engineered substrates - at the heart of 5g connectivity

Thomas PILISZCZUK,

EVP Strategic Marketing and Business Development, Soitec

SOI Consortium, Shanghai, September 2018

Engineered substrates

- at the heart of 5G connectivity

1

2

Soitec view on 5G & New Radio (NR) network

Engineered substrates at the foundation of 5G

5G will change our lives!

Sept. 2018 SOI Consortium, Shanghai Engineered Substrates - at the heart of 5G connectivity3

Ultra-reliabilityMassive M2M

connectivity

Low latency

Enhanced

mobile

broadband

5G will extend use of the radiofrequency spectrum


5G is not only about 10x larger spectrum – it’s a whole New Radio (NR) system

A flexible network serving all applications


Core

network

Worldwide

broadband access

5G for IoT

5G broadband

Carrier aggregation

Wide Channel bandwidth

MIMO

Beamforming

Advanced coding

mmW

Multi-connectivity

Nb IoT

Cat M

Wide Channel bandwidth

A network supported by a series of new technologies


Worldwide

broadband access

5G for IoT

5G broadband

Core

network

Beamforming

Wide channel bandwidth

mmW

Satellite / Flying objects

Terrestrial Gateway

Engineered substrates today in our 4G connected world


Core

network

Worldwide

broadband access

Device-to-device

4G BroadbandPD-SOI

SoS

RF-SOI

FD-SOI

RF-SOI

SiGe RF-SOI

FD-SOI

GaAs

GaAs

SiGe RF-SOI

Engineered substrates tomorrow in our 5G connected

world


Core

network

Worldwide

broadband access

Device-to-device

5G Broadband

RF-SOI

SiGe RF-SOI

FD-SOI

PD-SOI

FD-SOI mmW

PD-SOI mmW

POI

GaAs

RF-SOI

FD-SOI

FD-SOI mmW

PD-SOI mmW

POI

RF-SOI

SiGe RF-SOI

FD-SOI

GaAs

PD-SOI

PD-SOI mmW

FD-SOI mmW

POI

GaN

InP

RF-SOI

SiGe-RF-SOI

GaAs

FD-SOI mmW

PD-SOI mmW

GaN

SiPh / InP

FD-SOI mmW

PD-SOI mmW

GaN

GaAs

PD-SOI

FD-SOI

PD-SOI

FD-SOI

5G will have a major impact at infrastructure level


4G

Base station density

< 6Ghz

mmW

x1

-

Antenna

< 6Ghz

mmW

x1

-

Power amplifier

Power (base station case)

-

< 6Ghz

mmW

x1

-

Move from III-V to

silicon world

5G

More

engineered

substrates

(quantity &

products)

Small cells demand

> x100

x100

>1

FEM & transceivers

>x100x16 to

x2048

x64

< 1 Watt

/500 to /30,000

/500

< 100 mWatt

5G challenges at system level


mmW

Components

integration

Form factor

Low power

consumption

Cost

effectiveness

Performance

Higher

frequencies

More bands

aggregation


PAFilter

Antenna

Tuner

SwitchPhase

Array

LNA

Enveloppe

Tracker

RF Front End

PLL

DAC

I

O

Serdes

Mixer

Beamformer

ADC

Transceiver

Base

Band

I

O

Processor

+ AI

Base Band

5G sub 6GHz Cellular

& Infrastructure

LDMOS, III-V

Bulk - SiGe

Bulk - FinFET sub 22nm

Bulk - RF CMOS 28nm

Bulk - FinFET sub 14nm

Bulk - CMOS < 28nm

IoT long range

Combo connectivityBulk - SiGe, RF CMOS

Bulk - CMOS < 40nm

5G mmW Cellular

& Infrastructure

III-V

Bulk - SiGe, RF CMOS

Bulk - FinFET sub 22nm Bulk - FinFET sub 14nm

IoT short rangeBulk - RF CMOS < 65nm

Engineered substrates offer unrivalled integration

- especially the FD-SOI plateform

RF-SOI

POI

RF-SOI POI, III-V

PD-SOI / HR < 65nm

FD-SOI

FD-SOI

FD-SOI

FD-SOI

Process variation

DC gain (gm/gds)

Flicker Noise

System energyefficiency

Peak Ft/Fmax

Passive quality factor

Max output power

System integration

Planar Bulk FinFET FD-SOI

Process variation

DC gain (gm/gds)

Flicker Noise


Peak Ft/Fmax


Max output power

System integration

NB-IoT and BLE

FD-SOI offers superior low power consumption

for NB-IoT and bluetooth low energy applications


System requirements RF-CMOS technology landscape

Source: Soitec internal Source: Soitec internal

Process variation

DC gain (gm/gds)

Flicker Noise


Peak Ft/Fmax


Max output power

System integration

5G mmW handset & Infrastructure & Satcom

Process variation

DC gain (gm/gds)

Flicker Noise

System energyEfficiency

Peak Ft/Fmax


Max output power

System integration

Planar Bulk FiNFET

FD-SOI FD-SOI for mmW applications

New FD-SOI flavour in development

to overcome mmW challenges for 5G


System requirements RF-CMOS technology landscape

Source: Soitec internal Source: Soitec internal

New filter technologies are needed for 5G


› Band density in the spectrum

CHALLENGES

› More bands and band combinations

› Larger bands and higher frequency bands

› Cost and manufacturability

NEW ENGINEERED SUBSTRATE

2 adjacent bands

Bulk acoustic filter

POI acoustic filter

Spectrum

Band frequency

Filter template

Num

be

ro

f b

an

ds a

nd

ba

nd

s c

om

bin

atio

ns

Full range of engineered substrates

& technologies to deploy 5G

15

RF Front-end Module

RF-SOI

Sept. 2018 SOI Consortium, Shanghai Engineered Substrates - at the heart of 5G connectivity

Processor

Connectivity SoC

mmW SOC

FD-SOI

Photonics

Photonics-SOI

RF Filters

Piezo-on-insulator

RF Power Amplifiers

III-V : GaN, GaAs, InP

Collaboration across ecosystem is key

16Sept. 2018 SOI Consortium, Shanghai Engineered Substrates - at the heart of 5G connectivity

Services

Final Product

Software

Hardware

Semiconductor device

Substrates

5G means more engineered substrates

FD-SOI - ideal platform for energy-efficient 5G systems

No industrial solutions without collaborations!

Closing Remarks


Closing Remarks


I5G

Full of engineered substrates


Thank you

Follow us to stay tuned on Soitec in China!

Soitec is proudly launching its

WeChat channel today

engineered substrates - at the heart of 5g connectivity

Documents