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C) LECTURES/CONTRIBUTIONS AT INTERNATIONAL CONFERENCES, SYMPOSIA, AND SEMINARS

(* marks full publications in conference proceedings and/ or journal issues)

C 1 I. Broser and J. GutowskiHigh-Excitation Spectroscopy of Bound Excitons in CdSXVIII Meeeting of the Study Group on Solid State Spectroscopy of the Parliamentary Assembly of the Council of Europe - Bound Excitons - Malmö (Sweden) 1984

C 2* I. Broser and J. GutowskiHigh-Density Excitation and Raman Spectroscopy of the Bound-Exciton Complex (A°,X) in CdS1984 Int. Conf. on Luminescence, Madison (Wisconsin, USA)J. Luminescence 31/32 (1984) 397

C 3* I. Broser and J. GutowskiHigh-Density Excitation Spectroscopy of Stimulated Transitions of Bound- and Biexciton Complexes in CdS2nd Int. Conf. on II-VI Compounds, Aussois (France) 1985J. Crystal Growth 72 (1985) 313

C 4 T. Hönig and J. GutowskiExcitation Spectroscopy of Stimulated I1-TA (PM) Band Emission in CdS5th General Conf. of the Condensed Matter Division of the EPS, Berlin 1985Europhysics Conference Abstracts 9A (1985) PTh-04-068

C 5 J. Gutowski, I. Broser, and H. PerlsHigh-Excitation-Density Magnetooptics of Excited States of the Donor-Exciton Complex (D°,X) in CdS 5th General Conf. of the Condensed Matter Division of the EPS, Berlin 1985Europhysics Conference Abstracts 9A (1985) PTh-04-075

C 6 I. Broser and J. GutowskiMagneto-Excitation Spectroscopy of the High-Density Transitions M and P in CdS5th General Conf. of the Condensed Matter Division of the EPS, Berlin 1985Europhysics Conference Abstracts 9A (1985) PFr-02-028

C 7 J. Schott, J. Gutowski, and I. BroserHigh-Density Resonant Brillouin Scattering at Bound-Exciton States in CdS5th General Conf. of the Condensed Matter Division of the EPS, Berlin 1985Europhysics Conference Abstracts 9A (1985) PTh-04-074

C 8 J. Gutowski (invited)Exciton ComplexesEuropean Workshop: Spectroscopy of Sub-atomic Species in Nonmetallic Solids (Exciton, Positronium, Muonium), Council of Europe, Vitry-sur-Seine (France) 1985

C 9 J. Gutowski and I. BroserNew Aspects of the Creation and Recombination Mechanisms of Biexcitons in II-VI Compounds6th General Conf. of the Condensed Matter Division of the EPS, Stockholm, (Sweden) 1986, Europhysics Conference Abstracts 10A (1986) C41

C 10* J. Gutowski, T. Hönig, and I. BroserExperimental Evidence of Bound Multiexciton Complexes in CdS?18th Int. Conf. on the Physics of Semiconductors, Stockholm, (Sweden) 1986 Ed. O. Engström, World Scientific Publishing (Singapur) 1987, p. 1413

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C 11 J. Gutowski (invited)Spectroscopy of Exciton Complexes in CdS and Related II-VI Compounds under High-Density ConditionsTechnical University Warsaw (Poland) 1986

C 12 T. Hönig, J. Gutowksi, and I. BroserNonlinear Optical Transitions of Bound Excitons in CdS7th General Conf. of the Condensed Matter Division of the EPS, Pisa (Italy) 1987 Europhysics Conference Abstracts 11A (1987) A 98

C 13 A. Hoffmann, J. Gutowski, and I. BroserMagnetic-Field and Stress Dependent Spectroscopy of Bound Excitons with Large Binding Energies in CdS7th General Conf. of the Condensed Matter Division of the EPS, Pisa (Italy) 1987 Europhysics Conference Abstracts 11A (1987) A99

C 14* J. Gutowski (invited)Exciton Complexes in II-VI Materials3rd Int. Conf. on II-VI Compounds, Monterey (California, USA) 1987J. Crystal Growth 86 (1988) 528

C 15* T. Hönig, J. Gutowski, and I. BroserOptical Nonlinearity of Bound Single and Multiexcitons in CdS3rd Int. Conf. on II-VI Compounds, Monterey (California, USA) 1987J. Crystal Growth 86 (1988) 576

C 16* J. Gutowski, T. Hönig, N. Presser, and I. BroserExcitation and Transmission Spectroscopy of Bound Exciton Complexes in Wide-Gap II-VI Semiconductors under High Excitation Densities1987 Int. Conf. on Luminescence, Beijing (China)J. Luminescence 40/41 (1988) 433

C 17 J. Gutowski, T. Hönig, and I. BroserNonlinear Optical Properties of Excitonic Complexes in Wide-Gap II-VI SemiconductorsIntern. Workshop `Nonlinear Optics and Excitation Kinetics of Semiconductors'(NOEKS), Bad Stuer (GDR) 1987

C 18* J. Gutowski (invited)Optically Nonlinear and Bistable Behavior of Exciton Complexes in II-VI SemiconductorsColloquium II-VI Semiconductors, Karlsruhe (FRG) 1988, p. F 5

C 19* J. Gutowski (invited)Excitonic Complexes in Wide-Gap II-VI SemiconductorsNATO Advanced Research Workshop on Growth and Optical Properties of Wide-Gap II-VI's Low Dimensional Semiconductors, Regensburg (FRG), August 1988,Eds. T.C. McGill, C. M. Sotomayor-Torres, W. Gebhardt, Plenum Press (New York & London) 1989, p. 139

C 20* T. Hönig and J. GutowskiOptical Nonlinearity and Bistability in the Bound-Exciton Energy Range of CdSInt. Conf. on Optical Nonlinearity and Bistability of Semiconductors, Berlin (GDR) 1988 Phys. Stat. Sol. (b) 150 (1988) 833

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C 21* J. Gutowski, T. Hönig, J. Hollandt, and I. BroserContribution of Impurities and Impurity-Exciton Complexes to Optical Nonlinearity and Bistability in CdS19th Int. Conf. on the Physics of Semiconductors, Warsaw (Poland), August 1988, Ed. W. Zawadzki, Polish Acad. of Science 1988, p. 1311

C 22* J. Gutowski and A. HoffmannMagneto-Optics of Excitons Bound to Dislocation in CdS15th Intern. Conf. on Defects in SemiconductorsBudapest (Hungary) 1988Materials Science Forum 38-41 (1989) 1391

C 23 J. Gutowski (invited)Optical Nonlinearity and Bistability of Excitonic Complexes in II-VI CompoundsState University of New York at Stony Brook,Stony Brook (N.Y., USA), Nov. 10, 1988

C 24 J. Gutowski (invited)Nonlinear Optics in the Exciton and Band-Edge Regime of II-VI Semiconductors - (Nichtlineare Optik im Exzitonen- und Bandkantenbereich von II-VI-Halbleitern)Humboldt-Universität zu Berlin (GDR), Dec. 5, 1988

C 25 J. Gutowski (invited)Nonlinear Optics and Optical BistabilityUniversität Innsbruck (Austria), June 12, 1989

C 26* T. Hönig, J. Gutowski, and I. BroserImpurity-related Optical Nonlinearity and Bistability in the Band-gap Region of CdS:In7th Int. Conf. on Dynamical Processes in Excited States of Solids, Athens (Georgia, USA) 1989J. Luminescence 45 (1990) 194

C 27* G. Kudlek, N. Presser, J. Gutowski, S. M. Durbin, D. Menke, M. Kobayashi, and R. L. GunshorHigh-density Luminescence and Excitation Spectroscopy of MBE grown ZnSe/GaAs Epilayers4th Int. Conf. on II-VI Compounds, Berlin (West) 1989J. Crystal Growth 101 (1990) 667

C 28* J. Hollandt, J. Gutowski, and I. BroserA Detailed Study Concerning the Main Aspects Influencing Thermally Induced Optical Bistability in CdSInt. Workshop `Nonlinear Optics and Excitation Kinetics of Semiconductors II' (NOEKS II), Bad Stuer (GDR) 1989Phys. Stat. Sol. (b) 159 (1990) 205

C 29* N. Presser, G. Kudlek, J. Gutowski, S. M. Durbin, D. Menke, M. Kobayashi, and R. L. GunshorHigh-density Spectroscopy of ZnSe/GaAs Epilayers in the Near-Band-Edge RegionInt. Workshop `Nonlinear Optics and Excitation Kinetics of Semiconductors II' (NOEKS II), Bad Stuer (GDR) 1989Phys. Stat. Sol. (b) 159 (1990) 443

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C 30* T. Hönig, J. Gutowski, and I. BroserCarrier-Induced Pulse Narrowing in Indium-Doped CdSInt. Workshop `Nonlinear Optics and Excitation Kinetics of Semiconductors II' (NOEKS II), Bad Stuer (GDR), 1989Phys. Stat. Sol. (b) 159 (1990) 363

C 31 A. Hoffmann, G. Kudlek, R. Heitz, N. Presser, J. Gutowski, G. F. Neumark, and R. N. BhargavaMagnetooptics and Excitation Spectroscopy of Na-Acceptor-Bound Excitons in ZnSeMarch Meeting of the American Physical Society, Anaheim, CA (USA) 1990

C 32 J. Gutowski (invited)Nonlinear Optical Properties on II-VI Bulk and Thin-Film MaterialDept. of Physics, Linköping University, Linköping (Sweden), March 9, 1990

C 33 J. Gutowski (invited)Optical Nonlinearities and Bistability in II-VI Bulk and Epitaxial-Layer MaterialsDept. of Physics, Lund University, Lund (Sweden), March 12, 1990

C 34 J. Gutowski (invited)Optical Properties of II-VI Bulk and Thin Film Materials Institute de Physique et Chimie des Materiaux, Strasbourg (France), May 5, 1990

C 35* G. Kudlek, A. Hoffmann, R. Heitz, C. Fricke, J. Gutowski, G. F. Neumark, and R.N. BhargavaTerm Structure of Bound Excitons in Cubic ZnSe:Na1990 Int. Conf. on Luminescence, Lisbon (Portugal),J. Luminescence 48-49 (1991) 138

C 36* G. Kudlek, N. Presser, J. Hollandt, J. Gutowski, S. M. Durbin, D. Menke, M. Kobayashi, and R. L. GunshorLong-Term Stable Thermally Induced Absorptive Optical Bistability in MBE-Grown ZnSe Epilayers5th Int. Conf. on the Physics of Electro-Optic Microstructures and Microdevices, Heraklion (Greece) 1990Superlattices and Microstructures 8 (1990) 381

C 37* T. Hönig, J. Gutowski, and I. BroserImpurity-related Switching Dynamics and Pulse Narrowing in CdS20th Int. Conf. Phys. Semiconductors, Thessaloniki (Greece) 1990Conf. Proceedings, Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific (Singapore) 1990, p. 1871

C 38* G. Kudlek, J. Gutowski, S. Durbin, D. Menke, M. Kobayashi,and R. L. GunshorHigh-resolution Magnetooptics and Excitation Spectroscopy of Ultra-pure MBE-grown ZnSe/GaAs Epilayers20th Int. Conf. Phys. Semiconductors, Thessaloniki (Greece) 1990Conf. Proceedings, Eds. E. M. Anastassakis, J. D. Joannopoulos, World Scientific (Singapore) 1990, p. 1381

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C 39* A. Pesek, K. Hingerl, K. Lischka, E. Fantner, T. Ryan, G. Kudlek, J. Gutowski, and B. MüllerA Novel Experimental Method for the Measurement of the Deformation Potential Constant of Semiconductors Using Strained Layer Heterostructures20th Int. Conf. Phys. Semiconductors, Thessaloniki (Greece) 1990Conf. Proceedings, Eds. E. M. Anastassakis, J. D. Joannapoulos, World Scientific (Singapore) 1990, p. 981

C 40* N. Presser, G. Kudlek, J. Gutowski, S. M. Durbin, D. R. Menke,M. Kobayashi, and R. L. GunshorNonlinear Transmission of ZnSe Epilayers in the Near-Band-Edge Region5th Int. Conf. on Superlattices and Microstructures, Berlin (GDR), 1990 Superlattices and Microstructures 10 (1991) 247

C 41 J. Gutowski (invited)Optical Nonlinearity in II-VI MaterialsInstitute of Technology, Pasadena (California, USA),August 28, 1990

C 42 J. Gutowski (invited)Nonlinear Optical Properties of II-VI Bulk and Epilayer MaterialsSchool of Eletrical Engineering, Purdue University, West Lafayette (Indiana, USA), Sept. 3, 1990

