experience with parallel optical link for the cdf silicon detector
DESCRIPTION
Experience with Parallel Optical Link for the CDF Silicon Detector. S. Hou for the DOIM group Academia Sinica, Taiwan. Introduction. DOIM: D ense Optical Interface Module Byte-wide parallel optical link 8-bits + clock 53 Mbyte/sec, BER 10 -12 Transmitter : Laser-diode array - PowerPoint PPT PresentationTRANSCRIPT
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VERTEX 2002
Experience with Parallel Optical Linkfor the CDF Silicon Detector
S. Hou for the DOIM groupAcademia Sinica, Taiwan
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VERTEX 2002
Introduction
DOIM: Dense Optical Interface Module Byte-wide parallel optical link
8-bits + clock53 Mbyte/sec, BER10-12
Transmitter :Laser-diode arrayASIC driver chip
Receiver :PIN-diode arrayASIC receiver chip
Multi-mode fiber ribbon
Laser, Electrical characteristics Bit-error rate test Aging test Radiation Hardness Implementation in CDF
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VERTEX 2002
Transmitter: Laser diode
InGaAs/InP Edge-emitting laser diode :1550 nm wavelength12-ch diode array (9 used)250 m pitch20 mA/channel
Cleaved mirrorsFacet coating
Bare laser power: 1 mW/ch @20mAInsertion to fiber: 200 ~ 800 W/ch
Fabrication byChunghwa Telecom Telecommunication Laboratories
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VERTEX 2002
Transmitter: driver ASIC
Custom design, biCMOS 0.8 m,AMSbipolar transistors only
Inputs :Diff. ECL or LVDS signals compatibledifferential 100 mVEnable by TTL low
Nine channels :Vcc-VLD across output transistor, 50 , laser control current consumption
At 3V, 20mA/ch nominal ~2mA/0.1V adjustable slope
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VERTEX 2002
Transmitter assembly Die-bond / Wire bond
laser-diode array on BeO submountdriver chip on substratefibers on V-groove
Alignmentfibers to laser emitting facets
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VERTEX 2002
Receiver : PIN & ASIC InGaAs/InP PIN diode :
12-ch array, matching laser diode wavelengthby TL, Chunghwa Telecom.
Operation condition :50 ~ 800 W on, 10 W off1.1 W/module
Outputs :differential ECL, nine independent channels
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VERTEX 2002
Receiver assembly Die-bond / Wire bond
PIN-diode array on Al2O3 submountdriver chip on substratefibers on V-groove
Alignment, fibers to PIN-diodes
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VERTEX 2002
Assembly procedure
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VERTEX 2002
Transmitter characteristics Transmitter tests :
L-I-V and temperature 50 MHz diff. Inputs, 2.5V common mode 100 mV, 50% +DcycLaser light MT-12ST fanout & Tek O/E probe
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VERTEX 2002
Laser diode: L-I-V
Laser light at 20, 30, 40oCwater-bath chiller precision ~0.1oCmeasured at substrate
I-V little temperature dependenceapproximately linear
L-V Drop with temperature
Duty cyclediff. Input 50%stable, little offset to 50%
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VERTEX 2002
Laser diode: temperature
Light power vs. Temperature Measured in stable cooling/heating process
Temperature at substrate precision ~0.1oC
Approximately linear drop to temperature
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VERTEX 2002
Receiver response
Receiver connected to a Transmitter Light power chosen forwide distribution
Light pulse width are consistent
Receiver ECL outputsby a Tektronix diff. probe
Consistent duty cycles in favored operation range (2.8~3.2V)
Saturates for high light level
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VERTEX 2002
Transmitter uniformity : light outputs
Production transmitterslight from pigtail at 30oCwide deviation channel-by-channelmainly due to insertion efficiency
Span within ~400 W ~72 W to the mean/module
Effect operation dynamic range in threshold, saturation limit
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VERTEX 2002
Transmitter uniformity : light pulse widths
Ch-Ch Light power deviationIs approximately a const. scaling factorL-V linear fit, normalized slope to L(3V) indep. of light power
Light pulse width is uniform, ~1%, indep. of light power
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VERTEX 2002
Receiver uniformity : ECL duty cycles
Two production batchesmonitored at 550 W & 970 Wlight pulse width 45%
ECL duty cycle is uniform48.1% at 550 W, (2nd batch)=0.7% 4% wider in 1st batch due to chip tuning
Wide light input range Saturation monitored at 970 W
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VERTEX 2002
Receiver uniformity : duty cycle deviation
Input lights~950 W, width 45% for all channels
ECL outputs of a module deviation to the mean ~1.5% for both batches
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VERTEX 2002
Bit-Error Rate test
BERT by FermilabPC ISA boards TTL toTbert, Rbert boards
At 63 MHz, minimum BER 10 –12
Burn-in 3-days on ASICs, diodes 1-day BERT
reject devices infant mortality bad components fail quickly
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VERTEX 2002
Accelerated Aging test
4 transmitters at 60oC, 330 days
Wear-out degradation0.15 0.08 W/day at 60oCno failure
Accelerating factor F=exp(Ea/ kb) (1/T1 –1/T2)F=29 for T= – 5oC
Failure due to light degradationMin transmitter spec 200 Wdown below receiver threshold 50 W~100 days at 60oC, or 8 years at – 5oC
90% C.L. for 0 failure, P=0.064 upper limit = 40 ch. In 3 years
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VERTEX 2002
INER 30 MeV proton Irradiation
CDF requirement : 200 kRad tolerance INER test beam : transmitter in DC mode. fiber connection out of beam area, measuring L, T versus dose.
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VERTEX 2002
Bulk damage, annealing
Bulk damage dominant, linear dep. to dose Ratio of light drop is consistent for a module, indep. of light power Degradation 10% for 200 kRad
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VERTEX 2002
UC Davis 63.3 MeV proton UC Davis test beam : 10 transmitters on two Port Cards Examined after 200, 400 kRad, for L I, V measurements Light degradation ~10% for 200 kRad Similar I-V, L-V characteristics after irradiation,
slope for L vs. V degrades similarly.
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VERTEX 2002
DOIM implementation : transmitters
Transmitters on Port Cards
Total 570 transmitters
128 Port Cards,
5 transmitter each board
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VERTEX 2002
DOIM implementation : receivers
Receivers on FTM
10 receivers on each board, reading 2 Port Cards
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VERTEX 2002
Status
570 pairs implemented
~10 % bit-error flaggedexcess light at -5oCoptical reflection, contactelectrical pin contact2% has fatal damage
is improving
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VERTEX 2002
Summary
DOIM, a byte-wide optical link is implemented in CDF
Edge-emitting laser light linear to I-V and T
Laser-diode array coupling to pigtail fibers large deviation a major disadvantage
Radiation tolerance is high bulk-damage dominant linear degradation to dose