chapter 2 fundamentals of semiconductor 2.1 semiconductor materials and crystal...

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Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Confidential of Shanghai Jiao Tong University Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/ Prepared by Xiulan Cheng/程秀兰 程秀兰 Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal Lattice Lattice Lattice Lattice Shirla Cheng Shirla Cheng Shirla Cheng Shirla Cheng [email protected] [email protected] [email protected] [email protected] 2012.2.15 2012.2.15 2012.2.15 2012.2.15

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor Chapter 2 Fundamentals of Semiconductor 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal 2.1 Semiconductor Materials and Crystal

    LatticeLatticeLatticeLattice

    Shirla ChengShirla ChengShirla ChengShirla [email protected]@[email protected]@sina.com

    2012.2.152012.2.152012.2.152012.2.15

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    OutlineOutlineOutlineOutline

    Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials’’’’ Properties Properties Properties PropertiesCrystalline StructureCrystalline StructureCrystalline StructureCrystalline Structure

    Crystal LatticeMiller IndexSemiconductor Crystal structure

    Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor Preparation of Single crystal semiconductor materialmaterialmaterialmaterialSummarySummarySummarySummaryHomework Homework Homework Homework

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials’’’’ Properties Properties Properties Properties

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    WhatWhatWhatWhat’’’’s the semiconductors the semiconductors the semiconductors the semiconductorLow resistivity => Low resistivity => Low resistivity => Low resistivity => ““““conductorconductorconductorconductor””””: : : : ρρρρ=10=10=10=10-5-5-5-5 ~10 ~10 ~10 ~10-6-6-6-6Ω.cmHigh resistivity => High resistivity => High resistivity => High resistivity => ““““insulatorinsulatorinsulatorinsulator””””: : : : ρρρρ=10=10=10=1014141414 ~10 ~10 ~10 ~1018181818Ω.cmIntermediate resistivity => Intermediate resistivity => Intermediate resistivity => Intermediate resistivity => ““““semiconductorsemiconductorsemiconductorsemiconductor””””::::ρρρρ=10=10=10=10-3-3-3-3 ~10 ~10 ~10 ~103333Ω.cm

    conductivity lies between that of conductors and insulatorsgenerally crystalline in structure for IC devices

    Al: 2.7uΩ.cm Na: 4.7uΩ.cm

    SiO2: >10 14Ω.cm

    Ge Si: ~10 4Ω.cm GaAs

    0.67ev 1.1 ev1.40 ev

    8 ev

    EvValence Band

    Conduction Band

    Ec

    ConductorConductorConductorConductorConductorConductorConductorConductor

    SemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductorSemiconductor

    Forbidden band

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor ElementsSemiconductor ElementsSemiconductor ElementsSemiconductor Elements in Element Periodic Table in Element Periodic Table in Element Periodic Table in Element Periodic Table

    1 18

    1A 8A

    1 2 13 14 15 16 17 2

    H IIA IIIA IVA VA VIA VIIA He

    1.01 2A 3A 4A 5A 6A 7A 4

    3 4 5 6 7 8 9 10

    Li Be B C N O F Ne

    6.94 9.01 10.8 12 14 16 19 20.2

    11 12 3 4 5 6 7 11 12 13 14 15 16 17 18

    Na Mg IIIB IVB VB VIB VIIB IB IIB Al Si P S Cl Ar

    23 24.3 3B 4B 5B 6B 7B 1B 2B 27 28.1 31 32.1 35.5 40

    19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

    K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr

    39.1 40.1 45 47.9 50.9 52 54.9 55.9 58.5 58.7 63.6 65.4 69.7 72.6 74.9 79 79.9 83.8

    37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54

    Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb Te I Xe

    85.5 87.6 88.9 91.2 92.9 95.9 -98 101 103 106 108 112 115 119 122 128 127 131

    55 56 57 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86

    Cs Ba La* Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn

    133 137 139 179 181 184 186 190 190 195 197 201 204 207 209 -210 -210 -222

    87 88 89 104 105 106 107 108 109 110 111 112 114 116 118

    Fr Ra Ac~ Rf Db Sg Bh Hs Mt --- --- --- --- --- ---

    -223 -226 -227 -257 -260 -263 -262 -265 -266 () () () () () ()

    4

    5

    6

    7

    3

    8 9 10

    ------- VIII -------

    2

    1

    Peri.