C 43 J. Gutowski (invited)Nonlinear Optical Properties and Optical Bistability of II-VI Bulk and Epilayer MaterialsMIT, Cambridge (Mass., USA), Sept. 14, 1990

C 44 J. Gutowski (invited)Nonlinear Optical Properties and Optical Bistability of II-VI Bulk and Epilayer MaterialPhilips Labs, Briarcliff Manor (N.Y., USA), Sept. 16, 1990

C 45 A. Pesek, K. Hingerl, K. Lischka, E. Fantner, T. Ryan, G. Kudlek, J. Gutowski, and B. MüllerA Novel Experimental Method for the Measurement of the Deformation Potential Constant of Semiconductors Using Strained Layer HeterostructuresTagung der Österreichischen Physikalischen Gesellschaft, Salzburg (Austria) 1990

C 46* G. Kudlek, J. Gutowski, D. Mathine, M. Kobayashi, and R. L. GunshorOptical Properties of MBE-Grown ZnTe EpilayersSPIE Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Aachen (FRG) 1990SPIE 1361 (1990) 150

C 47* K. Hingerl, A. Pesek, H. Sitter, A. Krost, D. R. T. Zahn, W. Richter, G. Kudlek and J. GutowskiGrowth and Characterization of ZnSe and ZnTe Grown on GaAs by Hot-Wall EpitaxySPIE Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Aachen (FRG) 1990SPIE 1361 (1990) 383

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C 48* J. Gutowski (invited)Optical Properties of II-VI Epitaxial LayersE-MRS Advanced Research Workshop on Wide-Gap II-VI Semiconductors, Montpellier (France) 1991Semicond. Science and Technology 6 (1991) A 51

C 49* K. Hingerl, H. Sitter, J. Lilja, E. Kuusisto, K. Imai, M. Pessa, G. Kudlek,and J. GutowskiElectrical and Optical Properties of Li-Doped MBE-Grown p-Type ZnSe FilmsE-MRS Advanced Research Workshop on Wide-Gap II-VI Semiconductors, Montpellier (France) 1991Semicond. Science and Technology 6 (1991) A 72

C 50* G. Kudlek, N. Presser, and J. GutowskiResonant Raman Scattering at Bound Excitons in ZnSe/GaAs EpilayersE-MRS Advanced Research Workshop on Wide-Gap II-VI Semiconductors, Montpellier (France) 1991Semicond. Science and Technology 6 (1991) A 83

C 51* G. Kudlek, N. Presser, J. Gutowski, K. Hingerl, E. Abramof, and H. SitterPhotoluminescence and Excitation Spectroscopy of ZnTe/ GaAs Epilayers Grown by Hot-Wall EpitaxyE-MRS Advanced Research Workshop on Wide-Gap II-VI Semiconductors, Montpellier (France) 1991Semicond. Science and Technology 6 (1991) A 90

C 52 J. Gutowski (invited)Optical Properties of Epitaxial II-VI HeterostructuresUniversity of Linz (Austria), March 11, 1991

C 53 K. Hingerl, H. Sitter, G. Kudlek, and J. GutowskiElectrical and Optical Properties of Li Doped ZnSe EpilayersSeminar "Elements and Technology of Electronic Constructions"Großarl (Austria), March 22-23, 1991

C 54 R. Schmolke, E. Schöll, T. Hönig, M. Nägele, and J. GutowskiA Model for Impurity-Related Optical Bistability in II-VI SemiconductorsSIOE Semiconductor and Integrated Electronics Seminar,University of Wales, College of Cardiff, March 25-27, 1991

C 55* G. Kudlek, N. Presser, J. Gutowski, J. Lilja, E. Kuusisto, K. Imai, M. Pessa,K. Hingerl, and H. SitterExciton Complexes in ZnSe Layers: A Tool for Probing the Strain Distribution5th Int. Conf. on II-VI Compounds, Tamano (Japan) 1991J. Crystals Growth 117 (1992) 309

C 56* G. Kudlek, N. Presser, J. Gutowski, K. Hingerl, E. Abramof, and H. SitterImpurity and Defect Distribution in ZnTe/GaAs Epilayers of Different Thickness 5th Int. Conf. on II-VI Compounds, Tamano (Japan) 1991J. Crystal Growth 117 (1992) 290

C 57* R. Schmolke, E. Schöll, and J. GutowskiA Model for Impurity-Related Optical Bistability in II-VI Semiconductors 5th Int. Conf. on II-VI Compounds, Tamano (Japan) 1991J. Crystal Growth 117 (1992) 650

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C 58* G. Kudlek, J. Hollandt, N. Presser, J. Gutowski, K. Hingerl, and H. SitterDispersive and Absorptive Thermally Induced Optical Bistability in ZnSe Epilayers8th Int. Conf. on Dynamical Processes in Excited States of Solids,Leiden (Netherlands) 1991 J. Luminescence 53 (1992) 363

C 59* N. Presser, G. Kudlek, and J. GutowskiExcitonic Processes in Highly Excited ZnSe Epilayers 8th Int. Conf. on Dynamical Processes in Excited States of Solids, Leiden (Netherlands) 1991J. Luminescence 53 (1992) 435

C 60 G. Kudlek, C. Fricke, R. Heitz, N. Presser, A. Hoffmann, and J. GutowskiRadiative Excitonic Recombinations in Strained ZnSe Epilayer12th General Conf. of the Condensed Matter Division of the EPS, Prague (Czechoslovakia) 1992

C 61 N. Presser, C. Fricke, G. Kudlek, R. Heitz, A. Hoffmann, J. Gutowski, and I. BroserDynamical Energy Transfer at the Interface of ZnSe/GaAs Epilayers12th General Conf. of the Condensed Matter Division of the EPS, Prague (Czechoslovakia) 1992

C 62* G. Kudlek, C. Fricke, N. Presser, R. Heitz, A. Hoffmann, J. Gutowski, and I. BroserDynamical Behaviour of Excitons in ZnSe/GaAs Heterostructures21st Int. Conf. Phys. Semiconductors, Beijing (China) 1992 Eds. P. Jiang, H. Zheng, World Scientific (Singapore) 1992, p. 1168

C 63* G. Kudlek, N. Presser, and J. Gutowski,Stress Effects and Impurity Nature in (A°,X) Complexes in ZnTe/GaAs Epilayers21st Int. Conf. Phys. Semiconductors, Beijing (China) 1992 Eds. P. Jiang, H. Zheng, World Scientific (Singapore) 1992, p. 1669

C 64* G. H. Kudlek, U. W. Pohl, C. Fricke, R. Heitz, A. Hoffmann, J. Gutowski, and I. BroserElectronic Structure and Dynamical Behaviour of Different Bound-Exciton Complexes in ZnSe Bulk Crystals7th Trieste Semiconductor Symposium on Wide-band-gap Semiconductors, Trieste (Italy) 1992Physica C 185 (1993) 325

C 65* J. Gutowski and A. Hoffmann (invited)Optical Nonlinearities and Excitation Dynamics in II-VI Bulk and Epitaxial MaterialsEuropean Workshop on II-VI Semiconductors, Aachen 1992 Advanced Materials for Optics and Electronics 3 (1994) 15

C 66* R. Schmolke, E. Schöll, M. Nägele, and J. GutowskiDynamics of Impurity-Related Optical Switching in CdS Near the Band EdgeEuropean Workshop on II-VI Semiconductors, Aachen 1992 Advanced Materials for Optics and Electronics 3 (1994) 41

C 67* M. Nägele, D. Weckendrup, U. Neukirch, and J. GutowskiStimulated Emission in ZnSxSe1-x/ ZnSe Heterostructures Grown by MOVPEEuropean Workshop on II-VI Semiconductors, Aachen 1992 Advanced Materials for Optics and Electronics 3 (1994) 73

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C 68 P. Bäume, F. Kubacki, and J. GutowskiCharacterization of Semiconductors by Lineshape Analysis of Donor-Acceptor-Pair (DAP) Spectra13th General Conf. of the Condensed Matter Division of the EPS, Regensburg (Germany) 1993, Abstract Book

C 69 D. Weckendrup, U. Neukirch, J. Gutowski, K.P. Geyzers, and M. HeukenGain Dynamics of ZnSe/ZnSxSe1-x Multiple Quantum Well Structures13th General Conf. of the Condensed Matter Division of the EPS, Regensburg (Germany) 1993, Abstract Book

C 70* U. Neukirch, D. Weckendrup, J. Gutowski, D. Hommel, and G. LandwehrDynamical Properties of Excitons in Zn1-xCdxSe/ZnSe Quantum Wells andZn1-xCdxSe Epilayers Grown by Molecular Beam Epitaxy6th Int. Conf. on II-VI Compounds, Newport (R. I., USA), 1993J. Crystal Growth 138 (1994) 861

C 71* R. Schmolke, E. Schöll, M. Nägele, and J. GutowskiNonlinear Optical Switching Fronts in CdS6th Int. Conf. on II-VI Compounds, Newport (R. I., USA), 1993J. Crystal Growth 138 (1994) 213

C 72* P. Bäume, F. Kubacki, and J. GutowskiCharacterization of Impurities in II-VI Semiconductors by Time-resolved Lineshape Analysis of Donor-Acceptor-Pair Spectra6th Int. Conf. on II-VI Compounds, Newport (R.I., USA), 1993J. Crystal Growth 138 (1994) 266

C 73* M. Nägele, W. Ebeling, J. Gutowski, K.P. Geyzers, and M. HeukenNonlinear Transmission Dynamics of ZnSxSe1-x/ZnSe andZnSxSe1-x/ZnSySe1-y (x > y) Waveguide Structures6th Int. Conf. on II-VI Compounds, Newport (R. I., USA), 1993J. Crystal Growth 138 (1994) 842

C 74* U. Neukirch, K. Wundke, D. Weckendrup, J. Gutowski, D. Hommel,and G. LandwehrUltrafast Differential-transmission Spectroscopy of Excitons in Strained ZnSe Layers and Zn1-xCdxSe/ZnSe Quantum WellsEXCON '94, Darwin (Australia) 1994SPIE 2362 (1995) 74

C 75* A. Dießel, J. Gutowski, M. Heuken, and D. HommelGain Mechanisms in Exciton-Localizing ZnSe-Based Quantum Well StructuresEXCON '94, Darwin (Australia) 1994SPIE 2362 (1995) 515

C 76* D. Weckendrup, U. Neukirch, M. Saschek, J. Gutowski, D. Hommel,and G. LandwehrCoherent Dynamics of Excitons in ZnSe Epilayers22. Int. Conf. on the Physics of Semiconductors,Vancouver (Canada) 1994,Ed. D. L. Lockwood, World Scientific (Singapore) 1995, p. 409

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C 77* J. Gutowski, A. Dießel, U. Neukirch, D. Weckendrup, T. Behr, B. Jobst, and D. Hommel (invited)Exciton Dynamics and Gain Mechanisms in Optically Pumped ZnSe-Based Laser StructuresInt. Workshop on ZnSe-Based Blue-Green Laser Structures, Würzburg (Germany) 1994Phys. Stat. Sol. (b) 187 (1995) 423

C 78* H. Grempel, J. Gutowski, O.S. Ferreira, H. Sitter, D. Hommel, and G. LandwehrExcitonic Processes in Highly Excited Zn1-xCdxSe/ZnSe and CdSe/ZnSe Single and Multiple Quantum WellsEuropean Workshop on II-VI Semiconductors, Linz (Austria) 1994Materials Science Forum 182-184 (1995) 183

C 79* A. Wulfes, J. Gutowski, E. Kurtz, D. Hommel, M. Scholl, and M. HeukenAnalytical Model for Calculating Exciton Energies as Measured inZn1-xCdxSe/ZnSe and ZnSe/ZnSxSe1-x Quantum WellsEuropean Workshop on II-VI Semiconductors, Linz (Austria) 1994Material Science Forum 182-184 (1995)191

C 80* F. Kubacki, J. Gutowski, P. Ruppert, D. Hommel, and G. LandwehrReflectance Spectroscopy of Excitons in Biaxially Strained II-VI Heterostructures under Externally Applied Uniaxial StressEuropean Workshop on II-VI Semiconductors, Linz (Austria) 1994Materials Science Forum 182-184 (1995) 223

C 81* M. Nägele, J. Gutowski, K.-P. Geyzers, and M. HeukenA Simple Model for Describing the Nonlinear Transmission Dynamics ofZnSxSe1-x/ZnSySe1-y (x > y) Waveguide StructuresEuropean Workshop on II-VI Semiconductors, Linz (Austria) 1994Materials Science Forum 182-184 (1995) 231

