c46 - fervid rfid products

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HF and UHF RFID products with embedded FRAM Page 1 of 4 Fujitsu offers HF and UHF RFID products with embedded FRAM (Ferroelectric Random Access Memory) based on Fujitsu's cutting-edge technologies. Compared to conventional E 2 PROM/Flash based RFID chips, the FerVID Family enables the same high speed data transfer rate for both reading and writing over long distances. The write endurance, specified to 10 billion cycles, is far higher than that of conventional RFID tags, thus saving cost and time in applications. The products are ISO/IEC15693, ISO/IEC 18000-3 or EPCglobal Class 1 Generation 2 compliant. Fujitsu offers wafers, sawn wafers or packaged chips. Derivatives with combined contactless and contact based SPI interface are available.  Applications Fujitsu’s RFID products with 256 Bytes to 4KBytes of FRAM, are ideally suited to many applications and markets including: I Logistics, supply chain management I Passenger tickets, subscription cards I Factory Automation I Access control I Medical and Food Industry applications I Sensor and Data logging I Maintenance tracking What is FRAM? FRAM (ferroelectric random access memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal for use in RFID products, where high security and low power consumption are important. What is Ferroelectric material? PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a typical ferroelectric material. When an electric field is applied the Zr/Ti atom shifts up or down, and this polarisation remains when the electric field is removed. It is this property that provides non-volatility and keeps the power required for data storage very low. Fujitsu is a pioneer in this innovative technology. With more than 10 years of experience in developing and manufacturing FRAM products, it has now shipped more than 300 million FRAM devices. The industry is embracing it as a mature technology. Fujitsu Semiconductor Europe Factsheet FerVID RFID products

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Page 1: C46 - FerVID RFID Products

8/2/2019 C46 - FerVID RFID Products

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HF and UHF RFID

products withembedded FRAM

Page 1 of 4

Fujitsu offers HF and UHF RFID products with

embedded FRAM (Ferroelectric Random Access

Memory) based on Fujitsu's cutting-edge

technologies.

Compared to conventional E2PROM/Flash

based RFID chips, the FerVID Family enablesthe same high speed data transfer rate for

both reading and writing over long distances.

The write endurance, specified to 10 billion

cycles, is far higher than that of conventional

RFID tags, thus saving cost and time in

applications. The products are ISO/IEC15693,

ISO/IEC 18000-3 or EPCglobal Class 1

Generation 2 compliant. Fujitsu offers wafers,

sawn wafers or packaged chips. Derivatives

with combined contactless and contact based

SPI interface are available.

 ApplicationsFujitsu’s RFID products with 256 Bytes to

4KBytes of FRAM, are ideally suited to many

applications and markets including:I Logistics, supply chain managementI Passenger tickets, subscription cardsI Factory AutomationI Access controlI Medical and Food Industry applicationsI Sensor and Data loggingI Maintenance tracking

What is FRAM?

FRAM (ferroelectric random access memory) isa non-volatile memory that uses ferroelectric

film as a capacitor for storing data. Possessing

characteristics of both ROM and RAM devices,

FRAM features high speed access, high

endurance in write mode, low power

consumption, non-volatility, and excellent

tamper resistance. It is therefore ideal for use

in RFID products, where high security and low

power consumption are important.

What is Ferroelectric material?

PZT (Pb (ZrTi)O3) material which has aperovskite-type structure (ABO3), is commonly

used as a typical ferroelectric material. When

an electric field is applied the Zr/Ti atom shiftsup or down, and this polarisation remains

when the electric field is removed. It is this

property that provides non-volatility and keeps

the power required for data storage

very low.

Fujitsu is a pioneer in this innovative

technology. With more than 10 years of 

experience in developing and manufacturing

FRAM products, it has now shipped more than

300 million FRAM devices. The industry is

embracing it as a mature technology.

Fujitsu Semiconductor Europe

FactsheetFerVID RFID products

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Factsheet Fujitsu Semiconductor FerVID RFID products

Page 2 of 4

FRAM and RFID – Key features

RangeLow power consumption can improve the

operating range.

The power delivered to the load must provide

certain threshold voltage and power for the

circuits to function. Because of the low power

consumption nature of FRAM, the operating

range could be improved within given field

strength or power density.

Speed and High Capacity

FRAM memories can be written as fast as theycan be read out. I.e. FRAM write access is

about 25 times faster than E2PROM write

access. Furthermore, the high speed access

and low power consumption allows the design

of high capacity RFID chips.

 Almost unlimited read-write times

With read-write endurance of 1E10, FRAM is

more durable and suitable for applications,

which requires frequent write. This is an

important feature for RFID based production

line control, where tags shall be reused many

times.

(Reader/Writer)MCU FRAMSPI

RF

(PCB)

Gamma Radiation Hardness

Unlike E2PROM, Ferroelectric Memories do not

lose their content due to radiation exposure.Therefore FRAM based RFID tags are ideally

suited for medical applications or applications

in the food industry where sterilization is

performed by irradiation. FRAM data is

protected against up to 50kGy gamma ray

sterilization

Dual Interface

The device MB97R803A is available in two

different types. A conventional contactless

EPCglobal RFID product and a derivative with

an additional contact based SPI interface. Thisdual interface type can be implemented as

part of a Microcontroller based embedded

system. Data, captured by sensors and the

Microcontroller, might be stored in the FRAM

device. Via the contactless UHF interface, the

user has easy and convenient access to this

data. Vice versa, the user can transfer

configuration and control data to the

embedded system via the RF field. Many

applications like logistic tracking systems, data

logging, information displays or vending

machines, can benefit from this feature.

