Stewart WilsonEuropean Sales Manager Semiconductor Parametric Test SystemsAutumn 2014.

Electrical characterization of

Graphene and nano-devices

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Keysight role in Graphene/Nano technology science

Characterisation of

Graphene and Nano

Devices

Keysight role in Graphene/Nano technology science

Graphene

2

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Graphene

Characterisation of

Graphene and Nano

Devices

Keysight role in Graphene/Nano technology science

3

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Keysight instruments for Graphene/Nano technology

Parametric Analyzer

Network Analyzer

Impedance / Material Analyzer

Pulse GeneratorSource/Measure Unit

Pico-ammeter/Electrometer

Digital Multimeter

LCR Bridge

Power Supply

Oscilloscope

Measurements

Voltage/Current

I/V curves

Impedance

Capacitance

Resistance

Conductance

S-parameters

Dielectric characteristics

Frequency Response

Time Response

Pulse Stimulus

DC power

… Characterisation of

Graphene and Nano

Devices 4

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Graphene Material Validation & Measurement

Applications Instruments Measurements

Parametric Analyzer

Network Analyzer

Source/Measure Unit

Sheet Resistance

S-parameters

Dielectric characteristics

Frequency Response

Time Response

Pulse Stimulus

DC power

Absorbing Materials

Mw & THz Graphene

Characterization

DC Characterization of Graphene

structure

I Wave

T Wave

A Wave

R Wave

Characterisation of

Graphene and Nano

Devices 5

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Sheet resistance measurement

V +/-

I +/-

Vsu

b+

/-

Source/Measure Unit

Source/Measure Unit

Source/Measure Unit

Characterisation of

Graphene and Nano

Devices 6

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Graphene Transistor

Devices Instruments Measurements

Parametric Analyzer

Network Analyzer

Source/Measure Unit

DC Characterization

• I/V measurement

• C/V measurement

• Transconductance

RF & Mw Characterization

• S-parameters

• Ft

• Impedance

measurement

• Frequency response

Characterisation of

Graphene and Nano

Devices 7

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Shielding box

SourceDrain

Side Gate

Si Sub.

SiO 2

Carbon Nanotube

Back Gate

Guard

Co-axial Cable

SMU 1

SMU 2

S

SMU 3

SMU 4

Chuck

Chuck Guard

Back Gate

connectionCircuit common

Guard

Guard

Guard

Force

Force

Force

Force

Triaxial CableTriaxial connector

Carbon Nanotube/Graphene FET / SET

Characterisation of

Graphene and Nano

Devices

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B1500A

Semiconductor

Device Analyzer

Measurement details Paper details

Keysight B1500A Semiconductor Device Analyzer

Developed I-V curves using the built-in application

software for CNT FET characterization

Measuring CNT FET’s and CNT SET’s using the

Keysight B1500A

Web site: www.keysight.com/find/nano

Application Note 5989-2842EN

Complete characterization of CNT FET’s or SET’s

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Keysight Parametric Test Solutions

Characterisation of

Graphene and Nano

Devices

B290xA/B291xA Series SMU’s

B2960A Series low noise sources

B2980A Series pico-ammeter/electrometerB1500A Semiconductor

Device Analyzer

B1505A (10kV/ 1500A)

Power Device Analyzer /

Curve Tracer

E5260/70 Modular SMU

ProductsE5250, B220x Switching Matrix

4080 Parametric Tester

Analyzer series

TesterSwitch

Bench top series

Modular

Wide variety of SMU solutions for your semiconductor business

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Keysight B1500A

Semiconductor Device Analyzer

Parametric measurement solutions

spanning the range from DC to fast

pulsed measurement.

