euv high-na scanner to extend euv single exposure · public quotes from major customers on euv...

Jan van Schoot1, Eelco van Setten1, Gerardo Bottiglieri1, Kars Troost1,

Sascha Migura3 , Bernhard Kneer3, Jens Timo Neumann3, Winfried Kaiser3

15 June 2016, EUVL Workshop, Berkeley

EUV High-NA scanner to extend EUV single exposure

Public

1 ASML Veldhoven, The Netherlands 2 ASML Wilton, CT, USA

3 Carl Zeiss Oberkochen, Germany

Public quotes from major customers on EUV adoption

Sources: Transcript, Intel Credit Suise Media conference, Brian Krzanich, December 2015, Source: Transcript, TSMC Q1 2016 earnings call, Mark Liu, April 2015, Joshua Ho,

Anand tech, “Samsung Foundry Updates: 7 nm EUV, 10 LPP, and 14LPC, April 22 2016

Brian Krzanich CEO Intel

Mark Liu, Co-CEO TSMC

EUV to shorten time to yield

in the next 5 yrs

EUV will be adopted for

production at N5

Intend do deploy EUV for 7

nm

25 February 2016

Slide 2

Public

DRAM Logic 55 WpH 125 WpH 185 WpH 145 WpH

NXE:3300B

NXE:3350B

NXE:3450C

High NA

7

3.0/5.0 nm

1.4/<2.0 nm

7.0 nm

2.5 nm

DCO/MMO OPO

110 nm

60 nm

Focus

NXE extension roadmap to optimize capital efficiency

1.0/<1.4 nm 1.5 nm <40 nm

1.5/2.5 nm 3.5 nm 70 nm

1.2/<1.7 nm 2.0 nm 50 nm

R&D

D1M

D1L

SNEP 3350B

NXE:3400B 5

<D1L

3.x

20% PFR illuminator

2~2.5

Products under study

D1H

2017

2015

2013

Roadmap: Nov 2015

1st

Shipment

22 nm

13 nm

<8 nm

16 nm

13 nm

Half pitch

UVLS

OFP 3350B3400B

UVLS – Mk2

SMASH – MkX

Anamorphic lens

Stages, handlers

Lens thermal

25 February 2016

Slide 3

Public

25 February 2016

Slide 4

Public

#Critical exposures for critical logic Further reduction of # exposures using EUV 0.55 NA

Source: Luc van den Hove, IMEC, ”Technologies for the intuitive internet of everything”, ITPC 2015,

High-

NA

ArF triple patterning

EUV single patterning

High-

NA

Larger NA reduces Local CDU Due to larger aerial image contrast

Jo Finders et al, SPIE 2016

0.33NA

0.55NA

Non-CAR resist, Quasar Illumination

25 February 2016

Slide 5

Public

0

20

40

60

80

100

120

140

160

180

200

10 12 14 16 18 20 22 24

Effe

ctiv

e T

PT

[wf/

hr]

(Final) Half Pitch [nm]

LCDU = 2.0nm 0.33

LCDU = 2.0nm 0.55

Larger NA results in higher effective throughput NA limits dose and # of LE steps

LE^2 LE^3

0.55NA @ 500W

0.33NA @ 350W

* Effective throughput = throughput / # LE steps

*

Quasar Illumination

25 February 2016

Slide 6

Public

Overview main System Changes High-NA tool

Source

• Increased power

Lens

• NA 0.55, high transmission

• Improved Thermal Control

Mask Stage

• 4x current acceleration

• Same for REMA

Wafer Stage


Illuminator

• Improved

transmission New Frames

• Larger to

support Lens

29 September 2015

Slide 7

Public

Improved leveling


Source

• Increased power

Lens



Mask Stage


• Same for REMA

Wafer Stage


Illuminator

• Improved


• Larger to

support Lens

29 September 2015

Slide 8

Public

Improved leveling

Lens



EUV: it’s all about the angle High-NA comes with large angles

ML reflection MoSi Multilayer

25 February 2016

Slide 9

Public

NA=0.5

30deg!!

EUV Optical Train

intermediate focus

collector

Reticle (mask)

wafer

plasma

illuminator

field facet mirror

pupil facet mirror

projection

optics

source

25 February 2016

Slide 10

Public

W. Kaiser, J. van Schoot, Sematech Workshop on High-NA, 9 July 2013

Two key-area’s

where High-NA

imposes large

angles

projection optics Mag=4

w

effective line

width

Small angle

~1

20

nm

4x10nm = 40nm

Simple model of the optical column

Bending out the light cones at the mask reduces contrast strongly

j

illumination optics

source

mask

wafer

Large angle

effective line

width

w

We have to limit the

angles on the mask!

