatibility

• Negative bias• Optimized for PAL-D

and NTSC channel counts• Output power

to 10 mW• Meets GR 468

reliability specifications

Applications• CATV forward

and return path• 1550-nm broadcast

and point-to-point applications


Top=25 °CIf=100 mA

Electrical and Optical CharacteristicsParameter Symbol Test Conditions Min Typ MaxCenter Wavelength nm λc Po= Pr, CW 1530 1545 1560Optical Output Power* mW Po CW, TL=25 °C 10.0 - -Optical Isolation dB IS T=25 °C 30 - -Side-mode Suppression Ratio dB SMSR Po= Pr 30 - -Threshold Current mA Ith TL=25 °C - 20 35Operating Current mA Iop Po= Pr - 120 150Forward Voltage V VF Po= Pr - 1.2 1.9Monitor Current µA/mW Imon Vrpd=5V 15 - 150Monitor Dark Current nA ID Vrpd=5V - - 200Operating Case Temperature °C T -20 - 65Tracking Error dB γ Imon=const, γ=10 log (Po/Pr) [dB] -0.5 - 0.5Thermistor Resistance K Rt T=25 °C 9.5 - 10.5Thermistor B Constant K B T=25 °C - 3900 -TEC Current A IC ∆T=40 °C - - 1.0TEC Voltage V VC ∆T=40 °C - - 2.0Parameters are over operating temperature range unless otherwise noted. *See Ordering Options for operating powers available.

RF Characteristics (NTSC 77)Parameter Symbol Test Conditions Min Typ MaxFrequency Range MHz F - 45 - 860Frequency Response dB | S21 | If=Iop - ± 0.5 -

45MHz - 860MHzT=25 °C

Relative Intensity Noise dB/Hz RIN CW,Po= Pr, f=45 MHz to 860MHz, - -155 -Optical reflection=-40dB

Composite Second Order Distortion dBc CSO Note 1, 2 - - -50Composite Triple Beat dBc CTB Note 1, 3 - - -60Carrier to Noise Ratio dB CNR Note 1 53 - -Note 1: Test condition: Po = 10mW, OMI 10%, eight channels, Received Power = -4dBm. Note 2: Measured at 42MHzNote 3: Measured at 553.25MHz, 577.25MHz, and 595.25MHz

Safety InformationAll versions of this laser are Class 3B laser productsper IEC* 60825-1:2001. Users should observe safetyprecautions such as those recommended by ANSI**Z136.1-2000, ANSI Z36.2- 1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and1040.11. Consequently, this laser module is only intend-ed for use as a component by manufacturers of electronicproducts and equipment.


Labeling is not affixed to the laser module due to sizeconstraints; rather, labeling is placed on the outside ofthe shipping box.


Caution: use of controls or adjustments or performanceof procedures other than those specified hereinmay result in hazardous radiation exposure.



DFB-1550-BF-10-Ax-xx

Modulation Connector3 = Distortion Range 3 SC = SC/PC

4 = Distortion Range 4 FC = FC/PC

5 = Distortion Range 5 SA = SC/APC

6 = Distortion Range 6 FA = FC/APC

NC = No Connector

Ordering InformationISOLATOR


1

2

3

(-) 4

(+) 5

(+) 6

(-) 7

14 NC

13 (+)

12 (-)

11 (+)

10 NC

9 CASE GROUND

8 CASE GROUNDTEC

Pin InformationPin DescriptionNo.1 Thermistor2 Thermistor3 Dc Laser Bias (-)4 MPD Anode Case Ground (-)5 MPD Cathode (+)6 Thermoelectric Cooler (+)7 Thermoelectric Cooler (-)

0.01 µFC7

3:5

PIN12

0.5pF-2.5 pF

VSWR

FrequencyResponse

R137.5

R237.5

PIN12

1pF-5pF

0.01µF 0.01µF

T123

Figure 3A: Impedance-Matched Configuration

Figure 3B: Resistive-Matched Configuration

Dimensions in mm

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15XXnm DFB Lasers,300MHz, Coax Package

DFB-1xxx-C5-2-A-xx-x-x


• Low Distortion- IMD2 -50 dBc- IMD3 -55 dBc



with SMF pigtail


The DFB-1xxx-C5-2-A-xx-x-x series of Multi-QuantumWell (MQW) Distributed Feedback (DFB) lasers havebeen designed specifically analog applications, espe-cially CATV return-path.

The devices feature multiple available wavelengths onthe ITU CWDM grid, low distortion characteristics, lowRIN noise, and high side mode suppression.




- 35 50 T=75 °COperating Current mA Iop - 70 100 T=75 °CForward Voltage V VF - 1.1 1.6 Po=2.0 mWCenter Wavelength nm λc 1510 - 1570 Po=2.0 mW, CWCenter Wavelength Accuracy nm ∆λacc -3 - +3 Po=2.0mW, CW, T=25°CSpectral Width (-20 dB) nm ∆λ - 0.1 1.0 Po=2.0 mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.11 -Side-mode Suppression Ratio dB SMSR 30 40 - Po=2 mWMonitor Current µA/mW Imon 75 - 400 Vrpd=5 VMonitor Dark Current nA ID - - 200 Vrpd=5 VTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Po/2.0) [dB]Optical Isolation dB ISO 30 35 -



f=5 MHz to 300 MHzRelaxation Oscillation Frequency GHz fR - 4.5 - Po=2.0mWModulation Bandwidth GHz BW 1.0 - - -3dB, Po=2.0mWSecond-Order Intermodulation dBc IMD2 - - -50 T=25 °C, Po=2 mW,



OMI=0.1, Two-tonetest, 13 MHz and 19

MHz, 7dB plus connector loss, all peaks

from 5MHz to 50MHz meet this level






Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 x x x - C 5 - 2 - A - x x - x - x

Wavelength Connector Temperature Pin Assignment

510=1510nm SC=SC/PC A=-20°C to 85°C A= Pin Type A

530=1530nm FC=FC/PC B=-20°C to 75° C= Pin Type C

550=1550nm SA=SC/APC

570=1570nm FA=FC/APC

NC=No Connector


Safety InformationAll versions of this laser are Class 3B laser products per IEC*60825-1:2001. Users should observe safety precautions such asthose recommended by ANSI** Z136.1-2000, ANSI Z36.2-1997 and IEC 60825-1:2001.

This product does not conform to 21 CFR 1040.10 and 1040.11.Consequently, this laser module is only intended for use as a component by manufacturers of electronic products and equipment.




Caution: use of controls or adjustments or performance of procedures other than those specified herein may result inhazardous radiation exposure.



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13XXnm DFB Lasers,10GHz, Coax Package

DFB-1xxx-C5-2-3.2-xx-x-x-x


• Engineered Specifically for 10 GigE LX-4 WWDM Applications

• Low-Cost Uncooled Laser Technology• 1-meter SMF-28 Fibre Pigtail• 5.6-mm TO-style package

Applications• 10 Gigabit Ethernet• Long-distance WWDM transmitter

The DFB-1xxx-C5-2-3.2-xx-x-x-x series of Multi-Quantum Well (MQW) Distributed Feedback (DFB)lasers have been designed specifically to satisfy therequirements of the 10 Gigabit Ethernet LX-4 standard.

The devices emit at all four wavelengths specified inthe standard, and feature high output power and wideoperating temperature range.

Their uncooled, hermetically sealed, coaxial fibre-pig-tailed packages are a cost-effective means of imple-menting a Wide-Wavelength Division Multiplexedtransmitter in the 1310-nm band.


Electrical and Optical CharacteristicsParameter Symbol Min Typ Max Test ConditionsOperating Temperature °C T 0 - 85Optical Output Power mW Po 2 2.2 - CWThreshold Current mA Ith - 12 18 T=25 °C

- 35 50 T=85 °CForward Voltage V VF - 1.1 1.6 Po=2.0 mWOperating Current mA Iop - 22 35 Po=2.0mW, T=25 °C

- 60 75 Po=2.0mW, T=85 °CCenter Wavelength nm λ1 1270 1275 1282 Po=2.0 mW, CW

λ2 1294 1300 1306λ3 1319 1325 1331λ4 1343 1349 1355

RMS Spectral Width nm ∆λ - 0.1 0.62 Po=2.0mWWavelength temperature coefficient nm/°C ∆λ/∆T - 0.09 0.1Side-mode Suppression Ratio dB SMSR - - 0 Po=2.0 mWRise / Fall Times ns tR, tF - - 0.1 Ppeak=2.0mW, 20% to 80%Relaxation Oscillation Frequency GHz fR - 4.5 - Po=2.0mWMonitor Current µA/mW Imon 75 - 400 Vrpd=5 VMonitor Dark Current nA ID - - 200 Vrpd=5 VRelative Intensity Noise dB/Hz RIN - -130 -120 Po=2.0mW, 30db isolationTracking Error dB γ -1 - 1 Imon=const, γ =10

log (Pf/2.0) [dB]Optical Isolation* dB ISO 30 35 -

* Optical isolation is only applicable to devices that include the optical isolator option.