Characterisation

of Graphene and

Nano Devices10

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Integrated fast pulsed

measurement• Voltage pulsing and fast IV

measurement in one module

• Fast: 1 ms spot and 100 ms

10-pt sweep measurement

• Test up to 10 channels in

parallel

Overview of the Keysight B1500A

Leading edge non-volatile

memory test• ±40 V pulsing capability

• 0.4 mV force voltage

resolution

• 10 ns pulse widths

• Arbitrary waveform creation

• Up to 10 independent pulse

channels

Complete capacitance

measurement solution• QSCV using SMUs

• CV module for 1 kHz to 5

MHz measurement

• Built-in CV compensation

• Automatic CV/IV switching

• Agilent 4294A driver (for up

to 110 MHz CV or Cf)

Versatile design• Flexible: 10 module slots

• Large touch screen display

• Windows XP-based for easy

workplace integration

EasyEXPERT software• Intuitive interface

• >330 furnished application

tests

• Built-in test sequencing &

wafer prober control

• Easy data export

Advanced measurement

functions• Linear/binary search

• Multi-channel sweep

• List Sweep

• Parallel test

• Direct control mode

• Range management

Characterisation

of Graphene and

Nano Devices11

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Characterisation

of Graphene and

Nano Devices

B1500A and EasyEXPERT Software form a CompleteParametric Analysis Solution

Microsoft Windows-based

EasyEXPERT software

Over 300 furnished

application tests

“My Favorite Setup”

feature allows users to

customize application

tests

Data and setup information can be

automatically saved or selectively

saved after each measurement

Intuitive GUI-based

application test

setup windows

Can automatically export

measurement data to

external drives

Measure, append and

repeat functions

Integrated switching

matrix control for the

B2200A, B2201A and

E5250A

Built-in semi-auto

wafer prober drivers

“Quick Test” utility

supports test sequencing

without programming

Innovative task-based

approach to parametric test

Standby mode for

circuit debug

Supported Functions:

1. Sweep

2. Multi-channel sweep

3. List sweep

4. Time sampling

5. 1 kHz to 5 MHz CV

6. Quasi-static CV

7. Direct control

8. HV-SPGU Control

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Ten slot modular

mainframe

4.2 Amp ground unit

(GNDU)

High power SMU

(HPSMU)

High resolution SMU

(HRSMU)

Medium power SMU

(New MPSMU)

Multi-frequency capacitance

measurement unit (MFCMU)

All SMU types are Kelvin

(separate force and sense inputs)

High-Voltage Semiconductor

Pulse Generator Unit

(HVSPGU)

Waveform Generator/

Fast Measurement Unit

(WGFMU)

Medium Current SMU

(50 µs Pulse MCSMU)

Characterisation

of Graphene and

Nano Devices

B1500A’s Hardware allows both DC and Fast Pulsed Measurements

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Complete Capacitance

Measurement Solution

Characterisation

of Graphene and

Nano Devices14

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B1500A Capacitance Measurement Coverage

5 MHz 110 MHz1 kHz

QSCV

B1500A

(MFCMU)

4294A / E4990A(?)B1500A

(SMU)

HFCV Ultra-HFCV

EasyEXPERT 5.50

• Thin-gate (<2nm)

dielectrics

• Standard (>2nm)

dielectrics

Characterisation

of Graphene and

Nano Devices15

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Characterisation

of Graphene and

Nano Devices

B1500A Step Voltage QSCV Measurement Technique (Using SMUs):

Vstep

Measure Leakage

Delay

Time

DV

Measure DQIntegration Time

C =D V

D Q

The step voltage technique is very similar to a standard voltage sweep.

The difference is that at each point on the sweep the voltage is “bumped”

and the resultant current (charge) is measured. The charge and voltage

can then be used to determine capacitance at that point.

Voltage

“Bump”

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Characterisation

of Graphene and

Nano Devices

B1500A QSCV Measurement Results

A classic quasi-static

CV curve.

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Characterisation

of Graphene and

Nano Devices

B1500A Multi-frequency Capacitance Measurement Unit (MFCMU)

QSCV response

HFCV response

• Single slot module

• EasyEXPERT provides a PC-based GUI

(including open/short/load calibration)

• 1 kHz to 5 MHz measurement range

• Can supply up to ±100 V of DC bias

(when used with the SMUs)

• Easy to superimpose HFCV and QSCV

measurements

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Characterisation

of Graphene and

Nano Devices

You Can Easily Perform Automated Parameter Extractionon CV Curves Using EasyEXPERT

All important device

parameters calculated

in a matter of seconds.

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SMU CMU Unify Unit (SCUU) Provides CV-IV Switching and Supports IV Measurements to 1 fA

Outputs converted to

two pairs of triaxial

outputs (Force & Sense)

SMUs

MFCMU

Note: When using the SCUU with the SCUU cable capacitance compensation is

automatic. The cable length is detected at boot-up and built-in compensation

routines compensate to the output of the SCUU.

