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Flexible Electronics [Focus: Thin Film Transistors]

A Patent Landscape Report with

100% Manual Analysis

August 05, 2016

Flexible Electronics

A Patent Landscape Report with 100% Manual Analysis

2 SAGACIOUS IP

www.sagaciousresearch.com

Contents.

1. Introduction. ............................................................................................................................... 5

1.1 Flexible Electronics ................................................................................................................ 5

1.2 Thin Film Transistors (TFTs) ................................................................................................... 6

1.3 About this Report .................................................................................................................. 8

2. Analysis Overview. ................................................................................................................... 11

3. Overall Trends in the Technology Domain. ............................................................................. 12

3.1 TFT Patent Filing Trend ........................................................................................................ 14

3.2 TFT Application Areas .......................................................................................................... 15

3.3 TFT Application Areas: Patent Filing Trend ......................................................................... 16

3.4 Countries of Research ......................................................................................................... 17

3.5 Market Geographies ............................................................................................................ 18

3.6 Research Countries v/s Market Geographies...................................................................... 19

3.7 Key Inventors ....................................................................................................................... 20

3.8 Major Player ........................................................................................................................ 21

3.9 New Entrants ....................................................................................................................... 22

3.10 Cross Domain Companies .................................................................................................. 22

3.11 Academic Collaboration Opportunities: Top Universities/ Institutes ............................... 24

3.12 Independent Inventors ...................................................................................................... 26

3.13 Patent Prosecution Law Firms in the Domain ................................................................... 28

3.14 Law Firms association (with Major Players) ...................................................................... 32

3.15 Law Firms Filing Trend ....................................................................................................... 34

3.16 Top IPCs ............................................................................................................................. 35

3.17 Key Patents – Maximum Backward Citation ..................................................................... 37

3.18 Backward Citation Trend ................................................................................................... 39

3.19 Key Patents - Maximum Forward Citations ...................................................................... 41

3.20 Forward Citation Trend ..................................................................................................... 42

3.21 Litigations .......................................................................................................................... 44

4. Technology Analysis. ................................................................................................................ 45



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4.1 Claim Focus .......................................................................................................................... 46

4.2 Problems Being Solved ........................................................................................................ 47

4.3 Problem Being Solved – Research Country ......................................................................... 48

4.4 Problem Solved – Claim Focus: ........................................................................................... 49

4.5 Major Players – Problem Being Solved ............................................................................... 50

4.6 Taxonomy ............................................................................................................................ 51

4.7 Technology Break Down - Level 1 ....................................................................................... 52

4.8 Technology Breakdown - Level II ........................................................................................ 54

4.9 Technology Breakdown – Level 2 ........................................................................................ 56

4.10 Problem Solved vs Level II ................................................................................................. 58

4.11 Technology Breakdown – Level III - Components (Semiconductor Layer) ....................... 59

4.12 Technology Breakdown- Components (Insulation Layer) ................................................. 62

4.13 Technology Breakdown-Major Components (Conductive Layer) ..................................... 63

4.14 Technology Breakdown-Major Components (Substrate) ................................................. 66

4.15 Technology Breakdown-Major Components (Passivation Layer) ..................................... 68

4.16 Technology Breakdown-Major Components (Dielectric).................................................. 70

4.17 Technology Breakdown-Major Components (Active Layer) ............................................. 72

5. Major Players Analysis. ............................................................................................................ 74

5.1 Major Players Trends........................................................................................................... 76

5.2 Major Players-Last Five Years .............................................................................................. 78

5.3 Major Players’ Application Areas ........................................................................................ 80

5.4 Technology Breakup – Major Players .................................................................................. 81

5.5 Samsung .............................................................................................................................. 82

5.5.1 Samsung– Technology Fencing ........................................................................................ 87

5.6 Semiconductor Energy ........................................................................................................ 88

5.6.1 Semiconductor Energy – Technology Fencing ................................................................. 94

5.7 LG ......................................................................................................................................... 95

5.7.1 LG – Technology Fencing ................................................................................................ 101

5.8 Fujifilm ............................................................................................................................... 102

5.8.1 Fujifilm – Technology Fencing ........................................................................................ 107

5.9 Fuji Xerox ........................................................................................................................... 108



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5.9.1 Fuji Xerox – Technology Fencing .................................................................................... 114

5.10 Toppan Printing ............................................................................................................... 115

5.10.1 Toppan Printing – Technology Fencing ........................................................................ 120

5.11 Seiko Epson Corporation ................................................................................................. 122

5.11.1 Seiko Epson Corp – Technology Fencing ...................................................................... 127

5.12 Sony ................................................................................................................................. 128

5.12.1 Sony – Technology Fencing .......................................................................................... 133

5.13 BOE Technology .............................................................................................................. 134

5.13.1 BOE Technology – Technology Fencing ........................................................................ 140

5.14 Canon .............................................................................................................................. 141

5.14.1 Canon – Technology Fencing ........................................................................................ 146

5.15 Companies having maximum forward citations ............................................................. 148

5.16 Companies having maximum backward citations........................................................... 149

5.17 Major Players – Comparative Analysis – R&D ................................................................. 151

5.18 Major Players – Portfolio Strength Analysis .................................................................... 154

5.19 Major Players – Comparative Analysis ............................................................................ 155

5.20 Collaborations in the domain .......................................................................................... 157

6 Contact For Enquiries. ............................................................................................................. 160

7 Methodology. .......................................................................................................................... 161

Relevance Criteria ................................................................................................................... 162

8 References. .............................................................................................................................. 163



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1. Introduction.

1.1 Flexible Electronics

Flexible electronics refers to electronic devices that can be rolled, bent and folded according to

user’s requirements.

Popular flexible electronics are, but not limited, to, mobile phones, scanners, cameras, tablets,

Radio Frequency Identification (RFID) tags, smart cards, solar cells, smart wearable devices,

Light Emitting Diode (LED) display, Liquid Crystal Display (LCD), Organic Light Emitting Diode

(OLED) display, Active Matrix Organic Light Emitting Diode (AMOLED) display, electronic paper,

and various other types of display devices.

The market for flexible electronics is expected to reach $13.23 billion by 2020.

Fig 1: Samsung Prototype; Fig 2: Flexible X-ray detector; Fig 3: World's first film substrate-based bendable color electronic paper with image memory function

Depending on the application of the flexible electronic device, it may be formed of multiple

components, including, substrates, back panels, front panels, image sensors, thin film

transistors, polarizers, color filters, batteries, etc.

Fig.1 Fig.2 Fig.3



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Fig 4: shows the key components of exemplary flexible electronic devices.

A flexible electronic device is made by depositing flexible electronic circuitry, which enables the

functions of the device, on a flexible substrate. Such flexible electronic circuitry is comprised of

thin film transistors (TFTs).

1.2 Thin Film Transistors (TFTs)

TFTs are fabricated by sequentially depositing multiple layers such as semiconductor layer,

insulation layer, barrier layers, dielectric layers, etc. If the layers of the TFT circuitry are not

deposited properly, the resulting flexible electronic device may not function properly.

Therefore, the design of the TFT circuitry, the material of different layers, the design of the

process of depositing these layers and the implementation of the depositing process is very

critical to successful and reliable manufacturing of the flexible electronic device.

Several companies, universities and individuals are, therefore, actively researching and

innovating in this area to continue to come up with solutions and making flexible electronics a

widely available and viable solution for the near future.

•electronic circuitory for controlling device Thin Film Transistor

•for holding electronic device elements like LCDs, color filters, etc Substrate

•transparent crystal to filter light Polarizer

•to absorb light of certain colours Color Filters

•to capture images Image Sensor

•back side cover for device Backplane

•viewing side glass/plastic Front plane



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Fig 5: Carbon nanotube thin-film transistors and integrated circuits on a flexible and transparent substrate; Fig 6: Thin film transistor

TFTs are fabricated by sequentially depositing multiple layers such as semiconductor layer,

insulation layer, barrier layers, dielectric layers, etc. If the layers of the TFT circuitry are not

deposited properly, the resulting flexible electronic device may not function properly.

Therefore, the design of the TFT circuitry, the material of different layers, the design of the

process of depositing these layers and the implementation of the depositing process is very

critical to successful and reliable manufacturing of the flexible electronic device.

Several companies, universities and individuals are, therefore, actively researching and

innovating in this area to continue to come up with solutions and making flexible electronics a

widely available and viable solution for the near future.

Fig: 7 highlights structure of thin film transistors

Fig.5 Fig.6



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1.3 About this Report

This report intends to provide the state of the art in the domain of TFTs used in flexible

electronic devices. The report provides insights into problem areas, existing solutions,

innovation trends, market trends and key participants in the innovation ecosystem in the TFT

domain.

This report can help everyone associated with the domain of flexible electronics or TFTs by

answering questions pertinent to them and enabling them to take key decisions. For example,

this report can be beneficial to CEOs, Heads and members of R&D departments, Heads and

members of IP/Strategy Departments, Heads and members of HR Departments, Heads and

members of Marketing Departments, Academic Researchers and Scientists, Patent Agents

and/or Attorneys, Investors and Consultants operating in the domain of flexible electronics or

TFTs.

This report, for example, can help uncover answers to the following questions for the

readers:

1. When did patenting activity in the domain start and how it has evolved?

2. Which countries are the innovation hubs for this technology domain?

3. Which countries are suitable market geographies for utilizing this technology?

4. Who are major players involved in this technology?

5. What potential collaboration opportunities are available with smaller players?

6. Who are the recent entrants?

7. Which research institutes / universities are working in this area?

8. Which technology areas are most focused on for research and development?

9. What are latest technological advancements in the domain?

10. Who are the key inventors / experts in different technology areas?

11. What are the different activities being taken up by the major players?

12. What are their patenting strategies and areas of focus?



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13. How do the major players stack up and compare against each other in terms of IP

potential / R&D Team / Strategies etc.?

14. Which are the best patents and who owns them?

To prepare this report, multiple diverse searches were conducted to comprehensively identify

all the patents pertinent to TFTs in Flexible Electronics. These patents were then analyzed

manually to capture their focus areas, application areas and the problems being solved.

Thereafter, informative and actionable insights were generated by combining this manual

information with the bibliographic information of the patents.

This report includes three sections:

1. Overall trends in the domain of TFTs used in flexible electronics:

This section highlights technology evolution (patent filing trend), primary countries of

research, major market geographies, existing collaborations and opportunities, new

entrants, cross domain players, key patents, most active law firms, prominent inventors

and important IPC classes in the domain of thin film transistors for flexible electronics.

2. Detailed technology analysis of patents and applications published in March-May 2016

This section highlights the focus of patents and applications published in March-May

2016 w.r.t. the fabrication process of TFT, components of TFT disclosed, materials of

the TFT components, properties of TFT, problems being solved and application areas

being targeted.

This report covers TFTs used in Flexible Electronics. To obtain similar analysis for all

(or any other) components pertinent to Flexible Electronics (e.g., polarizer,

substrates, front plane, back plane, etc.) please write to us at

[email protected]

This section of the report provides an in-depth analysis for a short period of 3

months. To obtain similar detailed analysis for a longer period please write to us at

[email protected]

mailto:[email protected]




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3. Major players trends in the domain of TFTs used in flexible electronics:

This section provides an analysis of the major players in the domain focusing on their

patent filing trends, their research centers, market of interest, technology focus,

partnerships, strategies, and other important parameters.

Based on patenting activity, following companies emerged as the major players, and have been

analyzed in detail in this section:

1. Samsung

2. Semiconductor Energy

3. LG

4. Fujifilm

5. Fuji Xerox

6. Toppan Printing

7. Seiko Epson Corporation

8. Sony

9. BOE Technology

10. Canon

This section of the report provides certain insights about the major players. To

obtain an in-depth portfolio analysis, a SWOT analysis or a customized analysis of

any of the major players (OR any other player) please write to us at

[email protected]




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2. Analysis Overview.

The dataset for this analysis included an initial set of 10,863 unique INPADOC patent families,

out of which 3,210 patent families were found to be of relevance for this study. These 3,210

patent families include 19.8% (634) dead patent families and 80.2% (2,576) alive patent

families. Of the alive patent families, 74% families are granted and 26% pending. Fig: 8 shows

the distribution of overall patents into relevant and non-relevant cases.

Fig: 8 Distribution of overall patents

Note:

Legal Status information is obtained from Questel Orbit. The numbers in the above charts represent the number of unique patent families.

Legal Status Definition:

Alive & Granted: A patent family with at least one granted and alive family member.

Alive & Pending: A patent family with no granted member, but at least one pending application.

Dead: A patent family with all the members being lapsed, abandoned, revoked or expired.

Click the attached excel sheet to view the

source data used to prepare this chart. To

view and customize the charts, on our

dashboard, please write to us at

[email protected]




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The same procedure has been followed for determining legal status of patents in all the graphs stating legal status of unique INPADOC family.

3. Overall Trends in

the Technology

Domain.

1. Filing trend of technology

2. Application areas of thin film transistors

3. Thin Film Transistors’ Application Areas Trend

4. Research countries

5. Market geographies

6. Research Countries v/s Market Geographies

7. Key Inventors

8. Major Players

9. New Entrant

10. Cross Domain Companies

11. Collaboration Opportunities – Universities/Institutes

12. Independent Inventors

13. Law Firm in the domain

14. Law Firms association (with Major Players) and Prosecution Trend

15. Patents via PCT

16. Top IPCs

17. IPCs’ Trend

18. Key Patents – Maximum Backward Citation



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19. Backward Citation Trend

20. Backward Citations – IPC Analysis

21. Key Patents - Maximum Forward Citations

22. Forward Citation Trend

23. Forward Citations – IPC Analysis

24. Technology Transfer

25. Litigations



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3.1 TFT Patent Filing Trend

The patent filing trend is indicative of evolution of technology over the time. The below graph

shows the number of patents filed over years in the domain of thin film transistor for flexible

electronics. From the graph, it is clearly evident that the patent filing trend is consistent over

the time. Major peak was seen in 2005.

Fig: 9 TFT Patent Filing Trend

Patent filing is almost consistent since 2004 except for a peak in 2005, however, the number of

unique assignees has been continuously increasing. Samsung was a major contributor in the

year 2005 by filing around 48 % of the patents filed in 2005.

0

50

100

150

200

250

300

350

400

450

Number of Unique INPADOC Patent Families

Number of Unique Assignees

PCT Applications

Click the attached excel sheet to view the source data used to prepare this chart. To view

and customize the charts, on our dashboard, please write to us at

[email protected]

Note: The data for 2015 and 2016 is not complete

as all the applications filed in this period are not

published on the date of preparing this report.




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3.2 TFT Application Areas

Thin film transistors are useful in different application areas such as LCD, LED, OLED, RFID,

sensors, etc. Fig. 10 summarizes the distribution of unique INPADOC patent families w.r.t. the

application areas disclosed therein.

LCD, 1464, 21%

Smartphone, 1241, 18%

LED, 1174, 17%

OLED, 839, 12%

EL Display, 586, 9%

Other Displays, 485, 7%

RFID, 361, 5%

Electrophoretic Display, 255, 4%

Sensor, 188, 3%

AMOLED, 153, 2%

Other Application

Areas, 100, 2%

Fig: 10 TFT Application Areas

Note: 1. Keyword-based search strings were formulated for each application area. The numbers in this chart represent the number

of unique relevant INPADOC families that were captured through these individual search strings. 2. One patent family may be

categorized in more than one application areas. 3. Other application areas include Paper Electronics, X-Ray Sensor, Memory, Solid

State Image Pickup Device, Wearable, Smartcard, Capacitors and IC card. Further, patents which do not disclose about any of the

application areas listed in graph are also part of other application areas.

