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TRANSCRIPT
ICETACS 2013
978-1-4673-5250-5/13/$31.00 ©2013 IEEE
Analog Field Programmable CMOS Operational
Transconductance Amplifier (OTA)
G. Kapur
Department of Electronics & Communication National Institute of Technology
Shillong, Meghalaya, India [email protected]
S. Mittal
Department of Electrical Engineering Indian Institute of Technology
Kanpur, India
C.M. Markan
Department of Physics and Computer Science
Dayalbagh Educational Institute
Dayalbagh, Agra, India
V.P. Pyara
Department of Electrical Engineering
Dayalbagh Educational Institute
Dayalbagh, Agra, India
Abstract—This paper defines a approach to design the field
programmable CMOS Operational Transconductance Amplifier
(OTA). All the MOSFETs are replaced by the floating gate MOSFETs to make the OTA design programmable. The charge
at the floating gate can be programmed after fabrication, based
on Hot-e-injection and Fowler-Nordheim tunneling techniques
which results in threshold voltage variation which in turn can
modify circuit’s specifications. The high frequency small signal analysis of the design is prepared and specifications like output
current, Transconductance, input impedance, output impedance
and offsets of the design are re-derived in terms of threshold
voltages of the MOS FETs. In order to achieve circuits AC and DC characteristics, the circuit is simulated using BSIM3 level49
MOSFET models in T-spice 0.35um CMOS process. The
simulated results shows 13 bit programming precision in
transconductance, input impedance, output impedance,
Temperature stability and dc offsets with respect to threshold
voltage of respective MOSFETs.
Index Terms—Floating Gate MOSFETs, Operational Transconductance Amplifier, Specification, Threshold Voltages,
High Frequency Small S ignal Analysis
I. INTRODUCTION
The expansion of communication and electronics
industry with high level of reliability communication requires
high level of chip integration and directed research towards
the field of high frequency applications. In the new designed
circuit topologies for high frequency signal processing
conventional methods based on voltage op-amp are no longer
adequate as op-amp has a closed-loop gain dependent
bandwidth. OTA is a transconductance type device, which
means that the input voltage controls an output current by
means of the device transconductance, labeled gm. This makes
the OTA a voltage-controlled current source (VCCS). An
OTA produces an output current that is proportional to the
voltage difference between its input terminals multiplied by
the gain which is controlled by the bias current of OTA which
is third input of operational transconductance amplifier [1].
OTA has very high input impedance and very high output
impedance. As shown in Figure1, OTA process the input
voltages with low input current over a wide common mode
input range, to produce an internal representation of the input
differential voltage and to provide a current to the output that
is relatively independent of the output voltage.
Operational transconductance amplifiers are important
building blocks for a wide range of electronic circuits. It acts
as a replacement for the conventional op-amp in both first and
second-order active filters [2]. It can use as a two-quadrant
multiplier and hence can be used for implementing voltage
controlled oscillators (VCO) and filters (VCF) for analog
music synthesizers. OTA uses a pseudo-differential input
stage and common mode feed forward which is used for
realization of high frequency continuous time filters [3].
Therefore, applications like filters, impedance inversion,
differential amplifier etc. can be easily implemented with
OTA, as it use capacitance only in place of resistance. OTA is
also being used as a programmable unit in FPAAs [4].
Programmability is required like for biologically inspired
circuits such as bionic ear processor, learning circuits and
related adaptive filters, neuromorphic and cellular computing
circuits, etc. According to the proposed design procedure and
using FGMOS in place of conventional MOSs in the circuit,
programmability is introduces. While maintaining small size
and low power consumption, conductivity of a MOS can be
corrected by altering its threshold voltage (VT) by a field user
[5, 6].
Figure 1. Block Diagram of OTA
II. PROPOSED ANALOG DESIGN CYCLE
A. Proposed Analog Design Cycle
Floating gate MOS are like conventional MOS with an
additional gate in which by modifying the charge at the
floating gate MOS characteristics (threshold) can be
Analog Field Programmable CMOS OperationalTransconductance Amplifier (OTA)
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programmed on-chip after fabrication with real time, non-
volatile, reconfigurable programming. Programmability can
easily be introduced in CMOS operational transresistance
amplifier design by following the design cycle shown in
Figure2.
Algorithm:
1. Analyze circuit with the help of block diagram to
establish desired functionality.
