introduction to chapter 12 digital information is easily stored commonly used memory devices and...
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Introduction to Chapter 12 Digital information is easily stored Commonly used memory devices and systems
will be examined Flip flops Registers VLSI and LSI memory devices
The difference between main memory and auxiliary memory
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-1 Memory Terminology Memory cell Memory word Byte Capacity Density Address Read operation Write operation
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-1 Memory Terminology Access time Volatile memory Random access memory (RAM) Sequential access memory (SAM) Read write memory (RWM) Read only memory (ROM) Static memory devices Dynamic memory devices Main memory Auxiliary memory
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-2 General Memory Operation Every memory system requires I/O lines to
provide the following functions Select memory address being accessed for R or W
operation Select either a R or W operation Supply input data to be stored during a W Hold output data from memory during a R Enable or disable memory so that it will or will
not respond to read/write commandsRonald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-2 General Memory Operation Address inputs R/W input Memory enable
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-3 CPU Memory Connections Main memory is interfaced to the CPU through:
address bus data bus control bus
Write operation process: CPU places the memory location address on the address
bus CPU places data to be stored on the data bus CPU activates the control signal for the W operation
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-3 CPU Memory Connections Memory ICs determine location for memory storage by
decoding the binary address Data on the data bus is transferred to selected memory
location Read operation process:
CPU places address of memory location for data retrieval on the address bus
CPU activates the control signal lines for the R operation Memory ICs determine location of data being retrieved Memory IC places data from the memory location onto the
data bus
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-3 CPU Memory Connections System bus functions:
Address bus – unidirectional, carries address outputs from CPU to memory
Data bus – bi-directional, carries data between CPU and memory ICs
Control bus – carries controls signals (such as R/W) from CPU to memory
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-4 Read Only memories Holds data that does not change, or changes
only infrequently Nonvolatile Applications include: cash registers,
appliances, and security systems
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-4 Read Only memories Address inputs Data outputs Control input(s) The read operation
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-5 ROM Architecture Four basic parts (Figure 12-7)
Register array – stores data programmed into the ROM Address decoders – determines which register will be
enabled by row and column Output buffers - pass data to the external data outputs
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-6 ROM Timing Typical timing for a ROM read operation:
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-7 Types of ROMs Mask programmed ROM (MROM)
Photographic “mask” establishes electrical interconnections
Economical only in high volume applications Programmable ROMs (PROMs)
Fusible links allow end users to program the device Can only be programmed once Economical for small volume applications
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-7 Types of ROMs Erasable programmable ROM (EPROM)
Can be erased and reprogrammed by user UV light is used to clear the device Entire device is cleared
Electrically erasable PROM (EEPROM) Voltage is used to clear memory Individual bytes can be erased
CD ROM Light is used to stores binary data Large quantities of data are economically stored
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-8 Flash Memory Allow rapid in-circuit reprogramming of individual
bytes The 28F256A CMOS flash memory IC
Control inputs determine what operation takes place Read command Setup erase/erase commands Erase verify command Setup program/program commands Program verify command
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-9 ROM Applications Embedded microcontroller program memory Data transfer and portability Bootstrap memory Data tables Data converter Function generator Auxiliary storage
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-10 Semiconductor RAM Random access memory – all memory
locations are equally accessible Used for temporary storage Fast read and write times are necessary RAM is volatile Many basic concepts that apply to ROM
apply to RAM as well
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-11 RAM Architecture Consider RAM as a number of registers, each
storing a single word and having a unique address
Read operation Write operation Chip select Common I/O pins
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-12 Static RAM (SRAM) Stores data as long as power is applied Available in bipolar, MOS and BiCMOS
variations Static RAM timing Read cycle Write cycle Actual SRAM chip – the MCM6264C
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-13 Dynamic RAM (DRAM) High capacity Low power requirement Moderate speed Small capacitors are used to store data Must be periodically refreshed Used for main internal memory in PCs or
MacsRonald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-14 Dynamic RAM Structure and Operation
An array of cells with unique row and column positions
Analysis of read and write operations using the simplified representation below:
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-14 Dynamic RAM Structure and Operation
Address multiplexing – each address pin can accommodate two different address bits
Operation of the TMS44100 4M X DRAM Address of memory by the CPU must be modified
for DRAM multiplexed addressing
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-15 DRAM Read/Write Cycles
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-15 DRAM Read/Write Cycles
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
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12-16 DRAM Refreshing When a read operation is performed on a cell, all of
the cells in the row will be refreshed Refresh control logic is used to make sure that each
row is refreshed within the time limit Refresh modes
Burst Distributed
Most common method used is RAS only refresh The DRAM controller
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-17 DRAM Technology Memory modules:
SIMM DIMM SODIMM RIMM
FPM DRAM EDO DRAM
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-17 DRAM Technology SDRAM DDRSDRAM SLDRAM DRDRAM
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-18 Expanding Word Size and Capacity Expanding word size Combining RAMs
At right two 16X4 RAMs are combined for a 16X8 module
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-18 Expanding Word Size and Capacity Expanding capacity Combining RAMs
At right two 16X4 chips are combined for a 32X4 memory
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-18 Expanding Word Size and Capacity Incomplete address decoding – useful when different
memory devices are used in the same system Combining DRAM chips – DRAM ICs with word
sizes of 1-4 bits must be combined to form larger word size modules
Figure 12-40 illustrates combining eight TMS44100 DRAM chips to form a 4M X 8 module
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-19 Special Memory Functions Special functions performed by memory
devices in various applications Power down storage
Critical operating parameters that will be applied when a system is powered up
Industrial process control systems that must retain memory of where they are in a process under all conditions.
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 9e
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12-19 Special Memory Functions Cache memory
High speed memory that communicates directly with the CPU
Level 1 cache is on CPU Level 2 cache is SRAM external to CPU
First in first out (FIFO) memory Useful as a buffer between systems with different data
rates Circular buffers
Allow data to “wrap around” when the buffer is full
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-20 Troubleshooting RAM Systems Faults in RAM can cause unreliable system
performance or “crashes” In order to determine if RAM is working properly
you must know how it normally operates The decoding logic can be tested using signal
injection, or by forcing a certain address onto the bus to obtain a known decoder output
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-20 Troubleshooting RAM Systems In order to test the complete RAM system, patterns
of 1s and 0s are written and read from each memory location
By alternating the patterns each bit can be checked for R/W of both 1s and 0s
Pattern checking does not catch all errors. There may be errors that occur only in certain patterns
A memory check is commonly run when a system is powered up
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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12-21 Testing ROM Test options include:
Printing out a listing of the memory contents Memory contents are compared to a reference
ROM Checksums may be used
A code based on the sum of the data words to be stored is checked against the actual value of the sum
This will not catch all errors, but if the checksums match, there is a high probability that the device is good
Ronald Tocci/Neal Widmer/Gregory MossDigital Systems: Principles and Applications, 10e
Copyright ©2007 by Pearson Education, Inc.Columbus, OH 43235
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