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  • Rev. A, June 2003

    FQP5N

    60C / FQ

    PF5N60C

    N-C

    hannel MO

    SFET

    2003 Fairchild Semiconductor Corporation

    Gate Charge Test Circuit & Waveform

    Resistive Switching Test Circuit & Waveforms

    Unclamped Inductive Switching Test Circuit & Waveforms

    Charge

    VGS

    10VQg

    Qgs Qgd

    3mA

    VGS

    DUT

    VDS

    300nF

    50K

    200nF12V

    Same Typeas DUT

    Charge

    VGS

    10VQg

    Qgs Qgd

    3mA

    VGS

    DUT

    VDS

    300nF

    50K

    200nF12V

    Same Typeas DUT

    VGS

    VDS

    10%

    90%

    td(on) tr

    t on t off

    td(off) tf

    VDD

    10V

    VDSRL

    DUT

    RGVGS

    VGS

    VDS

    10%

    90%

    td(on) tr

    t on t off

    td(off) tf

    VDD

    10V

    VDSRL

    DUT

    RGVGS

    EAS = L IAS2----21 --------------------

    BVDSS - VDD

    BVDSS

    VDD

    VDS

    BVDSS

    t p

    VDD

    IAS

    VDS (t)

    ID (t)

    Time

    10V DUT

    RG

    L

    I D

    t p

    EAS = L IAS2----21EAS = L IAS2----21----21 --------------------

    BVDSS - VDD

    BVDSS

    VDD

    VDS

    BVDSS

    t p

    VDD

    IAS

    VDS (t)

    ID (t)

    Time

    10V DUT

    RG

    LL

    I DI D

    t p

  • Rev. A, June 2003

    FQP5N

    60C / FQ

    PF5N60C

    N-C

    hannel MO

    SFET

    2003 Fairchild Semiconductor Corporation

    Peak Diode Recovery dv/dt Test Circuit & Waveforms

    DUT

    VDS

    +

    _

    DriverRG

    Same Type as DUT

    VGS dv/dt controlled by RG ISD controlled by pulse period

    VDD

    LI SD

    10VVGS

    ( Driver )

    I SD( DUT )

    VDS( DUT )

    VDD

    Body DiodeForward Voltage Drop

    VSD

    IFM , Body Diode Forward Current

    Body Diode Reverse Current

    IRM

    Body Diode Recovery dv/dt

    di/dt

    D =Gate Pulse WidthGate Pulse Period

    --------------------------

    DUT

    VDS

    +

    _

    DriverRG

    Same Type as DUT

    VGS dv/dt controlled by RG ISD controlled by pulse period

    VDD

    LLI SD

    10VVGS

    ( Driver )

    I SD( DUT )

    VDS( DUT )

    VDD

    Body DiodeForward Voltage Drop

    VSD

    IFM , Body Diode Forward Current

    Body Diode Reverse Current

    IRM

    Body Diode Recovery dv/dt

    di/dt

    D =Gate Pulse WidthGate Pulse Period

    --------------------------D =Gate Pulse WidthGate Pulse Period

    --------------------------

  • Rev. A, June 2003

    FQP5N

    60C / FQ

    PF5N60C

    N-C

    hannel MO

    SFET

    2003 Fairchild Semiconductor Corporation

    Mechanical Dimensions

    Dimensions in Millimeters

    TO - 220