Click the attached excel sheet to view the source data used to prepare this chart. To view and

customize the charts, on our dashboard, please write to us at

[email protected]




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3.3 TFT Application Areas: Patent

Filing Trend

The pie chart of Fig: 10 shows the overall distribution of IP protection w.r.t. various application

areas.

The FIG: 11 below highlights the evolution trend for each of these application areas and how

the focus on patent filing in these areas has advanced over the years.

Fig: 11 Evolution trend

Note: 1. The numbers in the above charts represent unique number of relevant INPADOC patent families. 2. Darker shade of a color

represents relatively higher number of patents. 3. The data for 2015 and 2016 is not complete as all the applications filed in this

period are not published on the date of preparing this report.



[email protected]




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3.4 Countries of Research

Research countries represent the country of first filing of a patent family. The country of first

filing of a family can be representative of the origin of research of the invention covered in that

patent family. Japan, South Korea and United States of America have emerged as the top

research countries in the domain of TFT in Flexible Electronics.

Most of the inventions (around 93.3% of the total patents) are originated in Japan, Korea,

United States, and China mainly due to location of R&D centers in these geographies.

Fig: 12 Research Countries

Note: 1. The countries in the map are colored on the basis of number of unique relevant INPADOC patent families filed in the

countries as priority country. Darker shade of a color represents relatively higher number of patent families. 2. The numbers in the

table represent unique number of relevant INPADOC patent families.



[email protected]




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3.5 Market Geographies

Market Geographies are the countries in which the technology of patent is expected to be

utilized. A country is considered as market geography for a patent family if at least one member

of the family is filed in that country.

Patent filing in China has increased since 2011 with 37.45% of patent families filed in this

period.

Fig: 13 Market Geographies

Note: 1. The countries in the map are colored on the basis of number of unique relevant INPADOC patent families filed in the

countries. Darker shade of a color represents relatively higher number of patent families. 2. The numbers in the table represent

unique number of relevant INPADOC patent families.



[email protected]




19 SAGACIOUS IP


3.6 Research Countries v/s Market

Geographies

A technology invention researched in a country may

be filed in multiple countries for protection in

potential markets. Similarly, there can be countries

that have a good market but show very little research.

Fig. 14 highlights the comparison between research

countries and market geographies over time.

Most of the research is coming from Asian countries

with Japan leading the research effort. China has

emerged as one of the major countries of research

since 2011, with over 73% of CN patents in domain

filed in this period.

Surprisingly, Europe is neither a strong research

center in this domain, nor a major jurisdiction for IP

protection. IP in TFT domain is primarily

manufacturing oriented and lack of manufacturing

competitors in Europe make it a less attractive

jurisdiction for patent protection.

Fig: 14 Research Countries v/s Market Geographies

Taiwan has negligible research but is a major jurisdiction for patent protection primarily due to

extensive manufacturing ecosystem.

Note: 1. The numbers in the chart above represent unique number of relevant INPADOC patent families.



[email protected]




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3.7 Key Inventors

Key inventors are inventors filing maximum patents in the domain of TFT. The inventors can be

reached for the purpose of hiring, consultation, expert testimony, etc. The embedded table lists

the top inventors and the companies with which they have filed patents.

Inventor Name Number of

patents

H0

1L0

02

97

86

H0

1L0

05

10

0

H0

1L0

02

13

36

H0

1L0

05

10

5

H0

1L0

05

13

0

H0

1L0

02

71

2

H0

1L0

03

52

4

H0

1L0

02

90

8

H0

1L0

05

14

0

H0

1L0

02

10

0

Yamazaki Shunpei

(Semiconductor

Energy)

86 55 1 11 0 0 39 0 0 1 11

Wu Yiliang

(Fuji Xerox) 68 4 26 3 16 17 1 10 9 6 3

Liu Ping

(Fuji Xerox) 53 5 19 4 14 12 1 7 6 4 3

Lee Sang Yoon

(Samsung) 45 6 6 1 5 8 0 10 6 8 1

Suh Min-Chul

(Samsung) 40 6 12 4 6 4 1 8 9 7 6

Tanaka Atsushi

(Fujifilm) 34 28 0 15 4 4 2 0 1 2 3

Suzuki Masayuki

(Fujifilm) 33 29 0 16 4 4 2 0 1 1 1

Ahn Taek

(Samsung ) 33 13 6 0 1 3 0 4 3 2 3

Li Yuning

(Fuji Xerox) 32 1 10 1 2 5 0 6 5 1 0

Matsubara Ryohei

(Toppan Printing) 28 23 2 20 14 1 0 0 0 4 0

Wu Yiliang is currently working with TE connectivity and is assistant professor at McMaster

University. All other inventors are working with same companies mentioned in the table.

Fig: 15 Key Inventors



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Sagacious IP

Comment on Text

Thin Film Transistors

Sagacious IP

Comment on Text

Solid State Devices Using Organic Materials As The Active Part, Or Using A Combination Of Organic Materials With Other Materials As The Active Part; Processes Or Apparatus Specially Adapted For The Manufacture Or Treatment Of Such Devices, Or Of Parts Thereof

Sagacious IP

Comment on Text

Specially Adapted For Rectifying, Amplifying, Oscillating Or Switching, Or Capacitors Or Resistors With At Least One Potential- Jump Barrier Or Surface Barrier

Sagacious IP

Comment on Text

Using A Temporary Substrate

Sagacious IP

Comment on Text

The Substrate Being Other Than A Semiconductor Body, E.G. An Insulating Body

Sagacious IP

Comment on Text

Using Organic Compositions

Sagacious IP

Comment on Text

With Semiconductor Regions Connected To An Electrode Carrying Current To Be Rectified, Amplified Or Switched And Such Electrode Being Part Of A Semiconductor Device Which Comprises Three Or More Electrodes

Sagacious IP

Comment on Text

Comprising Aliphatic Or Olefinic Chains, E.G. Poly N-Vinylcarbazol, Pvc, Ptfe

Sagacious IP

Comment on Text

Processes Or Apparatus Adapted For The Manufacture Or Treatment Of Semiconductor Or Solid State Devices Or Of Parts Thereof



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3.8 Major Player

Major players represent the companies owning maximum number of patent families in the

domain. Fig: 16 highlights major players along with corresponding number of patent families.

There are 242 entities (companies, universities, independent inventors) that are actively

patenting in this domain.

Samsung, the runaway leader, owns around 19% of the total patent families in domain.

The other companies are collaborating to increase their joint patent ownership.

LG and Phillips formed JV named LP display.

JOLED, Inc. is a JV between Japan Display, Sony and Panasonic to produce medium-sized

OLED displays. JOLED owns 10 patent families in the domain.

Fig: 16 Major Players

608

156 147 120 98 96 88 81 73 72 60 46 44

0

100

200

300

400

500

600

700

Sam

sun

g

Sem

ico

nd

uct

or

Ener

gy Lg

Fujif

ilm

Fuji

Xer

ox

Top

pa

n P

rin

tin

g

Seik

o E

pso

n

Son

y

Bo

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chn

olo

gy

Ca

no

n

Pa

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son

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Ko

da

k

Sum

ito

mo

Ch

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Company Name

Note: 1. The numbers in the chart above represent unique number of relevant INPADOC patent families owned by the company or

its subsidiaries. 2. Detailed analysis of each of the major players is provided in section 3.

Click the attached excel sheet to view the source data used to

prepare this chart. To view and customize the charts, on our

dashboard, please write to us at

[email protected]




22 SAGACIOUS IP


3.9 New Entrants

This table below lists the new entrants in this domain. Companies that have started filing

patent applications in this domain after 2013 have been considered as new entrants.

All the top new entrants are from China.

Companies/Universities Number of

Patents

Year of

Entry City Location

Shanghai Daoyi Chemical

Technology Co. Ltd. 14 2014

Shanghai China

Shanghai Lanpei New Material


Shanghai China

Fuzhou University 4 2015 Fuzhou China

Shanghai Hehui Optoelectronic Co.

Ltd. 3 2014

Shanghai China

Nanjing University of Posts and

Telecommunications 2 2014

Nanjing China

Truly (huizhou) Smart Display Co.

Ltd. 2 2014

Huizhou China

Jiangsu University 2 2014 Zhenjiang China

Wuhan Huaxing Photoelectric


Shenzhen China

Fig: 17 New Entrants



[email protected]




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3.10 Cross Domain Companies

Companies from other domain have also shown interest in manufacturing thin film transistors

for flexible electronics. Fig: 18 highlights the cross domain companies having patents in the

domain.

Company Name Number of

Patents City Country

Nippon Steel Chemical 6 Tokyo Japan

Bridgestone Corporation 6 Tokyo Japan

Daicel Corporation 4 Tokyo Japan

Honeywell International 2 Morris

Plains USA

Toyobo Co Ltd 1 Osaka USA

Hyundai Electronics Industries 1 Seoul South Korea

Posco 1 Pohang South Korea

Ajinomoto 1 Tokyo Japan

Fig: 18 Cross Domain Companies



[email protected]




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3.11 Academic Collaboration

Opportunities: Top Universities/

Institutes

There are many universities/institutes who are actively filing patents in this domain. These

universities/institutes can be reached for collaboration / research opportunities for developing

new technologies.

Below table highlights the top filing universities.

Universities/Institutes

Number

of

Patents

Location Key Inventor

Industrial Technology Research

Institute 32 Taiwan Wang Yi-Kai (7)

Electronics And

Telecommunications Research

Institute

28 South Korea Koo Jae Bon(8)

Peking University 25 China Zhang Sheng-Dong(21)

Korea Research Institute Of

Chemical Technology 15 South Korea Yi Mi Hy (8)

National Institute Of Advanced

Industrial Science And

Technology

15 Japan Hasegawa Tatsuo (5)

Tsinghua University 13 China Qiu Yong (6)

Industry-academic Cooperation

Foundation Yonsei University 13 South Korea Kim Hyun Jae (7)

Northwestern University 12 USA Facchetti Antonio (12)

Korea Advanced Institute Of

Science And Technology 12 South Korea Yang Min Yang (4)

Tokyo Institute Of Technology 11 Japan Hosono Hideo(6)

Industry-aca-demic Cooperation

Foundation Gyeong- Sang

National University

11 South Korea Kim Yun Hi(7)

Fudan University 10 China Zhang Qun (7)



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South China University Of

Technology 9 China Lan Lin-Feng(7)

University Of Electronic Science

And Technology Of China 9 China Jiang Ya-Dong(9)

Korea Electronics Technology

Institute 9 South Korea Han Jeong In(5)

Hiroshima University 9 Japan Takimiya Kazuo(7)

Korea University Research And

Business Foundation 9 South Korea Hong Moon Pyo (3)

Osaka University 8 Japan Takeya Junichi (4)

Korea Institute Of Science And

Technology 8 South Korea Hong Jae-Min (2)

Fig: 19 Academic Collaboration

Key Highlights:

Peking University filed around 88% of its total patents in last six years

Also, Tokyo Institute of Technology seems to be very open to collaborations. The university has

filed all their patents in collaboration with other companies like Canon, Nissan Chemical, DIC

Corporation, Asahi Glass, Sumitomo Chemical.



[email protected]




26 SAGACIOUS IP


3.12 Independent Inventors

There are inventors in the domain who have unassigned patents and are not working with any

company. These inventors can be approached for hiring or licensing purposes.

As can be seen, the domain has very less independent inventors, indicating that the research is

primarily driven by companies and universities.

Inventor Name Number of Patents Priority Year

Joo Seung Ki 2 2010

Yang Young Chol 1 2002

Liaw Yue-Gie 1 2012

Yoon Ju Young 1 2002

Lim Ji Suk 1 2005

Lin Yung Sheng 1 2006

Lai Chih Ming 1 2005

Hwang Seong Yong 1 2002

Liao Wen-Shiang 1 2012

Song Keun Kyu 1 2006

Murti Dasarao K. 1 2002

Chuang Chiao Shun 1 2006

Park Yong Gi 1 2005

Hahn Jung Seok 1 2006

Hanket Gregory 1 2004

Yamaga Takumi 1 2005

Yeh Yung Hui 1 2003



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Chen Fang Chung 1 2006

Moon Hyun Sik 1 2007

Kim Do Hwan 1 2009

Knoll Wolfgang 1 2010

Renshaw Christopher

Kyle 1 2009

Koo Bon Won 1 2003

Shieh Chan-Long 1 2009

Fig: 20 Independent Inventors

Note: 1. The number of patents represents number of unique INPADOC patent families. 2. The table shows only the inventors who

are not working with the company.



[email protected]




28 SAGACIOUS IP


3.13 Patent Prosecution Law Firms

in the Domain

There are around 700 law firms providing services for patent prosecutions in the domain

worldwide.

Pan Korea Patent & Law Firm has been involved in prosecution of only five patents in the last

six years.

There has been a decrease in patent prosecution work for all the top law firms except for

Robinson IP in the last six years.

Fig: 21 below Highlights the top 10 law firms in the domain.

156

99

63 33 32 30 29 26 23 23

0306090

120150180

Pae

n K

ori

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teu

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im &

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e

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. Lee

, Mo

ck &

Par

tne

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ent

& L

aw

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kore

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p

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taIn

tern

atio

nal

South Korea

90 82

49 40 40 35 30 29 26 24

0

20

40

60

80

100

Nak

ash

ima

Sun

ao

Oka

be

Inte

rnat

ion

alLa

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d p

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aw

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ash

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mar

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On

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uki

man

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ato

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gs In

tern

atio

nal

Pat

ent

Off

ice

Dep

artm

ent

entr

ust

ed Y

amas

hit

a

Japan



29 SAGACIOUS IP


Fig: 21 Patent Prosecution Law Firms [21(a) South Korea, 21(b) Japan, 21(c) USA, 21(d) China]

117

93 93 82

71 71

56 50 48 47

0

30

60

90

120

Ro

bin

son

Inte

llect

ual

Pro

per

ty L

aw O

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rue

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lon

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ivak

, McC

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nd

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eust

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on

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dy

LLP

USA

94

72

33 30 29 24 23 22 22 19

0

20

40

60

80

100

Liu

, Sh

en &

Ass

oci

ates

Ccp

it P

aten

t &

Tra

dem

ark

Law

Off

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Ch

ina

Pat

ent

Age

nt

Jian

g Ti

ng

Ch

ina

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nce

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ent

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emar

k A

gen

ts

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me

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rnat

ion

alP

rop

erty

Age

nt

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ngz

i Law

Off

ice

Ch

ina

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da

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llect

ual

Pro

per

ty A

gen

ts

The

Shan

ghai

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ent

&Tr

adem

ark

Law

Off

ice

Bei

jing

Kan

gxin

Inte

llect

ual

Pro

per

ty

Bei

jing

San

you

Inte

llect

ual

Pro

per

ty A

gen

cy

China

Note: 1. The number on bar represents number of patents. 2. The chart is limited to the availability of data in patent

database.