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor Materials

    11s 2s 2p 3s 3p 3d

    1 H 1 1s 1

    2 He 2 1s 2

    3 Li 2 1 1s 2 2s 1

    4 Be 2 2 1s 2 2s 2

    5 B 2 2 1 1s 2 2s 2 2p1

    6 C 2 2 2 1s 2 2s 2 2p2

    7 N 2 2 3 1s 2 2s 2 2p3

    8 O 2 2 4 1s 2 2s 2 2p4

    9 F 2 2 5 1s 2 2s 2 2p5

    10 Ne 2 2 6 1s 2 2s 2 2p6

    11 Na 2 2 6 1 1s 2 2s 2 2p6 3s 1

    12 Mg 2 2 6 2 1s 2 2s 2 2p6 3s 2

    13 Al 2 2 6 2 1 1s 2 2s 2 2p6 3s 2 3p1

    14 Si 2 2 6 2 2 1s 2 2s 2 2p6 3s 2 3p2

    15 P 2 2 6 2 3 1s 2 2s 2 2p6 3s 2 3p3

    16 S 2 2 6 2 4 1s 2 2s 2 2p6 3s 2 3p4

    17 Cl 2 2 6 2 5 1s 2 2s 2 2p6 3s 2 3p5

    18 Ar 2 2 6 2 6 1s 2 2s 2 2p6 3s 2 3p6

    ZZZZ Nam eNam eNam eNam e NotationNotationNotationNotation2 3

    # of Electrons# of Electrons# of Electrons# of Electrons

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor Optical SourceSemiconductor Optical SourceSemiconductor Optical SourceSemiconductor Optical Source

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor Materials for Semiconductor Materials for Semiconductor Materials for Semiconductor Materials for Optoelectronic DevicesOptoelectronic DevicesOptoelectronic DevicesOptoelectronic Devices

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Semiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsSemiconductor MaterialsElemental Semiconductor :

    Silicon (Si), Germanium (Ge)Compound Semiconductor :

    IV-IV: SiCIII-V: AlP, AlAs, AlSb, GaN,GaP, GaAs,GaSb, InP, InAsII-VI: ZnO, ZnS, ZnSe,ZnTe,CdS,CdTe,HgS

    Alloy SemiconductorBinary Alloys: Si1-xGexTriple Alloys: AlxGa1-xAs, AlxIn1-xAs, Cd1-xMnxTe,GaAs1-xPx,GaxIn1-xAs,GaIn1-xP, Hg1-xCdxTeQuaternery Alloys: AlxGa1-xAsySb1-y, GaxIn1-xAs1-yPy

    11s 2s 2p 3s 3p 3d

    1 H 1 1s 1

    2 He 2 1s 2

    3 Li 2 1 1s 2 2s 1

    4 Be 2 2 1s 2 2s 2

    5 B 2 2 1 1s 2 2s 2 2p1

    6 C 2 2 2 1s 2 2s 2 2p2

    7 N 2 2 3 1s 2 2s 2 2p3

    8 O 2 2 4 1s 2 2s 2 2p4

    9 F 2 2 5 1s 2 2s 2 2p5

    10 Ne 2 2 6 1s 2 2s 2 2p6

    11 Na 2 2 6 1 1s 2 2s 2 2p6 3s 1

    12 Mg 2 2 6 2 1s 2 2s 2 2p6 3s 2

    13 Al 2 2 6 2 1 1s 2 2s 2 2p6 3s 2 3p1

    14 Si 2 2 6 2 2 1s 2 2s 2 2p6 3s 2 3p2

    15 P 2 2 6 2 3 1s 2 2s 2 2p6 3s 2 3p3

    16 S 2 2 6 2 4 1s 2 2s 2 2p6 3s 2 3p4

    17 Cl 2 2 6 2 5 1s 2 2s 2 2p6 3s 2 3p5

    18 Ar 2 2 6 2 6 1s 2 2s 2 2p6 3s 2 3p6

    ZZZZ Nam eNam eNam eNam e NotationNotationNotationNotation2 3

    # of Electrons# of Electrons# of Electrons# of Electrons

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    The Silicon AtomThe Silicon AtomThe Silicon AtomThe Silicon Atom14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:14 electrons occupying the 1st 3 energy levels:

    1s, 2s, 2p orbitals filled by 10 electrons3s, 3p orbitals filled by 4 electrons

    To minimize the overall energy, the 3s and 3p orbitals hybridize to form 4 tetrahedral 3sp orbitals

    Each has one electron and is capable of forming a bond with a neighboring atom

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Types of Solid MaterialsTypes of Solid MaterialsTypes of Solid MaterialsTypes of Solid MaterialsAmorphous materials (非晶材料)

    In IC : SiO2, Si3N4Amorphous silicon: solar battery plate (solar energy� electrical energy.

    Crystalline materials (晶体材料)Single crystal materials (单晶材料)

    Silicon wafer, GaAs wafer.

    Polycrystalline materials (多晶材料)Poly-silicon (as conductor material, or resistor material)

    AmorphousAmorphousAmorphousAmorphousAmorphousAmorphousAmorphousAmorphous(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4)(SiO2, Si3N4) CrystalCrystalCrystalCrystalCrystalCrystalCrystalCrystal

    (Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)(Si wafer)

    PolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystallinePolycrystalline(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)(Poly-Si)

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Crystal StructureCrystal StructureCrystal StructureCrystal Structure

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    The periodic The periodic The periodic The periodic arrangement of atoms arrangement of atoms arrangement of atoms arrangement of atoms in the crystal is called in the crystal is called in the crystal is called in the crystal is called the the the the latticelatticelatticelattice ((((晶格晶格晶格晶格))))....