Ø0.90

20.030±0.5

10.5

4

2

31

Ø6.30

Ø5.60

4-Ø0.45±0.04

Ø2.00±0.20P.C.D.

Dimensions (in mm)

D F B - 1 x x x - C X - 2 - 3 . 2 - x x - x - x - x

Wavelength Connector Temperature Pin Assignment Isolator

275=1275nm=λ1 SC=SC/PC A=-20°C to 85°C A= Pin Type A I=Single-stage Isolator

300=1300nm=λ2 FC=FC/PC B=-20°C to 75° C= Pin Type C N=Not Isolated

325=1325nm=λ3 SA=SC/APC

349=1349nm=λ4 FA=FC/APC

NC=No Connector


0

-10

-20

-30

-40

-50

-60

-700 1G 2G 3G 4G 5G

Frequency (Hz)

Inpu

t R

etur

n Lo

ss S

11 (

dB)

Return Loss (S11)

43 SeriesResistance Added

15

10

5

0

-50.0 0.5 1.0 1.5 2.0 2.5

Modulation Voltage Vpp (V)

Ext

inct

ion

Rat

io (

dB)

Extinction Ratio vs. Modulation Voltage

2.488 GbpsNRZ

Safety InformationAll versions of this laser areClass 3B laser products per IEC*60825-1:2001. Users shouldobserve safety precautions suchas those recommended byANSI** Z136.1-2000, ANSIZ36.2-1997 and IEC 60825-1:2001.

This product does not conform to21 CFR 1040.10 and 1040.11.Consequently, this laser moduleis only intended for use as acomponent by manufacturers ofelectronic products and equipment.


Labeling is not affixed to the lasermodule due to size constraints;rather, labeling is placed on theoutside of the shipping box.

This product is not shipped witha power supply.

Caution: use of controls oradjustments or performance of procedures other than thosespecified herein may result inhazardous radiation exposure.

* IEC is a registered trademark of the International ElectrotechnicalCommission.


4

3

2

1

00 10 20 30 40 50 60 70 80

Current (mA)

Pow

er (

mW

)


-20 C 25 C

70 C 85 C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 10 20 30 40 50 60 70 80 90

Current (mA)

Vol

tage

(V

)


80 C

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Laser Diodes SM NIR >100mW


A1948 PLI

• 140 to 200mW output power• SMF or PMF Options• 30dB optical isolation• Internal TEC and monitor photodiode• Hermetic 14-pin butterfly package• Full performance in operating case temperature from 0 to +70°C

The Alcatel 1948 PLI module contains a SLMQW 1480nm high power laser coupledto the pigtail with an optical isolator. It incorporates a thermo-electric cooler, precisionNTC thermistor, and a monitor photodiode. The Alcatel 1948 PLI can be pigtailedwith a standard Single Mode Fibre (SMF) or a polarisation Maintaining Fibre (PMF).

A1943 RAP

• Any wavelength from 1385 - 1510nm• From 180 to 230mW output power versions• 2nm linewidth• Full performance in operating case temperature from -5°C to +70°C

The 1943 RAP module contains a SLMQW 1480nm high power laser. The wavelength is locked at a precise value with a Fibre Bragg Grating located in the pigtail.

It incorporates a thermo-electric cooler, precision NTC thermistor, monitor photodiode and is pigtailed with a Polarisation Maintaining Fibre (PMF) for stable operation under all conditions. This pump module is available at any wavelength in 0.5nm steps from 1355-1510nm.

DescriptionPIN 1: Peltier Cooler (+)PIN 2: ThermistorPIN 3: Photodetector AnodePIN 4: Photodetector CathodePIN 5: ThermistorPIN 6: NCPIN 7: NCPIN 8: NCPIN 9: NCPIN 10: Laser AnodePIN 11: Laser CathodePIN 12: NCPIN 13: CasePIN 14: Peltier Cooler (-)

20.83

1.016

5.6

9.8

Rigid, 33.9

Ø5.3(max.) 5.9 Ø0.3Ø5.4

0.051.6

30

1.25

912

.7

26

1.5

1.85

15.2

2

15.24

17.78

14x(0.5x0.2±0.06)

12.7

6.35

A1948 PLI

Butterfly Package- A 1998 PLM / A 1948 PLI / A 1943 RAP

MB51 & MB52

Dimensions in mm

7 6 5 4 3 2 1

8 9 1011121314

Optical characteristicsParameter A1948 PLI A1943 RAP

Min. Typ. Max. Min. Typ. Max.Threshold Current (Ith) mA 35 65 35 100Output Power Options mW 140 155 180 190

mW 160 175 200 210mW 180 200 230 240mW 190 210mW 200 220

Forward Voltage (Vf) V 2.1 2.5 2.1 2.7Monitoring Current µA 300 100 2700Wavelength Range 1460 1490 1390 1500Spectral Width (RMS) nm 15 2Photodiode Dark Current nA 50 9.5 300Photodiode Capacitance pF 15 20Thermistor Resistance kΩ 9.5 10.5 10.5TEC Current (Itec) A 1.3 2.5TEC Voltage (Vtec) V 4.2 4.5

1480nm, Singlemode Pigtailed, 14 Pin Butterfly, FP

240mW @ any wavelengthfrom 1385nm - 1510nm!

240mW @ any wavelengthfrom 1385nm - 1510nm!

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Single Mode Laser ModuleLU0808M100

• Up to 100mW operation power• Wavelength 790 - 810nm• High kink-free power• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilised on request

The Lumics LU0808M100 laser diode module contains an optimisedInGaAsP/GaInP/AIGaAs quantum well high power laser on GaAssubstrate. The extremely stringent reliability requirements are achievedthrough our patent pending innovative technology. This includescareful design, exactly defined manufacturing and extensive testing.The qualification contains a set of optoelectronic, thermal andmechanical tests. Each laser diode module is individually serialised for traceability and is shipped with a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Temp. °C TOP, max -20 70Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IF, max - 40.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm - 25 -

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power

LU0800M100 mW IOP = <240mA POP 100 - -Kink Free (1) Power mW at 25°C Pk - 1.2 * POP -Operating Forward Current (2)

LU0980M100 mA POP = 100mW IOP - 250 300

Threshold Current mA - Ith - 80 100Forward Voltage V at IOP VOP - 2.0 2.5Peak Wavelength nm as specified ±10nm lpeak 790 - 810Spectral Width (FWHM) nm at POP, no FBG ∆λ - - 4Optical Power Stability % at IOP, t = 60 sec POP/t - - 0.5Spectral Shift With Temp. nm/°C Chip Temp. λ/T - 0.3 -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor Constant K - B 3850 3892 3900Fibre Type - Singlemode FS-SN-4224, NA 0.12 - - -(1) kink-free is defined as ldL/dl - <dL/dl> | <0.2, where <dL/dl> is the average slope efficiency below kink(2) Operating current (power) is the maximum current (power) where slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power.