30 SAGACIOUS IP


42

17 15 14 11 10 9 8 7 7

05

1015202530354045

Ko

rean

a P

aten

t &

Law

Fir

m

Pae

nko

riah

teu

khe

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in

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Kim

& C

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g

Jan

g H

oo

n

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ang

Eui M

an

Lee

Ip G

rou

p

Pan

kore

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p

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en

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pin

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g Yo

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n

South Korea

33 30

26 23

15 15 15 14 11 11

0

5

10

15

20

25

30

35

Nak

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Jap

an P

aten

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nd

Pat

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Taiy

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nal

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Off

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Shig

a In

tern

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tern

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nal

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Bu

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be

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aw O

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Pat

en

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a In

tern

atio

nal

Pat

ent

Off

ice

Miy

amae

& A

sso

ciat

es

Japan



31 SAGACIOUS IP


Fig: 22 Patent Prosecution Law Firms - Last five years [22(a) South Korea, 22(b) Japan, 22(c) USA, 22(d) China]

62

28 25

18 18 15 15 14 12 11

0

10

20

30

40

50

60

70

Ro

bin

son

Inte

llect

ual

Pro

per

ty L

aw O

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Ko

dak

Fish

& R

ich

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son

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tor

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44

19

14 14 14 12 12 11 11 11

0

5

10

15

20

25

30

35

40

45

50

Liu

, Sh

en &

Ass

oci

ates

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nt

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ina

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per

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Lin

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gui

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ark

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jing

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you

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llect

ual

Pro

per

ty A

gen

cy

China



[email protected]




32 SAGACIOUS IP


3.14 Law Firms association (with

Major Players)

The following table indicates the association between the top law firms and the companies they

work with. Most of them are mainly associated with a single company but a couple of them

seem to be associated with multiple companies.

Law Firms

Nu

mb

er o

f p

ate

nts

Major Players

Sam

su

ng

Sem

ico

nd

ucto

r

En

erg

y

Can

on

LG

Fu

jifi

lm

Su

mit

om

o

Ch

em

ical

So

ny

Pan

aso

nic

Fu

ji X

ero

x

Seik

o E

pso

n

BO

E T

ech

no

log

y

Ko

dak

To

pp

an

Prin

tin

g

Paenkoriahteukheobeopin 156 153 0 0 0 0 0 0 0 1 0 0 0 0

Robinson Intellectual

Property Law Office 117 0 117 0 0 0 0 0 0 0 0 0 0 0

Riaenmokteukheobeopin 99 94 0 0 0 0 0 0 0 0 0 1 0 0

Liu, Shen & Associates 94 32 0 0 0 0 0 3 0 0 0 30 0 0

Harness Dickey & Pierce 93 79 0 0 0 0 0 0 0 0 9 0 0 0

Cantor Colburn LLP 93 75 0 0 1 0 0 0 0 0 0 0 0 0

Nakashima Sunao 90 2 0 0 0 71 0 0 0 16 0 0 0 0

Okabe International Law

Office 82 0 0 72 9 0 0 0 0 0 0 0 0 0

Innovation Counsel LLP 82 82 0 0 0 0 0 0 0 0 0 0 0 0

CCPIT Patent & Trademark

Law Office 72 0 24 28 0 1 0 0 3 0 0 0 0 0

Fitzpatrick Cella, Harper &

Scinto 71 0 0 71 0 0 0 0 0 0 0 0 0 0

F. Chau & Assoc. LLC 71 69 0 0 0 0 0 0 0 0 0 0 0 0

Kodak 65 0 0 0 0 0 0 0 0 0 0 0 65 0

Koreana Patent & Law Firm 63 0 0 0 0 33 1 0 0 0 0 1 0 0

Fay Sharpe LLP 56 14 0 0 0 0 0 0 0 38 0 0 0 0

Sughrue Mion PLLC 50 4 0 0 0 9 21 0 0 1 0 0 0 0

Fig: 23 Law Firms association



33 SAGACIOUS IP




[email protected]




34 SAGACIOUS IP


3.15 Law Firms Filing Trend

Fig: 24 Law Firms Filing Trend

The figure above provides the success in achieving grant by the top law firms and how their

prosecution success has progressed over the years.

Note: 1. The number on bubble and table represents number of patents. The color of bubbles is darkened on the basis of grant

percentage of law firms.



[email protected]




35 SAGACIOUS IP


3.16 Top IPCs

Number of

patents in

IPC class

Number of

Patent In IPC

subclass

IPC Class H01L 2812

IPC

Subclass

H01L0029786

1598

H01L0021336

670

H01L005105

615

H01L005100

383

H01L005140

358

H01L005130

353

IPC Class G02F 516

IPC

Subclass

G02F0001136

225

G02F00011368

186

G02F00011362

87

G02F00011343

80

G02F00011333

73

IPC Class C07D 177

IPC

Subclass

C07D049504

31

C07D040914

21

C07D049522

14

C07D048704

12

C07D051900

10

IPC Class C08G 158

IPC C08G006112

52

Sagacious IP

Comment on Text

Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

Devices Or Arrangements, The Optical Operation Of Which Is Modified By Changing The Optical Properties Of The Medium Of The Devices Or Arrangements For The Control Of The Intensity, Colour, Phase, Polarisation Or Direction Of Light, E.G. Switching, Gating, Modulating Or Demodulating; Techniques Or Procedures For The Operation Thereof; Frequency-Changing; Non-Linear Optics; Optical Logic Elements; Optical Analogue/Digital Converters

Sagacious IP

Comment on Text

Liquid Crystal Cells Structurally Associated With A Semi-Conducting Layer Or Substrate, E.G. Cells Forming Part Of An Integrated Circuit

Sagacious IP

Comment on Text

In Which The Switching Element Is A Three-Electrode Device

Sagacious IP

Comment on Text

Active Matrix Addressed Cells

Sagacious IP

Comment on Text

Electrodes

Sagacious IP

Comment on Text

Constructional Arrangements

Sagacious IP

Comment on Text

Heterocyclic Compounds

Sagacious IP

Comment on Text

Ortho-Condensed Systems

Sagacious IP

Comment on Text

Containing Three Or More Hetero Rings

Sagacious IP

Comment on Text

In Which The Condensed System Contains Four Or More Hetero Rings

Sagacious IP

Comment on Text

Ortho-Condensed Systems

Sagacious IP

Comment on Text

Heterocyclic Compounds Containing More Than One System Of Two Or More Relevant Hetero Rings Condensed Among Themselves Or Condensed With A Common Carbocyclic Ring System Not Provided For In Groups

Sagacious IP

Comment on Text

Macromolecular Compounds Obtained Otherwise Than By Reactions Only Involving Unsaturated Carbon-To-Carbon Bonds

Sagacious IP

Comment on Text

Macromolecular Compounds Containing Atoms Other Than Carbon In The Main Chain Of The Macromolecule



36 SAGACIOUS IP


Subclass C08G007500

26

C08G006100

12

C08G007306

10

C08G007506

8

IPC Class G09F 113

IPC

Subclass

G09F000930

101

G09F000900

34

G09F000935

10

G09F000937

5

G09F000933

1

Fig: 25 Top IPCs

IPC classifications of a patent provide insight the focus area of the technology. ~ 87.5% of

the patents are classified in H01L.

The fig: 25 shows distribution of patents according to IPC classes and IPC subclasses.

Note: 1. The number on table represents number of unique INPADOC patent families. 2. One patent can be classified under multiple

IPCs. 3. Drag mouse over IPC in chart to see their definition.



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Sagacious IP

Comment on Text

Macromolecular Compounds Obtained By Reactions Forming A Linkage Containing Sulfur With Or Without Nitrogen, Oxygen, Or Carbon In The Main Chain Of The Macromolecule

Sagacious IP

Comment on Text

Macromolecular Compounds Obtained By Reactions Forming A Carbon-To-Carbon Link In The Main Chain Of The Macromolecule

Sagacious IP

Comment on Text

Polycondensates Having Nitrogen-Containing Heterocyclic Rings In The Main Chain Of The Macromolecule

Sagacious IP

Comment on Text

From Cyclic Thioethers

Sagacious IP

Comment on Text

Displaying; Advertising; Signs; Labels Or Name-Plates; Seals

Sagacious IP

Comment on Text

In Which The Desired Character Or Characters Are Formed By Combining Individual Elements

Sagacious IP

Comment on Text

Indicating Arrangements For Variable Information In Which The Information Is Built-Up On A Support By Selection Or Combination Of Individual Elements

Sagacious IP

Comment on Text

Being Liquid Crystals

Sagacious IP

Comment on Text

Being Movable Elements

Sagacious IP

Comment on Text

Being Semiconductor Devices, E.G. Diodes



37 SAGACIOUS IP


3.17 Key Patents – Maximum Backward

Citation

Backward citations of a patent are an indicator of strength of the patent claims and may have

an indirect co-relation to value of a patent. Below table highlights the patent having the

maximum number of backward citations.

Publication

number Title

Number

of Cited

Patents

Remaining

Life

(years)

Assignee

US9147768B2

Semiconductor device

having an oxide

semiconductor and a

metal oxide film

39 15.1 Semiconductor

Energy

US9059295B2

Thin film transistor

having an oxide

semiconductor and

metal oxide films


Energy

US9318613B2

Transistor having two

metal oxide films and

an oxide

semiconductor film


Energy

US9196739B2


including oxide

semiconductor film

and metal oxide film


Energy

US9024313B2 Semiconductor

device 35 14.1

Semiconductor

Energy


device 34 14.8

Semiconductor

Energy

US9190528B2


and manufacturing

method thereof


Energy



38 SAGACIOUS IP


US8716708B2


and method for

manufacturing the

same


Energy

US9123573B2

Oxide semiconductor

stacked film and

semiconductor device


Energy


device 30 14.4

Semiconductor

Energy

Fig: 26 Key Patents

Note: 1. The backward citations were only limited to the patent families present in current dataset set related to TFTs. 2. The

number of cited patents represents number of unique INPADOC patent families.



[email protected]




39 SAGACIOUS IP


3.18 Backward Citation Trend

Backward citations are good indicator of value and potential strength of technology domain.

Only around 1.12 % of the patents in the technology domain have more than 25 backward cited

patents.



40 SAGACIOUS IP


36.57 % of families have less than 5 backward citations. This indicates that most of the

inventions are standalone and discrete, and not superficial increments on existing inventions.

Even during the peak filing years (2005-8), most patent families have less than 5 backward

citations, thus reinforcing the above insight.

Even in recent years, when the technology has existed for ~15 years, bulk of patent families

have <5 citations.



[email protected]




41 SAGACIOUS IP


3.19 Key Patents - Maximum Forward

Citations

Forward citations are a good indicator of whether a patent covers a basic technology. Below

table highlights key patents having maximum forward citations.

5 out of top 10 most cited patents are owned by non-major players.

The most cited document is an abandoned application by Samsung. Interestingly, Samsung

doesn’t even cite this application while other players like Canon, Semiconductor Energy, etc.

have built inventions on top of it and gotten their applications granted.

Publication

number Title

Number of

Citing

Patents

Remaining

Life (Years) Assignee

US20070272922A1

ZnO thin film

transistor and method

of forming the same

47 0 Samsung

US6433359B1

Surface modifying

layers for organic thin

film transistors

31 5.2 3M

US5347144A

Thin-layer field-effect

transistors with MIS

structure whose

insulator and

semiconductor are

made of organic

materials

24 0

Centre

National de la

Recherche

Scientifique

US6232157B1 Thin film transistors 19 2.2 Agere

Systems

US8203143B2 Thin film field effect

transistor 16 14.3 Fujifilm

JP2007073701A

Thin-film transistor

using amorphous

oxide layer

16 9.2 Canon



42 SAGACIOUS IP


US5705826A

Field-effect transistor

having a

semiconductor layer

made of an organic

compound

11 0 Hitachi

US5936259A

Thin film transistor

and organic

semiconductor

material thereof

9 1.3 Lucent

Technologies

US7586130B2

Vertical field effect

transistor using linear

structure as a channel

region and method for

fabricating the same

8 9.3 Panasonic

US6858308B2

Semiconductor

element, and method

of forming silicon-

based film

8 5.7 Canon

Fig: 28 Key Patents - Maximum Forward Citations

Note: 1. The forward citations were only limited to the patent families present in current dataset set related to TFTs. 2. The number

of citing patents represents number of unique INPADOC patent families.



[email protected]




43 SAGACIOUS IP


3.20 Forward Citation Trend

Around 0.4% of the patent families have more than 6 patent families in the domain citing them.

The most cited patents are not from the early years of the technology.

Moreover, no invention from any period has turned out to be the basis for extensive further

research and stabilization of the TFT technology in flexible electronics.

The above insight coupled with the declining overall patent filing trend and new recent entrants

indicates that research in this technology is evolving in a new direction.

Fig: 29 Forward Citation trend



44 SAGACIOUS IP


3.21 Litigations

Since the domain is new and the products are yet to be launched in the market, there are no

litigations in this area. (On the basis of availability of data on Questel and Thomson Innovation)



[email protected]

Note: 1. The bubble size and corresponding number represents the number of unique patent families. The Y-axis represents the

number of unique INPADOC families in the forward citations of the representative member of a patent family. The forward citations

were limited to the patent families present in current dataset set (related to TFTs in flexible electronics).




45 SAGACIOUS IP


4. Technology

Analysis.

This section includes trends and insights obtained by manual analysis of patents & applications

published in the period Mar – May 2016

1. Taxonomy

2. Claim Focus

3. Problem Being Solved

4. Problem Being Solved – Research Country

5. Problem Being Solved – Claim Focus

6. Technology Break down Taxonomy Level 1

7. Technology Break down Level II

8. Technology Breakdown-Major Components (Semiconductor Layer)

9. Technology Breakdown- Components (Conductive Layer)

10. Technology Breakdown-Major Components (Insulation Layer)

11. Technology Breakdown-Major Components (Passivation Layer)

12. Technology Breakdown-Major Components (Passivation Layer)

13. Technology Breakdown-Major Components (Dielectric)

14. Technology Breakdown-Major Components (Active Layer)

15. Market Geographies Based Technology Breakdown



46 SAGACIOUS IP


4.1 Claim Focus

There were members from 69 patent families published in the period of analysis [Mar – May

2016]. Analysis of the focus / scope of the claims of these patents had a distribution as shown

below.

Fig: 30 Claim Focus

32

14

1

49

2

Manufacturing method of TFT

Semiconductor composition for use in TFT

Semiconductor Thin Film for TFT

Structure of TFT

Substrate for use in TFT



[email protected]

This manual analysis only covers limited data and the charts & insights depicted here cannot be

considered as representative of overall technical trends, but give a good indication of the kind of

insights that can be obtained through such an analysis.

For a more accurate understanding of the technology trends and actionable insights, this analysis

can be extended to a longer period (e.g., the complete data set of 3210 patents since 1996).

Note: 1. The number on the pie chart represents number of unique INPADOC patent families. 2. A patent family may have more than

one focus area.




