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INPHENIX

CIOE-2011

用于用于用于用于40G/100G系统的半导体光放大器研究系统的半导体光放大器研究系统的半导体光放大器研究系统的半导体光放大器研究

李同宁

September 7, 2011

Delivering Innovative Light Sources and Optical

Amplifiers for the Medical, Telecom and Sensor Markets

www.inphenix.com

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INPHENIX

CIOE-2011

• Introduction ( 背景介绍背景介绍背景介绍背景介绍））））

• SOA Design & Manufacture（（（（设计制造设计制造设计制造设计制造））））

• Applications（（（（应用应用应用应用））））

• Conclusion（（（（ 结论结论结论结论））））

Contents

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Introduction

� Standard IEEE P802.ba is 100GBASE-LR4

100Gb/s=25Gb/sx4,wavelengths:1295nm,1300 nm,1305 nm, 1310 nm for 10 km transmission.

� 100GBASE-ER4: Reach extension of 100GBASE-

LR4 to at least 40 km by using SOA

� ITU-T G.984.6

Gigabit-capable passive optical networks (GPON)

Reach extension by using SOA

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Introduction

40 km

SMF

100 G

25G

PIN

25G

PIN

25G

PIN

25G

PIN

25G

EML

25G

EML

25G

EML

25G

EML

1295 nm

1300 nm

1305 nm

1310 nm

M

U

X

D

E

M

U

X

S

O

A

Fig. 1 100 G (25 G × 4) Optical Transmission Configuration

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SOA Design

Special Active layer + Tilt-Waveguide+AR coating

P-clad

N-clad

Active layer

Input signal

Current

Output signal

Active layer

AR

coating

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SOA Design

Key Parameters to Characterize SOA

� Small Signal Gain (Gs)

� Gain Bandwidth

� Gain Ripple

� Saturation Output Power (Psat)

� Noise Figure (NF)

� Polarization Dependent Gain (PDG)

� Switching Time

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Wavelength

Amplitude

SOA Design

SOA 设计基本原则

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SOA Design

半导体能带结构

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SOA Design偏振无关的SOA设计

TE TM

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CIOE-2011

∂∂

Γ

−=

ng

wd

G

GhP

s

c

f

sat/

1

2

2ln

0

0

την

G0: Small-signal SOA gain

g: Material gain

L: Cavity length

d: Active layer thickness

w: Active region width

ν: Optical frequency

Γ: Active region optical confinement factor

τs: Carrier lifetime

dg/dn : Differential gain (with respect to carrier density n)

h: Planck constant

ηc: Chip-fiber coupling coefficient

SOA Technologies饱和输出功率 Psat

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SOA Design

F=(SNR)in/(SNR)out

噪声指数 F

1. Amplified Signal Shot Noise

2. Spontaneous Emission Shot Noise

3. Signal-spontaneous Beat Noise

4. Spontaneous-spontaneous beat noise

5. Intrinsic Internal Loss

6. Coupling Efficiency

( ) ( )22

2

2

112 fm

n

n

G

Gn

G

GGF t

in

sp

sp ∆−

+−

= χ

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MOCVD Wafer Test Chip Proc.

CoatingTestingSubmount

Burn-in Package Final Test

SOA Manufacture

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SOA Manufacture

-0.5

0

0.5

1

100 150 200 250 300

Injection Current (mA)

Ratio of TE/TM Power (dB)

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• Achieved Performance of 1300nm~1500nm SOA

– Bandwidth: 60nm ~ 100nm

– Gain: 20dB ~ 25dB

– Psat : 11dBm ~15dBm

– PDG: < 1dB

– NF : < 7dB

• Package Cost:

– 14 PIN BUT as Standard

– Integration: Hybrid and Monolithic

• Quality & Reliability:

– Inphenix’s SOAs are Telcordia qualified

SOA Manufacture

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1310nm SOA Life time test curve Accelerated Aging at 85 dgree

0.00%

10.00%

20.00%

30.00%

40.00%

50.00%

60.00%

70.00%

80.00%

90.00%

100.00%

110.00%

0 480 960 1440 1920 2400 2880 3360 3840 4320 4800

Aging Time (h)

Relative Power 1

2

3

4

5

6

7

SOA Manufacture

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Test Sample Size Test Status

Mechanical Shock 11 Passed

Vibration 11 Passed

Thermal Shock 11 Passed

Accelerated Aging 50 Passed

High Temperature Storage 11 Passed

Temperature Cycling (un-biased) 11 Passed

ESD Threshold 6 Passed

Fiber Pull 11 Passed

Solderability 11 Passed

Flammability from vendor

Life time for InP based devices > 530K hrs finished

Life time for GaAs based devices > 10K hrs In Accel. Aging proc.