Pin Function Pin Function1 Cooler (+) 8 NC2 Thermistor 9 NC3 PD Anode (-) 10 LD Anode (+)4 PD Cathode (+) 11 LD Cathode (-)5 Thermistor 12 nc6 NC 13 Case Ground7 NC 14 Cooler (-)

7 6 5 4 3 2 1

8 9 10 11 12 13 14

Ordering InformationLU 0980 M 250 xxxLumics Wavelength Modul Power (POP) Version

- Fibre Type- Termination

-FBG

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections

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Single Mode Laser ModuleLU0845M100

• Up to 100mW operation power• Wavelength 840-860nm• High kink-free power• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilised on request

The Lumics LU0845M100 laser diode module contains an optimisedInGaAsP/GaInP/AIGaAs quantum well high power laser on GaAssubstrate. The extremely stringent reliability requirements areachieved through our patent pending innovative technology. Thisincludes careful design, exactly defined manufacturing and extensivetesting. The qualification contains a set of optoelectronic, thermaland mechanical tests. Each laser diode module is individually serialisedfor traceability and is shipped with a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Temp. °C TOP, max -20 40Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IF, max - 300LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm - 25 -

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating PowerLU0850M100 mW IOP = <240mA POP 100 - -Operating Forward CurrentLU0850M100 mA POP = 100mW IOP - 200 250Threshold Current mA - Ith - 100 150Forward Voltage V at IOP VOP - 1.65 2Peak Wavelength nm as specified ±10nm λpeak 800 845 860Spectral Width (FWHM) nm at POP, no FBG ∆λ - 1 4Optical Power Stability % at IOP, t = 60sec POP/t - - 0.5Spectral Shift With Temp. % Chip Temp. λ/T - 0.3 -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor Constant K - B 3850 3892 3900Fibre Type - Singlemode - - - -


7 6 5 4 3 2 1

8 9 10 11 12 13 14



-FBG

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections

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Singlemode Laser ModuleLU0845M200

• Up to 400mW Pulse Power• Up to 200Mbit/s• Wavelength 840 - 860nm• Operation power up to 200mW CW• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilised on request

The Lumics LU0845M200 module is a high power directly modulatedlaser source designed for free space communication. It provideshigh pulse power up to 400mW with rise and fall times in the nsecrange. The laser diode contains an optimised InGaAsP / GaInP /AlGaAs quantum well high power laser on GaAs substrate.

The extremely stringent reliability requirements are achieved throughour patent pending innovative technology. This includes carefuldesign, exactly defined manufacturing and extensive testing. Thequalification contains a set of optoelectronic, thermal and mechanicaltests. Each laser diode module is individually serialised for traceabilityand is shipped with a specific set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Temp. °C Top, max -20 40Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IF, max - 300LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm - 25 -


7 6 5 4 3 2 1

8 9 10 11 12 13 14

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections



- FBG

CharacteristicsParameter Conditions Symbol Min Typ MaxOperating Power mW CW Operation Pop 200 - -Operating Forward Current mA Pop = 200mW Iop - 400 450Threshold Current mA - Ith - 90 150Forward Voltage V at Iop Vop - 1.65 2Peak Wavelength nm as specified ± 10nm λpeak 800 845 860Spectral Width (FWHM) nm at Pop, no FBG ∆λ - 1 4Optical Power Stability % at Iop, t = 60sec Pop/t - - 0.5Spectral Shift With Temp. nm/°C Chip Temp. λ / T - 0.3 -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor Constant K - B 3850 3892 3900Fibre Type Singlemode

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940nm Laser ModuleLU0940M200

• Wavelength 940nm• High kink-free power• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Single mode fibre pigtail• Fibre Bragg Grating stabilisation on request

The Lumics LU0940M200 laser diode module contains an optimisedGaAs substrate based quantum well high power laser. It has beendesigned for customer specific applications and is available with specialFBGs and fibres. The extremely stringent reliability requirements areachieved through our patent pending innovative technology. Thisincludes careful design, exactly defined manufacturing and extensivetesting. The qualification contains a set of optoelectronic, thermaland mechanical tests. Each laser diode module is individually serialisedfor traceability and is shipped with a specified set of test data.

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power (940nm) mW LU0940M200 POP 200 - -Kink Free (1) Power mW at 25°C PK - 1.2*POP -Operating Current (2) mA POP = 200mW IOP - 340 380Threshold Current mA - Ith - 55 100Forward Voltage V at IOP VOP - 1.6 2.0Peak Wavelength nm - λpeak 930 940 950Spectral Width (FWHM) nm at POP ∆λ - 2 -Optical Power Stability % at IOP, t=60sec POP/t - - 0.5Polarisation: ex facet from chip dB TEM00 - 40 - -Spectral Shift With Temp. nm/°C - λ/T - 0.3 -Side Mode Suppression dB at POP - -20 - -Pulsed OperationPeak Power W 10kHz, 0.2µsec - 1 - -

W 10kHz, 0.1µsec - 2 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor B Constant K - B 3850 3892 3900Fibre SpecificationsFibre Type HI 1060, singlemode (PM Fibre HB980T on request)Cut-off Wavelength - - - - 920nm -Core Diameter (MFD) - - - - 4.7µm -Outer Diameter - - - - 250µm -Numeric Aperture - - NA - 0.14 -(1) Kink-free is defined as ldL/dl - <dL/dl>, where <dL/dl> is the average slope efficiency below kink.(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power. (3) λP95 is defined as 95% of total spectral power

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case -20 70Operating Chip Temp. °C TOP, chip 20 30Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IOP - 500LD Forward Current A IP (Pulse 200ns/Period 30µsec) - 2.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm HI 1060 25 -


7 6 5 4 3 2 1

8 9 10 11 12 13 14

Ordering InformationLU xxxx M 200 xxxLumics Wavelength Modul Power (POP) Version

to be spec. - Fibre Type- Termination

-FBG

0.2

26.0

30.0

20.83

6 x 2.54 0.5

15.2

12.7

8.9

7.70

5.10

5.40

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Dimensions (mm)

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• Wavelength 1055nm• High kink-free power• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilisation on request

The Lumics LU1055M200 laser diode module contains an optimised GaAs substratebased quantum well high power laser. It has been designed for customer specificapplications and is available with special FBGs and fibres. The extremely stringentreliability requirements are achieved through our patent pending innovative technology.This includes careful design, exactly defined manufacturing and extensive testing.The qualification contains a set of optoelectronic, thermal and mechanical tests.Each laser diode module is individually serialised for traceability and is shippedwith a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case -20 70Operating Chip Temp. °C TOP, chip 20 30Soldering Temp. (max. 10 sec) °C - - 260LD Forward Current mA IOP - 500LD Forward Current A IP (Pulse 200ns/Period 30µsec) - 2.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm HI 1060 25 -

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power (1055nm) mW LU1055M200 POP 200 - -Kink Free (1) Power mW at 25°C PK - 1.2*POP -Operating Current (2) mA POP = 150mW IOP - 430 480Threshold Current mA - Ith - 50 100Forward Voltage V at IOP VOP - 1.57 1.85Peak Wavelength nm - λpeak 1050 1055 1060Spectral Width (FWHM) nm at POP ∆λ - 2 -Optical Power Stability nm at IOP, t = 60 sec POP/t - - 0.5Polarisation: ex Facet From Chip dB TEM00 - 40 - -Spectral Shift With Temp. nm/°C - λ/T - 0.3 -Side Mode Suppression dB at POP, with FBG - -20 - -Pulsed OperationPeak Power W 10kHz, 0.2 µsec - 1 - -

W 10kHz, 0.1µsec - 2 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor B Constant K - B 3850 3892 3900Fibre SpecificationsFibre Type HI 1060, singlemode (PM Fibre HB0980T on request)Cut-Off Wavelength - - - - 920nm -Core Diameter (MFD) - - - - 4.7µm -Outer Diameter - - - - 250µm -Numeric Aperture - - NA - 0.14 -

(1) Kink-free is defined as ldL/dl - <dL/dl> | <0.2, where <dL/dl> is the average slope efficiency below kink(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power. (3) l P95 is defined as 95% of total spectral power



-FBG


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Pump Laser Module, UncooledLU0980M200-2

• Up to 200mW operation power• Wavelength 974 - 985nm• High-coupled rated output power• Fibre Bragg Grating for wavelength stability• Photodetector back-facet monitor• Singlemode fibre pigtail• Telcordia GR-468-CORE ongoing• Very low power consumption

The Lumics LU980M200-2 laser diode module contains an optimisedGaAs / AlGaAs / InGaAs quantum well high power laser. It has beenspecifically designed for applications in the low noise high powerErbium Doped Fibre Amplifiers (EDFA). The extremely stringent reliability requirements are achieved through our patent pendinginnovative technology. This includes careful design, exactly definedmanufacturing and extensive testing. The qualification contains a setof optoelectronic, thermal and mechanical tests. Each laser diodemodule is individually serialised for traceability and is shipped with a specified set of test data. Reliability tests according to TelcordiaGR-468-CORE are ongoing at present.