47 SAGACIOUS IP


4.2 Problems Being Solved

Fig: 31 Pie Chart-Problem being solved

31

23

19

12 5 3

Improving Electric Characteristic Improving Stability of TFT

Improving Efficiency of Fabricating Process Reducing Cost

Reducing Thickness Reducing Weight

Note: 1. The number on the pie chart represents number of unique INPADOC patent families. 2. A patent family may be addressing

more than one problem



[email protected]









48 SAGACIOUS IP


4.3 Problem Being Solved – Research

Country

Problem Solved

Research Countries

Ch

ina

Eu

ro

pean

Pate

nt

Off

ice

Jap

an

So

uth

Ko

rea

Un

ited

Kin

gd

om

Un

ited

Sta

tes o

f

Am

eric

a

Improving Efficient

Fabricating Process 1 1 4 6 0 7

Improving Electric

Characteristic 6 3 11 6 1 4

Reducing weight 0 1 2 0 0 0

Reducing cost 3 1 4 0 1 3

Reducing Thickness 2 0 2 1 0 0

Improving Stability 6 1 7 7 0 2

Fig: 32 Problem Being Solved – Research Country



[email protected]









49 SAGACIOUS IP


4.4 Problem Solved – Claim Focus:

Problem Solved

Claim Focus

Man

ufa

ctu

rin

g

Meth

od

Sem

ico

nd

ucto

r

co

mp

osit

ion

Sem

ico

nd

ucto

r

thin

fil

m

Str

uctu

re

Su

bstr

ate

Electric Characteristic 14 7 0 22 1

Stability 9 5 0 16 2

Efficient Fabricating

Process 8 4 0 15 0

Low Cost 5 0 1 9 0

Reduced Thickness 3 1 0 3 0

Semiconductor

Composition 0 3 1 0 0

Light weight 1 2 0 0 0

Fig: 33 Problem Solved – Claim Focus



[email protected]









50 SAGACIOUS IP


4.5 Major Players – Problem Being

Solved

Problem Solved

BO

E T

ech

no

log

y

Ko

dak

Fu

jifi

lm

LG

Sam

su

ng

Sem

ico

nd

ucto

r

En

erg

y

So

ny

Electric Characteristic 1 1 3 6 0 4 0

Stability 2 0 3 5 0 2 1

Efficient Fabricating

Process 1 2 0 1 3 1 1

Low Cost 1 1 2 0 0 0 0

Reduced Thickness 0 0 0 0 0 1 0

Semiconductor

Composition 0 0 1 0 0 0 0

Light weight 0 0 1 0 0 0 0

Fig: 34 Major Players – Problem Being Solved



[email protected]









51 SAGACIOUS IP


4.6 Taxonomy

Now, to better understand the methods, processes, components, characteristics and ideas

disclosed by the patents, we prepared preliminary patent categorization taxonomy.

Thereafter, all these 69 patent families were manually analyzed and bucketed into the

preliminary taxonomy based on the categories they pertained to. During this analysis, more

categories were identified and the taxonomy was accordingly revised. The final taxonomy

structure is provided in the table below.

It is noteworthy that this taxonomy has emerged out of the analysis of the 69 patent families. A

comprehensive analysis of the domain (e.g., of all 3,223 patent families) will add to this

taxonomy structure and make it more complete. For example, more types of TFTs (beyond

organic and transparent) could get added.

Level I Level II Level III

Components

Semiconductor Layer

Shown in following analysis

Insulation Layer

Substrate

Passivation Layer

Dielectric

Conductive Layer

Active Layer

Other Components

Fabricating Process

Photolithography N/A

Ink Jetting N/A

Printing N/A

Film Deposition Process N/A

Vacuum Treatment N/A

Oxide Layer Formation N/A

Ultraviolet Irradiation N/A

Etching N/A



52 SAGACIOUS IP


Hydrogen Gas Chamber N/A

Thermal Treatment N/A

Controlled Spalling N/A

Laser Ablation N/A

Hydro Plasma Generation N/A

Crystallization Process N/A

Type of TFT

Organic N/A

Transparent N/A

Fig: 35 Taxonomy structure



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53 SAGACIOUS IP


4.7 Technology Break Down - Level 1

The table below shows the distribution of patents into various level 1 nodes and corresponding

to the countries of research.

Research Country

Concepts Covered

Components Fabricating

Process Type of TFT

China 9 9 7

European Patent

Office 2 2 4

Japan 19 17 9

South Korea 15 9 11

United Kingdom 1 2 1

United States of

America 12 9 4

Fig: 36 Technology Break Down (Level 1)

Note: 1. The number on pie chart represents number of unique INPADOC patent families. 2. A patent can be categorized in more than

one taxonomy heads.



[email protected]









54 SAGACIOUS IP


4.8 Technology Breakdown - Level II

Fig 37 below depicts the distribution of patent families in level 1 and level 2 nodes.

Figure 37: Technology Breakdown - Level II



55 SAGACIOUS IP


Other Fabricating methods include:

Controlled Spalling, Laser Ablation, Hydrogen Gas Chamber, Hydro Plasma Generation,

Crystallization Process

Other components shown include:

Antireflective Layer, Light Absorption Layer, Stacked Layer Oxide Film, Transition Layer, Color

Filter Layer, Barrier Layer, Bank Layer, Planarization Layer, Buffer Layer, Charge Injection Layer,

Hydrogen Absorbing Layer, Protective Layer, Silica Oxide Layer, Polarizable Layer, Stresser

Layer, Adhesive Layer, Interconnect For Connecting, Bank, Capacitor Medium Layer, Pixel

Electrode, Channel Layer, Alumina Layer, Gate, Source, Drain Electrodes.



[email protected]









56 SAGACIOUS IP


4.9 Technology Breakdown – Level 2

1. Assignee mapping against level 2 categories

2. Problem solved mapped against level 2 categories

Major Players Vs Level 2:

Level 1 Level 2

Major Players

LG

KO

DA

K

Sam

su

ng

Sem

ico

nd

ucto

r

En

erg

y

Fu

jifi

lm

BO

E T

ech

no

log

y

So

ny

Fabricating

Process

Etching 2 1 1 1 1 0 0

Film Deposition

Process 1 4 2 2 2 0 1

Ink Jetting 0 0 0 0 0 1 0

Oxide Layer

Formation 0 0 0 1 0 0 0

Photolithography 2 2 1 0 2 1 0

Printing 0 0 0 0 1 1 0

Thermal

Treatment 0 0 1 0 0 0 0

Ultraviolet

Irradiation 0 0 0 0 1 0 0

Vaccum

Treatment 0 0 0 1 0 0 0

Crystallization

Process 0 0 1 0 0 0 0

Components

Dielectric 0 2 0 0 0 0 0

Insulation Layer 0 1 0 4 0 1 0

Passivation Layer 1 1 1 0 0 0 0

Protective Layer 1 0 1 1 0 0 0



57 SAGACIOUS IP


Semiconductor

Layer 4 2 0 3 3 0 0

Substrate 0 2 1 0 0 0 0

Transisiton Layer 0 0 0 1 0 0 0

Active Layer 0 0 1 0 0 0 0

Barrier Layer 2 0 1 0 0 1 1

Buffer Layer 2 0 1 0 0 0 0

Conductive Layer 0 0 0 2 1 0 0

Types of TFT Transparent 1 0 2 0 0 2 0

Organic 5 2 3 1 5 3 0

Fig: 38-Table (Major Players V/s Level 2)



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58 SAGACIOUS IP


4.10 Problem Solved Vs Level II

Level 1 Level 2

Problem Solved

Eff

icie

nt

Fab

ric

ati

ng

Pro

cess

Ele

ctr

ic

Ch

aracte

ris

tic

Lig

ht

weig

ht

Lo

w c

ost

Red

uced

Th

ickn

ess

Sem

ico

nd

ucto

r

Co

mp

osit

ion

Sta

bil

ity

Components

Active Layer 1 0 0 0 0 0 0

Conductive Layer 1 3 0 3 1 1 4

Dielectric 5 1 0 1 0 1 1

Drain Electrode 3 0 0 0 0 0 1

Gate Electrode 3 0 0 0 0 0 1

Insulation Layer 3 5 0 1 2 0 2

Organic 1 0 0 0 0 0 0

Other Components 18 29 3 10 4 3 20

Passivation Layer 4 2 0 1 0 0 1

Semiconductor Layer 8 13 1 4 2 2 9

Source Electrode 3 0 0 0 0 0 1

Substrate 3 3 1 0 1 0 4

Fabricating

Process

Controlled Spalling 1 0 0 0 0 0 0

Crystallization Process 1 0 0 0 0 0 0

Curing 1 0 0 0 0 0 0

Etching 2 8 0 1 1 0 4

Film Deposition

Process 11 10 0 5 0 1 6

Hydro Plasma

Generation 1 0 0 0 0 0 0

Hydrogen Gas Chamber 1 0 0 0 0 0 0

Ink Jetting 2 2 0 2 0 0 3



59 SAGACIOUS IP


Fig: 40-Table (Problem Solved v/s Level II)

Laser Ablation 0 0 0 1 0 0 0

Oxide Layer Formation 0 1 0 1 1 0 0

Photolithography 7 7 0 4 0 1 5

Printing 3 1 0 2 1 0 2

Thermal Treatment 1 0 1 0 2 0 2

Ultraviolet Irradiation 0 0 1 1 1 1 0

Vaccum Treatment 0 1 0 1 0 0 0

Types of

TFT

Organic 10 12 3 6 1 4 12

Transparent 4 2 1 3 2 0 4



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60 SAGACIOUS IP


4.11 Technology Breakdown – Level III

- Components (Semiconductor Layer)

Semiconductor Layer could be made of different materials. Fig: 41 (a & b) highlights

components of thin film transistors and the number of patents disclosing about the

semiconductor materials.

(a)

(b)

Fig: 41(a & b) Components & Material - Semiconductor Layer

Material Number of

Patents

Silicon 8

Indium Gallium

Zinc Oxide 7

Gallium 4

Zinc Oxide 4

Tin Oxide 3

Aluminum 2

Indium 2

Lanthanum 2

Zinc 2

Carbon Nanotube 2

Diketopyrrolopyrr

ole Polymers 2

Galium Nitride 2

Zirconium 2

Indium Oxide 2

Indium Zinc Oxide 2

Components Number of

Patents

Semiconductor

Layer 32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1



61 SAGACIOUS IP


Apart from the one shown in table above, following materials for semiconductor layers have

also been mentioned by the patents:

(A-Itzo), Gallium Arsenic (Gaas) Film, Phosphorous (P), Gallium Oxide, Sulphur Doping, Gallium

Pnictides, Zinc Chalcogenides, Germanium (Ge), Nitrogen Oxygen, Graphene Nanoribbons,

Cerium, Helium (He), Silicon Nitride, Boron (B), Tellurium, Indium Gallium Oxide (Igo),

Ytterbium, Cadmium Chalcogenides, Zinc Tin Oxide (Zto), Indium Nitride (Inn) Film, Nitride

Semiconductor

Note: 1. A patent may disclose more than one semiconductor material.



[email protected]









62 SAGACIOUS IP


4.12 Technology Breakdown-

Components (Insulation Layer)

(a)

(b)

Fig: 42(a & b) Components & Material -Insulation Layer

Material Number of Patents

Silicon Oxide 6

Silicon Oxynitride 3

Aluminum Oxide 3

Hafnium Oxide 3

Tantalum Oxide 2

Gallium Oxide 2

Silicon Nitride 2

Silicon Nitride Oxide 2

Magnesium Oxide 2

Barium Oxide Film 1

Stoichiometric

Composition 1

Gallium Zinc Oxide 1

Tin 1

Lanthanum Oxide 1

Yttrium Oxide 1

Aluminum Nitride

Film 1

Aluminum 1

Germanium Oxide 1

Polysilazane 1

Aluminum Oxynitride

Film 1

Polyvinyl Alcohol 1

Silicon 1

Zirconium Oxide 1

Neodymium Oxide 1

Photosensitive Resin 1


Patents

Semiconductor

Layer

32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other

Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1

Note: 1. A patent may disclose more than one Insulation layer material.



63 SAGACIOUS IP




[email protected]









64 SAGACIOUS IP


4.13 Technology Breakdown-Major

Components (Conductive Layer)

(b)

(a)

Fig: 43 (a & b) Components & Material -Conductive Layer


Patents

Semiconductor

Layer

32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other

Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1


Aluminum 5

Titanium 4

Chromium 2

Zinc Oxide 2

Indium 2

Copper 2

Molybdenum 2

Tantalum 2

Gallium Zinc Oxide 2

Galium 2

Zinc 2

Titanium Oxide 1



65 SAGACIOUS IP


Apart from the one shown in table above, following materials for conductive layers have also

been mentioned by the patents:

Cerium, Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Pedot:Pss, Fullerene (C60), Tin

Oxide, Tungsten, Fullerene Derivative [6,6]-Phenyl-C61-Butyric Acid Methyl Ester (Pcbm), Silver,

Zirconium, Tin, Lanthanum, Gold, Lithium Zirconium, Hafnium (Hf), Carbon Nanotube, Indium

Gallium Oxide (Igo), Zinc Tin Oxide (Zto), Indium Gallium Zinc Oxide, Aluminium Tris-

Hydroxyguinoline (Alq3), Indium Zinc Oxide

Note: 1. A patent may disclose more than one Conductive layer material.



[email protected]









66 SAGACIOUS IP



Components (Substrate)

(b)

(a)

Fig: 44 (a & b) Components & Material – Substrate


Patents

Semiconductor

Layer

32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other

Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1


Polyimides 4

Polyethylene

Terephthalate 3

Ceramic 2

Poly(P-Xylylene). 1

Silicon Oxide 1

Polymeric Materials 1

Epoxy Resin

Polyimide. 1

Poly(Oxy-1,4-

Phenyleneoxy-1,4-

Phenylenecarbonyl-

1,4-Phenylene)

1

Fiber-Reinforced

Plastics (Frp) 1

Polycarbonates 1

Filled Polymeric

Materials 1

Polyphenyleneoxides 1



67 SAGACIOUS IP


Apart from the one shown in table above, following materials for substrate have also been

mentioned by the patents:

Glass, Poly(Ethylene-2,6-Naphthaiate), Inorganic Glasses, Poly(Phenylene Sulfide) (Pps),

Inorganic Substrate, Polyamides, Polyethylene Naphthalate (Pen), Epoxies, Coated Metallic

Foils, Metal Foil, Polyketones, Plastic, Polynorbornenes, Poly(Ether Ether Ketone), Quartz,

Poly(Ether Sulfone) (Pes), Acrylics, Poly(Ethylene Naphthalenedicarboxylate) (Pen)

Note: 1. A patent may disclose more than one substrate or Subtrate material.



[email protected]









68 SAGACIOUS IP



Components (Passivation Layer)

(b)

(a)

Fig: 45 (a & b) Components & Material – Passivation Layer


Patents

Semiconductor

Layer

32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other

Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1


Aluminum 1

Multilayer 1

Photoresist Film 1

Semiconductor Oxide 1

Silicon Nitride 1

Silicon Oxide 2

Silicon Oxynitride 1

Note: 1. A patent may disclose more than one Passivation layer material.



69 SAGACIOUS IP




[email protected]









70 SAGACIOUS IP



Components (Dielectric)

(b)

(a)

Fig: 46 (a & b) Components & Material – Dielectric


Patents

Semiconductor

Layer 32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other

Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1


Silicon Nitride 2

Tantalum Oxide 2

Silicon Oxide 2

Aluminum Oxide 2

Polyvinyl Alcohol 2

Polyimides 2

Tantalum 1

Barium Titanate 1

Zinc Selenide 1

Oxacycloolefinic

Polymer: Ru-

Carbene Catalyzed

Ring-Opening

Metathesis

Polymerization Of A

Bicyclic Oxaolefin.

1

Spin Coating 1

Poly Vinylphenol 1



71 SAGACIOUS IP


Apart from the one shown in table above, following materials for dielectric have also been

mentioned by the patents:

Titanium, Poly(4-Vinylphenol), Barium Strontium Titanium Oxide (Bst), Poly(Vinylidene

Fluoride), Silicon Oxynitride, Polyamides, Strontiates, Zinc Sulfide, Barium Zirconate Titanate,

Zirconium, Titanium Oxide, Polystyrene, Barium Zirconium Titanium Oxide (Bzt), Barium

Strontium Titanate, Alumina And Silicagel, Polymethyl Methacrylate

Note: 1. A patent may disclose more than one dielectric material.