Reliability & Environmental

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SOA Application

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Critical Specification in application:

1. Power booster : high Psat

2. In-line amplifier : high gain

3. Preamplifier: low noise figure

4. Modulator/ WL converter: fast rise/fall time

5. Switch/Logic gate: on/off ratio & extinguish ratio

Application Requests

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Application in 100G-RE

� Lower Noise Figure (NF) is required

� Higher saturation power (Psat)

� Gain flatness for multi-channel signals

Key Design Parameters of SOA for Reach Extension

1. 100 G Ethernet Applications

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Parameter Unit Value

Wavelength Range nm 1480 - 1500

Minimum Input Power at OLT Port dBm - 23

Minimum Optical gain dB 23

Minimum Optical Gain Ripple dB 2

Minimum Saturation Output Power dB 8

Maximum Noise Figure dB 9.5

Parameter Unit Value

Wavelength Range nm 1290 - 1320

Minimum Input Power at ONT Port dBm - 28

Minimum Optical gain dB 26

Minimum Optical Gain Ripple dB 4

Minimum Saturation Output Power dB 7

Maximum Noise Figure dB 8

Downstream

Upstream

Application in 100G-RE

2. GPON Reach Extension

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� The world-first live demonstration of 112 Gbit/s transmission

over 40 km single-mode fiber was conducted by Opnext

using an InPhenix 1310 nm Semiconductor Optical Amplifier

(SOA) during OFC 2011 held at the Los Angeles Convention

Center March 8-10.

� This realization is in compliance with 100 Gbit/s (4 channel x

25 Gbit/s) Ethernet applications (Standard IEEE 100GBASE-

ER4). The transmission distance, previously limited to only

10 km, has been extended successfully to 40 km by

integrating an Inphenix SOA as a pre-amplifier.

Application in 100G-RE

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Parameter

Unit

Min

Typ.

Max

Peak wavelength λp nm 1280 1300 1320

3 dB Optical Bandwidth nm 45

Small Signal Gain at λp dB 18 20

Operation Current mA 250

Gain Ripple dB 1

Saturation Output Power dBm 10

Polarization Dependent Gain dB 1

Noise Figure dB 7

Inphenix SOA in Opnext’s demonstration of 100 G system

Application in 100G-RE

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Transmitter SOA Receiver

4 wavelengths

× 25 Gb/s

Channel output

~ -1.4 dBm

Gain

~ 12 dB

Loss 6.3 dB

10 km

40 km

SM fiber

~ -7.7 dBm ~ - 19.4 dBm ~ - 7.4 dBm

Extra loss 11.7 dB

The extra transmission loss of 11.7 dB induced by

extending the fiber length from 10 km to 40 km which is compensated by the SOA gain of roughly 12 dB.

R. Arima et al., “Demonstration of World-First 103 Gbit/s Transmission over 40 km Single Mode Fiber by 1310 nm LAN-WDM Optical Transceiver for 100GBE”, OFC 2011, JWA9.

Application in 100G-RE

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SOA

25G

PIN

25G

PIN

25G

PIN

25G

PIN

1295 nm

1300 nm

1305 nm

1310 nm

1295 nm

1300 nm

1305 nm

1310 nm

DEMUX

Integrated Technology of SOA

Project: integration of SOA chip, Demultiplexer, and PDs in a PLC platform

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Integrated Technology of SOA

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•

Integrated Technology of SOA

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Integrated Technology of SOA

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Integrated Technology of SOA

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INPHENIX

CIOE-2011Fujitsu OWE2 OFCNFOEC 2008

Monolithically–integrated 8:1 SOA gate

Integrated Technology of SOA

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Conclusions

� SOA has a potential for significantly extending the

transmission distance of optical network systems, especially

for higher speed systems (40G/100G) and GPON

� Lower NF & high Psat and are key parameters for 1300nm SOA

applied in 40G /100G extension system

� Inphenix has designed and manufactured polarization

independent SOA for 40G/100G system

� Future work will focus on the integration of SOA chip, AWG, and

PD arrays in PLC platforms