Operating ParametersMinimum Kink Kink Free

Operating Power Maximum Operating Free Power CurrentProduct Code Pop (mW) Current Iop (mA) (2) Pk (mW) (1) lk (mA) (1)

LU0980M110 110 290 132 348LU0980M120 120 310 144 372LU0980M130 130 330 156 396LU0980M140 140 350 168 420LU0980M150 150 370 180 444LU980M160 160 390 192 468LU980M170 170 410 204 492LU0980M180 180 430 216 516LU0980M190 190 450 228 540LU0980M200 200 470 240 564

Characteristics: (Tcase = 0 to 70°C)Parameter Conditions Symbol Min. Typ. Max.Threshold Current mA @0°C Ith - 40 60

@25°C - - 40 60@70°C - - 56 75

LD Operating Voltage V 0 - 70°C Vop - - 1.7Centre Wavelength (lc) nm 0 - 70°C (FBG) λ 974 977 985Spectral Width (DlFWHM) nm - λ - 0.5 2Side Mode Suppression Ratio dB - - 20 - -Power-In-Band % (Integration band ±1.5nm) - 90 - -Photodetector Dark Current (ID) nA VR = 5V, Tcase - - 5 40Photodetector Responsivity / dlp / dP) µA/mW - - 3.0 5.0 30.0Thermistor Resistance (Rth) KΩ Tsubmount = 25°C - 9.5 - 10.5Total Power Consumption mW Pop = 200mW BOL - - 680 800

Pop = 200mW EOL - - 815 960Pop = 110mW BOL - - 400 500Pop = 110mW EOL - - 480 600

Fibre Type (Corning HI1060 / PM980) Singlemode FibreFibre Bend Radius mm - - 25 - -Pigtail Length After Grating m - - 0.5 - -Module To Grating Distance m - - 1 - 2

Important Notes:(1) kink-free is defined as ldL/dl - <dL/dl>| <0.2, where <dL/dl> is the average slope efficiency below kink. The module is kink free

(at least) up to a minimum kink-free power Pk that the module will achieve at a device-specific current, the kink-free current lk. The individual value of lk is noted on the hardcopy of the test report shipped with the device. All values of lk are limited by valueslisted in Table “Absolute Maximum Ratings”.

(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from averagebetween 20mW and 120% of maximum operating power Pop. The maximum operating power Pop will be achieved at a device-specificcurrent, the maximum operating current Iop. The individual value of Iop is noted on the hardcopy of the test report shipped with the device. All values of Iop are limited by the values listed in table “Absolute Maximum Ratings”. The pump laser shall never be operatedat a power higher than the maximum operating current Iop that is noted in the test report shipped with the device. At Begin Of Life

(BOL), the operating current shall never be higher than the maximum operating current Iop that is noted in the test report shipped with the device. At End Of Life (EOL), the operating current shall never be higher than the device-specific kink free current lk that is noted in the test report.

(3) lP95 is defined as 95% of total spectral power.

Absolute Maximum Ratings: Tcase = 0 To 70°CParameter Symbol Min. Max.Storage Temp. °C Tmax -40 85Operating Case Temp. °C Top, case 0 70Lead Soldering Temp. °C - - 260(max. 10sec)LD Forward Current mA IF, max - 650LD Reverse Voltage V VR, max - 2ESD Damage V - - 500

Note: Absolute Maximum Ratings may be applied to the laser module for short periods of time only. Exposure to maximum ratings for extended period of time or exposure above one or more max ratings may cause damage or affect the reliability of the device.

Pin Connection1 Thermistor2 Package Ground3 Thermistor4 Photodiode (-)5 Photodiode (+)6 Laser Diode (-)7 Laser Diode (+)8 Not Connected

Pin Connections

4 3 2 1

5 6 7 8

Dimensions (mm)

12.7 +0.2-0.2

7.37

+0.

2-0

.2

15

2.6

0.5

2.54

1.3

5.2

5.0

3.5

30 1500

FBG

FBG

No. 4 No. 1

No. 5 No. 8

2.8

+0.

2-0

.2

7.62 +0.20-0.20

0.25

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Pump Laser Module FBG Stabilised

LU0980M330

• Up to 330mW power• Wavelength 972 - 985nm• High kink-free power up to 400mW• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilised

The Lumics LU0980M330 laser diode module contains an optimisedGaAs / AlGaAs / InGaAs quantum well high power laser. It has beenspecifically designed for applications in low noise high power ErbiumDoped Fibre Amplifiers (EDFA). The extremely stringent reliabilityrequirements are achieved through the Lumics patent innovative technology. This includes careful design, exactly defined manufacturingand extensive testing. The qualification contains a set of optoelectronic,thermal and mechanical tests. Each laser diode module is individuallyserialised for traceability and is shipped with a specified set of test data.

Reliability tests according to Telcordia GR-468-CORE are ongoing at present.


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0.2

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Operating ParametersMaximum Maximum Minimum Kink Kink Free

Operating Power Operating Current Free Power CurrentProduct Code Pop (mW) Iop (mA) (2) Pk (mA) (1) lk (mA) (1)

LU0980M250 250 510 300 612LU0980M260 260 520 312 624LU0980M270 270 530 324 636LU0980M280 280 540 336 648LU0980M290 290 550 348 660LU0980M300 300 560 360 672LU0980M310 310 570 372 684LU0980M320 320 580 384 696LU0980M330 330 590 396 708

CharacteristicsParameter Conditions Symbol Min Typ MaxThreshold Current mA - Ith - 45 56Forward Voltage V at Iop Vop - 1.7 1.8Peak Wavelength nm as specified ±2nm λpeak 972 980 985Spectral Width (3) (95% Power) nm at Pop, wth FBG λP95 - - 2Optical Power Stability % at Iop, t = 60sec Pop / t - - 0.5Spectral Shift With Temp. nm/°C FBG Temp. λ/T - - 0.02Side Mode Suppression dB at Pop, with FBG - -20 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current LU0980M250-270 A chip 25°C, case 70°C ITEC - 0.9 -

LU0980M280-330 A chip 25°C, case 70°C ITEC - 1.2 -TEC Voltage LU0980M250-270 V chip 25°C, case 70°C VTEC - 2.1 -

LU0980M280-330 V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor Constant K - B 3850 3892 3900Fibre Type HI 1060, SinglemodeImportant Notes:(1) kink-free is defined as ldL/dl - <dL/dl>| <0.2, where <dL/dl> is the average slope efficiency below kink. The module is kink free

(at least) up to a minimum kink-free power Pk that the module will achieve at a device-specific current, the kink-free current lk. The individual value of lk is noted on the hardcopy of the test report shipped with the device. All values are limited by values listed in Table “Absolute Maximum Ratings”.

(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrese by more than 20% from average between 20mW and 120% of maximum operating power Pop. The maximum operating power Pop will be achieved at a device-specific current, the maximum operating current Iop. The individual value of Iop is noted on the hardcopy of the test report shipped with the device. All values of Iop are limited by the values listed in the table “Absolute Maximum Ratings”. The pump laser shall never be operated at apower higher than the maximum operating power Pop throughout its lifetime. At Begin Of Life (BOL), the operating curent shall never be higher than the device-specific maximum operating current Iop that is noted in the test report shipped with the device. At End Of Life (EOL), the operating current shall never be higher than the device-specific kink free current lk that is noted in the test report.

(3) lP95 is defined as 95% of total spectral power(4) Please avoid rapid TEC on/off switching

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C Top, case -20 70Operating Chip Temp. °C Top, chip 20 30Lead Soldering Temp.

(max 10sec) °C - - 260LD Forward Current mA IF, max - 700LD Reverse Voltage V VR, max - 0.3TEC Current

LU0980M250-270 A ITEC - 1.8LU0980M280-330 A ITEC - 3.2

TEC Voltage LU0980M250-270 V VTEC - 3.2LU0980M270-330 V VTEC - 3.5

ESD Damage V - - 500Fibre Pigtail

Bend Radius mm - 25 -Note: Absolute Maximum Ratings may be applied to the lasermodule for short periods of time only. Exposure to maximumratings for extended period of time or exposure above one ormore max ratings may cause damage or affect the reliability of the device.