Characterisation

of Graphene and

Nano Devices20

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The B1500A Offers Complete Measurement Coverage –From DC to Ultra-fast Pulsed IV

Measurement Range

Minimum Pulsing capability

1 A

0.1 fA

100us1ms 1us10us 10ns100ns

SMU/MCSMU:

• Technology

development

• Process integration

• Incoming inspection

• Failure analysis

• Reliability test

• Device modeling

• NVM cell test

• Nano device and

material research

• Quasi-static CV

• Timing on-the-fly NBTI

WGFMU:

• Ultra-fast NBTI

• General pulsed IV

• RTS measurement

• Advanced NVM

(PRAM, ReRAM)

• MEMS capacitor

characterization

• All fast time-domain

measurement

B1542A pulsed IV:

• SOI transistor test

• High-k gate

transistor test

Characterisation

of Graphene and

Nano Devices21

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What is Driving the Need for Fast Pulsed Measurement?

• New reliability tests (NBTI/PBTI) require spot and sweep

measurements to be made in a few microseconds

• The transient current consumed by memory arrays can be quite

large, and characterizing these current spikes requires current

measurements to be made in one microsecond or less.

• Characterization of SOI MOSFETs requires pulsed measurement

in the nanosecond range to prevent device self-heating effects from

distorting the measurement results

• Characterization of high-k gate dielectric MOSFETs requires

pulsed measurement in the nanosecond range to remove the effects

of electron trapping in the gate oxide due to electron tunneling

•.R&D for novel devices or materials (MEMS, Organic Transistor,

etc.) and many other newly discovered phenomena (such as

random telegraph signal noise) require very fast current and voltage

Characterisation

of Graphene and

Nano Devices22

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Issues in Advanced process devices

MOS-FET on SOI

n+

p-Si

GateSource Drain

p

Ef

Ev

Ec

Gate

p-Si

Barrier Oxide

High-K

SiO2

n+p

MOS-FET with High-k Gate dielectrics

Self-heating effect

Trapped electron & Gate leakage

#1:SOI

#2:High-k

• Electrons trapped in the boundary defects influence the electronic filed applied to the channel.

High thermal

resistance

#3:HEMT

Self-heating effect & Current collapse

#4:Nano

GaN HEMT

Joule heating effect

Joule heating effects damage

small nanodevices

Trapped charge

Drain

current

decrease

Drain

current

decrease

Drain

current

decrease

Damage/

Destroy

DUT

Current

Collapse

• Electrons trapped in the AlGaN surface states influence the electronic fielf applied to the channel

Characterisation

of Graphene and

Nano Devices23

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Agilent Pulsed IV solutionsKeysight has a complete line of Pulsed IV solutions B1542A Pulsed IV Parametric Test Solution

Ultra Narrow Pulse IV solution for SOI/High-k devices

+/- 4.5V pulses for the gate and +/-10V and 80mA for the drain

10ns gate pulse width with 2ns rise and fall times

1uA current measurement resolution

B1530A WGFMU Pulsed IV Solution

High resolution Pulse IV solution for advanced process devices

+/-10V for gate/drain and drain current up to 10mA

100ns pulse width

2nA current measurement resolution

New B1514A MCSMU Module 50us, 30V to be discussed later

B1525A SPGU Pulsed IV Solution

Higher Voltage/Current Pulse IV solution for HEMT or Power device

+/-40V for gate/drain and drain current up to 400mA

5us pulse width

40uA current measurement resolution

B1525A

B1530A

B1542A

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of Graphene and

Nano Devices24

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B1542A Pulsed IV Parametric Test Solution

Target Application

Id-Vd and Id-Vg measurement with pulse “gate” bias for the SOI or high-

k gate dielectrics MOSFET.

