design for e-beam (dfeb) is central to dfm
TRANSCRIPT
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Design for E-beam (DFEB) is Central to DFM
Aki Fujimura eBeam Initiative
Beyond Light: The Growing Importance of E-beam
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Mask Cost Explodes at 22 nm
193i Lithography at 22nm is one reason!
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Higher Mask Cost : the Greatest Concern for Designers
Global Semiconductor Alliance 12/6/2007: What is the biggest challenge to overcome as your company moves from one process node to the next?
Source : Global Semiconductor Alliance
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5
Samsung study : Ref: Byung-Gook Kim, et al., PMJ 2009.
OPC A: standard OPC
At 22nm 193i Good Wafers = High Mask Cost Cost
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• Light – Today : 193i w/multiple patterning masks – Future : EUV (Extreme Ultra-Violet)
• Nano-imprint • Electron Beam (E-beam) Lithography
– Today : Shaped Beam and Character Projection – Future:
• Multiple-beam E-beam • Multi-columned, single-beam • Multi-shaped beam (MSB)
Next-Generation Lithography: Solving the Mask-Cost Problem
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Character Projection in Production Use at e-Shuttle
Picture Courtesy of e-Shuttle, Inc.
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Today’s E-beam Lithography
Wafer
Electron Gun
Wafer
• 50kV E-beam drills great holes!
• E-beam doesn’t have depth of focus (DOF) problems like light
• E-beam is very accurate compared to light
• Write time is the challenge
Second Aperture (Stencil Mask)
First Aperture
Drawing Courtesy of Advantest
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Electron Gun 1st Aperture 2st Aperture
Demagnification Character
Projection (CP) Variable Shape
Beam (VSB)
(4 shots) (1 shot)
Character Projection Lowers Shot Count
Drawing Courtesy of Hitachi High-Technologies
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DFEB Decreases Required Shots
Comparison Source: D2S, Inc. Computer simulation of e-beam write time on a particular test case (speed up is dependent on aperture size and utilization %)
VSB CP CP+
VSB
CP VSB
CP
With DFEB and CP With CP Today
1/3-1/5 1/10-1/25
DFEB optimizes for shot count at the design stage to reduce residue VSB to achieve 10-25X reduction
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Conventional Flow with CP
Extract Characters GDSII Stencil Mfg Write Wafer
Extract Characters GDSII #2
Stencil #2 Mfg Write Wafer
Extract Characters GDSII #3
Stencil #3 Mfg Write Wafer
Extract Characters GDSII #4
Stencil #4 Mfg Write Wafer
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GDSII #3
RTL #3
Synthesize to Overlay Library
Write Wafer
GDSII #2
RTL #2
Synthesize to Overlay Library
Write Wafer
DFEB Methodology
DFEB Overlay Library
Stencil Mask GDSII
RTL
Synthesize to Overlay Library
Write Wafer
First: Design overlay library and Stencil Mask
U.S Patent No. 7,579,606 and patents pending, D2S, Inc.
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DFEB Packed Stencils (Advantest F3000 with D2S)
The Packed Stencil allows, for example, this packed layout of 220-280 characters
Previous specification of the F3000 character block with 100 characters
U.S Patent No. 7,579,606 and patents pending, D2S, Inc.
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DFEB Character Sharing
By “cutting” first aperture deflection at various positions, different drives of the cell can be shot from the same character.
U.S Patent No. 7,579,606 and patents pending, D2S, Inc.
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• Light – Today : 193i w/multiple patterning masks – Future : EUV (Extreme Ultra-Violet)
• Nano-imprint • Electron Beam (E-beam) Lithography
– Today : Shaped Beam and Character Projection – Future:
• Multiple-beam E-beam • Multi-columned, single-beam • Multi-shaped beam (MSB)
Next-Generation Lithography: Solving the Mask-Cost Problem
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Single source/ Single column
Multi source/ Single column
Multi source/ Multi column
PML2, MAPPER, BLA MCC Multibeam, others
Source Column
Types of Multi-Beam Machines
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Rectangular Apertures (4x4)
Pre. Mask Deflector
Electron Gun (4x4)
Blanking Deflectors
CP Aperture Masks (on separated stage)
Post Mask Deflectors
Round Apertures
Major Deflector (100x100 um) Minor Deflector (10x10 um)
300mm Wafer
CC-1 Rack High speed digital circuits for each CC ( DATA memory, PG, PC, CLK etc.) are in a rack of size about 400x400x400 mm3.
* Identical 16 racks for 16CC system. * Digital unit ; 5000x1000x2000mm3.
CC-2 Rack
CC-16 Rack
Wafer Stage
Stage Controller
Position Sensor
CPU
Lens Power Supply
GUN HV Power Supply
Digital Control Unit
Multi-Source/Single-Column: MCC System with 16CCs
Drawing Courtesy of Advantest
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MCC-POC System
Courtesy of Advantest
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CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
CC9
CC10
CC11
CC12
CC13
CC14
CC15
CC16
• Chip Size: 20x20mm on 300mm Wafer
• Each CCn (n=1,,16) exposes the chips, whose centers are in the 75x75mm region of the CCn
• The chips of the same colors are exposed with the same corresponding CCn
75mm
75mm
300mm Wafer
Exposing 300mm Wafer with 16CCs
Drawing Courtesy of Advantest
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Stitching boundary of CC
(4.5,-11.9) (-9.5,-19.6)
(-17.3,-9.2)
(nm)
fiducial CC CC3
CC2
CC4
CC1
CC4
CC1
CC2
CC3
3rd-quadrant pattern exposed by CC1 4th-quadrant pattern
exposed by CC2
2nd-quadrant pattern exposed by CC4
1st-quadrant pattern exposed by CC3
CCm-n ; Stitching errors between CCm and CCn. ( m,n = 1, 2, 3, 4 )
CC1-2
CC2-3
CC3-4
CC1-4
CC
14.0
-4.5 -17.3
-10.1
X
7.7
11.9
-9.2
11.5
Y (nm) (nm)
Preliminary Stitching Between Different Columns
Courtesy of Advantest
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The Future of Lithography? Think Beyond Light!
• E-beam is important now, critical at 22nm • Even with light, the mask is made with E-
beam! • DFEB is central to DFM
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Member Companies & Advisors
www.ebeam.org
Jack Harding eSilicon
Colin Harris PMC-Sierra
Jean-Pierre Geronimi ST
Riko Radojcic Qualcomm
Marty Deneroff D. E. Shaw Research
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