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1032nm Laser Module FBG StabilisedLU1032M150

• Wavelength 1032nm• High kink-free power• Proven reliability for high power operation• Cooled 14-pin package• Very powerful chip design• Singlemode fibre pigtail• Fibre Bragg Grating stabilised

The Lumics LU1032M150 laser diode module contains an optimised GaAs substratebased quantum well high power laser. It has been designed for customer specificapplications and is available with special FBGs and fires. The extremely stringentreliability requirements are achieved through our patent pending innovative technology.This includes careful design, exactly defined manufacturing and extensive testing. Thequalification contains a set of optoelectronic, thermal and mechanical tests. Each laser diodemodule is individually serialised for traceability and is shipped with a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, max -20 70Operating Chip Temp. °C TOP, chip 20 30Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IOP - 500LD Forward Current A IP (Pulse 200ns/Period 30µsec) - 2.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm HI 1060 25 -

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power (1032nm) mW LU1032M150 POP 150 - -Kink Free (1) Power mW at 25°C PK - 1.2*POP -Operating Current (2) mA POP = 150mW IOP - 380 400Threshold Current mA - Ith - - 100Forward Voltage V at IOP VOP - 1.6 2.0Peak Wavelength nm - λpeak 1027 1032 1037Spectral Width (FWHM) nm at POP, with FBG ∆λ - - 1Optical Power Stability % at IOP, t = 60 sec POP / t - - 0.5Polarisation: ex Facet From Chip dB TEM00 - 40 - -Spectral Shift With Temp nm/°C FBG Temp. λ/T - - 0.02Side Mode Suppression dB at POP, with FBG - -20 - -Pulsed OperationPeak Power W 10kHz, 0.2µsec - 1 - -

W 10kHz, 0.1µsec - 2 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor B Constant K - B 3850 3892 3900Fibre SpecificationsFibre Type HI 1060, singlemode (PM Fibre HB980T on request)Cut-Off Wavelength - - - - 920nm -Core Diameter (MFD) - - - - 4.7µm -Outer Diameter - - - - 250µm -Numeric Aperture - - NA - 0.14 -

(1) Kink-free is defined as ldL/dl - <dL/dl> | <0.2, where <dL/dl> is the average slope efficiency below kink.(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power. (3) λ P95 is defined as 95% of total spectral power


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The Lumics LU1064M150 laser diode module contains an optimised GaAs substratebased quantum well high power laser. It has been designed for customer specificapplications and is available with special FBGs and fibres. The extremely stringentreliability requirements are achieved through our patent pending innovative technology.This includes careful design, exactly defined manufacturing and extensive testing.The qualification contains a set of optoelectronic, thermal and mechanical tests.Each laser diode module is individually serialised for traceability and is shippedwith a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case -20 70Operating Chip Temp. °C TOP, chip 20 30Soldering Temp. (max 10sec) °C - 260 -LD Forward Current mA IOP - 500LD Forward Current A IP - 2.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm HI 1060 - 25

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power (1064nm) mW LU1064M150 POP 150 - -Kink Free (1) Power mW at 25°C PK - 1.2* POP -Operating Current (2) mA POP = 150mW IOP - 350 390Threshold Current mA - Ith - - 100Forward Voltage V at IOP VOP - 1.52 1.65Peak Wavelength nm peak λ 1059 1064 1069Spectral Width (FWHM) nm at POP, with FBG ∆λ - - 1Optical Power Stability % at IOP, t=60 sec POP/t - - 0.5Polarisation: ex Facet From Chip dB TEM00 - 40 - -Spectral Shift With Temp. nm/°C FBG Temp. λ/T - - 0.02Side Mode Suppression dB at POP, with FBG - -20 - -Pulsed OperationPeak Power W 10kHz, 0.2µsec - 1 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor B Constant K - B 3850 3892 3900Fibre SpecificationsFibre Type HI 1060, singlemode (PM Fibre HB980T on request)

(1) Kink-free is defined as ldL/dl - <dL/dl> | <0.2, where <dL/dl> is the average slope efficiency below kink(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power (3) λ P95 is defined as 95% of total spectral power



-FBG


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The Lumics LU1080M150 laser diode module contains an optimisedGaAs substrate based quantum well high power laser. It has beendesigned for customer specific applications and is available with special FBGs and fibres. The extremely stringent reliability requirementsare achieved through our patent pending innovative technology. Thisincludes careful design, exactly defined manufacturing and extensivetesting. The qualification contains a set of optoelectronic, thermaland mechanical tests. Each laser diode module is individually serialisedfor traceability and is shipped with a specified set of test data.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case -20 70Operating Chip Temp. °C TOP, chip 20 30Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IOP - 500LD Forward Current A IP (Pulse 200ns/Period 30µsec) - 2.0LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm HI 1060 - 25

CharacteristicsParameter Code / Conditions Symbol Min Typ MaxOperating Power mW - POP 150 - -Kink Free (1) Power mW at 25°C PK - 1.2*POP -Operating Current (2) mA POP = 150mW IOP - 300 350Threshold Current mA - Ith - - 100Forward Voltage V at IOP VOP - 1.65 2.0Peak Wavelength nm - λpeak 1078 1080 1082Spectral Width (FWHM) (3) nm at POP, with FBG ∆λ - - 1Optical Power Stability % at IOP, t = 60 sec POP/t - - 0.5Polarisation: ex Facet From Chip dB TEM00 - 40 - -Spectral Shift With Temp dB FBG Temp λ/T - - 0.02Side Mode Suppression dB at POP, with FBG - -20 - -Pulsed OperationPeak Power W 10kHz, 0.2µsec - 1 - -

W 10kHz, 0.1µsec - 2 - -Monitor Responsivity µA/mW - R 1 3 20Monitor Dark Current nA - - - 5 40TEC Current A chip 25°C, case 70°C ITEC - 0.8 -TEC Voltage V chip 25°C, case 70°C VTEC - 2.1 -Thermistor Resistance kOhm T = 25°C Rth 9.5 10 10.5Thermistor B Constant K - B 3850 3892 3900Fibre SpecificationsFibre Type HI 1060, Singlemode

(1) Kink-free is defined as ldL/dl - <dL/dl> | <0.2, where <dL/dl> is the average slope efficiency below kink.(2) Operating current (power) is the maximum current (power) where the slope efficiency does not decrease by more than 20% from average between

1.8x - 3.0x threshold to 120% of the maximum rated output power. (3) λ P95 is defined as 95% of total spectral power



-FBG

0.2

26.0

30.0

20.83

6 x 2.54 0.5

15.2

12.7

8.9

7.70

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. 13

Dimensions (mm)


7 6 5 4 3 2 1

8 9 10 11 12 13 14

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Laser Diodes MM NIR >1000mW


Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Temp. °C TOP, max -20 70Soldering Temp. (max. 10sec) °C - - 260LD Forward Current mA IF, max - 400LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 1.8TEC Voltage V VTEC - 3.2ESD Damage V - - 500Fibre Pigtail Bend Radius mm - 25 -

Electrical and Optical Characteristics (at 808nm, 25°C and Begin of Life (BOL)):Parameter Conditions Min Typ MaxCW Output Power (808nm) W - 1.0 1.2 -Peak Wavelength nm as specified 800 808 813Spectral Width (FWHM) nm - - 2 4Threshold Current A - - 0.4 0.6Operating Current A - - 2 2.7Operating Voltage V - - 2.2 2.5

Fibre Core Diameter µm - - 105 -Fibre Numerical Aperture - - - 0.22 -Fibre Cladding Diameter µm - - 125 -Connector Type - - - FCPC -TE-Cooler Current A - - - 3.3TE-Cooler Voltage V - - - 3.1Thermistor Type - - - NTC -

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

2.5

2.0

1.5

1.0

0.5

0.0

Current (A)

Voltage

PowerOut

put

Pow

er (

mW

)

Voltage (V

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Pump Laser ModuleLU0808M012

• Up to 1.2W operation power• Wavelength 808nm• Multimode fibre pigtail• High coupling efficiency• Internal TE-cooler• Compact, hermetically sealed package• Available in volume• MTTF > 10,000h

Main Markets:• Pumping (Er+, Yb+)• Plastics welding• Marking• Medical laser treatment• Illuminations

The LU0808M012 series offers an optical power of 1.2W from a100µm N.A. 0.22 fibre. This performance makes them a valuabletool for the highly efficient pumping of high power fibre amplifiers,fibre lasers and solid state lasers. Further important applications are micro material processing with exceptional power densities, illumination and medical lasers.

