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CV hysteresis in metaloxidesemiconductor structures resulting from Ptdoping of the gate oxideBogdan Golja andArmenag G. NassibianCitation: J. Appl. Phys. 56, 3014 (1984); doi: 10.1063/1.333778View online: http://dx.doi.org/10.1063/1.333778View Table of Contents: http://jap.aip.org/resource/1/JAPIAU/v56/i10Published by theAmerican Institute of Physics.Related Articles1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with lowinterface trap density and low gate leakage current density

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c-V hysteresis in metal-oxide-semiconductor structures resuftiog from Ptdoping of the gate oxide

Bogdan Golja8 ) and Armenag G. NassibianDepartmentofElectricalandElectronic Engineering. Universityo fWestern Australia. Nedlands. W. A. 6009Australia(Received 24 February 1984; accepted for publication 20 Apri l 1984)Experimental results of hysteresis on platinum-difl'used (111) and (100) metal-oxidesemiconductor (MOS) capacitors are presented. The platinum diffusions were performed throughthe front surface with no oxide present and on wafers with 50 and 100 Aoxides already grown.The diffusion conditions were also varied, some being carried out in a nitrogen ambient and othersin an oxygen ambient. The temperature and time were fixed at 1000C and 60 min, respectively.The findings confirm the hysteresis effects of platinum in the oxide-silicon system and suggest thatits introduction may be controlled by the presence of an oxide, in much the same way that B or Pdiffusions are controlled. This being the case, the charge retention properties of platinum-diffusedMOS structures may be exploited by present day integrated circuit fabrication procedures.

It has been reportedl,z that platinum-diffused metaloxide-semiconductor (MOS) capacitors fabricated on


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TABLE I. Flat-band voltage shifts after app lication of negative and positive biases. respectively. in the devices fabricated under various conditions on


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teen measurements made across a wafer. The capacitorswhich had platinum-silica film applied to the front surface,with no oxide present, tended to be very leaky and did notshow any hysteresis with either (100) or < 11) wafers. Ingeneral, the majority of capacitors fabricated using processA (N2-N 2) tended to be leaky and did not exhibit significantswings about the initial fiat-band voltage. This was the casefor either orientation and whether there was an initial oxidepresent or not. Using process B (02-N2)' capacitors fabricated on (100) silicon with initial 50- and 100-A oxides werenot leaky and produced-4 V swings about the initial fiatband voltage. However, (111) capacitors made under identical conditions were generally leaky and produced no significant hysteresis. This can be seen in Figs. 1 and 2 showing(100) and (111) capacitors, respectively. Process C (02-02)produced the most encouraging results on both (100) and( 111) silicon. The quality ofcapacitors was vastly improvedwith very few leaky deviceson the wafers with 50- and 100-Ainitial oxides. Th e platinum diffusion conditions also produced symmetrical voltage swings about the original fiatband voltage. It was observed that the wafers with 100Aofinitial oxide produced a smaller swing about the fiat bandthan the thinner oxide wafers. In the case of he (100) wafer,hysteresis disappeared completely.

I t is evident that hysteresis can be induced in deviceswhere the platinum has been diffused from the front surface(the face with the active devices). In addition the degree ofhysteresis has been controlled by having an oxide present onthe wafer and diffusing through it. Any oxide grown duringthe diffusion also affects the degree of hysteresis. Process C(0 2-0 2) produces capacitors with minimal hysteresis. Thisagrees with the results of Mori et a/.4 who did not observeany hysteresis when their platinum diffusions were carriedout in an oxygen ambient. This suggests that there is an optimum thickness for the prediffusion oxide which will resul t innonleaky capacitors with symmetrical swings about theoriginal fiat-band voltage. When the initial oxide was increased form 50 to 100 A and the platinum diffused usingprocess C (02-02) the hysteresis was reduced in


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1757 (1980).'A . G. Nassibian, D. Jordan, B. Golja, and J. G. Simmons, IEEE Trans.Electron Devices ED-28, 1014 (1981).Mori, H. Kato, and H. Kuwano, Jpn. J. Appl. Phys. 22, L251 (1983).

3017 J. Appl. Phys., Vol. 56, No. 10, 15 November 1984

sw. Kern and D. A. Puotinen, RCA Rev. 31,187 (1970).6K. P. Lisiak and A. G. Milnes, Solid-State Electron. 18, 533 (1975).7K, P. Lisiakand A. G. Milnes, J. Appl. Phys. 46, 5229 (1975).

B. Golja and A. G. Nassibian 3017

cv hysteresis obs

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