Key Features SummaryI 13.56MHz, ISO15693, ISO18000-3

I 860-900MHz UHF EPCglobal C1G2 standardI High capacity memory, up to 4kB FRAMI Long range read/write accessI High endurance: 1010 read/write cyclesI High speed programming:

- 75.52µs/8Bytes blockI Gamma ray resistance up to 50kGyI Dual Interface option:

- UHF and SPI

Block diagram of a dual interface system

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Page 3 of 4

Item MB89R118C MB89R119B MB97R803A  

Delivery form Wafer Wafer Wafer

Sawn wafer Sawn wafer Sawn wafer

16-pin TSSOP package

Memory capacity 2kBytes FRAM 256Bytes FRAM 4KByte FRAM

User memory area 2000Bytes 232Bytes 3.5kByte

System memory area - - (including Reserved, EPC, and TID): 384 Byte

Operating frequency 13.56MHz ± 7kHz 13.56MHz ± 7kHz 860MHz to 960 MHz

Standards ISO/IEC 15693* ISO/IEC 15693* EPCglobal Class 1 Generation 2 (C1G2)

ISO/IEC 18000-3 (Mode 1)* ISO/IEC 18000-3 (Mode 1)*

Modulation type 10%ASK, 100%ASK 10%ASK, 100%ASK DSB-ASK, SSB-ASK, PR-ASK

 Ambient operating temperature -20 °C to +85 °C -20 °C to +85 °C -20 °C to +85 °C Ambient storage temperature -40 °C to +85 °C -40 °C to +85 °C -40 °C to +85 °C

Input capacitance 24pF and 96pF 24pF and 96pF -

Data retention period 10 years at 70 °C 10 years at 70 °C 10 years at 70 °C

Data read/write endurance 1010 cycles 1010 cycles 1010 cycles

Data integrity 16-bit CRC per block 16-bit CRC per block 16-bit CRC

 Anticollision 30 tags per second 30 tags per second yes, EPCglobal C1G2 Ver. 1.2.0, compliant

Data Rx Rate Reader/Writer->Tag 26.48kbits/sec 26.48kbits/sec 26.7kbps to 128kbps

52.96kbits/sec with Fast commands 52.96kbits/sec with Fast commands

Data Tx Rate Tag->Reader/Writer 26.48kbits/sec 26.48kbits/sec 40kbps to 640kbps

52.96kbits/sec with Fast commands 52.96kbits/sec with Fast commandsExamples of data reading *1 1525ms (2048 Bytes) - -

Examples of data writing *2 1413ms (2000 Bytes) - -

UID/TID 64bits 64bits 256bits

Others 8Bytes/block configuration 8Bytes/block configuration Optional SPI interface

Reading up to 256 blocks using Reading up to 256 blocks using Permalock Command

custom lump commands custom lump commands

EAS command (Electronic Article EAS command (Electronic Article

Surveillance) Surveillance)

SPI interface supply voltage - - 3.3V ±0.3 V (required for SPI

access only)

Power supply current - - <500µA  

Package - - 16-pin TSSOP (FPT-16P-M08)

(11-pins functional)

SPI clock  - - 2MHz

* Partly not supported

*1 : Read with the Read Multiple Blocks command (UID contained)

*2 : Write with the Write Multiple Blocks command (UID contained)

16-pin plastic TSSOP

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Page 4 of 4

Factsheet Fujitsu Semiconductor FerVID RFID products

FSEU-C46-4FEB11

[email protected]://emea.fujitsu.com/fram

 All company and product trade marks and registered trademarks used throughout this literature are acknowledged asthe property of their respective owners.

Embedded RF Board with FM3Microcontroller and sensors

MCU Board specificationI MCU: 32-bit ARM Cortex M3 Fujitsu

MB9BF506RI Sensors: 3axis accelerometer, illumination,

temperature and humidityI LCD, USB, RS232I Extension Header (I2C) for additional

external devicesI SPI connection to antenna boardI JTAG I/F for firmware update and debugging

 Antenna Board specificationI FRAM embedded RFID device with serial SPI

I/F: MB97R803A UHF (860-960MHz)

MCU Board

Antenna Board

FRAM Embedded

RFID ICTemperature and

Humidity SensorIllumination Sensor

FM3 MCU MB9BF5063axis Accelerometer

Reader / writer

 Activation Status

Embedded RF board with FM3 MCU, sensors and UHF RFID chip

 ApplicationsI Sensor data logging into FRAM via SPII System parameters loaded from FRAM

via SPII Text is loaded from FRAM to change

information on LCDI MCU firmware update from FRAM via SPII Read logged sensor data via RF interfaceI Transfer system parameters to FRAM via

contactless RF interfaceI Transfer LC-Display text into FRAM via

RF interfaceI Contactless transfer of MCU firmware code

into FRAM via RF interface