[email protected]









72 SAGACIOUS IP



Components (Active Layer)

(b)

(a)

Fig: 47 (a & b) Components & Material – Active Layer


Patents

Semiconductor

Layer 32

Insulation Layer 10

Conductive Layer 9

Substrate 9

Barrier Layer 7

Dielectric 6

Passivation Layer 6

Other Components 5

Protective Layer 4

Buffer Layer 3

Active Layer 1


Aluminum 1

Galium 1

Hafnium (Hf) 1

Indium 1

Magnesium 1

Polycrystalline 1

Silicon Graphene 1

Ternary Compound 1

Titanium 1

Zinc 1

Zirconium 1

Note: 1. A patent may disclose more than one active layer material.



73 SAGACIOUS IP




[email protected]









74 SAGACIOUS IP


5. Major Players

Analysis.

1. Major players in the domain

2. Major Players-Last Five Years

3. Major Players’ Application Areas

4. Technology Breakup – Major Players

5. Samsung

6. Samsung – Technology Fencing

7. Semiconductor Energy

8. Semiconductor Energy-Technology Fencing

9. LG

10. LG-Technology Fencing

11. Fujifilm

12. Fujifilm-Technology Fencing

13. Fuji Xerox

14. Fuji Xerox – Technology Fencing

15. Toppan Printing

16. Toppan Printing – Technology Fencing

17. Seiko Epson Corporation

18. Seiko Epson Corporation- Technology Fencing

19. Sony

20. Sony – Technology Fencing



75 SAGACIOUS IP


21. BOE Technology

22. BOE Technology – Technology Fencing

23. Canon

24. Canon – Technology Fencing

25. Major Players Citations Analysis – Definition

26. Companies having maximum backward citations

27. Companies having maximum forward citations

28. Major Players – Strength Analysis

29. Collaborations in the domain



76 SAGACIOUS IP


5.1 Major Players Trends

Company

Number of

Patents

Be

fore

20

02

20

02

20

03

20

04

20

05

20

06

20

07

20

08

20

09

20

10

20

11

20

12

20

13

20

14

20

15

20

16

Samsung 608 6 7 45 93 188 99 42 25 17 11 23 15 28 8 0 1

Semiconductor

Energy 156 10 5 4 8 8 3 2 18 31 14 13 21 6 12 1 0

LG 147 3 2 4 5 15 18 17 16 17 6 6 7 16 15 0 0

Fujifilm 120 0 0 0 0 1 0 4 21 14 20 12 13 9 26 0 0

Fuji Xerox 98 3 2 2 9 18 9 6 15 11 8 5 8 2 0 0 0

Toppan Printing 96 0 0 0 4 19 7 12 8 3 7 10 7 12 7 0 0

Seiko Epson 88 5 3 7 21 22 9 10 3 2 6 0 0 0 0 0 0

Sony 81 4 0 3 4 1 3 3 15 16 8 10 10 2 2 0 0

BOE Technology 73 1 0 0 0 0 0 0 1 4 2 8 22 7 16 12 0

Canon 72 3 0 3 13 12 11 14 9 4 2 0 1 0 0 0 0

Panasonic 60

0 0 5 2 1 3 9 6 7 2 10 9 4 2 0 0

Kodak 46 0 0 0 2 6 1 6 1 0 9 5 2 0 14 0 0

Sumitomo

Chemical 44 0 0 1 2 4 2 6 7 8 6 5 2 1 0 0 0

Fig: 49 Patent filing activity of major players.



77 SAGACIOUS IP


Key Highlights:

Canon, Seiko Epson and Sumitomo Chemical have shown less patent filing activity in last

three years.



[email protected]

The analysis is shown only for patents in thin film transistors for flexible electronics. The

complete analysis for any specific assignee is also available on request.




78 SAGACIOUS IP


5.2 Major Players-Last Five Years

Fig: 50 Shows the major players for the last five years. Fig: 51 compares overall major players

and majors players in last five years.

Major Player Overall

Rank

Last 5

year

rank

% of patents

filed in last five

year with respect

to overall patents

BOE Technology 9 1 78.08

Samsung 1 2 8.55

Fujifilm 4 3 40

Semiconductor Energy 2 4 25.85

LG 3 5 27.08

Panasonic 11 9 25

Sony 8 11 17.28

Fuji Xerox 5 16 10.20

Seiko Epson 7 Not in list 0

Canon 10 Not in List 1.38

Fig: 50 Comparison of overall major players and majors players in last five years

Rank Is Decreased

Rank Is Increased



79 SAGACIOUS IP


Fig: 51 Major players for the last five years

Key Highlights:

Shanghai Daoyi Chemical is recent player in the domain that filed all the patents in last 3

years.

Shanghai Jiaotong University filed around 91 % of its patents in last five years.

52

40 38

48

26

14

57

15 16 21 20

14 11

0

10

20

30

40

50

60

Sam

sun

g

Sem

ico

nd

uct

or

Ene

rgy

LG

Fujif

ilm

Top

pan

Pri

nti

ng

Son

y

BO

E Te

chn

olo

gy

Pan

aso

nic

Ko

dak

Shen

zhen

Ch

ina

Star

Op

toel

ectr

on

ics

Tech

no

logy

Pe

kin

g U

niv

ersi

ty

Shan

ghai

Dao

yi C

hem

ical

Tech

no

logy

Shan

ghai

Jia

oto

ng

Un

iver

sity

NO

. OF

PA

TEN

T FA

MIL

IES

Major Players



[email protected]






80 SAGACIOUS IP


5.3 Major Players’ Application

Areas

Major players can utilize their patents in different application areas. Fig: 52 shows the

application areas for patents related to major players in the domain.

Fig: 52 Major Players’ Application Areas

Other Application areas include X-Ray Sensor, Memory, Solid State Image Pickup Device,

Smartcard, IC card, Tags, Personal computers.

Other Displays include Electrochromic Type Display, Particle Rotary Type Display.



[email protected]






81 SAGACIOUS IP


5.4 Technology Breakup – Major

Players

Major players have filed patents for different technologies. The patents are related to specific

components, fabrication methods and properties of thin film transistors. Fig: 53 describes

distribution of patents filed in last three months according to major players and taxonomy

levels I and levels II.

Fig: 53 Technology Break up – Major Players



[email protected]






82 SAGACIOUS IP


5.5 Samsung

Samsung has 24 research and development centers across the globe. They have six centers in

Korea and eighteen others in U.S., U.K., Russia, Israel, India, Japan and China. Despite diverse

research centers, Samsung has filed around 97% of its total patents from Korea itself.

Samsung may commercialize flexible screens for smartphones in 2017. The flexible screen will

be seven inch tablet. The tablet was shown as prototype in CES.

Samsung invested $13.4 billion in 2013 to research and develop new technology. The amount is

around 6.4% of the Samsung’s revenue. The average amount spent on TFTs was around $56

million.

Fig: 54 Samsung – Comparison chart (Filing Trend)

In spite of having filed so many patents, Samsung does not use the PCT route, with negligible

PCT filings over the years.

0

50

100

150

200

250

300

350

400

450

Filling Trend (Priority Date)

Filing Overall INPADOC Patent Families

PCT Applications Wipo-Samsung



83 SAGACIOUS IP


Fig: 55 Samsung –Comparison chart (Research Country)

Fig: 56 Samsung – Comparison chart (Market Geographies)

0

300

600

900

1200

1500

Jap

an

Sou

th K

ore

a

USA

Ch

ina

Taiw

an

Un

ite

d K

ingd

om

Ger

man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Samsung Overall

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

Ger

man

y

Un

ite

d K

ingd

om

Can

ada

Au

stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

ed

erat

ion

Fran

ce

Market Geographies

Samsung Overall



84 SAGACIOUS IP


Fig: 57 Samsung – Comparison chart (Application area)

Fig: 58 Samsung - Patent status

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

EL D

isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Samsung Overall

69%

31%

Patent Status

ALIVE DEAD



85 SAGACIOUS IP


Key Inventors with IPC

Inventor No. of

Patents

H0

1L0

05

10

0

H0

1L0

03

52

4

H0

1L0

02

97

86

H0

1L0

05

14

0

H0

1L0

05

10

5

H0

1L0

02

90

8

H0

1L0

05

13

0

H0

1L0

05

11

0

H0

1L0

02

10

0

H0

1L0

02

13

36

H0

1L0

02

13

1

Lee Sang

Yoon

43 6 10 6 8 5 6 8 4 1 1 3

Suh Min-

Chul

40 12 8 6 7 6 9 4 3 6 4 1

Ahn Taek 29 6 4 13 2 1 3 3 2 3 0 1

Koo Jae-

Bon

26 8 7 7 5 5 4 2 2 5 4 1

Jeong

Eun

Jeong

25 6 7 0 3 1 4 1 1 0 1 1

Koo Bon

Won

24 3 4 7 6 8 1 6 5 0 1 2

Kim Joo

Young

23 8 6 0 2 4 1 2 2 0 1 2

Lee Bang

Lin

23 10 6 3 1 3 3 2 0 0 0 0

Lee Eun

Kyung

20 9 5 0 2 2 1 1 0 0 0 1

Song

Keun-Kyu

20 0 0 4 4 1 1 0 2 2 2 1

Fig: 59 Samsung – Table (Key Inventors)

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

Details Of Devices

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

To Form Insulating Layers Thereon, E.G. For Masking Or By Using Photolithographic Techniques



86 SAGACIOUS IP


Fig: 60 Samsung – Comparison chart (Law firm)

Fig: 61 Samsung – Comparison chart (Last five years law firm)

153

94 82 79 75 69

43 35 32 32

0

20

40

60

80

100

120

140

160

180

Pae

nko

riah

teu

khe

ob

eop

in

Ria

en

mo

kteu

kheo

beo

pin

Inn

ova

tio

n C

ou

nse

l Llp

Har

nes

s D

icke

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Pie

rce

Can

tor

Co

lbu

rn L

lp

F. C

hau

& A

sso

c. L

lc

Mac

ph

erso

n K

wo

k C

he

n &

Hei

d L

lp

Yuki

On

o Y

uki

Man

Liu

, Sh

en &

Ass

oci

ates

Kim

Hak

Ch

e

Samsung Law Firm

18 17

15 14

11

8 8 8 7 7

02468

101214161820

Har

nes

s D

icke

y &

Pie

rce

Pae

n k

ori

a h

teu

kheo

beo

pin

Inn

ova

tio

n C

ou

nse

l LLP

F. C

hau

& A

sso

c. L

LC

YKI P

aten

t C

orp

ora

tio

n

Can

tor

Co

lbu

rn L

LP

Pan

Ko

rea

Pat

en

t &

amp

LEE

IP G

rou

p

Ria

en

mo

kteu

kheo

beo

pin

Grü

ne

cker

Law Firm – Last Five Years



87 SAGACIOUS IP


5.5.1 Samsung– Technology Fencing

Fig: 61 shown below shows the comparison between cited companies and citing companies of

Samsung Electronics.

Fig: 61 Samsung – Comparison chart (Technology Fencing)



88 SAGACIOUS IP




[email protected]






89 SAGACIOUS IP


5.6 Semiconductor Energy

Semiconductor Energy presented prototype for flexible super strong touch screen in 2013 at an

exhibition in Tokyo.

Semiconductor has filed around 33.33% of its total patents in last six years which indicates that

the Semiconductor is consistent and focused towards research and development activity for

thin film transistors.

Fig: 62 Semiconductor Energy – Comparison chart (Filing Trend)

0

50

100

150

200

250

300

350

400

450

Filing Trend (Priority Year)


PCT Applications Wipo-Semiconductor



90 SAGACIOUS IP


Fig: 63 Semiconductor Energy - Comparison chart (Research Country)

Fig: 64 Semiconductor Energy – Comparison chart (Market Geographies)

0

300

600

900

1200

1500

Jap

an

Sou

th K

ore

a

USA

Ch

ina

Taiw

an

EPO

Un

ite

d K

ingd

om

Ger

man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Semiconductor Energy Overall

0

400

800

1200

1600

2000

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an

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91 SAGACIOUS IP


Fig: 65 Semiconductor Energy – Comparison chart (Application area)

Fig: 66 Semiconductor Energy– Patent status

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pla

y

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94%

6%

Patent Status

ALIVE DEAD



92 SAGACIOUS IP



Inventor No. of

Patents

H0

1L0

29

78

6

H0

1L0

27

12

H0

1L0

29

66

H0

1L0

29

10

H0

1L0

29

12

H0

1L0

21

02

H0

1L0

29

45

H0

1L0

21

33

6

H0

1L0

21

00

H0

1L0

29

04

Yamazaki

Shunpei

85 55 39 13 15 12 8 7 11 11 10

Sakata

Junichiro 18 11 7 1 4 5 0 5 2 0 2

Akimoto

Kengo 16 11 5 3 3 1 1 1 3 1 2

Koezuka

Junichi

11 11 5 5 1 0 4 1 1 1 1

Sasaki

Toshinari 11 11 6 3 3 1 3 4 2 1 0

Godo

Hiromichi 9 6 2 2 0 1 2 0 0 2 1

Koyama

Jun

8 4 4 2 1 0 1 0 1 2 1

Okazaki

Kenichi

8 3 5 1 0 0 1 0 0 1 2

Tsubuku

Masashi

8 6 5 0 1 3 1 1 0 0 1

Miyake

Hiroyuki

7 1 6 0 0 1 0 1 0 1 0

Fig: 67 Semiconductor Energy – Table (Key Inventors)

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Types Of Semiconductor Device

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With Semiconductor Regions Connected To An Electrode Not Carrying Current To Be Rectified, Amplified Or Switched And Such Electrode Being Part Of A Semiconductor Device Which Comprises Three Or More Electrodes

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Characterised By The Materials Of Which They Are Formed

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Manufacture Or Treatment Of Semiconductor Devices Or Of Parts Thereof

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Ohmic Electrodes

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Characterised By Their Crystalline Structure, E.G. Polycrystalline, Cubic, Particular Orientation Of Crystalline Planes



93 SAGACIOUS IP


Fig: 68 Semiconductor Energy – Comparison chart (Law firm)

Fig: 69 Semiconductor Energy – Comparison chart (Last five years law firm)

117

47 37

24 21 20 17 13 12 12

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on

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& R

ich

ard

son

P.C

.

Ccp

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t &

Tra

dem

ark

Law

Off

ice

Hw

ang

Eui M

an

Jan

g H

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ne

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Ken

fox

Ip &

Law

Off

ice

Par

k C

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on

g B

um

Hu

sch

Bla

ckw

ell L

lc

Law Firm

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25

11 10 8 6 6 5 4 4

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g H

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an

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sch

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ckw

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lc

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Man

Ken

fox

Ip &

Law

Off

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Jun

g H

ee

Grü

ne

cker

Last Five Years Law Firm



94 SAGACIOUS IP


5.6.1 Semiconductor Energy –

Technology Fencing

Fig: 70 shown below shows the comparison between cited companies and citing companies of

Semiconductor Energy

Fig: 70 Semiconductor Energy – Comparison chart (Technology Fencing)



95 SAGACIOUS IP




[email protected]






96 SAGACIOUS IP


5.7 LG

LG will invest 450 billion Won (USD 395.99 million) in South Korea to build production capacity

for flexible organic light-emitting diode (OLED) displays.

