graduate attributes (southern cross university, australia) the graduates of the university are...

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Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes: Intellectual rigour Creativity Ethical understanding, sensitivity, commitment Command an area of knowledge Lifelong learning --- ability of independent & self-directed learning Effective communication and social skills Cultural awareness (From: S. Yeo, CDTLink, NUS, July 2004)

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Page 1: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Graduate Attributes(Southern Cross University, Australia)

The graduates of the University are expected to develop the following

during their programmes:

Intellectual rigour

Creativity

Ethical understanding, sensitivity, commitment

Command an area of knowledge

Lifelong learning --- ability of independent & self-directed learning

Effective communication and social skills

Cultural awareness

(From: S. Yeo, CDTLink, NUS, July 2004)

Page 2: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Importance of Materials Processing

All electronic devices & systems are made of materials in

various combinations

Raw materials are far from the final electronic products

Semiconductor materials (e.g., Si, Ge, GaAs, GaN...) used for

devices must be of extremely high purity and crystalline order

Page 3: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Desirable Device Qualities

Strong functionality

Reliable, long lifetime

Low cost, high energy efficiency

Small volume, light weight...

Examples: your notebook PC, mobile phone…

All these require high precision and efficient materials processing technologies

Page 4: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Real Materials and their Processing

Particles, lines and rigid bodies vs. real materials

Material-specific properties determine the function

and processing details of a material

Comprehensive knowledge of materials processing

requires ~ 5-10 years of learning and practice

Advantage and role of physics students

Page 5: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Insulators, Conductors, Semiconductors from energy band structures

E

valence band filled

conduction band empty

Forbiddenregion Eg > 5eV

Bandgap

E

conduction band

Eg < 5eVBandgap

+

-electronhole

E

valence band

partially-filledband

Insulator Semiconductor ConductorSi: Eg = 1.1 eVGe: Eg = 0.75 eVGaAs: Eg = 1.42 eV

SiO2: Eg = 9 eV

Page 6: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Electrons and Holes in Semiconductor

Intrinsic semiconductor Carriers come from valence electron excitation

Doped semiconductor

N type

P type

Key: Effective control of charge carriers

Page 7: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Carrier type, density & mobility determined in Hall measurements

)(

22

eh

eh

x

yH npe

np

BJ

ER

Jx

B VH

Ey

Longitudinal conductance:Jx = Ex = e(ne + ph)Ex

Longitudinal resistivity: = 1/

The Hall coefficient:

If electron is the dominant carrier in the material, then we have:

= 1/ = (ene)-1, and ne

RH

1

Carrier density: n = -(eRH)-1, and the mobility: e = - RH/

Page 8: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Light Emission in Semiconductors

E

conduction band

Bandgap

+

-

electron

valence band

Si: Eg = 1.1 eV, = 1100 nmGaAs: Eg = 1.4 eV, = 873 nmAlAs: Eg = 2.23 eV, = 556 nm

hole

hElectron-hole recombination

Si: indirect bandgap, ineffectiveGaAs: direct bandgap, effective

Page 9: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Basic semiconductor devices

p n

Diode

p n

Bipolar transistor

pE C

BMetal-semiconductor

contacts

p+

p+

nS D

G

G

Junction field-effect transistor (JFET)

p

n+ n+

G SiO2

Depletion region

Metal-oxide-semiconductor FET (MOSFET)

Inversion region

S D

Page 10: Graduate Attributes (Southern Cross University, Australia) The graduates of the University are expected to develop the following during their programmes:

Real Device Structures in IC

MOSFET

Bipolar transistorDiode

n

n+ p

metal contacts