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Page 1: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 2: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 3: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 4: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 5: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 6: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 7: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 8: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

Page 9: eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[43... · 2008-05-01 · 4a 45 SD 2008-45SD-4-5 Software Ikfined Radio 14131 E 150MS/s 0.13um CMOS N'D (A 14b 150MS/s

IBM 0.13um Interconnect Technology Lecture 17ee290d/fa13/LectureNotes/Lecture17.pdf · 12/4/2013 Nuo Xu EE 290D, Fall 2013 6 Technology Features: • Carbon ... Hayashi, “BEOL towards

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NEW - HAIKUO · 2013. 5. 27. · REVERB EFFECTS Tape delay 150ms/1 repeat, stereo tape delay 300ms/3 repeats, mono delay 700ms/4 re-peats, small room reverb, plate reverb, large hall

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34-ST-03-102 STG700 15Jan13 JF · DE/HART Protocol FOUNDATION Fieldbus 100ms 150ms (Host Dependant) Damping Time Constant HART: Adjustable from 0 to 32 seconds in 0.1 increments

A view on electronics for the prototype of the GOSSIP detector in 0.13um CMOS Technology

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Overview - dongbuhitek.com HiTek Company Profile(ENG... · ShuttleChipTM Service 0.11um 0.11um 0.13um 0.15 ~ 0.18um Tape-out start date * The shuttle schedule might be changed or

eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[42... · 2008-04-02 · 80 -gee 130MS/s 108mW 1.8mm2 0.18um CMOS A/D 12Blg ADC'--I [181 01 MDAC ADC* c}. MDAC qe

TDLTE Webinar v2 - TeleSemana.com · TD-SCDMA FDD LTE TD-LTE LTE Advanced >90% harmonized in 3GPP GSM HSPA LTE Throughput latency GSM HSPA LTE 10ms >100 Mbit 150ms

IBM 0.13um Interconnect Technology Lecture 17ee290d/fa13/... · TSV Applications: 3-D DRAM 12/4/2013 Nuo Xu EE 290D, Fall 2013 15 Source: Intel & Micron (2011) • Data Transferring

IC DESIGN LAB THANKS TO TEACHER - sogang.ac.kreeic7.sogang.ac.kr/images/banner/family/6_samsung_sec.pdf · 2009-07-12 · Texas Instruments SN75LVDS83B – LVDS Display SERDES ELAN

Author's personal copyto FCz) in the post-stimulus time windows from 50 to 150ms (P1), 150 to 250ms (N1), 400 to 600ms (reﬂecting the onset to the peak of the N400 component), and

PowerPoint Presentation · Less frequent, smaller cache region: 15% More frequent, larger cache region: 85% Performance overhead Address remapping: 150ms for remapping a 2GB memory

A 10 Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13um SOI CMOS High Speed Circuits & Systems Laboratory Joungwook Moon 2011

각종 센서 응용을 위한 10b 10MS/s 0.13um CMOS SAR 구조의 ADCeeic7.sogang.ac.kr/paper file/domestic conference/[52... · 2009-05-06 · é É b @ ~ È Ç n Í È è é j

do MHL-150MS-manu 160824 · 2016. 8. 29. · Title: do_MHL-150MS-manu_160824.ai Author: zensha-taku Created Date: 8/29/2016 8:52:31 AM

Size Matters: of QRS to Left Ventricular Dimension ... · morphology, with a higher class of recommendation for patients with QRSd ≥150ms and LBBB morphology.(4,5) Patient selection

2013 연구실 소개자료 - eeic7.sogang.ac.kreeic7.sogang.ac.kr/images/banner/20171023_ICLAB.pdf · ic design lab - 김민규, 제 1 회 반도체회로 설계기술 컨테스트

Calidad de Servicio...Usa el protocolo RTP [RFC3550], usando UDP Se recomienda un retraso 150ms y se comprueba que a partir de 150ms el usuario pierde satisfacción con el servicio

2013 연구실 소개자료 - eeic7.sogang.ac.kreeic7.sogang.ac.kr/images/banner/20160927_ICLAB.pdf · - 이승훈 교수, kaist idec 차세대 반도체설계인력양성사업을

eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[44... · 2008-06-05 · (00 ssaooe „(0toc 01 -a BueBos 'Buuaau1Bua JO uoguqgeo 'uomosa-l-qïvq 'augad!d 'SOI,NO

AMICSA’2006 A 0.13um CMOS Rad-hard proven technology with associated mixed mode circuit design approaches for space applications Laurent Dugoujon (1),

eeic7.sogang.ac.kreeic7.sogang.ac.kr/paper file/domestic journal/[58... · 2016-08-09 · 28 저전력 복합 스위칭 기반의 0.16mm2 12b 30MS/s 0.18um CMOS SAR ADC 신희욱

10b 150MS/s 0.4mm² 45nm CMOS ADC Based on Process-Insensitive Amplifierseeic7.sogang.ac.kr/paper file/international conference... · · 2013-03-03capacitance can limit the bandwidth

Classification of Natural Scenes · zuverlässig (im Allgemeinen über 90% richtig), sondern auch extrem schnell erkennen – schon ab 150ms entscheiden manche Versuchspersonen über-zufällig

ナノCMOS時代のアナログ技術の課題と動向...LW µm2) 110100 1000 0.4um Nch 0.13um Nch In w/o Halo* 0.13um Nch Boron, w. Halo 2007/10/19 165委員会_Matsuzawa_Titech

9. Modular AC Front-End System (ENMod™) Design Guide ......Timing Diagram, Power Up/Down Sequence 4.1 1.1 2.1 3.1 5.1 2.2 1.2 ~150ms Figure 9.3 — Functional block diagram: FARM3

ENSSAT EII2 Projet en conception de circuits intégrés … · Conception sur ASIC en technologie ST 0.13um ... Le tutorial sur l'utilisation de Synopsys vous permettra de prendre

THE WIND-EVOKED ESCAPE BEHAVIOR OF THE CRICKET … · (Datametrics VTP 800, Watertown, MA, USA). The wind signals were highly laminar, at least for the ﬁrst 150ms, which included

Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic- Threshold MOS Transistors (DTMOSTs) in 0.13um CMOS Technology. Vladimir Gromov

Manual de funcionamiento original - Leuze · 2.La duración de la prueba no debe exceder de 150ms con protección contra el acceso. 3.Los elementos de conmutación de salida de la