C 82 J. Gutowski (invited)Dynamics of Excitons and Lasing Mechanisms in II-VI Quantum Well StructuresEuroform Seminar on II-VI Semiconductors for Optoelectronics, Aachen (Germany) 1994, Handout to Participants

C 83* D. Weckendrup, M. Saschek, U. Neukirch, J. Gutowski, S.O. Ferreira, and H. SitterPhase Relaxation of Excitons in Zn1-xCdxSe/ZnSe Multiple-Quantum-Well Structures4th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Gosen (Germany) 1994Phys. Stat. Sol. (b) 188 (1995) 507

C 84* J. Gutowski, A. Dießel, U. Neukirch, D. Weckendrup, K. Wundke, B. Jobst, D. Hommel, S. O. Ferreira, and H. Sitter (invited)Ultrafast Dynamics of Excitons and Lasing in II-VI Quantum Well StructuresInt. Conf. on Semiconductor Heteroepitaxy, Montpellier (France) 1995, Proc., Eds. B. Gil and R. Aulombard,World Scientific (Singapore) 1995, p. 138

C 85* P. Bäume, J. Gutowski, E. Kurtz, D. Hommel, and G. LandwehrIntensity-Dependent Energy and Lineshape Variation of Donor-Acceptor-Pair Bands in Highly Compensated ZnSe:N7th Int. Conf. on II-VI Compounds and Devices, Edinburgh (Scotland, U.K.) 1995J. Crystal Growth 159 (1996) 771

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C 86* W. Ebeling, B. S. Ryvkin, J. Gutowski, K. Schüll, B. Jobst, and D. HommelModulator and Saturable Absorber for Integration with CdZnSe/ZnSe/ZnMgSSe QW-Laser Diodes7th Int. Conf. on II-VI Compounds and Devices, Edinburgh (Scotland, U.K.) 1995J. Crystal Growth 159 (1996) 893

C 87* A. Dießel, W. Ebeling, J. Gutowski, B. Jobst, K. Schüll, D. Hommel, M. F. Pereira Jr., H. Güldner, and K. HennebergerBleaching of Excitonic Absorption in II-VI Laser Diodes under Lasing Conditions7th Int. Conf. on II-VI Compounds and Devices, Edinburgh (Scotland, U.K.) 1995J. Crystal Growth 159 (1996) 661

C 88 W. Ebeling, J. Gutowski, M. Behringer, and D. HommelImpurity Related Luminescence from Quantum Wells in II-VI Laser Diodes7th Int. Conf. on II-VI Compounds and Devices, Edinburgh (Scotland, U.K.) 1995

C 89* K. Wundke, U. Neukirch, F. Kubacki, J. Gutowski, and D. HommelPropagation of Exciton Polaritons in ZnSe/ZnSexSe1-x 7th Int. Conf. on II-VI Compounds and Devices, Edinburgh (Scotland, U.K.) 1995J. Crystal Growth 159 (1996) 800

C 90* K. Wundke, U. Neukirch, J. Gutowski, D. Hommel, S. Sukarno-Ferreira, and H. SitterCoherent Effects in Nonlinear Absorption of Thin ZnSe Layers and Zn1-xCdxSe/ZnSe Quantum Wells under Resonant ExcitationInternational Conference on Dynamical Processes in the Excited States of Solids (DPC ´95), Cairns (Australia) 1995 Journal of Luminescence 66 & 67 (1996) 65

C 91* H. Grempel, J. Gutowski, D. Hommel, and G. LandwehrExcitonic Processes in Highly Excited Zn1-xCdxSe/ZnSe Single Quantum Wells10th. Int. Conf. on Ternary and Multinary Compounds, Stuttgart 1995Journal Crystal Research and Technology 31 (1996) 321

C 92* P. Michler, A. Dießel, W. Ebeling, J. Gutowski, B. Jobst, D. Hommel, K. Schüll, J. Nürnberger, G. Landwehr, M.F. Pereira Jr., and K. HennebergerBleaching of Excitons in II-VI Laser Diodes under Lasing ConditionsInt. Symp. on Blue Laser and Light Emitting Diodes, Chiba (Japan) 1996 Proc., Eds. A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda, Ohnsha Ltd. (Tokyo) 1996, p. 147

C 93* B. Jobst, S. Strauf, P. Bäume, E. Kurtz, H. Schenk, J. Gutowski, D. Hommel, and G. LandwehrInfluence of the Sulphur and Magnesium Content on Donor-Acceptor-Pair Emission in Nitrogen-Plasma Doped Ternary and QuaternaryZn1-xMgxSySe1-yInt. Symp. on Blue Laser and Light Emitting Diodes, Chiba (Japan) 1996 Proc., Eds. A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda, Ohnsha Ltd. (Tokyo) 1996, p. 409

C 94* K. Wundke, U. Neukirch, D. Hommel, and J. GutowskiExcitonic Stark Shift for Above-Resonance ExcitationXX. Int. Quantum Electronics Conf., Sydney (Australia), 1996OSA Technical Digest Series (Optical Society of America, Washington, USA) 1996, p. ThQ3

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C 95* P. Bäume, J. Gutowski, and D. HommelCalculation of the Lineshape of Donor-Acceptor-Pair Bands in Compensated ZnSe:N23rd Int. Conf. on the Physics of Semiconductors, Berlin (Germany) 1996Proc. Eds. M. Scheffler and R. Zimmermann, World-Scientific (Singapore) 1996, p. 2957

C 96 P. Michler, A. Dießel, W. Ebeling, M. Vehse, J. Gutowski, B. Jobst, M. Behringer, D. Hommel, K. Schüll, G. Landwehr, M. F. Pereira Jr., and K. HennebergerExcitonic Optical Non-Linearities in II-VI Laser Diodes under Lasing ConditionsESPRIT Working Group "Blue and UV Laser Diodes-BULD", Valbonne (France), Sept. 1996, Abstract Book

C 97 W. Ebeling, J. Gutowski, K. Schüll, B. Jobst, D. HommelElectrooptic Properties of II-VI Laser DiodesESPRIT Working Group "Blue and UV Laser Diodes-BULD", Valbonne (France), Sept. 1996, Abstract Book

C 98 P. Bäume, J. Gutowski, and D. HommelLine-shape Analysis of Donor-Acceptor-Pair Bands (DAP) in Compensated and Uncompensated SemiconductorsESPRIT Working Group "Blue and UV Laser Diodes-BULD", Valbonne (France), Sept. 1996, Abstract Book

C 99* J. Gutowski, G. Bley, P. Michler, U. Neukirch, and K. Wundke (invited)Dynamical Properties of Optical Excitations in II-VI StructuresJapanese-German Seminar on II-VI Semiconductors Bremen (Germany) 1997Phys. Stat. Sol. (b) 202 (1997) 873

C 100* J. Gutowski, U. Neukirch, P. Michler, B. Haase, and K. Wundke (invited)Excitonic Optical Nonlinearities and Dynamics in II-VI Heterostructures and Laser Diodes8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 662

C 101* K. Suzuki, U. Neukirch, J. Gutowski, N. Takojima, T. Sawada, and K. ImaiRecombination Kinetics of S1 and S2 Bands in ZnSe-ZnTe Superlattices8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 882

C 102* G. Bley, U. Neukirch, and J. GutowskiExciton Polariton Diffusion in ZnSe Layers8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 1095

C 103* P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel,M. F. Pereira Jr., and K. HennebergerOptical Gain Characteristics and Excitonic Nonlinearities in II-VI Laser Diodes 8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 575

C 104* P. Bäume, S. Strauf, J. Gutowski, M. Behringer, and D. HommelAnalysis of Time-resolved Donor-acceptor-pair Spectra of ZnSe:Li and ZnSe:N8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 531

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C 105* K. Wundke, U. Neukirch, P. Michler, J. Gutowski, M. Behringer, and D. HommelSpectro-temporal Gain Dynamics of Optically Pumped II-VI Multiple-Quantum-Well Structures8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 637

C 106* W. Ebeling, M. Behringer, M. Fehrer, P. Michler, J. Gutowski, D. Hommel,D. Merbach, and E. SchöllElectroabsorption in Low-Dimensional and Bulk-Like Zn1-xCdxSe8th Int. Conf. on II-VI Compounds, Grenoble (France) 1997J. Crystal Growth 184/185 (1998) 706

C 107 J. Gutowski (invited)Dynamics of Excitonic Transitions and Lasing in II-VI HeterostructuresSem. Inst. of Experimental Physics, Johannes-Kepler-Univ. Linz (Austria)June 9, 1997

C 108* B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, J. Nürnberger, and W. FaschingerCoherent Dynamics of Excitons and Biexcitons: Polarisation and Intensity Dependence5th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Graal Müritz (Germany) 1997Phys. Stat. Sol. (b) 206 (1998) 363

C 109* P. Michler, U. Neukirch, K. Wundke, J. Gutowski, M. Behringer, D. Hommel, H. Güldner, and K. HennebergerDynamics of Gain and Stimulated Emission in II-VI Laser Diodes5th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Graal Müritz (Germany) 1997Phys. Stat. Sol. (b) 206 (1998) 399

C 110* S. Strauf, P. Michler, J. Gutowski, S. Einfeldt, and D. HommelExcitonic Transitions in MBE Grown h-GaN with Cubic Inclusions2nd Int. Conf. on Nitride Semiconductors, Tokushima (Japan) 1997Proceedings and J. Crystal Growth 189/190 (1998) 556

C 111* G. Manzke, Q.Y. Peng, K. Henneberger, K. Hauke, U. Neukirch, and J. GutowskiExcitonic Saturation in ZnSe at Low Temperatures: Blue versus Red ShiftCLEO/IQEC (Intern. Conf. Quantum Electronics), San Francisco 1998, OSA Technical Digest Series 98 - 84666 (1998) QTuG15, p. 64

C 112* T. Lilienkamp, P. Michler, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. HommelElectro-optical Properties of II-VI Heterostructures in the Blue-Green Spectral RegionCLEO-Europe/IQEC, Glasgow (U.K.) 1998 EQEC Technical Digest, IEEEC ct. No. 98 TH8326, QThD3, p. 179

C 113 B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, V.M. Axt, J. Nürnberger, and W. FaschingerCoherent Dynamics of the Fundamental and Excited Biexciton States in ZnSe-Based Heterostructures 17th General Conf. of the Condensed Matter Division of the EPS, Grenoble (France) 1998, CMD Volume 22 E, Ed. J. Dumas, EPS, Abstract Nr. 33.06

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C 114* O. Homburg, P. Michler, H. Wenisch, M. Behringer, J. Gutowski, and D. HommelGain Mechanisms in ZnSe Based Separate-Confinement-Heterostructure Lasers with Binary WellsProc. 24th Int. Conf. on the Physics of Semiconductors, Jerusalem (Israel) 1998,Ed. D. Gershoni, World Scientific (Singapore) 1999, Paper IX B 36

C 115* U. Neukirch, G. Bley, J. Gutowski, H. Wenisch, and D. HommelIn-Plane Transport of Excitonic Polaritons in HeterostructuresProc. 24th Int. Conf. on the Physics of Semiconductors, Jerusalem (Israel) 1998,Ed. D. Gershoni, World Scientific (Singapore) 1999, Paper IV D 12

C 116* B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, V.M. Axt, J. Nürnberger, and W. FaschingerSpectral Signature of Biexciton Beats in Four-Wave-Mixing ExperimentsProc. 24th Int. Conf. on the Physics of Semiconductors, Jerusalem (Israel) 1998,Ed. D. Gershoni, World Scientific (Singapore) 1999, Paper IV E 3

C 117 J. Gutowski (invited)High-Density Effects and Lasing in II-VI HeterostructuresHokkaido University, Sapporo (Japan), Sept. 28, 1998

C 118* P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. HommelTemperature Dependent Gain Characteristics of ZnSe Based Separate-Confinement-Heterostructure Lasers with Binary Wells2nd Int. Symp. Blue Lasers and Light Emitting Diodes, Kisarazu (Japan) 1998, Proc. Eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Ohmsha Ltd. (Tokyo) 1998, p. 528

C 119* S. Strauf, P. Michler, J. Gutowski, U. Birkle, S. Einfeldt, V. Kirchner,H. Heinke, and D. HommelDonor-Acceptor-Pair Recombination for Impurity Identification and Analysis of Cubic Inclusions in Mg- and C-doped MBE Grown Hexagonal GaN2nd Int. Symp. Blue Lasers and Light Emitting Diodes, Kisarazu (Japan) 1998, Proc. Eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Ohmsha Ltd. (Tokyo) 1998, p. 574

