innovative mask aligner lithography for mems … mask aligner lithography for mems and packaging 1...
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Dr. Reinhard Voelkel
CEO SUSS MicroOptics SA
September 9th, 2010
Innovative Mask Aligner Lithography for MEMS and Packaging
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SUSS Micro-Optics
SUSS MicroOptics is a leading supplier
for high-quality Micro-Optics and part
of SUSS MicroTec Group
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SUSS MicroOptics is “Preferred Supplier” for Carl Zeiss SMT AG providing Micro-Optics‟
components for Deep UV Illumination in ASML Lithography Systems.
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Micro-Optics in Front-End Lithography
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Diffractive Optical Elements (DOE)
MEMS (FlexRay™)
Customized Illumination
Excimer Laser (193nm)
Laser Beam Shaping
Laser Beam Homogenizing
Customized Illumination
Pupil Shaping (DOE)
Now: FlexRay™
programmable illumination
technology
Microlens
Homogenizer
Micro-Optics is Key Enabling Technology in
Front-End Lithography
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MEMS: Photolithography
Mask Aligners are the work horse of
SEMI industry since the very beginning
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SU
SS
Mic
roT
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A200 C
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pact
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Photolithography
Mask Aligners are used for MEMS,
Packaging and SEMI
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SU
SS
Mic
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A200 C
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pact
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Back End Lithography
Mask Aligners Lithography is „Shadow Printing“
Mask illumination using UV light
Resolution <=> proximity gap
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Wafer
Mask
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Photolithography
Mask Aligners are
• Mature technology
• Cost-effective
• Fast (high throughput)
• Service friendly
• Easy to use
• Convenient
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SU
SS
Mic
roT
ec M
A200 C
om
pact
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Challenge
BUT
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a Mask Aligner is
a Mask Aligner is
a Mask Aligner!
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Myth or Facts?
Reaching limits: Change to Projection?
Think twice, because– High capital investment
– High costs per wafer
– Change established processes
– Reduced focus budget
– Can„t print to the very edge of wafer...
Mask Aligners are so convenient!
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Mask Aligner Lithography
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Illumination makes
the difference!• Diffraction
• Partial Coherence
Parallel Light Apodization
Parallel Light Diffuse Light
CONTACT
GAP: 20 µm
GAP: 50 µm
GAP: 100 µm
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Micro-Optics is also Key Enabling
Technology for Mask Aligners!
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Fly„s Eye HomogenizerMicrolens Optical Integrator (Köhler )
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I(x)
x
I(x)
x
Flat-Top Intensity
Profile
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MO EXPOSURE OPTICSInnovative Illumination System for SUSS Mask Aligners
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Technology Backbone: Microlens Optical Integrators (Köhler)
Optical
Integrator (I)
Fourier LensƒFL
Fourier
PlaneOptical
Integrator (II)
Fourier
Lens
ƒFL
Fourier
Plane
Fla
t-top
inte
nsity
pro
file
Exchangable IIlumination Filter Plate (IFP)
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Patent pending
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MO Exposure Optics
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Microlens Array
Optical System MA 200
Library of
Illumination
Filter
Plates (IFP)
Microlens-based Optical Integrators
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Excellent UniformityIndependent of Lamp Position
Deviation from mean value in [%] for Ø200mm in
MA200 Compact
Lamp Position: Uncritical
Lamp Tilt: Uncritical
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Stabilize the Mask Aligner
FeaturesStable Light Source
Excellent Uniformity
Telecentric Illumination
BenefitsReduced Downtime
Improved CD Uniformity
Larger Process Window
Higher Yield
MO Integrator
MO Integrator
IFP Module
Micro-Optics Illumination
Filter Plate
MO Exposure Optics
Standard Mask Illumination Telecentric Mask Illumination
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Technology Enhancement
Microlens-based MO Exposure Optics
provides
• Stabilized light source
• Excellent light uniformity
• Telecentric illumination
in Mask Aligners
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Exchangeable Illumination Filter Plates
Features– HR to LGO change in less than 1 min
– Illumination filter plates (IFP)