2. Simulate the circuit to check its functionality with
basic sizing and biasing conditions.
3. Design the equivalent small-signal model of the
circuit.
4. Derive specifications in terms of threshold voltage of
transistors.
5. Analyze sensitivity of each specification with respect
to respective thresholds.
6. Simulate the circuit to check the sensitivity of each
specification.
7. Layout creation and verification of the circuit with
basic sizing and biasing conditions.Then after testing
and extraction, fabricate the design.
8. Program the transistor’s thresholds to adjust the
desired specifications with huge accuracy
Figure 2: Flowchart of Proposed Analog IC Design Procedure
Therefore this design analogy saves design time and cost.
The tradeoff between accurate and optimize design which
analog designer has to maintain throughout the design
procedure does not remain the major issue while designing
analog circuits now. As with the proposed design flow
optimized design can be fabricated and final accurate
prototype with fine on-chip tuning can be derived.
B. Design Objectives
Before designing or introducing programmability inOTA
CMOS circuit few design objectives need to be considered.
Firstly the variation in the design specifications should be
large and continuous. Indirect, non-volatile and high precision
programming of FGMOS thresholds can produce large range
and continuous programming of specifications. Second design
objective is that the variation of each specification should be
independent of the otheri.e., each specification should be
programmed either by one or more FGMOS but should not
alter any other design specifications. However if specification
programming are not independent then either through
modifying the circuit or by compensating the affected
specification value using different set of FGMOS, should
beprepared. Thirdly, operating point of the circuit should not
alter too much during programming, i.e. current density in
each transistor should not change significantly or in other
words offset current should not vary significantly.
III. BASIC CMOS OTA CIRCUIT DESIGN
A. OTA Circuit Design
An operational Transconductance amplifier (OTA) is a
high gain voltage controlled current source amplifier (as
shown in Figure 3(a)) and consists of differential pair M1 and
M2 and according to the difference of input voltages, current
flows through it and get mirrored from M6 and M5 to M8 and
M7 through two current mirrors M3 & M5 and M4 & M6.
Hence output current through M8 is proportional to the
difference of input voltage applied to the differential amplifier.
Basic circuit [7] is considered and using its first cut design
equations deriving specifications are derived in terms of MOS
threshold voltage. While analyzing basic OTA circuit, to
obtain the desired functionality and basic characteristics,
circuit sizing and biasing conditions are adjusted.
(a)
(b)
Figure 3 (a): Circuit diagram of CMOS OTA (b): High frequency small signal equivalent circuit loop of the OT A.
B. High Frequency Small Signal Analysis
For high frequency small signal analysis of OTA, circuit
is subdivided into the smaller sub-parts like Differential
Amplifier and current mirrors. Diff-Amp produces currents in
the drains proportional to the input voltage difference. At high
frequency, effect of parasitic capacitances need to be
considered. The high frequency small signal analysis of
differential amplifier is shown in Figure 3(b) where, outputs
current get mirrored to the output terminal with the help of
current mirrors. By applying basic KVL and KCL current and
voltages in the circuit is analyzed and the expressions for ID9
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and ID10 in terms of differential voltage is derived which in
turn is used to derive the design equations for OTA. The
expression of output current depends upon the threshold
voltage of M9 and M10
(1)
Transconductance(depends upon threshold voltages of M9 and
M10)
(2)
Similarly expressions of other specifications are derived:-
(3)
(4)
(5)
So, design specifications are dependent on respective
MOSs threshold voltages. Sensitivity analysis of each
specification with respect to respective MOSs is performed
and results have been formulated. Simulation results
characterizing the basic OTA design is illustrate in next
section.
C. Characteristics of basic OTA design
The basic OTA design has been simulated and its basic
functionality with central value of specifications at specific
biasing and sizing conditions of the circuit is estimated.
Transistors aspect ratio is tabulated in Table 3.9. The biasing
current IB = 100μA. The supply voltages are ±2.5V. Thus at a
specific sizing and biasing condition of the design, frequency
response ofopen loop gain, input impedance, output
impedance and transconductance is shown in Figure 4(a), 4(b),
4(c) and 4(d) respectively.The characteristics summary is
tabulated in Table2.
Figure 4: Frequency Response of (a) Open loop gain (b) Input impedance(c)
Output impedance (d) Transconductance of OTA.