C 120* K. Ohkawa, P. Bäume, M. Fehrer, S. Strauf, J. Gutowski, D. Hommel, and G. LippertCharacteristics of ZnSe:Ga:P Layers Grown by Molecular Beam Epitaxy2nd Int. Symp. Blue Lasers and Light Emitting Diodes, Kisarazu (Japan) 1998, Proc. Eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Ohmsha Ltd. (Tokyo) 1998, p. 86

C 121 M. Vehse, P. Michler, J. Gutowski, M. Klude, H. Wenisch, M. Fehrer, D. Hommel, I. Leiteritz, and H. Selke (invited) Degradation Studies on ZnSe-based Lasers by Optical Measurements2nd Int. Symp. Blue Lasers and Light Emitting Diodes, Kisarazu (Japan) 1998,Rump Session "Degradation"

C 122 O. Homburg, M. Vehse, P. Michler, J. Gutowski, H. Wenisch, and D. Hommel (invited) (Bi) Excitonic Lasing in II-VI Laser Structures2nd Int. Symp. Blue Lasers and Light Emitting Diodes, Kisarazu (Japan) 1998,Rump Session "Lasing"

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C123* K. Suzuki, S. Seto, K. Imai, T. Sawada, U. Neukirch, and J. GutowskiEffect of Compositional Disorder on the Optical Properties of Cd1-xZnxTeU.S.Workshop Physics and Chemistry of II-VI Materials,Charleston (South Carolina, USA) 1998J. Electronic Materials 28 (1999) 785

C 124* U. Birkle, M. Fehrer, V. Kirchner, H. Heinke, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski, F. Bertram, and J. ChristenStudies on Carbon as Alternative p-type Dopant for Gallium NitrideMRS Fall Meeting, Boston (MA, USA) 1998MRS Internet J. Nitride Semiconductor Res. 4S1 (1999) G 5.6

C 125* P. Michler, M.F. Pereira Jr., L. Nerger, O. Homburg, J. Gutowski, H. Wenisch, and D. HommelGain Characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) Quantum-Well LasersPhotonics West, Optoelectronics ´99, San Jose, (CA, USA) SPIE Proc. 3625 (1999) 117

C 126 O. Homburg, R. Heinecke, P. Michler, H. Wenisch, M. Behringer, J. Gutowski, and D. HommelBiexcitonic Gain in ZnSe-based Separate Confinement-Heterostructure LasersInt. Workshop Advances in Growth and Characterization of II-VI Semiconductors, Würzburg 14.-16. April, 1999

C 127 M. Klude, M. Vehse, I. Leiteritz, M. Fehrer, M. Behringer, P. Michler, H. Selke, P. Ryder, J. Gutowski, and D. HommelDegradation Studies in ZnSe-based Laser DiodesInt. Workshop Advances in Growth and Characterization of II-VI Semiconductors, Würzburg 14.-16. April, 1999

C 128* M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, P. Ryder, and S.P. DenBaarsInfluence of Barrier Doping and Barrier Composition on Optical Gain in (In,Ga)N MQWs3rd Int. Conf. on Nitride Semiconductors, Montpellier (France) 1999Phys. Stat. Sol. (b) 216 (1999) 331

C 129* S. Strauf, P. Michler, J. Gutowski, M. Fehrer, U. Birkle, S. Einfeldt, and D. HommelOptical Spectroscopy of Mg- and C-related Donor and Acceptor Levels in GaN Grown by MBE 3rd Int. Conf. on Nitride Semiconductors, Montpellier (France) 1999Phys. Stat. Sol. (b) 216 (1999) 557

C 130* W. Heiss, G. Prechtl, D. Stifter, H. Sitter, G. Springholz, T. Riemann, F. Bertram, D. Rudloff, J. Christen, G. Bley, U. Neukirch, J. Gutowski, and L. TóthExciton Dynamics in ZnCdSe/ZnSe Ridge Quantum Wires9th Int. Conf. on Modulated Semiconductor Structures, Fukuoka (Japan) 1999Physica E 7 (2000) 526

C 131* S. Strauf, P. Michler, J. Gutowski, M. Klude, and D. HommelShallow Donors in Ultrathin Nitrogen-Doped ZnSe Layers – a Novel or a Disregarded Compensation Mechanism in II-VI Device Structures?9th Int. Conf. on II-VI Compounds, Kyoto (Japan) 1999J. Crystal Growth 214/215 (2000) 497

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C 132* O. Homburg, P. Michler, K. Sebald, J. Gutowski, H. Wenisch, and D. HommelThe Trion Spin-Singlet and –Triplet States in ZnSe Single Quantum Wells9th Int. Conf. on II-VI Compounds, Kyoto (Japan) 1999J. Crystal Growth, 214/215 (2000) 832

C 133* B. Haase, U. Neukirch, J. Meinertz, J. Gutowski, V.M. Axt, G. Bartels, A. Stahl, J. Nürnberger, and W. FaschingerIntensity Dependence of Signals Obtained in Four-Wave-Mixing Geometry: Influence of Higher-Order Contributions9th Int. Conf. on II-VI Compounds, Kyoto (Japan) 1999J. Crystal Growth 214/215 (2000) 852

C 134* B. Haase, U. Neukirch, J. Gutowski, J. Nürnberger, W. Faschinger, M. Behringer, D. Hommel, V.M. Axt, G. Bartels, and A. StahlLine Shape of Four-Wave-Mixing Signals: Dependence on Sample Geometry and Excitation Conditions9th Int. Conf. on II-VI Compounds, Kyoto (Japan) 1999J. Crystal Growth 214/215 (2000) 856

C 135* M. Santer, J. Meinertz, J. Gutowski, and M.F. Pereira Jr.Nonlinear Polaritons in II-VI MQW Heterostructures9th Int. Conf. on II-VI Compounds, Kyoto (Japan) 1999J. Crystal Growth 214/215 (2000) 862

C 136 J. Gutowski (invited)Dynamcis and Lasing in Wide-Gap SemiconductorsHeriot-Watt University, Edinburgh (Scotland, U.K.), Nov. 30, 1999

C 137* P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, and V. HärleGain Saturation in (In,Ga)N/GaN/(Al,Ga)N Laser Structures3rd Int. Symposium on Blue Lasers and Light Emitting Diodes, Berlin/Zeuthen (Germany) 2000Phys. Stat. Sol. (a) 180 (2000) 391

C 138* V.M. Axt, G. Bartels, B. Haase, J. Meinertz, U. Neukirch, and J. GutowskiHow Correlated Coulomb Quantum Kinetics Affects the Optical Phase of Four-wave-mixing Signals6th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2000), Marburg (Germany) 2000Phys. Stat. Sol. (b) 221 (2000) 205

C 139 S. Strauf, J. Gutowski, M. Klude, and D. HommelNew Compensation Mechanism in Ultrathin Nitrogen-Doped ZnSe Epitaxial LayersPBULD II-VI Workshop, Trieste (Italy), May 22-24, 2000

C 140 K. Sebald, O. Homburg, P. Michler, J. Gutowski, M. Klude, and D. HommelNegatively Charged Trions in ZnSe Quantum WellsPBULD II-VI Workshop, Trieste (Italy), May 22-24, 2000

C 141 M. Vehse, P. Michler, J. Gutowski, M. Klude, and D. HommelCharacterization of Degradation Processes in ZnSe-Based Laser Diodes – High Current Injection versus Low Current InjectionPBULD II-VI Workshop, Trieste (Italy), May 22-24, 2000

C 142 S. Strauf, S. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. HommelInfluence of Magnesium Doping Level on the Thermal Acceptor Activation Energy in GaN4th European GaN Workshop, Nottingham (U.K.) 2000

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C 143 M. Röwe, P. Michler, J. Gutowski, S. Bader, B. Hahn, and V. HärleCharacterization of the Wave Guiding Properties of (In,Ga)N/GaN/(Al,Ga)N Laser Structures4th European GaN Workshop, Nottingham (U.K.) 2000

C 144 M. Vehse, O. Lange, P. Michler, J. Gutowski, S. Bader, B. Hahn, H.J. Lugauer, and V. HärleGain and Saturation Behaviour of GaN Based Laser Structures4th European GaN Workshop, Nottingham (U.K.) 2000

C 145* R. Heinecke, U. Neukirch. P. Michler, and J. GutowskiFine Structure of the Amplified Spontaneous Emission of ZnSe Laser StructuresProceedings of the 25th Int. Conference on the Physics of Semiconductors, Osaka (Japan) 2000, Eds. N. Miura and T. Ando, Springer (Berlin) 2001, 585

C 146* J. Meinertz, I. Gösling, U. Neukirch, and J. GutowskiBiexcitonic Signatures in Femtosecond Pulse PropagationProceedings of the 25th Int. Conference on the Physics of Semiconductors, Osaka (Japan) 2000, Eds. N. Miura and T. Ando, Springer (Berlin) 2001, 587

C 147* J. Gutowski, P. Bäume, M. Behringer, and D. HommelDetermination of Compensation Ratios and Concentration of Compensating Impurities in SemiconductorsProceedings of the 25th Int. Conference on the Physics of Semiconductors, Osaka (Japan) 2000, Eds. N. Miura and T. Ando, Springer (Berlin) 2001, 1405

C 148* K. Sebald, O. Homburg, P. Michler, J. Gutowski, M. Klude, H. Wenisch, and D. HommelMagnetooptics of Trions in ZnSe/(Zn,Mg)(S,Se) Single Quantum WellsProceedings of the 25th Int. Conference on the Physics of Semiconductors, Osaka (Japan) 2000, Eds. N. Miura and T. Ando, Springer (Berlin) 2001, 1523

C 149* S. Strauf, S. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. HommelTemperature Dependence of Magnesium Related Optical Transitions in GaN:MgInternational Workshop on Nitride Semiconductors, Nagoya (Japan) 2000,Proceedings IPAP (Institute of Pure and Applied Physics), Conf. Series 1 (2000) 721 Tokyo, Japan

C 150 J. Gutowski , K. Sebald, O. Homburg, P. Michler, M. Klude, H. Wenisch, and D. Hommel (invited) Magnetooptics of Trions in ZnSe/ZnMgSSe Single Quantum WellsMini Workshop on Trion Physics, Berlin (Germany) 2001

C 151 S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson, and J. J. DaviesOvercharged Donor Center in Ultrathin ZnSe:N LayersMini Workshop on Trion Physics, Berlin (Germany) 2001

C 152 J. J. Davies, D. Wolverson, S. Strauf, J. Gutowski, and D. HommelDisplaced Substitutional Acceptors in Semiconductors of Zincblende StructureMeeting on Defects in Wide Gap Semiconductors, Exeter (U.K.) 2001

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C 153* M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar,A. Lell, and V. HärleInfluence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures4th Int. Conf. on Nitride Semiconductors, Denver (Colorado, USA) 2001 Phys. Stat. Sol. (a) 188 (2001) 65

C 154* M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. HärleCorrelation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures4th Int. Conf. on Nitride Semiconductors, Denver (Colorado, USA) 2001Phys. Stat. Sol. (a) 188 (2001) 109

C 155* S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt, and D. HommelAnalysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN:Mg4th Int. Conf. on Nitride Semiconductors, Denver (Colorado, USA) 2001 Phys. Stat. Sol. (b) 228 (2001) 379

C 156* S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson,and J. J. DaviesNegatively Charged Donor Centers in Ultrathin ZnSe:N Layers10th Int. Conf. on II-VI Compounds, Bremen (Germany) 2001, Phys. Stat. Sol. (b) 229 (2002) 245

C 157* D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, K. Ohkawa, E. Tournieé, and J.-P. FaurieDisplaced Substitutional Phosphorus Acceptors in Zinc Selenide10th Int. Conf. on II-VI Compounds, Bremen (Germany) 2001, Phys. Stat. Sol. (b) 229 (2002) 257

C 158* H. G. Breunig, T. Trüper. I. Rückmann, J. Gutowski, and F. JahnkeInterferometric Four-Wave-Mixing Experiments on ZnSe Quantum-Well Structures10th Int. Conf. on II-VI Compounds, Bremen (Germany) 2001, Phys. Stat. Sol. (b) 229 (2002) 621