LG presented a display prototype which can be rolled like a paper at consumer electronics show

2016. The technology is on LG’s ongoing research for Oled based flexible display.

Fig: 71 LG – Comparison chart (Filing Trend)

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450



Overall PCT Applications Wipo LG



97 SAGACIOUS IP


Fig: 72 LG – Comparison chart (Research Country)

Key Highlights:

LG display has filed around 30% of its total patents in last five years. Currently LG is

focusing upon creating flexible OLED and curved OLED.

Fig: 73 LG– Comparison chart (Market Geographies)

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an

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an

EPO

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y

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y

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ia

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ce

Sin

gap

ore

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stra

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lan

d

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stri

a

Research Country

LG Overall

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2000

USA

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an

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ore

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Ch

ina

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d K

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om

Can

ada

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stra

lia

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stri

a

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gap

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n F

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Market Geographies

LG Overall Country



98 SAGACIOUS IP


Fig: 74 LG– Comparison chart (Application area)

Fig: 75 LG – Patent Status

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1600

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tro

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ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

LG Overall

82%

18%

Patent Status

ALIVE DEAD



99 SAGACIOUS IP



Inventor No. of

Patents

G0

2F0

00

11

3

G0

2F0

00

11

33

3

G0

2F0

00

11

33

5

G0

2F0

00

11

36

H0

1L0

02

10

0

H0

1L0

02

13

35

H0

1L0

02

13

36

H0

1L0

02

14

0

H0

1L0

02

16

6

H0

1L0

02

18

23

2

H0

1L0

02

71

2

Seo Hyun-Sik 16 0 0 0 8 0 1 0 1 0 1 1

Bae Jong

Uk

11 0 0 0 8 0 0 1 0 0 0 0

Kim Dae

Hwan 10 0 0 0 7 0 0 0 0 1 0 0

Han Chang

Wook 8 0 1 1 0 0 0 1 0 0 0 1

Heo Jae

Seok

8 0 0 0 0 1 0 0 0 0 0 0

Kim Min

Joo 5 1 1 0 2 0 0 0 0 0 0 0

Yim Hoon 5 0 0 0 0 0 0 1 0 0 0 2

Choi Nack-

Bong

4 0 0 0 0 0 0 0 1 0 0 0

Lee Seung

Min

4 0 0 0 0 0 0 0 0 0 0 0

Hae Gee

SungC

4 0 0 0 0 0 0 0 0 0 0 0

Fig: 76 LG – Table (Key Inventors)

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Based On Liquid Crystals, E.G. Single Liquid Crystal Display Cells

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Constructional Arrangements

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Structural Association Of Optical Devices, E.G. Polarisers, Reflectors Or Illuminating Devices, With The Cell

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Liquid Crystal Cells Structurally Associated With A Semi-Conducting Layer Or Substrate, E.G. Cells Forming Part Of An Integrated Circuit

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Characterised By Their Behaviour During The Process, E.G. Soluble Masks, Redeposited Masks

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The Devices Having At Least One Potential-Jump Barrier Or Surface Barrier, E.G. Pn Junction, Depletion Layer, Carrier Concentration Layer

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Field-Effect Technology

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100 SAGACIOUS IP


Fig: 77 LG – Comparison chart (Law firm)

Fig: 78 LG – Comparison chart (Last five years law firm)

26

23 21

19 18 16 15

13 13 12

0

5

10

15

20

25

30

Par

k, K

im &

Par

tne

r

Ro

yal P

aten

t A

tto

rney

Mck

enn

a Lo

ng

& A

ldri

dge

Leco

me

Inte

rnat

ion

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rop

erty

Age

nt

Mo

rgan

Lew

is &

Bo

ckiu

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p

Bri

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on

& L

ion

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e P

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t A

tto

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rin

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Kim

Yo

ng

In

Bei

jing

San

you

Inte

llect

ual

Pro

per

ty A

gen

cy

LG Law Firm

15

13

9

7 6 6

5 5 4

3

0

2

4

6

8

10

12

14

16

Ro

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aten

t A

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me

Inte

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Bei

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San

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Inte

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ual

Pro

per

ty A

gen

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Bri

nks

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on

& L

ion

e

Mo

rgan

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rop

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Gro

up

Ter

Mee

r St

ein

me

iste

r &

Par

tner




101 SAGACIOUS IP


5.7.1 LG – Technology Fencing

Figure 79 shown below highlights the comparison between cited companies and citing

companies of LG.

Fig: 79 LG – Comparison chart (Technology Fencing)



102 SAGACIOUS IP




[email protected]






103 SAGACIOUS IP


5.8 Fujifilm

Fujifilm introduced prototype for flexible speaker along with flexible film used as vibrating

plate.

Fig: 80 Fujifilm – Comparison chart (Filing Trend)

Fig: 81 Fujifilm – Comparison chart (Research Country)

0

50

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200

250

300

350

400

450


Fuji Film Overall INPADOC Patent Families

Overall PCT Applications Wipo LG

0

300

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1500

Jap

an

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ore

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Ch

ina

Taiw

an

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y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

nFe

der

atio

n

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Fujifilm Overall



104 SAGACIOUS IP


Key Highlights:

Fujifilm has been actively involved in research and development related to the thin film

transistors for flexible electronics as around 50% of its total patents are being filed in

last six years.

Fig: 82 Fujifilm– Comparison chart (Market Geographies)

Fig: 83 Fujifilm– Comparison chart (Application area)

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

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man

y

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d K

ingd

om

Can

ada

Au

stra

lia

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stri

a

Bra

zil

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gap

ore

Ru

ssia

n F

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ion

Fran

ce

Market Geographies

Fujifilm Overall

0

400

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LCD

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OLE

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lay

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lays

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D

Elec

tro

ph

ore

tic

Dis

pla

y

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sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Fujifilm Overall



105 SAGACIOUS IP


Fig: 84 Fujifilm – Patent Status


Inventors No. of

Patents

H0

1L0

02

97

86

H0

1L0

02

13

36

H0

1L0

02

71

46

H0

1L0

05

15

0

H0

1L0

02

71

44

H0

1L0

02

96

6

G0

2F0

00

11

36

8

H0

1L0

02

10

2

H0

1L0

02

13

68

H0

1L0

05

10

5

H0

1L0

05

13

0

Takata Masahiro 36 25 0 13 0 8 7 7 5 8 0 0

Suzuki Masayuki 33 29 0 13 7 8 6 5 6 4 4 4

Tanaka Atsushi 33 28 0 13 7 8 7 6 6 4 4 4

Ono Masashi 24 22 0 12 5 7 6 5 5 3 4 4

Mochizuki Fumihiko 13 13 9 7 3 2 3 3 2 1 0 0

Imai Shinji 12 8 3 0 1 1 0 0 1 0 0 0

Takizawa Hiroo 9 9 5 0 0 0 0 0 0 0 8 8

Itai Yuichiro 8 6 1 0 1 0 0 1 0 0 0 0

Nakayama Masaya 8 8 5 0 0 0 0 0 0 0 0 0

Fig: 85 Fujifilm – Key Inventors with IPC

92%

8%

Patent Status ALIVE DEAD

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Imager Structures

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Specially Adapted For Light Emission, E.G. Organic Light Emitting Diodes [Oled] Or Polymer Light Emitting Devices

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Devices Controlled By Radiation

Sagacious IP

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Manufacture Or Treatment Of Semiconductor Devices Or Of Parts Thereof

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106 SAGACIOUS IP


Fig: 86 Fujifilm – Law Firm

Fig: 87 Fujifilm – Law Firm (Last Five Years)

71

33 29

23

14 13 13 12 10 9

0

10

20

30

40

50

60

70

80

Nak

ash

ima

Sun

ao

Ko

rean

a P

aten

t &

Law

Firm

Taiy

o, N

akaj

ima

& K

ato

Miy

amae

& A

sso

ciat

es

Ko

jima

Law

Off

ice

Ho

ffm

ann

Eit

le

Yan

agit

a Ta

das

hi

Sola

ris

Inte

llect

ual

Pro

per

ty G

rou

p

Ion

Pat

ent

Sugh

rue

Mio

n P

llc

Fujifilm Law Firm

32

26 26 23

10 8

6 4 3

1

0

5

10

15

20

25

30

35

Nak

ash

ima

Sun

ao

Taiy

o, N

akaj

ima

& K

ato

Ko

rean

a P

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t &

Law

Fir

m

Miy

amae

& A

sso

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Ion

Pat

ent

Ko

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Off

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Sugh

rue

Mio

n P

llc

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le

Bei

jing

San

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Inte

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ual

Pro

per

ty A

gen

cy

Jian

g Ti

ng

Ch

ina

Scie

nce

Pat

ent

Trad

emar

k A

gen

ts




107 SAGACIOUS IP


5.8.1 Fujifilm – Technology Fencing

Fujifilm has developed its portfolio mainly by citing Semiconductor Energy’s patents. Fig: 88

highlights the technology development of Fujifilm with respect to other players in the domain.

Fig: 88 Fujifilm – Comparison chart (Technology Fencing)



108 SAGACIOUS IP




[email protected]






109 SAGACIOUS IP


5.9 Fuji Xerox

Fuji Xerox is joint venture between Fujifilm and the Xerox.

Fuji Xerox presented electronic paper display without using color filters in 2012. The display had

screen size of around five inches, pixel count of 600*800 and resolution of 200 dpi. The display

used two elementary colors.

Fuji Xerox has lowered down its patent filing in thin film transistor for the last six years as it has

filed only 15.6% of its total patent in the last six years.

Fuji Xerox has active research centers in Japan and United States of America and filed around

30 % and 70% of its pate nt in Japan and United States respectively.

Fig: 89 Fuji Xerox – Comparison chart (Filing Trend)

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50

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150

200

250

300

350

400

450



Overall PCT Applications Wipo Fuji Xerox



110 SAGACIOUS IP


Fig: 90 Fuji Xerox – Comparison chart (Research Country)

Fig: 91 Fuji Xerox – Comparison chart (Market Geographies)

0

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900

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1500

Jap

an

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ore

a

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an

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man

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Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Fuji Xerox Overall

0

400

800

1200

1600

2000

USA

Jap

an

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th K

ore

a

Ch

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an

Ger

man

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ite

d K

ingd

om

Can

ada

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stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

ed

erat

ion

Fran

ce

Market Geographies

Fuzi Xerox Overall Market



111 SAGACIOUS IP


Fig: 92 Fuji Xerox – Comparison chart (Application area)

Fig: 93 Fuji Xerox – Patent Status

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

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isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Fuji Xerox Overall

76%

24%

Patent Status

ALIVE DEAD



112 SAGACIOUS IP



Inventor No. of

Patents

H0

1L0

05

10

0

H0

1L0

05

10

5

H0

1L0

05

13

0

H0

1L0

02

97

86

H0

1L0

03

52

4

C0

8G

00

75

00

H0

1L0

02

90

8

H0

1L0

02

13

36

H0

1L0

05

14

0

C0

8G

00

61

12

H0

1B

00

01

12

Wu

Yiliang

58 26 16 17 4 10 9 9 3 6 4 4

Liu

Ping

39 19 14 12 5 7 8 6 4 4 4 4

Li

Yuning

28 10 2 5 1 6 8 5 1 1 3 0

Ong

Beng S.

24 13 8 8 4 11 3 5 2 3 4 1

Sato

Katsuhiro

14 2 9 8 9 2 0 1 5 3 0 0

Agata

Takeshi

13 2 9 8 9 1 0 1 5 3 0 0

Hirose

Hidekazu

13 2 8 7 8 2 0 1 5 2 0 0

Hu

Nan-Xing

12 5 4 3 0 0 2 1 0 1 0 3

Smith

Paul F.

9 2 0 3 0 0 2 1 1 1 0 0

Wigglesworth

Anthony James

9 5 5 1 0 0 1 1 0 1 0 1

Fig: 94 Fuji Xerox – Table (Key Inventors)

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Macromolecular Compounds Obtained By Reactions Forming A Linkage Containing Sulfur With Or Without Nitrogen, Oxygen, Or Carbon In The Main Chain Of The Macromolecule

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Macromolecular Compounds Containing Atoms Other Than Carbon In The Main Chain Of The Macromolecule

Sagacious IP

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Organic Substances



113 SAGACIOUS IP


Fig: 95 Fuji Xerox – Comparison chart (Law firm)

Fig: 96 Fuji Xerox – Comparison chart (Last five years law firm)

38

23 17 16 14

10 8 7 7 4 4

05

10152025303540

Fay

Shar

pe

Llp

Xer

ox

Grü

ne

cker

Nak

ash

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Sun

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Sim

& M

cbu

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y

Yosh

ida

Ken

zi

Olif

f &

Ber

rid

ge

Yki P

aten

t C

orp

ora

tio

nIn

tern

atio

nal

Pat

en

t Fi

rm

Ken

zi Y

osh

ida

Ku

mak

ura

Yo

shio

Pac

ific

Pat

ent

Att

orn

ey

Fuji Xerox Law Firm

4 4 4

3

2

1 1 1 1 1

0

1

2

3

4

5

Olif

f &

Ber

rid

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Fay

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d &

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Der

zeit

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n V

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eter

Bes

tellt

Lee

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rou

p

Nak

ash

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Sun

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Inte

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ion

al P

ate

nt

Off

ice

Pat

ent

Sola

r B

usi

ne

ssC

orp

ora

tio

n




114 SAGACIOUS IP


5.9.1 Fuji Xerox – Technology

Fencing

Fig: 97 below highlights the comparison between cited companies and citing companies of Fuji

Xerox. Cited companies represent the companies whose patents are cited as backward citations

in the patents of Fuji Xerox.