    The magnitudes aThe magnitudes aThe magnitudes aThe magnitudes a1111, b, b, b, b1111 are called the lattice are called the lattice are called the lattice are called the lattice parameters.parameters.parameters.parameters.

    Crystal Space LatticeCrystal Space LatticeCrystal Space LatticeCrystal Space Lattice

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    aaaa1111 and b and b and b and b1111 are the are the are the are the translated distance, translated distance, translated distance, translated distance, maybe not orthogonal.maybe not orthogonal.maybe not orthogonal.maybe not orthogonal.A A A A unit cell (unit cell (unit cell (unit cell (单元晶单元晶单元晶单元晶胞胞胞胞))))is is is is a small volume of the a small volume of the a small volume of the a small volume of the crystal that can be crystal that can be crystal that can be crystal that can be used to produce the used to produce the used to produce the used to produce the entire crystal.entire crystal.entire crystal.entire crystal.A A A A primitive cellprimitive cellprimitive cellprimitive cell ((((基本胞基本胞基本胞基本胞----晶胞晶胞晶胞晶胞)))) is the smallest is the smallest is the smallest is the smallest unit cell that can be unit cell that can be unit cell that can be unit cell that can be repeated to form the repeated to form the repeated to form the repeated to form the lattice.lattice.lattice.lattice.

    Unit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a CrystalUnit Cell and Primitive Cell in a Crystal

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Basic Crystal Cubic StructureBasic Crystal Cubic StructureBasic Crystal Cubic StructureBasic Crystal Cubic Structure

    Cu, Al, Ag, Au

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    Example on FCCExample on FCCExample on FCCExample on FCC’’’’s Lattice Factorss Lattice Factorss Lattice Factorss Lattice FactorsThe hard spheres or ion cores touch one another across a face diagonal �the cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge lengththe cube edge length, The Coordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination NumberCoordination Number((((((((相邻原子数)相邻原子数)相邻原子数)相邻原子数)相邻原子数)相邻原子数)相邻原子数)相邻原子数), CN

    the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded the number of closest neighbors to which an atom is bonded = number of touching atoms, CN = 12= number of touching atoms, CN = 12= number of touching atoms, CN = 12= number of touching atoms, CN = 12

    Number of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cellNumber of atoms per unit cell((((((((单位晶胞原子数)单位晶胞原子数)单位晶胞原子数)单位晶胞原子数)单位晶胞原子数)单位晶胞原子数)单位晶胞原子数)单位晶胞原子数), n = 4.For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only For an atom that is shared with m adjacent unit cells, we only count a fraction of the atom, 1/m.count a fraction of the atom, 1/m.count a fraction of the atom, 1/m.count a fraction of the atom, 1/m. In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x In FCC unit cell we have: 6 face atoms shared by two cells: 6 x 1/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 11/2 = 3; 8 corner atoms shared by eight cells: 8 x 1/8 = 1••••

    Atomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing FactorAtomic Packing Factor(密排指数)(密排指数)APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of APF = fraction of volume occupied by hard spheres = (Sum of atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)atomic volumes)/(Volume of cell) = 0.74 (maximum possible)

    ra 22=

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Crystal Planes and Miller IndicesCrystal Planes and Miller IndicesCrystal Planes and Miller IndicesCrystal Planes and Miller Indices

    (100)

    (110)

    (111)

    (111)

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Miller Index Identification ProcedureMiller Index Identification ProcedureMiller Index Identification ProcedureMiller Index Identification Procedure

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    Crystal Planes in the Cubic LatticeInter-planar spacing (d,面间距)

    The distance between adjacent The distance between adjacent The distance between adjacent The distance between adjacent planes in the set (hkl)planes in the set (hkl)planes in the set (hkl)planes in the set (hkl)

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Crystal Direction in Cubic LatticeCrystal Direction in Cubic LatticeCrystal Direction in Cubic LatticeCrystal Direction in Cubic Lattice

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    Low Miller Index Planes of Cubic Lattice

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    Miller Convention SummaryMiller Convention SummaryMiller Convention SummaryMiller Convention Summary

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    Semiconductor Crystal StructureSemiconductor Crystal StructureSemiconductor Crystal StructureSemiconductor Crystal Structure

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

    Diamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice and Zincblende LatticeDiamond Lattice(金刚石结构): Si, Ge

    Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at Diamond lattice can be thought of as an FCC structure with an extra atoms placed at a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).a/4+b/4+c/4 from each of the FCC atoms (similar to two sets of FCC structure).Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors Each Si atom has 4 nearest neighbors lattice constantlattice constantlattice constantlattice constant ,a = 5.431 ,a = 5.431 ,a = 5.431 ,a = 5.431ÅÅÅÅ (Si) (Si) (Si) (Si)

    Zincblende Lattice (闪锌矿结构): for GaAs, InP, ZnSe, etc.consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body consist of a Ga FCC with an extra As atoms placed at one quarter of the body diagonal of the cube. diagonal of the cube. diagonal of the cube. diagonal of the cube.

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    Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/Prepared by Xiulan Cheng/程秀兰程秀兰

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