C 159* J. Gutowski, K. Sebald, C. Roder, M. Klude, H. Wenisch, and D. HommelInterplay of the Trion Singlet and Triplet State Transitions in Magnetooptical and Time-Resolved Investigation of ZnSe/Zn(S,Se) Single Quantum Wells10th Int. Conf. on II-VI Compounds, Bremen (Germany) 2001, Phys. Stat. Sol. (b) 229 (2002) 653

C 160* H. G. Breunig, T. Trüper, I. Rückmann, J. Gutowski, and F. JahnkeEvidence of Density-Dependent Dephasing in Interferometric Four-Wave-Mixing Experiments on Heavy-Hole Excitons in ZnSe Quantum Wells12th Int. Conf. on Nonequilibrium Carrier Dynamics in SemiconductorsSanta Fe, (New Mexico, USA) 2001 Physica B 314 (2002) 283

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C 161* K. Sebald, P. Michler, J. Gutowski, R. Kröger, T. Passow, M. Klude, and D. HommelOptical Gain of CdSe Quantum Dot Stacks7th Int. Conf. on Optics and Excitons in Confined Systems, Montpellier (France) 2001 Phys. Stat. Sol. (a) 190 (2002) 593

C 162 M. Vehse, P. Michler, O. Lange, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Bruederl, and V. Haerle (invited)Properties of Optical Gain and Saturation in (Al,Ga)N/GaN(In,Ga)N Quantum-Well LasersFrontier-Science Research Conference on 'Science and Technology of Nitride Materials – 2001', La Jolla (CA, USA) 2001

C 163* T. Passow, M. Klude, C. Kruse, K. Leonardi, R. Kröger, G. Alexe, K. Sebald, S. Ulrich, P. Michler, J. Gutowski, H. Heinke, and D. Hommel (invited)On the Way to the II-VI Quantum Dot VCSELSpring Meeting of the German Physical Society, Regensburg (Germany) 2002Advances in Solid State Physics 42 (2002) 13

C 164* M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, S. Miller, A. Weimar, A. Lell, and V. HärleInfluence of the Layer Design on the Far Field Pattern in GaN Based Laser StructuresInt. Workshop on Nitride Semiconductors, Aachen (Germany) 2002 Phys. Stat. Sol. (a) 194 (2002) 414

C 165* M. Vehse, J. Meinertz, O. Lange, P. Michler, J. Gutowski, S. Bader, A. Lell, and V. HärleAnalysis of Gain Saturation Behavior in GaN Based Quantum Well LasersInt. Workshop on Nitride Semiconductors, Aachen (Germany) 2002 Phys. Stat. Sol. (c) 0 (2002) 43

C 166* H. G. Breunig, T. Voss, I. Rückmann, and J. GutowskiBiexcitonic Effects in Coherently Controlled Six-Wave-Mixing Experiments13th Int. Conference on Ultrafast Phenomena, Vancouver (Canada) 2002Springer Series in Chemical Physics,R.D. Miller et al. (eds), “Ultrafast Phenomena VIII”, Springer (Berlin) 2003 p. 374

C 167* T. Voss, H.G. Breunig, I. Rückmann, J. Gutowski, V.M. Axt, and T. KuhnSignatures of High-Order Coulomb Correlations in Coherently Controlled Four- and Six-Wave-Mixing Experiments on a ZnSe Quantum Well26th Int. Conference on the Physics of Semiconductors, Edinburgh (U.K.) 2002, Eds. A.R. Long and J. H. Davies, IOP Conf. Series 171 (2003) H92

C 168* H.G. Breunig, T. Voss, I. Rückmann, and J. GutowskiCoherent Control of Biexcitonic Polarization in a ZnSe Quantum Well26th Int. Conference on the Physics of Semiconductors, Edinburgh (U.K.) 2002, Eds. A.R. Long and J. H. Davies, IOP Conf. Series 171 (2003) H93

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C 169* C. Kruse, G. Alexe, R. Kröger, M. Klude, H. Heinke, S. M. Ulrich, P. Michler, J. Gutowski, and D. HommelInvestigation of Green Emitting Monolithic II-VI Vertical Cavity Surface-Emitting LaserMRS Spring Meeting 2002, San Francisco (USA)Mat. Res. Soc. Proc. 722 (2002) 141

C 170* T. Voss, H.G. Breunig, I. Rückmann, and J. GutowskiSimultaneous Optical Coherent Control of Excitonic and Biexcitonic Polarization in a ZnSe Quantum Well6th Int. Workshop Nonlinear Optics and Excitation Kinetics-Semiconductors, Karlsruhe 2003, Phys. Stat. Sol. (c) 0 (2003) 1497

C 171* H.G. Breunig, T. Voss, I. Rückmann, and J. GutowskiPolarization Dependence of Excitonic and Biexcitonic Contributions to FWM Signals6th Int. Workshop Nonlinear Optics and Excitation Kinetics-Semiconductors, Karlsruhe 2003, Phys. Stat. Sol. (c) 0 (2003) 1445

C 172* M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell, V. HärleInfluence of the Carrier Density on the Optical Gain and Refractive Index Change in InGaN Laser Structures5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003Phys. Stat. Sol. (a) 200 (2003) 135

C 173* E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, and J. GutowskiInfluence of the Growth Kinetics on the Indium Distribution during MOVPE Growth of InGaN Quantum Wells,5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003Phys. Stat. Sol. (c) 0 (2003) 2171

C 174* J. Gutowski (invited)11th Int. Conference on II-VI Compounds (II-VI 2003), Niagara Falls, USA, 22-26 September, 2003Conference ReportPhys. Stat. Sol. (b) 240 (2003) 269

C 175 J. Gutowski (invited)Semiconductor Lasers for the Green to UV Spectral Range & Research Topics at University of Bremen in Science and Engineering,State University of New York at Stony Brook, N. Y. (USA), Sept. 30, 2003

C 176* T. Voss, H.G. Breunig, I. Rückmann, and J. GutowskiReal-Time Observation of the Coherent Control of Linear and Four-Wave-Mixing Polarization of Excitons in a ZnSe Single Quantum Well13th Int. Conf. Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 13), Modena (Italy) 2003, Semicond. Sci. Technol. 19 (2004) 128

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C 177* H.G. Breunig, T. Voss, I. Kudyk, I. Rückmann, and J. GutowskiDephasing of Excitonic and Biexcitonic Polarization in a ZnSe Single-Quantum Well11th Int. Conf. II-VI Compounds, Niagara Falls (USA) 2003Phys. Stat. Sol. (c) 1 (2004) 843

C 178 S.M. Ulrich, P. Michler, J. Gutowski, C. Kruse, and D. HommelOptically Pumped Lasing of Monolithic II-VI Vertical Cavity Surface Emitting Laser Structures for the Green Spectral Region11th Int. Conf. II-VI Compounds, Niagara Falls (USA) 2003(Results described in publication C 176)

C 179* C. Kruse, S. M. Ulrich, G. Alexe, E. Roventa, R. Kröger, B. Brendemühl, P. Michler, J. Gutowski, and D. Hommel (invited)Green Monolithic II-VI Vertical-Cavity Surface-Emitting Laser Operatingat Room Temperature11th Int. Conf. II-VI Compounds, Niagara Falls (USA) 2003Phys. Stat. Sol. (b) 241 (2004) 731

C 180 J. Gutowski (invited)Semiconductor Light Emitters for the Blue to UV Spectral RangeState University of New York at Stony Brook, (N.Y., USA), June 21, 2004

C 181 J. Gutowski (invited)Semiconductor Lasers and Single-Photon Sources for the Blue to UV Spectral RangeBrown University, Providence (R.I., USA), June 22, 2004

C 182* L. Wischmeier, I. Rückmann, J. Gutowski, M. Buck, S. Schumacher, G. Czycholl, and F. JahnkeEvidence of Higher-Order Nonlinearities on Excitonic FWM Signal in Microscopic Theory and Experiment14th Int. Conf. on Ultrafast Phenomena, Niigata (Japan) 2004Eds. T. Kobayashi et al., Springer Series in Chem. Phys. 79 (2005) 260

C 183* H. Lohmeyer, K. Sebald, J. Gutowski, S. Einfeldt, C. Roder, and D. HommelMicrophotoluminescence of Strongly Localized States in InGaN/GaN Layers –Emission of Quantum DotsInt. Workshop on Nitride Semiconductors, Pittsburgh (USA) 2004Phys. Stat. Sol. (c) 2 (2005) 2744

C 184* T. Voss, L. Wischmeier, H. G. Breunig, I. Rückmann, and J. GutowskiTemperature Dependence of the Dephasing of Excitonic and Biexcitonic Polarization in a ZnSe Single Quantum Well27th Int. Conf. Phys. Semiconductors, Flagstaff (AZ, USA) 2004 Eds. J. Menéndez, C. G. van de Walle, AIP Conf. Proceedings 772 (2005) 1238

C 185* T. Voss, H. G. Breunig, I. Rückmann, J. Gutowski, V. M. Axt, and T. KuhnCoherent Control of the Exciton-Biexciton System Demonstrated in Spectrally and Real-Time Resolved Four-wave-mixing Experiments27th Int. Conf. Phys. Semiconductors, Flagstaff (AZ, USA) 2004 Eds. J. Menéndez, C. G. van de Walle, AIP Conf. Proceedings 772 (2005) 1242

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C 186* C. Kruse, K. Sebald, H. Lohmeyer, B. Brendemühl, R. Kröger, J. Gutowski, and D. HommelRoom-Temperature Operation of a Green Monolithic II-VI Vertical-Cavity Surface-Emitting Laser27th Int. Conf. Phys. Semiconductors, Flagstaff (AZ, USA) 2004 Eds. J. Menéndez, C. G. van de Walle, AIP Conf. Proceedings 772 (2005) 1521

C 187* A. Gust, C. Kruse, M. Klude, E. Roventa, R. Kröger, K. Sebald, H. Lohmeyer, B. Brendemühl, J. Gutowski, and D. Hommel (invited)ZnSe-Based Laser Diodes: New ApproachesE-MRS Fall Meeting, Warsaw (Poland) 2004 Phys. Stat. Sol. (c) 2 (2005) 1098

C 188* K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, and D. HommelMicrophotoluminescence Studies of Excitonic and Multi-Excitonic States of Quantum-Dot-Like Localization Centers in InGaN/GaN StructuresMRS Fall Meeting, Boston (MA, USA) 2004, Mat. Res. Soc. Symp. Proc. Vol. 831 (2005) E5.3.1

C 189* T. Voss and J. Gutowski (invited)Semiconductor Lasers Int. School of Atomic and Molecular Spectroscopy, 22nd Course: New Developments in Optics and Related Fields: Modern Techniques, Materials, and ApplicationsErice (Sicily, Italy) June 6-21, 2005in: Advances in Spectroscopy for Lasers and Sensing, Eds. B. DiBartolo and O. Forte, Springer (Berlin, New York) 2006, p. 365

C 190* I. Kudyk, L. Wischmeier, I. Rückmann, and J. GutowskiOptical Coherent Control of Polariton Modes in ZnSe Single Quantum Wells14th Intern. Conference on Nonequilibrium Carrier Dynamics (HCIS)Chicago (USA) 2005 Eds. M. Saraniti and U. Ravaioli, Springer Proc. in Physics 110 (2006) 33

C 191* K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, S. Einfeldt, and D. HommelComparative Microphotoluminescende Studies of Quantum-Dot-Like Localization Centers in InGaN/GaN Structures Grown by MBE and MOVPE6th Int. Conf. on Nitride Semiconductors, Bremen (Germany) 2005Phys. Stat. Sol. (b) 243 (2006) 1661

C 192* H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. HommelCrack-Free Monolithic Nitride Vertical Cavity Surface-Emitting Laser Structures and Pillar Microcavities6th Int. Conf. on Nitride Semiconductors, Bremen (Germany) 2005Phys. Stat. Sol. (a) 203 (2006) 1749

C 193* T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski (invited)Coherent Control of Excitonic Excitations in II-VI Quantum Wells12th Int. Conf. on II-VI Compounds, Warsaw (Poland) 2005Phys. Stat. Sol. (b) 243 (2006) 813

C 194* I. Kudyk, L. Wischmeier, T. Voss, I. Rückmann, and J. GutowskiCoherent Control of Polariton Modes in Pulse-Transmission and Four-Wave Mixing-Experiments, 12th Int. Conf. on II-VI Compounds, Warsaw (Poland) 2005Phys. Stat. Sol. (c) 3 (2006) 1135

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C 195* H. Lohmeyer, K. Sebald, J. Gutowski, J. Wiersig, F. Jahnke, C. Kruse, and D. HommelConfined Optical Modes in Monolithic ZnSe-Based Pillar Microcavities12th Int. Conf. on II-VI Compounds, Warsaw (Poland) 2005Phys. Stat. Sol. (b) 243 (2006) 844

