electric-field_nature.pdf
TRANSCRIPT
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Metal gate
V G > 0 V G = 0 V G < 0
Insulator
InAs
(AI,Ga)Sb AISb
GaAs substrate
(In,Mn)As
Temperature (K)
R s
h e e t
( B =
0 ) ( k Ω )
R H
a l l
( k Ω )
B (T)
V G = 0 V Sample A
R H a
l l ( B = 0 ) ( k Ω )
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R H
a l l
( Ω )
B (mT)
Sample B 22.5 K
B (mT)
R H a
l l ( Ω )
0 V
+125 V–125 V0 V
R Ω
Temperature (K)
RHall
( Ω )
2
2
B/RHall (T Ω -1 )
4,000
3,000
2,000
1,000
0 V+125 V–125 V0 V
V G = 0 V
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10 –5
10 –4
10 –3
10 –2
10 –1
10 0
10 1
σ
T ( Ω – 1
c m
– 1 K
)
2.62.42.22.01.81.61.41.2
10 3 T –1 (K–1 )
103nm
430nm
20nm
50nm
16.2nm
250nm
BaF 2CaF 2
0.95eV
0.72eV
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