T ABLE1: T RANSISTOR ASPECT RATIO OF THE CIRCUIT IN FIGURE 3(B)
M1,M2,M5,M6 2.1um(W)/0.7um(L)
M3,M4 2.1um(W)/10.5um(L)
M7-M10 2.1um(W)/0.7um(L)
T ABLE2: MAIN CHARACTERISTICS OF OTA DESIGN AT BIAS CURRENT, IB
=100µA AND BIASING VOLTAGES= ±2.5V
Design parameters Value
DC open loop gain 0.2
Gain bandwidth product 300MHz
Input resistance 22.139ohm
Output resistance 12Kohm
Input current dynamic range -20uA to 20uA
Offset current 0.15uA
Power dissipation 3.96mW
IV. DESIGN OF PROGRAMMABLE OTA
A. Programming Technique
From simulation results of basic OTA circuit it is
observed that the OTA circuit is justifying its characteristics.
To introduce programmability in basic OTA circuit, all
MOSFETs are replaced by floating gate MOSFETs. Floating-
gate MOSFETs are conventional MOSFETs wherein memory
is stored in the form of charge trapped on floating-gate,
affecting its threshold voltage. Two antagonistic quantum
mechanical transfer processes, viz. hot e- injection and Fowler
Nordheim tunneling, alter the trapped charge on a floating
gate. It leads additional attributes to the FGMOS transistors
such as nonvolatile analog memory storage on floating-gate,
locally computed bidirectional memory updates and memory
modification during normal transistor operation. It is
represented by symbol showing injection and tunneling nodes,
attached at the common floating gate in Figure 5(a).
(a) (b)
Figure 5 (a): Symbol of a normal MOS with indirectly programmable floating
gate using injection and tunneling (b)Output Characteristics of a FGMOSFET
1) Tunneling
Charge is added to the floating gate by removing electron
from it by means of Fowler-Nordheim tunneling across oxide
capacitor. This shifts the curve (Figure 5(b)) to the right or in
other words threshold voltage of the transistor increases.
2) Injection
Charge is removed from the floating-gate by adding
electron on it by impact-ionized hot electron injection from the
channel to the floating gate across the thin gate oxide. This
shifts the curve (Figure 5(b)) to the left or in other words
threshold voltage of the transistor decreases.
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Figure 6: Circuit Diagram of proposed modified OT A design whose
specifications are programmable by field user to any desired value
Hence the modified OTA circuit consists of floating gate
MOSFETs, introduces programming ability of its design
specifications and the circuit is represented in Figure 6.
Design characteristics of OTA can be expressed in terms of
threshold voltages, by replacing gm of the respective
transistors with their threshold voltages. Therefore basic
characteristics of the design can be adjusted to desired value
after fabrication using transistors with programmable
threshold. Hence it save several simulation steps as accurate
prototype of OTA circuit can be developed using only first cut
equations, as well as, it makes the circuit reconfigurable.
Equations expressing sensitivity of each specification with
respect to respective FGMOSs have been derived and verified
using simulation results.
B. Sensitivity Analysis of Specifications
Output Current:-Sensitivity of output currentIout has been
evaluated using equation (1) which shows dependence on
threshold of FGMOSs M9 and M10. Thus the sensitivity of Iout
with respect to FGMOSFET M9 and M10 is calculated using
partial differentiation of Iout w.r.t Vt9and Vt10considering rest
thresholds constant, is given by:
(6)
(7)
Transconductance: - Sensitivity of transconductance gm has
been evaluated using equation (2) which shows dependence on
threshold of FGMOSs M9 and M10. Thus the sensitivity of gm
with respect to FGMOS M9 and M10 is calculated using
partial differentiation of gm w.r.t Vt9and Vt10considering rest
thresholds constant, is given by:
(8)
(9)
Input impedance: - Similarly sensitivity of input resistance
Zin has been evaluated using equation (3) which shows
dependence on threshold of FGMOSs M9 and M10. Thus the
sensitivity of Zinwith respect to Vt9 and Vt10considering rest
thresholds constant, is given by:
(10)
(11)
Output Impedance: -Sensitivity of output impedance Zout of
OTA expressed by equation (4) depends on threshold voltages
FGMOSs M6 and M7. Thus sensitivity of Zout with respect to
Vt6 and Vt7 is given by:
(12)
(13)
Offset Current: - However sensitivity of offset current of
OTA is calculated with respect to respective FGMOSs M3 and
M6 is given by:
(14)
(15)
The sensitivity of offset current can also be calculated w.r.t
the other threshold voltages of FGMOS.