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• Up to 1.7W operation power• Wavelength 975nm• Multimode fibre pigtail• High coupling efficiency• Internal TE-cooler• Direct modulation up to 500kHz• Compact, hermetically sealed package• Available in volume• MTTF > 10,000h


The LU 0975M017 series offers an optical power of 1.7W from a100µm N.A. 0.22 fibre. This performance makes them a valuabletool for the highly efficient pumping of high power fibre amplifiers,fibre lasers and solid state lasers. Further important applications are micro material processing with exceptional power densities, illumination and medical lasers.

CharacteristicsParameter Code / Conditions Min Typ MaxCW Output Power (975nm) W - - 1.7 -Peak Wavelength nm as specified 970 975 985Spectral Width (FWHM) nm - - 3 6Threshold Current mA - - 245 350Operating Current A - - 3 3.3Operating Voltage V - - 2 2.2Connector Type (Optional) - - - FC/PC -TE-Cooler Current A - - - 4TE-Cooler Voltage V - - - 3Thermistor Type - - - NTC -Thermistor Resistance kOhm T = 25°C - 10 -Thermistor Energy Constant K - - 3988 -Fibre SpecificationsType µm AFS 105/125 Y - - -Fibre Core Diameter µm - - 105 -Fibre Numerical Aperture - - - 0.22 -Fibre Cladding Diameter µm - - 125 -Fibre Buffer Diameter µm - - 240 -Min. Bend Radius mm Short term / long term 25/50 - -

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case 0 35Operating Chip Temp. °C TOP, chip 20 25LD Forward Current mA IOP - 3.3LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 7TEC Voltage V VTEC - 3.6

2.00

1.60

1.20

0.80

0.40

0.000 1 2 3

2.00

1.60

1.20

0.80

0.40

0.00

Current (A)

Voltage

PowerPow

er (

W) V

oltage (V)


7 6 5 4 3 2 1

8 9 10 11 12 13 14

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections

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• Wavelength 975nm• Multimode fibre pigtail• High coupling efficiency• Internal TE-cooler• Direct modulation up to 500kHz• Compact, hermetically sealed package• Available in volume• MTTF > 10,000h


The LU0975M017 series offers an optical power of 2.5W from a105µm core, N.A. 0.22 multimode fibre. This performance makesthem a valuable tool for the highly efficient pumping of high powerfibre amplifiers, fibre lasers and solid state lasers. Further importantapplications are micro material processing with exceptional powerdensities, illumination and medical lasers.

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C TOP, case 0 35Operating Chip Temp. °C TOP, chip 20 25LD Forward Current A IOP - 4.7LD Reverse Voltage V VR, max - 0.3Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 7TEC Voltage V VTEC - 3.6

CharacteristicsParameter Symbol Min Typ MaxCW Output Power (975nm) W - 2.5 - -Peak Wavelength nm as specified 970 975 985Spectral Width (FWHM) nm - - 4 8Threshold Current mA - - 245 350Operating Current A - - 4.3 4.7Operating Voltage V - - 2.4 2.8Connector Type (Optional) - - - FC/PC -TE-Cooler Current A - - - 5TE-Cooler Voltage V - - - 3.2Thermistor Type - - - NTC -Thermistor Resistance kOhm T = 25°C - 10 -Thermistor Energy Constant K - - 3988 -Fibre SpecificationsType - AFS 105/125 Y - - -Fibre Core Diameter µm - - 105 -Fibre Numerical Aperture - - - 0.22 -Fibre Cladding Diameter µm - - 125 -Fibre Buffer Diameter µm - - 240 -Min. Bend Radius mm Short term / long term 25 / 50 - -

2.5

2.0

1.5

1.0

0.5

0.00.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Current (A)

Voltage

Poweroutp

ut P

ower

(W

)

Voltage (V

)


7 6 5 4 3 2 1

8 9 10 11 12 13 14

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections

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Pump Laser Module LU0975M040

• Up to 4W Operation Power• Wavelength 975nm• Multimode fibre pigtail• High coupling efficiency• Internal TE-cooler• Direct modulation up to 500kHz• Compact, hermetically sealed package• Available in volume• MTTF > 10,000h

Main markets:• Pumping (Er+, Yb+)• Plastics welding• Marking• Medical laser treatment• Illuminations

The LU0975M040 series offers an optical power of 4W from a105µm core, N.A. 0.22 multimode fibre. This performance makesthem a valuable tool for the highly efficient pumping of high powerfibre amplifiers, fibre lasers and solid state lasers. Further importantapplications are micro material processing with exceptional powerdensities, illumination and medical lasers.

Pin Function Pin Function1 Cooler (+) 8 NC2 Thermistor 9 NC3 PD Anode (-) 10 LD Anode (+)4 PD Cathode (+) 11 LD Cathode (-)5 Thermistor 12 NC6 NC 13 Case Ground7 NC 14 Cooler (-)

7 6 5 4 3 2 1

8 9 10 11 12 13 14

0.2

26.0

30.0

20.83

6 x 2.54

min. 1800

0.5

15.2

12.7

8.9

7.70

5.10

5.40

min

. 13

Dimensions (mm)

Pin Connections

Electrical And Optical Characteristics (At 975nm, 25°C and Begin Of LIfe (BOL))Parameter Conditions Min Typ MaxCW Output Power (975nm) W - 4.0 - -Peak Wavelength nm as specified 970 975 985Spectral Width (FWHM) nm - - 4 8Threshold Current mA - - 245 400Operating Current A - - 6.5 7.0Operating Voltage V - - 3.2 3.5Connector Type (Optional) - - - 6.5 7.0TE-Cooler Current A - - 3.0 3.5TE-Cooler Voltage V - - 1.5 2.0Thermistor Type - - - NTC -Thermistor Resistance kOhm T = 25°C - 10 -Thermistor Energy Constant K - - 3988 -Heat Resistance LD to BTF Base Plate K/W RH - 3.6 -Fibre SpecificationsType AFS 105/125 YFibre Core Diameter µm - - 105 -Fibre Numerical Aperture - - - 0.22 -Fibre Cladding Diameter µm - - 125 -Fibre Buffer Diameter µm - - 240 -Min. Bend Radius mm Short term / long term 25 / 50 - -

Absolute Maximum RatingsParameter Symbol Min MaxStorage Temp. °C Tmax -40 85Operating Case Temp. °C Top, case 0 50Operating Thermistor Temp. °C Top, th 0 46LD Forward Current A Iop - 7.0LD Reverse Voltage V VR, max - 2.0Monitor Forward Current mA IF, PD - 5Monitor Reverse Voltage V VR, PD - 20TEC Current A ITEC - 7TEC Voltage V VTEC - 3.6Heat Resistance

To Heat Sink K/W RH - 0.6

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Laser Diodes Drivers Low Power Laser Diode and TEC Drivers


aser diodes are extremely susceptible to catastrophicdamage from mains voltage transients, spikes and

static electricity. As a result, only laser diode controllersthat provide adequate protection should be used.

L

All of the Profile laser diode drivers provide the highest levels of filtering, ensuring that the lifetime of the device is maximised. Furthermore, when used with the Profile range of mounts and cables, the system performance provides the lowest noise and highest stability and accuracy currently commerciallyavailable. For further information on the Profile range of controllers, ask for the Profile catalogue from Laser 2000. Controllers are available as standalone mains operated units, or in Eurocard formats for budget applications and oemapplications. Standalone units are available with current outputs ranging from100mA (max) to 100s of Amps. Controllers are provided with separate control foreither the laser diode drive current or for the TEC current. Additionally, the 500series (and higher) provides dual output, one for laser current and one for TECcurrent. The 300 series (and higher) is available with optional IEEE and RS232interfaces for remote operation. LabView™ and LabWindows™ drivers areprovided with every compatible system.