Benefits

Ultra narrow pulses reduces the self-heating effects and the

incidence of electron trapping for SOI transistors and high-k gate

dielectric transistors respectively

Capability to apply 10ns gate pulse width with 2ns rise and fall times

Complete package contains all instruments, cables, connectors

and software needed for PIV

System cabling to keep impedance matching for uncluttered pulse shape

down to 10ns pulse width with 2ns rise/fall time

Specially designed Bias-T to make pulse top flat

Feedback loop enables accurate Id-Vd and Id-Vg measurement

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of Graphene and

Nano Devices25

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B1542A Pulsed IV solution - System Configuration

Keysight 81110A Pulse Generator

Gate Pulse Monitor Ch

Keysight B1500ASemiconductor Device Analyzer

DC Bias Ch from SMU

Gate Pulse Output Ch

Keysight DSO90254A 2.5 GHz Digital Storage Oscilloscope

D

S

G

Drain Current Monitor Ch

Pulse Splitting Tee

Terminator

Bia

s-T

DUT

Triaxial cable

RF coaxial cable

RF coaxial cable

RF coaxial cable

System configuration keeping

impedance matching everywhereCharacterisation

of Graphene and

Nano Devices26

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B1542A Pulsed IV solution - Effect of Pulsed IV for SOI/SSOI

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1

Dra

in C

urr

ent,

Id

[m

A/mm]

Drain Voltage, Vd [V]

Vg=1.15V

StaticPulsed

Strained-SOI18%

11%SOI

Reference:

・”High Performance and New Structure CMOS Device Technology for the leading edge LSI”

by Shinichi Takagi from MIRAI project, at Agilent AMF2006 in Japan Characterisation

of Graphene and

Nano Devices27

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B1530A WGFMU Pulsed IV Solution

• Target Application

• Nanoscale devices such as carbon nanotubes, semiconductor nanowires, graphene-based

electronics, molecular organic-based electronics, single electron devices and advanced

semiconductor devices

• NBTI & PBTI Reliability measurements plus Random Telegraph Signal Noise Measurements.

• Benefits

• Capability to measure small current/voltage due to the necessity of applying very small voltage

pulses to reduce the Joule heating effects

• Current measurement range: 10uA – 10mA

• Effective resolution: 0.2% of range (Minimum 2nA)

• Easy to use

• B1530A WGFMU Pulsed IV Solution does NOT require any external equipment and messy

cablings because of the capabilities for both pulse generation and precise measurement on

one channel

B1530A

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of Graphene and

Nano Devices28

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B1530A WGFMU (Waveform Generator/Fast Measurement Unit )

• Offer the combination of arbitrary linear waveform generation (ALWG) with synchronized fast and precise current or voltage (IV) measurement

• Optional module for B1500A

• Compact solution without any external

equipment

• Multi-channel parallel testing for up to 9 devices

• Upgradable for existing B1500A mainframe

B1530A

• Minimum Pulse Width:100ns

• Up to 10V/10mA output

• 200MHz samp/s

• 2nA current measurement resolution

• 2ch/Module

Up to 5 modules

B1530A

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of Graphene and

Nano Devices29

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B1530A WGFMU Pulsed IV solution- System Configuration (1) : For RF Probes

B1530A

WGFMU

Trigger-out

Sync-out

Sync-in

Ch1

Ch2

B1500A

B1530A-002/003/005

16493R-302 x2(SMA-SMA:20cm:1ea)

MPSMU

MPSMU

To WGFMU

To SMU

V Monitor

Output

[D-Sub]

[Tri-ax]

[BNC]

To WGFMU

To SMU

V Monitor

Output

[SMA]

[SMA]RF Probes

-The B1530A includes WGFMU module,

two RSU and two cables between WGFMU and RSU.* Doesn’t include the cables from RSU-output and RF-Probe.

16494A (Tri-ax cable)

-Some prober vendors can provide the cables between RSU/Probes

and also Probes. Please contact prober vendor.

16493R-802 x2(Magnet Stand:1ea)

(3.0m/5.0m/1.5m)

B1530A

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of Graphene and

Nano Devices30

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B1530A WGFMU Pulsed IV solution- System Configuration (2) : For DC Probes

B1530A

WGFMU

Trigger-out

Sync-out

Sync-in

Ch1

Ch2

B1500A

B1530A-002/003/00516493R-202

(SMA-SSMC:20cm:1ea)

MPSMU

MPSMU

[D-Sub]

[Tri-ax]

[BNC]

To WGFMU

To SMU

V Monitor

Output

[SMA]

-The B1530A/B1530A-FG includes WGFMU module,

two RSU and two cables between WGFMU and RSU.* Doesn’t include the cables from RSU-output and DC-Probe, and SSMC cable.