C 196* A. Gust, C. Kruse, D. Hommel, H. Lohmeyer, K. Sebald, and J. GutowskiGrowth and Characterization of Self-Assembled CdSe Quantum Dots in MgS Barriers12th Int. Conf. on II-VI Compounds, Warsaw (Poland) 2005Phys. Stat. Sol. (c) 3 (2006) 767

C 197 C. Kruse, K. Otte, J. Dennemarck, C. Roder, D. Hommel, H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, A. Rosenauer, J. Wiersig, and F. Jahnke VCSELs and Microcavities Based on Selenides and NitridesWorkshop Kazimierz Dolny, ASPECT Center of Excellence, Inst. of Physics, Warsaw (Poland) Sept. 29 – Oct 3, 2005

C 198 T. Aschenbrenner, S. Figge, K. Sebald, J. Gutowski, and D. HommelMicrophotoluminescence Investigations of InGaN Quantum-Well Structures Processed by Focussed Ion BeamWorkshop Kazimierz Dolny, ASPECT Center of Excellence, Inst. of Physics, Warsaw (Poland) Sept. 29 – Oct 3, 2005

C 199* K. Sebald, J. Gutowski, N. Thillosen, S. Montenari, R. Meijers, R. Calarco, N. Kaluza, H. Hardtdegen, and H. LüthMicrophotoluminescence Studies on Single GaN NanocolumnsMRS Fall Meeting, Boston (MA, USA) 2005, Mat. Res. Soc. Symp. Proc. 892 (2006) FF31-04.1

C 200 R. Kröger, C. Kruse, H. Lohmeyer, J. Gutowski, D. Hommel, and A. RosenauerInterfaces and Defects in Nitride Based Distributed Bragg Reflectors for Vertical Cavity Surface Emitting Lasers Using AlN/GaN SuperlatticesMRS Fall Meeting, Boston (MA, USA) 2005

C 201* S. Schumacher, G. Czycholl, F. Jahnke, I. Kudyk, H.I. Rückmann, J. Gutowski, A. Gust, G. Alexe, and D. HommelPolariton Propagation in Shallow-Confinement Heterostructures2005 Quantum Electronics and Laser Science Conf. (QELS 2005) IEEE Conf. Proc. QELS 3 (2005) 1448

C 202* K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. HommelComparative Investigation of Quantum-Dot-Like Localization Centers in InGaN Quantum Well and Quantum Dot StructuresMRS Fall Meeting, Boston (MA, USA) 2005, Mat. Res. Soc. Symp. Proc. 892 (2006) FF25-02.1

C 203* T. Yamaguchi, S. Figge, K. Sebald, A. Pretorius, A. Rosenauer, J. Gutowski, and D. HommelEpitaxial Growth of InGaN Quantum Dots Grown by MOVPE and RF-MBE and the Structural and Optical PropertiesMRS Fall Meeting, Boston (MA, USA) 2005, Mat. Res. Soc. Symp. Proc. 892 (2006) FF 11-01.1

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C 204* I. Kudyk, I. Rückmann, L. Wischmeier, T. Voss, and J. GutowskiCoherently Controlled Polaritonic Four-Wave-Mixing Polarization in a ZnSe/ZnSSe Heterostructure 7th Int. Workshop on Nonlinear Optics and Excitation Kinetics in SemiconductorsMünster (Germany) 2006, Phys. Stat. Sol. (c) 3 (2006) 2449

C 205* T. Voss, I. Rückmann, J. Gutowski, V. Axt, T. KuhnCoherent Control of Exciton-Biexciton Beats: Direction Selectivity of Four-Wave-Mixing Signals in Experiment and Theory7th Int. Workshop on Nonlinear Optics and Excitation Kinetics in SemiconductorsMünster (Germany) 2006, Phys. Stat. Sol. (b) 243 (2006) 2410

C 206* T. Yamaguchi, K. Sebald, J. Gutowski, S. Figge, and D. HommelNovel Approach to Grow InGaN Quantum Dots4th Int. Conf. on Quantum Dots, Chamonix (France) 2006, Phys. Stat. Sol. (c) 3 (2006) 3955

C 207* K. Sebald, H. Lohmeyer, J. Gutowski, R. Kröger, T. Yamaguchi, and D. HommelOptical Properties of Single InGaN Quantum Dots up to 150 K4th Int. Conf. on Quantum Dots, Chamonix (France) 2006, Phys. Stat. Sol. (c) 3 (2006) 3864

C 208* H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. GutowskiCdSe/ZnSe Quantum Dots Coupled to Modes of Monolithic II-VI Pillar Microcavities: Tunability and Purcell Effect 4th Int. Conf. on Quantum Dots, Chamonix (France) 2006, Phys. Stat. Sol. (c) 3 (2006) 3680

C 209 S. Gangopadhay, Th. Schmidt, T. Yamaguchi, S. Einfeldt, K. Sebald, J. Gutowski, D. Hommel, and S. FaltaMOVPE-Grown Self Organized InGaN Nano-Islands on GaN (0001)/Sapphire TemplatesE-MRS Spring Meeting 2006, Nice (France)

C 210* C. Bekeny, T. Voss, J. Gutowski, B. Postels, M. Kreye, and A. WaagOptical Properties of ZnO Nanorods Realized by Aqueous Chemical GrowthE-MRS Spring Meeting 2006, Nice (France)Superlattices and Microstructures 42 (2007) 398

C 211* L. Wischmeier, T. Voss, I. Rückmann, and J. GutowskiPhotoluminescence Dynamics of Surface-Related Emission in VPE Grown ZnO Nanowires28th Int. Conf. on the Physics of Semiconductors, Vienna (Austria) 2006, Eds. W. Jantsch and F. Schäffler, AIP Conf. Proc. 893 (2007) 277

C 212* C. Bekeny, L. Wischmeier, T. Voss, J. Gutowski, B. Postels, M. Kreye, and A. WaagOptical Characterization of Low-Temperature Grown ZnO Nanorods 28th Int. Conf. on the Physics of Semiconductors, Vienna (Austria) 2006, Eds. W. Jantsch and F. Schäffler, AIP Conf. Proc. 893 (2007) 289

C 213* H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. GutowskiEnhanced Spontaneous Emission of CdSe/ZnSe Quantum Dots in Monolithic II-VI Pillar Microcavities28th Int. Conf. on the Physics of Semiconductors, Vienna (Austria) 2006, Eds. W. Jantsch and F. Schäffler, AIP Conf. Proc. 893 (2007) 1147

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C 214 C. Kruse, A. Gust, H. Lohmeyer, K. Sebald, J. Gutowski, J. Wiersig, N. Baer,F. Jahnke, and D. HommelTowards a Quantum Dot Based Single Photon Emitter Operatingat Room Temperature28th Int. Conf. on the Physics of Semiconductors, Vienna (Austria) 2006

C 215 A. Gust, C. Kruse, H. Lohmeyer, K. Sebald, J. Gutowski, D. Hommel, R. Arians, T. Kümmell, and G. BacherCdSe Quantum Dots in MgS Barriers for Use in a Single-Photon Emitter Operating at Room Temperature14th Intern. Conf. on MBE, Tokyo (Japan) 2006

C 216* K. Sebald, H. Lohmeyer, J. Gutowski, Y. Yamaguchi, C. Kruse, and D. HommelOn the Way to InGaN Quantum Dots Embedded into Monolithic Nitride Cavities Int. Workshop on Nitride Semiconductors, Kyoto (Japan) 2006Phys. Stat. Sol. (b) 244 (2007) 1806

C 217* T. Yamaguchi, J. Dennemarck, C. Tessarek, K. Sebald, S. Gangopadhyay, J. Falta, J. Gutowski, S. Figge, and D. HommelTwo-Step Growth of InGaN QDs and Applications to Light Emitters Int. Workshop on Nitride Semiconductors, Kyoto (Japan) 2006Phys. Stat. Sol. (c) 4 (2007) 2407

C 218 D. Hommel, C. Kruse, A. Gust, T. Yamaguchi, S. Figge, K. Otte, H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, A. Pretorius, A. Rosenauer, J. Wiersig, N. Bär,and F. JahnkeCdSe Quantum Dots and their Application in Surface Emitters and Micropillars:A Comparison to Analogous Nitride StructuresAbstract published in On-Line Journal of E-MRS Fall Meeting 2006, Warsaw (Poland), Symposium F

C 219* R. I. Barabash, G. E. Ice, W. Liu, R. Kröger, H. Lohmeyer, K. Sebald, J. Gutowski, T. Böttcher, and D. HommelFocused-Ion Beam Induced Lattice Damage in Structured InGaN/GaN Layers on Sapphire SubstrateMRS Fall Meeting, Boston (MA, USA) 2006

C 220 C. Kruse, H. Lohmeyer, K. Sebald, R. Kröger, J. Gutowski, and D. Hommel,Growth and Characterization of Fully Strained Monolithic Nitride-Based Vertical-Cavity Surface-Emitting Laser StructuresMRS Fall Meeting, Boston (MA, USA) 2006

C 221 K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, C. Kruse, and D. HommelProgress and Perspectives for InGaN Quantum Dots and Monolithic Nitride CavitiesMRS Fall Meeting, Boston (MA, USA) 2006

C 222 H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. GutowskiPurcell Effect for CdSe Quantum Dots Embedded in High-Q Monolithic II-VI Pillar MicrocavitiesMRS Fall Meeting, Boston (MA, USA) 2006

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C 223 T. Voss, L. Wischmeier, I. Rückmann, J. Gutowski, S. Börner, W. Schade, A. C. Mofor, A. Bakin, and A. WaagCarrier Dynamics of Surface-Related States in ZnO NanorodsMRS Fall Meeting, Boston (MA, USA) 2006

C 224* K. Sebald, H. Lohmeyer, J. Gutowski, C. Kruse, R. Kröger, T. Yamaguchi, A. Gust, D. Hommel, J. Wiersig, and F. Jahnke (invited)Wide-Bandgap Quantum Dot Based Microcavity VCSEL StructuresSpring Meeting of the German Physical Society, Regensburg 2007Adv. in Solid State Physics 47 (2008) 29

C 225 R. I. Barabash, G. E. Ice, W. Liu, R. Kroeger, H. Lohmeyer, K. Sebald, J. Gutowski, T. Boettcher, and D. HommelSpatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN LayersMRS Spring Meeting 2007

C 226 H. Lohmeyer, K. Sebald, J. Gutowski, S. Figge, T. Aschenbrenner, H. Dartsch, C. Kruse, and D. HommelResonant Modes in GaN-Based Small-Volume Micropillars7th Int. Conf. Nitride Semiconductors, Las Vegas (USA) 2007

C 227* K. Sebald, J. Kalden, S. Herlufsen, H. Lohmeyer, J. Gutowski, T. Yamaguchi, C. Tessarek, and D. HommelOptical Properties of Single and Multi-Layer InGaN Quantum Dots7th Int. Conf. Nitride Semiconductors, Las Vegas (USA) 2007Phys. Stat. Sol. (c) 5 (2008) 1883

C 228* C. Kruse, S. Figge, H. Dartsch, C. Tessarek, D. Hommel, H. Lohmeyer, J. Kalden, K. Sebald, and J. GutowskiIntegration of InGaN Quantum Dots into Nitride-Based Microcavities 7th Int. Conf. Nitride Semiconductors, Las Vegas (USA) 2007,Phys. Stat. Sol. (c) 5 (2008) 2320

C 229* K. Sebald, H. Lohmeyer, C. Kruse, J. Wiersig, F. Jahnke, D. Hommel, and J. Gutowski (invited)Properties and Prospects of ZnSe-Based Quantum Dot Microcavity VCSEL Structures 13th Int. Conf. on II-VI Compounds, Jeju (Korea) 2007, J. Korean Phys. Soc. 53 (2008) 83

C 230* C. Bekeny, T. Voss, B. Hilker, J. Gutowski, R. Hauschild, H. Kalt, B. Postels, A. Bakin, and A. WaagMicroscopic Origin of the Near-Band-Edge Emission in Aqueous Chemically Grown ZnO Nanorods13th Int. Conf. on II-VI Compounds, Jeju (Korea) 2007 J. Korean Phys. Soc. 53 (2008) 2867

C 231* J. P. Richters, T. Voss, L. Wischmeier, I. Rückmann, and J. GutowskiNear Band-Edge Photoluminescence Spectroscopy of ZnO Nanowires Embedded in Polymers13th Int. Conf. on II-VI Compounds, Jeju (Korea) 2007 J. Korean Phys. Soc. 53 (2008) 2844