Laser Diode Drivers and Mounts for Single Emitters

Laser Diode On / Off Switch

Output Power /Drive CurrentAdjustment

ConstantCurrent Mode

Selection Switch

Constant PowerSelection Switch

IEC Mains InputConnector

9 Pin D SubConnector toLaser Diode

Mains On / OffSwitch

Modulation InputConnector (BNC)

Drive CurrentMonitor Output

(BNC)

Local / IEEEControl

SelectionSwitch

On / OffKey Switch

ModulationInput (BNC)

Drive CurrentMonitor Output

(BNC)

DisplaySelectionSwitches

ExternalPhotodiode

Input TemperatureWindow

Control Input


Pre - SetConfiguration

Selection

GPIBAddressSelection

GPIB Interface(Optional)

Laser Diode and Photodiode

Polarity SelectionSwitch

Photodiode BiasSelection Switch

Laser DiodeOn / Off Button

Constant Current, Rangeand Constant Power

Selection Switch

Laser Diode Control Temperature (TEC) Control200 Series 300 Series 200 Series 300 Series

LDC201 LDC202 LDC210 LDC220 LDC340 TED 200 TED 350Laser Diode Drive SpecificationsDrive Current (max) A 0.1 0.2 1 2 4 - -Compliance Voltage (max) V >2.5 >6 >4 >4 >6 - -Transients mA <0.05 <0.2 <1 <2 <4 - -Noise (10Hz - 10MHz, RMS) µA <0.2 <1.5 <5 <15 <10 - -Setting Resolution µA 10 10 100 100 1000 - -Measurement Accuracy ±mA <0.05 <0.1 <1 <2 <4 - -Thermo-Electric Drive SpecificationsTEC Drive Current (max) A - - - - - 2 5TEC Compliance Voltage (max) V - - - - - >6 >8Noise (10Hz - 10MHz, RMS) mA - - - - - <1 <2Setting Resolution (with IC sensor) °C - - - - - 0.01 0.01Measurement Accuracy (with IC sensor) ±°C - - - - - 0.1 0.1Temperature Stability (with IC sensor) °C - - - - - <0.001 <0.001

IEC MainsInput Connector

200 Series 300 Series

Manual Controllers - 200 / 300 Series200 / 300 Series

The laser diode controllers of the LDC 200 series feature extremely low noisevalues and high stability. You can select among four models with different currentranges: The ultra low noise LDC 201 ULN provides extremely low noise lasercurrent up to 100mA due to carefully selected components. The 200mA version can drive all common laser diodes. The 1A and 2A current sources for morepowerful laser diodes also offer noise and ripple values that could previously only be reached with battery operated instruments.

The 200 series standalone units provide peak specifications at an entry-level price.They form the building block controller for the laboratory.

The 300 series unit provides a higher drive current (4A), than the 200 series and have the added option of remote GPIB control. This should be the first consideration when driving high power single emitters.

Display SelectionSwitches


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TemperatureTransducerSelection

On / Off Key Switch

PID LoopControl


15 Pin D SubConnector to Thermo- Electric Controller

TemperatureWindow

Control OutputPre - Set

ConfigurationSelection

GPIBInterface

GPIBAddressSelection

IEC MainsConnector

Mains VoltageRange Selection

DisplaySelection

Switch

Temperature ControlAdjustment

Polarity Configuration

Output Power / DriveCurrent Adjustment

Constant Current /Constant Power

Selection

Local / GPIBSelection Switch

ParameterSelection Keys

UnlockParameter Key

Local / RemoteSwitch Selection

AdjustParameter

On / Off KeySwitchModule Output

On / Off Module

SelectionSwitch

Return toPrevious Menu

ModuleBay

Manual and IEEE Controllers - 800 / 8000 Series

800 / 8000 Series (2/8 Slot Mainframes)

The modular design of the 800 / 8000 series by Profile enables a flexible adaptationto your special laser diode application. By choosing the appropriate single or multi-channel current and temperature modules, you may configure suitable laser diode controllers to meet the demands of many applications.

With its wide variety of modules the 800 / 8000 series is ideally suited to research,quality control and use in telecommunication as well as for the test of active components.

These modular units provide unlimited scope and are easily upgraded to performdifferent functions. They are the industry standard for laser test and burn-in systems.

800 / 8000 Series500 Series

Modules Max Drive Current (A) Laser Diode Drive Current Modules

LDC 8001 0.1LDC 8002 0.2LDC 8005 0.5LDC 8010 1LDC 8040 4LDC 8080 8

TEC Current Control ModulesTED 8020-16 2TED 8040-16 4TED 8080-16 8

Manual and IEEE Controllers - 500 Series

500 Series

The 500 series of laser diode drivers provide laser diode current control, and thermoelectric current control in one easy to operate standalone unit. In addition to the wide range of manual controls available for both laser diode control and TEC control, the 500 series may be fitted with an IEEE interface for remote controlof the unit or the laser diodes in use.

The specifications of the 500 series are as good as those found in the separateunits of the 200 and 300 series described opposite. The use of isolated optocouplerswithin the system allows exceptionally low noise performance to be achieved andmaintains the very high level of transient suppression typical of the Profile range of laser diode control systems.


MainframesPRO 8000 Mainframe 8 Channel MainframePRO 800 Mainframe 2 Channel Mainframe

Laser and TEC Control500 Series

ITC502 ITC510Laser Diode Drive SpecificationsDrive Current (max) A 0.2 1Compliance Voltage (max) V >6 >6Transients mA <0.2 <1Noise (10Hz - 10MHz, RMS) µA <1.5 <5Setting Resolution µA 10 100Measurement Accuracy ±mA 0.1 1Thermo-Electric Drive SpecificationsTEC Drive Current (max) A 2 4TEC Compliance Voltage (max) V >8 >8Noise (10Hz - 10MHz, RMS) mA <1 <2Setting Resolution (with IC sensor) °C 0.01 0.01Measurement Accuracy (with IC sensor) ±°C 0.1 0.1Temperature Stability (with IC sensor) °C <0.001 <0.001

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MANUALCONTROL

ONLY

CAB 400

CAB 420

CAB 400

CAB 420-15

CAB 400

CAB 420-15

CAB 400

CAB 420-15

IEEE(Option)

+MANUALCONTROL

IEEE(Standard)

+MANUALCONTROL

SeparateCurrent +

TemperatureControllers

CombinedCurrent +

Temp

LDH CD TC B

Suitable for 5.6 & 9mm cans

LDH HHL

Suitable for HHL

LDH DIL

Suitable for 14 Pin DIL

LDH BFY

Suitable for BFY

LDC 300 Series TED 350

ITC 500 Series

LDC 200 Series

Laser Driver Temp Controller Laser MountConnection Cable

TED 200

PRO 8000 SeriesPRO 800 Series

Laser Diode Mounts and ShieldedConnection Cables

LDH Series

The LDH series of laser diode mounts from Profileprovides the means of mounting any industry standard laser diode package, from TO can through to fibre pigtailed butterfly packages, easily and withoutrisk to the laser or photodiode chip. The mounts areprovided with either ZIF (zero insertion force) socketsor industry standard push-fit sockets. Each mount isdesigned to interface with any controller of the Profile range using shielded cables. This provides for the lowest noise and the highest performance in resolution and stability. It is also possible to use thesemounts without the Profile controllers. Laser 2000provides assistance and advice on how to configurethese mounts with alternative existing laser drive systems.

All Profile mounts have a built - in heatsink. The LDH CD TC B mount (for TO can lasers) also hasincorporated TEC and sensor elements. These elements are not generally required in the othermounts (as they are incorporated into the laser packages). Therefore, the remaining Profile mountsoffer connection to these elements.

Connection to the laser and the TEC are madethrough separate D connectors on the sides of themount. These D connectors are designed to be fullycompatible with the Profile range of shielded cablesand drive electronics. In addition, there is also thefacility to adjust the polarity of both the laser diodeand the photodiode independently of each other,allowing all types of laser diode polarity combinationsto be used with a single mount.

The LDH mounts also include protection for the laserdiode. This means that even with the power switchedoff and the mount disconnected from the shieldedcables, the laser diode still remains electrically isolatedfrom its environment.

To find out more about the Profile range of laser diodemounts and controllers, please contact Laser 2000and request your free copy of the Profile 2002 catalogue.

