freescale and the freescale logo are trademarks of...

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat.

& Tm. Off. Airfast is a trademarks of Freescale Semiconductor, Inc. All other product or service

names are the property of their respective owners. © 2013 Freescale Semiconductor, Inc.

2 Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademarks of

Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © 2013 Freescale

Semiconductor, Inc.

A Global Leader in

Microcontrollers

Digital Networking

Automotive MCU

Analog & Sensors

RF

Five Core Product

Groups

Four Primary

Markets

Automotive

Networking

Industrial

Consumer

> 50 Year Legacy

> 5,500 Engineers

> 6,000 Patent Families



Semiconductor, Inc.

GaAs MMIC

Solutions Expansion

Performance Leadership with

Airfast RF Power Solutions

RF Power

Products Growth

Markets & Applications

Super Macro

Macro

Pico

Micro

High Power RF

LDMOS, LDMOS ICs

High Power RF

LDMOS, LDMOS ICs

LDMOS ICs, MMICs

Medium Power

LDMOS, LDMOS ICs


Industrial, Scientific, Medical

• CO2 Lasers

• Plasma Generation

• MRI


Wireless Infrastructure

Femtocell

WiFi Access Point

Smart Energy

ADAM, GPA, LNA, output

transistor in small cell, RF

SW, DSA/VVA

MMIC PA, LNA, RF SW,

DSA/VVA, Up/down conv.

MMIC PA, LNA, RF SW,

DSA/VVA, Up/down conv.

MMIC PA, LNA, RF SW

Broadcast

• UHF & VHF Television

• FM Radio

• Shortwave Radio

Aerospace

• Distance Measuring

• Weather Radar

• Air Traffic Mgmt

Military/Defense

• Long Range Radar

• HF, VHF, UHF Comms

• Radio Navigation

Land Mobile Radio

• Public Safety

• Marine

• Dispatch



Semiconductor, Inc.

• Freescale RF maintains a clear #1 position for cellular infrastructure

– More than 2x market share of next largest supplier*

• Freescale’s latest Airfast performance puts us in best-in-class at all frequency bands and power levels

• Our unparalleled worldwide applications support and most reliable supply chain gives us an undisputed market leadership position

• We are creating further differentiation in our product offerings to continue to grow our cellular market share

*Source: ABI Research, December 2012



Semiconductor, Inc.

Customers Facing…

• Skyrocketing data rates

• Multiple wireless standards

• Increasing network complexity

• Stringent power requirements

• Worldwide rise in IP traffic

Mobile Broadband for Evolving Cellular Market

• Enable increased capacity requirements on cellular networks

• Support for 4G data rates and beyond

• Reduced energy consumption

• Shrinking equipment footprint

• Reduced time-to-market for new designs

Past

Product Portfolio

RF Power Macrocells

Signal Bandwidth 20 –35 MHz

RF Bandwidth Single Tx band

RF PA Size and Cost • Mix of single and two-stage

final stage device

• Air cavity devices

(above 1 GHz)

RF Performance • Class AB and symmetric

Doherty

• 30 –40% lineup efficiency

Current

Solutions

RF Power Covering femto to macrocells

Signal Bandwidth Support for full bands/broad

range of frequencies

RF Bandwidth • Single Tx to Multi Tx band

• Linearization and filtering/

out-of-band emissions

considerations

RF PA Size and Cost • Plastic packaging

• Package uniformity over

range of Tx bands

• Additional integration

• Reduction in board space

RF Performance • Advanced high efficiency PAs

• 45%+ lineup efficiency

(multiple bands)



Semiconductor, Inc.

Develop innovative RF solutions that meet and

exceed market needs for performance, bandwidth

and cost efficiency.

Airfast Delivers Multi-Generational Performance Improvements 5 points higher drain efficiency over prior generation

25% higher power density

Significantly improved linearity

Industry leading instantaneous bandwidth, up to 160 MHz

Second generation over-molded plastic packaging: most

technically advanced and cost-effective packages available

for high power RF transistors

Beyond components - System Level Solutions

DPD validated reference circuit designs for the full PA

lineup to shorten customer’s development time and cost

RF Power Solutions: Fast Forward to the Future



Semiconductor, Inc.