increase magnification

𝑁𝐴𝑚𝑎𝑠𝑘 =𝑁𝐴𝑤𝑎𝑓𝑒𝑟

𝑀𝑎𝑔

25 February 2016

Slide 11

Public

NAwafer

NAmask

Image contrast increases with a larger magnification But only needed in one orientation

NXE:3300

requirement

0

1

2

3

4 5 6 7 8

Magnification

Horizontal Lines

13 nm L/S, 0.33 NA (k1=0.318)

NIL

S*

8 nm L/S, 0.55 NA (k1=0.326)

High-NA tool

*NILS = Normalized Image Log Slope,

measure for image contrast

4 5 6 7 8

Magnification

Vertical Lines

NIL

S*

0

1

2

3

13 nm L/S, 0.33 NA (k1=0.318)

8 nm L/S, 0.55 NA (k1=0.326)

Anamorphic

magnification needed

for High-NA

25 February 2016

Slide 12

Public

J. Van Schoot, et al, “EUV lithography scanner for sub-8nm resolution,” Proc. SPIE 9422, (2015).

pupil

scan

wafer

scan

reticle

scan

• Anamorphic optics half field:

8x Magnification in scan

4x Magnification in other direction

• Chief ray angle ok Imaging ok

High-NA >0.5NA 4x/8x anamorphic magnification Chief Ray Angle at Mask can be maintained

Pupil-in

scan

Pupil-out

The pattern at the

mask needs to change

25 February 2016

Slide 13

Public

Mask

Wafer

Lens

High-NA Anamorphic Lens prints a half field By utilizing the current 6” mask

Mask

field

size

Wafer

field

size

104 mm

13

2 m

m

4x

26 mm

33

mm

4x Conventional lens

Full Field (FF)

HF

26 mm

16

.5 m

m

New

Half Field (HF)

QF

104 mm

13

2 m

m

4x/8x

Note: rectangular slit shown for illustration purposes

FF

25 February 2016

Slide 14

Public

Anamorphic optics are used in cinematography “Don’t change the mask”

Anamorphic

Camera

Anamorphic

Projector

“The Mask”

(24x36mm2)

16x9 16x9

25 February 2016

Slide 15

Public

B. Kneer, et al, “EUV lithography optics for sub-9nm resolution,” Proc. SPIE 9422, (2015).

NA 0.25 NA 0.33 NA >0.5 Design examples Wafer

level

Reticle

level

Extreme aspheres enabling

further improved wavefront /

imaging performance

Big last mirror driven by

High NA

Tight surface specifications enabling

low straylight / high contrast imaging

25 February 2016

Slide 16

Public

High-NA optics design concepts available Larger elements with tighter specifications, no showstoppers

Imaging verification of the new Half Field concept

Aerial Image Intensity in Hyperlith

Logic N5 clip Metal-1, 11nm lines, SMO is done at 8x

FF QF HF

Note: pictures at same scale,

smaller mask reflection is

also visible

25 February 2016

Slide 17

Public

Angles and

angular spread

decrease

ob

scu

red

25 February 2016

Slide 18

Public

High-NA optics has ~2x transmission Smaller angles enable transmission gain vs non-obscured NA 0.33

un

ob

scu

red

And even better:

The smaller angular

range increases the

transmission

Substrate

Standard EUV coatings cannot

handle these large angles

25 February 2016

Slide 19

Public

Proven imaging performance with High-NA optics

Spaces through pitch with small annular illumination

• Start pitch: 24nm for high-NA, 40nm for NA 0.33 k1 = 0.49 in both cases. • Anamorphic high NA w/ central obscuration: comparable exposure latitude, @ smaller pitches. • Lower Best Focus variation for high NA.

HighNA obscured pupil

wafer


Source

• Increased power

Lens



Mask Stage


• Same for REMA

Wafer Stage


Illuminator

• Improved


• Larger to

support Lens

29 September 2015

Slide 20

Public

Improved leveling

Illuminator

• Improved

transmission

Principle NXE:3300/3400 illuminator can be reused For anamorphic lithography pupil facet mirror becomes asymmetric

Intermediate

Focus

Field Facet Mirror

Pupil Facet Mirror

25 February 2016

Slide 21

Public


Source

• Increased power

Lens



Mask Stage


• Same for REMA

Wafer Stage


Illuminator

• Improved


• Larger to

support Lens

29 September 2015

Slide 22

Public

Improved leveling

Mask Stage


• Same for REMA

Wafer Stage


High-NA anamorphic Half Field concept

Half Field yields 2x more fields

• 2x wafer stage acceleration maintains

overhead while going to twice number

of scans

Y-magnification 4x 8x

• 2x wafer acceleration results in 4x

mask acceleration

Faster stages enable high productivity

Full Fields Half Fields

Acceleration of wafer stage ~2x

Acceleration of mask stage ~4x

25 February 2016

Slide 23

Public

0

5

10

80

110

140

170

200

0 1 2 3 4

Rela

tiv

e R

MS

RS

Po

wer

Th

rou

gh

Pu

t [w

ph

]

Relative RS acceleration in Y-direction

0

5

10

80

110

140

170

200

0 1 2 3 4

Rela

tiv

e R

MS

RS

Po

wer

Th

rou

gh

Pu

t [w

ph

]


0

5

10

80

110

140

170

200

0 1 2 3 4

Rela

tiv

e R

MS

RS

Po

wer

Th

rou

gh

Pu

t [w

ph

]


High-NA Mask Stage solution for increased acceleration Improved motor technology & different architecture

185

125

ref

870%

390%

∞!