C. Simulation Results demonstrating programming steps
used to program circuit specifications
The circuit diagram of Figure 6 representing modified
OTA design is simulated using BSIM3 level 49 MOSFET
models using T-Spice 0.35µm CMOS process . Voltage gain of
OTA is programmable independently using Vt4 i.e. using
FGMOS M4, as shown in Figure 7. Gain can be programmed
within range from 0.05 to 2 values using a FGMOS M4. The
transconductance can be programmed using FGMOS M7 in
range from 0.28mho to 1.2mho as shown in figure 8.
Moreover at particular sizing and biasing condition of the
proposed OTA circuit, the range of transconductance
magnitude programming in decibels is from 6 dB to 12dB
(0.28mho to 1.2mho) while change in output impedance and
gain need to be compensated using Vt6 & Vt4, respectively.
Similar input impedance of the design can be dominantly
programmed using Vt9 within programming range from
0.8mΩ to 1.2mΩ however, variation in gain with Vt9 need to
be compensated using Vt4. And output impedance is
programmed using FGMOS M6, Vt6 within range from 350Ω
to 125KΩ while variation in gain & transconductance need to
be compensated using Vt4 &Vt7 respectively. Hence with
modified OTA design, gain, transconductance, input and
output impedance can be programmed moreover, offset output
voltage/current of the circuit can also be programmed using a
FGMOS M8, i.e., programming Vt8 can adjust the offset of
the circuit. With iterative simulations and parametric analysis
of each specification, programming steps which would be used
to program design specification of OTA after fabrication, are
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tabulated in Table 3. Therefore the modified OTA design
provides on-chip programming of its specifications as well as
offset correction.
Figure7. Plot of Programmable Gain with the threshold voltage of FGMOS M4
Figure8. Plot of Programmable Transconductance with the threshold voltage
of FGMOS M7
Therefore, the final modified circuit consists of four
FGMOS which can program gain, transconductance, input
impedance, output impedance and offset current to any desired
value within the defined range with very high precision.(about
13 bit programming resolution is observed. Thus the final
circuit consists of four FGMOSs and its layout is shown in
Figure 9.
T ABLE3:- PROGRAMMING STEPS TO PROGRAM SPECIFICATIONS ALONG WITH
THEIR RANGE OF VARIATION
D. Final OTA circuit with required Floating gate transistors
and its Programming Steps:
The final modified programmable OTA circuit using
only four floating gate transistors M4, M6, M7 and M9, is
simulated using BSIM3 level 49 MOSFETs model along
indirectly programmable FGMOS’s simulation model using
Virtuoso, 0.35 um CMOS process. The design is also being
developed for fabrication and the layout is demonstrated in
Figure 9. The chip area occupied by the circuit is 65µm ×
54µm. Thus circuit specifications of modified high frequency
operational transresistance amplifier after fabrication to
desired value in the specific range using respective floating
gate transistors as expressed in form of programming steps in
Table 3. Moreover, the specifications can be programmed with
13bit programming precision. Hence, circuit specifications can
also be programmed continuously.
V. CONCLUSION
The proposed programmable modified OTA design are
simulated and results claimed that the circuit specifications
like Gain, transconductance, input impedance and output
impedance can be programmed along with offset voltage
compensation, using number of programming steps which can
be executed with the help of five floating gate transistor M4,
M6, M7, M8 and M9. All three design objectives, variation in
the specifications should be large and continuous, variation of
each specification should be independent of the other and
operating point of the circuit should not alter too much during
programming, i.e. offset current should not vary significantly
have been justified from our results. Therefore, we would like
to conclude by proposing OTA in which gain,
transconductance, input impedance and output impedance can
be programmable after fabrication. It finds applications in high
frequency systems where field programmable voltage control
current source is required and justifies a systematic approach
to develop programming ability in basic analog building
blocks using non-volatile, indirect field-programming ability
feature of floating gate transistors. Hence it can be used in RF
programmable current-mode systems which require low
power, thermally stable yet compact and simple hardware such
as universal filters, voltage controlled oscillators and various
other non-linear applications.
Figure 9: Layout of final OTA circuit in which gain, transconductance, input output impedance and offset current can be programmed independently using
FGMOSs (M4, M6, M9 and M7 respectively)
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