– Customized illumination
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IFP-HR
„High Resolution“
IFP-LGO
„Large Gap“
IFP-C90
„More Light“
Exchangeable Illumination Filter Plate (IFP)
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Optimize DiffractionCustomized Illumination
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1.2µm thick resist (AZ 4110), 100µm Proximity Gap, SUSS MA8
Photomask Pattern
Square 10x10µm2
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Optimize DiffractionCustomized Illumination
Features– HR to LGO change in <1 min
– Illumination filter plates (IFP)
– Customized illumination
Benefits– Flexible illumination
– Diffraction reduction
– Resolution enhancement
technology (RET)
– Optimized lithography process
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HR: High Resolution LGO: Large Gap
Library of Illumination Filter Plates (IFP)
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Optical Proximity Correction (OPC)
Aerial image 6μm line
Proximity gap 40μm
Mask layouts (right)
OPC assist features (bottom)
Reduction of the rounding of
the inner and outer corner
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OPC assist
features
Mask
pattern
Aerial image (simulation)
Ref: Kristian Motzek, FhG-IISB, SUSS Report Sept 2010
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Optical Proximity Correction (OPC)
23Square10µm x 10µm, Proximity Gap 50µm, Photoresist AZ4110, 1.2um thick
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Expertise in Lithography Simulation
Lithography Simulation
Source-Mask Optimization Service
Research & Technology Partners
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Simulation 3D Resist Structure
(Layout Lab, GenISys)
Printed Resist Structure
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Source-Mask Optimization Service
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Example: LEDRequirements for PSS
Patterned Sapphire Substrate
– Epitaxy
– Effiency
– Beam Confinement
Process
– Hexagons/Cones, ≈ 3µm
– RIE-ICP (Chlorine) Etching
www.corial.net
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Example: LED Source-Mask Optimization
Optical Proximity Correction(Proximity Gap 30µm)
MO Talbot Lithography(Proximity Gap 102µm)
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MO Talbot LithographyPeriodic Structures (PSS)
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Pitch 5 µm
Resist 2 µm thick
Etching RIE (Bosch)
Silicon
Proximity Gap 102 µm
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MO Talbot LithographyPeriodic Structures (PSS)
Pitch 5 µm
Resist 2 µm thick
Etching RIE (Bosch) Silicon
Proximity Gap 102 µm
0.8 µm
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MEMSThick Photoresist (SU8)
Very thick photoresist
– Improvement of Footing
– Sidewall shaping
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Improvement of footing and sidewalls with
thick SU8 using MO Exposure Optics
300µm thick SU8
Resolution 25µm
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Example: ADP, TSV & 3D OPC Fresnel
Photoresist AZ1518, 5µm thick
11µm via
800µm proximity gap
Via shaping
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Side view
Top view
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Example: ADP, TSV & 3D OPC Fresnel
Resulting Aerial Image Depth of focus
(DOF)
Illumination Filter
Plates (IFP)
DOF
OPC Structure
(Fresnel-type)
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11µm via at 800 µm proximity gap
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Example: ADP, TSV & 3D OPC Fresnel
Benefits
– Very large proximity gap
– Via shaping possible
– Extended Depth of
Focus (DOF)
– Very short exposure
time (throughput)
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Gap Ø Via DOF
100 µm 2 µm 5 µm
200 µm 3 µm 15 µm
300 µm 5 µm 30 µm
400 µm 7 µm 60 µm
500 µm 10 µm 100 µm
700 µm 14 µm 200 µm
Typical parameters for via printing
using OPC Fresnel Technology
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MO Exposure OpticsAvailable for all SUSS Mask Aligners
MA300 Gen2
LithoPack 300
MA200Compact,
MA100e, MA150e
MA/BA8 Gen3
MA6, MA8
MJB4
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Advanced Mask Aligner Lithography
A Mask Aligner is a
Mask Aligner is a
Mask Aligner!
Yes! But...
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Stabilized light source
Uniform and
telecentric illumination
Customized illumination
Improved process stability
Process window enlargement
Yield improvement
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Technology Enhancement
MO Exposure Optics enables
• Customized Illumination
• Optical Proximity Correction (OPC)
• Source-Mask Optimization (SMO)
in SUSS Mask Aligners
Advanced Mask Aligner Lithography
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Summary
Quick wins
– Improved CD uniformity
– Higher throughput
– Less downtime
New process parameter: Illumination!
– Customized illumination
– Optical Proximity Correction (OPC)
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SUSS.
Our Solutions
Set Standards
SUSS MicroTec
SUSS MicroOptics
www.suss.com