Fig: 97 Fuji Xerox – Comparison chart (Technology Fencing)



115 SAGACIOUS IP




[email protected]






116 SAGACIOUS IP


5.10 Toppan Printing

Fig: 98 Toppan Printing – Comparison chart (Filing Trend)

Fig: 99 Toppan Printing – Comparison chart (Research Country)

0

50

100

150

200

250

300

350

400

450

Filing Trend ( Priority Year)


Overall PCT Applications Wipo Fuji Xerox

0

300

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900

1200

1500

Jap

an

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th K

ore

a

USA

Ch

ina

Taiw

an

Un

ite

d K

ingd

om

Ger

man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

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rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

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lan

d

Au

stri

aResearch Country

Toppan Printing Overall



117 SAGACIOUS IP


Fig: 100 Toppan Printing – Comparison chart (Market Geographies)

Fig: 101 Toppan Printing – Comparison chart (Application area)

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stri

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gap

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n F

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Fran

ce

Market Geographies


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1600

LCD

Smar

tph

on

e

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OLE

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EL D

isp

lay

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lays

RFI

D

Elec

tro

ph

ore

tic

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pla

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Sen

sor

AM

OLE

D

Oth

er A

pp

licat

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Are

as

Application Areas




118 SAGACIOUS IP


Fig: 102 Toppan Printing – Patent Status


Inventor No. of

Patents

H0

1L0

02

97

86

H0

1L0

02

13

36

H0

1L0

02

12

8

H0

1L0

05

10

5

G0

2F0

00

11

36

8

G0

9F0

00

93

0

H0

1L0

02

94

17

H0

1L0

02

13

16

H0

1L0

02

12

88

H0

1L0

02

94

23

H0

1L0

02

94

9

Matsubara Ryohei 28 23 20 8 14 5 2 7 0 4 2 2

Ishizaki Mamoru 24 20 16 6 8 4 6 2 0 3 2 2

Ito Manabu 21 17 10 5 0 2 2 0 5 0 1 1

Kon Masato 11 10 9 3 0 1 0 1 0 0 2 2

Murata Kodai 10 10 8 2 5 6 2 1 0 0 1 1

Miyazaki Chihiro 9 7 6 2 0 1 2 0 4 0 1 1

Ikeda Noriaki 8 8 7 2 1 4 2 0 4 1 0 0

Imamura Chihiro 7 7 3 5 3 0 1 4 0 2 0 0

Kino Osamu 7 7 4 3 3 1 0 1 0 2 1 1

Nakamura Ryuichi 5 5 4 3 4 0 0 1 0 1 1 1

Fig: 103 Toppan Printing – Table (Key Inventors)

78%

22%

Patent Status

ALIVE DEAD

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Manufacture Of Electrodes On Semiconductor Bodies Using Processes Or Apparatus Not Provided For In H01L21/20 - H01L21/268

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In Which The Desired Character Or Characters Are Formed By Combining Individual Elements

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Carrying The Current To Be Rectified, Amplified Or Switched

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Composed Of Oxides Or Glassy Oxides Or Oxide Based Glass

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From A Liquid, E.G. Electrolytic Deposition

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Not Carrying The Current To Be Rectified, Amplified Or Switched

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Metal-Insulator-Semiconductor Electrodes



119 SAGACIOUS IP


Fig: 104 Toppan Printing – Comparison chart (Law firm)

Fig: 105 Toppan Printing – Comparison chart (Last five years law firm)

26

12 9 8 7

5 5 2 2 1

0

5

10

15

20

25

30

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an P

aten

t O

ffic

eA

nd

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en

t P

ract

ice

Hir

ose

Haz

ime

Squ

ire

San

der

s

Oga

saw

ara

Pat

ent

Off

ice

Taka

has

hi R

inA

nd

op

ato

naz

u C

orp

ora

teP

aten

t P

ract

ice

Shig

a In

tern

atio

nal

Pat

ent

Off

ice

No

da

Pat

ent

Off

ice

Pat

ent

An

do

pat

on

azu

Ntd

Pat

ent

&Tr

adem

ark

Age

ncy

Tee

& H

ow

e In

telle

ctu

alP

rop

erty

Att

orn

eys

Toppan Printing – Law Firm

25

9 8

2 2 1 1 1 1 1 0

5

10

15

20

25

30

Jap

an P

aten

t O

ffic

eA

nd

Pat

en

t P

ract

ice

Hir

ose

Haz

ime

Oga

saw

ara

Pat

ent

Off

ice

Kim

& C

han

g

Ntd

Pat

ent

& T

rad

emar

kA

gen

cy

Tee

& H

ow

e In

telle

ctu

alP

rop

erty

Att

orn

eys

Squ

ire

San

der

s

Squ

ire

Pat

ton

Bo

ggs

No

da

Pat

ent

Off

ice

Inte

rnat

ion

al P

ate

nt

Off

ice

Pat

ent

Sola

r B

usi

ne

ssC

orp

ora

tio

n




120 SAGACIOUS IP


5.10.1 Toppan Printing – Technology

Fencing

Fig: 106 below highlights the comparison between cited companies and citing companies of

Toppan Printing.

Fig: 106 Toppan Printing – Comparison chart (Technology Fencing)



121 SAGACIOUS IP




[email protected]






122 SAGACIOUS IP


5.11 Seiko Epson Corporation

Seiko Epson seems uninterested in the research and development of thin film transistors

because it has not filed even a single patent in last six years.

Seiko Epson presented 200 ppi electronic paper display with resolution of 320 x 240 pixels in

2005.

OMRON acquired semiconductor assets of Seiko Epson subsidiary Yasu Semiconductor

Corporation in 2007.

Fig: 107 Seiko Epson – Comparison chart (Filing Trend)

0

50

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150

200

250

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350

400

450



Overall PCT Applications Wipo -Seiko Epson



123 SAGACIOUS IP


Fig: 108 Seiko Epson – Comparison chart (Research Country)

Fig: 109 Seiko Epson – Comparison chart (Market Geographies)

0

300

600

900

1200

1500

Jap

an

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th K

ore

a

USA

Ch

ina

Taiw

an

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ite

d K

ingd

om

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man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Seiko Epson Overall

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

Ger

man

y

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ite

d K

ingd

om

Can

ada

Au

stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

ed

erat

ion

Fran

ce

Market Geographies

Seiko Epson Overall



124 SAGACIOUS IP


Fig: 110 Seiko Epson – Comparison chart (Application area)

Fig: 111 Seiko Epson – Patent Status

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

EL D

isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Seiko Epson Overall

64%

36%

Patent Status

ALIVE DEAD



125 SAGACIOUS IP



Inventor No. of

Patents

H0

1L0

02

97

86

H0

1L0

05

10

5

H0

1L0

05

15

0

H0

1B

00

01

12

H0

1L0

02

13

36

H0

1L0

05

10

0

H0

1L0

05

13

0

H0

1L0

05

14

0

C0

8F0

29

00

6

C0

7D

02

71

10

H0

1L0

02

12

88

Terao

Koichi 25 17 17 17 16 0 1 7 1 7 6 0

Shinohara

Yuji 23 17 17 17 15 0 0 7 1 7 6 0

Kawase

Takeo 11 9 7 2 0 6 6 0 5 0 0 5

Moriya

Soichi 9 6 4 2 0 3 4 1 3 0 0 2

Aoki

Takashi 8 3 1 0 0 3 1 1 1 0 0 0

Harada

Mitsuaki 7 7 5 2 0 4 4 0 4 0 0 5

Karasawa

Junichi 7 5 3 0 0 3 1 2 2 0 0 0

Kugler

Thomas 5 0 1 0 0 0 3 1 1 0 0 0

Inoue

Satoshi 4 6 0 1 0 5 0 0 0 0 0 0

Sato

Takashi 4 2 0 0 0 1 0 0 0 0 0 0

Fig: 112 Seiko Epson – Table (Key Inventors)

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Organic Substances

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1,3,4-Oxadiazoles; Hydrogenated 1,3,4-Oxadiazoles

Sagacious IP

Comment on Text

From A Liquid, E.G. Electrolytic Deposition



126 SAGACIOUS IP


Fig: 113 Seiko Epson – Comparison chart (Law firm)

Fig: 114 Seiko Epson – Comparison chart (Last five years law firm)

39

24

18

10 9 6 5 5 5 4

0

5

10

15

20

25

30

35

40

45

Tad

ash

i Ho

mar

eK

amiy

anag

i

Olif

f &

Ber

rid

ge

Mas

ud

a Ta

tsu

ya

Asa

hi &

Mas

ud

a

Har

nes

s D

icke

y &

Pie

rce

Inab

a Yo

shiy

uki

Nis

hi K

azu

ya

Mo

on

& M

oo

n In

ten

atio

nal

Mo

on

Ki S

ang

Shig

a In

tern

atio

nal

Pat

ent

Off

ice

Seiko Epson Law Firm

2

1 1

0

0.5

1

1.5

2

2.5

Alg Intellectual Property Zhongzi Law Office Oliff & Berridge




127 SAGACIOUS IP


5.11.1 Seiko Epson Corp –

Technology Fencing


Seiko Epson Corp.

Fig: 115 Seiko Epson – Comparison chart (Technology Fencing)



128 SAGACIOUS IP




[email protected]






129 SAGACIOUS IP


5.12 Sony

Fig: 116 Sony– Comparison chart (Filing Trend)

Fig: 117 Sony– Comparison chart (Research Country)

0

50

100

150

200

250

300

350

400

450

Filing Trend(Priority Date)


Overall PCT Applications Wipo -Sony

0

300

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900

1200

1500

Jap

an

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ore

a

USA

Ch

ina

Taiw

an

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ite

d K

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man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

aResearch Country

Sony Overall



130 SAGACIOUS IP


Fig: 118 Sony– Comparison chart (Market Geographies)

Fig: 119 Sony– Comparison chart (Application area)

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

Ger

man

y

Un

ited

Kin

gdo

m

Can

ada

Au

stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

eder

atio

n

Fran

ce

Market Geographies

Sony Overall Market

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

EL D

isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Sony Overall



131 SAGACIOUS IP


Fig: 120 Sony – Patent Status


Inventor No. of

Patents

H0

1L0

05

10

0

H0

1L0

05

10

5

H0

1L0

05

11

0

H0

1L0

02

97

86

H0

1L0

02

91

0

H0

1L0

02

90

4

H0

1L0

02

90

8

H0

1L0

03

10

0

H0

1L0

02

18

4

H0

1L0

03

52

4

H0

1L0

02

10

0

Morosawa Narihiro 9 1 0 0 2 5 4 1 1 1 1 2

Arai Toshiaki 8 1 0 0 3 2 2 1 1 1 1 0

Yoneya Nobuhide 8 5 5 4 2 1 1 1 1 1 0 0

Katsuhara Mao 6 4 2 1 0 0 0 0 0 0 0 1

Kawashima Noriyuki 5 1 2 0 2 0 0 1 0 0 1 1

Kobayashi Norihito 5 4 3 0 0 0 0 0 0 0 1 0

Nomoto Akihiro 5 2 2 3 1 1 1 1 1 1 0 0

Ushikura Shinichi 5 3 3 3 2 1 1 0 1 0 0 0

Nomoto Kazumasa 4 3 1 1 0 0 0 1 0 1 1 0

Ono Hideki 4 0 1 2 1 0 0 0 0 0 0 1

Fig: 121 Sony– Table (Key Inventors)

66, 82%

18%

Patent Status

ALIVE DEAD

Sagacious IP

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Sagacious IP

Comment on Text


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Details Of Devices

Sagacious IP

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With Semiconductor Regions Connected To An Electrode Not Carrying Current To Be Rectified, Amplified Or Switched And Such Electrode Being Part Of A Semiconductor Device Which

Sagacious IP

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Characterised By At Least One Potential-Jump Barrier Or Surface Barrier, E.G. Phototransistors

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The Substrate Being Other Than A Semiconductor Body, E.G. Being An Insulating Body

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Sagacious IP

Comment on Text




132 SAGACIOUS IP


Fig: 122 Sony– Comparison chart (Law firm)

Fig: 123 Sony– Comparison chart (Last five years law firm)

25

19

13 12

10 9

7 7

4 4

0

5

10

15

20

25

30

Win

gs In

tern

atio

nal

Pat

ent

Off

ice

Pat

ent

Bu

sin

ess

Co

rpo

rati

on

K&

L G

ates

Llp

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amo

to T

akah

isa

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itir

ou

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ton

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lf G

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fie

ld &

Sack

s, P

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Rad

er, F

ish

man

&G

rau

er P

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Ru

le T

he

Lan

d B

rid

ge

East

Inte

llect

ual

Pro

per

ty

D Y

ou

ng

& C

o L

lp

Sony Law Firm

22

13

7 6

4 3 3 3 3

2

0

5

10

15

20

25

Win

gs In

tern

atio

nal

Pat

ent

Off

ice

Pat

ent

Bu

sin

ess

Co

rpo

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K&

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ates

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bas

a P

ate

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Rad

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rau

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Inte

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ual

Pro

per

ty

Snr

Den

ton

Us

Llp




133 SAGACIOUS IP


5.12.1 Sony – Technology Fencing


Sony.

Fig: 124 Sony– Comparison chart (Technology Fencing)



134 SAGACIOUS IP




[email protected]






135 SAGACIOUS IP


5.13 BOE Technology

BOE Technology has filed around 73% of its total patents in last six years indicating its rapid

research and development activity for thin film transistors used in flexible electronics.

BOE developed UHD AMOLED flexible display which utilizes combination of Oxide TFT

backplane technology, white OLED technology, colored -film and matrix substrate integration

technology. BOE also developed 9.55 inch AMOLED flexible display based on Oxide thin film

transistors.

Fig: 125 BOE – Comparison chart (Filing Trend)

0

50

100

150

200

250

300

350

400

450



Overall PCT Applications Wipo -BOE



136 SAGACIOUS IP


Fig: 126 BOE – Comparison chart (Research Country)

Fig: 127 BOE – Comparison chart (Market Geographies)

0

300

600

900

1200

1500

Jap

an

Sou

th K

ore

a

USA

Ch

ina

Taiw

an

Un

ite

d K

ingd

om

Ger

man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

BOE Technology Overall

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

Ger

man

y

Un

ite

d K

ingd

om

Can

ada

Au

stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

ed

erat

ion

Fran

ce

Market Geographies




137 SAGACIOUS IP


Fig: 128 BOE – Comparison chart (Application area)

Fig: 129 BOE – Patent Status

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

EL D

isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area


96%

4%

Patent Status

ALIVE DEAD



138 SAGACIOUS IP



Inventor No. of

Patents

H0

1L0

02

97

86

H0

1L0

02

71

2

H0

1L0

02

13

4

H0

1L0

05

10

5

H0

1L0

02

17

7

H0

1L0

02

13

36

H0

1L0

02

73

2

H0

1L0

05

10

0

H0

1L0

05

11

0

H0

1L0

02

96

6

H0

1L0

05

14

0

Liu Xiang 7 4 3 0 1 0 1 2 1 1 2 0

Zhang

Xuehui

6 0 0 0 4 1 0 3 2 3 0 0

Chen Xu 5 2 2 0 2 1 1 2 1 0 1 1

Liu Ze 5

0 0 0 5 0 0 1 3 3 1 2

Wang

Gang

4 3 2 0 0 0 0 0 0 0 1 0

Xie

Zhenyu

4 1 1 0 1 0 0 1 1 0 1 0

Yuan

Guang-Cai

4 4 3 2 0 1 1 0 0 0 0 2

Lan Lin-

Feng

3 6 2 4 0 3 2 0 0 0 0 0

Peng Jun-

Biao

3 6 2 4 0 3 2 0 0 0 0 0

Wang Lei 3 8 2 4 0 3 4 0 0 0 0 0

Fig: 130 BOE – Table (Key Inventors)

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The Devices Having Semiconductor Bodies Not Provided For In Groups

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Manufacture Or Treatment Of Devices Consisting Of A Plurality Of Solid State Components Or Integrated Circuits Formed In, Or On, A Common Substrate

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With Components Specially Adapted For Light Emission, E.G. Flat-Panel Displays Using Organic Light-Emitting Diodes

Sagacious IP

Comment on Text


Sagacious IP

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Details Of Devices

Sagacious IP

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139 SAGACIOUS IP


Fig: 131 BOE – Comparison chart (Law firm)

Fig: 132 BOE – Comparison chart (Last five years law firm)

30

20

13 11

8 7 6 6 4 4

0

5

10

15

20

25

30

35

Liu

, Sh

en &

Ass

oci

ates

Lad

as &

Par

ry

Zbsd

Pat

ent

&Tr

adem

ark

Age

nt

Mu

raya

ma

Yasu

hik

o

Tdip

& P

artn

ers

Dra

gon

Inte

llect

ual

Pro

per

ty L

aw F

irm

Rie

der

& P

artn

er

Klu

nke

r . S

chm

itt-

Nils

on

.H

irsc

h

Cn

-Kn

ow

ho

wIn

telle

ctu

al P

rop

erty

Age

nt

Lead

er'S

Inte

llect

ual

Pro

per

ty

BOE - Law Firm

30

17

10 10 8 7 6 6 5 4

0

5

10

15

20

25

30

35

Liu

, Sh

en &

Ass

oci

ates

Lad

as &

Par

ry

Mu

raya

ma

Yasu

hik

o

Zbsd

Pat

ent

& T

rad

emar

kA

gen

t

Tdip

& P

artn

ers

Dra

gon

Inte

llect

ual

Pro

per

tyLa

w F

irm

Rie

der

& P

artn

er

Klu

nke

r . S

chm

itt-

Nils

on

.H

irsc

h

Kim

& C

han

g

Cn

-Kn

ow

ho

w In

telle

ctu

alP

rop

erty

Age

nt




140 SAGACIOUS IP


5.13.1 BOE Technology – Technology

Fencing


BOE Technology

Fig: 133 BOE – Comparison chart (Technology Fencing)



141 SAGACIOUS IP




[email protected]






142 SAGACIOUS IP


5.14 Canon

Canon Inc has filed only one patent in last six years which indicates that Canon is no more

interested in developing thin film transistor for flexible electronics.