C 232 H. Lohmeyer, K. Sebald, J. Gutowski, C. Kruse, D. Hommel, J. Wiersig, and F. JahnkeStimulated Emission from Monolithic ZnSe-Based Pillar Microcavities13th Int. Conf. on II-VI Compounds, Jeju (Korea) 2007

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C 233 C. Kruse, K. Sebald, H. Lohmeyer, J. Gutowski, and D. HommelEmission Properties of CdSe Quantum Dots with Enhanced Barriers in Monolithic Microcavities at Room Temperature13th Int. Conf. on II-VI Compounds, Jeju (Korea) 2007

C 234* C. Bekeny, T. Voss, J. Gutowski, R. Tena-Zaera, J. Elias, C. Lévy-Clément, I. Mora-Séro, and J. BisquertCorrelating the Optical and Electrical Properties of Electrodeposited ZnO NanowiresMRS Fall Meeting, Boston (MA, USA) 2007

C 235 J.P. Richters, T. Voss, L. Wischmeier, I. Rückmann, and J. GutowskiPhotoluminescence Spectroscopy of ZnO Nanowires Embedded in PolymersSPIE Photonics West, San Jose (CA, USA), 19.-24. Jan. 2008

C 236 C. Kruse, A. Gust, K. Sebald, H. Lohmeyer, J. Kalden, T. Meeser, J. Gutowski, J. Wiersig, F. Jahnke, R. Arians, T. Kümmell, G. Bacher, and D. Hommel (invited)Novel II-VI Based Devices: Single Photon Emitter and Surface Emitting LasersE-MRS Spring Meeting, Strasbourg (France) 2008

C 237 R. Tena-Zaera, J. Elias, C. Lévy-Clément, C. Bekeny, T. Voss, J. Gutowski, I. Mora-Séro, J. BisquertElectrodeposition of ZnO Nanowire Arrays: Growth Mechanism and Physical PropertiesE-MRS Spring Meeting, Strasbourg (France) 2008

C 238 D. Hommel, S. Figge, C. Kruse, A. Gust, C. Tessarek, K. Sebald, J. Kalden, T. Meeser, J. Gutowski, R. Arians, T. Kümmell, and G. BacherQuantum Dot Based Light Emitting Devices for Single-Photon-Emission Based on Nitrides and SelenidesInt. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED), Phoenix (AZ, USA) 2008

C 239 K. Sebald, H. Lohmeyer, J. Kalden, T. Meeser, C. Kruse, A. Gust, D. Hommel, and J. GutowskiFine Tuning of CdSe Quantum Dot Based Microcavities5th Int. Conf. Quantum Dots, Gyeongju (Korea) 2008

C 240* K. Sebald, S. Herlufsen, J. Kalden, H. Lohmeyer, T. Yamaguchi, C. Tessarek, S. Figge, D. Hommel, and J. GutowskiInfluence of Piezoelectric Fields on Excitonic Complexes in InGaN Quantum Dots5th Int. Conf. Quantum Dots, Gyeongju (Korea) 2008Phys. Stat. Sol. (c) 6 (2009) 872

C 241* J.-P. Richters, L. Wischmeier, I. Rückmann, J. Gutowski, and T. VossSurface Excitonic Recombination Dynamics in ZnO Nanowires9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2008), Klink, Müritz (Germany)Phys. Stat. Sol. (c) 6 (2009) 560

C 242* J. Kalden, H. Lohmeyer, K. Sebald, T. Meeser, J. Gutowski, C. Kruse, A. Gust, D. Hommel, J. Wiersig, and F. JahnkeEmission Properties of ZnSe-based Pillar Microcavities at Elevated Temperatures9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2008) Klink, Müritz (Germany)Phys. Stat. Sol. (c) 6 (2009) 508

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C 243* T. Voss, I. Kudyk. L. Wischmeier, and J. Gutowski (invited)Nonlinear Optics with ZnO Nanowires9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 2008) Klink, Müritz (Germany)Phys. Stat. Sol. (b) 246 (2009) 311

C 244 J.-P. Richters, T. Voss, and J. GutowskiInfluence of Surface Coating with Insulating and Conductive Polymers on the Optical Properties of Zinc Oxide Nanowires29th International Conference on the Physics of Semiconductors (ICPS 2008) Rio de Janeiro (Brazil), Conference Proceedings, in print

C 245 K. Sebald, J. Kalden, H. Lohmeyer, T. Meeser J. Gutowski, C. Kruse, A. Gust, and D. HommelEmission Properties of High Q CdSe Quantum Dot Based Monolithic Microcavities at Elevated Temperatures29th International Conference on the Physics of Semiconductors (ICPS 2008) Rio de Janeiro (Brazil)

C 246 T. Voss, C. Bekeny, J. Gutowski, R. Tena-Zaera, J. Elias, C. Lévy-Clément, I. Mora-Seró, and J. BisquertTailoring the Donor Density in Electrochemically Deposited ZnO Nanowires29th International Conference on the Physics of Semiconductors (ICPS 2008) Rio de Janeiro (Brazil)

C 247 C. Kruse, A. Gust, K. Otte, D. Hommel, K. Sebald, H. Lohmeyer, J, Kalden, T. Meeser, J. Gutowski, J. Wiersig, F. Jahnke, R. Arians, T. Kümmell, and G. BacherOptimization of Vertical Resonators and Quantum Dots for Novel II-VI-based Surface Emitting Devices29th International Conference on the Physics of Semiconductors (ICPS 2008) Rio de Janeiro (Brazil)

C 248 M. Aßmann, T. Berstemann, J. Wiersig, C. Gies, H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, D. Hommel, F. Jahnke, and M. BayerObservation of Non-Classical Light Emission in Photon Correlation Measurements of Quantum Dot Microcavity Lasers29th International Conference on the Physics of Semiconductors (ICPS 2008) Rio de Janeiro (Brazil)

C 249* J. Kalden, K. Sebald, T. Voss, J. Gutowski, C. Kruse, T. Aschenbrenner, S. Figge, and D. HommelOptical Properties of GaN Nanorods Grown Catalyst-Free on r-Plane Sapphire Int. Workshop on Nitride Semiconductors (IWN 2008) Montreux (Switzerland),Phys. Stat. Sol. (c) 6 (2009) S578

C 250* J. Kalden, K. Sebald, J. Gutowski, C. Tessarek, S. Figge, and D. HommelOptical Properties and Modal Gain of InGaN Quantum Dot StacksInt. Workshop on Nitride Semiconductors (IWN 2008) Montreux (Switzerland), Phys. Stat. Sol. (c) 6 (2009) S590

C 251 C. Kruse, K. Otte, D. Hommel, K. Sebald, H. Lohmeyer, J. Gutowski, J. Wiersig, and F. JahnkeII-VI Based Vertical Cavity Surface-Emitting Laser for the Green Spectral RegionInt. Conf. on Molecular Beam Epitaxy (MBE 2008), Vancouver (Canada)

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C 252 G. Kunert, C. Kruse, T. Aschenbrenner, S. Figge, D. Hommel, K. Sebald, T. Voss, J. Kalden, and J. GutowskiCatalyst-Free Growth of GaN Nanocolumns on r-Plane Sapphire by Molecular Beam EpitaxyWorkshop on MBE, Zakopane (Poland) 2009

C 253 C. Kruse, G. Kunert, T. Aschenbrenner, S. Figge, K. Sebald, J. Kalden, T. Voss, M. Schowalter, J. Gutowski, A. Rosenauer, and D. HommelHighly Ordered Catalyst- and Mask-Free GaN Nanorods on r-Plane SapphirePDI Topical Workshop on MBE-Grown Nitride Nanowires, Berlin (Germany) 2009

C 254 C. Kruse, R. Retzlaff, M. Seyfried, K. Sebald, J. Kalden, J. Gutowski, J. Wiersig, F. Jahnke, and D. HommelThreshold Behaviour of Green Vertical-Cavity Surface-Emitting Lasers Containing Quantum Dots or Quantum Wells14th Int. Conf. on II-VI Compounds, St. Petersburg (Russia) 2009

C 255* K Sebald, M. Seyfried, J. Kalden, J. Gutowski, C. Kruse, A. Gust, and D. HommelMethods to Spectrally Tune CdSe/ZnSSe Quantum-Dot Monolithic Microcavities14th Int. Conf. on II-VI Compounds, St. Petersburg (Russia) 2009Phys. Stat. Sol. (b) 247 (2010) 1539

C 256 J. Kalden, K. Sebald, C. Tessarek, T. Aschenbrenner, A. Gust, C. Kruse, S. Figge, D. Hommel, and J. GutowskiInfluence of Electric Fields on Excitonic Transitions in Wide-Bandgap Semiconductor Quantum Dots11th Int. Conf. on Optics of Excitons in Confined Systems, Madrid (Spain) 2009

C 257 M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, C. Kruse, and D. HommelProspects of CdSe/ZnSSe Quantum Dots Based Monolithic Pillar Microcavities11th Int. Conf. on Optics of Excitons in Confined Systems, Madrid (Spain) 2009

C 258* M. Seyfried, J. Kalden, H. Lohmeyer, K. Sebald, J. Gutowski, C. Kruse, and D. HommelManipulating the Optical Properties of CdSe/ZnSSe Quantum Dot Based Monolithic Pillar Microcavities11th Int. Conf. on Optics of Excitons in Confined Systems, Madrid (Spain) 2009, J. Phys.: Conf. Series 210 (2010) 012006

C 259* J. Kalden, K. Sebald, G. Kunert, T. Aschenbrenner, C. Kruse, D. Hommel, and J. GutowskiInfluence of Doping on Optical Properties of Catalyst- and Mask-Free Grown Gallium Nitride Nanorods8th Int. Conf. on Nitride Semiconductors, Jeju Island (Korea) 2009Phys. Stat. Sol. (c) 7 (2010) 2240

C 260* J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. GutowskiElectroluminescence from Isolated Single Indium Gallium Nitride Quantum Dots up to 150K 8th Int. Conf. on Nitride Semiconductors, Jeju Island (Korea) 2009Phys. Stat. Sol. (a) 207 (2010) 1428

C 261 T. Voss, T. Shih, J. P. Richters, J. Gutowski, and E. MazurUltrafast Exciton Dynamics in ZnO: Excitonic versus Electron-Hole Plasma LasingMRS Fall Meeting, Boston (MA, USA) 2009

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C 262* M. Seyfried, J. Kalden, K. Sebald, A. Gust, C. Kruse, D. Hommel, and J. GutowskiPolarized Light Emission from CdSe/ZnSSe Quantum Dot Monolithic Pillar Microcavities6th Int. Conf. on Quantum Dots, Nottingham (Great Britain) 2010J. Phys. Conf. Series 245 (2010) 012058

C 263 J. Kalden. K. Sebald, C. Tessarek, S. Figge, C. Kruse, D. Hommel, and J. GutowskiElectroluminescence from Isolated Single Indium Gallium Nitride Quantum Dots up to 150 K6th Int. Conf. on Quantum Dots, Nottingham (Great Britain) 2010

C 264* S. Seto, S. Yamada, A. Kitazaki, K. Sebald, I. Rückmann, and J. GutowskiCrystalline Phase in AlQ3 Films Grown by the Hot-Wall Method16th Intern. Conf. on Crystal Growth, Beijing (China) 2010, J. Crystal Growth 318 (2011) 1067

C 265 G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, D. Hommel, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, and K. ThonkeLight-Emitting Diode Based on Catalyst- and Mask-Free Grown GaN NanorodsInt. Conf. on MBE, Berlin (Germany) 2010

C 266* M. Seyfried, K. Sebald, H. Dartsch, C. Tessarek, S. Figge, C. Kruse, D. Hommel, and J. GutowskiOptical Properties of InGaN Quantum Dots in Monolithic Pillar Microcavities30th Int. Conf. Physics of Semiconductors, Seoul (Korea) 2010 AIP Conf. Proceedings 1399 (2011)

C 267* M. Seyfried, J. Kalden, K. Sebald, C. Kruse, A. Gust, C. Tessarek, D. Hommel, M. Florian, F. Jahnke, and J. GutowskiOptical Properties of Wide-Bandgap Monolithic Pillar Microcavities with Different Geometries10th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS), Paderborn (Germany) 2010 Phys. Stat. Sol. (c) 8 (2011) 1246