LDH Series

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Laser Diodes Drivers High Power and Array Drivers


Pulsed Diode Driver2900 Series

The model 2900 power supply unit is a microprocessor controlled autoranging unit configured for use with 240VAC single phase mains voltages. It is suitable for driving pulsed laser diodes from 0-200A at 300VDC with a pulse repetition frequency range in the region of 1-2000Hz. In addition to providing control of these parameters, the pulse duration is also completely adjustable over the range of 50µsec to 5msec. The 2900 is specifically designed for use with laser diode bararrays. The output current is carefully conditioned to prevent damage to the laserdiodes that would otherwise occur with lesser products.

Both manual and remote control is possible either via the front panel controls or via an RS232/485 interface. The unit combines complete control of laser diodes in the pump head and is interlocked for safe operation. In addition, the unit alsomonitors and protects the laser head from faults caused by diode array temperature,over current, over voltage and coolant flow.

It also integrates control of the Q-switch pulse source and the Q-switch RF driverfor further ease of use. Pulse synchronisation is also possible using the Q-switchpulse output and external Q-switch trigger inputs.

CW Diode Driver2800 Series

The model 2800 power supply unit is a microprocessor controlled autoranging unitconfigured for use with 240VAC single phase mains voltages. It is suitable for driving CW laser diodes from 0-40A at 300VDC and is specifically designed foruse with laser diode bar arrays. The 2800 is an integrated power supply with control electronics to deliver safe and comprehensive control of the output powerfrom high power laser diode systems. The output current is carefully conditioned to prevent damage to the laser diodes that would otherwise occur with lesser products.

Both manual and remote control is possible either via the front panel controls or via and RS232/485 interface. The unit combines complete control of the laserdiodes in the pump head and is interlocked for safe operation. In addition, the unit also monitors and protects the laser head from faults caused by diode arraytemperature, over current, over voltage and coolant flow.

It also integrates control of the Q-switch pulse source and the Q-switch RF driverfor further ease of use. Pulse synchronisation is also possible using the Q-switchpulse output and external Q-switch trigger inputs.

2800: Diode Driver

440

10 175

480

SHGTemperature

CoolantInterlock

RemoteInterlock

Q-Switch RFDrive Out

AnalogueCurrent CMD

CurrentMonitor

Out

External Q-SWTrigger

Q-SwitchSynch Out

LaserOutput

CommunicationsPort

AnalogueCurrent CMD

Int. / Ext.

On / Off /Remote Key

Switch

Stop / ResetButton

DriveCurrentDisplay

ElapsedTime

LaserActiveLED

CurrentSetpoint

ShutterOpen

RFFrequency

Switch

On / OffSwitch

StartButton

ShutterOpen /ClosedSwitch

FrequencyControl

Laser Fault Indicator LEDs:Coolant InterlockRemote InterlockArray OvertempDriver Overtemp

Driver Over VoltageDriver Over Current

RF Driver Fault

CurrentAdjust

2900: Pulsed Diode Driver

SHGTemperature

CoolantInterlock

RemoteInterlock

Q-Switch RFDrive Out

AnalogueCurrent CMD

CurrentMonitor

Out

External Q-SWTrigger

Q-SwitchSynch Out

CommunicationsPort

AnalogueCurrent CMD

Int. / Ext.

On / Off /Remote Key

Switch

Stop / ResetButton

Drive Current Display

LaserActiveLED

On / OffSwitch

StartButton

Laser Fault Indicator LEDs:Coolant InterlockRemote InterlockArray OvertempDriver Overtemp

Driver Over VoltageDriver Over Current

RF Driver FaultCurrentAdjust

Dimensions in mm

MainsInput

Product Capability 2900Output Current 0-200 AmpsDiode Bias Voltage 300 VDC maxPulse Repetition Rate 1-2000 HzPulse Duration 50 µsec-5 msecCooling Air

Product Capability 2800Output Current 0-40 AmpsDiode Bias Voltage 300 VDC maxAO Q-Switch Frequency 1 kHz-50 kHzCooling Air

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Laser Diodes Drivers High Power and Array Drivers


CW OEM Diode DriverLDD Series

The LDD series is a new family of OEM diode laser drivers designed for the emerginghigh power diode laser industry. The LDD series is ideal for high power OEM applications where economy is important and performance cannot be compromised.

Compact size is possible due to the low-loss Zero Voltage Switching inverter and incorporation of planar magnetics. The LDD is virtually wire free.

Leakage current is less than 250µA, power factor is greater than 0.99 and conducted emissions meet stringent European regulations. No additional line filter is required to meet EN 55011 emission requirements.

The LDD family has been designed with the knowledge that a high power diodelaser is an expensive device. Rise and fall times are strictly controlled to reducehigh voltage transients which could damage the laser diode.

Model Poutmax Output Current Input Voltage Size (L x W x H)LDD-250-XX 250W 10A to 60A 90-264VAC 190 x 147 x 63.5 mmLDD-400-XX* 400W Outputs available** 180-264VACLDD-600-XX 600W 10A to 80A 90-264VAC 251 x 183 x 63.5 mmLDD-1000-XX 1000W Outputs available** 90-264VAC 251 x 183 x 63.5 mmLDD-1500-XX* 1500W 180-264VACAuxiliary Outputs: +5V @1A

+15V @1A-15V @0.5A

* LDD-400 and LDD-1500 input voltage: 180-264VAC** Maximum compliance voltage determined by maximum rated powerOther outputs available upon request

LDD Interface with Auxiliary OutputsConnector Type: 15 pin D-sub FemalePin Description1,2 Enable: High = Run (pins 1 & 2 common)

High = 15V3 Interlock: Short to GND = Run

Open = OFF4 GND5 Vout Monitor: 10V = Vmax out6 Iout Monitor: 10V = Imax out7 Iprogram(+): 10V = Imax out8 N/C9 GND10,11 +5V @1.0A12 -15V @0.5A13,14 +15V @1.0A15 GND

Pulsed OEM Diode DriverLDD QCW Series

The LDDQCW series is a new family of OEM diode laser pulsars designed for the emerging high power diode laser industry. The LDDQCW series is ideal for high power applications where economy is important and performance cannot be compromised.

High efficiency is realised with circuitry that minimises losses across the outputpulsing circuit. Compact size is possible due to the low-loss Zero Voltage Switchinginverter and incorporation of planar magnetics. The LDDQCW is virtually wire free.

Leakage current is less than 250uA, power factor is greater than 0.99 and conducted emissions meet stringent European regulations. No additional line filter is required to meet EN 55011 emission requirements.

For advice on selecting laser diode drivers and mounts, please contact Laser 2000.

Parameter LDDCW LDDQCWI Pulse (max) A - 150 (Peak)I Ave. (max) A - 75V out (max) V - 40Pulse width sec 5msec to CW 50µsec to CWMax Rep Rate kHz 1 5Rise/Fall Time µsec 500 - 5000* 25Current Regulation % of max 0.1 <0.5Current Ripple % of max <0.5 <0.5Current Overshoot % of max <1 <5Operating Temp °C 0 to 40Storage Temp -20 to 85Humidity 0 - 90%Cooling Forced Air* Adjustable

CW Supplies

Model PoutAvg Output Input Size(see note 1) Current Voltage (L x W x H)

(see note 2)

LDDQCW-250-XX 250W 150Amax 90-264VAC 190 x 147 x 120 mmLDDQCW-600-XX 600W 150Amax 90-264VAC 251 x 183 x 121 mmLDDQCW-1000-XX 1000W 150Amax 180-264VAC 251 x 183 x 120 mmNote 1: Average Power must not exceed LDQCW ratingsNote 2: Output Current and voltage compliance can be configured for individual requirementsAuxiliary Outputs: +5V @1A

+15V @1A-15V @0.5A

Other power levels available upon request

QCW Supplies

LDD Series LDD QCW Series

Product Code DescriptionLDD-50 Laser diode driver, CW, 50W ratingLDD-150 Laser diode driver, CW, 150W ratingLDD-250 Laser diode driver, CW, 250W ratingLDD-400 Laser diode driver, CW, 400W ratingLDD-600 Laser diode driver, CW, 600W ratingLDD-1000 Laser diode driver, CW, 1000W ratingLDD-1500 Laser diode driver, CW, 1500W ratingRS232-LDD Laser diode driver, RS232 optionLDQCW-250 Laser diode driver, QCW, 250W ratingLDQCW-1000 Laser diode driver, QCW, 1000W rating

laser2000 diodes

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