16494A (Tri-ax cable)

001:1.5m, 002:3m, 005:4m

[SSMC]

16493R-101/102

(SSMC-SSMC:5cm/7cm:1ea)

To WGFMU

To SMU

V Monitor

Output

RSU RSU

16493R-101/102 are to keep

the ground return path.

-Some prober vendors can provide the

cables between RSU/Probes and also

Probes. Please contact prober vendor.

DC Probes

(3.0m/5.0m/1.5m)

B1530A

Characterisation of

Graphene and Nano

Devices 31

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B1530A WGFMU PIV Solution - Example of Measurement Data

-1.E-03

-9.E-04

-8.E-04

-7.E-04

-6.E-04

-5.E-04

-4.E-04

-3.E-04

-2.E-04

-1.E-04

0.E+00

-3-2.5-2-1.5-1-0.50

Vg (V)

Id (

A)

100 us Step (Reference)

1 us Step

1 us Pulse

B1530A

Gate

Drain

Note:

100us Step measurement was done by SMU

1us Step & 1us Pulse measurement was done by B1530A WGFMU

5us

100mV

1V

Characterisation

of Graphene and

Nano Devices32

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B1530A WGFMU Can Make Random Telegraph Signal Noise Measurements

Convert to

Frequency Domain

Spectral

Density Plot

Characterisation

of Graphene and

Nano Devices33

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B1525A HV-SPGU Pulsed IV Solution forHigh Voltage/High Current applications

• Target Application

• High Voltage/Current Pulsed IV, such as characterization for HEMTs

• Benefits

• Evaluate High power devices by minimizing the self-heating

effect

• Able to apply gate/drain pulses up to 40V and drain current up to 400mA

• Wide rage of pulse width from 5 us to 10 s

• Easy to use & economical solution

• Require only one B1525A module for three terminal devices

• No need any external equipment and complex cabling

• GUI-based sample Application Tests run on EasyEXPERT

B1525A

Characterisation

of Graphene and

Nano Devices34

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B1525A SPGU (Semiconductor Pulse Generator Unit)• A fully integrated high-voltage pulse generator unit

module

• Two channels per module

• Up to 5 modules (10 channels) per B1500A

• ± 40V pulse supply capability

• Superior pulse level accuracy

• Three-level pulse and open-state pulse capability

on each channel

• Complex waveform generation

• Integrated into B1500A EasyEXPERT software

• Output SPGU voltage monitor function (industry

first function!)

Timing

Gen.

Ch1

Ch2

B1525A

Amplifier

Output

Channel50W

Output

Impedance

Pulse Source

HV-SPGU

Output Voltage Monitor

B1525A

Characterisation

of Graphene and

Nano Devices35

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A One Million Cycle Write/Erase Endurance Test Can be Completed in Hours Rather Than Days!

Written Vth

Erased Vth

Written/Erased

Vth Separation

Over Time

% of Write/ Erase

Cycles Completed

is Displayed

Characterisation

of Graphene and

Nano Devices36

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All the parameters for Pulsed IV parametric test can be easily set and changed.

B1500A 50 µsec Pulse MCSMU Expands your choice ofPulsed IV up to 30V/1A

• Tracer test mode/OSC view • Application test mode

Oscilloscope view gives you more

confidence for the pulse measurement

of MCSMU by optimizing timing

parameters with monitoring actual V/I

waveform that has been impossible

before

User can optimize the timing

parameters such as integ

time and delay for the best

measurement.

GUI-based dedicated Application test

for pulsed Id-Vd or Id -Vg makes task-

oriented approach also to fast pulsed

IV measurement as easy as 1-2-3.

Characterisation

of Graphene and

Nano Devices37

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Parametric Measurement Handbook &Impedance Measurement Handbook Available

You can request it online:

http://www.keysight.com/find/parametrichandbook

http://cp.literature.keysight.com/litweb/pdf/5950-3000.pdf

You can also request a copy by completing the evaluation form.

200+ pages of invaluable

information on parametric test

Characterisation

of Graphene and

Nano Devices38

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Characterisation

of Graphene and

Nano Devices

Questions?

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Thank you for your kind attention

Characterisation

of Graphene and

Nano Devices40