C 268* A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, and J. GutowskiComposition Mapping in InGaN Quantum Wells and Quantum Dots using High Resolution STEM Imaging17th Int. Microscopy Congress, Rio de Janeiro (Brasil) 2010

C 269* K. Sebald, M. Seyfried, J. Kalden, H. Dartsch, C. Tessarek, T. Aschenbrenner,S. Figge, C. Kruse, D. Hommel, M. Florian, F. Jahnke, and J. Gutowski,Properties of Monolithic InGaN Quantum Dot Pillar MicrocavitiesInt. Workshop in Nitride Semiconductors 2010, Tampa (Florida, USA)Phys. Stat. Sol. (a) 208 (2011) 1573

C 270 T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, and D. HommelHigh-Quality GaN Nanorods: from Catalyst Free Growth to an LEDInt. Workshop in Nitride Semiconductors 2010, Tampa (Florida, USA)

C 271 A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, S. Bley, P. V. Satyam, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, A. Avremescu, K. Engl, St. Lutgen (invited)Quantitative STEM: Composition Mapping in InGaNSpring Meeting of the German Physical Society, Dresden (Germany) 2011see also D 135

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C 272* T. Mehrtens, S. Bley, M. Schowalter, K. Sebald, M. Seyfried, J. Gutowski, S.S.A. Gerstl, P.-P. Choi, D. Raabe, and A. RosenauerA(S)TEM and Atom Probe Tomography Study of InGaN 17th Int. Conference Microscopy of Semiconducting MaterialsJournal of Physics: Conf. Series 326 (2011) 012029

C 273 S. Klembt, C. Kruse, M. Seyfried, K. Sebald, J. Gutowski, and D. HommelII-VI Based Microcavities for the Blue-Violet Spectral RangeEuro-MBE, Alpe d`Huez (France) 2011

C 274 J.-P. Richters, J. Gutowski, and T. VossDiameter Dependence of the Modal Gain of ZnO Nano- and Microwires11th Int. Conf. Physics of Light-Matter Coupling in NanostructuresBerlin (Germany) 2011

C 275 A. Dev, J.-P. Richters, J. Gutowski and T. VossNanowire-Metal Hybrid Structures: the Influence of the Deposition Technique on the Optical Properties11th Int. Conf. Physics of Light-Matter Coupling in NanostructuresBerlin (Germany) 2011

C 276 A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P.-P. Choi, and D. RaabeComposition Mapping in InGaN with Quantitative STEM Z-Contrast Imaging9th Int. Conf. Nitride Semiconductors, Glasgow (Scotland, U.K.) 2011

C 277 S. Figge, H. Dartsch, C. Tessarek, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald. M. Seyfried, J. Kalden, M. Florian, and F. JahnkeEnhancing the Collection Efficiency of InGaN Quantum Dots in Single Photon Emitters9th Int. Conf. Nitride Semiconductors, Glasgow (Scotland, U.K.) 2011

C 278 S. Klembt, C. Kruse, M. Seyfried, K. Sebald, J. Gutowski, and D. HommelBlue Monolithic Vertical-Cavity Surface Emitter Lasing at 444 nm15th Int. Conf. II-VI Compounds, Mayan Riviera/Cancun (Mexico) 2011

C 279 K. Sebald, M. Seyfried, S. Klembt, C. Kruse, D. Hommel, and J. GutowskiInfluence of the Pillar Geometry on the Emission Properties of ZnSe-Based Monolithic Microcavities12th Int. Conf. Optics of Excitons in Confined Systems, Paris (France) 2011

C 280 D. Hou, A. Dev, J. Gutowski, and T. VoßOxygen-Controlled Photoconductivity in Hybrid ZnO-Nanowire/CdSe-Quantum-Dot Devices1st EOS Topical Meeting on Micro- and Nano-Optoelectronic Systems, Bremen, (Germany) 2011

C 281 S. Klembt, M. Seyfried, S. Bley, K. Frank, K. Sebald, J. Gutowski, A. Rosenauer, D. Hommel, and C. KruseBlue Monolithic vertical-Cavity Surface Emitter Lasing at 443 nm31st Int. Conf. Physics of Semiconductors, Zurich (Switzerland) 2012

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C 282 K. Sebald, M. Seyfried, S. Klembt, C. Kruse, D. Hommel, and J. GutowskiStrong Coupling in Blue Light-Emitting ZnSe-Based Monolithic Cavities31st Int. Conf. Physics of Semiconductors, Zurich (Switzerland) 2012

C 283* K. Sebald, M. Seyfried, S. Klembt, C. Kruse, T. Aschenbrenner, D. Hommel, S. Bley, A. Rosenauer, and J. GutowskiBlue Lasing and Strong Coupling in ZnSe Monolithic Microcavities11 Int. Workshop on Nonlinear Optic and Excitation Kinetics in Semiconductors (NOEKS 11) Stuttgart (Germany) 2012Phys. Stat. Sol. (c) 10 (2013) 1230

C 284 S. Bley, D. Hou, S. Resch, S. Waldvogel, J. Gutowski, and T. VossOxygen-Controlled Electron-Transfer Dynamics under Optical Excitation in Hybrid ZnO Nanowire/CdSe Quantum Dot Structures1st German-Korean Joint Symposium on Nano-Optics and Nanotechnology, Delmenhorst (Germany) 2012

C 285 J. Hartmann, X. Wang, J. Ledig, M. S. Mohajerani, M. Mandl, S. Bley, K. Sebald, X. Kong, A. Trampert, M. Straßburg, T. Voss, J. Gutowski, H.H. Wehmann, A. Waag MOVPE Selective Area Growth of Ga-Polar Submicron-GaN-LEDsWorkshop EWMOVPE, Aachen (Germany) 2013

C 286 J. Hartmann, X. Wang, J. Ledig, M. S. Mohajerani, M. Mandl, S. Bley, K. Sebald, X. Kong, A. Trampert, M. Straßburg, T. Voss, J. Gutowski, H.H. Wehmann, A. Waag Analysis of Submicron GaN based Core-Shell LED Structures grown by Selectrive Area MOVPEIntern. Conference on Nitride Semiconductors, Washington (USA) 2013

C 287 R. B. Bergmann, A. Garcia-Ortiz, J. Gutowski, and W. Lang (invited)Nanophotonics and Microelectronics: Heading towards Optical ComputingBIT’s 3rd Annual World Congress of Nanoscience and Nanotechnology (NaNo S&T), Xi’an (China) 2013

C 288* T. Klein, S. Klembt, K. Sebald, S. Figge, A. Gust, C. Kruse, D. Hommel, J. Gutowski, E. Durupt, Le Si Dang, and M. Richard (invited)Fabrication of ZnSe-Based Microcavities for Lasing in the Strong Coupling Regime and Polariton Confinement16th Int. Conf. on II-VI Compounds and Related Materials (II-VI 2013)Nagahama (Japan) 2013Phys. Stat. Sol. (c) 11 (2014) 1267

C 289 T. Voss, S. Bley, J. Gutowski, J. Reinhold, F. Meierhofer, and L. MädlerStructural and Optical Characterization of Hybrid ZnO/Polymer Core-Shell Nanowires Fabricated by Oxidative Chemical Vapor DepositionMRS Fall Meeting 2013, Boston (USA) 2013

C 290 J. Hartmann, X. Wang, S. Bley, F. Krause, J. Ledig, K. Sebald, M. Mandl, X. Kong, A. Trampert, M. Straßburg, T. Voss, J. Gutowski, H.H. Wehmann, and A. WaagTransmission Electron Microscopy and Photoluminescence Analysis of MOVPE-Grown GaN Based Core-Shell LED WiresMRS Fall Meeting 2013, Boston (USA) 2013

C 291 S. Bley, M. Diez, S. Resch, A. D. Müller, S. Waldvogel, J. Gutowski, and T. VossElectronic Coupling and Luminescence Dynamics of Hybrid ZnO-Nanowire/CdSe-Quantum Dot StructuresMRS Fall Meeting 2013, Boston (USA) 2013

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C 292 R. B. Bergmann, A. Garcia-Ortiz, J. Gutowski, and W. Lang (invited)Nanophotonics and Microelectronics: Heading towards Optical ComputingSysInt 2014, Bremen (Germany)

C 293 O. Volciuc, V. Sergentu, T. Braniste, I. Tiginyanu, M.A. Stevens-Kalceff, T. Aschenbrenner, D. Hommel, and J. GutowskiPhotonic Crystal Structures Based on GaN Ultrathin Membranes Fabricated with Maskless Lithography32nd International Conf. on the Physics of Semiconductors, Austin (Texas, USA) 2014

C 294 SK. S. Rahman, M. Cornelius, T. Klein, T. Schönfeld, C. Kruse, D. Hommel, J. Gutowski, and K. SebaldInfluence of Tamm Plasmons on the Optical Properties of ZnSe-Based Microcavities12th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS12), Bremen (Germany) 2014

C 295 S. Bley, M. Diez, J. Gutowski, and T. VossElectronic Coupling and Luminescence Dynamics in Hybrid ZnO-Nanowire/CdSe-Quantum Dot Structures12th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS12), Bremen (Germany) 2014

C 296 K. Sebald, A. Schneider, K. Frank, A. Rosenauer, J. Gutowski, and T. VossInfluence of Intense Ultrashort Laser Pulses on the Surface Morphology of Wide-Bandgap Materials12th Int. Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS12), Bremen (Germany) 2014

C 297 J. Gutowski (invited)GaN-Based MicrocavitiesSino-German Workshop on III-V Materials and Devices on the Nanometer ScalePDI, Berlin (Germany), Oct. 8-10, 2014

C 298 O. Volciuc, T. Braniste, V. Sergentu, I. Tiginyanu, M.A. Stevens-Kalceff, M. Schowalter, A. Rosenauer, and J. Gutowski (invited)Fabrication of Photonic Crystals Based on GaN Ultrathin Membranes by Maskless LithographySino-German Workshop on III-V Materials and Devices on the Nanometer ScalePDI, Berlin (Germany), Oct. 8-10, 2014

C 299* O. Volciuc, T. Braniste, V. Sergentu, V. Ursaki, I. Tiginyanu, and J. GutowskiFabrication of Photonic Crystal Circuits Based on GaN Ultrathin Membranes by Maskless LithographySPIE Microtechnologies, Nanotechnology VIIBarcelona (Spain), May 4-6, 2015Proc. SPIE 9519 (2015) 951904

C 300* SK S. Rahman, M. Cornelius, T. Klein, S. Klembt, C. Kruse, D. Hommel, J. Gutowski, and K. SebaldInteraction of Tamm Plasmons with Cavity Photons and Excitons in ZnSe-Based Microcavities17th Int. Conf. on II-VI Compounds and Related MaterialsParis (France), Sept. 13-18, 2015Phys. Stat. Sol. (c) (2016), in press

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C 301 K. Sebald, SK. S. Rahman, M. Cornelius, J. Gutowski, T. Klein, S. Klembt, D. HommelOptical Properties of II-VI-Based Bragg-Polariton Samples17th Int. Conf. on II-VI Compounds and Related MaterialsParis (France), Sept. 13-18, 2015

C 302* S. Bley, F. Albrecht, S. Resch, S. Waldvogel, A. Menzel, M. Zacharias, T. Voss,and J. GutowskiLuminescence Dynamics of Hybrid ZnO Nanowire/CdSe Quantum Dot Structures17th Int. Conf. on II-VI Compounds and Related MaterialsParis (France), Sept. 13-18, 2015Phys. Stat. Sol. (c) (2016), in press

C 303* S. Bley, M. Rückmann, A. Castro-Carranza, F. Meierhofer, L. Mädler, T. Voss, and J. GutowskiStructural and Optical Characterization of Hybrid ZnO/Polymer Core-Shell Nanowires Fabricated by Oxidative Chemical Vapor Deposition17th Int. Conf. on II-VI Compounds and Related MaterialsParis (France), Sept. 13-18, 2015Phys. Stat. Sol. (c) (2016), in press

C 304 S. Bley, A. Castro-Carranza, E. Tansey, W. Seemann, and J. GutowskiImpact of Polystyrene-Based Passivating Interlayer on Hybrid Polymer/ZnO Nanowire Heterostructures33rd Int. Conf. Physics of Semiconductors,Beijing (China) 2016, submitted

C 305 K. Sebald, SK. S. Rahman, T. Kaya, J. Gutowski, T. Klein, S. Klembt, A. Gust,and D. HommelInfluence oft he Sample Design on the Strong Light-Matter Coupling in ZnSe-Based Periodic Structures33rd Int. Conf. Physics of Semiconductors,Beijing (China) 2016, submitted