jisoon ihm school of physics, seoul national university electrical switching in carbon nanotubes and...
TRANSCRIPT
Jisoon Ihm
School of Physics Seoul National University
Electrical Switching in Carbon Nanotubes and Conformational Transformation of C
hain Molecules
2006 8 30
Collaborators
bull Sangbong Lee Seungchul Kim Byoung Wook Jeong (Seoul Natrsquol Univ)
bull Young-Woo Son Marvin Cohen Steven Louie (Berkeley)
BasicsSubstitutional Impurity in Metallic Carbon Nanotubes
Boron or Nitrogen
Tube axis
Electronic Structure of Metallic Armchair Nanotube
Band structure of a (1010) single-wall nanotube ( LDA first-principles pseudopotential method )
VBM
CBM
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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-
Collaborators
bull Sangbong Lee Seungchul Kim Byoung Wook Jeong (Seoul Natrsquol Univ)
bull Young-Woo Son Marvin Cohen Steven Louie (Berkeley)
BasicsSubstitutional Impurity in Metallic Carbon Nanotubes
Boron or Nitrogen
Tube axis
Electronic Structure of Metallic Armchair Nanotube
Band structure of a (1010) single-wall nanotube ( LDA first-principles pseudopotential method )
VBM
CBM
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
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- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
BasicsSubstitutional Impurity in Metallic Carbon Nanotubes
Boron or Nitrogen
Tube axis
Electronic Structure of Metallic Armchair Nanotube
Band structure of a (1010) single-wall nanotube ( LDA first-principles pseudopotential method )
VBM
CBM
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Electronic Structure of Metallic Armchair Nanotube
Band structure of a (1010) single-wall nanotube ( LDA first-principles pseudopotential method )
VBM
CBM
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
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- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
VBM
CBM
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
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- Slide 36
- Slide 37
-
Tube axis
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
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- Slide 17
- Slide 18
- Slide 19
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- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Conductance with Boron Impurity
A
A
Similarity to acceptor states in semiconductors
HJ Choi et al PRL 84 2917(2000)
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Conductance with Nitrogen Impurity
Similarity to donor states in semiconductors
D
D
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
I Electrical switching in metallic carbon nanotubes
( Y-W Son J Ihm etc Phys Rev Lett 95 216602(2005) )
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
- Slide 16
- Slide 17
- Slide 18
- Slide 19
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- Slide 21
- Slide 22
- Slide 23
- Slide 24
- Slide 25
- Slide 26
- Slide 27
- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
bull Metallic and semiconducting carbon nanotubes are produced simultaneously
Selection Problem
bull Semiconducting nanotubes easy to change conductance using gate
bull Metallic nanotubes robust against impurities defects or external fffffffff fields (difficult to change conductance)
C
De
kke
r A
Z
ett
l1 Motivation
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
- Slide 16
- Slide 17
- Slide 18
- Slide 19
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- Slide 21
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Is it possible to control the conductance of metallic single-wall carbon nanotubes
Interplay between defects and electric fields
electron flow
SB
L
ee
A
Z
ett
l1 Motivations ndash contrsquod
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
- Slide 16
- Slide 17
- Slide 18
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- Slide 24
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- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
2 Calculational Method
SCattering-state appRoach for eLEctron Transport (SCARLET)
H J Choi et al PRB 59 2267(1999) and in preparation
Landauer formalism2
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
- Slide 14
- Slide 15
- Slide 16
- Slide 17
- Slide 18
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- Slide 20
- Slide 21
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- Slide 25
- Slide 26
- Slide 27
- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Nitrogen Boron
The electronic potential of N(B) is lowered Levels of quasibound states move down
The electronic potential of N(B) is raised Levels of quasibound states move up
3 B(N) doped (1010) SWNT
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
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- Slide 37
-
4 Switching in B-N codoped (1010) SWNT
N
B
bull Switching behavior offon ratio=607kΩ64kΩ~100
bull Maximum resistance depends on the relative position between N and B
bull Asymmetric resistance wrt the direction of Eext
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
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- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
∆H Eprop ext (diameter)2
5 Scaling for larger (nn) SWNT
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
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- Slide 35
- Slide 36
- Slide 37
-
6 Switching in (1010) SWNT with Vacancies
bull Four carbon atoms are removed (Strong repulsive potential)
bull Doubly degenerate quasibound states at fermi level
bull Switching behavior offon ratio=1200kΩ64kΩ ~200
bull Symmetric resistance wrt the direction of Eext
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
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- Slide 36
- Slide 37
-
6 Switching in (1010) with Vacancies ndash contrsquod
Quasibound states move up or down depending on the direction of Eext
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
- Slide 12
- Slide 13
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- Slide 16
- Slide 17
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- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Summary
bull Conductance of metallic CNTs with impurities and applied electric fields is studied
bull With N and B impurity atoms on opposite sides asymmetric switching is possible using external fields
bull With a large vacancy complex symmetric switching is possible using external fields
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
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- Slide 37
-
II Conformational Transform of Azobenzene Molecules
( B-Y Choi et al Phys Rev Lett 96 156106(2006) )
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
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- Slide 29
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- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Azobenzene (AB) C6H5-N=N-C6H5
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Transformation between transAB and cisAB
(Voltage bias using STM)
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Geometries of tAB
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
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- Slide 28
- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Geometries of cAB
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
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- Slide 36
- Slide 37
-
Optimal geometry of tAB and cAB
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
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- Slide 28
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- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
STS for tAB and cAB
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
- Slide 10
- Slide 11
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- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Disperse Orange 3 (NH2-C6H4-N=N-C6H4-NO2)
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
- Slide 7
- Slide 8
- Slide 9
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- Slide 11
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- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Flat geometry of cAB
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
- Slide 6
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- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Summary
bull Electrical pulse is found to induce molecular flip between trans and cis structures
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Example of MATERIAL DESIGN totalreflection by three nitrogen impurities
Doubly degenerate impurity states cause perfect reflection at 06 eV
(Both even and odd states are fully reflected at same energy)
Importance of geometric symmetry (equilateral triangle)
Appendix
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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- Slide 29
- Slide 30
- Slide 31
- Slide 32
- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
Difference between Eext and impurity potential U
Lippman-Schwinger formalism
Eigenstate |ψgt of Htot associated with the eigenstate |gt of H0 with the same energy E (with impurity potential U at site )
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
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-
Projection on to the impurity |gt
where
Reflection for the specific state |gt
Total transmission
Resonance condition
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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- Slide 31
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- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
With applied electric fields
Suppose ∆H at site α is ∆E
In other words is G0(αE) shifted by ∆E
G0 projected at site
Effect of Eext Greenrsquos function itself changes
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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- Slide 33
- Slide 34
- Slide 35
- Slide 36
- Slide 37
-
(1010) SWNT with single attractive impurity of U=-5|t|
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
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- Slide 37
-
(1010) SWNT with a single attractive impurity of U=-5|t| while changing Eext
EF
(1010) SWNT with NO Eext while changing the strength of the attractive potential U
Changing Eext is different from changing U
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
- Slide 4
- Slide 5
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- Slide 37
-
SAMSUNG SDI FED ndash 2005 -
Picture1
Picture
2
Picture3
Picture
4
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
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- Slide 37
-
Power consumption of SED LCD PDP (36in)
SED
LCD
PDP
Canon-Toshiba SED at CEATEC2004
- Slide 1
- Slide 2
- Slide 3
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- Slide 5
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-