• MRF8P20140W was the first wideband

part to operate simultaneously in bands

‘F+A’ and remains the most widely deployed

part across in CMCC’s TD-S base stations

• TD-LTE deployments ramping in 2013, over

100,000 base stations planned to be

deployed

• Freescale has launched a full line of Airfast

products for 2.3 & 2.6 GHz

• Committed to providing devices with leading

performance



Semiconductor, Inc.

IMS News

• Continuing to expand the market’s broadest RF

power portfolio

• Devices designed to provide exceptional power

density, signal bandwidth, linear-efficiency and gain

in small form factor with cost-effective configurations

• For symmetrical and asymmetrical Doherty

configurations

• Two new 2.3 GHz devices

AFT23H200-4S2L, AFT23S170-13S

− Ideal for indoor TD-LTE microcell base stations

− High gain and efficiency

• Four new 2.6 GHz devices

AFT26HW050S/GS, AFT26P100-4WS,

AFT26H160-4S4, AFT26H200W03S

− Ideal for outdoor TD-LTE macrocell base stations

− High gain and efficiency



Semiconductor, Inc.

Airfast RF Power Solutions 28 V LDMOS

− Designed for cellular operation from

2496 to 2690 MHz

− Compact footprint of an in-package Doherty

device

− Housed in NI-780S-4L4S package

AFT26HW050S/GS Doherty Performance

− Measured in a single transistor

− 2496-2690 MHz performance in Doherty test

fixture:

− Peak power: 55 W (47.4 dBm)

− VBW resonance: 130 MHz

− At an average power of 9 W

Gain: 14.2 dB

Drain Eff iciency: 47.1%

AFT26HW050S/GS

50 W Rated Power

In-package asymmetric

Doherty ideal for Metrocell

applications

Availabil i ty:

• In Production



Semiconductor, Inc.



2496 to 2690 MHz


device

− Housed in NI-780S-4L package

AFT26P100-4WS Doherty Performance



fixture:

− Peak power: 125 W (51 dBm)



Gain: 15.3 dB


AFT26P100-4WS

100 W Rated Power

In-package symmetric

Doherty ideal for higher

power Metrocell

applications

Availabil i ty:

• In Production



Semiconductor, Inc.



2496 to 2690 MHz


device

− Housed in NI-880XS-4L4S package

AFT26H160-4S4 Doherty Performance



fixture:




Gain: 15.7 dB


AFT26H160-4S4

160 W Rated Power


Doherty ideal for Macrocell

base station applications

Availabil i ty:

• Samples now

• Production June ‘13



Semiconductor, Inc.



2496 to 2690 MHz


device

− Housed in NI-1230S-4S package

AFT26H200W03S Doherty Performance



fixture:




Gain: 14.0 dB


AFT26H200W03S

200 W Rated Power


Doherty ideal for high power

Macrocell applications

Availabil i ty:

• Samples now

• Production June ‘13



Semiconductor, Inc.



2300 to 2400 MHz


device

− Housed in NI-1230S-4L2L package

AFT23H200-4S2L Doherty Performance



fixture:




Gain: 15.3 dB


AFT23H200-4S2L

200 W Rated Power


Doherty ideal for high power

Macrocell applications

Availabil i ty:

• In Production



Semiconductor, Inc.



2300 MHz to 2400 MHz

− Meets strenuous linearity demands of

multicarrier GSM

− Ideal for use in symmetric and asymmetric

Doherty applications

− Housed in NI-780S-2L4S package

AFT23S170-13S Class AB Performance

− 2300-2400 MHz performance :



Class AB Gain: 18.8 dB

Class AB Drain Eff iciency: 33.9%

AFT23S170-13S

170 W Rated Power

Main or Peaking Amplifier in

Doherty PAs

Availabil i ty:

• In Production



Semiconductor, Inc.

• RF expansion in all adjacent and emerging RF markets

Co-focus on cellular

• Airfast Rollout

Covering all bands, all power levels

Anticipating and meeting customer requirements

• Technology Leadership

All RF semiconductor technologies

Most advanced packing portfolio

Offering optimum system solutions

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