Further Optimizing power

consumption:

• New stage architecture with

lower mass

Limiting increasing power by:

• Improved motor technology (k, R)

• Reduce mass

Current RS in High-NA

Power: ref

Current RS

No solution

Improved RS motor

Power: 9 x ref

x

x

x x x x

4x

25 February 2016

Slide 24

Public

Power ~ 𝐼2 ∙ 𝑅

= 𝑘 ∙ 𝑎𝑐𝑐 ∙ 𝑚𝑎𝑠𝑠 2 ∙ 𝑅𝑚𝑜𝑡𝑜𝑟

Courtesy Chris Hoogendam, ASML

High-NA Field and Mask Size productivity 500W enables throughput of >150wph with anamorphic HF

High-NA Half Field scanner

needs 500W for

150wph at 60mJ/cm2

Thro

ugh

pu

t [3

00

mm

/hr]

Source Power/Dose [W/(mJ/cm2]

Throughput for various source powers and doses

0

20

40

60

80

100

120

140

160

180

200

0 5 10 15 20 25 30 35

500 Watt

60mJ/cm2

500W Watt

30mJ/cm2

NXE:3300

WS, RS current performance

WS 2x, RS 4x

HF

High NA anamorphic

FF

25 February 2016

Slide 25

Public


Source

• Increased power

Lens



Mask Stage


• Same for REMA

Wafer Stage


Illuminator

• Improved


• Larger to

support Lens

29 September 2015

Slide 26

Public

Improved leveling Improved leveling

High-NA calls for tight focus control High-NA scanner will be introduced in line with focus scaling

focus control budget

at introduction

25 February 2016

Slide 27

Public

𝐷𝑜𝐹 = 𝑘2

λ

𝑁𝐴2

Rayleigh

k2 = 1

NXE:3300

High-NA

Focus latitude scales according expectation

Spaces through pitch with small annular illumination

Focus [nm] -50 0 -50 -25 25

1.0

1.8

I 0 [

a.u

.]

NA 0.55, 12nm spaces

1.4

1.6

1.2

Focus [nm] -75 -150 0 -150 75

1.0

1.8

I 0 [

a.u

.]

NA 0.33, 20nm spaces

1.4

1.6

1.2

25 February 2016

Slide 28

Public

150nm 50nm

Overlapping process window @ 8%EL 45nm

• Combined set of 4 building blocks, 24nm minimum pitch

• Annular illumination used

• Overlapping process windows calculated

NA=0.55, Random cuts, 24nm minimum pitch 25 February 2016

Slide 29

Public

Cutmask Building Blocks Overlapping PW

Focus [nm]

Do

se

[a

.u.]

-30 -20 -10 0 30 20 10

0.95

1.00

1.05

1.10

1.15 Exposure Latitude vs DoF

DoF [nm]

Exp

osu

re L

ati

tud

e [

%]

0 30 20 10 60 50 40 0

6

4

2

12

10

8

14

High-NA system has smaller M3D effects than 0.33NA

Smaller mask angles of incidence due to anamorphic system

(4x)

*L. de Winter, Understanding the Litho-impact of Phase due to 3D Mask-Effects when using off-axis illumination, EMLC 2015

Two-bar trenches are a

canary for M3D effects

25 February 2016

Slide 30

Public

Way forward to 30 nm focus control

3300

performance

Machine

improvements

(level sensor,

stages, etc.)

Optics

improvements

Product wafer

flatness

Fo

cu

s C

on

tro

l [n

m]

0

20

40

60

80

100

120

25 February 2016

Slide 31

Public

Summary

• High-NA extends Moore’s Law into the next decade

• Larger contrast of High-NA helps mitigating LCDU

• New anamorphic concept enables good imaging with existing

mask infrastructure resulting in a Half Field image

• New stages technologies and high transmission enable throughput

~185WpH

• We identified measures to meet the tight focus budget

25 February 2016

Slide 32

Public

The authors would like to thank the High-NA teams in - Oberkochen - Wilton - Veldhoven

Public

Thank you

for your attention

euv high-na scanner to extend euv single exposure · public quotes from major customers on euv...

Documents