Fig: 134 Canon – Comparison chart (Filing Trend)

Fig: 135 Canon – Comparison chart (Research Country)

0

50

100

150

200

250

300

350

400

450



Overall PCT Applications wipo- Canon

0

300

600

900

1200

1500

Jap

an

Sou

th K

ore

a

USA

Ch

ina

Taiw

an

Un

ite

d K

ingd

om

Ger

man

y

Ital

y

Ind

ia

Fran

ce

Sin

gap

ore

Po

rtu

gal

Ru

ssia

n F

ed

erat

ion

Au

stra

lia

Fin

lan

d

Au

stri

a

Research Country

Canon Overall



143 SAGACIOUS IP


Fig: 136 Canon – Comparison chart (Market Geographies)

Fig: 137 Canon – Comparison chart (Application area)

0

400

800

1200

1600

2000

USA

Jap

an

Sou

th K

ore

a

Ch

ina

Taiw

an

Ger

man

y

Un

ite

d K

ingd

om

Can

ada

Au

stra

lia

Au

stri

a

Bra

zil

Sin

gap

ore

Ru

ssia

n F

ed

erat

ion

Fran

ce

Market Geographies

Canon Overall Market

0

400

800

1200

1600

LCD

Smar

tph

on

e

LED

OLE

D

EL D

isp

lay

Oth

er D

isp

lays

RFI

D

Elec

tro

ph

ore

tic

Dis

pla

y

Sen

sor

AM

OLE

D

Oth

er A

pp

licat

ion

Are

as

Application Area

Canon Overall



144 SAGACIOUS IP


Fig: 138 Canon – Patent Status


Inventor No. of

Patents

H0

1L0

02

97

86

H0

1L0

02

13

36

H0

1L0

02

90

4

H0

1L0

02

91

0

H0

1L0

02

10

0

H0

1L0

02

94

9

H0

1L0

02

91

2

H0

1L0

05

15

0

H0

1L0

02

13

16

H0

1L0

02

94

17

H0

1L0

02

12

8

Hayashi Ryo 20 7 3 3 5 3 1 3 0 0 0 0

Iwasaki Tatsuya 16 6 1 5 1 1 0 2 1 0 0 0

Sano Masafumi 15 9 4 3 3 2 2 2 2 1 2 2

Itagaki Naho 11 4 1 2 1 2 0 0 0 0 0 0

Yabuta Hisato 11 5 4 0 2 1 1 1 0 2 0 0

Abe Katsumi 10 10 6 1 1 0 1 0 2 3 1 1

Kumomi Hideya 9 6 2 0 0 0 1 1 1 1 1 1

Kaji Nobuyuki 7 3 2 0 1 2 1 0 0 0 0 0

Hayashi Susumu 6 6 4 0 0 0 2 0 3 2 2 2

Nomura Kenji 4 4 1 0 0 0 1 0 1 0 0 1

Fig: 139 Canon – Table (Key Inventors)

78%

22%

Patent Status

ALIVE DEAD

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

With Semiconductor Regions Connected To An Electrode Not Carrying Current To Be Rectified, Amplified Or Switched And Such Electrode Being Part Of A Semiconductor Device Which

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

Metal-Insulator-Semiconductor Electrodes

Sagacious IP

Comment on Text

Characterised By The Materials Of Which They Are Formed

Sagacious IP

Comment on Text


Sagacious IP

Comment on Text

Composed Of Oxides Or Glassy Oxides Or Oxide Based Glass

Sagacious IP

Comment on Text

Carrying The Current To Be Rectified, Amplified Or Switched

Sagacious IP

Comment on Text

Manufacture Of Electrodes On Semiconductor Bodies Using Processes Or Apparatus Not Provided For In H01L21/20 - H01L21/268



145 SAGACIOUS IP


Fig: 140 Canon – Comparison chart (Law firm)

Fig: 141 Canon – Comparison chart (Last five years law firm)

62 57

30 24 22

13 6 5 5 4

0

10

20

30

40

50

60

70

Fitz

pat

rick

Cel

la, H

arp

er &

Scin

to

Oka

be

Inte

rnat

ion

al L

awO

ffic

e

Can

on

Ccp

it P

aten

t &

Tra

dem

ark

Law

Off

ice

Wes

er &

Ko

llege

n

Kw

on

Tae

Bo

k

Tbk

Kei

zo N

ish

iyam

a

Wat

anab

e N

ob

oru

Yam

ash

ita

Yuta

ka

Canon - Law Firm

12

7

1 1

0

2

4

6

8

10

12

14

Okabe International LawOffice

Fitzpatrick Cella, Harper& Scinto

Westerman, Hattori,Daniels & Adrian, LLP

Canon




146 SAGACIOUS IP


5.14.1 Canon – Technology Fencing

Fig: 142 below highlight the comparison between cited companies and citing companies of

canon

Fig: 142 Canon – Comparison chart (Technology Fencing)



147 SAGACIOUS IP




[email protected]






148 SAGACIOUS IP


5.15 Companies having maximum

forward citations

Most citing companies are the companies having maximum number of forward citations.

Fig: 145 Shows the companies citing the patents in the current portfolio of the technology

domain. The bars in blue represent the number of patents in landscape analysis which have

forward citations. The bars in red represent number of forward citations owned by

representative company.

Fig: 145 Companies having maximum forward citations



149 SAGACIOUS IP




[email protected]






150 SAGACIOUS IP


5.16 Companies having maximum

backward citations

Companies having maximum backward cited patents of landscape analysis of the technology

domain. The bars in blue show the number of patents in landscape analysis who have cited the

patents of corresponding company. The bars in red show the number of patents of the

corresponding companies cited by the patents in the overall set.

Samsung has developed its technology over diverse set of patents as can be seen from fig while

3M innovative, Kodak have developed in confined an area.

Fig: 146 Companies having maximum backward citations



151 SAGACIOUS IP




[email protected]






152 SAGACIOUS IP


5.17 Major Players – Comparative

Analysis – R&D

Major players can be further evaluated on the basis of various factors such as number of

inventors, number of patents and number of alive patents as shown in fig: Samsung dominates

all the major players in the listed factors.

Fig: 147 Major Players comparative analysis



153 SAGACIOUS IP


Samsung:

High number of inventors in this domain, coupled with high number of inventors /

patent and low patents / inventor, can indicate that no focused group is working on TFT

for Flexible Electronics.

SEL, Kodak, Canon and Fuji Xerox:

High number of inventors per patent, lower number of total inventors, and a high self-

citation %age indicates that these companies have a good, core R&D team that is

focused on developing the TFT technology in a specific direction.

Toppan Printing:

Smaller team, High number of patents per inventor, and low self-citation %age indicates

that the R&D personnel at Toppan are working independently and developing multiple

new inventions.



[email protected]




154 SAGACIOUS IP


5.18 Major Players – Portfolio

Strength Analysis

Fig: 148 Major Players – Portfolio Strength Analysis

Canon and Kodak have strong patent portfolios, including most of the top cited patents in the

domain.

Surprisingly, Samsung, SEL and LG that have highest number of patents with good average

strength, do not have top cited patents in the domain.



155 SAGACIOUS IP




[email protected]






156 SAGACIOUS IP


5.19 Major Players – Comparative

Analysis

Fig: 149 Major Players – Comparative Analysis

In light of the R&D team analysis chart and this comparative market analysis chart, it is

becoming evident that SEL and Canon are taking the necessary steps in developing technology

related to TFT in flexible electronics and protecting it globally.



157 SAGACIOUS IP




[email protected]






158 SAGACIOUS IP


5.20 Collaborations in the domain

Major players are collaborating to further enhance their technologies. Most of the

collaborations are between universities. Fig: 150 Highlights the major collaborations in the

domain.

Companies Number of

patents

Tsinghua University, Beijing Visionox Technology 7

Tsinghua University, Hon Hai Precision Industry 4

Tsinghua University, Kunshan Visionox Display 3

Kunshan Visionox Display, Beijing Visionox

Technology 3

Hitachi, Panasonic 5

Samsung, Industry-Academic Cooperation

Foundation Yonsei University

3

Sumitomo Chemical, Osaka University 3

Fig: 150 Collaboration in the domain



159 SAGACIOUS IP


Fig: 151 Comparison chart – Most collaborating companies

12

11

11

11

10

10

7

6

6

0 3 6 9 12 15

Panasonic

Nippon Kayaku Co Ltd

Tokyo Institute of Technology

Tsinghua University

Sumitomo Chemical Company Limited

Samsung

Beijing Visionox Technology

Hiroshima University

South China University of Technology

Most Collaborating Companies



[email protected]




160 SAGACIOUS IP


6 Contact For

Enquiries.



161 SAGACIOUS IP


7 Methodology.

Step I

Understating - Sagacious developed a thorough understanding of the technology area.

Output - Rough Sketch of the Deliverable and Project Plan.

Step 2

Searching - Based on the expected output for project, Sagacious generated a list of keywords to

prepare a comprehensive search strategy that covers all the aspects pertinent to the project.

Further, this search strategy was used to perform patent searches on Questel Orbit and

Thomson Innovation patent databases. The search results obtained were reduced to one

member per patent family prior to analysis.

Output - A list of patents for screening and categorization.

Step 3

Patent Screening- During this step, the patents were filtered based on Title, Abstract & Claims

and were marked as relevant and non-relevant.

Output - A list of relevant patents and categorization of relevant patents filed in last three

months according to taxonomy.

Step 4

Deliverable Preparation - All the data obtained for the search was compiled and presented in

an MS Excel document and MS PowerPoint document.

Output - Deliverable of Analysis.



162 SAGACIOUS IP


Relevance Criteria

Relevant Patents

Patents/Applications explicitly disclosing

Any system (and/or method) disclosing fabrication for thin film transistor

Any system (and/or method) disclosing composition specifically used for manufacturing

thin film transistors

Any system (and/or method) disclosing substrates, thin films, gate electrodes, etc. which

are specifically used for manufacturing thin film transistors

Any system (and/or method) disclosing a display device, LCD, LED which also disclose in

claims about the methods for manufacturing thin film transistor..

Note: The patents are considered relevant only if they disclose in the specification that the thin

film transistors are used for flexible electronics such as camera, scanner, phone, displays, etc.

Non-Relevant Patents

Patents/Applications which do not disclose thin film transistors manufacturing method,

composition for thin film transistors, manufacturing methods for components, etc.



163 SAGACIOUS IP


8 References.

1. http://www.marketsandmarkets.com/PressReleases/flexible-electronics.asp

2. http://gadgets.ndtv.com/science/news/new-thin-film-transistor-may-lead-to-flexible-

electronics-800716

3. http://www.samsung.com/us/aboutsamsung/samsung_electronics/business_area/rd_p

age/

4. http://www.digitaltrends.com/mobile/samsung-flexible-2017-rumor/

5. https://news.samsung.com/global/samsung-electronics-no-2-in-global-rd-spending-

among-all-industries

6. http://www.dailymail.co.uk/sciencetech/article-2814136/Foldable-screens-step-closer-

Super-flexible-super-strong-touchscreen-demonstrated-Japan.html

7. http://retail.economictimes.indiatimes.com/news/consumer-durables-and-information-

technology/consumer-electronics/lg-display-to-nvest-usd-400-million-in-south-

korea/52041417

8. http://www.lgdisplay.com/eng/product/technology/flexibleDisplay

9. http://www.theverge.com/2016/1/3/10706180/lg-rollable-display-flexible-screen-

announced-ces-2016

10. http://www.bbc.com/news/technology-35230043

11. http://www.extremetech.com/electronics/147441-move-over-flexible-screens-fujifilm-

shows-off-the-flexible-speaker

12. http://phys.org/news/2012-06-fuji-xerox-e-paper-filter.html

13. http://www.toppan.co.jp/en/news/2009/12/newsrelease1014.html

14. http://www.printedelectronicsnow.com/contents/view_online-exclusives/2013-03-

06/toppan-printing-plastic-logic-collaborate-on-

15. http://techon.nikkeibp.co.jp/english/NEWS_EN/20050530/105227/

16. http://www.omron.com/media/press/2007/03/e0330.html

http://www.marketsandmarkets.com/PressReleases/flexible-electronics.asp

http://gadgets.ndtv.com/science/news/new-thin-film-transistor-may-lead-to-flexible-electronics-800716

http://gadgets.ndtv.com/science/news/new-thin-film-transistor-may-lead-to-flexible-electronics-800716

http://www.samsung.com/us/aboutsamsung/samsung_electronics/business_area/rd_page/




http://www.digitaltrends.com/mobile/samsung-flexible-2017-rumor/



https://news.samsung.com/global/samsung-electronics-no-2-in-global-rd-spending-among-all-industries



http://www.dailymail.co.uk/sciencetech/article-2814136/Foldable-screens-step-closer-Super-flexible-super-strong-touchscreen-demonstrated-Japan.html



http://retail.economictimes.indiatimes.com/news/consumer-durables-and-information-technology/consumer-electronics/lg-display-to-invest-usd-400-million-in-south-korea/52041417



http://www.lgdisplay.com/eng/product/technology/flexibleDisplay

http://www.lgdisplay.com/eng/product/technology/flexibleDisplay

http://www.theverge.com/2016/1/3/10706180/lg-rollable-display-flexible-screen-announced-ces-2016



http://www.bbc.com/news/technology-35230043

http://www.bbc.com/news/technology-35230043

http://www.extremetech.com/electronics/147441-move-over-flexible-screens-fujifilm-shows-off-the-flexible-speaker



http://phys.org/news/2012-06-fuji-xerox-e-paper-filter.html

http://phys.org/news/2012-06-fuji-xerox-e-paper-filter.html

http://www.toppan.co.jp/en/news/2009/12/newsrelease1014.html

http://www.toppan.co.jp/en/news/2009/12/newsrelease1014.html

http://www.printedelectronicsnow.com/contents/view_online-exclusives/2013-03-06/toppan-printing-plastic-logic-collaborate-on-



http://techon.nikkeibp.co.jp/english/NEWS_EN/20050530/105227/

http://techon.nikkeibp.co.jp/english/NEWS_EN/20050530/105227/

http://www.omron.com/media/press/2007/03/e0330.html

http://www.omron.com/media/press/2007/03/e0330.html



164 SAGACIOUS IP


17. http://www.sony.net/SonyInfo/News/Press/201005/10-070E/

18. http://company.boe.com/portal/en/chuangxinkeji/boechuangxin/wenzhangxiangqing/d

ynamic/pecbwd264.html

19. http://www.kodak.com/US/en/corp/flexDisplay/index.jhtml

http://www.sony.net/SonyInfo/News/Press/201005/10-070E/

http://www.sony.net/SonyInfo/News/Press/201005/10-070E/

http://company.boe.com/portal/en/chuangxinkeji/boechuangxin/wenzhangxiangqing/dynamic/pecbwd264.html



http://www.kodak.com/US/en/corp/flexDisplay/index.jhtml

http://www.kodak.com/US/en/corp/flexDisplay/index.jhtml

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